CN100477091C - Processor - Google Patents
Processor Download PDFInfo
- Publication number
- CN100477091C CN100477091C CNB2006800011989A CN200680001198A CN100477091C CN 100477091 C CN100477091 C CN 100477091C CN B2006800011989 A CNB2006800011989 A CN B2006800011989A CN 200680001198 A CN200680001198 A CN 200680001198A CN 100477091 C CN100477091 C CN 100477091C
- Authority
- CN
- China
- Prior art keywords
- block
- container handling
- processing unit
- segment body
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
Provided is a structure of an improved processing container for a processing apparatus which processes a subject to be processed, such as a semiconductor wafer, which is heated in the metal tube-like processing container by using a processing gas. The processing container (34) is composed of a plurality of block bodies (80, 82, 84) mutually connected by being stacked in the vertical direction. Vacuum heat insulating layers (86, 88) are arranged between the adjacent block bodies. Thus, heat transfer between block bodies is suppressed, temperature of each block body can be separately controlled, and energy efficiency is improved.
Description
Technical field
Employed processing unit when the present invention relates to that handled objects such as semiconductor wafer are carried out predetermined processing.
Background technology
Generally, in order to produce semiconductor products such as integrated circuit, semiconductor wafers such as silicon substrate are carried out film forming processing, oxide-diffused processing, etch processes, modification processing, annealing in process various processing such as (annealing treatment) repeatedly.The using plasma processing unit carries out processing (for example with reference to JP2003-257933A) such as film forming, etching, ashing sometimes.Recently, because microwave plasma (microwave plasma) also can stably form this advantage of high-density plasma even device has in the high vacuum state about 0.1mTorr (13.3mPa)～number 10mTorr (several Pa), and the tendency of frequently being used is arranged.This plasma processing apparatus is disclosed in the patent documentations such as JP3-191073A, JP5-343334A, JP9-181052A.
Figure 11 is the sectional view that the structure of microwave plasma processing apparatus general in the prior art represented in summary.In microwave plasma processing apparatus 2, in the container handling 4 that can vacuumize, be provided with the mounting table 6 of mounting semiconductor wafer W.Hermetic be installed in by aluminium nitride that penetrates microwave or quartzy and discoideus top board 8 that form in the ceiling portion of the container handling 4 relative with mounting table 6.The sidewall of container handling 4 is provided with and is used for and will handles the gas nozzle 9 that gas imports container.
The top of top board 8 be provided with thickness count about mm discoideus planar antenna member 10 and in order to shorten and stagnant ripple (slow wave) part 12 that forms by dielectric along the wavelength of the microwave of this planar antenna member 10 radial directions.On planar antenna member 10, be formed with the microwave radiation hole 14 of a plurality of elongate slot (slot) shape.Be connected with the center conductor 18 of coaxial waveguide 16 on the central part of planar antenna member 10.After the microwave of the 2.45GHz that is produced by microwave generator 20 is transformed into the vibration mode of regulation by mode converter 22, be imported into planar antenna member 10.Microwave when the radial direction to antenna element 10 is radial spread, 14 radiation from the microwave radiation hole, and penetrate top board 8 and be imported in the container handling 4.Produce from the plasma of handling gas in the processing space S by the energy of this microwave in container handling 4, and utilize double wafer conductor W of this plasma to carry out the plasma treatment of regulations such as etching or film forming.
By plasma CVD (chemical vapour deposition (CVD): Chemical Vapor Deposition) when carrying out film forming, in order to prevent on the side wall inner surface of container handling, to adhere to unwanted film, even perhaps also can be easy to clean and remove, need when film forming, the side wall inner surfaces of container handling be kept the high temperature about certain sometimes by dry type in order to have adhered to unwanted film.For example, adopting CF is that gas is handled by plasma CVD and when carrying out the film forming of carbon fluorine (fluorocarbon) film (interlayer dielectric) of low-k on wafer, if the temperature of the side wall inner surfaces of container handling is lower, then be easy to pile up unwanted film at this, in addition, the unwanted film of this that adheres at low temperatures is difficult to remove by the dry type cleaning.
For solving described problem, as shown in figure 11, count inboard about mm in the side wall inner surfaces of leaving container handling 4, be provided with the inwall (inner wall) 24 about the thickness 4～9mm of heater internally-arranged type along side wall inner surfaces.When carrying out film forming,, can prevent that unwanted film is deposited in the inwall inboard by inwall 24 is heated to about 100～200 ℃.In addition, the refrigerant passage 26 that the circulation cold-producing medium is used is set in the sidewall of container handling 4, by the cold-producing medium that circulates at this, can be with the safe temperature of temperature maintenance about 90 ℃ of container handling 4.
But there is following problem in described solution.At first, if inwall 24 is set, will change because the outer space of wafer W radial direction narrows down thereby flows through wafer W air-flow on every side, in addition, the radiant heat that wafer W is subjected to also will change.Therefore, there is the danger of the inner evenness reduction of thickness.In addition, even inwall 24 is heated, if just but handle a large amount of wafer W and can't avoid the problem of piling up unwanted film.As previously mentioned, if the distance between wafer W and the inwall 24 is less, then the accumulation owing to unwanted film causes the inner wall surface state to change gradually, thus, and the danger that exists the thickness reproducibility to descend.Although can solve described problem by the size that the space is set that only size of container handling 4 is increased inwall 24, if the size of container handling 4 increases, then the institute of device takes up space and increases thereupon, because of rather than preferred version.
Have again, during when the cooling of the sidewall that carries out container handling 4 simultaneously with the heating of the container handling 4 contiguous inwalls 24 that are provided with, because the effect of offseting of heats and cooling effect causes energy dissipation, the problem that exists energy efficiency to reduce.In addition, in structure shown in Figure 11, can't carry out above-below direction with container handling relevant, make it to produce the temperature control of Temperature Distribution consciously, particularly have the problem that can't carry out local cooling to specific part.
Summary of the invention
The present invention proposes in view of above-mentioned prior art problems, and its main purpose is and can carries out temperature control respectively to the various piece of container handling, and, improve with the heating of container handling with and/or cool off relevant energy efficiency.
For achieving the above object, the invention provides a kind of processing unit that handled object is carried out predetermined processing, but have exhaust metal container handling, import gas introduction unit in the above-mentioned container handling for the mounting handled object is arranged on mounting table in the above-mentioned container handling, is used to heat the heater block of handled object and will handles gas, above-mentioned container handling is formed by interconnective a plurality of blocks, is provided with vacuum heat-insulating layer between block between the block of adjacency.
Thus, owing to the vacuum heat-insulating layer that is arranged between block suppresses the heat conduction between block, thereby can distinguish efficient temperature control to each block.
In a preferred embodiment of the present invention, the block of above-mentioned adjacency is provided with in the mode that adjoins each other at above-below direction, vacuum heat-insulating layer between above-mentioned block is by at the block of above-mentioned above-below direction adjacency and sealing airtightly is arranged on interior all sides in gap between block between these blocks and the packaged unit of outer circumferential side constitutes, and this processing unit also comprises the vacuum pumping system that vacuumizes and make it to work as vacuum heat-insulating layer between above-mentioned block in the gap between above-mentioned block.
In a preferred embodiment of the present invention, not directly contact mutually between the block of above-mentioned adjacency.Be used for preferably being arranged on above-mentioned in abutting connection with between the block at the distance member that forms the nonmetal system in gap between above-mentioned block between the block of above-mentioned adjacency.
In a preferred embodiment of the present invention, the protected cap assembly of the outer peripheral face of at least one block hides in above-mentioned a plurality of blocks, and outside vacuum heat-insulating layer is set between above-mentioned outer peripheral face and the protective cover parts.Above-mentioned outside vacuum heat-insulating layer can by above-mentioned block and above-mentioned protective cover parts and will be arranged on therebetween outer side clearance both ends air-tightness sealing packaged unit and constitute.Above-mentioned processing unit further preferably has the vacuum pumping system that vacuumizes and make it to work as above-mentioned outside vacuum heat-insulating layer to above-mentioned outer side clearance.Vacuumize by the communicating pipe connection and by common vacuum pumping system between the preferred above-mentioned block gap and between the outer side clearance.
In a preferred embodiment of the present invention, at least one in above-mentioned a plurality of blocks is provided with the block heater block, or the block cooling-part.Preferably carry out following setting, that is: block heater block that this block is heated or the block cooling-part that cools off are set on above-mentioned each block; On above-mentioned each block, be provided for the temperature detection part that the temperature to this block detects; The above-mentioned block heater block or the above-mentioned block cooling-part that are arranged on above-mentioned each block are connected with temperature control unit; The said temperature control unit, for making above-mentioned each block temperature become desired value, according to the temperature of detected each block and the above-mentioned block heater block or the above-mentioned block cooling-part that are arranged on above-mentioned each block are controlled by this temperature detection part.Above-mentioned each block can be controlled to different temperature respectively.
In a preferred embodiment of the present invention, this processing unit also comprises in order to produce plasma in above-mentioned container handling form electric field in above-mentioned container handling, the plasma of magnetic field or electromagnetic field forms the unit, perhaps the plasma that will produce outside above-mentioned container handling is supplied to the plasma importing unit in the above-mentioned container handling, between above-mentioned block gap, be provided with the plasma that is used to prevent in the container handling than more inner interior all sides of the seal member of all sides in above-mentioned and invade plasma between the above-mentioned block gap and invade and prevent to use ring component.In a preferred implementation, above-mentioned processing unit has above-mentioned plasma and forms the unit; Above-mentioned plasma forms the unit by microwave or high frequency waves being supplied to the supply part in the above-mentioned container handling and constituting, have electrically conducting between the block that makes above-mentioned adjacency between the above-mentioned block gap and be used to prevent microwave or high frequency waves to the shield member of the external leaks of above-mentioned container handling.
In a preferred embodiment of the present invention, above-mentioned processing unit has above-mentioned plasma and forms the unit, above-mentioned plasma forms the unit and constitutes by microwave is supplied to the supply part in the above-mentioned container handling, ceiling portion at above-mentioned container handling is provided with the top board that makes microwave penetrating, and above-mentioned top board is provided with and is used for microwave is imported planar antenna member in the above-mentioned container handling.
In a preferred embodiment of the present invention, above-mentioned a plurality of block comprises: the upper strata block that supports above-mentioned top board; Import the part of unit as above-mentioned gas, supporting will be handled gas and be expelled to the spue middle level block of portion of the interior gas of above-mentioned container handling; And the corresponding lower floor's block of part that is positioned at above-mentioned mounting table.
In a preferred embodiment of the present invention, above-mentioned middle level block is by constituting at a plurality of segment bodies (piece) of above-below direction lamination, the portion that spues of a segment body supporting above-mentioned gas in above-mentioned a plurality of segment bodies beyond the orlop segment body.In a preferred embodiment of the present invention, above-mentioned a plurality of segment body adopts following frame mode, that is: the segment body in the above-below direction adjacency carries out lamination with the form of direct contact, the spue segment body of portion of above-mentioned upper strata block and supporting above-mentioned gas is combined into one, the spue segment body of portion of supporting above-mentioned gas can separate from certain segment body that is positioned at the below, and is provided with above-mentioned upper strata block and supporting above-mentioned gas are spued development mechanism that the segment body one of portion launches.In other preferred implementations, above-mentioned middle level block has three segment bodies, be provided with the compression ring structure of supplying with purgative gas in the upper strata segment body in above-mentioned three segment bodies, the above-mentioned gas portion of spuing is supported on the middle level segment body in above-mentioned three segment bodies, above-mentioned upper strata block and above-mentioned upper strata segment body and above-mentioned middle level segment body are linked by one, lower floor's segment body in above-mentioned three segment bodies can separate from above-mentioned middle level segment body, be provided with the development mechanism that above-mentioned upper strata block and above-mentioned upper strata segment body and above-mentioned middle level segment body one are launched, by making this development mechanism action, form by incorporate above-mentioned upper strata block and above-mentioned upper strata segment body and above-mentioned middle level segment body, can be from above-mentioned lower floor segment body separated structures form.
Description of drawings
Fig. 1 is the sectional view of an execution mode of the processing unit that the present invention relates to of expression.
Fig. 2 is the plane graph of expression container handling lower floor's piece (block) body.
Fig. 3 is the part amplification sectional view of the sidewall sections of expression container handling.
Fig. 4 is the exploded view of expression container handling part.
Fig. 5 is the figure of the binding that utilizes metal bolts between the explanation block.
Fig. 6 be expression in the vacuum heat-insulating layer pressure and interval (gap) to the curve chart of the influence of heat flux (heat flux).
Fig. 7 be the expression the present invention relates to processing unit container handling first the distortion example local amplification sectional view.
Fig. 8 is the local amplification sectional view that expression the present invention relates to the second distortion example of processing unit.
Fig. 9 is the local amplification sectional view of the expression position that is used to illustrate that container handling can separate.
Figure 10 is the figure of the state after the segment of expression upper strata block and the middle level block that combines with it is launched.
Figure 11 is the summary construction diagram of the general plasma processing apparatus of expression prior art.
Embodiment
Below, with reference to accompanying drawing, preferred implementation of the present invention is described.In addition, note that in the accompanying drawings, this part has been carried out amplifying especially for the ease of the structure of the sidewall sections of container handling is understood and show.In the present embodiment, processing unit forms as microwave plasma processing apparatus 32.
As shown in Figure 1, plasma processing apparatus 32 has the container handling 34 that forms tubular on the whole, forms Packed processing space S in the inside of container handling 34.The sidewall and the diapire of container handling 34 are made of metals such as aluminium.Container handling 34 is by electrical grounding.
In container handling 34, contain handled object, for example semiconductor wafer W mounting discoideus mounting table 36 thereon.Mounting table 36 can be formed by the aluminium that has been carried out alumina treatment (alumite treatment).Pillar 38 supportings that mounting table 36 is erected by the diapire from container handling 34, that form by the insulating properties material.In mounting table 36, be embedded with suitable heater, for example resistance heater 40, be used to heat mounting wafer W in the above.Be provided with the electrostatic chuck (electrostaticchuck) that is used to keep wafer W on the top of mounting table 36 or clamp (clamp) mechanism (not shown).In addition, mounting table 36 also might with assigned frequency for example the biasing of 13.56MHz (bias) be connected with high frequency electric source.
The gas that is provided with shower nozzle 44 forms above mounting table 36 portion 42 that spues is used for the gas of needs is ejected in this container handling 34.In the execution mode that exemplifies, shower nozzle 44 constitutes by see a plurality of quartz ampoules that are the arrangement of grid shape from the plane, and the arrangement pitches of quartz ampoule is about 5cm.Shower nozzle 44 is installed on the sidewall of container handling 34, is supported by this sidewall.A plurality of gas jetting hole 44A that shower nozzle 44 can form from side in its lower section drain into the processing space S with processings gases such as film forming gas with the flow through controlling.In addition, the structure of shower nozzle 44 is not limited to described form.
As shown in Figure 2, the sidewall of container handling 34 is provided with gate valve 46, and this gate valve 46 is opened when wafer being moved into and take out of container handling 34.Vessel bottom wall is provided with exhaust outlet 48.On exhaust outlet 48, be connected with the exhaust channel 54 that pressure-regulating valve 50 and vacuum pump 52 are being set, in view of the above, as required, can will be evacuated to the pressure of expectation in the container handling 34.Container handling 34 has opening in ceiling portion, the microwave penetrating top board 56 that this opening forms by ceramic materials such as quartz or aluminium oxide, and quilt is hermetic inaccessible via seal members 58 such as O shape rings.Consider compressive property, the thickness of top board 56 is set to about 20mm.
The periphery of waveguide case 66 and planar antenna member 62 is electrical grounding all.The outer conductors 68A of coaxial waveguide 68 is connected the central upper portion portion of waveguide case 66.Be arranged on the center through hole of the stagnant ripple spare 64 of center conductor 68B break-through of outer conductors 68A inside, be connected with the central part of planar antenna member 62.Coaxial waveguide 68 via mode converter 70, waveguide 72 and adaptation 74 with produce assigned frequency for example the microwave generator 76 of 2.45GHz microwave be connected.The frequency of microwave is not limited to 2.45GHz, also can be other frequencies, for example 8.35GHz.In addition, can use the waveguide of cross section, or use coaxial waveguide as circle or rectangle as waveguide.
When handled object was the wafer of 8 feet sizes, the diameter that can set planar antenna member 62 was 300～400mm.In the present embodiment, planar antenna member 62 is the conductive material of 1～number mm by thickness, and for example the copper coin of electroplate or aluminium sheet form.The a plurality of microwave radiation hole 62A that is formed by elongated through hole and even slit is formed on the planar antenna member 62.The collocation form of microwave radiation hole 62A can be concentric circles, whirlpool shape or radial, perhaps also it can be evenly distributed on 62 whole of the antenna elements.
Particularly as Fig. 3 and Fig. 4 in detail shown in, container handling 34 by a plurality of, be that block 80,82,84 by three endless metal systems constitutes herein.In other words, by cutting off container handling 34 and this container handling 34 be divided into a plurality of blocks along horizontal plane.Block 80,82,84 is carried out lamination along the vertical direction, and vacuum heat-insulating layer (vacuum heat-insulating layer between block) 86,88 is set in the boundary portion between block.
In the present embodiment, the sidewall of container handling 34 be divided into top support plate 56 upper strata block 80, supporting shower nozzle 44 middle level block 82 and corresponding to lower floor's block 84 of the height and position of mounting table 36.The bottom of lower floor's block 84 is connected in the mode that direct metal contacts with the diapire 90 of container handling 34, carries out combination by not shown metal bolts.Between lower floor's block 84 and diapire 90, be provided with seal members 92 such as O shape ring.The protective cover parts 98,100 that the outer peripheral face of middle level block 82 and lower floor's block 84 is formed by stainless steel and other metal materials cover.Between middle level block 82 and lower floor's block 84 and protective cover parts 98,100, be respectively arranged with outside vacuum heat-insulating layer 94,96.Be respectively arranged with resinous outer cover body 98A, 100A on the outer surface of protective cover parts 98,100, in order to improve the fireproof fail safe.
Especially as shown in Figure 3, be respectively arranged with interval (spacer) parts 102,104 of a plurality of nonmetal systems between the block 82,84 of the block 80,82 of adjacency and adjacency, (gap between block) is the size of vacuum heat-insulating layer in abutting connection with the gap between block in order to adjust.Distance member 102,104 has cuboid or cube shaped and uniformly-spaced configuration along the circumferential direction.As represent shown in Figure 2 above lower floor's block 84, along the circumferential direction dispose a plurality of, four distance members 104 for example.The quantity of distance member 104 is not limited to illustrated embodiment.Distance member 102,104 is in order to suppress the heat conduction between block, by the material of nonmetal system, and the polyimide resin of low heat conductivity and forming for example.
The shape of each block can be different.As shown in Figure 2, the shape of lower floor's block 84 is seen as quadrangle from the plane.Middle level block 82 also can form the octagonal shape of seeing from the plane.Complicated for fear of drawing in Fig. 1, Fig. 3 and Fig. 4 etc., each block 80,82,84 is all represented with identical cross sectional shape.
In the present embodiment, in order to form vacuum heat-insulating layer 86,88, the annular recessed portion 106,108 of the relative broad that will extend along the peripheral direction of container handling 34 be formed on middle level block 82 and lower floor's block 84 above.Annular seal groove 110,112 and 114,116 is formed on the interior all sides and outer circumferential side of this recess 106,108.Be separately installed with seal member 110A, 112A and 114A, 116A such as O shape ring in each seal groove 110,112 and 114,116. Block 80,82,84 if mutually combine, and then the interior circumferential portion of recess 106,108 and outer peripheral portion are sealed airtightly by seal member 110A, 112A and 114A, 116A, form heat insulation with gap 118,120 respectively.Heat insulation is about 1mm with interval (gap) H1 between the block on 118,120 parts of gap, and heat insulation is about 0.2mm with the interval H2 between the block on the part beyond the gap 118,120.
Inside at middle level block 82 and lower floor's block 84 is through with exhaust channel 121, and it is interconnected with gap 118 and 120 heat insulation, and has the outlet 122A in the lower aperture of lower floor's block 84.As shown in Figure 1, on the outlet 122A of exhaust channel 121, be connected with gap vacuum pumping system 124.Vacuum pumping system 124 is connected the exhaust channel 126 of outlet on the 122A, is successively set on turbomolecular pump (turbo-molecular pump) 128, pressure gauge 130, pressure-control valve 132 and the dry pump (dry pump) 134 on this exhaust channel 126 and constitutes by the one end.By vacuum pumping system 124 with heat insulation with the pressure that is evacuated to regulation in the clearance portion 118,120, thus, heat insulationly work as vacuum heat- insulating layer 86,88 with gap 118 and 120.In addition, because turbomolecular pump 128 is the pumps that are used for pumping high vacuum, when not requiring high vacuum, can omit turbomolecular pump 128.In addition, also can promote the exhaust velocity of 86,88 of vacuum heat-insulating layers by the quantity that increases exhaust channel 121.
Turn back to Fig. 3 once more, on dividing heat insulation part, be formed with ring shielding (shield) recess 138,140 that extends along the peripheral direction of container handling 34 with the interior all sides in two recesses 106,108 in gap 118,120.Be provided with have disc spring (coil spring) form and integral body shield member 142,144 in the form of a ring in recess 138,140 in shielding.Each shield member contacts with being somebody's turn to do block up and down to be clamped between its block up and down and under the state that is damaged by pressure by elasticity along the vertical direction, guarantees this electrically conducting between block up and down.Therefore, can not leak into the outside of container handling 34 from handling the space S side to reach the shielding of the microwave in the slit between block or high frequency waves conductively-closed parts 142,144.In addition, in the present embodiment, each block 80,82,84 is electrical grounding respectively.
And, on the inside of seal member 110A, the 114A of interior all sides, in the gap between the adjacency block, be provided with the plasma that prevents that forms by for example resin material along the peripheral direction of container handling 34 and invade, prevent owing to handle free radicals such as plasma (radical) the arrival seal member 110A in the space S, the seal member 110A that 114A produces, the damage of 114A with ring component 150,152.
In addition, in the middle level and the outside vacuum heat-insulating layer 94,96 that forms of the outer circumferential side of lower floor's block 82,84 constitute with gap (outer side clearance) 162,164 by the outside is heat insulation.The outside is heat insulation with gap 162,164, form between the outer peripheral face by hermetic being sealed in each block 82,84 respectively by seal members 154,156 and 158,160 such as O shape rings and each protective cover parts 98,100 closely spaced about both ends divide.The outside is heat insulation to be communicated with described exhaust channel 121 via communication paths 166,168 with gap 162,164.Therefore, by making vacuum pumping system 124 operations that are connected with exhaust channel 121, the outside is heat insulation also to be evacuated with gap 162,164, its result, and the outside is heat insulation works as outside vacuum heat-insulating layer 94,96 with gap 162,164.The heat insulation gap 118,120 of using is communicated with clearance portion 162,164 with the outside is heat insulation, heat insulationly be interconnected and make with gap 118 and 120, and the outside heat insulationly is interconnected with gap 162 and 164, gap 118 and 120 is connected with other vacuum pumping system with gap 162 and 164.Thus, for example, heat insulationly be atmospheric pressure state, just can be when keeping in repair the temperature of the container handling 34 of high temperatureization be reduced rapidly with spatial portion 118,120 by only making.
As shown in Figure 2, the protective cover parts 100 of lower floor's block 84, on position suitable on the container perimeter direction, be divided into a plurality of, for example four, make the installation of these protective cover parts 100 be easy to carry out.The protective cover parts 98 of middle level block 82 also preferably are carried out same cutting apart.
As shown in Figure 1, in upper strata block 80, be provided with and cold-producing medium can be flowed into its inner refrigerant passage 170, as the block cooling unit.Also can use cooler as the block cooling-part.In middle level block 82 and lower floor's block 84, be respectively arranged with block heater block 172,174.Be arranged on the block heater block 172 in the middle level block 82, can be the resistance heating encapsulation heater (sheath heater) that is embedded in the middle level block 82 and extends along the peripheral direction of container handling 34.The block heater block 174 that is arranged in lower floor's block 84 can be for being embedded in the bar-shaped a plurality of cartridge heaters (cartridge heater) in lower floor's block 84.The kind of these heaters is not limited to above-mentioned heater.
For with linking mutually between the block 80,82,84, can use metal screw bolt and nut.Fig. 5 is the schematic diagram of the binding between expression middle level block 82 and the lower floor's block 84.Metal bolt 180 is led in the inserting bolt holes, and it is tightened with nut 182.Between bolt 180 and nut 182 and its seat surface, there is ring washer 184, and has the annular baffle 185,186 of the low heat stable resin system of thermal conductivity respectively, suppress the heat conduction of 82,84 of two blocks by the heat-blocking action of dividing plate 185,186.The height of setting dividing plate 185 is about 20～30mm, has the heat-blocking action higher than another dividing plate 186.Binding between upper strata block 80 and the middle level block 82 also can take same method to implement.
Get back to Fig. 1 once more, on each block 80,82,84, be respectively arranged with for example thermocouple 188A, 188B, 188C, as temperature detection part.The output of each thermocouple 188A～188C is input to the temperature control unit 190 that is made of microcomputer etc.Temperature control unit 190 is controlled respectively above-mentioned block cooling-part 170 and block heater block 172,174 according to the output (being the actual temperature of each block) of thermocouple 188A, 188B, 188C and the target temperature of each block.
Below, the film build method according to plasma CVD that carries out at using plasma processing unit 32 describes.At first, target (setting) temperature at each block 80,82,84 that forms container handling 34 describes.Design temperature for the consumption that suppresses oxidation aluminum top board 56 with the upper strata block 80 of top support plate 56 is decided to be about 100 ℃.In order to prevent to produce the accumulation of unnecessary coherent film, the design temperature of middle level block 82 is decided to be about 200 ℃ at middle level block 82 inner surfaces.In order to prevent to produce the accumulation of unnecessary coherent film, the design temperature of lower floor's block 84 is fixed on 150 ℃～200 ℃ scopes, for example, fix on about 150 ℃ at the inner surface of lower floor's block 84.In addition, also substantially the temperature with lower floor block 84 is identical for the temperature of the diapire 90 of container handling 34.In addition, the reason that makes the control temperature of lower floor's block 84 be lower than middle level block 82 is, because lower floor's block 84 and diapire 90 thermo-contacts are set to not producing the minimum temperature that unnecessary coherent film is piled up.
When film forming, at first, via gate valve 46 (with reference to Fig. 2) semiconductor wafer W will be housed in the container handling 34 by carrying arm (not shown), by moving up and down lifter pin (liftpin) (not shown) wafer W be positioned on the mounting surface above the mounting table 36.Then, the resistance heater by mounting table 36 40 maintains processing temperature with wafer W.
In addition, will maintain the tonnage of regulation in the container handling 34, for example 0.01～number Pa scopes in, for example supply with CF system gas such as grade and carry out flow control from the spue shower nozzle 44 of portion 42 of gas.To be supplied to planar antenna member 62 via waveguide 72 and coaxial waveguide 68 by the microwave that microwave generator 76 takes place simultaneously, to import through stagnate ripple spare 64 and microwave after shortening wavelength and handle space S, thus, make and in handling space S, produce the plasma CVD that it is fixed that plasma is gone forward side by side professional etiquette and handle.At this moment, plasma zone 200 under top board 56 produces, and this plasma spreads downwards and makes the gas activate and produce spike, handles by the plasma CVD that the effect of this spike is stipulated the surface of wafer W.Its result forms for example fluorocarbon film in wafer surface.The processing temperature of this moment for example chip temperature is about 330 ℃.
When carrying out described processing, the gap be driven with vacuum pumping system 124 and each vacuum heat- insulating layer 86,88 and each outside vacuum heat-insulating layer 94,96 in be evacuated, simultaneously, by the control from temperature control unit 190, each block 80,82,84 is controlled to foregoing set point of temperature respectively.When handling, top board 56 is owing to the plasma resonance heat that zone under it 200 forms is exposed in the high temperature, but by the upper strata block 80 that supports this top board 56 cold-producing medium is flowed in the cooling channel 170, top board 56 and upper strata block 80 are maintained at about 100 ℃.Therefore, suppressed consumption, thereby can suppress to follow top board 56 to consume and the particulate of generation, and can prolong the life-span of top board 56 owing to the top board 56 of plasma.
In addition, middle level block 82 is heated and is maintained at about 200 ℃ by the block heater block 172 that is provided with wherein, in addition, lower floor's block 84 and the diapire 90 that contacts with its metallicity are heated by the block heater block 174 that is arranged in lower floor's block 84, are maintained at for example 150 ℃.By block 82,84 is kept higher relatively temperature, can prevent unwanted fluorocarbon film attached to its inner surface, in addition, can easily remove by dry etching even adhere to also.
In addition, in abutting connection with there not being the contact of direct metallicity between the block 80,82,84, and because in abutting connection with being provided with vacuum heat- insulating layer 86,88 between the block, so can suppress the heat conduction between each block significantly.Its result can distinguish and efficient temperature control each block.In addition, simple in structure because do not need inwall is set as prior art, do not need the size of expansion instrument yet.
In addition; owing on the periphery of the middle level of being kept the condition of high temperature and lower floor's block 82,84, be provided with protective cover parts 98,100 via outside vacuum heat-insulating layer 94,96 respectively; thereby can suppress significantly from the heat conduction of block 82,84 to protective cover parts 98,100; its result, can not make structure complicated and with the temperature maintenance of protective cover parts 98,100 in safe temperature.In addition, overflow to the outside owing to can suppress heat, thereby can improve the efficiency of heating surface.
In addition, prevent that plasma from invading the ring component 150,152 of usefulness, can prevent owing to invade the free radical such as plasma in gap of 80,82,84 of each blocks and damage that seal member 110A, 114A are caused from handling the space S side owing to be provided with.In addition, owing to be provided with seal member 142,144, can prevent because kelvin effect (skin effect) makes microwave (during high frequency waves too) invade the gap between each block 80,82,84 and leak into the outside of container handling 34 from processing space S one side.
In addition, when carrying out dry etching (removing), by flowing out oxidizing gas, for example O from shower nozzle 44 on one side attached to the unwanted film on the internal face of container handling 34
2Gas produces plasma on one side and carries out.At this moment, identical when handling with the plasma CVD that illustrates previously, make the gap with vacuum pumping system 124 and temperature control unit 190 operations, each block 80,82,84 is maintained the identical temperature of temperature when for example handling with plasma CVD respectively.
, inquire into, so followingly inquire into the result at it and describe at the optimum value of the interval H1 of each vacuum heat-insulating layer 86,88 and outside vacuum heat-insulating layer 94,96 herein.Fig. 6 is the pressure and the chart of interval H1 to the influence of heat flux generation in the expression vacuum heat-insulating layer.Make interval H1 in 1～100mm range herein.Shown in chart, if the pressure in the vacuum heat-insulating layer is set in 10
-3Below the Torr, then irrelevant with the size of interval H1, heat flux exists with ... pressure.Therefore find,,, preferably set more than 1mm, the pressure in the vacuum heat-insulating layer is set in 10 if H1 is set in about 1mm at interval from the angle of equipment miniaturization
-3Below the Torr, then can confirm to obtain high effect of heat insulation.In addition, when pressure 10
-2～10
-3In the Torr scope, be spaced apart under the situation of the situation of 1mm and 10mm, there do not have substantially between heat flux to be poor.Therefore find, pressure can be remained on 10 if use
-2Gap below Torr vacuum pumping system 124, then as long as H1 is set at about 1mm at interval, preferred settings gets final product more than 1mm.
Then, the heat output that will flow between two blocks compares at each position, below describes at comparative result with reference to table 1.In order to compare, write down the numerical value that adopts when not being the air heat-insulation layer of vacuum simultaneously herein.
[table 1]
| Vacuum heat-insulating layer | Air heat-insulation layer | |
| Qvac[W] | 0.1 | - |
| Qatm[W] | 48.1 | 437.4 |
| Qrad[W] | 6.1 | 6.1 |
| Qo-ring[W] | 63.2 | 63.2 |
| Qshield[W] | 31.4 | 31.4 |
| Total[W] | 149 | 538 |
In table 1, expression Qvac represents to represent to represent that via mobile heat output, the Qrad of the air layer in the gap (outer circumferential side of outer seal part) heat output, Qo-ring via radiation represents to invade via seal member, resinous distance member, the resinous plasma that prevents that mobile heat output, Qshield represents via the mobile heat output of metal shield member with annular element via heat output, Qatm that the vacuum heat-insulating layer of 1mTorr flows.
As can be found from Table 1, when heat insulation between block filled up (air heat-insulation layer) with the gap by atmosphere, there is the heat output of 538W (watt), relative therewith, heat output is reduced to 149W when adopting vacuum heat-insulating layer of the present invention, heat output can be reduced to below 30%.And in adopting the heat output of vacuum heat-insulating layer, the value of the heat output Qvac that flows via vacuum heat-insulating layer is compared minimum with the heat output of other parts, thereby also interval H1 can be set in below the 1mm.
In addition, find from table 1, minimum via the ratio that the heat output Qvac of vacuum heat-insulating layer conduction is shared with respect to total heat transfer, therefore, as the explanation that preceding reference chart shown in Figure 6 carries out, even the pressure in the vacuum heat-insulating layer is set at 10
-2Also can keep effect of heat insulation fully about Torr.Like this, be set at so not low pressure, just the pump that can not use high vacuum such as turbomolecular pump to use if will arrive pressure.
In addition; effect at outside vacuum heat-insulating layer 94,96 is discovered; make air enter this thermal insulation layer and when being atmospheric situation; the temperature of the face side of protective cover parts 98,100 is 78 ℃; relative therewith; when outside vacuum heat-insulating layer 94,96 was worked, the temperature of the face side of protective cover parts 98,100 was 40 ℃, and affirmation can descend 38 ℃.
First variation
In the aforesaid execution mode, middle level block 82 is made of single segment body (piece), but as shown in Figure 7, also can by mutual lamination a plurality of, for example three segment body 82A, 82B, 82C constitute middle level block 82.At this moment, in abutting connection with segment body (seal members 202 such as being provided with O shape ring that is situated between between the 82A～82C), with the clearance seal between segment body, and, make that (carrying out metallicity between the 82A～82C) contacts to keep the heat conductivity between the segment body well in abutting connection with segment body.At this moment, the shield member that prevents leakage usefulness such as microwave also can be set between the adjacency segment body.Like this, by constituting middle level block 82, can make each segment body hold special function respectively with a plurality of segment bodies.For example, can on the block 82A of upper strata, be provided with along inner circumferential surface and form a plurality of gas ejection ports and supply with compression ring (gas ring) structure (with reference to Fig. 8) of purgative gas.
Second variation
In Fig. 1 that has illustrated and processing unit shown in Figure 7, for example when keeping in repair in this container handling 34, top board 56 and the upper strata block 80 that is arranged on container handling 34 ceiling portions are removed together with container handling 34 openings, and afterwards, the operator carries out the maintenance activity in the container handling 34.
But, at this moment,, in addition, have to sometimes shower nozzle 44 is removed because shower nozzle 44 is fixed on and makes maintenance activity be very difficult to carry out on the middle level block 82, make maintenance operation bother very much.In addition, when aggregate erection upper strata block 80 once more, must carry out the heat insulation troublesome operation of adjusting with the width in gap between itself and the middle level block 82.
Herein, in this second variation, the part of fixing shower nozzle 44 can be separated from the part of shower nozzle 44 downsides together with upper strata block 80, so that can promptly carry out maintenance activity.
Below, at second variation, be elaborated with reference to Fig. 8 to Figure 10.In addition, in Fig. 8 to Figure 10, pay identical numbering and omit explanation it for the component part identical with the component part shown in Fig. 1 and Fig. 7.As the explanation that reference Fig. 7 has carried out, middle level block 82 is divided into a plurality of, is segment body 82A, 82B, the 82C of three ring-types herein.Upper strata segment body 82A is provided with a plurality of gas jetting holes 204 along inner circumferential surface, forms the structure of compression ring.Can as required purge gas be supplied in the container handling 34 from gas jetting hole 204.
Middle level segment body 82B supports shower nozzle 44.Each segment body 82A, 82B, 82C with when the maintenance etc. as required the form that can separate of the middle level segment body 82B of lower floor's segment body 82C above with it carry out aggregate erection.Upper strata block 80 and upper strata and middle level segment body 82A and 82B are combined into one by not shown bolt.As mentioned above, the state that separates from the segment body 82C of lower floor of Fig. 9 integral body that to be expression be made of upper strata block 80 and upper strata and middle level segment body 82A and 82B.
Corresponding to described structure, outside vacuum heat-insulating layer 94 and protective cover 98 are divided into outside vacuum heat-insulating layer 94X, 94Y and protective cover 98X, 98Y up and down, the form that formation can be corresponding with described lock out operation respectively.Same in addition, corresponding to the outside vacuum heat-insulating layer 94X, the 94Y that are separated into two, form the communication paths 166X, the 166Y that are communicated with the exhaust channel 121 of vacuum pumping system 124 with the gap respectively.
In addition, as shown in figure 10, the sidepiece of container handling 34 is provided with upper strata block 80 is carried out the development mechanism 210 that switch is used.This development mechanism 210 has the rotating shaft 212 that is rotated by actuators such as cylinders.Arm 214 is extended from this rotating shaft 212, the front end and the upper strata block 80 of this arm 214 is connected and fixed.Therefore, by making development mechanism 210 operations, the one thing after upper strata block 80 and upper strata and middle level segment body 82A, 82B are integrated is the pivot rotary expansion with rotating shaft 212 as shown in figure 10.
Thus, the ceiling side of container handling 34 is by opening, and the operator is not subjected to the interference of shower nozzle 44 can be rapidly and carry out maintenance operation easily.In addition, when aggregate erection is carried out in the reverse rotation of above-mentioned one thing,, do not need carrying out delicate adjustment etc. between the two as long as the middle level segment body 82B that separates and lower floor's segment body 82C sealing can be engaged well just passablely, thus easy to operate.
Because above-mentioned expansion operation can be carried out under the state that keeps upper strata block 80 and upper strata and middle level segment body 82A, 82B to be combined as a whole, thereby does not need to adjust once more with gap 118 heat insulation.Thus, can carry out maintenance activity rapidly., middle level block 82 has been divided into three herein, has been not limited thereto but cut apart number.Also segment body 82A, the 82B in upper strata and middle level can be combined into a whole segment body.At this moment, middle level block 82 is divided into two segment bodies.
In addition, development mechanism 210 is also applicable in the execution mode of Fig. 1 and Fig. 7, still, in the situation of Fig. 1, comprises that the upper strata block 80 of top board 56 is unfolded.
The present invention is not limited to described execution mode and variation.For example, the design temperature of described each block 80,82,84 only is one gives an example, not limited thereto.
In addition, according to the design temperature of block 80, also the block heater block can be set on block 80.In addition, the number (quantity of block) of cutting apart of container handling 34 also is not limited to three.
The processing that plasma processing apparatus carries out, the film forming that is not limited to the fluorocarbon film that is undertaken by plasma CVD is handled, and for example also can be SiO
2Other plasma treatment such as the accumulation of other films such as film, plasma etch process or plasma ashing processing.
In said embodiment, adopted microwave in order to produce plasma, but be not limited thereto, for example also can adopt the high frequency waves of 13.54MHz etc., the magnetron vibration that also can adopt magnetic field and DC electric field by magnetron to produce.That is, plasma forms the unit and can be used as the parts of the electric field that forms suitable intensity in container handling, magnetic field, electromagnetic field and constitute.
In said embodiment, employing forms plasma in container handling 34 plasma forms the unit, but be not limited thereto, also can adopt similar so-called remote plasma generator like this, generate plasma in the outside of container handling 34 and the plasma in this plasma importing container handling 34 is imported the unit.
The present invention also can be applicable to the processing unit that does not adopt the plasma that produces by microwave or high frequency waves, for example carries out in the situation of hot CVD processing, modification processing and oxide-diffused processing etc.At this moment, do not need to prevent the annular element 150,152 and the shield member 142,144 of plasma intrusion usefulness certainly.
In addition, handled object is not limited to semiconductor wafer, also can be LCD substrate, glass substrate, ceramic substrate etc.
Claims (17)
1. a processing unit carries out predetermined processing to handled object, it is characterized in that, comprising:
But the metallic container handling of exhaust;
For the mounting handled object is arranged on mounting table in the described container handling;
Be used for heater block that described handled object is heated; And
Import gas introduction unit in the described container handling with handling gas, wherein,
Described container handling is made of a plurality of blocks of mutual binding, is provided with vacuum heat-insulating layer between block between the adjacency block,
Describedly be configured in the mode that adjoins each other at above-below direction in abutting connection with block,
Described each block is provided with block heater block that this block is heated or the block cooling-part that cools off,
Described each block is provided with the temperature detection part that the temperature of this block is detected usefulness,
The described block heater block or the described block cooling-part that are arranged on described each block are connected with temperature control unit, described temperature control unit is according to the temperature of detected each block of this temperature detection part, so that the temperature of each block becomes the mode of desired value and the described block heater block or the described block cooling-part that are arranged on described each block are controlled.
2. processing unit as claimed in claim 1 is characterized in that:
Vacuum heat-insulating layer forms by the seal member that is arranged between block between the described block all sides within the gap and outer circumferential side in the block of described above-below direction adjacency and sealing airtightly between described block,
Described processing unit also comprises the vacuum pumping system that vacuumizes and make it to work as vacuum heat-insulating layer between described block in gap between described block.
3. processing unit as claimed in claim 2 is characterized in that:
Described in abutting connection with block not directly contact mutually.
4. processing unit as claimed in claim 3 is characterized in that:
Be used for being set at described in abutting connection with the distance member that forms the nonmetal system in gap between described block between block in abutting connection with between the block described.
5. processing unit as claimed in claim 1 is characterized in that:
The protected cap assembly of the outer peripheral face of at least one block covers in described a plurality of block, is provided with outside vacuum heat-insulating layer between described outer peripheral face and protective cover parts.
6. processing unit as claimed in claim 5 is characterized in that:
Described outside vacuum heat-insulating layer is by described block and described protective cover parts and seal the seal member formation that is arranged on outer side clearance end therebetween airtightly,
This processing unit also comprises the vacuum pumping system that vacuumizes and make it to work as described outside vacuum heat-insulating layer described outer side clearance.
7. processing unit as claimed in claim 6 is characterized in that:
Gap and described outer side clearance are communicated with by communication paths between described block, vacuumize by common vacuum pumping system.
8. processing unit as claimed in claim 1 is characterized in that:
In described a plurality of block at least one is provided with the block heater block.
9. processing unit as claimed in claim 1 is characterized in that:
In described a plurality of block at least one is provided with the block cooling-part.
10. processing unit as claimed in claim 1 is characterized in that:
Described each block is controlled at different temperature respectively.
11. processing unit as claimed in claim 2 is characterized in that:
Comprise that also the plasma that forms electric field, magnetic field or electromagnetic field in order to produce plasma in described container handling in described container handling forms the unit; Or the plasma that the plasma that will generate outside described container handling is supplied in the described container handling imports the unit,
Between described block in the gap, on the interior all side more inner, be provided with the plasma that is used to prevent in the container handling and invade preventing that plasma from invading and using ring component of gap between described block than the seal member of all sides in described.
12. processing unit as claimed in claim 11 is characterized in that:
Described processing unit has described plasma and forms the unit,
Described plasma forms the unit by microwave or high frequency waves being supplied to the parts in the described container handling and constituting,
Between described block, be provided with in the gap make described in abutting connection with electrically conducting between block and prevent microwave or high frequency waves leak to the shield member of described container handling outside.
13. processing unit as claimed in claim 11 is characterized in that:
Described processing unit has described plasma and forms the unit,
Described plasma forms the unit and is made of the parts that microwave is supplied in the described container handling,
Ceiling portion at described container handling is provided with the top board that makes microwave penetrating,
On described top board, be provided with and be used for microwave is imported planar antenna member in the described container handling.
14. processing unit as claimed in claim 13 is characterized in that:
Described a plurality of block comprises:
Support the upper strata block of described top board;
As a described gas introduction unit part, supporting will handle gas and be expelled to the spue middle level block of portion of gas in the described container handling; And
Lower floor's block corresponding to described mounting table present position.
15. processing unit as claimed in claim 14 is characterized in that:
Described middle level block is made of a plurality of segment bodies in the above-below direction lamination,
A segment body in described a plurality of segment body beyond the orlop segment body supports the described gas portion that spues.
16. processing unit as claimed in claim 15 is characterized in that:
Described a plurality of segment body carries out lamination in the mode that the segment body in the above-below direction adjacency directly contacts,
The spue segment body of portion of described upper strata block and the described gas of supporting is combined into one,
Support described gas spue portion segment body can be positioned at its below segment body separate,
Be provided with described upper strata block and the described gas of supporting are spued development mechanism that the segment body one of portion launches.
17. processing unit as claimed in claim 15 is characterized in that:
Described middle level block has three segment bodies,
Upper strata segment body in described three segment bodies is provided with the compression ring structure of supplying with purgative gas,
The described gas portion of spuing is supported on the middle level segment body in described three segment bodies,
Described upper strata block and described upper strata segment body and described middle level segment body are combined as a whole,
Lower floor's segment body in described three segment bodies can separate from described middle level segment body,
Be provided with the development mechanism that described upper strata block and described upper strata segment body and described middle level segment body one are launched, by making the action of this development mechanism, constituting can be from described lower floor segment body separated structures form by incorporate described upper strata block and described upper strata segment body and described middle level segment body.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005302592 | 2005-10-18 | ||
| JP302592/2005 | 2005-10-18 | ||
| JP171484/2006 | 2006-06-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101061572A CN101061572A (en) | 2007-10-24 |
| CN100477091C true CN100477091C (en) | 2009-04-08 |
Family
ID=38866688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006800011989A Expired - Fee Related CN100477091C (en) | 2005-10-18 | 2006-10-18 | Processor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100477091C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5582819B2 (en) * | 2010-02-24 | 2014-09-03 | 東京エレクトロン株式会社 | Processing equipment |
| CN104299874B (en) * | 2013-07-17 | 2017-10-20 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus |
| CN103397309A (en) * | 2013-08-02 | 2013-11-20 | 光垒光电科技（上海）有限公司 | Air-inlet device and reaction chamber |
| CN109727838B (en) * | 2017-10-31 | 2021-09-17 | 北京北方华创微电子装备有限公司 | Plasma generating cavity and semiconductor processing equipment |
| CN116121708B (en) * | 2023-01-04 | 2023-09-08 | 上海欧展电器有限公司 | Heating device for be used for vacuum coating machine |
-
2006
- 2006-10-18 CN CNB2006800011989A patent/CN100477091C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101061572A (en) | 2007-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100920280B1 (en) | Processing apparatus | |
| US11130142B2 (en) | Showerhead having a detachable gas distribution plate | |
| US10790120B2 (en) | Showerhead having a detachable high resistivity gas distribution plate | |
| TWI654712B (en) | Method and apparatus for substrate support with multi-zone heating | |
| US9853579B2 (en) | Rotatable heated electrostatic chuck | |
| CN103890917B (en) | Thermal management of edge ring in semiconductor processing | |
| WO2015103521A1 (en) | High efficiency inductively coupled plasma source with customized rf shield for plasma profile control | |
| KR20130023193A (en) | Apparatus for radial delivery of gas to a chamber and methods of use thereof | |
| CN100477091C (en) | Processor | |
| US20180197721A1 (en) | Method and apparatus for processing a substrate | |
| JP3646793B2 (en) | Plasma processing equipment | |
| US10037883B2 (en) | Enhanced productivity for an etch system through polymer management | |
| KR20110081313A (en) | Extended chamber liner for improved mean time between cleanings of process chambers | |
| CN114360994A (en) | Substrate processing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090408 Termination date: 20141018 |
|
| EXPY | Termination of patent right or utility model |