TWI538260B - 波長轉換之半導體發光裝置 - Google Patents
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Luminescent Compositions (AREA)
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Description
本發明係關於波長轉換半導體發光裝置。
半導體發光裝置包括發光二極體(LED)、諧振腔發光二極體(RCLED)、垂直腔雷射二極體(VCSEL)及邊緣發射型雷射係目前可使用的最有效光源。目前在製造可跨過可見光譜操作之高亮度發光裝置中所關注之材料系統包含III族至V族半導體,尤其是鎵、鋁、銦及氮之二元合金、三元合金及四元合金,亦稱為三族氮化物材料。三族氮化物發光裝置通常藉由在一藍寶石基板、碳化矽基板、三族氮化物基板或其他合適基板上藉由金屬有機物化學汽相沈積(MOCVD)、分子光束磊晶(MBE)或其他磊晶技術磊晶成長具有不同組合物及摻雜劑濃度的半導體層之一堆疊體而製造。該堆疊體通常包含形成於該基板上的(例如)摻雜矽之一層或多層n型層;在一作用區域內形成於該n型層或該等n型層上之一層或多層發光層;及形成於該作用區域上之(例如)摻雜鎂之一層或多層p型層。若干電接觸件形成於該等n型及p型區域上。
由作用區域發射之光之波長可藉由將一波長轉換材料(諸如磷光體或染料)定位於由該作用區域發射之光路徑中而得以變換。該波長轉換材料吸收由該作用區域發射之光並且發射不同峰值波長的光,該不同峰值波長通常長於由該作用區域發射之光之峰值波長。圖1繪示美國專利US 6,870,311中更詳細地描述之一波長轉換半導體發光裝置。在圖1之裝置中,一發光半導體裝置32被佈置於一反射杯34中。一層透明材料36層44被佈置於裝置32之一個或多個表面上。奈米微粒38及磷光體微粒40分散於材料36中。合適的奈米微粒之實例包含金屬氧化物、氮化物、氮矽化物及其等之混合物之奈米微粒。合適的金屬氧化物可包括(但不限於)氧化鈣、氧化鈰、氧化鉿、氧化鈦、氧化鋅、氧化鋯及其等之組合。此等金屬氧化物之奈米微粒具有(例如)介於大約2奈米至大約10奈米之範圍內的尺寸,例如從德國法蘭克福/Main之Degussa-Huls AG已知。此等實施項之合適奈米微粒可能亦包含II族至VI族半導體奈米微粒(諸如,硫化鋅、硒化鋅、硫化鎘、硒化鎘、碲化鎘及其等之三元或四元混合物)及III族至V族半導體奈米微粒(諸如三族氮化物、三族磷化物及其等之混合物)。該等奈米微粒經選擇以具有比主體材料之折射率更大的折射率。
透明材料36可以是有機或無機的並且可包括例如含有(但不限於)習知環氧樹脂、丙烯酸系聚合物、聚碳酸酯、矽酮聚合物、光學玻璃、硫族化物玻璃、螺[環接]化合物及其等之混合物之材料。
此項技術中需要對波長轉換半導體發光裝置之有效設計。
本發明之目的為提供一種包括一發光材料及經定位以消散來自該發光材料之熱量之一熱耦合材料的裝置。
在本發明之實施例中,一裝置包含一半導體結構,該半導體結構包括佈置於一n型區域及一p型區域之間的一發光層。一發光材料經定位於由該發光層發射之光之一路徑內。一熱耦合材料被佈置於一透明材料中。該熱耦合材料具有比該透明材料之導熱率更大之導熱率。該熱耦合材料經定位以消散來自該發光材料之熱量。
歸因於(例如)在較高波長光子的發射中的能量損失、磷光體之有限的轉換效率及未從該裝置中萃取之光子之再吸收作用可藉由如圖1中所繪示之磷光體之波長轉換來產生熱量。歸因於透明材料之低導熱性,可藉由該磷光體與裝置封裝之較差熱耦合而阻止圖1之裝置的熱量消散。例如一聚矽氧透明材料通常具有一大約0.1 W/m-℃至0.2 W/m-℃之導熱率。由波長轉換引起之額外熱量會導致操作溫度足夠高以造成透明材料中的有機物分解,這可導致透明材料變黃,甚至導致裝置故障。此外,一些磷光體的量子效率在高溫下會減小,這可不期望地造成由該裝置發射之光之色點的轉移或光輸出量的減少。
在本發明之實施例中,一熱耦合材料被佈置於一半導體發光裝置上,以移除在該波長轉換材料中及周圍之熱量。來自該波長轉換材料之熱量通過該熱耦合材料消散至該發光裝置及一散熱器或該發光裝置所連接之基座。
該熱耦合材料可被佈置於一透明主體材料中。一合適的主體材料之一實例為對於可見光具有1.4與1.55之間的折射率的聚矽氧。透明主體材料之另外的實例包含有機或無機材料,諸如矽酮聚合物、環氧樹脂、丙烯酸系聚合物、聚碳酸酯、光學玻璃、硫族化物玻璃及其等之混合物。亦可用高折射率透明主體材料,諸如高折射率玻璃及已由奈米微粒之添加而改變折射率之材料,諸如矽酮聚合物、環氧樹脂及溶膠凝膠化,如美國專利US 6,870,311中所描述。
熱耦合材料可具有與該主體材料之折射率接近或匹配之一折射率。熱耦合材料之折射率與該主體材料之折射率在一些實施例中具有小於10%的不同且在一些實施例中具有小於1%的不同。
該熱耦合材料之導熱率超過了該主體材料之導熱率。例如,該熱耦合材料在一些實施例中可能具有大於0.5 W/m-℃的導熱率,在一些實施例中具有大於1 W/m-℃的導熱率,且在一些實施例中具有大於5 W/m-℃的導熱率。
合適的熱耦合材料之實例包含鋁/矽混合氧化物、矽石、非結晶矽石、碳化矽、AlN、鑚石、未活化的磷光體微粒(諸如未摻雜Ce的透明YAG微粒)及其混合物。諸如YAG之未活化磷光體微粒不會使由發光裝置發射之光波長轉換。
在一些實施例中,該熱耦合材料可為具有大於與之結合的磷光體之中值微粒尺寸之中值微粒尺寸的一粉末,在一些實施例中可能大於1 μm,在一些實施例中可能大於5 μm,在一些實施例中可能介於1 μm與50 μm之間,在一些實施例中可能介於1 μm與10 μm之間,在一些實施例中可能介於10 μm與50 μm之間。粉末磷光體通常具有介於1 μm與10 μm之間的微粒尺寸。該熱耦合材料可為球形粉末或接近於球形微粒。在一些實施例中,該熱耦合材料經定位使得該等熱耦合材料微粒之大部份都與最近的相鄰微粒接觸並形成一網模。熱量沿著該網模傳導直至熱量消散至該發光裝置中。
下文說明本發明之諸實施例。雖然該等實施例說明三族氮化物薄膜覆晶裝置,但是本發明之實施例可與其他裝置連用,諸如其中成長基板保留著成品裝置之部份的習知的覆晶裝置、其中接觸件形成於半導體結構之相對側上之垂直裝置、其中通過形成在半導體結構之相同側或相對側上之接觸件而萃取光之裝置及由其他材料系統形成之裝置,諸如AlInGaP裝置或AIGaAs裝置。
所說明之該薄膜覆晶裝置係藉由首先在一成長基板上成長一半導體結構而形成。該半導體結構包括一n型區域、一發光或作用區域及一p型區域。首先成長一n型區域。該n型區域可包含具不同組合物及摻雜濃度的多層,該多層包括(例如):製備層(諸如緩衝層或成核層),其等可為n型或非有意摻雜的;釋放層,其等經設計用以利於該基板的稍後釋放或在移除該基板後薄化該半導體結構;及n型或甚至p型裝置層,其等經設計用於該發光區域有效地發射光所需之特定光學性質或電性質。
一發光或作用區域成長於該n型區域上。合適的發光區域之實例包含一單一厚型或薄型發光層,或包含由阻障層分開的多層薄型或厚型量子井發光層之一多量子井發光區域。例如,一多量子井發光區域可包含多層發光層,每一層具有25 或更小的厚度,該等發光層由阻障層分開,每一阻障層具有100 或更小之厚度。在一些實施例中,裝置中之該等發光層之每一層之厚度厚於50 。
一p型區域成長於該發光區域上。類似於該n型區域,該p型區域可包含具不同組合物、厚度及摻雜濃度的多層,其等包括非有意摻雜之層或n型層。
一反射金屬p接觸件形成於該p型區域上,該反射金屬p接觸件可能是(例如)銀且可包含其他層,諸如保護層。該p接觸件、該p型區域及該半導體結構之發光區域之部份被蝕刻掉以暴露該n型區域之部份。n接觸件形成於該n型區域之暴露部份上。
LED 50藉由n型及p型互連件接合至一支撐件,該n型及p型互連件可能是任何合適的材料,諸如焊料、Au、Au/Sn或其他金屬,並可能包括多層材料。在一些實施例中,互連件包含至少一金層,且該LED與基座54之間之接合係藉由超音波接合而形成。
在接合LED晶粒至支撐件後,可移除該等半導體層所成長之基板之全部或部份。在移除該主體基板後可(例如)藉由光電化學蝕刻薄化剩餘之該半導體結構。該半導體表面可(例如)藉由一光子晶體結構經粗糙化或圖案化。接著該LED 50可附接至一基座54(該基座54可為該支撐件)或其上安裝有該支撐件的一分離結構。一可選擇裝置52(該可選擇裝置52可為(例如)常形成為習知的矽積體電路之一ESD保護電路或其他電路)可被附接至該基座54或整合至基座54。
在下文描述之實施例中,一熱耦合材料及一個或多個波長轉換材料(通常為磷光體)與三族氮化物LED相結合。可使用更多或更少的波長轉換材料,且可使用非磷光體波長轉換材料,諸如染料或量子點。該等波長轉換材料可轉換來自該LED之全部光以形成單色光或白光,或該等波長轉換材料可經組態使得由該LED發射之一些光未經轉換而從該結構中射出。在一些實施例中,未經轉換的光及經波長轉換的光結合以形成白光。例如,一藍光發射LED可與一黃光發射磷光體結合,或一藍光發射LED可與一紅光發射磷光體及一黃光或綠光發射磷光體結合。可添加發射的其他顏色的光之其他磷光體以獲得一所需色點。
磷光體已被熟知且任何合適的磷光體都可被使用。合適的紅光發射磷光體之實例包含eCAS、BSSNE、SSONE以及(Ca1-xSrx)S:Eu2+(其中0<x1),包含(例如)CaS:Eu2+及SrS:Eu2+;及(Sr1-x-yBaxCay)2-zSi5-aAlaN8-aOa:Euz 2+(其中0a<5,0<x1,0y1及0<z1),包含(例如)Sr2Si5N8:Eu2+)。eCAS(即Ca1-xAlSiN3:Eux)可由5.436 g Ca3N2(>98%純度)、4.099 g AlN(99%)、4.732 g Si3N4(>98%純度)及0.176 g Eu2O3(99.99%純度)合成。該等粉末藉由行星式球磨研磨混合,並且在H2/N2(5/95%)氣體於1500℃下燃燒4小時。BSSNE,即Ba2-x-zMxSi5-yAlyN8-yOy:Euz(M=Sr、Ca;0x1,0y4,0.0005z0.05)可藉由碳熱還原合成,該碳熱還原包含利用2-丙醇作為分散劑藉由行星式球磨研磨將60 g BaCO3、11.221 g SrCO3及1.672 g Eu2O3(全部為99.99%純度)混合。在乾燥以後,該混合物在形成氣體中於1000℃下燃燒4小時,且因此獲得的10 g Ba0.8Sr0.2O:Eu(2%)中的與5.846 g Si3N4(>98%純度)、0.056 g AlN(99%純度)及1.060 g石墨(微晶級)混合。該等粉末藉由20分鐘的行星式球磨研磨完全混合並在形成氣體中於1450℃下燃燒4小時以獲得Ba2-x-zMxSi5-yAlyN8-yOy:Euz粉末(M=Sr、Ca;0x1,0y4,0.0005z0.05)。SSONE可藉由混合80.36 g SrCO3(99.99%純度)、20.0 g SiN4/3(>98%純度)及2.28 g Eu2O3(99.99%純度)並在N2/H2(93/7)氣體中於1200℃下燃燒4小時而製成。
合適的黃光/綠光發射磷光體之實例包含鋁石榴石磷光體,其符合以下通式:(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12:CeaPrb(其中0<x<1,0<y<1,0<z0.1,0<a0.2及0<b0.1),諸如Lu3Al5O12:Ce3+及Y3Al5O12:Ce3+;SrSi2N2O2:Eu2+;(Sr1-u-v-xMguCavBax)(Ga2-y-zAlyInzS4):Eu2+,包含(例如)SrGa2S4:Eu2+;及Sr1-xBaxSiO4:Eu2+。一合適的Y3Al5O12:Ce3+陶瓷可如下產製:在輥架上利用1.5 kg高純度氧化鋁球(2毫米直徑)將40 g Y2O3(99.998%)、32 g Al2O3(99.999%)及3.44 g CeO2於異丙醇中研磨12小時。接著將乾燥前驅粉末在1300℃下於CO氣體中煅燒兩小時。接著將獲得的YAG粉末在乙醇下藉由一行星式球磨研磨(瑪瑙球)去聚結。接著在乾燥後該陶瓷漿液經滑鑄以獲得一陶瓷綠色體。接著該等綠色體在1700℃於石墨板之間燒結兩個小時。
在圖2繪示之該實施例中,一熱耦合材料56與粉末磷光體58a及58b混合且佈置於一透明主體材料60中。該混合物可以液體或漿液的形態分佈於LED 50上,接著固化。例如,如題為「Overmolded Lens Over LED Die」且以引用方式併入本文中之美國專利US 7,344,902中所描述,該混合物可模塑於該LED 50上。或,含有該等磷光體之一薄膜及該熱耦合材料可形成為與該LED分離,接著定位於該LED 50上。在一LED上形成磷光體與透明主體材料之一混合物之其他實例包含層壓或膠黏分離形成為一薄膜之混合物,網版印刷此混合物,或刀刃沈積此混合物。在一替代實施例中,該混合物中可能僅存在一種粉末磷光體58a。
在圖3繪示之實施例中,該兩種磷光體分離並佈置於該LED上作為分離散層。每個磷光體與熱耦合材料56及一透明黏合材料60混合。在一些實施例中,熱耦合材料56可能僅包含於多層磷光體層的一層中,或者包含於無磷光體的主體材料的一分離層中。離散層可由不同方法形成,該等方法包含(但不限於):層壓、膠黏、網版印刷術、刀刃沈積。
在圖2及圖3之該等裝置中,在一些實施例中,磷光體及熱耦合材料之結合體積可占到磷光體、熱耦合材料及主體材料之總體積的至少30%,且在一些實施例中,磷光體及熱耦合材料之結合體積可能占到磷光體、熱耦合材料及主體材料之總體積的至少60%。黃光或綠光發射磷光體:紅光發射磷光體:透明材料:熱耦合材料之重量比在一實例中可為3.67:1.33:7:3,在一實例中可為3.67:1.33:8:2且在一實例中可為3.67:1.33:5:5。
圖4繪示之裝置包含一熱耦合材料及一發光陶瓷或陶瓷磷光體66。以引用方式併入本文之美國專利US 7,361,938中更詳細地描述陶瓷磷光體。陶瓷磷光體66可獨立於LED 50的處理而預形成至一板中,接著藉由包含有一透明黏合劑63之黏合層62膠黏至LED 50。熱耦合材料56可與黏合層62中的透明黏合劑63混合。
一可選擇第二磷光體層64被佈置於陶瓷磷光體66與晶粒50之間。可選擇第二磷光體層64(例如)可為如上所描述之與一透明主體60混合之一粉末磷光體58,接著其被施加並固化於陶瓷磷光體66之底面。熱耦合材料56可與主體材料66中的磷光體58混合,但並不必須如此。在圖4繪示之裝置中,熱耦合材料56可佈置於黏合層62與第二磷光體層64中的僅一者或兩者中。在一些實施例中,如果磷光體層64中的該主體材料60適於將陶瓷磷光體66附接至晶粒50,則可省略一分離的黏合層62。
在圖5之裝置中,一光學元件(諸如一透鏡)形成於LED 50上。透鏡68可由(例如)聚矽氧或任何其他適合之透明材料60形成。在一些實施例中,熱耦合材料之體積可占到熱耦合材料及透明主體材料之總體積的至少30%,且在一些實施例中,熱耦合材料之體積可占到熱耦合材料及透明主體材料之總體積的至少60%。一發光層70可形成於透鏡68上。發光層70可包含佈置於一透明主體材料60中之一個或多個磷光體58a及58b。透鏡68及發光層70之一者或兩者可包含熱耦合材料56。
圖6繪示在有與沒有熱耦合材料的情況下,隨裝置之正向電流改變之該發光層與一磷光體層之間的溫度梯度。在如圖6繪示之該等裝置中,LuAG及摻雜銪之(Ca0.2Sr0.8)AlSiN3磷光體之一混合物佈置於一聚矽氧主體材料中且佈置於一薄膜覆晶裝置上。根據本發明之實施例,填充圓繪示一種具有佈置於該主體材料中的一熱耦合材料裝置。開放圓繪示一種不具有熱耦合材料的裝置。如圖6所繪示,在所有正向電流值處,包含有一熱耦合材料的裝置之溫度梯度更小,此表明在所有正向電流處,該熱耦合材料消散來自該磷光體的熱量,同時不會造成來自該裝置之光輸出的降低。
在一些實施例中,透明材料之微粒與一透明主體材料中的磷光體粉末混合。該等透明材料微粒具有與該主體材料之折射率相匹配或相近的一折射率,並經定位以防止該主體材料中的磷光體沈降。在一些實施例中,透明材料微粒之結合體積可占磷光體、透明材料微粒及主體材料之總體積的至少0.1%;在在一些實施例中,透明材料微粒之結合體積可占磷光體、透明材料微粒及主體材料之總體積的至少1%;且在一些實施例中,透明材料微粒之結合體積可占磷光體、透明材料微粒及主體材料之總體積的至少20%。在一些實施例中,該等透明材料之微粒可為在一些實施例中其中值微粒尺寸介於0.1 μm與5 μm之間的一粉末;在一些實施例中其中值微粒尺寸為介於1 μm與10 μm之間的一粉末;在一些實施例中其中值微粒尺寸為介於10 μm與50 μm之間的一粉末。該等透明材料之微粒通常呈球形或接近於球形。
已詳細描述本發明,熟習此項技術者應瞭解根據給定的本發明在不脫離本文中所描述之發明理論之精神下可對本發明作出修改。因此,並非意欲將本發明之範圍限定在所說明與所描述之特定實施例中。在申請專利範圍中,括弧間的任何參考符號不視為限制申請專利範圍。單詞「comprising」不排除除了在申請專利範圍中所列出的元件或步驟之外的其他元件或步驟之存在。冠於一元件前的單詞「a」或「an」並不排除複數個此類元件的存在。在列舉了若干構件的裝置請求項中,此等構件中的若干個可由一個或相同硬體項來具體實施。在相互不同的附屬請求項中敍述的特定方法並不表明此等方法之組合無法被有利使用之純事實。
32...發光半導體裝置
34...反射杯
36...透明材料
38...奈米微粒
40...磷光體粉末
44...透明材料層
50...半導體結構
52...可選擇裝置
54...基座
56...熱耦合材料
58a...發光材料
58b...發光材料
60...透明主體材料
62...黏合層
63...黏合劑
64...可選擇第二磷光體層
66...陶瓷磷光體
68...透鏡
70...發光層
圖1繪示塗覆有透明材料的一先前技術半導體發光裝置,該透明材料包含磷光體微粒及奈米微粒;
圖2繪示一種佈置於一發光裝置上的包含磷光體及一熱耦合材料之透明材料;
圖3繪示佈置於一發光裝置上的兩層離散層,每一離散層包含一透明材料、一磷光體及一熱耦合材料;
圖4繪示佈置於一發光裝置上的一多層裝置,該多層裝置包含一陶瓷磷光體;一透明材料層,該透明材料層含有一磷光體及一熱耦合材料;及一膠黏層,該膠黏層包含一熱耦合材料;
圖5繪示佈置於一發光裝置上之一磷光體層及一透鏡,該透鏡由熱耦合材料填充;及
圖6繪示在有與沒有熱耦合材料的情況下,隨裝置之正向電流改變之該發光層與一磷光體層之間的溫度梯度。
50...半導體結構
52...可選擇裝置
54...基座
56...熱耦合材料
58a...發光材料
58b...發光材料
60...透明主體材料
Claims (15)
- 一種半導體裝置,其包括:一半導體結構(50),其包括一發光層;一發光(luminescent)材料(58a、58b、58、66),其定位於由該發光層發射之光之一路徑中;及一熱耦合材料(56),其佈置(disposed)於一透明材料(60)中;其中:該熱耦合材料不會波長轉換由該發光層發射之光;該熱耦合材料之一導熱率大於該透明材料之一導熱率;該熱耦合材料係經定位以消散(dissipate)來自該發光材料的熱量;及該熱耦合材料之一折射率與該透明材料之一折射率具有小於10%的不同。
- 如請求項1之裝置,其中該發光材料(58a、58b、58、66)為佈置於該透明材料(60)中之一粉末磷光體(58a、58b、58)。
- 如請求項1之裝置,其中:該發光材料(58a、58b、58、66)係經組態以發射一第一峰值波長光之一第一發光材料(58a);該裝置進一步包括經組態以發射一第二峰值波長光之一第二發光材料(58b);及該等第一及第二發光材料混合並佈置於該透明材料 (60)中。
- 如請求項1之裝置,其中:該發光材料(58a、58b、58、66)係經組態以發射一第一峰值波長光之一第一發光材料(58a);該裝置進一步包括經組態以發射一第二峰值波長光之一第二發光材料(58b);及該等第一及第二發光材料被佈置於透明材料(60)中並被定位於離散層中且在該半導體結構上。
- 如請求項1之裝置,其中該發光材料(58a、58b、58、66)為一陶瓷磷光體(66)。
- 如請求項1之裝置,其進一步包括佈置於該透明材料(60)中的一粉末磷光體(58)。
- 如請求項1之裝置,其中該透明材料(60)形成於一透鏡(68)中並且該透明材料被佈置於該半導體結構(50)與該發光材料(58a、58b)之間。
- 如請求項1之裝置,其中該發光層為三族氮化物材料。
- 如請求項1之裝置,其中該熱耦合材料(56)具有至少5W/m-℃之一導熱率。
- 如請求項1之裝置,其中該熱耦合材料(56)包括鋁/矽混合氧化物、矽石、非結晶矽石、碳化矽、AlN、鑚石、未活化的磷光體微粒、未摻雜Ce的YAG及其混合物之一者。
- 如請求項1之裝置,其中該熱耦合材料(56)包括具有介於1μm與50μm之間的一中值微粒尺寸的一粉末。
- 如請求項1之裝置,其中該熱耦合材料(56)包括一粉末,其中該等熱耦合材料微粒之至少一部份與最近的相鄰微粒直接接觸並形成到達該半導體結構(50)的一導熱路徑。
- 一種製造一半導體裝置的方法,該方法包括:提供包含一發光層的一半導體結構(50);將一發光材料(58a、58b、58、66)定位於由該發光層發射之光之一路徑中;及定位佈置於一透明材料(60)中的一熱耦合材料(56)以消散來自該發光材料的熱量;其中:該熱耦合材料不會波長轉換由該發光層發射之光;該熱耦合材料之一導熱率大於該透明材料之一導熱率;及該熱耦合材料之一折射率與該透明材料之一折射率具有小於10%的不同。
- 如請求項13之方法,其中該發光材料(58a、58b、58、66)為一陶瓷磷光體(66)。
- 如請求項13之方法,其中該熱耦合材料(56)包括鋁/矽混合氧化物、矽石、非結晶矽石、碳化矽、AlN、鑚石、未活化的磷光體微粒、未摻雜Ce的YAG及其混合物之一者。
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EP2272104A1 (en) * | 2008-04-23 | 2011-01-12 | Koninklijke Philips Electronics N.V. | A luminous device |
DE102008030253B4 (de) * | 2008-06-25 | 2020-02-20 | Osram Opto Semiconductors Gmbh | Konversionselement und Leuchtmittel |
US7974508B2 (en) * | 2009-02-03 | 2011-07-05 | Nitto Denko Corporation | Multi-layer structure and method for manufacturing the same |
-
2009
- 2009-11-23 US US12/624,156 patent/US8203161B2/en active Active
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2010
- 2010-10-15 TW TW099135305A patent/TWI538260B/zh active
- 2010-10-22 CN CN201080052992.2A patent/CN102714261B/zh active Active
- 2010-10-22 KR KR1020127016254A patent/KR20120086731A/ko active Search and Examination
- 2010-10-22 RU RU2012126168/28A patent/RU2550753C2/ru active
- 2010-10-22 WO PCT/IB2010/054800 patent/WO2011061650A1/en active Application Filing
- 2010-10-22 JP JP2012539445A patent/JP6174859B2/ja active Active
- 2010-10-22 EP EP10779854.8A patent/EP2504870B1/en active Active
- 2010-10-22 BR BR112012011910A patent/BR112012011910A2/pt not_active Application Discontinuation
Also Published As
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US8203161B2 (en) | 2012-06-19 |
TW201123552A (en) | 2011-07-01 |
KR20120086731A (ko) | 2012-08-03 |
CN102714261A (zh) | 2012-10-03 |
CN102714261B (zh) | 2016-07-06 |
BR112012011910A2 (pt) | 2017-10-10 |
RU2012126168A (ru) | 2013-12-27 |
EP2504870B1 (en) | 2019-08-14 |
WO2011061650A1 (en) | 2011-05-26 |
US20110121331A1 (en) | 2011-05-26 |
RU2550753C2 (ru) | 2015-05-10 |
JP6174859B2 (ja) | 2017-08-02 |
JP2013511836A (ja) | 2013-04-04 |
EP2504870A1 (en) | 2012-10-03 |
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