TWI534887B - A plasma processing apparatus and a temperature isolating apparatus therefor - Google Patents

Description

Plasma processing device and temperature isolation device therefor

The present invention relates to the field of semiconductor manufacturing equipment, and more particularly to a plasma processing apparatus and a temperature isolating apparatus therefor.

At present, plasma treatment for the purpose of performing thin film deposition, etching, or the like is widely practiced in a semiconductor manufacturing process. For example, in the inductively coupled plasma processing apparatus shown in FIG. 1 and FIG. 2, a chamber 300 having a vacuum is provided, and a base 600 is disposed at a bottom portion of the chamber 300, and an electrostatic chuck 700 is disposed on the base 600. The substrate 500 to be processed (for example, a semiconductor wafer, a glass substrate, or the like) is placed on the electrostatic chuck 700. The top of the chamber 300 is provided as a dielectric window 100, typically composed of a ceramic material (Al ₂ O ₃ ). A ring cover 200 is disposed on the top of the annular side wall of the chamber 300, and a portion of the top surface of the ring cover 200 extending outward from the inner edge is in contact with a portion of the bottom surface of the dielectric window 100 extending inwardly from the outer edge ( Reference numeral 110 shows the contact surface position of both, so that the dielectric window 100 is supported by the ring cover 200. Outside the chamber 300, a coil-shaped sensing antenna 400 is generally disposed above the dielectric window 100. An RF RF current is applied to the sensing antenna 400 to generate a magnetic field around the sensing antenna 400. The magnetic field lines of the magnetic field pass through the dielectric window 100. Within the chamber 300, between the substrate to be processed 500 and the bottom of the dielectric window 100. The reaction region generates an induced electric field, and the molecules or atoms of the reaction gas introduced into the chamber 300 are ionically collided by the induced electric field, thereby processing the substrate 500 by forming a plasma of the reaction gas in the reaction region.

The plasma generated in the chamber 300 is efficiently diffused to the periphery in the reaction region, and the plasma bombards the dielectric window 100 during a long process. The bottom surface is such that a sufficient amount of heat (for example, 3 kW) is accumulated in the dielectric window 100 to raise the temperature of the dielectric window 100 and its periphery. However, since the ring cover 200 supporting the dielectric window 100 is generally made of a metal (for example, aluminum Al or an alloy thereof), the ring cover 200 and the dielectric window 100 are in terms of specific heat capacity, thermal expansion coefficient, and thermal conductivity. There is a big difference. Further, in addition to the inside of the ring cover 200, a pipe 210 for conveying gas into the chamber 300 is opened, and a pipe 220 is additionally provided inside the ring cover 200 for the coolant to flow to lower the temperature of the ring cover 200. Therefore, the temperature of the dielectric window 100 may be higher than the temperature of the ring cover 200 such that heat is conducted from the dielectric window 100 to the ring cover 200 via the edge position where the dielectric window 100 is in contact with the ring cover 200. As a result, a large temperature gradient is generated between the center position of the dielectric window 100 and the edge position of the dielectric window 100 contacting the ring cover 200, on the one hand, the plasma formed in the reaction region below the dielectric window 100 is The problem of uneven distribution of the center and edge regions occurs, affecting the uniformity of the basic processing; on the other hand, the temperature difference also causes the dielectric window 100 to be deformed, thereby causing the dielectric window 100 to crack and break the chamber 300. The substrate or other equipment seriously affects the safety of the entire plasma processing apparatus.

It is an object of the present invention to provide a plasma processing apparatus and a temperature isolating device therefor, which uses an insulating ring made of a heat insulating material to replace a portion of the ring cover that originally contacts the dielectric window to block heat of the dielectric window. Conducting to the ring cover, thereby reducing the temperature gradient between the center position and the edge position of the dielectric window, avoiding the cracking phenomenon of the dielectric window due to the temperature difference, and effectively improving the safety performance of the plasma processing apparatus.

In order to achieve the above object, a technical means for solving the problems of the prior art is to provide a temperature isolating device for a plasma processing apparatus; the plasma processing apparatus is provided with a chamber capable of being sealed, a top of the side wall of the chamber is provided with a ring cover; the top of the chamber is composed of a dielectric window, and there is a temperature difference between the ring cover and the dielectric window; the temperature isolating device is disposed on the ring cover a top insulating ring; a top surface of the insulating ring is in contact with a portion of the bottom surface of the dielectric window to support the dielectric window, thereby isolating the dielectric window The thermally conductive contact between the ring covers prevents heat from being conducted from the dielectric window to the ring cover, reducing the temperature gradient from the center position of the dielectric window to the edge position.

In an embodiment of the invention, the heat insulating ring is made of a heat insulating or heat insulating material that is not affected by a processing reaction performed in a plasma processing apparatus, the heat insulating or heat insulating material having less than 1 W/( The thermal conductivity of mK).

In an embodiment of the invention, the heat insulating ring is made of a Teflon or quartz material.

In an embodiment of the invention, the dielectric window is made of a ceramic material; the ring cover is made of a metal material.

In an embodiment of the present invention, an annular groove is formed in a portion of the top of the ring cover that is cut away from the inner edge of the ring cover radially outward by a predetermined distance, and the heat insulating ring is embedded in the ring shape. Inside the slot.

In an embodiment of the present invention, an O-ring is embedded in the top of the ring cover, and an outer edge of the heat-insulating ring is in contact with an inner edge of the O-ring; the bottom surface of the dielectric window The outermost portion is suspended above the O-ring, and there is no thermal contact between the dielectric window and the O-ring; the bottom surface of the dielectric window is radially inward from the outermost portion The surface after extending a set distance is set as the secondary outer portion, and the sub-outer portion of the bottom surface of the dielectric window is in contact with the top surface of the heat insulating ring.

Another technical means for solving the problems of the prior art is to provide a plasma processing apparatus provided with a temperature isolating device as described above; the plasma processing apparatus is provided with a chamber capable of being sealed, a cavity The bottom of the room is provided with a base, and the base is further provided with an electrostatic clamp, and the processed substrate is placed on the top surface of the electrostatic clamp; the top of the chamber is composed of a dielectric window; outside the cavity, the dielectric An inductive antenna is disposed above the window, and after applying an RF current to the sensing antenna, a plasma of a reactive gas introduced into the reaction region can be generated in a reaction region between the substrate to be processed and the bottom of the dielectric window in the chamber. a ring cover is disposed at a top of the side wall of the chamber, and a temperature exists between the ring cover and the dielectric window Poor; the top of the ring cover is provided with a heat insulating ring, and by contacting the top surface of the heat insulating ring with a part of the bottom surface of the dielectric window, the support of the dielectric window is realized, thereby isolating the dielectric A thermally conductive contact between the window and the ring cover prevents heat from being conducted from the dielectric window to the ring cover, reducing the temperature gradient from the center position of the dielectric window to the edge position.

The insulating ring is made of an insulating or thermally insulating material that is unaffected by the processing reactions carried out in the plasma processing apparatus, the insulating or insulating material having a thermal conductivity of less than 1 W/(m-K).

In an embodiment of the invention, the heat insulating ring is made of a Teflon or quartz material.

The dielectric window is made of a ceramic material; the ring cover is made of a metal material.

In an embodiment of the present invention, an annular groove is formed at a portion of the top of the ring cover that is cut away from the inner edge of the ring cover radially outward by a predetermined distance, and the heat insulating ring is embedded in the ring shape. Inside the slot.

In an embodiment of the present invention, an O-ring is embedded in the top of the ring cover, and an outer edge of the heat-insulating ring is in contact with an inner edge of the O-ring; the bottom surface of the dielectric window The outermost portion is suspended above the O-ring, and there is no thermal contact between the dielectric window and the O-ring; the bottom surface of the dielectric window is radially inward from the outermost portion The surface after extending a set distance is set as the secondary outer portion, and the sub-outer portion of the bottom surface of the dielectric window is in contact with the top surface of the heat insulating ring.

In an embodiment of the invention, in the plasma processing apparatus, the dielectric window is dissipated by an air-cooling structure disposed above the dielectric window.

In an embodiment of the invention, the inside of the ring cover is respectively provided with a first pipe capable of conveying gas into the chamber, and a second pipe for circulating coolant to reduce the temperature of the ring cover.

In an embodiment of the invention, the interior of the chamber is vacuum or low The environment is pressed, and the outside of the chamber is an atmospheric environment.

Another technical means for solving the problems of the prior art is to provide a plasma processing apparatus provided with a chamber that can be sealed, a dielectric window mounted to the top of the side wall of the chamber, above the dielectric window An inductor is mounted; the top of the sidewall is fixed to the dielectric window by a mounting ring, and the mounting ring includes a low thermal conductive material on the upper surface in contact with the dielectric window. Forming a contact, wherein the low thermal conductive material has a thermal conductivity of less than 1 w/(mK).

In an embodiment of the invention, the upper surface of the contact portion has at least one groove.

In an embodiment of the invention, the mounting ring further includes an airtight ring surrounding the periphery of the contact portion.

The present invention provides a plasma processing apparatus and a temperature isolating apparatus therewith, which is advantageous in that the present invention is provided with a heat insulating ring of heat insulating/insulating material on the ring cover, and the top surface of the heat insulating ring and the bottom surface of the dielectric window are The contact can effectively prevent heat from being conducted from the edge position of the dielectric window toward the ring cover. Compared with the prior art, the metal ring cover is directly in contact with the dielectric window, or the ring-shaped and dielectric window made of ceramic material is used on the ring cover, and the center position to the edge position of the intermediate window of the present invention is compared. The temperature is relatively more even, and the temperature gradient is significantly reduced, so that the cracking of the dielectric window due to the temperature difference can be avoided, and a plasma processing apparatus with higher safety performance is provided.

The specific embodiments of the present invention will be further described by the following examples and the accompanying drawings.

〔this invention〕

10‧‧‧ dielectric window

12‧‧‧ outermost part

13‧‧‧ outer section

20‧‧‧ ring cover

21‧‧‧First Pipeline

22‧‧‧Second Pipeline

23‧‧‧O-ring seal

30‧‧‧ side wall

50‧‧‧Substrate

60‧‧‧Base

70‧‧‧Electrostatic fixture

80‧‧‧Insulation ring

[study]

100‧‧‧ dielectric window

110‧‧‧Contact surface location

200‧‧‧ ring cover

210, 220‧‧‧ pipeline

300‧‧‧ chamber

400‧‧‧Sensor antenna

500‧‧‧Substrate

600‧‧‧Base

700‧‧‧Electrostatic fixture

1 is a schematic view showing the overall structure of a conventional plasma processing apparatus; and FIG. 2 is an enlarged junction of a contact position between a dielectric window and a ring cover of a conventional plasma processing apparatus. FIG. 3 is a schematic view showing the overall structure of a plasma processing apparatus with a temperature isolation device according to the present invention; FIG. 4 is an enlarged view of a contact position between a dielectric window and a ring cover of a plasma processing apparatus with a temperature isolation device according to the present invention; FIG. 5 to FIG. 10 are graphs comparing the temperature of the center position and the edge position of the dielectric window obtained by the prior art and the plurality of test examples of the present invention, wherein: FIG. 5 is not in the ring cover in the prior art. A heat-insulating ring is provided, and the temperature of the center position and the edge position of the dielectric window when the dielectric window accumulates 2.3 KW of heat and is cooled by the air-cooling structure; FIG. 6 is that the heat insulation is not provided on the ring cover in the prior art. The temperature of the center and edge of the dielectric window when the dielectric window accumulates 2.5 KW of heat and dissipates heat through the air-cooled structure. Figure 7 shows the thermal insulation of the same ceramic material as the dielectric window on the ring cover. The temperature of the center position and the edge position of the dielectric window when the dielectric window accumulates 2.5 KW of heat and dissipates heat through the air-cooled structure; Figure 8 shows the same ceramic material as the dielectric window on the ring cover. The heat insulating ring has different structure of the heat insulating ring. When the dielectric window accumulates 2.5 KW of heat and dissipates heat through the air-cooling structure, the temperature of the center position and the edge position of the dielectric window is schematic; FIG. 9 is a schematic diagram of the present invention. In one embodiment, a heat insulating ring of quartz material is disposed on the ring cover, and the temperature of the center position and the edge position of the dielectric window when the dielectric window accumulates 2.5 KW of heat and dissipates heat through the air-cooling structure; FIG. 10 is In another embodiment of the invention, a heat-insulating ring of Teflon material is disposed on the ring cover, and the temperature of the center position and the edge position of the dielectric window when the dielectric window accumulates 2.5 KW of heat and dissipates heat through the air-cooled structure. schematic diagram.

Referring to FIG. 3 and FIG. 4, the plasma provided in this embodiment The processing device is an inductively coupled plasma processing apparatus provided with a chamber, and the inside and the outside of the chamber side wall 30 can be hermetically sealed, so that the pressure inside the chamber can be set to a vacuum or a low pressure environment, and the outside of the chamber is generally For the atmospheric environment. Hereinafter, on the respective components, the side close to the vacuum environment is referred to as "inside", "inner edge", etc., and the side away from the vacuum environment and close to the atmospheric environment is referred to as "outer side", "outer edge", and the like.

A susceptor 60 is disposed at the bottom of the chamber, and an electrostatic chuck 70 is further disposed on the susceptor 60. The processed substrate 50 (for example, a semiconductor wafer, a glass substrate, etc.) is placed on the top surface of the electrostatic chuck 70. A dielectric window 10 of ceramic material (Al ₂ O ₃ ) is disposed at the top of the chamber. An RF RF current is applied to the coiled inductive antenna 40 located outside the chamber, above the dielectric window 10, thereby generating a plasma of the reactive gas in the reaction zone between the substrate to be processed 50 and the bottom of the dielectric window 10 in the chamber.

A ring cover 20 is disposed at the top of the side wall 30 of the chamber, and the side wall 30 and the ring cover 20 of the chamber are respectively made of a metal material such as aluminum Al or an alloy thereof. Moreover, the top of the ring cover 20 is formed as an annular groove at a certain distance extending outward from the inner edge, and the heat insulating ring 80 is disposed in the groove, and the top surface of the heat insulating ring 80 on the ring cover 20 contacts the dielectric. A portion of the bottom surface of the window 10 (generally a portion of the bottom surface of the dielectric window 10 that extends inwardly from the outer edge) is supported. The inside of the ring cover 20 is also internally provided with a first duct 21 for conveying gas into the chamber, and a second duct 22 for circulating the coolant.

The heat insulating ring 80 can be made of various heat insulating or heat insulating materials, and the corresponding materials of the heat insulating ring 80 can be selected according to a specific process, so that the heat insulating ring 80 can be reacted without reaction gas and plasma treatment. Impact. In a preferred embodiment, the insulating or insulating material has a thermal conductivity of less than 1 W/(m-K). For example, the insulation ring 80 can be made of Teflon or quartz material.

In the preferred embodiment, as shown in FIG. 4, an O-ring 23 is embedded in the top of the ring cover 20. The groove on the top of the ring cover 20, extending radially from a position below the inner edge of the O-ring 23 to the inner edge of the ring cover 20, may be removed to form the above-described groove for mounting the heat insulating ring 80. Then, you can adjust the insulation ring The outer edge shape of the upper portion of the 80 allows the outer edge of the insulating ring 80 to conform to the inner edge of the O-ring 23. The inner edge of the insulating ring 80 does not exceed the inner edge of the ring cover 20 below it, and the two can be aligned with each other.

At this time, the entire bottom surface of the dielectric window 10 is not directly in contact with the top surface of the ring cover 20; and the top surface of the O-ring 23 is lower than the top surface of the heat insulating ring 80, so that the bottom surface of the dielectric window 10 The outermost portion 12 is suspended above the O-ring 23 and is not in contact with each other; then passes through the secondary outer portion 13 on the bottom surface of the dielectric window 10 (i.e., the portion of the surface extending inward from the outermost portion 12) and The top surface of the heat insulating ring 80 is in contact. Therefore, the arrangement of the heat insulating ring 80 can block heat from being transmitted from the edge position of the dielectric window 10 to the ring cover 20, effectively reducing the temperature gradient from the center position to the edge position of the dielectric window 10.

In the plasma processing apparatus of the present invention, heat dissipation is achieved to the dielectric window 10 by an air-cooling structure. For example, a fan (not shown) may be disposed above the dielectric window 10.

According to other embodiments, the present invention further provides an inductively coupled plasma reactor provided with a chamber capable of being sealed, a dielectric window 10 mounted to the top of the side wall 30 of the chamber, and an inductor mounted above the dielectric window 10 a coil; wherein a top portion of the side wall 30 and the dielectric window 10 are fixed by a mounting ring, and the mounting ring includes a contact made of a low thermal conductive material on an upper surface in contact with the dielectric window 10. And wherein the low thermal conductivity material has a thermal conductivity of less than 1 w/(mK). Preferably, the upper surface of the contact portion has at least one groove. The mounting ring also includes an airtight ring surrounding the periphery of the contact portion.

Six test examples are provided below, corresponding to the graphs shown in FIGS. 5-10, comparing the conventional technique with the plasma processing apparatus of the present invention, and whether or not the heat insulating ring 80 is provided on the ring cover 20. The temperature change from the center position to the edge position on the dielectric window 10 is measured by selecting the heat insulating ring 80 or the like of different materials or structures, thereby demonstrating the beneficial effects of the present invention for reducing the temperature gradient. In each figure, the abscissa indicates the radius distance R from the arbitrary position of the dielectric window 10 to the center of the circle, and the ordinate indicates the dielectric. The temperature at this location on window 10.

In the following table, the material of the heat insulating ring 80 or the ring cover 20 which is in contact with the edge position of the dielectric window 10 (the first column) and the temperature shown in the last row (unit: Corresponding coefficients under Kelvin, for example, specific heat, heat transfer, density, thermal expansion, Young's modulus, Poisson's ratio, tensile strength. In the last column, a description of which test instance a particular material is applied to is used.

As shown in FIG. 5, in the first test example described in the prior art, the heat insulating ring 80 is not provided, but the ring cover 20 is directly in contact with the dielectric window 10, and therefore, the position in contact with the dielectric window 10 is equivalent. Aluminum Al was used. During the test, the side wall 30 of the chamber and the ring cover 20 were 25 ° C, the dielectric window 10 accumulated 2.3 KW of heat, and the fan with a wind volume of 360 CFM (cubic feet per minute) was used as the air-cooled structure for heat dissipation. The TC curve of 5, the temperature at the center of the dielectric window 10 is 134 ° C, and the temperature difference ΔT between the center position to the edge position of the dielectric window 10 is about 107 ° C. Then, the safety margin obtained in this test example is ×2. Wherein, the center position of the dielectric window 10 refers to a position with a radius of 0 mm, and the edge position refers to a position with a radius of about 250 mm. The dX and dY curves shown in FIG. 5 are the expansion dimensions of the dielectric window 10 in the horizontal direction and the vertical direction, respectively, and the other dX and dY curves have the same meanings as shown in FIGS. 6 to 10.

In the other tests conducted below, the same air-cooling structure as described above (ie, a fan with a wind volume of 360 CFM) was used to dissipate heat, and the same chamber side wall 30 and the temperature of the ring cover 20 (25 ° C) were The description of the radius of the center position and the edge position of the electric window 10 is also basically the same (that is, the temperature change from the 0 mm to the radius of 250 mm on the dielectric window 10 is probed), and therefore the parameters of these test conditions are not repeated. description.

As shown in FIG. 6, in the second test example described in the prior art, the heat insulating ring 80 is not provided, and the ring cover 20 is directly in contact with the dielectric window 10. Different from the above test examples, the heat stored in the dielectric window 10 is different, and 2.5 kW of heat is accumulated in this example; in the following other test cases, 2.5 kW of heat is also accumulated; see the TC curve of FIG. In this example, the temperature at the center of the dielectric window 10 was measured at 143 ° C, and the temperature difference ΔT between the center position and the edge position of the dielectric window 10 was about 116 ° C, and the safety factor was 1.9. Therefore, the first test example described above is similar to the test example. Since the ring cover 20 is in direct contact with the dielectric window 10, the temperature gradient is large and the safety factor is low.

In the third test example shown in FIG. 7, an 8 mm high heat insulating ring 80 is placed on the ring cover 20 in contact with the dielectric window 10, and is made of the same material as the ceramic material used for the dielectric window 10. In the other test cases below, the same height (8 mm) of the heat insulating ring 80 was also used. Referring to the TC curve of FIG. 7, the temperature of the center position of the dielectric window 10 is 148 ° C in this example, and the temperature difference ΔT between the center position and the edge position of the dielectric window 10 is greater than 100 ° C (about 107 ° C). , safety factor × 2. Therefore, compared with the above examples 1, 2, the test example shows that the temperature gradient is not actually reduced, and the safety factor is not actually improved.

In the fourth test example shown in FIG. 8, a similar test example 3 is also provided with a heat insulating ring 80 of a ceramic material on the ring cover 20, and also changes the structure of the heat insulating ring 80, for example, in the heat insulating ring. The top surface of the 80 is notched, etc., so that the shape of the surface of the heat insulating ring 80 in contact with the dielectric window 10 is different, and the area of the contact surface of the heat insulating ring 80 and the dielectric window 10 is reduced by half, so as to reduce the thermal conductivity. . Referring to the TC curve of FIG. 8, in this example, the temperature at the center of the dielectric window 10 is 150 ° C, and the temperature difference ΔT between the center position and the edge position of the dielectric window 10 is greater than 100 ° C (about 105 ° C). , safety factor × 2. Therefore, compared with the above examples 1, 2, and 3, the test examples have no substantial difference in temperature gradient and safety factor.

In the fifth test example shown in FIG. 9, a heat insulating ring 80 made of a quartz material is used in contact with the dielectric window 10 according to a preferred embodiment of the present invention, and the arrangement position and shape of the heat insulating ring 80 may be See the description above. Then, as shown in the TC curve of FIG. 9, the temperature of the center position of the dielectric window 10 is 175 ° C in this example, and the temperature difference ΔT between the center position and the edge position of the dielectric window 10 is about 75 ° C, and the safety factor is obtained. ×3.3. Therefore, compared with any of the above test examples 1 to 4, the test example reduces the temperature gradient and the safety factor is also improved.

In a sixth test example shown in FIG. 10, according to another preferred embodiment of the present invention, a heat insulating ring 80 made of a Teflon material is used in contact with the dielectric window 10, and the heat insulating ring 80 is disposed at a position and The shape and the like can also be referred to the above description. Then, as shown in the TC curve of FIG. 10, the temperature of the center position of the dielectric window 10 is 185 ° C in this example, and the temperature difference ΔT between the center position and the edge position of the dielectric window 10 is about 57 ° C, and the safety factor is obtained. ×4. Therefore, compared with any of the above test examples 1 to 4, the test example greatly reduces the temperature gradient and the safety factor is also significantly improved.

In summary, the present invention can effectively prevent heat from being transmitted from the edge position of the dielectric window 10 to the ring cover 20 due to the contact of the heat insulating ring 80 provided with the heat insulating/insulating material on the ring cover 20 with the dielectric window 10. Therefore, the temperature of the center position to the edge position of the dielectric window 10 is relatively more average, and the temperature gradient is reduced, thereby avoiding the cracking phenomenon of the dielectric window 10 due to the temperature difference, thereby providing a higher safety separation. Sub processing device.

Although the present invention has been described in detail by the preferred embodiments thereof, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those skilled in the art. Therefore, the scope of the invention should be defined by the appended claims.

10‧‧‧ dielectric window

12‧‧‧ outermost part

13‧‧‧ outer section

20‧‧‧ ring cover

21‧‧‧First Pipeline

22‧‧‧Second Pipeline

23‧‧‧O-ring seal

30‧‧‧ side wall

80‧‧‧Insulation ring

Claims (16)

A temperature isolating device for a plasma processing apparatus; the plasma processing apparatus is provided with a chamber capable of being sealed, a top of the side wall (30) of the chamber is provided with a ring cover (20), the top of the chamber Formed by a dielectric window (10), a temperature difference exists between the ring cover (20) and the dielectric window (10), wherein: the temperature isolating device is disposed at the top of the ring cover (20) An insulating ring (80), a top surface of the heat insulating ring (80) is in contact with a portion of the bottom surface of the dielectric window (10) to support the dielectric window (10), thereby isolating the dielectric window (10) thermally contacting the ring cover (20) to prevent heat from being conducted from the dielectric window (10) to the ring cover (20), reducing the center position of the dielectric window (10) to the edge position a temperature gradient is formed on the top of the ring cover (20) by cutting off a portion of the ring cover (20) radially outwardly extending a predetermined distance to form an annular groove, and the heat insulation ring (80) is embedded in the temperature Inside the annular groove. The temperature isolating device of claim 1, wherein the heat insulating ring (80) is made of a heat insulating or heat insulating material that is not affected by a processing reaction performed in a plasma processing apparatus, the heat insulating or heat insulating material. Has a thermal conductivity of less than 1 W/(mK). The temperature isolating device of claim 2, wherein the heat insulating ring (80) is made of a Teflon or quartz material. The temperature isolating device of claim 1, wherein the dielectric window (10) is made of a ceramic material; and the ring cover (20) is made of a metal material. The temperature isolating device of claim 1, wherein the top of the ring cover (20) is embedded with an O-ring (23), and the outer edge of the heat insulating ring (80) is The inner edge of the O-ring (23) is attached; the outermost portion (12) of the bottom surface of the dielectric window (10) is suspended above the O-ring (23). There is no thermal contact between the electric window (10) and the O-ring (23); the surface of the dielectric window (10) is radially inwardly extended from the outermost portion (12) by a set distance When the sub-outer portion (13) is set, the sub-outer portion (13) of the bottom surface of the dielectric window (10) is in contact with the top surface of the heat-insulating ring (80). A plasma processing apparatus provided with the temperature isolating device as claimed in claim 1, wherein the plasma processing apparatus is provided with a chamber capable of being sealed, and a bottom (60) and a base are provided at the bottom of the chamber ( 60) further comprising an electrostatic chuck (70), the processed substrate (50) being placed on the top surface of the electrostatic chuck (70); the top of the chamber being composed of a dielectric window (10); outside the chamber, An induction antenna (40) is disposed above the dielectric window (10), and after applying RF RF current to the sensing antenna (40), it can be located above the processed substrate (50) and the dielectric window in the chamber (10) a reaction zone between the bottoms, generating a plasma of a reaction gas introduced into the reaction zone; a top cover (20) is provided with a ring cover (20) at the top of the chamber, the ring cover (20) and the dielectric There is a temperature difference between the windows (10); the top of the ring cover (20) is provided with a heat insulating ring (80), and by making the top surface of the heat insulating ring (80), and the dielectric window ( 10) a portion of the bottom surface is in contact to support the dielectric window (10), thereby isolating the thermal contact between the dielectric window (10) and the ring cover (20) to prevent Heat is conducted from the dielectric window (10) to the ring cover (20), reducing the temperature gradient from the center position to the edge position of the dielectric window (10); and the ring cover is cut off at the top of the ring cover (20) ( 20) The inner edge extends radially outwardly for a predetermined distance to form an annular groove, and the heat insulating ring (80) is embedded in the annular groove. The plasma processing apparatus of claim 6, wherein the heat insulating ring (80) is made of an insulating or heat insulating material that is not affected by a processing reaction performed in the plasma processing apparatus, the heat insulating or heat insulating. The material has a thermal conductivity of less than 1 W/(mK). The plasma processing apparatus of claim 7, wherein the heat insulating ring (80) is made of a Teflon or quartz material. The plasma processing apparatus of claim 6, wherein the dielectric window (10) is made of a ceramic material; and the ring cover (20) is made of a metal material. The plasma processing apparatus of claim 6, wherein the top of the ring cover (20) is embedded with an O-ring (23), an outer edge of the heat insulating ring (80) and the O-ring ( 23) an inner edge of the same; the outermost portion (12) of the bottom surface of the dielectric window (10) is suspended above the O-ring (23), the dielectric window (10) There is no heat-conducting contact between the O-rings (23); the surface of the bottom surface of the dielectric window (10) extending radially inward from the outermost portion (12) by a set distance is set as the secondary outer portion (13) And the sub-outer portion (13) of the bottom surface of the dielectric window (10) is in contact with the top surface of the heat insulating ring (80). A plasma processing apparatus according to claim 6, wherein in the plasma processing apparatus, the dielectric window (10) is dissipated by an air-cooling structure disposed above the dielectric window (10). The plasma processing apparatus of claim 6, wherein the ring cover (20) is inside The first pipe (21) capable of conveying gas into the chamber and the second pipe (22) for circulating coolant to reduce the temperature of the ring cover (20) are respectively opened. The plasma processing apparatus according to claim 6, wherein the inside of the chamber is a vacuum or a low pressure environment, and the outside of the chamber is an atmospheric environment. A plasma processing apparatus provided with a chamber capable of being sealed, a dielectric window (10) mounted to the top of the side wall (30) of the chamber, and an inductor coil mounted above the dielectric window (10); wherein the side wall (30) The top portion is fixed to the dielectric window (10) by a mounting ring, and the mounting ring includes a contact portion made of a low thermal conductive material on the upper surface in contact with the dielectric window (10). Wherein the low thermal conductivity material has a thermal conductivity of less than 1 w/(mK). The plasma processing apparatus of claim 14, wherein the upper surface of the contact portion has at least one groove. The plasma processing apparatus of claim 14, wherein the mounting ring further comprises an airtight ring surrounding the periphery of the contact portion.