TWI540192B - A heat-fusing agent sheet for a laminated polishing pad, and a support layer for a bonding layer - Google Patents
A heat-fusing agent sheet for a laminated polishing pad, and a support layer for a bonding layer Download PDFInfo
- Publication number
- TWI540192B TWI540192B TW101114129A TW101114129A TWI540192B TW I540192 B TWI540192 B TW I540192B TW 101114129 A TW101114129 A TW 101114129A TW 101114129 A TW101114129 A TW 101114129A TW I540192 B TWI540192 B TW I540192B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- melt adhesive
- hot
- polyester
- polishing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims description 113
- 239000010410 layer Substances 0.000 claims description 131
- 239000004831 Hot glue Substances 0.000 claims description 66
- 239000012790 adhesive layer Substances 0.000 claims description 59
- 229920000728 polyester Polymers 0.000 claims description 39
- 239000003822 epoxy resin Substances 0.000 claims description 32
- 229920000647 polyepoxide Polymers 0.000 claims description 32
- 229920001225 polyester resin Polymers 0.000 claims description 26
- 239000004645 polyester resin Substances 0.000 claims description 26
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- 239000011496 polyurethane foam Substances 0.000 claims description 23
- 230000005484 gravity Effects 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 17
- 239000000155 melt Substances 0.000 claims description 16
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 9
- 229920005601 base polymer Polymers 0.000 claims description 8
- 238000003851 corona treatment Methods 0.000 claims description 5
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- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 4
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J167/00—Adhesives based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Adhesives based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J167/00—Adhesives based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Adhesives based on derivatives of such polymers
- C09J167/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2400/00—Presence of inorganic and organic materials
- C09J2400/20—Presence of organic materials
- C09J2400/24—Presence of a foam
- C09J2400/243—Presence of a foam in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2467/00—Presence of polyester
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2475/00—Presence of polyurethane
- C09J2475/006—Presence of polyurethane in the substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/2817—Heat sealable
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Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Health & Medical Sciences (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laminated Bodies (AREA)
- Adhesive Tapes (AREA)
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- Polyurethanes Or Polyureas (AREA)
Description
本發明係有關於一種用以製作可對透鏡、反射鏡等光學材料或矽晶圓、硬碟用玻璃基板、鋁基板、及一般金屬研磨加工等要求高度表面平坦性之材料進行穩定且高研磨效率之平坦化加工之積層研磨墊的熱熔接著劑片、及附有積層研磨墊用接著劑層之支持層。
製造半導體裝置時,於晶圓表面形成導電性薄膜,並進行以微影成像術、蝕刻等形成佈線層之步驟、或於佈線層上形成層間絕緣薄膜之步驟等,且因該等步驟於晶圓表面產生金屬等導電體或絕緣體所形成之凹凸。近年,為達到半導體積體電路之高密度化不斷發展佈線之微細化或多層佈線化,但使晶圓表面之凹凸平坦化之技術亦隨之益形重要。
過去高精度研磨所使用之研磨墊,一般係使用聚胺酯樹脂發泡體片。然而聚胺酯樹脂發泡體片雖局部平坦化能力佳,但緩衝性不足故難以在晶圓全面平均施加壓力。因此,通常於聚胺酯樹脂發泡體片之背面另設有柔軟之緩衝層,作為積層研磨墊以用於研磨加工。
但是,習知之積層研磨墊一般係以雙面膠帶黏合研磨層與緩衝層,但有研磨中漿液侵入研磨層與緩衝層之間而
使雙面膠帶之耐久性降低,且研磨層與緩衝層變成容易產生剝離之問題。
例如,乃提出以下之技術,作為解決上述問題之方法。
在專利文獻1中,揭示使用反應性熱熔接著劑接著塑膠薄膜及研磨墊。
在專利文獻2中,揭示底層及研磨層藉由熱熔接著劑層接著之研磨墊。
在專利文獻3中,揭示一種研磨層及基底層藉由雙面膠帶接著之研磨墊,且在研磨層之裡面與雙面膠帶之間設有由熱熔接著劑形成且遮斷研磨漿液之止水層的技術。
在專利文獻4中,揭示一種研磨層與下層藉由含有EVA之熱熔接著劑接合之研磨墊。
但是,專利文獻1~4中記載之熱熔接著劑有耐熱性低,且因長時間研磨而變成高溫時,接著性降低而使研磨層及緩衝層等變成容易剝離之問題。
專利文獻1:特開2002-224944號公報
專利文獻2:特開2005-167200號公報
專利文獻3:特開2009-95945號公報
專利文獻4:特表2010-525956號公報
本發明之目的在於提供一種即使因長時間研磨而變成高溫時研磨層與支持層之間亦不易剝離之積層研磨墊用熱熔接著劑片(以下,亦稱為熱熔接著劑片),及附有積層研磨墊用接著劑層之支持層(以下,亦稱為附有接著劑層之支持層)。
本發明人等為解決前述課題再三鑽研後,發現藉由以下所示之熱熔接著劑片或附有接著劑層之支持層可達成上述目的,並完成本發明。
即,本發明係有關於一種積層研磨墊用熱熔接著劑片,係用以積層研磨層與支持層者,其特徵在於:前述熱熔接著劑係聚酯系熱熔接著劑,且相對於基底聚合物之聚酯樹脂100重量份,含有2~10重量份之在1分子中具有2個以上環氧丙基的環氧樹脂。
當環氧樹脂之添加量未達2重量份時,因長時間研磨而變成高溫之情況下,熱熔接著劑片對研磨時產生之「位移」的耐久性不足,因此研磨層與支持層之間變成容易剝離。另一方面,大於10重量份時,接著劑層之硬度變成過高而使接著性降低,因此研磨層與支持層之間變成容易剝離。
基底聚合物之聚酯樹脂宜為結晶性聚酯樹脂。藉由使用結晶性聚酯樹脂,可提高對漿液之耐化學藥品性,且使接著劑層之接著力不易降低。
又,聚酯系熱熔接著劑係熔點為100~200℃,比重為1.1~1.3,且在150℃及負載2.16公斤之條件下,熔融流動指
數宜為16~26克/10分鐘。
前述熱熔接著劑片宜為雙面膠帶,其係在經實施易接著處理之基材兩面上具有由前述熱熔接著劑形成之接著劑層者。前述易接著處理宜為電暈處理或電漿處理。藉由在基材兩面實施易接著處理,即使因長時間研磨而變成高溫時亦可到優異之接著性。
又,本發明係有關於一種附有積層研磨墊用接著劑層之支持層,係在支持層之單面上具有塗布聚酯系熱熔接著劑,且使其硬化得到之接著劑層,且該聚酯類熱熔接著劑係相對於基底聚合物之聚酯樹脂100重量份,含有2~10重量份之在1分子中具有2個以上環氧丙基的環氧樹脂者。藉由在支持層直接塗布熱熔接著劑且使其硬化,得到支持層與接著劑層不易剝離之附有接著劑層之支持層。
基底聚合物之聚酯樹脂宜為結晶性聚酯樹脂。藉由使用結晶性聚酯樹脂,可提高對漿液之耐化學藥品性,且使接著劑層之接著力不易降低。
又,聚酯系熱熔接著劑之熔點為100~200℃,比重為1.1~1.3,且在溫度150℃及負載2.16公斤之條件下,熔融流動指數宜為16~26克/10分鐘。
前述支持層宜為在設有前述接著劑層之面上具有皮層之聚胺酯發泡片。藉使用具有皮層之聚胺酯發泡片作為支持層,可在支持層上形成厚度均一且表面平滑性優異之接著劑層。
前述聚胺酯發泡片宜藉由熱硬化性聚胺酯來形成。當
在支持層上塗布熱熔接著劑時,由於在高溫下使熱熔接著劑熔化,所以由耐熱性之觀點來看,宜使用熱硬化性聚胺酯作為支持層之原料。
藉由使用本發明之熱熔接著劑片或附有接著劑層之支持層,可得到即使在因長時間研磨而變成高溫的情況下,熱熔接著劑片對研磨時產生之「位移」之耐久性亦提高,且研磨層與支持層之間亦不易剝離的積層研磨墊。
本發明之研磨層係具有微細氣泡之發泡體,除此條件外無其他特殊限制。舉例言之,如:聚胺酯樹脂、聚酯樹脂、聚醯胺樹脂、丙烯酸樹脂、聚碳酸酯樹脂、鹵素系樹脂(聚氯乙烯、聚四氟乙烯、聚偏二氟乙烯等)、聚苯乙烯、烯烴系樹脂(聚乙烯、聚丙烯等)、環氧樹脂、感光性樹脂等1種或2種以上之混合物。聚胺酯樹脂因耐磨性佳,且藉由原料組成之各種變化可易於製出具有所需物性之聚合物,故為特別適於作為研磨層之形成材料的材料。以下就聚胺酯樹脂作為前述發泡體之代表予以說明。
前述聚胺酯樹脂係由異氰酸酯成分、多元醇成分(高分子量多元醇、低分子量多元醇)、及鏈伸長劑組成者。
異氰酸酯成分可不特別限於使用聚胺酯領域中公知之化合物。異氰酸酯成分可舉例如:2,4-二異氰酸甲苯酯、2,6-二異氰酸甲苯酯、2,2’-二苯甲烷二異氰酸酯、2,4’-二苯甲
烷二異氰酸酯、4,4’-二苯甲烷二異氰酸酯、1,5-萘二異氰酸酯、對苯二異氰酸酯、間苯二異氰酸酯、對伸茬二異氰酸酯、間伸茬二異氰酸酯等芳香族二異氰酸酯;乙烯二異氰酸酯、2,2,4-三甲基六亞甲基二異氰酸酯、1,6-六亞甲基二異氰酸酯等脂肪族二異氰酸酯;1,4-環己烷二異氰酸酯、4,4’-二環己基甲烷二異氰酸酯、二異氰酸異佛爾酮、降冰片烷二異氰酸酯等脂環族二異氰酸酯。可由以上諸等中選1種使用,或取2種以上混合亦可。
高分子量多元醇在聚胺酯之領域中可舉一般用者為例。可舉例如:以聚四亞甲基醚二醇、聚乙二醇等為代表之聚醚多元醇,以聚丁烯己二酸酯為代表之聚酯多元醇,聚己內酯多元醇,以聚己內酯之類聚酯二醇與碳酸伸烷酯之反應物等為例之聚酯聚碳酸酯多元醇,使碳酸伸乙酯與多元醇反應後所產生之反應混合物與有機二羧酸反應形成之聚酯聚碳酸酯多元醇,及聚羥基化合物與碳酸烯丙酯經轉酯作用而得之聚碳酸酯多元醇等。上述諸等可單獨使用,亦可合併2種以上使用。
多元醇成分除上述高分子量多元醇外,可並用乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2,3-丁二醇、1,6-己二醇、新戊二醇、1,4-環己烷二甲醇、3-甲基-1,5-戊二醇、二乙二醇、三乙二醇、1,4-雙(2-羥乙氧)苯、三羥甲基丙烷、甘油、1,2,6-己烷三醇、新戊四醇、四羥甲基環己烷、甲基葡萄糖苷、山梨糖醇、甘露糖醇、半乳糖醇、蔗糖、2,2,6,6-四(羥甲基)環己醇、二乙
醇胺、N-甲基乙醇胺、及三乙醇胺等低分子量多元醇。又,亦可與伸乙二胺、甲苯二胺、二苯甲烷二胺、及二伸乙三胺等低分子量多胺並用。又,亦可與一乙醇胺、2-(2-胺乙胺)乙醇、及一丙醇胺等醇胺並用。該等低分子量多元醇、分子量多胺等可單獨使用1種,亦可合併2種以上使用。低分子量多元醇或低分子量多胺等之混合量沒有特別限制,且係依由製成之研磨墊(研磨層)所要求之特性來適當決定。
以預聚合物法製造聚胺酯發泡體時,將鏈伸長劑用於預聚合物之硬化上。鏈伸長劑係具有至少2個以上活性氫基之有機化合物,活性氫基可舉羥基、1級或2級胺基、硫醇基(SH)等為例。具體言之,可舉例如:以4,4’-亞甲雙(鄰氯苯胺)(MOCA)、2,6-二氯對苯二胺、4,4’-亞甲雙(2,3-二氯苯胺)、3,5-雙(甲硫基)-2,4-甲苯二胺、3,5-雙(甲硫基)-2,6-甲苯二胺、3,5-二乙基甲苯-2,4-二胺、3,5-二乙基甲苯-2,6-二胺、1,3-丙二醇-二對胺苯甲酸酯、聚四亞甲基二醇-二對胺苯甲酸酯、4,4’-二胺-3,3’,5,5’-四乙基二苯甲烷、4,4’-二胺-3,3’-二異丙基-5,5’-二甲二苯甲烷、4,4’-二胺-3,3’,5,5’-四異丙基二苯甲烷、1,2-雙(2-胺基苯硫基)乙烷、4,4’-二胺-3,3’-二乙-5,5’-二甲二苯甲烷、N-N’-二(二級丁基)-4,4’-二胺二苯甲烷、3,3’-二乙-4,4’-二胺二苯甲烷、間伸茬二胺、N,N’-二(二級丁基)對苯二胺、間苯二胺、及對伸茬二胺等為例之多胺類,抑或上述低分子量多元醇或低分子量多胺。上述諸等可僅用1種,亦可取2種以上混合使用。
本發明中異氰酸酯成分、多元醇成分及鏈伸長劑之
比,得依各自之分子量或研磨墊所需之物性等做各種變化。為製得具有所需之研磨特性之研磨墊,相對於多元醇成分與鏈伸長劑之總活性氫基(羥基+胺基)數,異氰酸酯成分之異氰酸酯基數宜為0.80~1.20,若為0.99~1.15更佳。若異氰酸酯基數在前述範圍外,將導致硬化不良而無法獲得所需之比重及硬度,研磨特性益發降低。
聚胺酯發泡體可運用熔融法、溶液法等公知之聚胺酯化技術製造,但考慮到成本、作業環境等因素,則宜以熔融法進行製造。
聚胺酯發泡體可由預聚合物法、直接聚合法中採任一方法製造,但事先由異氰酸酯成分與多元醇成分合成端基為異氰酸酯之預聚合物,再使鏈伸長劑與該預聚合物反應之預聚合物法因製得之聚胺酯樹脂之物理性特性佳,故優於前述兩方法。
聚胺酯發泡體之製造方法,可舉添加中空珠粒之方法、機械性發泡法、化學性發泡法等為例。
其中又以使用了矽型界面活性劑之機械性發泡法尤佳,該矽型界面活性劑乃聚烷基矽氧與聚醚之共聚物,且不具活性氫基。
另,視必要亦可加入抗氧化劑等穩定劑、潤滑劑、顏料、填充劑、抗靜電劑及其他添加劑。
研磨層構成材料之聚胺酯發泡體可為獨立氣泡式,亦可為連續氣泡式。
聚胺酯發泡體之製造可採秤量各成份後投入容器並攪
拌之批式製造方式,亦可採用於攪拌裝置連續供給各成分與非反應性氣體後攪拌,並送出氣泡分散液製作成形品之連續生產方式。
又,亦可將聚胺酯發泡體之原料之預聚合物放入反應容器,再投入鏈伸長劑並攪拌後,注入預定大小之鑄模中製作塊體,並將該塊體藉由利用刨子狀或帶鋸狀之切片機進行切片之方法,或於前述鑄造之階段形成薄片狀。此外,亦可將作為原料之樹脂溶解,並由T字模擠製成形直接製得片狀聚胺酯發泡體。
前述聚胺酯發泡體之平均氣泡直徑宜為30~80μm,若為30~60μm更佳。若脫離此範圍,則有研磨速度下降,或研磨後之被研磨材(晶圓)之平面性(平坦性)降低之趨向。
前述聚胺酯發泡體之比重宜為0.5~1.3。比重未達0.5者,研磨層之表面強度趨於下降,且被研磨材之平面性降低。又,若大於1.3,則研磨層表面之氣泡數減少,平面性雖良好,但研磨速度趨於下降。
前述聚胺酯發泡體之硬度,宜經ASKER D型硬度計測為40~75度。ASKER D型硬度計測得之硬度未達40度者,被研磨材之平面性降低,又,若大於75度,平面性雖良好,但被研磨材之均勻度(均一性)將趨於下降。
研磨層之與被研磨材接觸之研磨表面宜具有用以保持、更換研磨液之凹凸構造。發泡體組成之研磨層於研磨表面具有許多開口,並具有保持、更換研磨液之作用,但藉由在研磨表面形成凹凸構造,可使研磨液之保持與更換
更有效率,並可防止與被研磨材吸附以致破壞被研磨材。凹凸構造並無特別限制,只要是可保持、更換研磨液之形狀即可,舉例言之,如XY細長凹槽、同心圓狀凹槽、未貫通孔、多角柱、圓柱、螺旋狀凹槽、偏心圓形凹槽、放射狀凹槽及該等凹槽之組合。又,該等凹凸構造一般具有規則性,但為使研磨液之保持、更換性佳,亦可每某一範圍改變凹槽節距、凹槽寬度、凹槽深度等。
研磨層之形狀並無特殊限制,可為圓形,亦可為狹長形。研磨層之大小可依使用之研磨裝置適當調整,圓形者直徑約為30~150cm,狹長形者則長度約為5~15m,寬度約60~250cm。
研磨層之厚度並無特殊限制,但通常約為0.8~4mm,且宜為1.2~2.5mm。
研磨層中設有用以於施行研磨之狀態下進行光學端點檢測之透明構件。透明構件嵌入設於研磨層中之開口部,且藉由接著於研磨層下之接著構件而固定。
積層研磨墊係以熱熔接著劑黏合研磨層及支持層來製作。
前述支持層係用以補足研磨層之特性者。支持層可使彈性模數比研磨層低之層(緩衝層),亦可使用彈性模數比研磨層高之層(高彈性層)。緩衝層係CMP中,為使折衷關係中平面性與均勻度兩者並立之所必須。所謂平面性係指研磨圖案形成時產生有微小凹凸之被研磨材後的圖案部之平坦性,均勻度係指被研磨材全體之均一性。藉由研磨層之特
性,改善平面性,並藉由緩衝層之特性改善均勻度。若CMP中,為抑制裂縫產生而使用柔軟研磨層,則為提高研磨墊之平坦化特性使用高彈性層。又,藉由使用高彈性層,可抑制過度切削被研磨材之邊緣部。
前述支持層之厚度並無特別限制,但宜為0.4~2mm,若為0.6~1.5mm較佳,且為0.7~1.3mm更佳。
前述緩衝層可舉例如:聚酯不織布、尼龍不織布、及丙烯酸不織布等纖維不織布;浸漬聚胺酯之聚酯不織布之類之浸樹脂不織布;聚胺酯泡棉及聚乙烯泡棉等高分子樹脂發泡體;丁二烯橡膠及異戊二烯橡膠等橡膠性樹脂;感光性樹脂等。
前述高彈性層可舉例如:聚對苯二甲酸乙二酯薄膜及聚萘二甲酸乙二酯薄膜等聚酯薄膜;聚乙烯薄膜及聚丙烯薄膜等聚烯烴薄膜;尼龍薄膜等。
在研磨層上設有透明構件時,宜在支持層上設置用以使光透過之開口部。
熱熔接著劑片可為由熱熔接著劑形成之接著劑層,亦可為在基材兩面設有前述接著劑層之雙面膠帶。
前述接著劑層之材料之聚酯系熱熔接著劑係,相對於基底聚合物之聚酯樹脂100重量份,含有2~10重量份之在1分子中具有2個以上環氧丙基之環氧樹脂。
前述聚酯樹脂可使用藉由酸成分及多元醇之縮聚合得到之公知者,但特佳的是使用結晶性聚酯樹脂。
酸成分可舉芳香族二羧酸,脂肪族二羧酸及脂環族二
羧酸等為例。可只使用該等酸成分中之1種,亦可合併2種以上使用。
芳香族二羧酸之具體例可舉例如:對苯二甲酸,間苯二甲酸,鄰苯二甲酸酐,α-萘二甲酸,β-萘二甲酸,及其酯形成體等。
脂肪族二羧酸之具體例可舉例如:琥珀酸,戊二酸,己二酸,庚二酸,壬二酸,癸二酸,十一碳烯酸,十二烷二甲酸,及其酯形成體等。
脂環族二羧酸之具體例可舉1,4-環己二甲酸,四氫化鄰苯二甲酸酐,六氫化鄰苯二甲酸酐等為例。
又,酸成分亦可並用順丁烯二酸,反丁烯二酸,二聚物酸,偏苯三酸,焦蜜石酸等多元羧酸。
多元醇成分可舉脂肪族二醇,脂環族二醇等二元醇及多元醇為例。可只使用該等多元醇成分中之1種,亦可合併2種以上使用。
脂肪族二醇之具體例可舉例如:乙二醇,1,2-丙二醇,1,3-丙二醇,1,4-丁二醇,1,5-戊二醇,1,6-己二醇,1,8-辛二醇,1,9-壬二醇,新戊二醇,3-甲基戊二醇,2,2,3-三甲基戊二醇,二乙二醇,三乙二醇,二丙二醇等。
脂環族二醇之具體例可舉1,4-環己烷二甲醇,氫化雙酚A等為例。
多元醇可舉甘油,三羥甲基乙烷,三羥甲基丙烷,新戊四醇等為例。
結晶性聚酯樹脂可藉由公知之方法合成。例如,包括
準備原料及觸媒,且以生成物熔點以上之溫度加熱之熔融聚合法、以生成物熔點以下之溫度加熱之固相聚合法、使用溶劑之溶液聚合法等,亦可採用任一種方法。
結晶性聚酯樹脂之熔點宜為100~200℃。熔點未達100℃時,熱熔接著劑之接著力會因研磨時發熱而下降,且超過200℃時,由於使熱熔接著劑熔融時之溫度升高,所以有在積層研磨墊產生翹曲而對研磨特性造成不良影響之傾向。
又,結晶性聚酯樹脂之數目平均分子量宜為5000~50000。數目平均分子量未達5000時,熱熔接著劑之機械特性降低,故無法得到充分之接著性及耐久性,且超過50000時,有合成結晶性聚酯樹脂時產生造成凝膠化等製造上之缺點,或作為熱熔接著劑之性能降低的傾向。
前述環氧樹脂可舉例如:雙酚A型環氧樹脂,溴化雙酚A型環氧樹脂,雙酚F型環氧樹脂,雙酚AD型環氧樹脂,二苯乙烯型環氧樹脂,聯苯型環氧樹脂,雙酚A酚醛清漆型環氧樹脂,甲酚酚醛清漆型環氧樹脂,二胺聯苯甲烷型環氧樹脂,及六(羥苯)乙烷系等之聚苯系環氧樹脂;含茀環氧樹脂,三環氧丙基異氰酸酯,含有雜芳香環(例如,三氮雜苯環等)之環氧樹脂等之芳香族環氧樹脂;脂肪族環氧丙基醚型環氧樹脂,脂肪族環氧丙基酯型環氧樹脂,脂環族環氧丙基醚型環氧樹脂,脂環族環氧丙基酯型環氧樹脂等之非芳香族環氧樹脂。可使用該等環氧樹脂之單獨1種,亦可合併2種以上使用。
該等環氧樹脂中,由研磨時與研磨層之接著性觀點來看,宜使用甲酚酚醛清漆型環氧樹脂。
前述環氧樹脂,相對於基底聚合物之聚酯樹脂100重量份,必須添加2~10重量份,且宜為3~7重量部。
聚酯系熱熔接著劑亦可含有烯烴系樹脂等軟化劑,黏著賦予劑,填充劑,安定劑,及耦合劑等公知之添加劑。又,亦可含有滑石等無機填料。
聚酯系熱熔接著劑係藉由任意之方法混合至少前述聚酯樹脂、及前述環氧樹脂等來調製。例如,藉由單軸擠壓機、嚙合型同向平行軸雙軸擠壓機、嚙合型異向平行軸雙軸擠壓機、嚙合型異向斜軸雙軸擠壓機、非嚙合型雙軸擠壓機、不完全嚙合型雙軸擠壓機、共揉和形擠壓機、行星齒輪型擠壓機、轉移混合擠壓機、輥子擠壓機等之擠壓成形機或揉合機等混合各原料來調製。
聚酯系熱熔接著劑之熔點宜為100~200℃。
又,聚酯系熱熔接著劑之比重宜為1.1~1.3。
又,聚酯系熱熔接著劑之熔融流動指數(MI)在溫度150℃、負載2.16公斤之條件下,宜為16~26克/10分鐘。
黏合研磨層與支持層之方法並無特別限制,且可舉在支持層(或研磨層)上積層由聚酯系熱熔接著劑形成之接著劑層,且藉由加熱器加熱熔融接著劑層,然後,將研磨層(或支持層)積層在熔融之接著劑上且進行衝壓的方法為例。衝壓之壓力並無特別限制,但宜為0.1~1.0MPa。
由熱熔接著劑形成之接著劑層之厚度宜為
10~200μm,若為30~100μm更佳。接著劑層之厚度未達10μm時,因長時間研磨而變成高溫時,熱熔接著劑對研磨時產生之「位移」的耐久性不足,因此研磨層與支持層之間變成容易剝離。另一方面,大於200μm時,透明性降低,因此在設有光學檢測用之透明構件之積層研磨墊之檢測精度方面產生問題。
亦可使用在基材兩面具有前述接著劑層之雙面膠帶取代由熱熔接著劑形成之接著劑層。藉由基材可防止漿液浸透至支持層側,且防止支持層與接著劑層間之剝離。
基材可舉例如:聚對苯二甲酸乙二酯薄膜及聚萘二甲酸乙二酯薄膜等聚酯薄膜;聚乙烯薄膜及聚丙烯薄膜等聚烯烴薄膜;尼龍薄膜等。其等之中,宜使用防透水性質佳之聚酯薄膜。
基材之表面亦可實施電暈處理、電漿處理等易接著處理。
基材之厚度並無特別限制,但由透明性、柔軟性、剛性、及加熱時之尺寸安定性等觀點來看宜為10~180μm。
使用雙面膠帶時,前述接著劑層之厚度宜為10~200μm,若為30~100μm更佳。
又,積層研磨墊亦可黏合研磨層與附有接著劑層之支持層來製作。
附有接著劑層之支持層係在支持層之單面上塗布前述聚酯系熱熔接著劑且使其硬化而在支持層上直接形成接著劑層者。支持層宜使用在設有接著劑層之面上具有皮層之
聚胺酯發泡片。又,前述聚胺酯發泡片宜藉由熱硬化性聚胺酯來形成。
又,依據與前述同樣之理由,接著劑層之厚度宜為10~200μm,若為30~100μm更佳。
黏合研磨層與附有接著劑層之支持層之方法並無特別限制,且可舉藉由加熱器加熱熔融附有接著劑層之支持層的接著劑層,然後,將研磨層積層在熔融之接著劑上且進行衝壓的方法為例。衝壓之壓力並無特別限制,但宜為0.1~1.0MPa。
積層研磨墊亦可在與平台接著之面上設有雙面膠帶。
以下,舉實施例說明本發明,但本發明並非以該等實施例為限。
數目平均分子量係以GPC(凝膠滲透層析法)測定,並按標準聚苯乙烯換算。
GPC裝置:島津製作所製,LC-10A
層析管柱:Polymer Laboratories公司製,並連結(PLgel、5μm、500Å)、(PLgel、5μm、100Å)、及(PLgel、5μm、50Å)三支層析管柱來使用
流量:1.0ml/min
濃度:1.0g/l
注入量:40μl
層析管柱溫度:40℃
析出液:四氫呋喃
聚酯系熱熔接著劑之熔點係使用TOLEDO DSC822(METTLER公司製),以20℃/min之升溫速度測定。
依據JIS Z8807-1976進行。將由聚酯系熱熔接著劑形成之接著劑層切出4cm×8.5cm之長條狀(厚度:任意),做成測定比重用試樣,並於溫度23℃±2℃、濕度50%±5%之環境下靜置16小時。測定時使用比重計(sartorius公司製)測定比重。
依據ASTM-D-1238,測定在150℃、2.16公斤之條件下聚酯系熱熔接著劑之熔融流動指數。
由製成之積層研磨墊切出3片寬度25mm×長度200mm之樣本,且以拉伸角度180°、拉伸速度300mm/min拉伸各樣本之研磨層及支持層,並測定此時之接著強度(N/25mm)。3片樣本之平均值顯示於表1中。又,確認此時之樣本的剝離狀態。又,於漿液(Cabot公司製,W2000)中添加過氧化氫水使濃度為4重量%來調製研磨漿液。將樣本浸漬於調整成80℃之前述研磨漿液中8小時,然後,以與前述同樣之方法進行接著強度之測定,且確認剝離狀態。重覆該操作5次。
將1229重量份之甲苯異氰酸酯(2,4-體/2,6-體=80/20之混合物),272重量份之4,4'-二環己基甲烷二異氰酸酯,1901重量份之數目平均分子量1018之聚四亞甲基醚二醇,198重量份之二乙二醇放入容器中,且在70℃反應4小時而得到端基為異氰酸酯之預聚合物。
於聚合容器內加入100重量份之該預聚合物及3重量份之矽型界面活性劑(Dow Corning Toray‧silicone公司製,SH-192)加以混合,並調整為80℃後予以減壓脫泡。繼之,利用攪拌葉片,以旋轉數900rpm激烈攪拌大約4分鐘,將氣泡帶入反應系內。再添加21重量份之預先調整溫度為70℃之Ethacure300(Albemarle公司製,3,5-雙(甲硫基)-2,6-甲苯二胺與3,5-雙(甲硫基)-2,4-甲苯二胺之混合物)。將該混合液攪拌約1分鐘後,注入盤式敞模(鑄模容器)中。於該混合液喪失流動性時放入烘箱內,進行100℃且16小時之後硬化,製得聚胺酯發泡體塊體。
將加熱至80℃之前述聚胺酯發泡體塊體使用切片機(Amitec公司製,VGW-125)切片,製得聚胺酯發泡體片(平均氣泡直徑:50μm,比重:0.86,硬度:52度)。其次,使用擦光機(Amitec公司製),對該片進行表面擦光處理直至厚度成為2mm,如此來形成厚度精度業經整合之片。於業經該擦光處理之片進行直徑60cm大小之衝壓,並使用凹槽加工機(Techno公司製)於表面進行凹槽寬度0.25mm、凹槽節距1.5mm、凹槽深度0.6mm之同心圓形凹槽加工,製成研磨層。
在兩面經電暈處理之厚度50μm的PET薄膜(TOYOBO公司製,E5200)上,積層100重量份之由含有結晶性聚酯樹脂(TOYOBO公司製,VYLON GM420),及5重量份之在1分子中具有2個以上環氧丙基之鄰甲酚酚醛清漆型環氧樹脂(NIPPON KAYAKU公司製,EOCN4400)之聚酯系熱熔接著劑形成的接著劑層(厚度50μm),且使用紅外線加熱器加熱接著劑層表面至150℃使接著劑層熔融。然後,使用壓力0.6MPa之積層機,以1m/min之搬運速度,在熔融之接著劑層上積層依照製造例1製成之研磨層,並加壓使之附著,而得到積層體A(研磨層/接著劑層/PET薄膜)。
在離型薄膜上,形成前述接著劑層(厚度50μm),且使用紅外線加熱器加熱接著劑層表面至150℃使接著劑層熔融。然後,使用壓力0.6MPa之積層機,以1m/min之搬運速度,一面剝離離型薄膜並一面在已熔融之接著劑層上積層由前述積層體A及發泡聚胺酯形成之支持層(NHK SPRING公司製,NIPPALAY EXT)並加壓使之附著,而得到積層體B(研磨層/接著劑層/PET薄膜/接著劑層/支持層)。
然後,使用積層機使壓感式雙面膠帶(3M公司製,442JA)黏合在積層體B之支持層上而製作積層研磨墊。
又,聚酯系熱熔接著劑之熔點為142℃,比重為1.22,熔融流動指數為21克/10分鐘。
在兩面經電暈處理之厚度50μm的PEN薄膜(Teijin
DuPont Film公司製,TeonexQ83)上,形成由實施例1記載之聚酯系熱熔接著劑形成之接著劑層(厚度50μm),然後,以與實施例1同樣之方法製成積層研磨墊。
除了在實施例1中,使用含有100重量份之結晶性聚酯樹脂(TOYOBO公司製,VYLON GM420),及2重量份之在1分子中具有2個以上環氧丙基之鄰甲酚酚醛清漆型環氧樹脂(NIPPON KAYAKU公司製,EOCN4400)之聚酯系熱熔接著劑以外,以與實施例1同樣之方法製成積層研磨墊。又,聚酯系熱熔接著劑之熔點為140℃,比重為1.24,熔融流動指數為26克/10分鐘。
除了在實施例1中,使用含有100重量份之結晶性聚酯樹脂(TOYOBO公司製,VYLON GM420),及10重量份之在1分子中具有2個以上環氧丙基之鄰甲酚酚醛清漆型環氧樹脂(NIPPON KAYAKU公司製,EOCN4400)之聚酯系熱熔接著劑以外,以與實施例1同樣之方法製成積層研磨墊。又,聚酯系熱熔接著劑之熔點為145℃,比重為1.19,熔融流動指數為16克/10分鐘。
在單面上具有皮層之熱硬化性聚胺酯發泡片(NHK SPRING公司製,NIPPALAY EXT,厚度0.8mm)的皮層上,塗布含有100重量份之結晶性聚酯樹脂(TOYOBO公司製,VYLON GM420),及5重量份之在1分子中具有2個以上環氧
丙基之鄰甲酚酚醛清漆型環氧樹脂(NIPPON KAYAKU公司製,EOCN4400)之聚酯系熱熔接著劑,且使其硬化而形成接著劑層(厚度75μm),製作附有接著劑層之發泡片。
使用紅外線加熱器加熱附有接著劑層之發泡片的接著劑層表面至150℃使接著劑層熔融。然後,使用壓力0.6MPa之積層機,以0.8m/min之搬運速度,在已熔融之接著劑層上積層並依照製造例1製成之研磨層加壓使之附著,而得到積層體(研磨層/接著劑層/發泡片)。
然後,使用積層機使壓感式雙面膠帶(3M公司製,442JA)黏合在積層體之發泡片上而製作積層研磨墊。
又,聚酯系熱熔接著劑之熔點為142℃,比重為1.22,熔融流動指數為21克/10分鐘。
除了在實施例1中,使用含有100重量份之結晶性聚酯樹脂(TOYOBO公司製,VYLON GM420),及1重量份之在1分子中具有2個以上環氧丙基之鄰甲酚酚醛清漆型環氧樹脂(NIPPON KAYAKU公司製,EOCN4400)之聚酯系熱熔接著劑以外,以與實施例1同樣之方法製成積層研磨墊。又,聚酯系熱熔接著劑之熔點為139℃,比重為1.25,熔融流動指數為29克/10分鐘。
除了在實施例1中,使用含有100重量份之結晶性聚酯樹脂(TOYOBO公司製,VYLON GM420),及18重量份之在1分子中具有2個以上環氧丙基之鄰甲酚酚醛清漆型環氧樹
脂(NIPPON KAYAKU公司製,EOCN4400)之聚酯系熱熔接著劑以外,以與實施例1同樣之方法製成積層研磨墊。又,聚酯系熱熔接著劑之熔點為147℃,比重為1.18,熔融流動指數為15克/10分鐘。
實施例1~5之積層研磨墊即使在長時間浸漬於高溫之研磨漿液中的情形下亦未產生在接著劑層之界面剝離。另一方面,在比較例1及2中,當在長時間浸漬於高溫之研磨漿液中時產生在接著劑層之界面剝離。由這些結果可知,使用本發明熱熔接著劑片製造積層研磨墊時,即使因長時間研磨而變成高溫時亦可得到安定之研磨性能。
Claims (5)
- 一種積層研磨墊用熱熔接著劑片,係用以積層研磨層與支持層而使用者,其特徵在於:該研磨層是以聚胺酯樹脂形成,且該支持層是聚酯薄膜,前述熱熔接著劑係聚酯系熱熔接著劑,且相對於基底聚合物之結晶性聚酯樹脂100重量份,含有2~10重量份之在1分子中具有2個以上環氧丙基的甲酚酚醛清漆型環氧樹脂,其中前述聚酯系熱熔接著劑係熔點為100~200℃,且比重為1.1~1.3,並且在溫度150℃及負載2.16公斤之條件下之熔融流動指數為16~26克/10分鐘。
- 如申請專利範圍第1項之積層研磨墊用熱熔接著劑片,其中前述熱熔接著劑片係在經實施易接著處理之基材兩面上具有由前述熱熔接著劑形成之接著劑層的雙面膠帶。
- 如申請專利範圍第2項之積層研磨墊用熱熔接著劑片,其中前述易接著處理係電暈處理或電漿處理。
- 一種附有積層研磨墊用接著劑層之支持層,係在支持層之單面上,具有塗布聚酯系熱熔接著劑且使其硬化而得到之接著劑層,該聚酯類熱熔接著劑係相對於基底聚合物之結晶性聚酯樹脂100重量份,含有2~10重量份之在1分子中具有2個以上環氧丙基的甲酚酚醛清漆型環氧樹脂,且該支持層係在設有前述接著劑層之面上具有皮層之聚胺酯發泡片,其中前述聚酯系熱熔接著劑係熔點為100~200℃, 比重為1.1~1.3,且在溫度150℃及負載2.16公斤之條件下,熔融流動指數為16~26克/10分鐘。
- 如申請專利範圍第4項之附有積層研磨墊用接著劑層之支持層,其中前述聚胺酯發泡片係藉由熱硬化性聚胺酯形成。
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JP2012067537A JP5858576B2 (ja) | 2011-04-21 | 2012-03-23 | 積層研磨パッド用ホットメルト接着剤シート、及び積層研磨パッド用接着剤層付き支持層 |
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TW104102369A TW201516116A (zh) | 2011-04-21 | 2012-04-20 | 積層硏磨墊用熱熔接著劑片、及附有積層硏磨墊用接著劑層之支持層(二) |
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US20160144477A1 (en) * | 2014-11-21 | 2016-05-26 | Diane Scott | Coated compressive subpad for chemical mechanical polishing |
US20160292744A1 (en) * | 2015-03-31 | 2016-10-06 | Yahoo! Inc. | Smart billboards |
WO2016200833A1 (en) * | 2015-06-08 | 2016-12-15 | Avery Dennison Corporation | Adhesives for chemical mechanical planarization applications |
EP3496897A1 (de) * | 2016-08-10 | 2019-06-19 | Klingspor AG | Schruppscheibe mit trägerschicht |
CN106926115B (zh) * | 2017-03-15 | 2022-12-09 | 东莞华晶粉末冶金有限公司 | 一种研磨垫及其制作方法 |
KR102079944B1 (ko) * | 2018-09-04 | 2020-02-21 | 정상희 | 셀 커팅용 보호시트 및 그 제조 방법 |
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TWI818029B (zh) * | 2019-05-31 | 2023-10-11 | 智勝科技股份有限公司 | 研磨墊、研磨墊的製造方法以及研磨方法 |
CN110437752B (zh) * | 2019-07-08 | 2020-09-08 | 武汉华星光电半导体显示技术有限公司 | 光学胶、显示面板及光学胶的制作方法 |
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CN116967930B (zh) * | 2023-09-21 | 2024-01-02 | 上海芯谦集成电路有限公司 | 特殊热熔胶加工工艺的抛光垫及其制备方法 |
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KR101542450B1 (ko) | 2015-08-06 |
WO2012144458A1 (ja) | 2012-10-26 |
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TW201247821A (en) | 2012-12-01 |
TW201516116A (zh) | 2015-05-01 |
JP5858576B2 (ja) | 2016-02-10 |
CN103492124A (zh) | 2014-01-01 |
US20140037947A1 (en) | 2014-02-06 |
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KR20130108476A (ko) | 2013-10-02 |
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