TWI541935B - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
TWI541935B
TWI541935B TW104102667A TW104102667A TWI541935B TW I541935 B TWI541935 B TW I541935B TW 104102667 A TW104102667 A TW 104102667A TW 104102667 A TW104102667 A TW 104102667A TW I541935 B TWI541935 B TW I541935B
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TW
Taiwan
Prior art keywords
substrate
central axis
chamber
processing apparatus
support
Prior art date
Application number
TW104102667A
Other languages
Chinese (zh)
Other versions
TW201535585A (en
Inventor
安藤幸嗣
Original Assignee
斯克林集團公司
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Publication date
Priority claimed from JP2014013210A external-priority patent/JP6211424B2/en
Priority claimed from JP2014013209A external-priority patent/JP6208028B2/en
Application filed by 斯克林集團公司 filed Critical 斯克林集團公司
Publication of TW201535585A publication Critical patent/TW201535585A/en
Application granted granted Critical
Publication of TWI541935B publication Critical patent/TWI541935B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Description

基板處理裝置 Substrate processing device

本發明係關於一種基板處理裝置。 The present invention relates to a substrate processing apparatus.

習知,於半導體基板(以下,簡稱為「基板」)之製造步驟中,使用基板處理裝置對基板實施各式各樣之處理。例如,藉由朝表面上形成有阻劑之圖案的基板供給藥液,對基板之表面進行蝕刻等之處理。此外,於蝕刻處理結束後,還進行將基板上之阻劑除去或對基板進行洗淨之處理。 Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as "substrate"), various processes are performed on the substrate using a substrate processing apparatus. For example, the surface of the substrate is subjected to etching or the like by supplying a chemical solution to a substrate on which a resist pattern is formed. Further, after the etching process is completed, a process of removing the resist on the substrate or washing the substrate is also performed.

於對基板逐片地進行處理之單片式之基板處理裝置中,藉由基板保持部保持基板後,一方面使基板保持部旋轉一方面對基板供給處理液。作為於基板保持部上保持基板之方法,實用上已有真空卡盤、機械卡盤、磁性卡盤等之各種手段。例如,美國專利第6,446,643號說明書中揭示一種機構,其於上下之腔室構件配置於相互接近之位置時將基板挾持,於上下之腔室構件分離時解除基板之挾持。此外,日本專利特開2005-19456號公報中揭露一種機構,其藉由使配置於基板之周圍之複數個挾持構件分別轉動,進行基板之挾持或挾持之解除。又,美國專利第6,485,531號說明書(文獻3)中揭露一種方法,於藉由磁性使旋轉頭相對於定子非接觸式地旋轉之裝置中,藉由具有彈簧之把持部將晶圓保持於旋轉頭上。 In the one-piece substrate processing apparatus that processes the substrate one by one, after the substrate is held by the substrate holding portion, the substrate holding portion is rotated to supply the processing liquid to the substrate. As a method of holding the substrate on the substrate holding portion, various means such as a vacuum chuck, a mechanical chuck, and a magnetic chuck have been practically used. For example, U.S. Patent No. 6,446,643 discloses a mechanism for holding a substrate when the upper and lower chamber members are disposed at positions close to each other, and releasing the holding of the substrate when the upper and lower chamber members are separated. In addition, Japanese Laid-Open Patent Publication No. 2005-19456 discloses a mechanism for releasing a holding or holding of a substrate by rotating a plurality of holding members disposed around a substrate. Further, in the specification of the U.S. Patent No. 6,485,531 (Document 3), a method is disclosed in which a wafer is held on a rotating head by a holding portion having a spring by means of magnetically rotating the rotary head in a non-contact manner with respect to the stator. .

然而,於像文獻3之裝置那樣使基板保持部以懸浮狀 態進行旋轉之情況下,為了保持基板,對基板保持部傳遞藉由電氣或壓縮空氣等之動力源而產生之驅動力,惟該傳遞有困難。文獻3之裝置中,藉由具有彈簧之把持部保持晶圓,但需要有於處理腔室之外側將晶圓固定於旋轉頭上,然後將裝設了晶圓之旋轉頭導入處理腔室內之繁瑣之作業。此外,於基板處理裝置中,為了使基板穩定地旋轉,重點在於使基板相對於旋轉中心進行對位,但於藉由外部之搬送機構將基板搬入基板處理裝置內時,要使基板相對於旋轉中心精度良好地進行對位,並非易事。因此,需要能有一種新穎之方法,可使基板相對於旋轉中心一方面進行對位一方面進行保持。 However, the substrate holding portion is suspended in a device like the one in Document 3. When the state is rotated, in order to hold the substrate, the driving force generated by the power source such as electric or compressed air is transmitted to the substrate holding portion, but the transfer is difficult. In the device of Document 3, the wafer is held by the holding portion having the spring, but it is necessary to fix the wafer on the rotating head on the outer side of the processing chamber, and then the cumbersome introduction of the rotating head with the wafer into the processing chamber is cumbersome. Homework. Further, in the substrate processing apparatus, in order to stably rotate the substrate, the focus is on aligning the substrate with respect to the center of rotation. However, when the substrate is carried into the substrate processing apparatus by an external transfer mechanism, the substrate is rotated relative to the substrate. It is not easy for the center to perform the alignment accurately. Therefore, there is a need for a novel method for maintaining the alignment of the substrate on the one hand with respect to the center of rotation.

本發明係應用於處理基板之基板處理裝置,其目的在於使基板相對於旋轉中心一方面進行對位一方面進行保持。 The present invention is applied to a substrate processing apparatus for processing a substrate, and an object thereof is to hold a substrate on the one hand with respect to a center of rotation.

與本發明相關之一種基板處理裝置,其具備有:基板支撐部,其在將基板之一側之主表面即上表面朝向上側之狀態下自下側支撐上述基板;旋轉機構,其使上述基板支撐部以垂直於上述基板之中心軸為中心進行旋轉;上表面對向部,其對向於上述上表面之至少外緣部;對向部支撐機構,其以選擇之方式將上述上表面對向部配置在相對於上述基板支撐部而於上方產生分離之分離位置、及與上述基板支撐部產生連結之連結位置;及卡盤部,其設置在上述基板支撐部或者上述上表面對向部之一側,上述卡盤部係具備有:至少3個爪部,其等在沿著上述中心軸而進行觀察之情況下,配置在上述基板之周圍;及傳遞機構,其包含有於上述上表面對向部位在上述連結位置之時藉由上述基板支撐部或者上述上表面對向部之另一側而被壓入之抵接部,藉由將作用於上述抵接部之力加 以傳遞至上述至少3個爪部,使上述至少3個爪部以朝向上述中心軸之方式按壓上述基板之邊緣。於該基板處理裝置中,可使基板相對於旋轉中心一方面進行對位一方面進行保持。 A substrate processing apparatus according to the present invention includes: a substrate supporting portion that supports the substrate from a lower side in a state in which an upper surface of a main surface on one side of the substrate faces upward; and a rotating mechanism that causes the substrate The support portion rotates about a central axis perpendicular to the substrate; the upper surface facing portion faces at least an outer edge portion of the upper surface; and the opposite portion supporting mechanism selectively pairs the upper surface a separation position at which separation occurs above the substrate support portion and a connection position at which the substrate support portion is coupled to the substrate, and a chuck portion provided on the substrate support portion or the upper surface facing portion In one side, the chuck portion includes at least three claw portions that are disposed around the substrate when viewed along the central axis, and a transmission mechanism including the above When the surface opposing portion is at the above-mentioned connecting position, the abutting portion pressed by the substrate supporting portion or the other side of the upper surface opposing portion is acted upon by The force of the abutment The at least three claw portions are transmitted to the at least three claw portions, and the at least three claw portions are pressed against the edge of the substrate so as to face the central axis. In the substrate processing apparatus, the substrate can be held on the one hand with respect to the center of rotation.

較佳為,上述傳遞機構係包括有彈性構件,在被上述基板支撐部所支撐之基板的大小產生變動之情況下,藉由上述彈性構件產生彈性變形,將在上述連結位置上之上述上表面對向部與上述基板之間的距離加以保持為一定。 Preferably, the transmission mechanism includes an elastic member, and when the size of the substrate supported by the substrate supporting portion fluctuates, the elastic member is elastically deformed to form the upper surface at the connecting position. The distance between the opposing portion and the substrate is kept constant.

此外也可為,上述旋轉機構係具備有:轉子部,其為以上述中心軸為中心之環狀,且包含有永久磁鐵;及定子部,其為與上述轉子部而對向於以上述中心軸為中心之徑向的環狀,且在與上述轉子部之間產生以上述中心軸為中心之旋轉力,上述轉子部係與上述基板支撐部產生連接。 Further, the rotating mechanism may include a rotor portion having a ring shape centering on the central axis and including a permanent magnet, and a stator portion facing the center portion with respect to the rotor portion The shaft has a radial ring shape centered on the shaft, and a rotational force centering on the central axis is generated between the rotor portion and the rotor portion, and the rotor portion is coupled to the substrate supporting portion.

於該情況下較佳為,基板處理裝置更進一步具備有供對上述基板進行處理之形成有被密閉之內部空間的密閉空間形成部,上述基板支撐部、上述旋轉機構之上述轉子部、上述上表面對向部及上述卡盤部係配置在上述密閉空間形成部內。更佳為,上述密閉空間形成部係具備有具有上部開口之腔室本體、及將上述腔室本體之上述上部開口加以封閉之腔室蓋部,上述腔室蓋部係亦為上述對向部支撐機構之一部分,上述腔室蓋部係相對於上述腔室本體以相對之方式進行昇降,於上述上表面對向部位在上述分離位置之時,上述上表面對向部係自位在上述腔室本體之上方的上述腔室蓋部之一部分而懸垂,於上述上表面對向部位在上述連結位置之時,上述上表面對向部係與抵接或者靠近於上述腔室本體之上述腔室蓋部呈非接觸狀態。 In this case, the substrate processing apparatus further includes a sealed space forming portion in which the sealed internal space is formed to process the substrate, the substrate supporting portion, the rotor portion of the rotating mechanism, and the upper surface. The surface opposing portion and the chuck portion are disposed in the sealed space forming portion. More preferably, the sealed space forming portion includes a chamber body having an upper opening and a chamber cover portion that closes the upper opening of the chamber body, and the chamber cover portion is also the opposite portion a portion of the support mechanism, wherein the chamber cover portion is raised and lowered relative to the chamber body, and the upper surface opposing portion is self-positioned in the cavity when the upper surface facing portion is at the separated position One of the chamber cover portions above the chamber body is suspended, and when the upper surface facing portion is at the connecting position, the upper surface opposing portion is abutting or close to the chamber of the chamber body The cover is in a non-contact state.

與本發明相關之另一種基板處理裝置,其具備有:基板支撐部,其在將一側之主表面即上表面朝向上側之狀態下自下側支撐基板;旋轉機構,其使上述基板支撐部以垂直於上述基板之中心軸為中心進行旋轉;錘部,其可配置在第1相對位置與第2相對位置,該第1相對位置係為於上下方向相對於上述基板支撐部而所不同之位置,該第2相對位置係較上述第1相對位置為更靠上方;錘支撐機構,其藉由支撐上述錘部而將上述錘部配置在上述第2相對位置,藉由解除上述錘部之支撐,使上述錘部位在用於與上述基板及上述基板支撐部一起旋轉之上述第1相對位置;及卡盤部,其設置在上述基板支撐部或者上述錘部,上述卡盤部係具備有:至少3個爪部,其等在沿著上述中心軸而進行觀察之情況下,配置在上述基板之周圍;及傳遞機構,其將藉由位在上述第1相對位置之上述錘部的重量所引起之力加以傳遞至上述至少3個爪部,使上述至少3個爪部以朝向上述中心軸之方式按壓上述基板之邊緣。於該基板處理裝置中,可使基板相對於旋轉中心一方面進行對位一方面進行保持。 Another substrate processing apparatus according to the present invention includes a substrate supporting portion that supports the substrate from the lower side with the upper surface of the main surface on one side facing the upper side, and a rotating mechanism that causes the substrate supporting portion Rotating about a central axis perpendicular to the substrate; the weight portion may be disposed at a first relative position and a second relative position, wherein the first relative position is different from the substrate supporting portion in the vertical direction a position in which the second relative position is higher than the first relative position; and a hammer supporting mechanism that disposes the weight portion at the second relative position by supporting the weight portion, thereby releasing the hammer portion Supporting the hammer portion at the first relative position for rotating together with the substrate and the substrate supporting portion; and the chuck portion provided on the substrate supporting portion or the hammer portion, wherein the chuck portion is provided : at least three claws, which are disposed around the substrate when viewed along the central axis; and a transmission mechanism that is positioned in the first relative position The force caused by the weight of the above-mentioned weight portion to be transmitted to said at least three claw portions, so that the at least three claw portions toward the central axis so as to press the edge of the substrate. In the substrate processing apparatus, the substrate can be held on the one hand with respect to the center of rotation.

較佳為,上述旋轉機構係具備有:轉子部,其為以上述中心軸為中心之環狀,且包含有永久磁鐵;及定子部,其為與上述轉子部而對向於以上述中心軸為中心之徑向的環狀,且在與上述轉子部之間產生以上述中心軸為中心之旋轉力,上述轉子部係與上述基板支撐部產生連接。更佳為,上述錘部係配置在上述基板支撐部與配置在上述基板支撐部之下方的上述轉子部之間,且沿著連接上述基板支撐部與上述轉子部的防護部而能夠於上述上下方向產生移動,上述卡盤部係設置在上述基板支撐部。 Preferably, the rotating mechanism includes a rotor portion having a ring shape centering on the central axis and including a permanent magnet, and a stator portion facing the central portion with the rotor portion The central portion has a radial annular shape, and a rotational force centering on the central axis is generated between the rotor portion and the rotor portion, and the rotor portion is coupled to the substrate supporting portion. More preferably, the hammer portion is disposed between the substrate supporting portion and the rotor portion disposed below the substrate supporting portion, and is movable along the protective portion that connects the substrate supporting portion and the rotor portion. The direction is moved, and the chuck portion is provided on the substrate supporting portion.

該情況之一形態中,上述基板支撐部及上述錘部係為以上述中心軸為中心之環狀。另一形態中,於藉由上述錘支撐機構所進行之支撐被解除之時之上述錘部的位置,係較藉由上述錘支撐機構所進行之支撐之時之上述錘部的位置為更靠近上述轉子部。 In one aspect of the invention, the substrate supporting portion and the hammer portion are annularly formed around the central axis. In another aspect, the position of the weight portion when the support by the hammer supporting mechanism is released is closer to the position of the hammer portion when supported by the hammer supporting mechanism. The rotor portion described above.

上述目的及其他目的、特徵、態樣及利點,藉由參照附圖及以下進行之發明之詳細說明,而闡明。 The above and other objects, features, aspects and advantages of the invention will be apparent from the accompanying drawings.

J1~J4‧‧‧中心軸 J1~J4‧‧‧ center axis

1、1a‧‧‧基板處理裝置 1, 1a‧‧‧ substrate processing device

4、4a、4b‧‧‧卡盤部 4, 4a, 4b‧‧‧ chuck department

4c‧‧‧卡盤部 4c‧‧‧ chuck department

4d‧‧‧卡盤部 4d‧‧‧ chuck department

9‧‧‧基板 9‧‧‧Substrate

10‧‧‧控制部 10‧‧‧Control Department

12‧‧‧處理腔室 12‧‧‧Processing chamber

14‧‧‧基板保持部 14‧‧‧Substrate retention department

15‧‧‧基板旋轉機構 15‧‧‧Substrate rotation mechanism

16‧‧‧液接取部 16‧‧‧Liquid Access Department

17‧‧‧蓋體 17‧‧‧ Cover

18‧‧‧氣液供給部 18‧‧‧Gas and Liquid Supply Department

19‧‧‧氣液排出部 19‧‧‧ gas and liquid discharge

41、41a‧‧‧爪部 41, 41a‧‧‧ claws

42、42a、42b‧‧‧傳遞機構 42, 42a, 42b‧‧‧ transmission agencies

42c‧‧‧傳遞機構 42c‧‧‧Transmission agency

42d‧‧‧傳遞機構 42d‧‧‧Transmission agency

43‧‧‧抵接部 43‧‧‧Apartment

44、45‧‧‧桿 44, 45‧‧‧ pole

46、47‧‧‧軸 46, 47‧‧‧ axis

49‧‧‧連結部 49‧‧‧Connecting Department

51‧‧‧錘部 51‧‧‧ Hammer

52‧‧‧連接構件 52‧‧‧Connecting components

53‧‧‧錘支撐機構 53‧‧‧ hammer support mechanism

53a‧‧‧錘支撐機構 53a‧‧‧ hammer support mechanism

81‧‧‧環狀開口 81‧‧‧ annular opening

91‧‧‧上表面 91‧‧‧Upper surface

92‧‧‧下面 92‧‧‧ below

95‧‧‧基板保持部 95‧‧‧Substrate retention department

96‧‧‧基板支撐部 96‧‧‧Substrate support

97‧‧‧基板按壓部 97‧‧‧Substrate pressing unit

100‧‧‧擴大密閉空間 100‧‧‧Expanding confined spaces

120‧‧‧腔室空間 120‧‧‧chamber space

121‧‧‧腔室本體 121‧‧‧ chamber body

122‧‧‧腔室蓋部 122‧‧‧Cell cover

123‧‧‧頂板 123‧‧‧ top board

124‧‧‧內部空間 124‧‧‧Internal space

126‧‧‧頂板移動機構 126‧‧‧ top board moving mechanism

131‧‧‧腔室開閉機構 131‧‧‧Case opening and closing mechanism

140‧‧‧卡合銷 140‧‧‧ card sales

141‧‧‧基板支撐部 141‧‧‧Substrate support

142‧‧‧支撐部基部 142‧‧‧Support base

143‧‧‧內部空間 143‧‧‧Internal space

144‧‧‧支撐銷 144‧‧‧Support pins

145‧‧‧連絡孔 145‧‧‧Contact hole

151‧‧‧定子部 151‧‧‧ stator

152‧‧‧轉子部 152‧‧‧Rotor Department

161‧‧‧杯部 161‧‧‧ Cup

162‧‧‧杯部移動機構 162‧‧‧ Cup mobile agency

163‧‧‧杯對向部 163‧‧‧ Cup Opposite Department

165‧‧‧液接取凹部 165‧‧‧Liquid access recess

180‧‧‧加熱氣體供給噴嘴 180‧‧‧heated gas supply nozzle

181‧‧‧上部噴嘴 181‧‧‧ upper nozzle

182‧‧‧下部噴嘴 182‧‧‧ lower nozzle

183‧‧‧藥液供給部 183‧‧‧Drug supply department

184‧‧‧純水供給部 184‧‧‧ Pure Water Supply Department

185‧‧‧IPA供給部 185‧‧‧IPA Supply Department

186‧‧‧惰性氣體供給部 186‧‧‧Inert gas supply

187‧‧‧加熱氣體供給部 187‧‧‧Heating gas supply department

191‧‧‧第1排出流路 191‧‧‧1st discharge channel

192‧‧‧第2排出流路 192‧‧‧2nd discharge channel

193‧‧‧氣液分離部 193‧‧ ‧ gas-liquid separation department

194‧‧‧外側排氣部 194‧‧‧Outside exhaust

195‧‧‧藥液回收部 195‧‧‧Drug Recycling Department

196‧‧‧排液部 196‧‧‧Draining Department

197‧‧‧氣液分離 197‧‧‧ gas-liquid separation

198‧‧‧內側排氣部 198‧‧‧Inside exhaust

199‧‧‧排液部 199‧‧‧Draining Department

210‧‧‧腔室底部 210‧‧‧Bottom of the chamber

211‧‧‧中央部 211‧‧‧ Central Department

212‧‧‧內側壁部 212‧‧‧Inside wall

213‧‧‧環狀底部 213‧‧‧ring bottom

214‧‧‧腔室側壁部 214‧‧‧The side wall of the chamber

215‧‧‧外側壁部 215‧‧‧Outer side wall

216‧‧‧基部 216‧‧‧ base

217‧‧‧下部環狀空間 217‧‧‧Lower annular space

222‧‧‧板支撐部 222‧‧‧ board support

223‧‧‧筒部 223‧‧‧ Tube

224‧‧‧凸緣部 224‧‧‧Flange

231‧‧‧唇封 231‧‧‧ lip seal

232‧‧‧唇封 232‧‧‧ lip seal

235‧‧‧頂板軸 235‧‧‧Top plate shaft

237‧‧‧被支撐部 237‧‧‧Supported Department

238‧‧‧筒部 238‧‧‧ Tube

239‧‧‧凸緣部 239‧‧‧Flange

241、241a‧‧‧卡合部 241, 241a‧‧ ‧ Engagement Department

242、242a‧‧‧凹部 242, 242a‧‧‧ recess

243、437‧‧‧磁鐵 243, 437‧‧‧ magnets

261‧‧‧第1磁鐵 261‧‧‧1st magnet

262‧‧‧第2磁鐵 262‧‧‧2nd magnet

263‧‧‧磁鐵移動機構 263‧‧‧Magnet moving mechanism

264‧‧‧環狀孔 264‧‧‧Ring hole

410‧‧‧爪部支撐台 410‧‧‧Claw support table

411‧‧‧爪部本體 411‧‧‧ claw body

412‧‧‧上表面 412‧‧‧ upper surface

413‧‧‧突出部 413‧‧‧Protruding

421‧‧‧銷 421‧‧ ‧ sales

422‧‧‧銷 422‧‧ ‧ sales

423‧‧‧波紋管 423‧‧‧ Bellows

424‧‧‧銷 424‧‧ ‧ sales

425‧‧‧銷 425‧‧ sales

431‧‧‧抵接部收容部 431‧‧‧Abutment Department

432‧‧‧上側支撐部 432‧‧‧Upper support

433‧‧‧下側支撐部 433‧‧‧lower support

434‧‧‧圓板部 434‧‧‧round board

435‧‧‧彈簧 435‧‧ ‧ spring

436‧‧‧彈性構件 436‧‧‧Flexible components

440‧‧‧桿支撐部 440‧‧‧ rod support

441‧‧‧長孔 441‧‧‧ long hole

450‧‧‧桿支撐部 450‧‧‧ rod support

451‧‧‧長孔 451‧‧‧ long hole

460‧‧‧軸支撐部 460‧‧‧Axis support

461‧‧‧桿 461‧‧‧ pole

462‧‧‧長孔 462‧‧‧ long hole

463‧‧‧桿 463‧‧‧ rod

464‧‧‧長孔 464‧‧‧ long hole

470‧‧‧軸支撐部 470‧‧‧Axis support

492‧‧‧連結部支撐部 492‧‧‧ Linkage Support

493‧‧‧波紋管 493‧‧‧ bellows

498‧‧‧被支撐部 498‧‧‧Supported Department

511‧‧‧貫通孔 511‧‧‧through holes

531‧‧‧空氣汽缸 531‧‧ Air cylinder

532‧‧‧活塞桿 532‧‧‧Piston rod

533‧‧‧支撐構件 533‧‧‧Support members

534‧‧‧前端面 534‧‧‧ front end

535‧‧‧波紋管 535‧‧‧ Bellows

536‧‧‧支撐臂 536‧‧‧Support arm

537‧‧‧支撐構件 537‧‧‧Support members

611‧‧‧側壁部 611‧‧‧ Sidewall

612‧‧‧上表面部 612‧‧‧Upper surface

617‧‧‧波紋管 617‧‧‧ Bellows

951‧‧‧卡合部 951‧‧‧With the Ministry

952‧‧‧卡合銷 952‧‧‧ card sales

960‧‧‧支撐部基部 960‧‧‧Support base

961‧‧‧第1接觸部 961‧‧‧1st contact

971‧‧‧第2接觸部 971‧‧‧2nd contact

圖1為顯示第1實施形態之基板處理裝置之剖視圖。 Fig. 1 is a cross-sectional view showing a substrate processing apparatus according to a first embodiment.

圖2為顯示氣液供給部及氣液排出部之方塊圖。 Fig. 2 is a block diagram showing a gas-liquid supply unit and a gas-liquid discharge unit.

圖3為顯示卡盤部之構成之圖。 Fig. 3 is a view showing the configuration of a chuck portion.

圖4為顯示基板處理裝置中之基板之處理流程之圖。 4 is a view showing a processing flow of a substrate in a substrate processing apparatus.

圖5為顯示基板處理裝置之剖視圖。 Fig. 5 is a cross-sectional view showing the substrate processing apparatus.

圖6為顯示卡盤部及頂板之圖。 Figure 6 is a view showing the chuck portion and the top plate.

圖7為顯示基板處理裝置之剖視圖。 Fig. 7 is a cross-sectional view showing the substrate processing apparatus.

圖8為顯示比較例之基板處理裝置中之基板保持部附近之剖視圖。 8 is a cross-sectional view showing the vicinity of a substrate holding portion in a substrate processing apparatus of a comparative example.

圖9為顯示卡盤部之另一例之圖。 Fig. 9 is a view showing another example of the chuck portion.

圖10為顯示抵接部及複數個軸之立體圖。 Fig. 10 is a perspective view showing the abutting portion and the plurality of shafts.

圖11為顯示爪部之俯視圖。 Fig. 11 is a plan view showing the claw portion.

圖12為顯示卡盤部之又一例之圖。 Fig. 12 is a view showing still another example of the chuck portion.

圖13為顯示頂板移動機構之構成之圖。 Fig. 13 is a view showing the configuration of a top plate moving mechanism.

圖14為顯示第2實施形態之基板處理裝置之剖視圖。 Fig. 14 is a cross-sectional view showing the substrate processing apparatus of the second embodiment.

圖15為顯示卡盤部及錘支撐機構之圖。 Fig. 15 is a view showing a chuck portion and a hammer supporting mechanism.

圖16為用以說明卡盤部及錘支撐機構之動作之圖。 Fig. 16 is a view for explaining the operation of the chuck portion and the hammer supporting mechanism.

圖17為顯示基板處理裝置之剖視圖。 Figure 17 is a cross-sectional view showing the substrate processing apparatus.

圖18為顯示基板處理裝置之剖視圖。 Figure 18 is a cross-sectional view showing the substrate processing apparatus.

圖19為顯示卡盤部之再一例之圖。 Fig. 19 is a view showing still another example of the chuck portion.

圖20為顯示連結部及複數個軸之立體圖。 Fig. 20 is a perspective view showing a joint portion and a plurality of shafts.

圖21為顯示爪部之俯視圖。 Fig. 21 is a plan view showing the claw portion.

圖22為顯示錘支撐機構之另一例之圖。 Fig. 22 is a view showing another example of the hammer supporting mechanism.

圖23為顯示錘支撐機構及連結部之另一例之圖。 Fig. 23 is a view showing another example of the hammer supporting mechanism and the connecting portion.

圖24為顯示第3實施形態之卡盤部之構成之圖。 Fig. 24 is a view showing the configuration of a chuck portion of a third embodiment;

圖25為顯示卡盤部及頂板之圖。 Figure 25 is a view showing the chuck portion and the top plate.

圖26為顯示卡盤部之另一例之圖。 Fig. 26 is a view showing another example of the chuck portion.

圖27為顯示卡盤部之又一例之圖。 Fig. 27 is a view showing still another example of the chuck portion.

圖1為顯示本發明之第1實施形態之基板處理裝置1之剖視圖。基板處理裝置1係將處理液供給於大致圓板狀之半導體基板9(以下簡稱為「基板9」),對基板9逐片地進行處理之單片式之裝置。圖1中,對基板處理裝置1之局部構成之截面,省略平行斜線之提供(其他之剖視圖中也同樣)。 Fig. 1 is a cross-sectional view showing a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 is a one-piece apparatus in which a processing liquid is supplied to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as "substrate 9"), and the substrate 9 is processed one by one. In Fig. 1, the cross section of the substrate processing apparatus 1 is omitted, and the parallel oblique lines are omitted (the same applies to other cross-sectional views).

基板處理裝置1具備處理腔室12、頂板123、腔室開閉機構131、基板保持部14、基板旋轉機構15、液接取部16、及蓋體17。蓋體17係覆蓋處理腔室12之上方及側面。 The substrate processing apparatus 1 includes a processing chamber 12, a top plate 123, a chamber opening and closing mechanism 131, a substrate holding portion 14, a substrate rotating mechanism 15, a liquid picking portion 16, and a lid body 17. The cover 17 covers the upper side and the side of the processing chamber 12.

處理腔室12具備腔室本體121及腔室蓋部122。處理腔室12係以朝上下方向之中心軸J1為中心之有蓋及有底之大致圓筒狀。腔室本體121具備腔室底部210及腔室側壁部214。腔室 底部210具備:大致圓板狀之中央部211;自中央部211之外緣部朝下方擴展之大致圓筒狀之內側壁部212;自內側壁部212之下端朝徑向外側擴展之大致圓環板狀之環狀底部213;自環狀底部213之外緣部朝上方擴展之大致圓筒狀之外側壁部215;及自外側壁部215之上端部朝徑向外側擴展之大致圓環板狀之基部216。 The processing chamber 12 is provided with a chamber body 121 and a chamber cover portion 122. The processing chamber 12 has a cover and a substantially cylindrical shape with a bottom centered on the central axis J1 in the vertical direction. The chamber body 121 is provided with a chamber bottom portion 210 and a chamber side wall portion 214. Chamber The bottom portion 210 includes a substantially disk-shaped central portion 211, a substantially cylindrical inner side wall portion 212 that expands downward from the outer edge portion of the central portion 211, and a substantially circular shape that extends radially outward from the lower end of the inner side wall portion 212. a ring-shaped annular bottom portion 213; a substantially cylindrical outer side wall portion 215 that expands upward from an outer edge portion of the annular bottom portion 213; and a substantially annular outer ring portion that extends outward from the upper end portion of the outer side wall portion 215 Plate-shaped base 216.

腔室側壁部214係以中心軸J1為中心之環狀。腔室側壁部214係自基部216之內緣部朝上方突出。形成腔室側壁部214之構件,如後述兼作液接取部16之一部分。以下之說明中,稱由腔室側壁部214、外側壁部215、環狀底部213、內側壁部212及中央部211之外緣部所包圍之空間為下部環狀空間217。 The chamber side wall portion 214 is annularly centered on the central axis J1. The chamber side wall portion 214 protrudes upward from the inner edge portion of the base portion 216. The member forming the chamber side wall portion 214 also serves as a part of the liquid take-up portion 16 as will be described later. In the following description, the space surrounded by the chamber side wall portion 214, the outer wall portion 215, the annular bottom portion 213, the inner side wall portion 212, and the outer edge portion of the center portion 211 is referred to as a lower annular space 217.

於基板9支撐於基板保持部14之基板支撐部141(後述)之情況下,基板9之下面係與腔室底部210之中央部211之上表面對向。以下之說明中,稱腔室底部210之中央部211為「下面對向部211」。 When the substrate 9 is supported by the substrate supporting portion 141 (described later) of the substrate holding portion 14, the lower surface of the substrate 9 faces the upper surface of the central portion 211 of the chamber bottom portion 210. In the following description, the central portion 211 of the chamber bottom portion 210 is referred to as "lower facing portion 211".

腔室蓋部122係垂直於中心軸J1之大致圓板狀,包括處理腔室12之上部。腔室蓋部122係將腔室本體121之上部開口密閉。圖1中,顯示腔室蓋部122自腔室本體121分離之狀態。於腔室蓋部122將腔室本體121之上部開口密閉時,腔室蓋部122之外緣部與腔室側壁部214之上部接合。 The chamber cover portion 122 is substantially disk-shaped perpendicular to the central axis J1, including the upper portion of the processing chamber 12. The chamber cover 122 seals the upper opening of the chamber body 121. In Fig. 1, a state in which the chamber cover portion 122 is separated from the chamber body 121 is shown. When the chamber cover portion 122 seals the upper opening of the chamber body 121, the outer edge portion of the chamber cover portion 122 is joined to the upper portion of the chamber side wall portion 214.

腔室開閉機構131係用以使處理腔室12之可動部即腔室蓋部122相對於處理腔室12之其他部位即腔室本體121,於上下方向相對地移動。腔室開閉機構131係使腔室蓋部122昇降之蓋部昇降機構。於藉由腔室開閉機構131使腔室蓋部122於上下方向移動時,頂板123也與腔室蓋部122一起於上下方向移動。腔室蓋 部122係與腔室本體121接合而將上部開口密閉,而且,藉由朝腔室本體121按壓腔室蓋部122,於處理腔室12內形成被密閉之內部空間即腔室空間120(參照圖7)。換言之,藉由腔室蓋部122將腔室本體121之上部開口密閉,藉以密閉腔室空間120。腔室蓋部122及腔室本體121係形成腔室空間120之密閉空間形成部。 The chamber opening and closing mechanism 131 is configured to relatively move the chamber cover portion 122, which is a movable portion of the processing chamber 12, with respect to the chamber body 121 which is another portion of the processing chamber 12 in the vertical direction. The chamber opening and closing mechanism 131 is a lid elevating mechanism that elevates and lowers the chamber lid portion 122. When the chamber lid portion 122 is moved in the vertical direction by the chamber opening and closing mechanism 131, the top plate 123 also moves in the vertical direction together with the chamber lid portion 122. Chamber cover The portion 122 is joined to the chamber body 121 to seal the upper opening, and the chamber cover portion 122 is pressed toward the chamber body 121 to form a sealed internal space, that is, the chamber space 120 in the processing chamber 12 (refer to Figure 7). In other words, the upper portion of the chamber body 121 is sealed by the chamber cover portion 122, thereby sealing the chamber space 120. The chamber cover portion 122 and the chamber body 121 form a sealed space forming portion of the chamber space 120.

基板保持部14係配置於腔室空間120,且以水平狀態保持基板9。亦即,基板9係於形成有微細圖案之一主表面91(以下稱為「上表面91」)垂直於中心軸J1且面向上側之狀態下藉由基板保持部14所保持。基板保持部14具備上述基板支撐部141、及設於基板支撐部141之卡盤部4。基板支撐部141係以中心軸J1為中心之大致圓環狀。基板支撐部141係具備以中心軸J1為中心之大致圓環板狀之支撐部基部142、及於支撐部基部142上沿圓周方向排列配置之複數個支撐銷144。藉由複數個支撐銷144自下側支撐基板9之外緣部(亦即,包括外周緣之外周緣附近之部位)。卡盤部4具備複數個爪部41。在沿中心軸J1觀察之情況下,複數個爪部41係配置於基板9之周圍。關於卡盤部4之詳細構造,容待後述。 The substrate holding portion 14 is disposed in the chamber space 120 and holds the substrate 9 in a horizontal state. In other words, the substrate 9 is held by the substrate holding portion 14 in a state in which one of the main surfaces 91 (hereinafter referred to as "upper surface 91") on which the fine pattern is formed is perpendicular to the central axis J1 and faces upward. The substrate holding portion 14 includes the substrate supporting portion 141 and a chuck portion 4 provided on the substrate supporting portion 141. The substrate supporting portion 141 has a substantially annular shape centering on the central axis J1. The substrate supporting portion 141 includes a substantially annular plate-shaped support portion base portion 142 centered on the central axis J1, and a plurality of support pins 144 arranged in the circumferential direction on the support portion base portion 142. The outer edge portion of the substrate 9 is supported from the lower side by a plurality of support pins 144 (that is, a portion including the outer periphery of the outer peripheral edge). The chuck portion 4 includes a plurality of claw portions 41. When viewed along the central axis J1, a plurality of claw portions 41 are disposed around the substrate 9. The detailed structure of the chuck unit 4 will be described later.

頂板123係垂直於中心軸J1之大致圓板狀。頂板123係配置於腔室蓋部122之下方且基板支撐部141之上方。頂板123係於中央具有開口。若基板9被基板支撐部141支撐,則基板9之上表面91與垂直於中心軸J1之頂板123的下面對向。亦即,頂板123係與基板9之上表面91對向之上表面對向部。頂板123之直徑係較基板9之直徑大,且頂板123之外周緣係較基板9之外周緣全周位於徑向外側。於頂板123之外緣部之下面沿圓周方向配置有複 數個卡合部241。於各卡合部241之下部設置有朝上方凹陷之凹部。 The top plate 123 is substantially disk-shaped perpendicular to the central axis J1. The top plate 123 is disposed below the chamber cover portion 122 and above the substrate support portion 141. The top plate 123 has an opening in the center. When the substrate 9 is supported by the substrate supporting portion 141, the upper surface 91 of the substrate 9 faces the lower surface of the top plate 123 perpendicular to the central axis J1. That is, the top plate 123 is opposed to the upper surface 91 of the substrate 9 toward the upper surface. The diameter of the top plate 123 is larger than the diameter of the substrate 9, and the outer periphery of the top plate 123 is located radially outward of the outer periphery of the outer periphery of the substrate 9. Arranged in the circumferential direction below the outer edge portion of the top plate 123 A plurality of engaging portions 241. A concave portion that is recessed upward is provided at a lower portion of each of the engaging portions 241.

於圖1所示之狀態下,頂板123係藉由腔室蓋部122所懸吊支撐。詳細而言,腔室蓋部122係於中央部具有大致環狀之板支撐部222。板支撐部222具備以中心軸J1為中心之大致圓筒狀之筒部223、及以中心軸J1為中心之大致圓環狀之凸緣部224。凸緣部224係自筒部223之下端朝徑向內側擴展。 In the state shown in FIG. 1, the top plate 123 is suspended and supported by the chamber cover portion 122. Specifically, the chamber cover portion 122 has a substantially annular plate support portion 222 at the center portion. The plate support portion 222 includes a substantially cylindrical tubular portion 223 centered on the central axis J1 and a substantially annular flange portion 224 centered on the central axis J1. The flange portion 224 is expanded radially inward from the lower end of the tubular portion 223.

頂板123具備環狀之被支撐部237。被支撐部237具備以中心軸J1為中心之大致圓筒狀之筒部238、及以中心軸J1為中心之大致圓環狀之凸緣部239。筒部238係自頂板123之上表面朝上方擴展。凸緣部239係自筒部238之上端朝徑向外側擴展。筒部238係位於板支撐部222之筒部223之徑向內側。凸緣部239係位於板支撐部222之凸緣部224之上方,且於上下方向與凸緣部224對向。藉由被支撐部237之凸緣部239之下面接觸於板支撐部222之凸緣部224的上表面,以自腔室蓋部122懸吊之方式將頂板123安裝於腔室蓋部122。 The top plate 123 is provided with an annular supported portion 237. The supported portion 237 includes a substantially cylindrical tubular portion 238 centered on the central axis J1 and a substantially annular flange portion 239 centered on the central axis J1. The tubular portion 238 extends upward from the upper surface of the top plate 123. The flange portion 239 expands radially outward from the upper end of the tubular portion 238. The tubular portion 238 is located radially inward of the tubular portion 223 of the plate support portion 222. The flange portion 239 is located above the flange portion 224 of the plate support portion 222 and faces the flange portion 224 in the vertical direction. The top plate 123 is attached to the chamber cover portion 122 by being suspended from the chamber cover portion 122 by the lower surface of the flange portion 239 of the supported portion 237 contacting the upper surface of the flange portion 224 of the plate supporting portion 222.

基板處理裝置1中,於腔室蓋部122自腔室本體121朝上方分離之狀態下,藉由腔室蓋部122之板支撐部222支撐頂板123,將頂板123配置於相對於基板支撐部141朝上方分離之位置(以下稱為「分離位置」)。實際上,腔室蓋部122係藉由腔室開閉機構131所支撐,腔室開閉機構131及腔室蓋部122實質上係支撐上表面對向部即頂板123之對向部支撐機構。 In the substrate processing apparatus 1, the top plate 123 is supported by the plate supporting portion 222 of the chamber cover portion 122 in a state where the chamber cover portion 122 is separated upward from the chamber body 121, and the top plate 123 is disposed relative to the substrate supporting portion. 141 The position separated upwards (hereinafter referred to as "separation position"). Actually, the chamber cover portion 122 is supported by the chamber opening and closing mechanism 131, and the chamber opening and closing mechanism 131 and the chamber cover portion 122 substantially support the opposing portion supporting mechanism of the top surface facing portion, that is, the top plate 123.

基板旋轉機構15係一中空馬達。基板旋轉機構15包括以中心軸J1為中心之環狀之定子部151、及環狀之轉子部152。轉子部152包括大致圓環狀之永久磁鐵。永久磁鐵之表面係 由PTFE樹脂所封裝。轉子部152係於處理腔室12內被配置於下部環狀空間217內。於轉子部152之上部經由連接構件安裝有基板支撐部141之支撐部基部142。支撐部基部142係配置於轉子部152之上方。 The substrate rotating mechanism 15 is a hollow motor. The substrate rotating mechanism 15 includes an annular stator portion 151 centered on the central axis J1 and an annular rotor portion 152. The rotor portion 152 includes a substantially annular permanent magnet. Surface of permanent magnet It is encapsulated by PTFE resin. The rotor portion 152 is disposed in the lower annular space 217 in the processing chamber 12. A support base 142 of the substrate support portion 141 is attached to the upper portion of the rotor portion 152 via a connection member. The support base 142 is disposed above the rotor portion 152.

定子部151係於處理腔室12外配置於轉子部152之周圍、即以中心軸J1為中心之徑向外側。本實施形態中,定子部151係固定於腔室底部210之外側壁部215及基部216,位於液接取部16之下方。定子部151包括配置於以中心軸J1為中心之圓周方向的複數個線圈。 The stator portion 151 is disposed outside the processing chamber 12 around the rotor portion 152, that is, radially outward of the central axis J1. In the present embodiment, the stator portion 151 is fixed to the outer wall portion 215 and the base portion 216 of the chamber bottom portion 210, and is located below the liquid connection portion 16. The stator portion 151 includes a plurality of coils disposed in a circumferential direction around the central axis J1.

藉由朝定子部151供給電流,於定子部151與轉子部152之間產生以中心軸J1為中心之旋轉力。藉此,轉子部152以中心軸J1為中心以水平狀態進行旋轉。藉由作用於定子部151與轉子部152之間之磁力,轉子部152於處理腔室12內既不直接也不間接地與處理腔室12接觸而懸浮於處理腔室12內,使基板9與基板支撐部141一起以懸浮狀態且以中心軸J1為中心進行旋轉。如此,包含轉子部152之旋轉體係與不旋轉之其他構件以非接觸狀態進行旋轉。 By supplying a current to the stator portion 151, a rotational force centering on the central axis J1 is generated between the stator portion 151 and the rotor portion 152. Thereby, the rotor portion 152 rotates in a horizontal state about the central axis J1. By acting on the magnetic force between the stator portion 151 and the rotor portion 152, the rotor portion 152 is neither directly nor indirectly in contact with the processing chamber 12 in the processing chamber 12 and suspended in the processing chamber 12, so that the substrate 9 is The substrate support portion 141 is rotated in a suspended state and centered on the central axis J1. In this manner, the rotating system including the rotor portion 152 rotates in a non-contact state with other members that do not rotate.

液接取部16具備杯部161、杯部移動機構162及杯對向部163。杯部161係以中心軸J1為中心之環狀,且位於處理腔室12之徑向外側全周。杯部移動機構162係使杯部161沿上下方向移動。杯部移動機構162係配置於杯部161之徑向外側。杯部移動機構162係配置於與上述腔室開閉機構131在圓周方向上不同之位置。杯對向部163係位於杯部161之下方,且於上下方向與杯部161對向。杯對向部163係形成腔室側壁部214之構件之一部分。 杯對向部163具有位於腔室側壁部214之徑向外側之環狀之液接取凹部165。 The liquid take-up portion 16 includes a cup portion 161, a cup moving mechanism 162, and a cup opposing portion 163. The cup portion 161 is annularly centered on the central axis J1 and is located on the radially outer side of the processing chamber 12 for the entire circumference. The cup moving mechanism 162 moves the cup portion 161 in the vertical direction. The cup moving mechanism 162 is disposed on the radially outer side of the cup portion 161. The cup moving mechanism 162 is disposed at a position different from the chamber opening and closing mechanism 131 in the circumferential direction. The cup opposing portion 163 is located below the cup portion 161 and faces the cup portion 161 in the vertical direction. The cup opposing portion 163 forms part of a member of the chamber sidewall portion 214. The cup opposing portion 163 has an annular liquid receiving recess 165 located radially outward of the chamber side wall portion 214.

杯部161具備側壁部611、上表面部612及波紋管617。側壁部611係以中心軸J1為中心之大致圓筒狀。上表面部612係以中心軸J1為中心之大致圓環板狀,且自側壁部611之上端部朝徑向內側及徑向外側擴展。側壁部611之下部係位於杯對向部163之液接取凹部165內。 The cup portion 161 includes a side wall portion 611, an upper surface portion 612, and a bellows 617. The side wall portion 611 has a substantially cylindrical shape centering on the central axis J1. The upper surface portion 612 has a substantially annular plate shape centering on the central axis J1, and extends from the upper end portion of the side wall portion 611 toward the radially inner side and the radially outer side. The lower portion of the side wall portion 611 is located in the liquid receiving recess 165 of the cup opposing portion 163.

波紋管617係以中心軸J1為中心之大致圓筒狀,且可於上下方向伸縮。波紋管617係於側壁部611之徑向外側,設於側壁部611之周圍全周。波紋管617係由不使氣體或液體通過之材料形成。波紋管617之上端部係連接於上表面部612之外緣部下面全周。換言之,波紋管617之上端部係經由上表面部612而間接地連接於側壁部611。波紋管617與上表面部612之連接部被密封,以防止氣體或液體之通過。波紋管617之下端部係經由杯對向部163而間接地連接於腔室本體121。於波紋管617之下端部與杯對向部163之連接部中,也防止氣體或液體之通過。 The bellows 617 has a substantially cylindrical shape centering on the central axis J1 and is expandable and contractible in the vertical direction. The bellows 617 is provided on the radially outer side of the side wall portion 611 and is provided around the entire circumference of the side wall portion 611. The bellows 617 is formed of a material that does not allow gas or liquid to pass therethrough. The upper end portion of the bellows 617 is connected to the entire lower circumference of the outer edge portion of the upper surface portion 612. In other words, the upper end portion of the bellows 617 is indirectly connected to the side wall portion 611 via the upper surface portion 612. The connection portion of the bellows 617 and the upper surface portion 612 is sealed to prevent the passage of gas or liquid. The lower end of the bellows 617 is indirectly connected to the chamber body 121 via the cup opposing portion 163. In the connection between the lower end of the bellows 617 and the cup facing portion 163, the passage of gas or liquid is also prevented.

於腔室蓋部122之中央安裝有以中心軸J1為中心之大致圓柱狀之上部噴嘴181。上部噴嘴181係與基板9之上表面91之中央部對向地固定於腔室蓋部122。上部噴嘴181可插入頂板123之中央之開口。於腔室底部210之下面對向部211之中央安裝有下部噴嘴182。下部噴嘴182係與基板9之下面92之之中央部對向。於下面對向部211還安裝有複數個加熱氣體供給噴嘴180。複數個加熱氣體供給噴嘴180例如於以中心軸J1為中心之圓周方向以等角度間隔配置。 A substantially cylindrical upper nozzle 181 centering on the central axis J1 is attached to the center of the chamber cover 122. The upper nozzle 181 is fixed to the chamber cover portion 122 opposite to the central portion of the upper surface 91 of the substrate 9. The upper nozzle 181 can be inserted into the opening in the center of the top plate 123. A lower nozzle 182 is mounted at the center of the facing portion 211 below the bottom portion 210 of the chamber. The lower nozzle 182 is opposed to the central portion of the lower surface 92 of the substrate 9. A plurality of heating gas supply nozzles 180 are also mounted to the lower facing portion 211. The plurality of heating gas supply nozzles 180 are disposed at equal angular intervals, for example, in the circumferential direction around the central axis J1.

圖2為顯示基板處理裝置1具備之氣液供給部18及氣液排出部19之方塊圖。氣液供給部18除上述之加熱氣體供給噴嘴180、上部噴嘴181及下部噴嘴182外,還具備藥液供給部183、純水供給部184、IPA供給部185、惰性氣體供給部186及加熱氣體供給部187。藥液供給部183、純水供給部184及IPA供給部185分別經由閥而與上部噴嘴181連接。下部噴嘴182經由閥而與純水供給部184連接。上部噴嘴181經由閥還與惰性氣體供給部186連接。上部噴嘴181係於中央具有液吐出口,且於其周圍具有氣體噴出口。因此,正確而言,上部噴嘴181之一部分係朝處理腔室12之內部供給氣體之廣義之氣體供給部之一部分。下部噴嘴182係於中央具有液吐出口。複數個加熱氣體供給噴嘴180係經由閥而與加熱氣體供給部187連接。 FIG. 2 is a block diagram showing the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 provided in the substrate processing apparatus 1. The gas-liquid supply unit 18 includes a chemical liquid supply unit 183, a pure water supply unit 184, an IPA supply unit 185, an inert gas supply unit 186, and a heating gas in addition to the above-described heating gas supply nozzle 180, upper nozzle 181, and lower nozzle 182. Supply unit 187. The chemical solution supply unit 183, the pure water supply unit 184, and the IPA supply unit 185 are connected to the upper nozzle 181 via valves, respectively. The lower nozzle 182 is connected to the pure water supply unit 184 via a valve. The upper nozzle 181 is also connected to the inert gas supply unit 186 via a valve. The upper nozzle 181 has a liquid discharge port at the center and a gas discharge port around the upper nozzle 181. Therefore, correctly, one portion of the upper nozzle 181 is part of a gas supply portion that is supplied to the inside of the processing chamber 12 in a broad sense. The lower nozzle 182 has a liquid discharge port at the center. A plurality of heating gas supply nozzles 180 are connected to the heating gas supply unit 187 via a valve.

連接於液接取部16之液接取凹部165之第1排出流路191係連接於氣液分離部193。氣液分離部193分別經由閥而與外側排氣部194、藥液回收部195及排液部196連接。連接於處理腔室12之腔室底部210之第2排出流路192係連接於氣液分離部197。氣液分離部197分別經由閥而與內側排氣部198及排液部199連接。氣液供給部18及氣液排出部19之各構成係藉由控制部10所控制。腔室開閉機構131、基板旋轉機構15及杯部移動機構162(參照圖1)也藉由控制部10所控制。 The first discharge flow path 191 connected to the liquid connection recess 165 of the liquid connection unit 16 is connected to the gas-liquid separation unit 193. The gas-liquid separation unit 193 is connected to the outer exhaust unit 194, the chemical liquid recovery unit 195, and the liquid discharge unit 196 via a valve. The second discharge flow path 192 connected to the chamber bottom portion 210 of the processing chamber 12 is connected to the gas-liquid separation portion 197. The gas-liquid separation unit 197 is connected to the inner exhaust unit 198 and the liquid discharge unit 199 via a valve. The respective configurations of the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 are controlled by the control unit 10. The chamber opening and closing mechanism 131, the substrate rotating mechanism 15, and the cup moving mechanism 162 (see FIG. 1) are also controlled by the control unit 10.

本實施形態中,自藥液供給部183經由上部噴嘴181供给於基板9上之藥液,例如為氟酸、氫氧化四甲基銨水溶液等之蝕刻液。純水供給部184經由上部噴嘴181及下部噴嘴182將純水(DIW:Deionized Water)供給於基板9。IPA供給部185經由上部噴 嘴181將異丙醇(IPA)供給於基板9上。基板處理裝置1中,還可設置供給上述以外之處理液之處理液供給部。 In the present embodiment, the chemical solution supplied from the chemical solution supply unit 183 to the substrate 9 via the upper nozzle 181 is, for example, an etching solution such as hydrofluoric acid or a tetramethylammonium hydroxide aqueous solution. The pure water supply unit 184 supplies pure water (DIW: Deionized Water) to the substrate 9 via the upper nozzle 181 and the lower nozzle 182. IPA supply unit 185 sprays through the upper portion The nozzle 181 supplies isopropyl alcohol (IPA) to the substrate 9. In the substrate processing apparatus 1, a processing liquid supply unit that supplies a processing liquid other than the above may be provided.

此外,惰性氣體供給部186係經由上部噴嘴181朝處理腔室12內供給惰性氣體。加熱氣體供給部187係經由複數個加熱氣體供給噴嘴180朝基板9之下面92供給加熱之氣體(例如,加熱為120~130℃之高溫惰性氣體)。本實施形態中,惰性氣體供給部186及加熱氣體供給部187所利用之氣體為氮氣(N2),但也可為氮氣以外之氣體。 Further, the inert gas supply unit 186 supplies an inert gas into the processing chamber 12 via the upper nozzle 181. The heating gas supply unit 187 supplies a heated gas (for example, a high-temperature inert gas heated to 120 to 130 ° C) to the lower surface 92 of the substrate 9 via a plurality of heating gas supply nozzles 180. In the present embodiment, the gas used by the inert gas supply unit 186 and the heating gas supply unit 187 is nitrogen gas (N 2 ), but may be a gas other than nitrogen.

圖3為顯示卡盤部4之一部分之構成之圖。如已述之,卡盤部4係設於基板支撐部141,卡盤部4之一部分係設於以中心軸J1為中心之圓環狀之支撐部基部142之內部。圖3中,關於支撐部基部142及後述之抵接部收容部431內之一部分構成,顯示包含中心軸J1之面而構成之截面(圖6及圖9中也同樣)。卡盤部4具備已述之複數個爪部41及傳遞機構42。如已述之,複數個爪部41係於藉由複數個支撐銷144所支撐之基板9之周圍沿圓周方向排列配置。複數個爪部41之個數至少為3個,於該至少3個爪部41中於圓周方向上相鄰接之2個爪部41之各組合中,連結該2個爪部41與中心軸J1之線所夾之角度小於180度。該至少3個爪部41較佳為沿圓周方向以等角度間隔設置。本實施形態中,4個爪部41係沿圓周方向以等角度間隔設置。 FIG. 3 is a view showing the configuration of a portion of the chuck portion 4. As described above, the chuck portion 4 is provided on the substrate supporting portion 141, and one portion of the chuck portion 4 is provided inside the annular supporting portion base portion 142 centering on the central axis J1. In FIG. 3, a part of the support base portion 142 and the abutting portion accommodating portion 431 which will be described later is formed, and a cross section including the surface of the central axis J1 is displayed (the same applies to FIGS. 6 and 9). The chuck portion 4 includes a plurality of claw portions 41 and a transmission mechanism 42 which have been described. As described above, the plurality of claw portions 41 are arranged in the circumferential direction around the periphery of the substrate 9 supported by the plurality of support pins 144. The number of the plurality of claw portions 41 is at least three, and the two claw portions 41 and the central axis are coupled to each of the two claw portions 41 adjacent to each other in the circumferential direction of the at least three claw portions 41. The angle of the line of J1 is less than 180 degrees. The at least three claw portions 41 are preferably disposed at equal angular intervals in the circumferential direction. In the present embodiment, the four claw portions 41 are provided at equal angular intervals in the circumferential direction.

傳遞機構42具備相對於各爪部41而設置之抵接部43及複數個桿44、45。抵接部43係上下方向延伸之桿構件,一部分配置於設在支撐部基部142之上表面上之抵接部收容部431內。於抵接部收容部431內設置有圓環狀之上側支撐部432及下側支撐 部433,且藉由上側及下側支撐部432、433於上下方向可移動地支撐抵接部43。抵接部43之下端部係配置於形成在支撐部基部142之內部空間143。於該內部空間143配置有桿44,桿44之一端部經由銷421連接於抵接部43之下端部。於桿44形成有沿桿44之長邊方向延伸之長孔441,銷421係插入長孔441。桿44係藉由設於內部空間143之桿支撐部440,以垂直於圖3之紙面之旋轉軸為中心而可旋轉地支撐。 The transmission mechanism 42 includes an abutting portion 43 provided with respect to each of the claw portions 41 and a plurality of rods 44 and 45. The abutting portion 43 is a rod member that extends in the vertical direction, and is partially disposed in the abutting portion accommodating portion 431 provided on the upper surface of the support portion base portion 142. An annular upper side support portion 432 and a lower side support are provided in the contact portion accommodating portion 431. The portion 433 supports the abutting portion 43 so as to be movable in the vertical direction by the upper and lower support portions 432 and 433. The lower end portion of the abutting portion 43 is disposed in the inner space 143 formed in the base portion 142 of the support portion. A rod 44 is disposed in the internal space 143, and one end of the rod 44 is connected to the lower end portion of the abutting portion 43 via a pin 421. The rod 44 is formed with a long hole 441 extending in the longitudinal direction of the rod 44, and the pin 421 is inserted into the long hole 441. The rod 44 is rotatably supported centering on the rotation axis of the paper surface of FIG. 3 by the rod support portion 440 provided in the internal space 143.

桿44之另一端部經由銷422連接於大致沿上下方向之另一個桿45之下端部。於桿45形成有沿桿45之長邊方向延伸之長孔451,銷422係插入長孔451。於支撐部基部142之上表面設置有與內部空間143連絡之連絡孔145,桿45係插入連絡孔145。桿45係藉由固定於連絡孔145周圍之桿支撐部450,以垂直於圖3之紙面之旋轉軸為中心而可旋轉地支撐。於桿45上,較桿支撐部450靠上側之部分係配置於支撐部基部142之內部空間143之外側,其周圍由大致筒狀之波紋管423所覆蓋。於桿45之上端部安裝有爪部41。波紋管423係由不使氣體或液體通過之材料形成。波紋管423與爪部41之連接部、波紋管423與桿支撐部450之連接部、桿支撐部450與支撐部基部142之連接部、及抵接部收容部431與支撐部基部142之連接部被密封,防止氣體或液體之通過。 The other end of the rod 44 is connected via a pin 422 to the lower end of the other rod 45 substantially in the up and down direction. The rod 45 is formed with an elongated hole 451 extending in the longitudinal direction of the rod 45, and the pin 422 is inserted into the long hole 451. A contact hole 145 is formed on the upper surface of the support base 142 to communicate with the internal space 143, and the rod 45 is inserted into the contact hole 145. The rod 45 is rotatably supported centering on the rotation axis of the paper surface of Fig. 3 by a rod supporting portion 450 fixed around the coupling hole 145. The rod 45 is disposed on the outer side of the inner space 143 of the support base 142 on the upper side of the rod support portion 450, and is surrounded by a substantially cylindrical bellows 423. A claw portion 41 is attached to an upper end portion of the rod 45. The bellows 423 is formed of a material that does not allow gas or liquid to pass therethrough. The connection portion between the bellows 423 and the claw portion 41, the connection portion between the bellows 423 and the rod support portion 450, the connection portion between the rod support portion 450 and the support portion base portion 142, and the connection between the abutment portion accommodation portion 431 and the support portion base portion 142 The part is sealed to prevent the passage of gas or liquid.

於抵接部43安裝有以抵接部43為中心之圓板部434。圓板部434係於抵接部收容部431內配置於上側支撐部432與下側支撐部433之間。於圓板部434與下側支撐部433之間設置有圍繞抵接部43之周圍之彈簧435。藉由彈簧435朝上方對圓板部434及抵接部43賦予勢能,如圖3般使圓板部434與上側支撐部 432之下面抵接。於圓板部434與上側支撐部432之下面抵接之狀態下,桿44之桿45側之端部係較抵接部43側之端部位於下側,桿45沿上下方向大致直立。藉此,爪部41配置於自基板9之邊緣朝外側(與中心軸J1相反側)分離之位置。於抵接部43之一部分(也可為全部)設置有由橡膠等形成之彈性構件436,抵接部43係於長邊方向可略微伸縮。傳遞機構42所包括之上述構成係相對於複數個爪部41之各個而設置。 A disc portion 434 centering on the abutting portion 43 is attached to the abutting portion 43. The disc portion 434 is disposed between the upper support portion 432 and the lower support portion 433 in the contact portion accommodating portion 431. A spring 435 surrounding the periphery of the abutting portion 43 is provided between the disc portion 434 and the lower side support portion 433. The spring plate 435 is biased upward to impart potential energy to the disc portion 434 and the abutting portion 43, and the disc portion 434 and the upper support portion are formed as shown in FIG. Abutted below 432. In a state in which the disk portion 434 is in contact with the lower surface of the upper support portion 432, the end portion of the rod 44 on the rod 45 side is located on the lower side of the end portion on the side of the abutting portion 43, and the rod 45 is substantially erected in the vertical direction. Thereby, the claw portion 41 is disposed at a position separated from the edge of the substrate 9 toward the outside (the side opposite to the central axis J1). An elastic member 436 formed of rubber or the like is provided in one part (may be all) of the abutting portion 43, and the abutting portion 43 is slightly stretchable in the longitudinal direction. The above-described configuration included in the transmission mechanism 42 is provided for each of the plurality of claw portions 41.

圖4為顯示基板處理裝置1中之基板9之處理流程之圖。基板處理裝置1中,如圖1所示,於腔室蓋部122自腔室本體121分離而位於上方,且杯部161自腔室蓋部122分離而位於下方之狀態下,藉由外部之搬送機構將基板9搬入處理腔室12內,且藉由基板支撐部141自下側支撐(步驟S10)。以下,稱圖1所示之處理腔室12及杯部161之狀態為「開放狀態」。腔室蓋部122與腔室側壁部214之間之開口,係以中心軸J1為中心之環狀,以下稱為「環狀開口81」。基板處理裝置1中,藉由腔室蓋部122自腔室本體121分離,而於基板9之周圍(亦即,徑向外側)形成環狀開口81。於步驟S10中,基板9係經由環狀開口81搬入。 4 is a view showing a processing flow of the substrate 9 in the substrate processing apparatus 1. In the substrate processing apparatus 1, as shown in FIG. 1, the chamber cover portion 122 is separated from the chamber body 121 and positioned upward, and the cup portion 161 is separated from the chamber cover portion 122 and is positioned below, by the outside. The transport mechanism carries the substrate 9 into the processing chamber 12, and is supported by the substrate supporting portion 141 from the lower side (step S10). Hereinafter, the state of the processing chamber 12 and the cup portion 161 shown in Fig. 1 is referred to as "open state". The opening between the chamber cover portion 122 and the chamber side wall portion 214 is an annular shape centering on the central axis J1, and is hereinafter referred to as "annular opening 81". In the substrate processing apparatus 1, the chamber cover portion 122 is separated from the chamber body 121, and an annular opening 81 is formed around the substrate 9 (that is, radially outward). In step S10, the substrate 9 is carried in through the annular opening 81.

若搬入基板9,則腔室蓋部122藉由腔室開閉機構131而自圖1所示之位置下降至圖5所示之位置(靠近腔室本體121之位置)。此外,杯部161自圖1所示之位置上昇至圖5所示之位置,且位於環狀開口81之徑向外側全周。以下之說明中,稱圖5所示之處理腔室12及杯部161之狀態為「第1密閉狀態」。此外,稱圖5所示之杯部161之位置為「液接取位置」,稱圖1所示之杯部161之位置為「退避位置」。杯部移動機構162係使杯部161於環狀開 口81之徑向外側之液接取位置與較液接取位置下方之退避位置之間沿上下方向移動。 When the substrate 9 is carried in, the chamber lid portion 122 is lowered from the position shown in FIG. 1 to the position shown in FIG. 5 (a position close to the chamber body 121) by the chamber opening and closing mechanism 131. Further, the cup portion 161 is raised from the position shown in FIG. 1 to the position shown in FIG. 5, and is located on the radially outer side of the annular opening 81 over the entire circumference. In the following description, the state of the processing chamber 12 and the cup portion 161 shown in Fig. 5 is referred to as "first sealed state". Further, the position of the cup portion 161 shown in Fig. 5 is referred to as "liquid picking position", and the position of the cup portion 161 shown in Fig. 1 is referred to as "retracted position". The cup moving mechanism 162 causes the cup portion 161 to open in a ring shape The liquid contact position on the radially outer side of the port 81 moves in the up and down direction between the retracted position below the liquid contact position.

於位於液接取位置之杯部161中,側壁部611係在徑向上與環狀開口81對向。此外,上表面部612之外緣部之上表面,接合於腔室蓋部122之外緣部下端之唇封(lip seal)232全周。於腔室蓋部122與杯部161之上表面部612之間形成有防止氣體或液體通過之密封部。藉此,形成有藉由腔室本體121、腔室蓋部122、杯部161、及杯對向部163所包圍之密閉的空間(以下稱為「擴大密閉空間100」)。擴大密閉空間100係藉由經由環狀開口81將腔室蓋部122及腔室本體121之間的腔室空間120、與杯部161及杯對向部163所包圍之側面空間160連通而形成之一個空間。 In the cup portion 161 located at the liquid pick-up position, the side wall portion 611 is opposed to the annular opening 81 in the radial direction. Further, the upper surface of the outer edge portion of the upper surface portion 612 is joined to the lip seal 232 at the lower end of the outer edge portion of the chamber cover portion 122 over the entire circumference. A seal portion that prevents passage of gas or liquid is formed between the chamber cover portion 122 and the upper surface portion 612 of the cup portion 161. Thereby, a sealed space (hereinafter referred to as "enlarged sealed space 100") surrounded by the chamber body 121, the chamber cover portion 122, the cup portion 161, and the cup opposing portion 163 is formed. The enlarged sealed space 100 is formed by communicating the chamber space 120 between the chamber cover portion 122 and the chamber body 121 via the annular opening 81 with the side space 160 surrounded by the cup portion 161 and the cup opposing portion 163. One space.

此外,於第1密閉狀態下,如圖6所示,於頂板123之各卡合部241之下部之凹部242嵌入自抵接部收容部431朝上方突出之抵接部43之上端部。藉此,頂板123與基板支撐部141之支撐部基部142連接。換言之,頂板123之相對於基板支撐部141之旋轉方向(圓周方向)上之相對位置被固定。以下之說明中,稱頂板123與基板支撐部141連結之位置為「連結位置」。當腔室蓋部122下降時,藉由基板旋轉機構15控制支撐部基部142之旋轉位置,以使卡合部241與抵接部43嵌合。實際上,於各抵接部43之上端面、及與該上端面對向之卡合部241之凹部242內之面設置有磁鐵437、243,藉由作用於這些磁鐵437、243之間的磁力(引力),牢固地將卡合部241與抵接部43結合。 Further, in the first sealed state, as shown in FIG. 6, the concave portion 242 at the lower portion of each of the engaging portions 241 of the top plate 123 is fitted to the upper end portion of the abutting portion 43 that protrudes upward from the abutting portion accommodating portion 431. Thereby, the top plate 123 is connected to the support base 142 of the substrate supporting portion 141. In other words, the relative position of the top plate 123 with respect to the rotation direction (circumferential direction) of the substrate supporting portion 141 is fixed. In the following description, the position at which the top plate 123 and the substrate supporting portion 141 are coupled is referred to as a "connection position". When the chamber cover portion 122 is lowered, the rotation position of the support portion base portion 142 is controlled by the substrate rotation mechanism 15 so that the engagement portion 241 and the abutment portion 43 are fitted. Actually, the magnets 437 and 243 are provided on the surface of the upper end surface of each of the abutting portions 43 and the concave portion 242 of the engaging portion 241 opposed to the upper end surface, and act between the magnets 437 and 243. The magnetic force (gravity) firmly bonds the engaging portion 241 and the abutting portion 43.

此時,如圖5所示,被支撐部237之凸緣部239係朝板支撐部222之凸緣部224之上方分離,板支撐部222與被支撐部 237不接觸。換言之,解除了藉由板支撐部222對頂板123之支撐、即腔室開閉機構131之間接的對頂板123之支撐。因此,頂板123自腔室蓋部122獨立,且藉由基板旋轉機構15可與基板保持部14及保持於基板保持部14之基板9一起進行旋轉。 At this time, as shown in FIG. 5, the flange portion 239 of the supported portion 237 is separated above the flange portion 224 of the plate supporting portion 222, and the plate supporting portion 222 and the supported portion are separated. 237 does not touch. In other words, the support of the top plate 123 by the support of the top plate 123 by the plate supporting portion 222, that is, the chamber opening and closing mechanism 131 is released. Therefore, the top plate 123 is independent of the chamber cover portion 122, and is rotatable together with the substrate holding portion 14 and the substrate 9 held by the substrate holding portion 14 by the substrate rotating mechanism 15.

如圖6所示,迄卡合部241之下面與抵接部收容部431之上表面抵接為止,藉由頂板123之自重將抵接部43朝下方壓入。桿44之桿45側之一端朝較抵接部43側之端部更上側移動,於是桿45傾斜而使桿45之上端部靠近基板9。藉此,爪部41抵接於支撐銷144上之基板9之邊緣(側面),且藉由爪部41朝中心軸J1按壓該邊緣。實際上,作用於複數個抵接部43之力分別傳遞至複數個爪部41,且藉由排列配置於圓周方向之複數個爪部41以大致相同之力朝中心軸J1按壓基板9之邊緣之不同部位。其結果,可一方面將基板9之中心配置於中心軸J1上,一方面藉由卡盤部4牢固地保持基板9(步驟S11)。即使於由基板支撐部141所支撐之基板9之大小(直徑)變動之情況下,仍藉由抵接部43之彈性構件436之伸縮量變化,以使卡合部241之下面與抵接部收容部431之上表面抵接。因此,頂板123之下面與基板9之上表面91之間的上下方向之距離保持一定。 As shown in FIG. 6, the lower surface of the abutting portion 241 abuts against the upper surface of the abutting portion accommodating portion 431, and the abutting portion 43 is pushed downward by the weight of the top plate 123. One end of the rod 45 side of the rod 44 moves to the upper side of the end portion on the side closer to the abutting portion 43, so that the rod 45 is inclined so that the upper end portion of the rod 45 is close to the substrate 9. Thereby, the claw portion 41 abuts against the edge (side surface) of the substrate 9 on the support pin 144, and the edge is pressed by the claw portion 41 toward the central axis J1. Actually, the force acting on the plurality of abutting portions 43 is transmitted to the plurality of claw portions 41, respectively, and the edges of the substrate 9 are pressed toward the central axis J1 by substantially the same force by a plurality of claw portions 41 arranged in the circumferential direction. Different parts. As a result, the center of the substrate 9 can be placed on the central axis J1, and the substrate 9 can be firmly held by the chuck portion 4 (step S11). Even when the size (diameter) of the substrate 9 supported by the substrate supporting portion 141 fluctuates, the amount of expansion and contraction of the elastic member 436 by the abutting portion 43 is changed so that the lower surface of the engaging portion 241 and the abutting portion are formed. The upper surface of the accommodating portion 431 abuts. Therefore, the distance between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9 is kept constant.

若保持了基板9,藉由圖5所示之基板旋轉機構15按一定轉速(較低之轉速,以下稱為「穩態轉速」。)開始基板9的旋轉。此外,自惰性氣體供給部186(參照圖2)開始朝擴大密閉空間100供給惰性氣體(在此為氮氣),並藉由外側排氣部194開始進行擴大密閉空間100內之氣體的排出。藉此,於經過既定時間後,擴大密閉空間100成為填充有惰性氣體之惰性氣體填充狀態(亦即, 氧濃度低之低氧環境氣體)。再者,朝擴大密閉空間100之惰性氣體之供給及擴大密閉空間100內之氣體之排出,也可自圖1所示之開放狀態進行。 When the substrate 9 is held, the substrate rotation mechanism 15 shown in FIG. 5 starts the rotation of the substrate 9 at a constant rotation speed (lower rotation speed, hereinafter referred to as "steady-state rotation speed"). Further, the inert gas supply unit 186 (see FIG. 2) starts to supply an inert gas (here, nitrogen gas) to the enlarged sealed space 100, and the outer exhaust portion 194 starts to expand the gas in the sealed space 100. Thereby, after a predetermined period of time, the sealed space 100 is expanded to be filled with an inert gas filled with an inert gas (ie, Low oxygen environment gas with low oxygen concentration). Further, the supply of the inert gas in the expanded space 100 and the expansion of the gas in the sealed space 100 may be performed in an open state as shown in FIG.

接著,自複數個加熱氣體供給噴嘴180朝旋轉之基板9之下面92噴出加熱後之氣體。藉此,基板9被加熱。然後,自上部噴嘴181朝基板9之上表面91之中央部開始供給藥液(步驟S12)。來自上部噴嘴181之藥液被連續地供給於旋轉之基板9之上表面91。上表面91上之藥液藉由基板9之旋轉朝基板9之外周部擴散,使得上表面91整體藉由藥液所被覆。 Next, the heated gas is supplied from the plurality of heated gas supply nozzles 180 toward the lower surface 92 of the rotating substrate 9. Thereby, the substrate 9 is heated. Then, the supply of the chemical liquid is started from the upper nozzle 181 toward the central portion of the upper surface 91 of the substrate 9 (step S12). The chemical liquid from the upper nozzle 181 is continuously supplied to the upper surface 91 of the rotating substrate 9. The chemical solution on the upper surface 91 is diffused toward the outer periphery of the substrate 9 by the rotation of the substrate 9, so that the upper surface 91 as a whole is covered by the chemical liquid.

於來自之上部噴嘴181之藥液之供給中,來自加熱氣體供給噴嘴180之加熱氣體之噴出仍繼續噴出。藉此,一方面以大致所需之溫度均勻地將基板9加熱,一方面藉由藥液對上表面91進行蝕刻。其結果,可提高對基板9之藥液處理之均勻性。於自上部噴嘴181供給藥液時,位於連結位置之頂板123之下面,係於基板9之上方以覆蓋基板9之方式沿基板9之上表面91擴展,且靠近基板9之上表面91。如此,藉由藥液對基板9之處理,係於頂板123之下面與基板9之上表面91之間的極窄之空間中進行。藉此,可更加提高對基板9之藥液處理之均勻性。 In the supply of the chemical liquid from the upper nozzle 181, the discharge of the heated gas from the heated gas supply nozzle 180 continues to be ejected. Thereby, on the one hand, the substrate 9 is uniformly heated at a temperature which is substantially required, and on the other hand, the upper surface 91 is etched by the chemical liquid. As a result, the uniformity of the chemical treatment of the substrate 9 can be improved. When the chemical liquid is supplied from the upper nozzle 181, the lower surface of the top plate 123 at the joint position extends above the substrate 9 so as to cover the substrate 9 along the upper surface 91 of the substrate 9, and is close to the upper surface 91 of the substrate 9. Thus, the treatment of the substrate 9 by the chemical solution is performed in a very narrow space between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9. Thereby, the uniformity of the chemical treatment of the substrate 9 can be further improved.

於擴大密閉空間100中,自旋轉之基板9之上表面91飛散之藥液,經由環狀開口81被杯部161所接取,並導向液接取凹部165。朝液接取凹部165引導之藥液經由圖2所示之第1排出流路191流入氣液分離部193。於藥液回收部195中,自氣液分離部193回收藥液,且經由過濾器等自藥液中除去雜質等後,被再利用。 In the enlarged sealed space 100, the chemical liquid scattered on the upper surface 91 of the substrate 9 that has been rotated is picked up by the cup portion 161 via the annular opening 81, and guided to the liquid take-up recess 165. The chemical solution guided to the liquid receiving recess 165 flows into the gas-liquid separating portion 193 via the first discharge flow path 191 shown in FIG. 2 . In the chemical liquid recovery unit 195, the chemical liquid is recovered from the gas-liquid separation unit 193, and impurities and the like are removed from the chemical liquid through a filter or the like, and then reused.

若自來自上部噴嘴181之藥液之供給開始經過了既定時間(例如,60~120秒),則停止來自上部噴嘴181之藥液之供給、及停止來自加熱氣體供給噴嘴180之加熱氣體之供給。接著,藉由基板旋轉機構15使基板9之轉速高於穩態轉速達既定時間(例如,1~3秒),自基板9除去藥液。 When the supply of the chemical liquid from the upper nozzle 181 has elapsed for a predetermined period of time (for example, 60 to 120 seconds), the supply of the chemical liquid from the upper nozzle 181 is stopped, and the supply of the heated gas from the heating gas supply nozzle 180 is stopped. . Next, the substrate rotation mechanism 15 causes the rotation speed of the substrate 9 to be higher than the steady-state rotation speed for a predetermined time (for example, 1 to 3 seconds), and the chemical liquid is removed from the substrate 9.

接著,腔室蓋部122及杯部161同步朝下方移動。然後,如圖7所示,藉由腔室蓋部122之外緣部下端之唇封231與腔室側壁部214之上部接觸而將環狀開口81關閉,在與側面空間160隔絕之狀態下將腔室空間120密閉。杯部161與圖1同樣地位於退避位置。以下,稱圖7所示之處理腔室12及杯部161之狀態為「第2密閉狀態」。於第2密閉狀態下,基板9係與處理腔室12之內壁直接對向,且於這些之間不存在其他之液接取部。 Next, the chamber cover portion 122 and the cup portion 161 move in synchronization downward. Then, as shown in FIG. 7, the annular opening 81 is closed by the lip seal 231 at the lower end of the outer edge portion of the outer peripheral portion of the chamber cover portion 122 in contact with the upper portion of the chamber side wall portion 214, in a state of being isolated from the side space 160. The chamber space 120 is sealed. The cup portion 161 is located at the retracted position as in the case of Fig. 1 . Hereinafter, the state of the processing chamber 12 and the cup portion 161 shown in Fig. 7 is referred to as "second sealed state". In the second sealed state, the substrate 9 is directly opposed to the inner wall of the processing chamber 12, and there is no other liquid receiving portion between them.

於第2密閉狀態下,也與第1密閉狀態同樣地,藉由卡盤部4之複數個爪部41朝中心軸J1按壓基板9之邊緣,牢固地保持基板9。此外,解除了藉由板支撐部222對頂板123之保持,頂板123自腔室蓋部122獨立,與基板保持部14及基板9一起進行旋轉。 In the second sealed state, similarly to the first sealed state, the plurality of claw portions 41 of the chuck portion 4 press the edge of the substrate 9 toward the central axis J1 to firmly hold the substrate 9. Further, the holding of the top plate 123 by the plate supporting portion 222 is released, and the top plate 123 is rotated independently from the chamber cover portion 122 together with the substrate holding portion 14 and the substrate 9.

若腔室空間120被密閉,則停止藉由外側排氣部194(參照圖2)進行之氣體之排出,並開始藉由內側排氣部198進行之腔室空間120內之氣體之排出。然後,藉由純水供給部184開始朝基板9之純水之供給(步驟S13)。 When the chamber space 120 is sealed, the discharge of the gas by the outer exhaust portion 194 (see FIG. 2) is stopped, and the discharge of the gas in the chamber space 120 by the inner exhaust portion 198 is started. Then, the supply of pure water to the substrate 9 is started by the pure water supply unit 184 (step S13).

來自純水供給部184之純水,自上部噴嘴181連續地供給於基板9之上表面91之中央部。此外,來自純水供給部184之純水,自下部噴嘴182連續地供給於基板9之下面92之中央部。 自上部噴嘴181及下部噴嘴182吐出之純水,係作為洗淨液供給於基板9。 The pure water from the pure water supply unit 184 is continuously supplied from the upper nozzle 181 to the central portion of the upper surface 91 of the substrate 9. Further, the pure water from the pure water supply unit 184 is continuously supplied from the lower nozzle 182 to the central portion of the lower surface 92 of the substrate 9. The pure water discharged from the upper nozzle 181 and the lower nozzle 182 is supplied to the substrate 9 as a cleaning liquid.

純水藉由基板9之旋轉朝上表面91及下面92之外周部擴散,並自基板9之外周緣朝徑向外側飛散。自基板9飛散之純水,於處理腔室12之內壁(亦即,腔室蓋部122及腔室側壁部214之內壁)被接取,並經由圖2所示之第2排出流路192、氣液分離部197及排液部199被廢棄(於後述之基板9之乾燥處理中也同樣)。藉此,於腔室空間120中,與藉由純水對基板9之洗淨處理一起,實質上還進行處理腔室12內之洗淨。實際上,自基板9飛散之純水之一部分,於處理腔室12之內壁朝中心軸J1側彈回,但基板9之上表面91藉由頂板123所覆蓋,藉此,防止來自處理腔室12之內壁之純水附著於基板9之上表面91。 The pure water is diffused toward the outer peripheral portion of the upper surface 91 and the lower surface 92 by the rotation of the substrate 9, and is scattered radially outward from the outer periphery of the substrate 9. The pure water scattered from the substrate 9 is taken up on the inner wall of the processing chamber 12 (i.e., the inner wall of the chamber cover portion 122 and the chamber side wall portion 214), and is passed through the second discharge flow shown in FIG. The path 192, the gas-liquid separation unit 197, and the liquid discharge unit 199 are discarded (the same applies to the drying process of the substrate 9 to be described later). Thereby, in the chamber space 120, the cleaning in the processing chamber 12 is substantially performed together with the cleaning treatment of the substrate 9 by pure water. In fact, a portion of the pure water scattered from the substrate 9 bounces back toward the central axis J1 side on the inner wall of the processing chamber 12, but the upper surface 91 of the substrate 9 is covered by the top plate 123, thereby preventing from the processing chamber The pure water of the inner wall of the chamber 12 is attached to the upper surface 91 of the substrate 9.

若自純水之供給開始經過了既定時間,則停止來自純水供給部184之純水之供給。然後,自複數個加熱氣體供給噴嘴180朝基板9之下面92噴出加熱之氣體。藉此,基板9被加熱。並且,於繼續來自加熱氣體供給噴嘴180之加熱氣體之噴出之狀態下,將基板9之轉速提高至充分高於穩態轉速。藉此,藉由自基板9上除去純水,進行基板9之乾燥處理(步驟S14)。若自基板9之乾燥開始後經過既定時間,則停止基板9之旋轉。再者,也可於基板9之乾燥處理前,自上部噴嘴181朝基板9之上表面91供給IPA,於上表面91上將純水置換為IPA。此外,基板9之乾燥處理,也可於藉由內側排氣部198對腔室空間120進行減壓而低於大氣壓之減壓環境氣體下進行。 When the predetermined time has elapsed since the supply of the pure water has started, the supply of the pure water from the pure water supply unit 184 is stopped. Then, the heated gas is ejected from the plurality of heating gas supply nozzles 180 toward the lower surface 92 of the substrate 9. Thereby, the substrate 9 is heated. Further, in a state where the discharge of the heating gas from the heating gas supply nozzle 180 is continued, the rotation speed of the substrate 9 is increased sufficiently higher than the steady-state rotation speed. Thereby, the drying process of the substrate 9 is performed by removing pure water from the substrate 9 (step S14). When a predetermined time elapses from the start of drying of the substrate 9, the rotation of the substrate 9 is stopped. Further, before the drying process of the substrate 9, the IPA may be supplied from the upper nozzle 181 toward the upper surface 91 of the substrate 9, and the pure water may be replaced with IPA on the upper surface 91. Further, the drying process of the substrate 9 may be performed under reduced pressure ambient gas which is decompressed by the inner exhaust portion 198 to reduce the chamber space 120 to below atmospheric pressure.

其後,藉由腔室蓋部122上昇,如圖1所示,處理腔 室12成為開放狀態,頂板123相對於基板支撐部141配置於分離位置。於步驟S14中,由於頂板123與基板支撐部141一起旋轉,因此於頂板123之下面幾乎不殘留液體,從而於腔室蓋部122之上昇時,無液體自頂板123落下於基板9上。 Thereafter, the chamber cover portion 122 is raised, as shown in FIG. The chamber 12 is in an open state, and the top plate 123 is disposed at a separated position with respect to the substrate supporting portion 141. In step S14, since the top plate 123 rotates together with the substrate supporting portion 141, almost no liquid remains on the lower surface of the top plate 123, so that no liquid is dropped from the top plate 123 on the substrate 9 when the chamber cover portion 122 is raised.

於頂板123配置於分離位置之狀態下,卡合部241與圖3所示之抵接部43於上下方向分離,抵接部43藉由彈簧435所賦予之勢能而被配置於圖3所示之位置。藉此,桿45沿上下方向大致直立,爪部41自基板9之邊緣朝外側(與中心軸J1相反側)分離。亦即,解除藉由卡盤部4對基板9之保持(步驟S15)。其後,基板9係藉由外部之搬送機構自處理腔室12搬出(步驟S16),完成藉由基板處理裝置1對基板9之處理。實際上,上述步驟S10~S16之處理係對於其他之基板9重複地進行。 In a state where the top plate 123 is disposed at the separated position, the engaging portion 241 is separated from the abutting portion 43 shown in FIG. 3 in the vertical direction, and the abutting portion 43 is disposed by the potential energy given by the spring 435 as shown in FIG. The location. Thereby, the rod 45 is substantially erected in the up-and-down direction, and the claw portion 41 is separated from the edge of the substrate 9 toward the outside (the side opposite to the central axis J1). That is, the holding of the substrate 9 by the chuck portion 4 is released (step S15). Thereafter, the substrate 9 is carried out from the processing chamber 12 by an external transfer mechanism (step S16), and the substrate 9 is processed by the substrate processing apparatus 1. Actually, the processing of the above steps S10 to S16 is repeatedly performed for the other substrates 9.

圖8為顯示比較例之基板處理裝置中之基板保持部附近之剖視圖。比較例之基板處理裝置中,基板保持部95具備:自下側支撐基板9之外緣部之大致圓環狀之基板支撐部96;及自上側按壓支撐於基板支撐部96之基板9之外緣部之基板按壓部97。基板支撐部96具備大致圓環板狀之支撐部基部960及固定於支撐部基部960之上表面之複數個第1接觸部961,且複數個第1接觸部961係於圓周方向排列配置。基板按壓部97具備固定於頂板123之下面之複數個第2接觸部971,且複數個第2接觸部971係於圓周方向排列配置。於頂板123之外緣部之下面沿圓周方向排列配置有複數個卡合部951,於支撐部基部960之上表面沿圓周方向排列配置有複數個卡合銷952。若頂板123配置於連結位置,則卡合部951與卡合銷952嵌合,頂板123與基板支撐部96連結。於比較例 之基板處理裝置中,基板按壓部97藉由頂板123之自重朝基板支撐部96側按壓基板9,以基板按壓部97與基板支撐部96上下挾持基板9。 8 is a cross-sectional view showing the vicinity of a substrate holding portion in a substrate processing apparatus of a comparative example. In the substrate processing apparatus of the comparative example, the substrate holding portion 95 includes a substantially annular substrate supporting portion 96 from the outer edge portion of the lower supporting substrate 9 and a substrate 9 supported by the substrate supporting portion 96 from the upper side. The substrate pressing portion 97 of the edge portion. The substrate supporting portion 96 includes a substantially annular plate-shaped supporting portion base portion 960 and a plurality of first contact portions 961 fixed to the upper surface of the supporting portion base portion 960, and a plurality of first contact portions 961 are arranged in the circumferential direction. The substrate pressing portion 97 includes a plurality of second contact portions 971 fixed to the lower surface of the top plate 123, and a plurality of second contact portions 971 are arranged in the circumferential direction. A plurality of engaging portions 951 are arranged in the circumferential direction on the lower surface of the outer edge portion of the top plate 123, and a plurality of engaging pins 952 are arranged in the circumferential direction on the upper surface of the supporting portion base portion 960. When the top plate 123 is disposed at the connection position, the engagement portion 951 is fitted to the engagement pin 952, and the top plate 123 is coupled to the substrate support portion 96. In the comparative example In the substrate processing apparatus, the substrate pressing portion 97 presses the substrate 9 toward the substrate supporting portion 96 by the weight of the top plate 123, and the substrate pressing portion 97 and the substrate supporting portion 96 sandwich the substrate 9 up and down.

然而,於基板處理裝置中,因基板9之彎曲或製造誤差等,搬入之基板9的直徑略有變動。為了應對此種變動,於比較例之基板處理裝置中,配合SEMI(Semiconductor Equipment and Materials International)規格中之最大直徑的基板9,決定支撐部基部960之複數個第1接觸部961之位置及形狀、暨頂板123中之複數個第2接觸部971之位置及形狀。因此,於比較例之基板處理裝置中,若搬入較上述規格中之最大直徑小之直徑之基板9,於對該基板9之處理液之供給時、或基板9之旋轉之加減速時等,有時會有基板支撐部96上之基板9之位置變動(亦即,基板9略微移動)。於該情況下,基板9與接觸部961、971相擦而產生污染物,或者產生接觸部961、971之磨耗。此外,若基板9之位置變動較大,則恐有基板9破損之虞。再者,於比較例之基板處理裝置中,第1接觸部961之端面係調芯用之傾斜面,但即使設置此種傾斜面,也不保證一定能精度良好地對基板9進行調芯。 However, in the substrate processing apparatus, the diameter of the substrate 9 loaded therein slightly changes due to the bending of the substrate 9, the manufacturing error, and the like. In order to cope with such a change, in the substrate processing apparatus of the comparative example, the position and shape of the plurality of first contact portions 961 of the support portion base portion 960 are determined in accordance with the substrate 9 having the largest diameter in the SEMI (Semiconductor Equipment and Materials International) standard. And the position and shape of the plurality of second contact portions 971 in the top plate 123. Therefore, in the substrate processing apparatus of the comparative example, when the substrate 9 having a smaller diameter than the largest diameter in the above specification is loaded, when the processing liquid of the substrate 9 is supplied, or when the substrate 9 is rotated or decelerated, There is a case where the position of the substrate 9 on the substrate supporting portion 96 is changed (that is, the substrate 9 is slightly moved). In this case, the substrate 9 is rubbed against the contact portions 961, 971 to generate contaminants or to cause abrasion of the contact portions 961, 971. Further, if the position of the substrate 9 fluctuates greatly, the substrate 9 may be damaged. Further, in the substrate processing apparatus of the comparative example, the end surface of the first contact portion 961 is an inclined surface for alignment, but even if such an inclined surface is provided, it is not guaranteed that the substrate 9 can be accurately aligned.

相對於此,於基板處理裝置1中,於基板支撐部141設置具有複數個爪部41及傳遞機構42之卡盤部4,當頂板123位於連結位置時,藉由頂板123之自重,於上下方向將傳遞機構42之各底接部43壓入。傳遞機構42藉由將作用於各抵接部43之力傳遞至對應之爪部41,使複數個爪部41朝中心軸J1按壓基板9之邊緣。藉此,即使於搬入之基板9之直徑變動之情況下,仍可實現利用配置於連結位置之頂板123之自重,藉由複數個爪部41自外 側對基板9之保持。其結果,於對基板9之處理液之供給時、或基板9之旋轉之加減速時等,可抑制基板支撐部141上之基板9之位置變動,還可防止基板9之破損。此外,藉由複數個爪部41將基板9之中心配置於中心軸J1、亦即使基板9相對於旋轉中心進行對位,藉此,可將包含基板9、基板支撐部141及頂板123之旋轉體之重心配置於中心軸J1之附近(取得平衡),從而可穩定地旋轉旋轉體。 On the other hand, in the substrate processing apparatus 1, the chuck portion 4 having the plurality of claw portions 41 and the transmission mechanism 42 is provided in the substrate supporting portion 141, and when the top plate 123 is at the coupling position, the weight of the top plate 123 is up and down. The direction presses the bottom portions 43 of the transmission mechanism 42 into place. The transmission mechanism 42 transmits the force acting on each of the abutting portions 43 to the corresponding claw portion 41, and the plurality of claw portions 41 press the edge of the substrate 9 toward the central axis J1. Thereby, even when the diameter of the substrate 9 to be loaded is changed, the self-weight of the top plate 123 disposed at the joint position can be realized, and the plurality of claws 41 are externally The side is held against the substrate 9. As a result, the positional variation of the substrate 9 on the substrate supporting portion 141 can be suppressed during the supply of the processing liquid to the substrate 9, or during the acceleration/deceleration of the rotation of the substrate 9, and the substrate 9 can be prevented from being damaged. Further, by arranging the center of the substrate 9 on the central axis J1 by the plurality of claw portions 41, even if the substrate 9 is aligned with respect to the rotation center, the rotation of the substrate including the substrate 9, the substrate supporting portion 141, and the top plate 123 can be performed. The center of gravity of the body is disposed in the vicinity of the center axis J1 (balanced), so that the rotating body can be stably rotated.

此外,配置於連結位置之頂板123靠近基板9之上表面91而將上表面91覆蓋。藉此,於朝旋轉之基板9供給處理液之處理中,可防止自基板9之外緣部飛散之處理液於處理腔室12之內壁彈回而再度附著於基板9之上表面91。進而,於基板保持部14中,傳遞機構42包含彈性構件436,於基板支撐部141所支撐之基板9之大小變動之情況下,彈性構件436彈性變形。藉此,可將連結位置上之頂板123與基板9之間的距離保持一定。其結果,即使於基板9之大小變動之情況下,也可以一定之條件對基板9實施處理。 Further, the top plate 123 disposed at the joint position is close to the upper surface 91 of the substrate 9 to cover the upper surface 91. Thereby, in the process of supplying the processing liquid to the substrate 9 that is rotated, the processing liquid scattered from the outer edge portion of the substrate 9 can be prevented from rebounding on the inner wall of the processing chamber 12 and reattached to the upper surface 91 of the substrate 9. Further, in the substrate holding portion 14, the transmission mechanism 42 includes the elastic member 436, and the elastic member 436 is elastically deformed when the size of the substrate 9 supported by the substrate supporting portion 141 is changed. Thereby, the distance between the top plate 123 and the substrate 9 at the joint position can be kept constant. As a result, even when the size of the substrate 9 fluctuates, the substrate 9 can be processed under certain conditions.

於基板處理裝置1中,基板旋轉機構15具備以中心軸J1為中心之環狀之轉子部152、及間隔間隙於徑向與轉子部152對向之環狀之定子部151。並且,基板支撐部141連接於轉子部152,基板支撐部141及轉子部152係於處理腔室12內不與處理腔室12接觸而進行旋轉。如此,即使於無法對設於基板支撐部141之卡盤部4傳遞電氣或壓縮空氣等之動力源之驅動力之情況下,仍可於具有上述構造之基板處理裝置1中,使基板9相對於旋轉中心一方面進行對位一方面進行保持。 In the substrate processing apparatus 1, the substrate rotating mechanism 15 includes an annular rotor portion 152 centered on the central axis J1 and a stator portion 151 having an annular gap that is opposed to the rotor portion 152 in the radial direction. Further, the substrate supporting portion 141 is connected to the rotor portion 152, and the substrate supporting portion 141 and the rotor portion 152 are rotated in contact with the processing chamber 12 in the processing chamber 12. In this manner, even in the case where the driving force of the power source such as electric or compressed air is not transmitted to the chuck portion 4 of the substrate supporting portion 141, the substrate 9 can be made relatively in the substrate processing apparatus 1 having the above configuration. On the one hand, the alignment center is maintained on the one hand.

圖9為顯示卡盤部之另一例之圖。圖9之卡盤部4a之傳遞機構42a具備相對於各爪部41a而設之抵接部43及複數個軸46、47。抵接部43及抵接部收容部431之內部構造與圖3同樣。 Fig. 9 is a view showing another example of the chuck portion. The transmission mechanism 42a of the chuck portion 4a of Fig. 9 includes a contact portion 43 and a plurality of shafts 46, 47 provided for the respective claw portions 41a. The internal structure of the abutting portion 43 and the abutting portion accommodating portion 431 is the same as that of FIG.

圖10為顯示抵接部43及複數個軸46、47之立體圖。圖10中,為便於圖示,省略了其他構成要素之圖示。如圖9所示,於支撐部基部142之內部空間143配置有朝垂直於中心軸J1之方向(圖9之橫向)延伸之軸46。軸46係藉由一對軸支撐部460而以其中心軸J2為中心可旋轉地支撐。如圖10所示,於軸46之一端部固定有朝垂直於軸46之中心軸J2之方向延伸之桿461之一端部,桿461之另一端部經由銷424連接於抵接部43之下端部。於桿461形成有沿桿461之長邊方向延伸之長孔462,銷424係插入長孔462。 FIG. 10 is a perspective view showing the abutting portion 43 and the plurality of shafts 46, 47. In FIG. 10, illustration of other components is omitted for convenience of illustration. As shown in FIG. 9, the inner space 143 of the support base 142 is provided with a shaft 46 extending in a direction perpendicular to the central axis J1 (lateral direction of FIG. 9). The shaft 46 is rotatably supported around the central axis J2 by a pair of shaft support portions 460. As shown in FIG. 10, one end of the rod 461 extending in a direction perpendicular to the central axis J2 of the shaft 46 is fixed to one end of the shaft 46, and the other end of the rod 461 is connected to the lower end of the abutting portion 43 via a pin 424. unit. The rod 461 is formed with a long hole 462 extending in the longitudinal direction of the rod 461, and the pin 424 is inserted into the long hole 462.

如圖9所示,於支撐部基部142之內部空間143配置有上下方向延伸之另一根軸47之下部。軸47係藉由軸支撐部470而以其中心軸J3為中心可旋轉地支撐。如圖10所示,於軸46之另一端部固定有沿垂直於軸46之中心軸J2之方向延伸之桿463之一端部。桿463之另一端部係經由銷425連接於軸47之上部。於桿463形成有沿桿463之長邊方向延伸之長孔464,銷425係插入長孔464。 As shown in FIG. 9, the lower portion of the other shaft 47 extending in the vertical direction is disposed in the internal space 143 of the support portion base portion 142. The shaft 47 is rotatably supported around the central axis J3 by the shaft support portion 470. As shown in FIG. 10, one end of the rod 463 extending in the direction perpendicular to the central axis J2 of the shaft 46 is fixed to the other end of the shaft 46. The other end of the rod 463 is coupled to the upper portion of the shaft 47 via a pin 425. The rod 463 is formed with an elongated hole 464 extending in the longitudinal direction of the rod 463, and the pin 425 is inserted into the long hole 464.

圖11為顯示一個爪部41a之俯視圖,顯示沿上下方向所觀察之爪部41a。如圖9及圖11所示,爪部41a具有沿上下方向觀察之形狀為橢圓形之爪部本體411。爪部本體411之上表面412係自該橢圓形之長軸之一端朝另一端而高度逐漸減少之傾斜面。於爪部本體411之上表面412,且於高度最大之位置附近,設置有朝 上方突出之突出部413。突出部413係上部之直徑較下部之直徑大之倒圓錐梯形。爪部本體411係固定於有蓋圓筒狀之爪部支撐台410之上表面。 Fig. 11 is a plan view showing one claw portion 41a showing the claw portion 41a as viewed in the up and down direction. As shown in FIGS. 9 and 11, the claw portion 41a has a claw body 411 having an elliptical shape as viewed in the vertical direction. The upper surface 412 of the claw body 411 is an inclined surface whose height gradually decreases from one end of the long axis of the ellipse toward the other end. On the upper surface 412 of the claw body 411, and near the position of the highest height, A protruding portion 413 protruding upward. The protruding portion 413 is an inverted conical trapezoid having a diameter larger than that of the lower portion. The claw body 411 is fixed to the upper surface of the cap-shaped cylindrical support table 410.

於軸47中,除下部以外之部位係配置於支撐部基部142之內部空間143之外側,軸47之上端部係固定於爪部支撐台410之蓋部的下面。配置於內部空間143之外側之軸47之部位之周圍,係藉由爪部支撐台410之側壁部所包圍。爪部支撐台410之側壁部與支撐部基部142之連接部,係於兩者可滑動之狀態下被密閉。 In the shaft 47, the portion other than the lower portion is disposed on the outer side of the inner space 143 of the support portion base portion 142, and the upper end portion of the shaft 47 is fixed to the lower surface of the lid portion of the claw portion support base 410. The periphery of the portion of the shaft 47 disposed on the outer side of the inner space 143 is surrounded by the side wall portion of the claw support base 410. The connection portion between the side wall portion of the claw support base 410 and the support portion base portion 142 is sealed in a state where the both are slidable.

於頂板123配置於分離位置,且如圖9中二點鏈線所示,圓板部434藉由彈簧435所賦予之勢能而與上側支撐部432之下面抵接之狀態下,基板9之邊緣係於爪部本體411之上表面412上配置於自突出部413略微分離之位置。如圖9中實線所示,若藉由位於連結位置之頂板123之自重朝下方壓入抵接部43,則圖10所示之軸46以中心軸J2為中心進行轉動,軸47以中心軸J3為中心進行轉動。藉此,爪部本體411以中心軸J3為中心自圖11中二點鏈線所示之旋轉位置朝以實線所示之旋轉位置進行轉動,如圖9中實線所示,基板9略朝上方移動,並且突出部413之側面抵接於基板9之邊緣。換言之,基板9之外緣部咬入突出部413之側面與爪部本體411之上表面412所形成之凹部。實際上,作用於複數個抵接部43之力分別對沿基板9之外緣配置之複數個爪部41a進行傳遞,藉由複數個爪部41a以大致相同之力朝中心軸J1按壓基板9之邊緣之不同部位。如此,於圖9所示之卡盤部4a中,利用配置於連結位置之頂板123之重量,實現使基板9相對於旋轉中心一方面進行對位一方面進行保持。 The top plate 123 is disposed at the separated position, and as shown by the two-dot chain line in FIG. 9, the disk portion 434 is in contact with the lower surface of the upper side support portion 432 by the potential energy imparted by the spring 435, and the edge of the substrate 9 It is disposed on the upper surface 412 of the claw body 411 at a position slightly separated from the protruding portion 413. As shown by the solid line in Fig. 9, when the abutting portion 43 is pressed downward by the weight of the top plate 123 at the joint position, the shaft 46 shown in Fig. 10 is rotated about the central axis J2, and the shaft 47 is centered. The shaft J3 is rotated about the center. Thereby, the claw body 411 is rotated about the central axis J3 from the rotational position indicated by the two-dot chain line in FIG. 11 toward the rotational position indicated by the solid line, as shown by the solid line in FIG. The upper side is moved, and the side of the protruding portion 413 abuts against the edge of the substrate 9. In other words, the outer edge portion of the substrate 9 bites into the concave portion formed by the side surface of the protruding portion 413 and the upper surface 412 of the claw body 411. Actually, the force acting on the plurality of abutting portions 43 is transmitted to the plurality of claw portions 41a disposed along the outer edge of the substrate 9, and the plurality of claw portions 41a press the substrate 9 toward the central axis J1 with substantially the same force. Different parts of the edge. As described above, in the chuck portion 4a shown in FIG. 9, the weight of the top plate 123 disposed at the joint position is used to hold the substrate 9 on the one hand with respect to the center of rotation.

圖12為顯示卡盤部之又一例之圖。圖12之卡盤部4b係設於頂板123。圖12中,關於頂板123及抵接部收容部431內之構成之一部分,顯示包含中心軸J1之面而構成之截面。卡盤部4b具備複數個爪部41及傳遞機構42b。於沿中心軸J1觀察之情況下,複數個爪部41係配置於基板9之周圍。傳遞機構42b具有近似於將圖3之傳遞機構42上下反轉者之構造。 Fig. 12 is a view showing still another example of the chuck portion. The chuck portion 4b of Fig. 12 is attached to the top plate 123. In FIG. 12, a cross section including a surface including the central axis J1 is displayed on one of the configurations of the top plate 123 and the contact portion accommodating portion 431. The chuck portion 4b includes a plurality of claw portions 41 and a transmission mechanism 42b. When viewed along the central axis J1, a plurality of claw portions 41 are disposed around the substrate 9. The transmission mechanism 42b has a configuration similar to that of the transmission mechanism 42 of Fig. 3 upside down.

具體而言,傳遞機構42b具備相對於各爪部41而設置之抵接部43及複數個桿44、45。抵接部43係藉由上側支撐部432及下側支撐部433而於上下方向可移動地支撐。於頂板123之下面設置有大致筒狀之抵接部收容部431,下側支撐部433係設於抵接部收容部431內。抵接部43之上端部係配置於形成在頂板123之內部空間124。於該內部空間124配置有桿44,桿44之一端部經由銷421連接於抵接部43之上端部。於桿44形成有沿桿44之長邊方向延伸之長孔441,銷421係插入長孔441。桿44係藉由桿支撐部440,以垂直於圖12之紙面之旋轉軸為中心而可旋轉地支撐。 Specifically, the transmission mechanism 42 b includes an abutting portion 43 provided with respect to each of the claw portions 41 and a plurality of rods 44 and 45 . The abutting portion 43 is movably supported in the vertical direction by the upper side support portion 432 and the lower side support portion 433. A substantially cylindrical abutting portion accommodating portion 431 is provided on the lower surface of the top plate 123, and the lower supporting portion 433 is provided in the abutting portion accommodating portion 431. The upper end portion of the abutting portion 43 is disposed in the inner space 124 formed in the top plate 123. A rod 44 is disposed in the internal space 124, and one end of the rod 44 is connected to the upper end portion of the abutting portion 43 via a pin 421. The rod 44 is formed with a long hole 441 extending in the longitudinal direction of the rod 44, and the pin 421 is inserted into the long hole 441. The rod 44 is rotatably supported by the rod supporting portion 440 around a rotation axis perpendicular to the paper surface of Fig. 12.

桿44之另一端部經由銷422連接於另一個桿45之上端部。於桿45形成有沿桿45之長邊方向延伸之長孔451,銷422係插入長孔451。桿45係藉由桿支撐部450,以垂直於圖12之紙面之旋轉軸為中心而可旋轉地支撐。於桿45上,較桿支撐部450靠下側之部分係配置於頂板123之內部空間124之外側。桿支撐部450之下側附近的桿45之部位之周圍,係藉由隔膜密閉427所覆蓋。於桿45之下端部安裝有爪部41。 The other end of the rod 44 is coupled to the upper end of the other rod 45 via a pin 422. The rod 45 is formed with an elongated hole 451 extending in the longitudinal direction of the rod 45, and the pin 422 is inserted into the long hole 451. The rod 45 is rotatably supported by the rod supporting portion 450 around a rotation axis perpendicular to the paper surface of Fig. 12. The portion of the rod 45 that is lower than the rod support portion 450 is disposed on the outer side of the inner space 124 of the top plate 123. The periphery of the portion of the rod 45 near the lower side of the rod support portion 450 is covered by the diaphragm seal 427. A claw portion 41 is attached to the lower end portion of the rod 45.

安裝於抵接部43上之圓板部434,係配置於上側支 撐部432與下側支撐部433之間。於圓板部434與上側支撐部432之間設置有圍繞抵接部43之周圍之彈簧435。藉由此彈簧435,朝下方對圓板部434及抵接部43賦予勢能。於頂板123位於分離位置,且如圖12中二點鏈線所示,圓板部434與下側支撐部433之上表面抵接之狀態下,桿45之相對於上下方向之傾斜角變小,爪部41自基板9之邊緣朝外側分離。 The disc portion 434 attached to the abutting portion 43 is disposed on the upper branch The support portion 432 is between the lower support portion 433 and the lower support portion 433. A spring 435 surrounding the periphery of the abutting portion 43 is provided between the disc portion 434 and the upper side support portion 432. By the spring 435, potential energy is applied to the disc portion 434 and the abutting portion 43 downward. When the top plate 123 is at the separated position, and the circular plate portion 434 is in contact with the upper surface of the lower support portion 433 as shown by the two-dot chain line in FIG. 12, the inclination angle of the rod 45 with respect to the up and down direction becomes small. The claw portion 41 is separated from the edge of the substrate 9 toward the outside.

於支撐部基部142之上表面設置有朝上方突出之卡合部241a,當頂板123位於連結位置時,自抵接部收容部431朝下方突出之抵接部43之下端部嵌合於卡合部241a之上部之凹部242a。藉此,頂板123與基板支撐部141連結。此外,如圖12中實線所示,迄卡合部241a之上表面與抵接部收容部431之下面抵接為止,藉由基板支撐部141將抵接部43朝上方壓入。藉此,桿45傾斜而使桿45之下端部靠近基板9,進而爪部41抵接於基板9之邊緣。實際上,作用於複數個抵接部43之力分別傳遞至沿基板9之外緣配置之複數個爪部41,藉由複數個爪部41朝中心軸J1按壓基板9之邊緣之不同部位。如此,於圖12所示之卡盤部4b中,利用配置於連結位置之頂板123之重量,實現使基板9相對於旋轉中心一方面進行對位一方面進行保持。再者,根據防止自基板9之上表面91飛散之處理液因連接於爪部之傳遞機構之構成要素而彈回並附著於上表面91之觀點,卡盤部較佳為設置於基板支撐部141。 An engaging portion 241a that protrudes upward is provided on the upper surface of the base portion 142 of the support portion. When the top plate 123 is at the connecting position, the lower end portion of the abutting portion 43 that protrudes downward from the abutting portion accommodating portion 431 is fitted to the engaging portion. a concave portion 242a at an upper portion of the portion 241a. Thereby, the top plate 123 is coupled to the substrate supporting portion 141. Further, as shown by the solid line in FIG. 12, the upper surface of the engaging portion 241a abuts against the lower surface of the abutting portion accommodating portion 431, and the abutting portion 43 is pushed upward by the substrate supporting portion 141. Thereby, the rod 45 is inclined such that the lower end portion of the rod 45 is close to the substrate 9, and the claw portion 41 abuts against the edge of the substrate 9. Actually, the force acting on the plurality of abutting portions 43 is transmitted to the plurality of claw portions 41 disposed along the outer edge of the substrate 9, and the plurality of claw portions 41 press the different portions of the edge of the substrate 9 toward the central axis J1. As described above, in the chuck portion 4b shown in FIG. 12, the weight of the top plate 123 disposed at the connection position is used to hold the substrate 9 in alignment with respect to the rotation center. Further, the chuck portion is preferably provided on the substrate supporting portion from the viewpoint of preventing the processing liquid scattered from the upper surface 91 of the substrate 9 from being bounced back and attached to the upper surface 91 by the constituent elements of the transmission mechanism connected to the claw portion. 141.

上述基板處理裝置1中,可進行各種之變形。 In the substrate processing apparatus 1, various modifications can be made.

作為將作用於抵接部之力傳遞至複數個爪部之傳遞機構,也可採用上述以外之各式各樣之構造。例如,於圖9所示之傳遞機構42a中,也可於軸46之軸47側之端部形成陽螺紋,且與 設於軸47之陰螺紋螺合。該情況下,藉由抵接部43於上下方向移動,軸46以中心軸J2為中心進行旋轉,軸47於沿基板9之上表面91之方向(圖9之左右方向)直線移動。此外,傳遞機構除僅將作用於對各爪部而設之抵接部43之力傳遞至該爪部之構造以外,也可為將作用於一個或複數個抵接部43之力連動地傳遞至複數個爪部之構造。 As the transmission mechanism for transmitting the force acting on the abutting portion to the plurality of claw portions, various configurations other than the above may be employed. For example, in the transmission mechanism 42a shown in FIG. 9, a male thread may be formed on the end portion of the shaft 46 on the side of the shaft 47, and The female screw provided on the shaft 47 is screwed. In this case, the shaft 46 is rotated about the central axis J2 by the abutting portion 43 in the vertical direction, and the shaft 47 linearly moves in the direction along the upper surface 91 of the substrate 9 (the horizontal direction in FIG. 9). Further, the transmission mechanism may transmit the force acting on the one or a plurality of the abutting portions 43 in addition to the structure in which the force acting on the abutting portion 43 provided for each of the claw portions is transmitted to the claw portion. To the construction of a plurality of claws.

於支撐於基板支撐部141之基板9之大小變動之情況下,以連結位置之頂板123與基板9之間的距離一定之方式彈性變形之彈性構件,也可設於傳遞機構之抵接部43以外。此外,於根據基板9之大小,允許連結位置上之頂板123與基板9之間的距離略微變動之情況下,也可於傳遞機構中省略上述彈性構件。 When the size of the substrate 9 supported by the substrate supporting portion 141 is changed, the elastic member elastically deformed so that the distance between the top plate 123 and the substrate 9 at the connecting position is constant may be provided in the abutting portion 43 of the transmitting mechanism. other than. Further, in the case where the distance between the top plate 123 and the substrate 9 at the connection position is allowed to slightly vary depending on the size of the substrate 9, the elastic member may be omitted in the transmission mechanism.

於上述實施形態中,藉由將密閉空間開閉機構即腔室開閉機構131兼作支撐上表面對向部即頂板123之對向部支撐機構(之一部分),可將基板處理裝置1之構造簡化,但根據基板處理裝置1之設計,對向部支撐機構與腔室開閉機構131也可分開設置。 In the above-described embodiment, the structure of the substrate processing apparatus 1 can be simplified by using the chamber opening and closing mechanism 131, which is a closed space opening and closing mechanism, as the opposing portion supporting mechanism (one part) of the top plate 123 that supports the upper surface opposing portion. However, depending on the design of the substrate processing apparatus 1, the opposing support mechanism and the chamber opening and closing mechanism 131 may be provided separately.

圖13所示之例中,上下方向移動頂板123之頂板移動機構126係作為對向部支撐機構而設。頂板移動機構126具備第1磁鐵261、第2磁鐵262及磁鐵移動機構263。第1磁鐵261及第2磁鐵262係分別為以中心軸J1為中心之大致圓環狀。於頂板123之上表面設置有藉由非磁性體所形成之筒狀之頂板軸部235,第1磁鐵261係於頂板軸部235之內部沿頂板軸部235之外周面而配置。第2磁鐵262係於形成在腔室蓋部122之環狀孔264內,圍繞頂板軸部235之周圍而配置。第2磁鐵262係藉由磁鐵移動機構263而於環狀孔264內沿上下方向移動。藉此,頂板123可於相對於基 板支撐部141朝上方分離之分離位置、及與基板支撐部141連結之連結位置之間,對於基板支撐部141進行相對移動。 In the example shown in Fig. 13, the top plate moving mechanism 126 that moves the top plate 123 in the vertical direction is provided as a facing portion supporting mechanism. The top plate moving mechanism 126 includes a first magnet 261, a second magnet 262, and a magnet moving mechanism 263. Each of the first magnet 261 and the second magnet 262 has a substantially annular shape centering on the central axis J1. A cylindrical top plate shaft portion 235 formed of a non-magnetic material is provided on the upper surface of the top plate 123, and the first magnet 261 is disposed inside the top plate shaft portion 235 along the outer peripheral surface of the top plate shaft portion 235. The second magnet 262 is disposed in the annular hole 264 formed in the chamber cover portion 122 and is disposed around the periphery of the top plate shaft portion 235. The second magnet 262 is moved in the vertical direction in the annular hole 264 by the magnet moving mechanism 263. Thereby, the top plate 123 can be opposite to the base The substrate support portion 141 is relatively moved between the separation position at which the plate support portion 141 is separated upward and the connection position at which the substrate support portion 141 is coupled.

此外,也可藉由腔室開閉機構131使腔室蓋部122相對於腔室本體121相對地昇降,也可使腔室本體121相對於位置固定之腔室蓋部122進行昇降。於該情況下,也藉由使腔室本體121上昇而使腔室本體121之上端部靠近或抵接於腔室蓋部122,使頂板123與腔室蓋部122成為非接觸狀態,且配置於連結位置(參照圖5或圖7)。此外,藉由使腔室本體121下降而自腔室蓋部122分離,頂板123自位於腔室本體121之上方之腔室蓋部122之一部分懸吊並配置於分離位置(參照圖1)。如上述,選擇性地將頂板123配置於分離位置與連結位置之對向部支撐機構,可以各式各樣之構造實現。 Further, the chamber lid portion 122 may be raised and lowered relative to the chamber body 121 by the chamber opening and closing mechanism 131, and the chamber body 121 may be raised and lowered with respect to the positionally fixed chamber lid portion 122. In this case, the upper end portion of the chamber body 121 is brought into close contact with or abuts against the chamber cover portion 122 by raising the chamber body 121, so that the top plate 123 and the chamber cover portion 122 are brought into a non-contact state, and are disposed. At the connection position (refer to Figure 5 or Figure 7). Further, the chamber body 121 is separated from the chamber cover portion 122 by lowering the chamber body 121, and the top plate 123 is partially suspended from the chamber cover portion 122 located above the chamber body 121 and disposed at a separated position (see Fig. 1). As described above, the opposing portion supporting mechanism that selectively disposes the top plate 123 at the separated position and the connecting position can be realized in various configurations.

於基板處理裝置1中,也可將僅與基板9之上表面91之外緣部對向之圓環板狀之構件作為上表面對向部而設置。於該情況下,於將處理液供給於旋轉之基板9之處理中,藉由配置於連結位置之上述圓環板狀之構件,防止自基板9之外緣部飛散之處理液於處理腔室12之內壁被彈回而再次附著於基板9之上表面91。如此,於基板處理裝置1中,設置有與基板9之上表面91之至少外緣部對向之上表面對向部。 In the substrate processing apparatus 1, a member having an annular plate shape that faces only the outer edge portion of the upper surface 91 of the substrate 9 may be provided as the upper surface opposing portion. In this case, in the process of supplying the processing liquid to the rotating substrate 9, the processing liquid which is scattered from the outer edge portion of the substrate 9 is prevented from being processed in the processing chamber by the annular plate-shaped member disposed at the connection position. The inner wall of 12 is springed back and attached to the upper surface 91 of the substrate 9 again. As described above, in the substrate processing apparatus 1, at least the outer edge portion of the upper surface 91 of the substrate 9 faces the upper surface opposing portion.

基板旋轉機構15之定子部151及轉子部152之形狀及構造,也可進行各種之變更。例如,也可於轉子部152之內側(中心軸J1側)設置定子部151。轉子部152不一定要以懸浮狀態進行旋轉,也可於處理腔室12內設置機械式地支撐轉子部152之導引等之構造,也可使轉子部152沿該導引旋轉。此外,基板旋轉機構 15不一定要為中空馬達,例如,也可利用使固定於圓板狀之基板支撐部141下面之軸旋轉之基板旋轉機構。 The shape and structure of the stator portion 151 and the rotor portion 152 of the substrate rotating mechanism 15 can be variously changed. For example, the stator portion 151 may be provided inside the rotor portion 152 (on the side of the center axis J1). The rotor portion 152 does not have to be rotated in a suspended state, and a structure for mechanically supporting the guide of the rotor portion 152 or the like may be provided in the processing chamber 12, and the rotor portion 152 may be rotated along the guide. In addition, the substrate rotating mechanism The 15 does not have to be a hollow motor. For example, a substrate rotating mechanism that rotates a shaft fixed to the lower surface of the disk-shaped substrate supporting portion 141 may be used.

於基板處理裝置1中,基板支撐部141、基板旋轉機構15之轉子部152、頂板123及卡盤部4、4a、4b係設於密閉空間形成部即處理腔室12內,於密閉之內部空間對基板9進行處理,但根據基板處理裝置之設計,也可於開放之空間內對基板9進行處理。 In the substrate processing apparatus 1, the substrate supporting portion 141, the rotor portion 152 of the substrate rotating mechanism 15, the top plate 123, and the chuck portions 4, 4a, 4b are disposed in the processing chamber 12, which is a sealed space forming portion, and are sealed inside. The substrate 9 is processed in a space, but the substrate 9 can be processed in an open space depending on the design of the substrate processing apparatus.

於基板處理裝置1中進行處理之基板,不限於半導體基板,也可為玻璃基板或其他之基板。 The substrate to be processed in the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.

圖14為顯示本發明之第2實施形態之基板處理裝置1a之剖視圖。基板處理裝置1a之基本構造,係與圖1之基板處理裝置1同樣(包含圖2之氣液供給部18及氣液排出部19),並對相同之構成賦予相同符號。於以下之基板處理裝置1a之構造之說明中,主要對與基板處理裝置1之相異點進行說明。 Fig. 14 is a cross-sectional view showing a substrate processing apparatus 1a according to a second embodiment of the present invention. The basic structure of the substrate processing apparatus 1a is the same as that of the substrate processing apparatus 1 of FIG. 1 (including the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 of FIG. 2), and the same components are denoted by the same reference numerals. In the description of the structure of the substrate processing apparatus 1a below, the difference from the substrate processing apparatus 1 will be mainly described.

於圖14之基板處理裝置1a之支撐部基部142的上表面設置有朝上方突出之複數個卡合銷140,複數個卡合銷140係於圓周方向排列配置。如已述之,於各卡合部241之下部設置有朝上方凹陷之凹部,如後述,卡合銷140插入該凹部。實際上,卡合銷140及卡合部241係與複數個爪部41於圓周方向上配置於不同之位置。卡合銷140及卡合部241之組合之個數較佳為3個以上。 The upper surface of the support portion base portion 142 of the substrate processing apparatus 1a of Fig. 14 is provided with a plurality of engagement pins 140 projecting upward, and a plurality of engagement pins 140 are arranged in the circumferential direction. As described above, a recessed portion that is recessed upward is provided at a lower portion of each of the engaging portions 241, and the engaging pin 140 is inserted into the recessed portion as will be described later. Actually, the engaging pin 140 and the engaging portion 241 are disposed at different positions in the circumferential direction from the plurality of claw portions 41. The number of combinations of the engaging pin 140 and the engaging portion 241 is preferably three or more.

於轉子部152之上部設置有朝上下方向延伸之桿狀之複數個連接構件52,轉子部152藉由複數個連接構件52而與基板支撐部141之支撐部基部142連接。複數個連接構件52較佳為於圓周方向以等角度間隔配置。 A plurality of connecting members 52 having a rod shape extending in the vertical direction are provided on the upper portion of the rotor portion 152, and the rotor portion 152 is connected to the support portion base portion 142 of the substrate supporting portion 141 by a plurality of connecting members 52. The plurality of connecting members 52 are preferably arranged at equal angular intervals in the circumferential direction.

於轉子部152與基板支撐部141之間設置有以中心軸J1為中心之大致環狀之錘部51。於錘部51設置有上下方向貫通之複數個貫通孔511(參照圖15)。複數個貫通孔511分別供上述複數個連接構件52插入。錘部51之各貫通孔511之內周面係與連接構件52之外周面滑接,並且錘部51可沿連接構件52而於上下方向移動。複數個連接構件52係於基板支撐部141與配置於基板支撐部141之下方之轉子部152之間,對錘部51之上下方向之移動進行導引之導引部。 A substantially annular hammer portion 51 centering on the central axis J1 is provided between the rotor portion 152 and the substrate supporting portion 141. The hammer portion 51 is provided with a plurality of through holes 511 (see FIG. 15) that penetrate in the vertical direction. A plurality of through holes 511 are respectively inserted into the plurality of connecting members 52. The inner circumferential surface of each of the through holes 511 of the weight portion 51 is slidably coupled to the outer circumferential surface of the connecting member 52, and the weight portion 51 is movable in the vertical direction along the connecting member 52. The plurality of connecting members 52 are guide portions that guide the movement of the hammer portion 51 in the vertical direction between the substrate supporting portion 141 and the rotor portion 152 disposed below the substrate supporting portion 141.

圖15為顯示卡盤部4及錘支撐機構53之構成之圖,且將圖14中顯示支撐部基部142之左側之截面附近放大顯示。如已述之,卡盤部4係設於基板支撐部141,卡盤部4之一部分係設於以中心軸J1為中心之圓環狀之支撐部基部142之內部。圖15中,關於腔室本體121、錘部51、支撐部基部142、後述之連結部支撐部492及波紋管493,顯示包含中心軸J1之面所構成之截面(圖16、圖19及圖23中也同樣)。卡盤部4具備已述之複數個爪部41及傳遞機構42。如已述之,複數個爪部41係於藉由複數個支撐銷144所支撐之基板9之周圍沿圓周方向排列配置。複數個爪部41之個數至少為3個,於該至少3個爪部41中於圓周方向上相鄰接之2個爪部41之各組合中,連結該2個爪部41與中心軸J1之線所夾之角度小於180度。該至少3個爪部41較佳為沿圓周方向以等角度間隔設置。本實施形態中,4個爪部41係沿圓周方向以等角度間隔設置。 Fig. 15 is a view showing the configuration of the chuck portion 4 and the hammer supporting mechanism 53, and the vicinity of the cross section on the left side of the support portion base portion 142 shown in Fig. 14 is enlarged. As described above, the chuck portion 4 is provided on the substrate supporting portion 141, and one portion of the chuck portion 4 is provided inside the annular supporting portion base portion 142 centering on the central axis J1. In FIG. 15, the chamber main body 121, the weight portion 51, the support portion base portion 142, a connecting portion support portion 492 and a bellows 493 which will be described later, and a cross section including the surface including the central axis J1 are displayed (FIG. 16, FIG. 19 and FIG. The same is true in 23). The chuck portion 4 includes a plurality of claw portions 41 and a transmission mechanism 42 which have been described. As described above, the plurality of claw portions 41 are arranged in the circumferential direction around the periphery of the substrate 9 supported by the plurality of support pins 144. The number of the plurality of claw portions 41 is at least three, and the two claw portions 41 and the central axis are coupled to each of the two claw portions 41 adjacent to each other in the circumferential direction of the at least three claw portions 41. The angle of the line of J1 is less than 180 degrees. The at least three claw portions 41 are preferably disposed at equal angular intervals in the circumferential direction. In the present embodiment, the four claw portions 41 are provided at equal angular intervals in the circumferential direction.

傳遞機構42具備相對於各爪部41而設置之連結部49及複數個桿44、45。連結部49係上下方向延伸之桿構件,其藉 由設於支撐部基部142之下面之圓筒狀之連結部支撐部492而於上下方向可移動地支撐。連結部49之下端部係連接於錘部51。於連結部支撐部492之下端面設置有大致筒狀之波紋管493。波紋管493係由不使氣體或液體通過之材料形成。波紋管493與連結部49之連接部、波紋管493與連結部支撐部492之連接部、及連結部支撐部492與支撐部基部142之連接部被密閉,防止氣體或液體之通過。 The transmission mechanism 42 includes a coupling portion 49 provided with respect to each of the claw portions 41 and a plurality of rods 44 and 45. The connecting portion 49 is a rod member extending in the vertical direction, and the borrowing member 49 The cylindrical connecting portion supporting portion 492 provided on the lower surface of the support portion base portion 142 is movably supported in the vertical direction. The lower end portion of the joint portion 49 is connected to the weight portion 51. A substantially cylindrical bellows 493 is provided on the lower end surface of the joint supporting portion 492. The bellows 493 is formed of a material that does not allow gas or liquid to pass therethrough. The connection portion between the bellows 493 and the connection portion 49, the connection portion between the bellows 493 and the connection portion support portion 492, and the connection portion between the connection portion support portion 492 and the support portion base portion 142 are sealed to prevent passage of gas or liquid.

連結部49之上端部係配置於形成在支撐部基部142之內部空間143。於該內部空間143配置有桿44,桿44之一端部經由銷421連接於連結部49之上端部。於桿44形成有沿桿44之長邊方向延伸之長孔441,銷421係插入長孔441。桿44係藉由設於內部空間143之桿支撐部440,以垂直於圖15之紙面之旋轉軸為中心而可旋轉地支撐。 The upper end portion of the coupling portion 49 is disposed in the internal space 143 formed in the base portion 142 of the support portion. A rod 44 is disposed in the internal space 143, and one end of the rod 44 is connected to the upper end portion of the joint portion 49 via a pin 421. The rod 44 is formed with a long hole 441 extending in the longitudinal direction of the rod 44, and the pin 421 is inserted into the long hole 441. The rod 44 is rotatably supported centering on the rotation axis of the paper surface of FIG. 15 by the rod support portion 440 provided in the internal space 143.

桿44之另一端部經由銷422連接於大致沿上下方向之另一個桿45之下端部。於桿45形成有沿桿45之長邊方向延伸之長孔451,銷422係插入長孔451。於支撐部基部142之上表面設置有與內部空間143連絡之連絡孔145,桿45係插入連絡孔145。桿45係藉由固定於連絡孔145周圍之桿支撐部450,以垂直於圖15之紙面之旋轉軸為中心而可旋轉地支撐。於桿45上,較桿支撐部450靠上側之部分係配置於支撐部基部142之內部空間143之外側,其周圍由大致筒狀之波紋管423所覆蓋。於桿45之上端部安裝有爪部41。波紋管423係由不使氣體或液體通過之材料形成。波紋管423與爪部41之連接部、波紋管423與桿支撐部450之連接部、及桿支撐部450與支撐部基部142之連接部被密閉,防止氣體或液體之通過。 The other end of the rod 44 is connected via a pin 422 to the lower end of the other rod 45 substantially in the up and down direction. The rod 45 is formed with an elongated hole 451 extending in the longitudinal direction of the rod 45, and the pin 422 is inserted into the long hole 451. A contact hole 145 is formed on the upper surface of the support base 142 to communicate with the internal space 143, and the rod 45 is inserted into the contact hole 145. The rod 45 is rotatably supported centering on the rotation axis of the paper surface of Fig. 15 by the rod supporting portion 450 fixed around the coupling hole 145. The rod 45 is disposed on the outer side of the inner space 143 of the support base 142 on the upper side of the rod support portion 450, and is surrounded by a substantially cylindrical bellows 423. A claw portion 41 is attached to an upper end portion of the rod 45. The bellows 423 is formed of a material that does not allow gas or liquid to pass therethrough. The connection portion between the bellows 423 and the claw portion 41, the connection portion between the bellows 423 and the rod support portion 450, and the connection portion between the rod support portion 450 and the support portion base portion 142 are sealed to prevent passage of gas or liquid.

如圖15所示,於腔室側壁部214設置有朝下部環狀空間217開口之凹部218,於凹部218內設置錘支撐機構53。錘支撐機構53具備空氣汽缸531,於空氣汽缸531之活塞桿532之前端安裝有支撐構件533。支撐構件533之前端面(中心軸J1側之面)534係隨著朝上方而自中心軸J1分離之傾斜面。於空氣汽缸531之本體與支撐構件533之間圍繞著活塞桿532設置有波紋管535。波紋管535係由不使氣體或液體通過之材料形成,防止氣體或液體朝空氣汽缸531之內部之侵入。於空氣汽缸531推壓活塞桿532之狀態下,錘部51之外緣部藉由支撐構件533自下側支撐,錘部51配置於圖15所示之位置(以下,稱為「支撐位置」)。藉由位於支撐位置之錘部51,朝上方推昇連結部49。因此,桿44之桿45側之端部係較連結部49側之端部位於下側,桿45沿上下方向大致直立。藉此,爪部41配置於自基板9之邊緣朝外側(與中心軸J1相反側)分離之位置。傳遞機構42所包括之上述構成係相對於複數個爪部41之各個而設置。錘支撐機構53也可具有馬達等。 As shown in FIG. 15, a recessed portion 218 that opens toward the lower annular space 217 is provided in the chamber side wall portion 214, and a hammer supporting mechanism 53 is provided in the recessed portion 218. The hammer supporting mechanism 53 is provided with an air cylinder 531, and a support member 533 is attached to the front end of the piston rod 532 of the air cylinder 531. The front end surface (surface on the central axis J1 side) 534 of the support member 533 is an inclined surface that is separated from the central axis J1 as it goes upward. A bellows 535 is disposed around the piston rod 532 between the body of the air cylinder 531 and the support member 533. The bellows 535 is formed of a material that does not allow gas or liquid to pass therethrough to prevent intrusion of gas or liquid into the interior of the air cylinder 531. In a state where the air cylinder 531 pushes the piston rod 532, the outer edge portion of the weight portion 51 is supported from the lower side by the support member 533, and the weight portion 51 is disposed at the position shown in Fig. 15 (hereinafter, referred to as "support position". ). The joint portion 49 is pushed upward by the hammer portion 51 at the support position. Therefore, the end portion of the rod 44 on the side of the rod 45 is located lower than the end portion on the side of the joint portion 49, and the rod 45 is substantially erected in the vertical direction. Thereby, the claw portion 41 is disposed at a position separated from the edge of the substrate 9 toward the outside (the side opposite to the central axis J1). The above-described configuration included in the transmission mechanism 42 is provided for each of the plurality of claw portions 41. The hammer support mechanism 53 may also have a motor or the like.

其次,參照圖4對基板處理裝置1a中之基板9之處理流程進行說明。基板處理裝置1a中,如圖14所示,於腔室蓋部122自腔室本體121分離而位於上方,且杯部161自腔室蓋部122分離而位於下方之狀態下,藉由外部之搬送機構將基板9搬入處理腔室12內,且藉由基板支撐部141自下側支撐(步驟S10)。以下,稱圖14所示之處理腔室12及杯部161之狀態為「開放狀態」。腔室蓋部122與腔室側壁部214之間之開口,係以中心軸J1為中心之環狀,以下稱為「環狀開口81」。基板處理裝置1a中,藉由腔室蓋部122自腔室本體121分離,而於基板9之周圍(亦即,徑向外 側)形成環狀開口81。於步驟S10中,基板9係經由環狀開口81搬入。 Next, the processing flow of the substrate 9 in the substrate processing apparatus 1a will be described with reference to FIG. In the substrate processing apparatus 1a, as shown in FIG. 14, the chamber cover portion 122 is separated from the chamber body 121 and positioned above, and the cup portion 161 is separated from the chamber cover portion 122 and is positioned below, by the outside. The transport mechanism carries the substrate 9 into the processing chamber 12, and is supported by the substrate supporting portion 141 from the lower side (step S10). Hereinafter, the state of the processing chamber 12 and the cup portion 161 shown in Fig. 14 is referred to as "open state". The opening between the chamber cover portion 122 and the chamber side wall portion 214 is an annular shape centering on the central axis J1, and is hereinafter referred to as "annular opening 81". The substrate processing apparatus 1a is separated from the chamber body 121 by the chamber cover portion 122, and is surrounded by the substrate 9 (that is, radially outward). The side) forms an annular opening 81. In step S10, the substrate 9 is carried in through the annular opening 81.

若搬入基板9,則藉由圖15所示之錘支撐機構53之空氣汽缸531緩慢拉入活塞桿532,如圖16所示,支撐構件533朝腔室側壁部214之凹部218內移動。藉此,支撐構件533之前端面534自錘部51之外緣部分離,進而解除藉由錘支撐機構53對錘部51之支撐。連結部49及錘部51係自圖16中二點鏈線所示之支撐位置下降。桿44之桿45側之端部朝較連結部49側之端部更上側移動,於是桿45傾斜而使桿45之上端部靠近基板9。藉此,爪部41抵接於支撐銷144上之基板9之邊緣(側面),進而藉由爪部41朝中心軸J1按壓該邊緣。實際上,作用於複數個連結部49之力分別傳遞至複數個爪部41,且藉由排列配置於圓周方向之複數個爪部41以大致相同之力朝中心軸J1按壓基板9之邊緣之不同部位。其結果,可一方面將基板9之中心配置於中心軸J1上,一方面藉由卡盤部4牢固地保持基板9(步驟S11)。此時,藉由複數個爪部41與基板9之邊緣抵接,限制錘部51朝下方之移動,錘部51配置於圖16中實線所示位置(以下稱為「支撐解除位置」)。 When the substrate 9 is carried in, the piston rod 532 is slowly pulled in by the air cylinder 531 of the hammer supporting mechanism 53 shown in Fig. 15, and as shown in Fig. 16, the supporting member 533 moves into the concave portion 218 of the chamber side wall portion 214. Thereby, the front end surface 534 of the support member 533 is separated from the outer edge portion of the weight portion 51, and the support of the hammer portion 51 by the hammer support mechanism 53 is released. The connecting portion 49 and the hammer portion 51 are lowered from the supporting position shown by the two-dot chain line in Fig. 16 . The end portion of the rod 44 on the side of the rod 45 is moved upward from the end portion on the side closer to the joint portion 49, so that the rod 45 is inclined so that the upper end portion of the rod 45 is close to the substrate 9. Thereby, the claw portion 41 abuts against the edge (side surface) of the substrate 9 on the support pin 144, and the edge is pressed by the claw portion 41 toward the central axis J1. Actually, the force acting on the plurality of connecting portions 49 is transmitted to the plurality of claw portions 41, respectively, and the edges of the substrate 9 are pressed toward the central axis J1 by substantially the same force by a plurality of claw portions 41 arranged in the circumferential direction. Different parts. As a result, the center of the substrate 9 can be placed on the central axis J1, and the substrate 9 can be firmly held by the chuck portion 4 (step S11). At this time, the plurality of claw portions 41 are in contact with the edge of the substrate 9, and the movement of the weight portion 51 is restricted downward, and the weight portion 51 is disposed at a position indicated by a solid line in FIG. 16 (hereinafter referred to as a "support release position"). .

接著,腔室蓋部122藉由腔室開閉機構131而自圖14所示之位置下降至圖17所示之位置(靠近腔室本體121之位置)。此外,杯部161自圖14所示之位置上昇至圖17所示之位置,且位於環狀開口81之徑向外側全周。以下之說明中,稱圖17所示之處理腔室12及杯部161之狀態為「第1密閉狀態」。此外,稱圖17所示之杯部161之位置為「液接取位置」,稱圖14所示之杯部161之位置為「退避位置」。杯部移動機構162係於環狀開口81之 徑向外側之液接取位置與較液接取位置下方之退避位置之間使杯部161沿上下方向移動。 Next, the chamber cover portion 122 is lowered from the position shown in FIG. 14 to the position shown in FIG. 17 (a position close to the chamber body 121) by the chamber opening and closing mechanism 131. Further, the cup portion 161 is raised from the position shown in FIG. 14 to the position shown in FIG. 17, and is located on the radially outer side of the annular opening 81 over the entire circumference. In the following description, the state of the processing chamber 12 and the cup portion 161 shown in Fig. 17 is referred to as "first sealed state". Further, the position of the cup portion 161 shown in Fig. 17 is referred to as "liquid picking position", and the position of the cup portion 161 shown in Fig. 14 is referred to as "retracted position". The cup moving mechanism 162 is attached to the annular opening 81 The cup portion 161 is moved in the up and down direction between the radially outer liquid picking position and the retracted position below the liquid contact position.

於位於液接取位置之杯部161中,側壁部611係在徑向上與環狀開口81對向。此外,上表面部612之內緣部之上表面接合於腔室蓋部122之外緣部下端之唇封232全周。於腔室蓋部122與杯部161之上表面部612之間形成有防止氣體或液體通過之密閉部。藉此,形成有藉由腔室本體121、腔室蓋部122、杯部161、及杯對向部163所包圍之密閉的空間(以下稱為「擴大密閉空間100」)。擴大密閉空間100係藉由經由環狀開口81將腔室蓋部122及腔室本體121之間的腔室空間120、與杯部161及杯對向部163所包圍之側面空間160連通而形成之一個空間。 In the cup portion 161 located at the liquid pick-up position, the side wall portion 611 is opposed to the annular opening 81 in the radial direction. Further, the upper surface of the inner edge portion of the upper surface portion 612 is joined to the entire periphery of the lip seal 232 at the lower end of the outer edge portion of the chamber cover portion 122. A sealing portion that prevents passage of gas or liquid is formed between the chamber cover portion 122 and the upper surface portion 612 of the cup portion 161. Thereby, a sealed space (hereinafter referred to as "enlarged sealed space 100") surrounded by the chamber body 121, the chamber cover portion 122, the cup portion 161, and the cup opposing portion 163 is formed. The enlarged sealed space 100 is formed by communicating the chamber space 120 between the chamber cover portion 122 and the chamber body 121 via the annular opening 81 with the side space 160 surrounded by the cup portion 161 and the cup opposing portion 163. One space.

此外,於第1密閉狀態下,於頂板123之各卡合部241之下部之凹部嵌入自支撐部基部142朝上方突出之卡合銷140之上端部。藉此,頂板123與基板支撐部141之支撐部基部142連接。換言之,頂板123之相對於基板支撐部141之旋轉方向(圓周方向)之相對位置被固定。以下之說明中,稱頂板123與基板支撐部141連結之位置為「連結位置」。當腔室蓋部122下降時,藉由基板旋轉機構15控制支撐部基部142之旋轉位置,以使卡合部241與卡合銷140嵌合。實際上,於各卡合銷140之上端面、及與該上端面對向之卡合部241之凹部內之面設置有磁鐵,藉由作用於這些磁鐵之間的磁力(引力),牢固地將卡合部241與卡合銷140結合。 Further, in the first sealed state, the concave portion at the lower portion of each of the engaging portions 241 of the top plate 123 is fitted into the upper end portion of the engaging pin 140 that protrudes upward from the supporting portion base portion 142. Thereby, the top plate 123 is connected to the support base 142 of the substrate supporting portion 141. In other words, the relative position of the top plate 123 with respect to the rotation direction (circumferential direction) of the substrate supporting portion 141 is fixed. In the following description, the position at which the top plate 123 and the substrate supporting portion 141 are coupled is referred to as a "connection position". When the chamber cover portion 122 is lowered, the rotation position of the support portion base portion 142 is controlled by the substrate rotation mechanism 15 so that the engagement portion 241 is fitted to the engagement pin 140. Actually, a magnet is provided on the surface of the upper end surface of each of the engaging pins 140 and the concave portion of the engaging portion 241 opposed to the upper end surface, and the magnetic force (gravitational force) acting between the magnets is firmly fixed. The engaging portion 241 is coupled to the engaging pin 140.

此時,被支撐部237之凸緣部239係朝板支撐部222之凸緣部224之上方分離,板支撐部222與被支撐部237不接觸。換言之,解除了藉由板支撐部222對頂板123之支撐、即腔室開閉 機構131之間接的對頂板123之支撐。因此,頂板123係自腔室蓋部122獨立,且與基板保持部14及保持於基板保持部14之基板9一起地,可藉由基板旋轉機構15而進行旋轉。 At this time, the flange portion 239 of the supported portion 237 is separated above the flange portion 224 of the plate supporting portion 222, and the plate supporting portion 222 is not in contact with the supported portion 237. In other words, the support of the top plate 123 by the plate supporting portion 222, that is, the opening and closing of the chamber is released. The support of the top plate 123 is connected between the mechanisms 131. Therefore, the top plate 123 is independent of the chamber cover portion 122, and is rotatable by the substrate rotating mechanism 15 together with the substrate holding portion 14 and the substrate 9 held by the substrate holding portion 14.

接著,藉由基板旋轉機構15按一定轉速(較低之轉速,以下稱為「穩態轉速」。)開始基板9的旋轉。此外,自惰性氣體供給部186(參照圖2)開始朝擴大密閉空間100供給惰性氣體(在此為氮氣),並藉由外側排氣部194開始進行擴大密閉空間100內之氣體的排出。藉此,於經過既定時間後,擴大密閉空間100成為填充有惰性氣體之惰性氣體填充狀態(亦即,氧濃度低之低氧環境氣體)。再者,朝擴大密閉空間100之惰性氣體之供給及擴大密閉空間100內之氣體之排出,也可自圖14所示之開放狀態進行。 Next, the rotation of the substrate 9 is started by the substrate rotating mechanism 15 at a constant number of revolutions (lower rotational speed, hereinafter referred to as "steady-state rotational speed"). Further, the inert gas supply unit 186 (see FIG. 2) starts to supply an inert gas (here, nitrogen gas) to the enlarged sealed space 100, and the outer exhaust portion 194 starts to expand the gas in the sealed space 100. Thereby, after a predetermined period of time has elapsed, the sealed space 100 is expanded to be an inert gas-filled state filled with an inert gas (that is, a low-oxygen atmosphere gas having a low oxygen concentration). Further, the supply of the inert gas to expand the sealed space 100 and the expansion of the gas in the sealed space 100 may be performed from the open state shown in FIG.

其次,自複數個加熱氣體供給噴嘴180朝旋轉之基板9之下面92噴出加熱之氣體。藉此,基板9被加熱。然後,自上部噴嘴181朝基板9之上表面91之中央部開始供給藥液(步驟S12)。步驟S12中之藥液之供給動作,係與上述第1實施形態同樣。 Next, the heated gas supply nozzle 180 ejects the heated gas toward the lower surface 92 of the rotating substrate 9. Thereby, the substrate 9 is heated. Then, the supply of the chemical liquid is started from the upper nozzle 181 toward the central portion of the upper surface 91 of the substrate 9 (step S12). The supply operation of the chemical liquid in step S12 is the same as in the first embodiment.

接著,腔室蓋部122及杯部161同步朝下方移動。如圖18所示,藉由腔室蓋部122之外緣部下端之唇封231與腔室側壁部214之上部接觸而將環狀開口81關閉,在與側面空間160隔絕之狀態下將腔室空間120密閉。杯部161與圖14同樣地位於退避位置。以下,稱圖18所示之處理腔室12及杯部161之狀態為「第2密閉狀態」。於第2密閉狀態下,基板9係與處理腔室12之內壁直接對向,且於這些之間不存在其他之液接取部。 Next, the chamber cover portion 122 and the cup portion 161 move in synchronization downward. As shown in FIG. 18, the annular opening 81 is closed by the lip seal 231 at the lower end of the outer edge portion of the chamber cover portion 122 in contact with the upper portion of the chamber side wall portion 214, and the cavity is closed in a state of being isolated from the side space 160. The chamber space 120 is sealed. The cup portion 161 is located at the retracted position in the same manner as in Fig. 14 . Hereinafter, the state of the processing chamber 12 and the cup portion 161 shown in Fig. 18 is referred to as "second sealed state". In the second sealed state, the substrate 9 is directly opposed to the inner wall of the processing chamber 12, and there is no other liquid receiving portion between them.

於第2密閉狀態下,也與第1密閉狀態同樣地,藉由卡盤部4之複數個爪部41朝中心軸J1按壓基板9之邊緣,牢固地 保持基板9。此外,解除了藉由板支撐部222對頂板123之保持,頂板123自腔室蓋部122獨立,與基板保持部14及基板9一起進行旋轉。 In the second sealed state, similarly to the first sealed state, the plurality of claw portions 41 of the chuck portion 4 press the edge of the substrate 9 toward the central axis J1, and firmly The substrate 9 is held. Further, the holding of the top plate 123 by the plate supporting portion 222 is released, and the top plate 123 is rotated independently from the chamber cover portion 122 together with the substrate holding portion 14 and the substrate 9.

若腔室空間120被密閉,則停止藉由外側排氣部194(參照圖2)進行之氣體之排出,並開始藉由內側排氣部198進行之腔室空間120內之氣體之排出。然後,藉由純水供給部184開始朝基板9之純水之供給(步驟S13)。步驟S13之純水之供給動作係與上述第1實施形態同樣。 When the chamber space 120 is sealed, the discharge of the gas by the outer exhaust portion 194 (see FIG. 2) is stopped, and the discharge of the gas in the chamber space 120 by the inner exhaust portion 198 is started. Then, the supply of pure water to the substrate 9 is started by the pure water supply unit 184 (step S13). The supply operation of the pure water in the step S13 is the same as that in the first embodiment.

若自純水之供給開始經過了既定時間,則停止來自純水供給部184之純水之供給。然後,自複數個加熱氣體供給噴嘴180朝基板9之下面92噴出加熱之氣體。藉此,基板9被加熱。而且,於繼續來自加熱氣體供給噴嘴180之加熱氣體之噴出之狀態下,將基板9之轉速提高至遠高於穩態轉速。藉此,藉由自基板9上除去純水,進行基板9之乾燥處理(步驟S14)。若自基板9之乾燥開始後經過既定時間,則停止基板9之旋轉。再者,也可於基板9之乾燥處理前,自上部噴嘴181朝基板9之上表面91供給IPA,於上表面91上將純水置換為IPA。此外,基板9之乾燥處理,也可於藉由內側排氣部198對腔室空間120進行減壓而低於大氣壓之減壓環境氣體中進行。 When the predetermined time has elapsed since the supply of the pure water has started, the supply of the pure water from the pure water supply unit 184 is stopped. Then, the heated gas is ejected from the plurality of heating gas supply nozzles 180 toward the lower surface 92 of the substrate 9. Thereby, the substrate 9 is heated. Further, in a state where the discharge of the heating gas from the heating gas supply nozzle 180 is continued, the rotation speed of the substrate 9 is raised to be much higher than the steady-state rotation speed. Thereby, the drying process of the substrate 9 is performed by removing pure water from the substrate 9 (step S14). When a predetermined time elapses from the start of drying of the substrate 9, the rotation of the substrate 9 is stopped. Further, before the drying process of the substrate 9, the IPA may be supplied from the upper nozzle 181 toward the upper surface 91 of the substrate 9, and the pure water may be replaced with IPA on the upper surface 91. Further, the drying process of the substrate 9 may be performed in a reduced-pressure ambient gas which is decompressed by the inner exhaust portion 198 to reduce the chamber space 120 to be lower than atmospheric pressure.

然後,藉由腔室蓋部122上昇,如圖14所示,處理腔室12成為開放狀態,頂板123相對於基板支撐部141配置於分離位置。於步驟S14中,由於頂板123與基板支撐部141一起旋轉,因此於頂板123之下面幾乎不殘留液體,從而不會有蓋部122之上昇時,液體自頂板123落下於基板9上之情況。 Then, as the chamber cover portion 122 is raised, as shown in FIG. 14, the processing chamber 12 is opened, and the top plate 123 is disposed at the separated position with respect to the substrate supporting portion 141. In step S14, since the top plate 123 rotates together with the substrate supporting portion 141, almost no liquid remains on the lower surface of the top plate 123, and liquid does not fall from the top plate 123 on the substrate 9 when the lid portion 122 rises.

此外,藉由圖16所示之錘支撐機構53之空氣汽缸531緩慢地推壓活塞桿532,使支撐構件533之前端面534與錘部51之外緣部抵接,進而沿前端面534朝上方推昇錘部51。藉此,錘部51及連結部49配置於圖15所示之位置,桿45沿上下方向大致直立,爪部41自基板9之邊緣朝外側(與中心軸J1相反側)分離。亦即,解除藉由卡盤部4對基板9之保持(步驟S15)。然後,基板9係藉由外部之搬送機構自處理腔室12搬出(步驟S16),完成藉由基板處理裝置1a對基板9之處理。實際上,上述步驟S10~S16之處理係對於其他之基板9重複地進行。 Further, the piston rod 532 is slowly pressed by the air cylinder 531 of the hammer supporting mechanism 53 shown in Fig. 16, so that the front end surface 534 of the support member 533 abuts against the outer edge portion of the weight portion 51, and further upwards along the front end surface 534. The hammer portion 51 is pushed up. Thereby, the weight portion 51 and the coupling portion 49 are disposed at the position shown in FIG. 15, the rod 45 is substantially erected in the vertical direction, and the claw portion 41 is separated from the edge of the substrate 9 toward the outside (the side opposite to the central axis J1). That is, the holding of the substrate 9 by the chuck portion 4 is released (step S15). Then, the substrate 9 is carried out from the processing chamber 12 by an external transfer mechanism (step S16), and the substrate 9 is processed by the substrate processing apparatus 1a. Actually, the processing of the above steps S10 to S16 is repeatedly performed for the other substrates 9.

然而,於基板處理裝置中,因基板9之彎曲或製造誤差等,被搬入之基板9的直徑略有變動。為了應對此種變動,於圖8所示之比較例之基板處理裝置中,配合SEMI(Semiconductor Equipment and Materials International)規格中之最大直徑的基板9,決定支撐部基部960之複數個第1接觸部961之位置及形狀、暨頂板123中之複數個第2接觸部971之位置及形狀。因此,於比較例之基板處理裝置中,若搬入較上述規格中之最大直徑小之直徑之基板9,於對該基板9之處理液之供給時、或基板9之旋轉之加減速時等,有時會有基板支撐部96上之基板9之位置變動(亦即,基板9略微移動)。於該情況下,基板9與接觸部961、971相擦而產生污染物,或者產生接觸部961、971之磨耗。此外,若基板9之位置變動較大,則恐有基板9破損之虞。再者,於比較例之基板處理裝置中,第1接觸部961之端面係調芯用之傾斜面,但即使設置此種傾斜面,也不保證一定能精度良好地對基板9進行調芯。 However, in the substrate processing apparatus, the diameter of the substrate 9 to be loaded is slightly changed due to the bending of the substrate 9, the manufacturing error, and the like. In order to cope with such a change, in the substrate processing apparatus of the comparative example shown in FIG. 8, a plurality of first contact portions of the support portion base portion 960 are determined by incorporating the substrate 9 having the largest diameter in the SEMI (Semiconductor Equipment and Materials International) standard. The position and shape of the 961 and the position and shape of the plurality of second contact portions 971 in the top plate 123. Therefore, in the substrate processing apparatus of the comparative example, when the substrate 9 having a smaller diameter than the largest diameter in the above specification is loaded, when the processing liquid of the substrate 9 is supplied, or when the substrate 9 is rotated or decelerated, There is a case where the position of the substrate 9 on the substrate supporting portion 96 is changed (that is, the substrate 9 is slightly moved). In this case, the substrate 9 is rubbed against the contact portions 961, 971 to generate contaminants or to cause abrasion of the contact portions 961, 971. Further, if the position of the substrate 9 fluctuates greatly, the substrate 9 may be damaged. Further, in the substrate processing apparatus of the comparative example, the end surface of the first contact portion 961 is an inclined surface for alignment, but even if such an inclined surface is provided, it is not guaranteed that the substrate 9 can be accurately aligned.

相對於此,於基板處理裝置1a中,設置有藉由錘支 撐機構53支撐於支撐位置之錘部51、及具有複數個爪部41及傳遞機構42之卡盤部4。若解除藉由錘支撐機構53之對錘部51之支撐,則錘部51藉由自重朝較支撐位置更下方之支撐解除位置下降,並朝下方牽拉連接於錘部51之傳遞機構42之各連結部49。傳遞機構42藉由將作用於各連結部49之力、即錘部51之重量引起之力傳遞至對應之爪部41,使複數個爪部41朝中心軸J1按壓基板9之邊緣。藉此,即使於搬入之基板9之直徑變動之情況下,利用配置於支撐解除位置之錘部51之重量,仍可實現藉由複數個爪部41自外側對基板9之保持。其結果,於對基板9之處理液之供給時、或基板9之旋轉之加減速時等,可抑制基板支撐部141上之基板9之位置變動,還可防止基板9之破損。此外,藉由複數個爪部41將基板9之中心配置在中心軸J1、亦即將基板9相對於旋轉中心進行對位,藉此可將包含基板9、基板支撐部141及頂板123之旋轉體之重心配置於中心軸J1之附近(取得平衡),從而可穩定地旋轉旋轉體。 On the other hand, in the substrate processing apparatus 1a, a hammer is provided. The baffle mechanism 53 supports the hammer portion 51 at the support position and the chuck portion 4 having the plurality of claw portions 41 and the transmission mechanism 42. When the support of the hammer portion 51 by the hammer supporting mechanism 53 is released, the hammer portion 51 is lowered by the self-weight toward the support releasing position lower than the supporting position, and the conveying mechanism 42 connected to the hammer portion 51 is pulled downward. Each connecting portion 49. The transmission mechanism 42 transmits the force caused by the force acting on each of the coupling portions 49, that is, the weight of the weight portion 51, to the corresponding claw portion 41, and the plurality of claw portions 41 press the edge of the substrate 9 toward the central axis J1. Thereby, even when the diameter of the substrate 9 to be loaded is changed, the holding of the substrate 9 from the outside by the plurality of claw portions 41 can be realized by the weight of the weight portion 51 disposed at the support releasing position. As a result, the positional variation of the substrate 9 on the substrate supporting portion 141 can be suppressed during the supply of the processing liquid to the substrate 9, or during the acceleration/deceleration of the rotation of the substrate 9, and the substrate 9 can be prevented from being damaged. Further, the center of the substrate 9 is disposed on the central axis J1 by a plurality of claw portions 41, that is, the substrate 9 is aligned with respect to the center of rotation, whereby the rotating body including the substrate 9, the substrate supporting portion 141, and the top plate 123 can be rotated. The center of gravity is disposed in the vicinity of the center axis J1 (balanced), so that the rotating body can be stably rotated.

此外,於解除基板9之保持(將基板9開放)時,只要將錘部51沿導引部即連接構件52抬起,不會對旋轉體之其他構成作用過度之力。因此,不用將旋轉體之位置錯開,可進行基板9之保持及開放。又,於卡盤部4中,由於不使用彈簧等之金屬構件,因而可容易提高基板保持部14之耐藥品性,可實現能於各式各樣之藥液環境氣體下使用之基板保持部14。 Further, when the holding of the substrate 9 is released (the substrate 9 is opened), the hammer portion 51 is lifted up along the guiding member, that is, the connecting member 52, and does not exert excessive force on the other components of the rotating body. Therefore, the substrate 9 can be held and opened without shifting the position of the rotating body. Further, since the metal member such as a spring is not used in the chuck portion 4, the chemical resistance of the substrate holding portion 14 can be easily improved, and the substrate holding portion that can be used in various chemical liquid atmospheres can be realized. 14.

於基板處理裝置1a中,基板旋轉機構15具備以中心軸J1為中心之環狀之轉子部152、及間隔間隙於徑向與轉子部152對向之環狀之定子部151。並且,基板支撐部141連接於轉子部 152,基板支撐部141及轉子部152係於處理腔室12內不與處理腔室12接觸而進行旋轉。如此,即使於無法針對設於基板支撐部141之卡盤部4傳遞電氣或壓縮空氣等之動力源之驅動力之情況下,仍可於具有上述構造之基板處理裝置1a中,使基板9相對於旋轉中心一方面進行對位一方面進行保持。 In the substrate processing apparatus 1a, the substrate rotating mechanism 15 includes an annular rotor portion 152 centered on the central axis J1, and a stator portion 151 having an annular gap that is opposed to the rotor portion 152 in the radial direction. And, the substrate supporting portion 141 is connected to the rotor portion 152. The substrate supporting portion 141 and the rotor portion 152 are rotated in the processing chamber 12 without coming into contact with the processing chamber 12. In this manner, even in the case where the driving force of the power source such as electric or compressed air is not transmitted to the chuck portion 4 provided in the substrate supporting portion 141, the substrate 9 can be made relatively in the substrate processing apparatus 1a having the above configuration. On the one hand, the alignment center is maintained on the one hand.

此外,解除了藉由錘支撐機構53之支撐時之錘部51之位置(支撐解除位置),係較藉由錘支撐機構53支撐時之錘部51之位置(支撐位置)靠近轉子部152。藉此,可抑制錘部51與轉子部152一起旋轉時之振動之產生。再者,錘部51之支撐解除位置,可作為用以使錘部51與基板9及基板支撐部141一起進行旋轉之位置。 Further, the position (support release position) of the weight portion 51 when the support by the hammer support mechanism 53 is released is closer to the rotor portion 152 than the position (support position) of the hammer portion 51 when supported by the hammer support mechanism 53. Thereby, the occurrence of vibration when the hammer portion 51 rotates together with the rotor portion 152 can be suppressed. Further, the support releasing position of the weight portion 51 can be used as a position for rotating the weight portion 51 together with the substrate 9 and the substrate supporting portion 141.

圖19為顯示卡盤部之另一例之圖。圖19之卡盤部4a之傳遞機構42a具備相對於各爪部41a而設之連結部49及複數個軸46、47。連結部49及連結部支撐部492之構造與圖15同樣。 Fig. 19 is a view showing another example of the chuck portion. The transmission mechanism 42a of the chuck portion 4a of Fig. 19 includes a coupling portion 49 and a plurality of shafts 46, 47 provided for the respective claw portions 41a. The structure of the connection portion 49 and the connection portion support portion 492 is the same as that of Fig. 15 .

圖20為顯示連結部49及複數個軸46、47之立體圖。圖20中,為便於圖示,省略了其他構成要素之圖示。如圖19所示,於支撐部基部142之內部空間143配置有朝垂直於中心軸J1之方向(圖19之橫向)延伸之軸46。軸46係藉由一對軸支撐部460而以其中心軸J2為中心可旋轉地支撐。如圖20所示,於軸46之一端部固定有朝垂直於軸46之中心軸J2之方向延伸之桿461之一端部,桿461之另一端部經由銷424連接於連結部49之上端部。於桿461形成有沿桿461之長邊方向延伸之長孔462,銷424係插入長孔462。 FIG. 20 is a perspective view showing the connecting portion 49 and the plurality of shafts 46 and 47. In FIG. 20, illustration of other components is omitted for convenience of illustration. As shown in FIG. 19, the inner space 143 of the support base 142 is provided with a shaft 46 extending in a direction perpendicular to the central axis J1 (lateral direction of FIG. 19). The shaft 46 is rotatably supported around the central axis J2 by a pair of shaft support portions 460. As shown in FIG. 20, one end of the rod 461 extending in a direction perpendicular to the central axis J2 of the shaft 46 is fixed to one end of the shaft 46, and the other end of the rod 461 is connected to the upper end of the joint portion 49 via a pin 424. . The rod 461 is formed with a long hole 462 extending in the longitudinal direction of the rod 461, and the pin 424 is inserted into the long hole 462.

如圖19所示,於支撐部基部142之內部空間143配 置有上下方向延伸之另一根軸47之下部。軸47係藉由軸支撐部470而以其中心軸J3為中心可旋轉地支撐。如圖20所示,於軸46之另一端部固定有沿垂直於軸46之中心軸J2之方向延伸之桿463之一端部,桿463之另一端部係經由銷425連接於軸47之上部。於桿463形成有沿桿463之長邊方向延伸之長孔464,銷425係插入長孔464。 As shown in FIG. 19, the inner space 143 of the base portion 142 of the support portion is matched. The lower portion of the other shaft 47 extending in the up and down direction is placed. The shaft 47 is rotatably supported around the central axis J3 by the shaft support portion 470. As shown in Fig. 20, one end of a rod 463 extending in a direction perpendicular to the central axis J2 of the shaft 46 is fixed to the other end of the shaft 46, and the other end of the rod 463 is coupled to the upper portion of the shaft 47 via a pin 425. . The rod 463 is formed with an elongated hole 464 extending in the longitudinal direction of the rod 463, and the pin 425 is inserted into the long hole 464.

圖21為顯示一個爪部41a之俯視圖,顯示沿上下方向所觀察之爪部41a。如圖19及圖21所示,爪部41a具有沿上下方向觀察之形狀為橢圓形之爪部本體411。爪部本體411之上表面412係自該橢圓形之長軸之一端朝另一端而高度逐漸減少之傾斜面。於爪部本體411之上表面412,且於高度最大之位置附近,設置有朝上方突出之突出部413。突出部413係上部之直徑較下部之直徑大之倒圓錐梯形。爪部本體411係固定於有蓋圓筒狀之爪部支撐台410之上表面。 Fig. 21 is a plan view showing one claw portion 41a showing the claw portion 41a as viewed in the up and down direction. As shown in FIGS. 19 and 21, the claw portion 41a has a claw body 411 having an elliptical shape as viewed in the vertical direction. The upper surface 412 of the claw body 411 is an inclined surface whose height gradually decreases from one end of the long axis of the ellipse toward the other end. On the upper surface 412 of the claw body 411, and in the vicinity of the position where the height is the largest, a protruding portion 413 that protrudes upward is provided. The protruding portion 413 is an inverted conical trapezoid having a diameter larger than that of the lower portion. The claw body 411 is fixed to the upper surface of the cap-shaped cylindrical support table 410.

於軸47中,除下部以外之部位係配置於支撐部基部142之內部空間143之外側,且軸47之上端部係固定於爪部支撐台410之蓋部的下面。配置於內部空間143之外側之軸47之部位之周圍,係藉由爪部支撐台410之側壁部所包圍。爪部支撐台410之側壁部與支撐部基部142之連接部,係於兩者可滑動之狀態下被密封。 In the shaft 47, the portion other than the lower portion is disposed on the outer side of the inner space 143 of the support portion base portion 142, and the upper end portion of the shaft 47 is fixed to the lower surface of the lid portion of the claw portion support base 410. The periphery of the portion of the shaft 47 disposed on the outer side of the inner space 143 is surrounded by the side wall portion of the claw support base 410. The connection portion between the side wall portion of the claw support base 410 and the support portion base portion 142 is sealed in a state where the both are slidable.

如圖19中二點鏈線所示,於藉由錘支撐機構53使錘部51位於支撐位置之狀態下,基板9之邊緣係於爪部本體411之上表面412上配置於自突出部413略微分離之位置。如圖19中實線所示,若藉由配置於支撐解除位置之錘部51之重量朝下方牽拉連結部49,則圖20所示之軸46以中心軸J2為中心進行轉動,軸 47以中心軸J3為中心進行轉動。藉此,爪部本體411以中心軸J3為中心自圖21中二點鏈線所示之旋轉位置朝向以實線所示之旋轉位置進行轉動,如圖19中實線所示,基板9略朝上方移動,並且突出部413之側面抵接於基板9之邊緣。換言之,基板9之外緣部咬入突出部413之側面與爪部本體411之上表面412所形成之凹部。實際上,作用於複數個連結部49之力分別對沿基板9之外緣配置之複數個爪部41a進行傳遞,藉由複數個爪部41a以大致相同之力朝中心軸J1按壓基板9之邊緣之不同部位。如此,於圖19所示之卡盤部4a中,利用配置於支撐解除位置之錘部51之重量,實現使基板9相對於旋轉中心一方面進行對位一方面進行保持。 As shown by the two-dot chain line in FIG. 19, the edge of the substrate 9 is placed on the upper surface 412 of the claw body 411 at the self-protruding portion 413 in a state where the hammer portion 51 is positioned at the support position by the hammer supporting mechanism 53. A slightly separated position. As shown by the solid line in Fig. 19, when the coupling portion 49 is pulled downward by the weight of the weight portion 51 disposed at the support releasing position, the shaft 46 shown in Fig. 20 is rotated about the central axis J2. 47 is rotated about the center axis J3. Thereby, the claw body 411 is rotated about the central axis J3 from the rotational position indicated by the two-dot chain line in FIG. 21 toward the rotational position indicated by the solid line, as shown by the solid line in FIG. 19, the substrate 9 is slightly The upper side is moved, and the side of the protruding portion 413 abuts against the edge of the substrate 9. In other words, the outer edge portion of the substrate 9 bites into the concave portion formed by the side surface of the protruding portion 413 and the upper surface 412 of the claw body 411. Actually, the force acting on the plurality of connecting portions 49 is transmitted to the plurality of claw portions 41a disposed along the outer edge of the substrate 9, and the plurality of claw portions 41a press the substrate 9 toward the central axis J1 with substantially the same force. Different parts of the edge. As described above, in the chuck portion 4a shown in FIG. 19, the weight of the weight portion 51 disposed at the support releasing position is used to hold the substrate 9 in alignment with respect to the rotation center.

於圖14之基板處理裝置1a中,錘支撐機構53係設於處理腔室12,但錘支撐機構也可設於處理腔室12之外部。圖22為顯示錘支撐機構之另一例之圖。圖22之錘支撐機構53a係可使支撐臂536以平行於上下方向之中心軸J4為中心進行轉動,並可使支撐臂536沿上下方向進行昇降。 In the substrate processing apparatus 1a of FIG. 14, the hammer supporting mechanism 53 is provided in the processing chamber 12, but the hammer supporting mechanism may be provided outside the processing chamber 12. Fig. 22 is a view showing another example of the hammer supporting mechanism. The hammer supporting mechanism 53a of Fig. 22 can rotate the support arm 536 about the central axis J4 parallel to the vertical direction, and can raise and lower the support arm 536 in the up and down direction.

於藉由錘支撐機構53a支撐錘部51時,處理腔室12及杯部161處於開放狀態。錘支撐機構53a將支撐臂536上昇,接著以中心軸J4為中心進行轉動,藉此,經由環狀開口81將支撐臂536配置於處理腔室12內。然後,錘支撐機構53a使支撐臂536下降,然後進行轉動,藉以將設於支撐臂536之前端之支撐構件537配置於錘部51之外緣部之下方。然後,錘支撐機構53a使支撐臂536略微上昇,藉此,錘部51藉由支撐構件537自下側支撐而被配置於支撐位置。藉此,解除藉由複數個爪部41對基板9之保持。於藉由複數個爪部41對基板9進行保持時,使支撐臂536略微下 降,藉以解除錘部51之支撐,將錘部51配置於支撐解除位置。錘支撐機構53a藉由依序進行支撐臂536之轉動、上昇、轉動,自處理腔室12取出支撐臂536。再者,錘支撐機構53a也可為使支撐臂536沿水平方向移動及於上下方向昇降者。 When the hammer portion 51 is supported by the hammer supporting mechanism 53a, the processing chamber 12 and the cup portion 161 are in an open state. The hammer supporting mechanism 53 a raises the support arm 536 and then rotates about the central axis J4 , whereby the support arm 536 is disposed in the processing chamber 12 via the annular opening 81 . Then, the hammer supporting mechanism 53a lowers the support arm 536 and then rotates, whereby the support member 537 provided at the front end of the support arm 536 is disposed below the outer edge portion of the weight portion 51. Then, the hammer supporting mechanism 53a slightly raises the support arm 536, whereby the weight portion 51 is supported by the support member 537 from the lower side and placed at the support position. Thereby, the holding of the substrate 9 by the plurality of claws 41 is released. When the substrate 9 is held by the plurality of claws 41, the support arm 536 is slightly lowered. The hammer portion 51 is placed at the support release position by releasing the support of the hammer portion 51. The hammer supporting mechanism 53a takes out the support arm 536 from the processing chamber 12 by sequentially rotating, ascending, and rotating the support arm 536. Further, the hammer supporting mechanism 53a may be configured to move the support arm 536 in the horizontal direction and to move up and down.

此外,如圖23所示,錘支撐機構53也可經由連結部49間接地支撐錘部51。於圖23所示之例子中,連結部49係較支撐部基部142之上表面突出於上方,並於連結部49之上端部設置有朝中心軸J1之相反側延伸之被支撐部498。並且,藉由錘支撐機構53之支撐構件533,自下側支撐被支撐部498,藉以將錘部51配置於支撐位置。此外,藉由解除錘支撐機構53之支撐構件533之對被支撐部498之支撐,將錘部51配置於支撐解除位置。當然,圖23所示之連結部49之被支撐部498,也可藉由圖22之錘支撐機構53a所支撐。 Further, as shown in FIG. 23, the hammer supporting mechanism 53 may also indirectly support the weight portion 51 via the connecting portion 49. In the example shown in FIG. 23, the connecting portion 49 protrudes upward from the upper surface of the supporting portion base portion 142, and a supported portion 498 extending toward the opposite side of the central axis J1 is provided at the upper end portion of the connecting portion 49. Then, the supported portion 498 is supported from the lower side by the support member 533 of the hammer supporting mechanism 53, whereby the hammer portion 51 is placed at the support position. Further, the hammer portion 51 is placed at the support release position by releasing the support of the support member 533 of the hammer support mechanism 53 against the supported portion 498. Of course, the supported portion 498 of the joint portion 49 shown in Fig. 23 can also be supported by the hammer supporting mechanism 53a of Fig. 22.

圖24為顯示第3實施形態之基板處理裝置1a之一部分之圖,顯示卡盤部4b之構成。於圖24之基板處理裝置1a中,與圖15之基板處理裝置1a比較,省略了錘部51及錘支撐機構53,並且卡盤部4b之構造係與圖15之卡盤部4不同。其他之構成係與圖15同樣,且對相同之構成,賦予相同符號。 Fig. 24 is a view showing a part of the substrate processing apparatus 1a of the third embodiment, showing the configuration of the chuck portion 4b. In the substrate processing apparatus 1a of Fig. 24, the hammer portion 51 and the hammer supporting mechanism 53 are omitted as compared with the substrate processing apparatus 1a of Fig. 15, and the structure of the chuck portion 4b is different from that of the chuck portion 4 of Fig. 15. The other components are the same as those in Fig. 15, and the same components are denoted by the same reference numerals.

與圖15之卡盤部4同樣地,圖24之卡盤部4b係設於基板支撐部141,卡盤部4b之一部分係設於以中心軸J1為中心之圓環狀之支撐部基部142之內部。圖24中,關於支撐部基部142及後述之抵接部收容部431內之一部分構成,顯示包含中心軸J1之面所構成之截面(於後述之圖25及圖26中也同樣)。卡盤部4b具備複數個爪部41及傳遞機構42b。複數個爪部41係於藉由複數 個支撐銷144所支撐之基板9之周圍沿圓周方向排列配置。 Similarly to the chuck portion 4 of Fig. 15, the chuck portion 4b of Fig. 24 is attached to the substrate supporting portion 141, and one portion of the chuck portion 4b is attached to the annular supporting portion base portion 142 centering on the central axis J1. Internal. In FIG. 24, a part of the support base portion 142 and the abutting portion accommodating portion 431 which will be described later is formed, and a cross section including the surface including the central axis J1 is displayed (the same applies to FIG. 25 and FIG. 26 which will be described later). The chuck portion 4b includes a plurality of claw portions 41 and a transmission mechanism 42b. a plurality of claws 41 are tied by plural The periphery of the substrate 9 supported by the support pins 144 is arranged in the circumferential direction.

傳遞機構42b中,取代圖15之卡盤部4中之連結部49,相對於各爪部41而設置抵接部43。抵接部43係上下方向延伸之桿構件,一部分配置於設在支撐部基部142之上表面上之抵接部收容部431內。於抵接部收容部431內設置有圓環狀之上側支撐部432及下側支撐部433,藉由上側及下側支撐部432、433可於上下方向移動地支撐抵接部43。抵接部43之下端部係配置於形成在支撐部基部142之內部空間143。抵接部43經由桿44、45連接於爪部41。桿44、45之構造係與圖15之卡盤部4同樣。 In the transmission mechanism 42b, instead of the coupling portion 49 in the chuck portion 4 of Fig. 15, the abutting portion 43 is provided for each of the claw portions 41. The abutting portion 43 is a rod member that extends in the vertical direction, and is partially disposed in the abutting portion accommodating portion 431 provided on the upper surface of the support portion base portion 142. The annular upper side support portion 432 and the lower side support portion 433 are provided in the abutting portion accommodating portion 431, and the abutting portion 43 is supported by the upper and lower side support portions 432 and 433 so as to be movable in the vertical direction. The lower end portion of the abutting portion 43 is disposed in the inner space 143 formed in the base portion 142 of the support portion. The abutting portion 43 is connected to the claw portion 41 via the rods 44 and 45. The structure of the rods 44, 45 is the same as that of the chuck portion 4 of Fig. 15.

於抵接部43安裝有以抵接部43為中心之圓板部434。圓板部434係於抵接部收容部431內配置於上側支撐部432與下側支撐部433之間。於圓板部434與下側支撐部433之間設置有圍繞抵接部43之周圍之彈簧435。藉由彈簧435朝上方對圓板部434及抵接部43賦予勢能,如圖24般,圓板部434與上側支撐部432之下面抵接。於圓板部434與上側支撐部432抵接之狀態下,桿44之桿45側之端部係較抵接部43側之端部位於下側,桿45沿上下方向大致直立。藉此,爪部41配置於自基板9之邊緣朝外側(與中心軸J1相反側)分離之位置。於抵接部43之一部分(也可為全部)設置有由橡膠等形成之彈性構件436,抵接部43係於長邊方向可略微伸縮。傳遞機構42b所包含之上述構成係相對於複數個爪部41之各個而設置。 A disc portion 434 centering on the abutting portion 43 is attached to the abutting portion 43. The disc portion 434 is disposed between the upper support portion 432 and the lower support portion 433 in the contact portion accommodating portion 431. A spring 435 surrounding the periphery of the abutting portion 43 is provided between the disc portion 434 and the lower side support portion 433. The spring plate 435 is biased upward to impart potential energy to the disc portion 434 and the abutting portion 43. As shown in Fig. 24, the disc portion 434 abuts against the lower surface of the upper support portion 432. In a state where the disc portion 434 is in contact with the upper support portion 432, the end portion of the rod 44 on the rod 45 side is located on the lower side of the end portion on the side of the abutting portion 43, and the rod 45 is substantially erected in the vertical direction. Thereby, the claw portion 41 is disposed at a position separated from the edge of the substrate 9 toward the outside (the side opposite to the central axis J1). An elastic member 436 formed of rubber or the like is provided in one part (may be all) of the abutting portion 43, and the abutting portion 43 is slightly stretchable in the longitudinal direction. The above-described configuration included in the transmission mechanism 42b is provided for each of the plurality of claw portions 41.

如圖25所示,於頂板123配置於用以與基板9及基板支撐部141一起旋轉之連結位置時,於頂板123之各卡合部241之下部之凹部242嵌入自抵接部收容部431朝上方突出之抵接部43 之上端部。藉此,頂板123與基板支撐部141之支撐部基部142連結。如此,抵接部43係兼有圖17之卡合銷140之功能。實際上,於各抵接部43之上端面、及與該上端面對向之卡合部241之凹部242內之面設置有磁鐵437、243,藉由作用於這些磁鐵437、243之間的磁力(引力),牢固地將卡合部241與抵接部43結合。 As shown in FIG. 25, when the top plate 123 is disposed at a connection position for rotating together with the substrate 9 and the substrate supporting portion 141, the concave portion 242 at the lower portion of each of the engaging portions 241 of the top plate 123 is fitted into the self-contacting portion accommodating portion 431. Abutting portion 43 protruding upward Upper end. Thereby, the top plate 123 is coupled to the support base 142 of the substrate supporting portion 141. Thus, the abutting portion 43 functions as the engaging pin 140 of FIG. Actually, the magnets 437 and 243 are provided on the surface of the upper end surface of each of the abutting portions 43 and the concave portion 242 of the engaging portion 241 opposed to the upper end surface, and act between the magnets 437 and 243. The magnetic force (gravity) firmly bonds the engaging portion 241 and the abutting portion 43.

於基板處理裝置1a中,迄卡合部241之下面與抵接部收容部431之上表面抵接為止,藉由頂板123之自重將抵接部43朝下方壓入。桿44之桿45側之端部朝較抵接部43側之端部更上側移動,於是桿45傾斜而使桿45之上端部靠近基板9。藉此,爪部41抵接於支撐銷144上之基板9之邊緣(側面),且藉由爪部41朝中心軸J1按壓該邊緣。實際上,作用於複數個抵接部43之力分別傳遞至複數個爪部41,藉由排列配置於圓周方向之複數個爪部41以大致相同之力朝中心軸J1按壓基板9之邊緣之不同部位。其結果,一方面將基板9之中心配置於中心軸J1上,一方面藉由卡盤部4b牢固地保持基板9。此外,即使於由基板支撐部141所支撐之基板9之大小(直徑)變動之情況下,藉由使抵接部43之彈性構件436之伸縮量變化,卡合部241之下面仍與抵接部收容部431之上表面抵接。因此,頂板123之下面與基板9之上表面91之間的上下方向之距離保持一定。 In the substrate processing apparatus 1a, the lower surface of the abutting portion 241 abuts against the upper surface of the abutting portion accommodating portion 431, and the abutting portion 43 is pushed downward by the weight of the top plate 123. The end portion of the rod 44 on the side of the rod 45 is moved upward toward the end portion on the side closer to the abutting portion 43, so that the rod 45 is inclined so that the upper end portion of the rod 45 is close to the substrate 9. Thereby, the claw portion 41 abuts against the edge (side surface) of the substrate 9 on the support pin 144, and the edge is pressed by the claw portion 41 toward the central axis J1. Actually, the force acting on the plurality of abutting portions 43 is transmitted to the plurality of claw portions 41, respectively, and the plurality of claw portions 41 arranged in the circumferential direction are arranged to press the edge of the substrate 9 toward the central axis J1 with substantially the same force. Different parts. As a result, on the one hand, the center of the substrate 9 is placed on the central axis J1, and on the other hand, the substrate 9 is firmly held by the chuck portion 4b. Further, even when the size (diameter) of the substrate 9 supported by the substrate supporting portion 141 fluctuates, the amount of expansion and contraction of the elastic member 436 of the abutting portion 43 is changed, and the lower surface of the engaging portion 241 is still abutted. The upper surface of the portion accommodating portion 431 abuts. Therefore, the distance between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9 is kept constant.

此外,若錘部即頂板123配置於自基板支撐部141分離之分離位置(參照圖14),則卡合部241自抵接部43朝上下方向分離,抵接部43藉由彈簧435所賦予之勢能而朝圖24所示之位置上昇。藉此,桿45沿上下方向大致直立,且爪部41自基板9之邊緣朝外側(與中心軸J1相反側)分離。亦即,解除藉由卡盤部4b 對基板9之保持。再者,由於位於分離位置之頂板123係藉由錘支撐機構即腔室開閉機構131及腔室蓋部122所支撐,因此可將該分離位置作為錘部之支撐位置。此外,由於位於連結位置之頂板123係將藉由腔室開閉機構131及腔室蓋部122之支撐(參照圖17及圖18)解除,因此可將該連結位置作為錘部之支撐解除位置。 Further, when the top plate 123, which is the weight portion, is disposed at a separated position (see FIG. 14) separated from the substrate supporting portion 141, the engaging portion 241 is separated from the abutting portion 43 in the vertical direction, and the abutting portion 43 is given by the spring 435. The potential energy rises toward the position shown in FIG. Thereby, the rod 45 is substantially erected in the up-and-down direction, and the claw portion 41 is separated from the edge of the substrate 9 toward the outside (the side opposite to the central axis J1). That is, the release by the chuck portion 4b The holding of the substrate 9. Further, since the top plate 123 at the separation position is supported by the chamber opening and closing mechanism 131 and the chamber cover portion 122, which are the hammer supporting mechanisms, the separation position can be used as the supporting position of the hammer portion. Further, since the top plate 123 at the connection position is released by the support of the chamber opening and closing mechanism 131 and the chamber cover portion 122 (see FIGS. 17 and 18), the connection position can be used as the support release position of the weight portion.

如上述,於基板處理裝置1a中,當頂板123位於連結位置時,藉由頂板123之自重沿上下方向將傳遞機構42b之各底接部43壓入。傳遞機構42b藉由將作用於各抵接部43之力傳遞至對應之爪部41,使複數個爪部41朝中心軸J1按壓基板9之邊緣。藉此,利用配置於連結位置之頂板123之自重,實現藉由複數個爪部41自外側對基板9之保持。此外,藉由複數個爪部41將基板9之中心配置在中心軸J1、亦即將基板9相對於旋轉中心進行對位,藉此可將包含基板9、基板支撐部141及頂板123之旋轉體之重心配置於中心軸J1之附近(取得平衡),從而可穩定地旋轉旋轉體。 As described above, in the substrate processing apparatus 1a, when the top plate 123 is at the connection position, the bottom portions 43 of the transmission mechanism 42b are pressed in the vertical direction by the weight of the top plate 123. The transmission mechanism 42b transmits the force acting on each of the abutting portions 43 to the corresponding claw portion 41, and causes the plurality of claw portions 41 to press the edge of the substrate 9 toward the central axis J1. Thereby, the holding of the substrate 9 from the outside by the plurality of claw portions 41 is realized by the self-weight of the top plate 123 disposed at the joint position. Further, the center of the substrate 9 is disposed on the central axis J1 by a plurality of claw portions 41, that is, the substrate 9 is aligned with respect to the center of rotation, whereby the rotating body including the substrate 9, the substrate supporting portion 141, and the top plate 123 can be rotated. The center of gravity is disposed in the vicinity of the center axis J1 (balanced), so that the rotating body can be stably rotated.

此外,於傳遞機構42b包含彈性構件436,且基板支撐部141所支撐之基板9之大小有變動之情況下,彈性構件436彈性變形。藉此,可將連結位置上之頂板123與基板9之間的距離保持一定。其結果,即使於基板9之大小變動之情況下,也可以一定之條件對基板9實施處理。再者,彈性構件436也可設於傳遞機構42b之抵接部43以外。於根據基板9之大小,允許連結位置上之頂板123與基板9之間的距離略微變動之情況下,也可於傳遞機構中省略上述彈性構件。 Further, when the transmission mechanism 42b includes the elastic member 436 and the size of the substrate 9 supported by the substrate support portion 141 varies, the elastic member 436 is elastically deformed. Thereby, the distance between the top plate 123 and the substrate 9 at the joint position can be kept constant. As a result, even when the size of the substrate 9 fluctuates, the substrate 9 can be processed under certain conditions. Further, the elastic member 436 may be provided outside the abutting portion 43 of the transmission mechanism 42b. In the case where the distance between the top plate 123 and the substrate 9 at the connection position is allowed to vary slightly depending on the size of the substrate 9, the elastic member may be omitted in the transmission mechanism.

於將頂板123作為錘部利用之圖24之基板處理裝置1a中,由於不需要如圖14之基板處理裝置1a般另外設置錘部51 及錘支撐機構53,因此可簡化基板處理裝置1a之構造。另一方面,於具有錘部51及錘支撐機構53之圖14之基板處理裝置1a中,可省略頂板123,並於基板9之上方配置清洗掃描噴嘴或上表面91之毛刷等。 In the substrate processing apparatus 1a of FIG. 24 in which the top plate 123 is used as the weight portion, the hammer portion 51 is not separately provided as in the substrate processing apparatus 1a of FIG. Since the hammer supporting mechanism 53 is used, the configuration of the substrate processing apparatus 1a can be simplified. On the other hand, in the substrate processing apparatus 1a of FIG. 14 having the weight portion 51 and the hammer supporting mechanism 53, the top plate 123 can be omitted, and a brush for cleaning the scanning nozzle or the upper surface 91 or the like can be disposed above the substrate 9.

圖26為顯示卡盤部之另一例之圖。於圖26之卡盤部4c之傳遞機構42c中,取代圖19之卡盤部4a之連結部49,設置與圖24及圖25同樣之抵接部43。 Fig. 26 is a view showing another example of the chuck portion. In the transmission mechanism 42c of the chuck portion 4c of Fig. 26, an abutting portion 43 similar to that of Figs. 24 and 25 is provided instead of the coupling portion 49 of the chuck portion 4a of Fig. 19.

於頂板123位於分離位置,且如圖26中二點鏈線所示,藉由彈簧435所賦予之勢能而使圓板部434與上側支撐部432之下面抵接之狀態下,基板9之邊緣係於爪部本體411之上表面412上配置於自突出部413略微分離之位置。如圖26中實線所示,若藉由位於連結位置之頂板123之自重朝下方壓入抵接部43,則軸46以中心軸J2為中心進行轉動,軸47及爪部本體411以中心軸J3為中心進行轉動。藉此,如圖26中實線所示,基板9略朝上方移動,並且突出部413之側面抵接於基板9之邊緣。實際上,作用於複數個抵接部43之力分別對沿基板9之外緣配置之複數個爪部41a進行傳遞,藉由複數個爪部41a以大致相同之力朝中心軸J1按壓基板9之邊緣之不同部位。如此,於圖26所示之卡盤部4c中,利用配置於連結位置之頂板123之重量,實現使基板9相對於旋轉中心一方面進行對位一方面進行保持。 The top plate 123 is located at the separated position, and as shown by the two-dot chain line in FIG. 26, the edge of the substrate 9 is brought into contact with the lower surface of the upper support portion 432 by the potential energy imparted by the spring 435. It is disposed on the upper surface 412 of the claw body 411 at a position slightly separated from the protruding portion 413. As shown by the solid line in Fig. 26, when the abutting portion 43 is pressed downward by the self-weight of the top plate 123 at the joint position, the shaft 46 is rotated about the central axis J2, and the shaft 47 and the claw body 411 are centered. The shaft J3 is rotated about the center. Thereby, as shown by the solid line in FIG. 26, the substrate 9 is slightly moved upward, and the side surface of the protruding portion 413 abuts against the edge of the substrate 9. Actually, the force acting on the plurality of abutting portions 43 is transmitted to the plurality of claw portions 41a disposed along the outer edge of the substrate 9, and the plurality of claw portions 41a press the substrate 9 toward the central axis J1 with substantially the same force. Different parts of the edge. As described above, in the chuck portion 4c shown in FIG. 26, the weight of the top plate 123 disposed at the connection position is used to hold the substrate 9 on the one hand with respect to the rotation center.

圖27為進而顯示卡盤部之又一例之圖。圖27之卡盤部4d係設於錘部即頂板123。圖27中,關於頂板123及抵接部收容部431內之構成之一部分,顯示包含中心軸J1之面而構成之截面。卡盤部4d具備複數個爪部41及傳遞機構42d。於沿中心軸J1 觀察之情況下,複數個爪部41係配置於基板9之周圍。傳遞機構42d具有近似於將圖24之傳遞機構42b上下反轉者之構造。 Fig. 27 is a view showing still another example of the chuck portion. The chuck portion 4d of Fig. 27 is attached to the top plate 123 which is a hammer portion. In FIG. 27, a cross section including a surface including the central axis J1 is displayed on one of the configurations of the top plate 123 and the contact portion accommodating portion 431. The chuck portion 4d includes a plurality of claw portions 41 and a transmission mechanism 42d. On the central axis J1 In the case of observation, a plurality of claw portions 41 are disposed around the substrate 9. The transmission mechanism 42d has a configuration similar to that of the transmission mechanism 42b of Fig. 24 upside down.

具體而言,傳遞機構42d具備相對於各爪部41而設置之抵接部43及複數個桿44、45。抵接部43係藉由上側支撐部432及下側支撐部433可於上下方向移動地支撐。於頂板123之下面設置有大致筒狀之抵接部收容部431,下側支撐部433係設於抵接部收容部431內。抵接部43之上端部係配置於形成在頂板123之內部空間124。於該內部空間124配置有桿44,桿44之一端部經由銷421連接於抵接部43之上端部。於桿44形成有沿桿44之長邊方向延伸之長孔441,銷421係插入長孔441。桿44係藉由桿支撐部440,以垂直於圖27之紙面之旋轉軸為中心而可旋轉地支撐。 Specifically, the transmission mechanism 42 d includes a contact portion 43 provided with respect to each of the claw portions 41 and a plurality of rods 44 and 45 . The abutting portion 43 is supported by the upper support portion 432 and the lower support portion 433 so as to be movable in the vertical direction. A substantially cylindrical abutting portion accommodating portion 431 is provided on the lower surface of the top plate 123, and the lower supporting portion 433 is provided in the abutting portion accommodating portion 431. The upper end portion of the abutting portion 43 is disposed in the inner space 124 formed in the top plate 123. A rod 44 is disposed in the internal space 124, and one end of the rod 44 is connected to the upper end portion of the abutting portion 43 via a pin 421. The rod 44 is formed with a long hole 441 extending in the longitudinal direction of the rod 44, and the pin 421 is inserted into the long hole 441. The rod 44 is rotatably supported by the rod supporting portion 440 around a rotation axis perpendicular to the paper surface of Fig. 27.

桿44之另一端部經由銷422連接於另一個桿45之上端部。於桿45形成有沿桿45之長邊方向延伸之長孔451,銷422係插入長孔451。桿45係藉由桿支撐部450,以垂直於圖27之紙面之旋轉軸為中心而可旋轉地支撐。於桿45上,較桿支撐部450靠下側之部分係配置於頂板123之內部空間124之外側。桿支撐部450之下側附近的桿45之部位之周圍,係藉由隔膜密閉427所覆蓋。於桿45之下端部安裝有爪部41。 The other end of the rod 44 is coupled to the upper end of the other rod 45 via a pin 422. The rod 45 is formed with an elongated hole 451 extending in the longitudinal direction of the rod 45, and the pin 422 is inserted into the long hole 451. The rod 45 is rotatably supported by the rod supporting portion 450 around a rotation axis perpendicular to the paper surface of Fig. 27. The portion of the rod 45 that is lower than the rod support portion 450 is disposed on the outer side of the inner space 124 of the top plate 123. The periphery of the portion of the rod 45 near the lower side of the rod support portion 450 is covered by the diaphragm seal 427. A claw portion 41 is attached to the lower end portion of the rod 45.

安裝於抵接部43上之圓板部434,係配置於上側支撐部432與下側支撐部433之間。於圓板部434與上側支撐部432之間設置有圍繞抵接部43之周圍之彈簧435。藉由此彈簧435,朝下方對圓板部434及抵接部43賦予勢能。頂板123位於分離位置,於如圖27中二點鏈線所示圓板部434與下側支撐部433之上表面抵接之狀態下,桿45之相對於上下方向之傾斜角變小,爪部41自 基板9之邊緣朝外側分離。 The disc portion 434 attached to the abutting portion 43 is disposed between the upper support portion 432 and the lower support portion 433. A spring 435 surrounding the periphery of the abutting portion 43 is provided between the disc portion 434 and the upper side support portion 432. By the spring 435, potential energy is applied to the disc portion 434 and the abutting portion 43 downward. The top plate 123 is located at the separated position, and in a state where the disc portion 434 abuts against the upper surface of the lower support portion 433 as indicated by the two-dot chain line in FIG. 27, the inclination angle of the rod 45 with respect to the up and down direction becomes small, and the claw is small. Department 41 from The edges of the substrate 9 are separated toward the outside.

於支撐部基部142之上表面設置有朝上方突出之卡合部241a,當頂板123位於連結位置時,自抵接部收容部431朝下方突出之抵接部43之下端部嵌合於卡合部241a之上部之凹部242a。藉此,頂板123與基板支撐部141連結。此外,如圖27中實線所示,迄卡合部241a之上表面與抵接部收容部431之下面抵接為止,藉由基板支撐部141將抵接部43朝上方壓入。藉此,桿45傾斜而使桿45之下端部靠近基板9,爪部41抵接於基板9之邊緣。實際上,作用於複數個抵接部43之力分別傳遞至沿基板9之外緣配置之複數個爪部41,藉由複數個爪部41朝中心軸J1按壓基板9之邊緣之不同部位。如此,於圖27所示之卡盤部4d中,利用配置於連結位置之頂板123之重量,實現使基板9相對於旋轉中心一方面進行對位一方面進行保持。再者,根據防止自基板9之上表面91飛散之處理液因連接於爪部之傳遞機構之構成要素而彈回並附著於上表面91之觀點,卡盤部較佳為設置於基板支撐部141。 An engaging portion 241a that protrudes upward is provided on the upper surface of the base portion 142 of the support portion. When the top plate 123 is at the connecting position, the lower end portion of the abutting portion 43 that protrudes downward from the abutting portion accommodating portion 431 is fitted to the engaging portion. a concave portion 242a at an upper portion of the portion 241a. Thereby, the top plate 123 is coupled to the substrate supporting portion 141. Further, as shown by the solid line in FIG. 27, the upper surface of the engaging portion 241a abuts against the lower surface of the abutting portion accommodating portion 431, and the abutting portion 43 is pushed upward by the substrate supporting portion 141. Thereby, the rod 45 is inclined such that the lower end portion of the rod 45 is close to the substrate 9, and the claw portion 41 abuts against the edge of the substrate 9. Actually, the force acting on the plurality of abutting portions 43 is transmitted to the plurality of claw portions 41 disposed along the outer edge of the substrate 9, and the plurality of claw portions 41 press the different portions of the edge of the substrate 9 toward the central axis J1. As described above, in the chuck portion 4d shown in FIG. 27, the weight of the top plate 123 disposed at the connection position is used to hold the substrate 9 on the one hand with respect to the rotation center. Further, the chuck portion is preferably provided on the substrate supporting portion from the viewpoint of preventing the processing liquid scattered from the upper surface 91 of the substrate 9 from being bounced back and attached to the upper surface 91 by the constituent elements of the transmission mechanism connected to the claw portion. 141.

上述基板處理裝置1a中,可進行各種之變形。 In the substrate processing apparatus 1a described above, various modifications can be made.

作為將作用於連結部49或抵接部43之力傳遞至複數個爪部之傳遞機構,也可採用上述以外之各式各樣之構造。例如,也可於圖19所示之傳遞機構42a中,於軸46之軸47側之端部形成陽螺紋,且與設於軸47之陰螺紋螺合(於圖26中也同樣)。該情況下,藉由連結部49於上下方向移動,軸46以中心軸J2為中心進行旋轉,軸47於沿基板9之上表面91之方向(圖19之左右方向)直線移動。此外,傳遞機構除僅將作用於對各爪部而設之連結部49或抵接部43之力傳遞至該爪部之構造以外,也可為將作用於一個 或複數個連結部49或者一個或複數個抵接部43之力連動地傳遞至複數個爪部之構造。 As the transmission mechanism that transmits the force acting on the coupling portion 49 or the abutting portion 43 to the plurality of claw portions, various configurations other than the above may be employed. For example, in the transmission mechanism 42a shown in Fig. 19, a male screw may be formed at an end portion of the shaft 46 on the side of the shaft 47, and screwed to a female screw provided on the shaft 47 (the same applies to Fig. 26). In this case, the shaft 46 is rotated about the central axis J2 by the movement of the connecting portion 49 in the vertical direction, and the shaft 47 linearly moves in the direction along the upper surface 91 of the substrate 9 (the horizontal direction in FIG. 19). Further, the transmission mechanism may function only in addition to the configuration in which the force acting on the coupling portion 49 or the abutting portion 43 provided for each claw portion is transmitted to the claw portion. The configuration of the plurality of connecting portions 49 or the plurality of abutting portions 43 is transmitted to the plurality of claw portions in conjunction with each other.

於圖25至圖27之例中,藉由密閉空間開閉機構即腔室開閉機構131兼作支撐錘部即頂板123之錘支撐機構(之一部分),將基板處理裝置1a之構造簡化,但也可將支撐頂板123之錘支撐機構與腔室開閉機構131分開設置。 In the example of FIG. 25 to FIG. 27, the chamber opening and closing mechanism 131, which is a closed space opening and closing mechanism, also serves as a hammer supporting mechanism (one part) of the top plate 123 that supports the weight portion, and the structure of the substrate processing apparatus 1a is simplified. The hammer supporting mechanism supporting the top plate 123 is provided separately from the chamber opening and closing mechanism 131.

此外,也可藉由腔室開閉機構131使腔室蓋部122對於腔室本體121相對地昇降,也可使腔室本體121相對於位置固定之腔室蓋部122進行昇降。於該情況下,也藉由使腔室本體121上昇而使腔室本體121之上端部靠近或抵接於腔室蓋部122,使頂板123與腔室蓋部122成為非接觸狀態,進而配置於支撐解除位置(連結位置)(參照圖17或圖18)。此外,藉由使腔室本體121下降而自腔室蓋部122分離,使頂板123自位於腔室本體121之上方之腔室蓋部122之一部分懸吊而配置於支撐位置(分離位置)(參照圖14)。 Further, the chamber lid portion 122 may be raised and lowered relative to the chamber body 121 by the chamber opening and closing mechanism 131, and the chamber body 121 may be raised and lowered with respect to the positionally fixed chamber lid portion 122. In this case, the upper end portion of the chamber body 121 is brought close to or abuts against the chamber cover portion 122 by raising the chamber body 121, so that the top plate 123 and the chamber cover portion 122 are brought into a non-contact state, and further configured. At the support release position (connection position) (refer to Fig. 17 or Fig. 18). Further, by lowering the chamber body 121, the chamber cover portion 122 is separated from the chamber cover portion 122, and the top plate 123 is partially suspended from the chamber cover portion 122 located above the chamber body 121 to be disposed at the support position (separation position) ( Refer to Figure 14).

進而,根據基板處理裝置1a之設計,也可將圖15之卡盤部4及圖19之卡盤部4a中之錘部51設於支撐部基部142之上方或側面。如上述,於基板處理裝置1a中,可於任意之位置設置可配置於第1相對位置與第2相對位置之錘部,該第1相對位置係於上下方向相對於基板支撐部141而不同之位置,該第2相對位置係較該第1相對位置靠上方之位置。此外,藉由錘支撐機構支撐錘部而將錘部配置於第2相對位置,藉由解除錘部之支撐,將錘部配置於用以與基板9及基板支撐部141一起旋轉之第1相對位置。並且,位於第1相對位置之錘部之重量引起之力,藉由傳遞機構傳遞至複數個爪部,藉此,實現使基板9相對於旋轉中心一方面進行 對位一方面進行保持。 Further, depending on the design of the substrate processing apparatus 1a, the chuck portion 4 of FIG. 15 and the hammer portion 51 of the chuck portion 4a of FIG. 19 may be provided above or to the side surface of the support portion base portion 142. As described above, in the substrate processing apparatus 1a, the weight portion that can be disposed at the first relative position and the second relative position can be provided at any position, and the first relative position is different from the substrate supporting portion 141 in the vertical direction. The second relative position is a position above the first relative position. Further, the hammer portion is supported by the hammer supporting mechanism to arrange the weight portion at the second relative position, and by releasing the support of the hammer portion, the hammer portion is disposed in the first relative rotation for rotation with the substrate 9 and the substrate supporting portion 141. position. Further, the force caused by the weight of the weight portion located at the first relative position is transmitted to the plurality of claw portions by the transmission mechanism, whereby the substrate 9 is made on the one hand with respect to the rotation center. The position is maintained on the one hand.

於基板處理裝置1a中,也可設置僅與基板9之上表面91之外緣部對向之圓環板狀之構件作為上表面對向部。於該情況也是於將處理液供給於旋轉之基板9之處理中,藉由配置於連結位置之上述圓環板狀之構件來防止自基板9之外緣部飛散之處理液於處理腔室12之內壁被彈回而再次附著於基板9之上表面91。如此,根據防止處理液之再附著之觀點,於基板處理裝置1a中,較佳為設置有與基板9之上表面91之至少外緣部對向之上表面對向部。 In the substrate processing apparatus 1a, a member having only an annular plate shape opposed to the outer edge portion of the upper surface 91 of the substrate 9 may be provided as the upper surface opposing portion. In this case, in the process of supplying the processing liquid to the rotating substrate 9, the processing liquid which is scattered from the outer edge portion of the substrate 9 is prevented from being processed in the processing chamber 12 by the annular plate-shaped member disposed at the connection position. The inner wall is springed back and attached to the upper surface 91 of the substrate 9 again. As described above, in the substrate processing apparatus 1a, it is preferable to provide the upper surface facing portion opposite to the outer edge portion of the upper surface 91 of the substrate 9 in view of preventing the reattachment of the processing liquid.

基板旋轉機構15之定子部151及轉子部152之形狀及構造,也可進行各式各樣之變更。例如,也可於轉子部152之內側(中心軸J側)設置定子部151。轉子部152不一定要以懸浮狀態進行旋轉,也可於處理腔室12內設置機械式地支撐轉子部152之導引等之構造,也可使轉子部152沿該導引旋轉。於具有中空馬達之基板處理裝置1a中,藉由基板支撐部141及錘部51係以中心軸J1為中心之環狀,可容易地將下部噴嘴182及複數個加熱氣體供給噴嘴180配置於與基板9之下面92對向之位置。此外,基板旋轉機構15不一定要為中空馬達,例如,也可利用使固定於圓板狀之基板支撐部141下面之軸旋轉之基板旋轉機構。 The shape and structure of the stator portion 151 and the rotor portion 152 of the substrate rotating mechanism 15 can be variously changed. For example, the stator portion 151 may be provided inside the rotor portion 152 (on the side of the center axis J). The rotor portion 152 does not have to be rotated in a suspended state, and a structure for mechanically supporting the guide of the rotor portion 152 or the like may be provided in the processing chamber 12, and the rotor portion 152 may be rotated along the guide. In the substrate processing apparatus 1a having a hollow motor, the substrate support portion 141 and the weight portion 51 are annularly centered on the central axis J1, and the lower nozzle 182 and the plurality of heating gas supply nozzles 180 can be easily disposed and arranged. The lower surface 92 of the substrate 9 is opposite the position. Further, the substrate rotating mechanism 15 is not necessarily required to be a hollow motor, and for example, a substrate rotating mechanism that rotates a shaft fixed to the lower surface of the disk-shaped substrate supporting portion 141 may be used.

於基板處理裝置1a中,基板支撐部141、基板旋轉機構15之轉子部152、錘部51(或錘部即頂板123)及卡盤部4、4a~4d係設於密閉空間形成部即處理腔室12內,於密閉之內部空間對基板9進行處理,但根據基板處理裝置之設計,也可於開放之空間內對基板9進行處理。 In the substrate processing apparatus 1a, the substrate supporting portion 141, the rotor portion 152 of the substrate rotating mechanism 15, the weight portion 51 (or the top plate 123 of the weight portion), and the chuck portions 4, 4a to 4d are disposed in the sealed space forming portion. The substrate 9 is processed in the sealed internal space in the chamber 12, but the substrate 9 can be processed in an open space depending on the design of the substrate processing apparatus.

於基板處理裝置1a中處理之基板,不限於半導體基板,也可為玻璃基板或其他之基板。 The substrate processed in the substrate processing apparatus 1a is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.

上述實施形態及各變形例之構成,只要不相互矛盾,即可適宜地組合。 The configurations of the above-described embodiments and modifications may be combined as appropriate without any contradiction.

以上詳細地對發明進行了說明,但已敘述之說明僅為例示而已,非用來限制本發明。因此,只要未超出本發明之實質範圍,即可進行多種之變形及變更。 The invention has been described in detail above, but the description thereof is merely illustrative and not intended to limit the invention. Therefore, various modifications and changes can be made without departing from the spirit and scope of the invention.

4‧‧‧卡盤部 4‧‧‧ chuck department

9‧‧‧基板 9‧‧‧Substrate

41‧‧‧爪部 41‧‧‧ claws

42‧‧‧傳遞機構 42‧‧‧Transmission agency

43‧‧‧抵接部 43‧‧‧Apartment

44‧‧‧桿 44‧‧‧ pole

45‧‧‧桿 45‧‧‧ rod

91‧‧‧上面 91‧‧‧above

123‧‧‧頂板 123‧‧‧ top board

141‧‧‧基板支撐部 141‧‧‧Substrate support

142‧‧‧支撐部基部 142‧‧‧Support base

144‧‧‧支撐銷 144‧‧‧Support pins

241‧‧‧卡合部 241‧‧‧Care Department

242‧‧‧凹部 242‧‧‧ recess

243‧‧‧磁鐵 243‧‧‧ Magnet

431‧‧‧抵接部收容部 431‧‧‧Abutment Department

432‧‧‧上側支撐部 432‧‧‧Upper support

434‧‧‧圓板部 434‧‧‧round board

436‧‧‧彈性構件 436‧‧‧Flexible components

437‧‧‧磁鐵 437‧‧‧ Magnet

Claims (13)

一種基板處理裝置,其為對基板進行處理者,其具備有:基板支撐部,其在將基板之一側之主表面即上表面朝向上側之狀態下自下側支撐上述基板;旋轉機構,其使上述基板支撐部以垂直於上述基板之中心軸為中心進行旋轉;上表面對向部,其對向於上述上表面之至少外緣部;對向部支撐機構,其以選擇之方式將上述上表面對向部配置在相對於上述基板支撐部而於上述基板支撐部之上方產生分離之分離位置、及與上述基板支撐部產生連結之連結位置;及卡盤部,其設置在上述基板支撐部或者上述上表面對向部之一側,上述卡盤部係具備有:至少3個爪部,其等在沿著上述中心軸而進行觀察之情況下,配置在上述基板之周圍;及傳遞機構,其包含有於上述上表面對向部位在上述連結位置之時藉由上述基板支撐部或者上述上表面對向部之另一側而被壓入之抵接部,且藉由將作用於上述抵接部之力加以傳遞至上述至少3個爪部,使上述至少3個爪部以朝向上述中心軸之方式按壓上述基板之邊緣。 A substrate processing apparatus for processing a substrate, comprising: a substrate supporting portion that supports the substrate from a lower side in a state in which an upper surface of a main surface on one side of the substrate faces upward; and a rotating mechanism The substrate supporting portion is rotated about a central axis perpendicular to the substrate; the upper surface facing portion is opposite to at least an outer edge portion of the upper surface; and the opposite portion supporting mechanism is configured to selectively a top surface opposing portion is disposed at a separation position at a position above the substrate supporting portion with respect to the substrate supporting portion, and a connection position at which the substrate supporting portion is coupled to the substrate supporting portion; and a chuck portion provided on the substrate supporting portion The chuck portion is provided on one side of the upper surface facing portion, and the chuck portion includes at least three claw portions that are disposed around the substrate when viewed along the central axis; and The mechanism includes: when the upper surface opposing portion is at the connecting position, being pressed by the substrate supporting portion or the other side of the upper surface opposing portion The abutting portion transmits the force acting on the abutting portion to the at least three claw portions, and the at least three claw portions press the edge of the substrate so as to face the central axis. 如申請專利範圍第1項之基板處理裝置,其中,上述傳遞機構係包含有彈性構件,且在被上述基板支撐部所支撐之基板的大小產生變動之情況下,藉由上述彈性構件產生彈性變形,將在上述連結位置上之上述上表面 對向部與上述基板之間的距離加以保持為一定。 The substrate processing apparatus according to claim 1, wherein the transmission mechanism includes an elastic member, and the elastic member is elastically deformed when a size of the substrate supported by the substrate supporting portion fluctuates. , the upper surface to be on the above joint position The distance between the opposing portion and the substrate is kept constant. 如申請專利範圍第1項之基板處理裝置,其中,上述旋轉機構係具備有:轉子部,其為以上述中心軸為中心之環狀,且包含有永久磁鐵;及定子部,其為與上述轉子部而對向於以上述中心軸為中心之徑向的環狀,且在與上述轉子部之間產生以上述中心軸為中心之旋轉力,上述轉子部係與上述基板支撐部產生連接。 The substrate processing apparatus according to claim 1, wherein the rotating mechanism includes a rotor portion having a ring shape centering on the central axis and including a permanent magnet, and a stator portion that is the same as the above The rotor portion is opposed to a radial ring shape centering on the central axis, and a rotational force centering on the central axis is generated between the rotor portion and the rotor portion, and the rotor portion is coupled to the substrate supporting portion. 如申請專利範圍第3項之基板處理裝置,其中,更進一步具備有供對上述基板進行處理之形成有被密閉之內部空間的密閉空間形成部,上述基板支撐部、上述旋轉機構之上述轉子部、上述上表面對向部及上述卡盤部係配置在上述密閉空間形成部內。 The substrate processing apparatus according to claim 3, further comprising: a sealed space forming portion in which the sealed internal space is formed to process the substrate, the substrate supporting portion and the rotor portion of the rotating mechanism The upper surface opposing portion and the chuck portion are disposed in the sealed space forming portion. 如申請專利範圍第4項之基板處理裝置,其中,上述密閉空間形成部係具備有:具有上部開口之腔室本體、及將上述腔室本體之上述上部開口加以封閉之腔室蓋部,上述腔室蓋部係亦為上述對向部支撐機構之一部分,上述腔室蓋部係相對於上述腔室本體以相對之方式進行昇降,於上述上表面對向部位在上述分離位置之時,上述上表面對向部係自位在上述腔室本體之上方的上述腔室蓋部之一部分而懸垂,於上述上表面對向部位在上述連結位置之時,上述上表面對向部係與抵接或者靠近於上述腔室本體之上述腔室蓋部呈非接觸狀態。 The substrate processing apparatus according to claim 4, wherein the sealed space forming unit includes: a chamber main body having an upper opening; and a chamber cover portion that closes the upper opening of the chamber main body, The chamber cover portion is also a part of the opposite portion supporting mechanism, and the chamber cover portion is raised and lowered relative to the chamber body in a relative manner, when the upper surface facing portion is at the separated position, The upper surface opposing portion is suspended from a portion of the chamber cover portion above the chamber body, and the upper surface facing portion is abutted when the upper surface facing portion is at the connecting position Or the chamber cover portion adjacent to the chamber body is in a non-contact state. 如申請專利範圍第1至5項中任一項之基板處理裝置,其中,更進一步具備有對上述上表面對向部與上述基板之上述上表面之間供給既定之藥液之噴嘴,該上表面對向部係於位在上述連結位置時,以覆蓋上述基板之方式沿著上述上表面擴展。 The substrate processing apparatus according to any one of claims 1 to 5, further comprising: a nozzle for supplying a predetermined chemical solution between the upper surface opposing portion and the upper surface of the substrate; When the surface opposing portion is in the above-described connection position, it spreads along the upper surface so as to cover the substrate. 一種基板處理裝置,其為對基板進行處理者,其具備有:基板支撐部,其在將一側之主表面即上表面朝向上側之狀態下自下側支撐基板;旋轉機構,其使上述基板支撐部以垂直於上述基板之中心軸為中心進行旋轉;錘部,其可配置在第1相對位置與第2相對位置,該第1相對位置係為於上下方向相對於上述基板支撐部而所不同之位置,該第2相對位置係較上述第1相對位置為更靠上方;錘支撐機構,其藉由支撐上述錘部而將上述錘部配置在上述第2相對位置,藉由解除上述錘部之支撐,使上述錘部位在用於與上述基板及上述基板支撐部一起旋轉之上述第1相對位置;及卡盤部,其設置在上述基板支撐部或者上述錘部,上述卡盤部係具備有:至少3個爪部,其等在沿著上述中心軸而進行觀察之情況下,配置在上述基板之周圍;及傳遞機構,其將藉由位在上述第1相對位置之上述錘部的重量所引起之力加以傳遞至上述至少3個爪部,使上述至少3個爪部以朝向上述中心軸之方式按壓上述基板之邊緣。 A substrate processing apparatus for processing a substrate, comprising: a substrate supporting portion that supports the substrate from a lower side in a state in which a main surface on one side is an upper surface; and a rotating mechanism that causes the substrate The support portion is rotated about a central axis perpendicular to the substrate; the weight portion is disposed at a first relative position and a second relative position, wherein the first relative position is in the vertical direction with respect to the substrate supporting portion In the different position, the second relative position is higher than the first relative position; and the hammer supporting mechanism is configured to dispose the hammer portion by the hammer portion and arrange the hammer portion at the second relative position Supporting the first portion of the hammer portion for rotating with the substrate and the substrate supporting portion; and the chuck portion provided on the substrate supporting portion or the hammer portion, the chuck portion The method includes: at least three claw portions arranged to be disposed around the substrate when viewed along the central axis; and a transmission mechanism that is positioned at the first A force caused by the weight of the weight portion to be transmitted to a position of said at least three claw portions, so that the at least three claw portions toward the central axis so as to press the edge of the substrate. 如申請專利範圍第7項之基板處理裝置,其中,上述旋轉機構係具備有: 轉子部,其為以上述中心軸為中心之環狀,且包含有永久磁鐵;及定子部,其為與上述轉子部而對向於以上述中心軸為中心之徑向的環狀,且在與上述轉子部之間產生以上述中心軸為中心之旋轉力,上述轉子部係與上述基板支撐部產生連接。 The substrate processing apparatus of claim 7, wherein the rotating mechanism is provided with: a rotor portion having an annular shape centering on the central axis and including a permanent magnet; and a stator portion that is annular with respect to the rotor portion in a radial direction about the central axis, and A rotational force centering on the central axis is generated between the rotor portion, and the rotor portion is coupled to the substrate support portion. 如申請專利範圍第8項之基板處理裝置,其中,上述錘部係配置在上述基板支撐部與配置在上述基板支撐部之下方的上述轉子部之間,且沿著連接上述基板支撐部與上述轉子部的防護部而能夠於上述上下方向產生移動,上述卡盤部係設置在上述基板支撐部。 The substrate processing apparatus according to claim 8, wherein the hammer portion is disposed between the substrate supporting portion and the rotor portion disposed below the substrate supporting portion, and is connected to the substrate supporting portion and The guard portion of the rotor portion is movable in the vertical direction, and the chuck portion is provided on the substrate support portion. 如申請專利範圍第9項之基板處理裝置,其中,上述基板支撐部及上述錘部係為以上述中心軸為中心之環狀。 The substrate processing apparatus according to claim 9, wherein the substrate supporting portion and the hammer portion are annularly formed around the central axis. 如申請專利範圍第9項之基板處理裝置,其中,於藉由上述錘支撐機構所進行之支撐被解除之時之上述錘部的位置,係較藉由上述錘支撐機構所進行之支撐之時之上述錘部的位置為更靠近上述轉子部。 The substrate processing apparatus of claim 9, wherein the position of the hammer portion when the support by the hammer supporting mechanism is released is lower than the support by the hammer supporting mechanism The position of the hammer portion is closer to the rotor portion. 如申請專利範圍第8至11項中任一項之基板處理裝置,其中,更進一步具備有供對上述基板進行處理之形成有被密閉之內部空間的密閉空間形成部,上述基板支撐部、上述旋轉機構之上述轉子部、上述錘部及上述卡盤部係配置在上述密閉空間形成部內。 The substrate processing apparatus according to any one of claims 8 to 11, further comprising a sealed space forming portion in which the sealed internal space is formed for processing the substrate, the substrate supporting portion, and the substrate supporting portion The rotor portion, the hammer portion, and the chuck portion of the rotating mechanism are disposed in the sealed space forming portion. 如申請專利範圍第12項之基板處理裝置,其中,上述錘支撐機構係設置在上述密閉空間形成部。 The substrate processing apparatus according to claim 12, wherein the hammer supporting mechanism is provided in the sealed space forming portion.
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