TWI529443B - Exposure device and micro lens array structure - Google Patents

Exposure device and micro lens array structure Download PDF

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TWI529443B
TWI529443B TW101105667A TW101105667A TWI529443B TW I529443 B TWI529443 B TW I529443B TW 101105667 A TW101105667 A TW 101105667A TW 101105667 A TW101105667 A TW 101105667A TW I529443 B TWI529443 B TW I529443B
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substrate
exposure
microlens array
light
microlens
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TW101105667A
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TW201243420A (en
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水村通伸
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V科技股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0056Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)

Description

曝光裝置及微透鏡陣列構造體 Exposure device and microlens array structure

本發明係關於曝光玻璃基板等之曝光裝置,該玻璃基板等係使用於行動電話用之液晶顯示面板等;尤其,本發明係關於,在遮罩與曝光對象的基板間配置複數微透鏡,並能夠以高解像力曝光遮罩圖案之曝光裝置及微透鏡陣列構造體。 The present invention relates to an exposure apparatus for exposing a glass substrate or the like, which is used for a liquid crystal display panel for a mobile phone, etc. In particular, the present invention relates to a plurality of microlenses disposed between a mask and a substrate to be exposed, and An exposure apparatus and a microlens array structure capable of exposing a mask pattern with high resolution.

以往,在曝光使用於大型液晶顯示面板等之例如玻璃基板等時,會使用透鏡掃描式,鏡投射式及近接式等曝光裝置。然後,使形成於大型遮罩上之圖案的透射光,入射到複數的投影光學系統(多透鏡)而於基板上分割而成像,並藉由一次的曝光,進行基板上複數的區域之曝光。這種曝光方法,採用於需要3μm以上的解像力之基板的曝光。 Conventionally, when exposure is applied to, for example, a glass substrate or the like of a large liquid crystal display panel, an exposure apparatus such as a lens scanning type, a mirror projection type, or a proximity type is used. Then, the transmitted light of the pattern formed on the large mask is incident on a plurality of projection optical systems (multiple lenses), and is divided and formed on the substrate, and exposure of a plurality of regions on the substrate is performed by one exposure. This exposure method is employed for exposure of a substrate requiring a resolution of 3 μm or more.

但是,例如使用於行動電話用之液晶顯示面板等的玻璃基板等,於使用之基板為小的場合,由於需要2μm以下之高解像力,無法採用如上述之使用多透鏡的曝光方法。從而,使用用於半導體用基板等的曝光之步進式曝光裝置(例如,專利文獻1及2)。 However, for example, in a glass substrate or the like used for a liquid crystal display panel for a mobile phone, when a substrate to be used is small, a high resolution of 2 μm or less is required, and the above-described exposure method using a multi-lens cannot be employed. Therefore, a step exposure apparatus for exposure of a substrate for a semiconductor or the like is used (for example, Patent Documents 1 and 2).

於步進式曝光裝置中,形成於遮罩之各圖案的透射光,於透射縮小光學系統後,照射於基板。以往,使用於行動電話用之液晶顯示面板等的玻璃基板,係由例如1.5m2之大型基板製造,在曝光時,於構成各個一或複數片個別的玻璃基板之區域進行複數次的曝光。然後,將藉由複數次的曝光而曝光了所有構成個別基板之區域的基板分割,而製造複數片玻璃基板。 In the stepper exposure apparatus, the transmitted light formed in each pattern of the mask is irradiated onto the substrate after being transmitted through the reduction optical system. Conventionally, a glass substrate used for a liquid crystal display panel or the like for mobile phones is manufactured by, for example, a large substrate of 1.5 m 2 , and is exposed at a plurality of times in a region constituting each of the individual glass sheets of one or a plurality of sheets during exposure. Then, the substrate is divided by exposing all the regions constituting the individual substrates by a plurality of exposures to fabricate a plurality of glass substrates.

又,於專利文獻3中亦揭示,於遮罩與基板之間配置微透鏡 陣列,並藉由微透鏡陣列提高形成之圖案的解像力之技術。即,如專利文獻3所記載,將形成要曝光之圖案的遮罩,依對應各個個別基板(面板)之大小而設置,並藉由以微透鏡的各微透鏡,使要曝光之圖案於基板上以正立等倍像成像,可以提高形成之曝光圖案的解像力。 Further, Patent Document 3 also discloses that a microlens is disposed between the mask and the substrate. The array, and the technique of increasing the resolution of the formed pattern by the microlens array. That is, as described in Patent Document 3, the mask forming the pattern to be exposed is provided corresponding to the size of each individual substrate (panel), and the pattern to be exposed is applied to the substrate by the respective microlenses of the microlens. The imaging of the erecting equal-magnification image can improve the resolution of the formed exposure pattern.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

專利文獻1日本特開2006-235515號公報 Patent Document 1 Japanese Patent Laid-Open Publication No. 2006-235515

專利文獻2國際公開第2005/038518號 Patent Document 2 International Publication No. 2005/038518

專利文獻3日本特開2008-197226號公報 Patent Document 3 Japanese Patent Laid-Open Publication No. 2008-197226

但是,於上述先前技術中,存在如以下之問題點。於專利文獻1及2所揭示之步進式曝光裝置中,有必要於構成各個一或複數片之個別的玻璃基板之區域重覆進行複數次曝光,存在曝光時程變長之問題點。 However, in the above prior art, there are problems as follows. In the step-and-exposure apparatus disclosed in Patent Documents 1 and 2, it is necessary to repeat the plurality of exposures in the region of the individual glass substrates constituting each of the one or more sheets, and there is a problem that the exposure time period becomes long.

又,如專利文獻3所記載,即使在藉由微透鏡陣列得到高解像力時,與步進式曝光裝置之場合相同,於各個別基板,逐一複數次反覆進行藉由以各自對應之大小設置的遮罩及微透鏡陣列之曝光,並將基板上之正型光阻材料於構成各個個別基板之區域逐一進行曝光。從而,存在曝光時程極為冗長之問題點。 Further, as described in Patent Document 3, even when a high resolution is obtained by the microlens array, as in the case of the stepper exposure apparatus, the respective substrates are repeatedly arranged one by one by the respective sizes. The mask and the microlens array are exposed, and the positive photoresist material on the substrate is exposed one by one in the area constituting each individual substrate. Therefore, there is a problem that the exposure time is extremely lengthy.

為解決此問題點,考量使用對應於複數片之個別基板而複數設置要曝光之圖案之遮罩。但是,成像遮罩圖案之微透鏡陣列,與遮罩之場合相異,難以使其對應於複數片之個別基板而大型化。因此,有必要使用接續複數個配合了各個別基板(面板)的寬 度之微透鏡陣列薄片的微透鏡陣列。此時,各微透鏡陣列薄片間之區域,係構成藉由支持部支持之遮光區域。從而,對應此遮光區域之個別基板(面板)間的區域不被曝光,而於後續之蝕刻步驟中,於個別基板間之區域電極材料會殘存,因此,存在各個別基板之邊緣部的回路短路的問題點。 In order to solve this problem, it is considered to use a mask corresponding to a plurality of substrates of a plurality of sheets to set a pattern to be exposed in plural. However, the microlens array for imaging the mask pattern is different from the case of the mask, and it is difficult to increase the size of the individual substrates corresponding to the plurality of sheets. Therefore, it is necessary to use a plurality of connections to match the width of each substrate (panel). Microlens array of microlens array sheets. At this time, the region between the microlens array sheets constitutes a light-shielding region supported by the support portion. Therefore, the area between the individual substrates (panels) corresponding to the light-shielding region is not exposed, and in the subsequent etching step, the electrode material remains in the region between the individual substrates, and therefore, there is a short circuit of the edge portions of the respective substrates. The problem point.

本發明係有鑑於相關問題點,其目的為,在可以跨越複數片構成個別基板之區域曝光形成有正型光阻材料之基板的曝光裝置中,提供可以曝光構成個別基板之區域間的正型光阻材料之曝光裝置及曝光裝置用微透鏡陣列構造體。 The present invention has been made in view of the related problems, and an object thereof is to provide a positive type in which an area in which an individual substrate can be exposed can be exposed in an exposure apparatus which can expose a substrate on which a positive resist material is formed across a plurality of areas constituting individual substrates. An exposure apparatus for a photoresist material and a microlens array structure for an exposure apparatus.

關於本發明之曝光裝置,其包含:其以曝光光線於第1方向上掃描表面形成有正型光阻材料之基板,而形成曝光圖案,光源,用以射出曝光光線;遮罩,在垂直於該第1方向之第2方向上隔著預定之間隔設置要曝光之複數個圖案,來自於該光源之曝光光線透射該圖案;微透鏡陣列,配置有使該圖案之正立等倍像成像於該基板上之複數個微透鏡;框狀的支持部,用以支持該微透鏡陣列;以及驅動部,使該微透鏡陣列及該光源在該第1方向上對於該遮罩相對地移動;該微透鏡陣列,係由微透鏡薄片於該第2方向上接續而構成,該微透鏡薄片設置有複數個微透鏡;於該支持部,在對準該微透鏡陣列之該微透鏡薄片間的位置處,設有曝光光線透射用的開口。 The exposure apparatus of the present invention comprises: a substrate on which a positive photoresist material is formed by scanning light in a first direction to form an exposure pattern, and a light source for emitting exposure light; the mask is perpendicular to a plurality of patterns to be exposed are disposed in a predetermined direction at a predetermined interval in the second direction of the first direction, and exposure light from the light source is transmitted through the pattern; and the microlens array is configured to image an erecting image of the pattern a plurality of microlenses on the substrate; a frame-shaped support portion for supporting the microlens array; and a driving portion for moving the microlens array and the light source relative to the mask in the first direction; a microlens array, wherein the microlens sheet is continuous in the second direction, the microlens sheet is provided with a plurality of microlenses; and the support portion is positioned between the microlens sheets of the microlens array An opening for transmitting light for exposure is provided.

關於本發明之曝光裝置用微透鏡陣列構造體,包含:光源,用以射出曝光光線;遮罩,在垂直於基板掃描方向的第1方向之第2方向隔著預定之間隔設置要曝光之複數個圖案,來自於該光源之曝光光線透射該圖案;微透鏡陣列,配置有使該圖案之正立等倍像成像於該基板上之複數個微透鏡;框狀的支持部,用以支持該微透鏡陣列;以及驅動部,其使該微透鏡陣列及該光源於該 第1方向上對於該遮罩相對地移動;且,一微透鏡陣列構造體使用於一曝光裝置,該曝光裝置以曝光光線於該第1方向上掃描表面形成了正型光阻材料之基板而形成曝光圖案,於該微透鏡陣列構造體中,該微透鏡陣列,係於該第2方向上接續設置有複數個微透鏡之微透鏡薄片而構成,在該支持部,在對準該微透鏡陣列的該微透鏡薄片間之位置處,設置有曝光光線透射用的開口。 A microlens array structure for an exposure apparatus according to the present invention includes: a light source for emitting an exposure light; and a mask for setting a plurality of exposures at a predetermined interval in a second direction perpendicular to a first direction of the substrate scanning direction. a pattern, the exposure light from the light source is transmitted through the pattern; the microlens array is provided with a plurality of microlenses for imaging an erecting image of the pattern on the substrate; a frame-shaped support portion for supporting the a microlens array; and a driving portion that causes the microlens array and the light source to Moving in the first direction relative to the mask; and a microlens array structure is used in an exposure device for forming a substrate of a positive photoresist material by exposing light to the surface in the first direction. Forming an exposure pattern, wherein in the microlens array structure, the microlens array is formed by arranging a plurality of microlens microlens sheets in the second direction, and the microlens is aligned in the support portion At the position between the microlens sheets of the array, an opening for transmitting the exposure light is provided.

於本發明中,例如該支持部的開口,係設置於該基板之掃描方向的前方及後方雙方的端部,或是,設置於該基板之掃描方向的前方及後方中之一方的端部。又,於該支持部,進而,在對準該微透鏡陣列之兩端部的微透鏡薄片各自之外側的邊緣部之位置亦以設置有曝光光線透射用的開口為佳。 In the present invention, for example, the opening of the support portion is provided at both ends of the front side and the rear side in the scanning direction of the substrate, or at one end of the front side and the rear side of the scanning direction of the substrate. Further, in the support portion, it is preferable to provide an opening for transmitting the exposure light at a position on the outer edge portion of each of the lenticular sheets which are aligned at both end portions of the microlens array.

上述曝光裝置中,例如,更具有一控制裝置,用以在停止了來自該光源之曝光光線的射出之狀態,控制在該第2方向中之該基板的位置,在位於該基板之該第2方向的要曝光之區域的數量比位於該遮罩之該第2方向的圖案數量多的場合,該控制裝置,可以在將對應該基板之該圖案數的區域曝光後,停止射出曝光光線,並使該基板於該第2方向上移動,而再次開始射出曝光光線,俾令該圖案之正立等倍像成像於該基板之未曝光的區域。 In the above exposure apparatus, for example, there is further provided a control means for controlling the position of the substrate in the second direction in a state in which the emission of the exposure light from the light source is stopped, and the second portion located on the substrate When the number of regions to be exposed in the direction is larger than the number of patterns in the second direction of the mask, the control device may stop emitting the exposure light after exposing the region corresponding to the number of patterns of the substrate. The substrate is moved in the second direction, and the exposure light is again emitted, and the erected equal-magnification image of the pattern is imaged on the unexposed region of the substrate.

又,例如,該控制裝置在停止了來自該光源之曝光光線的射出之狀態下,也可以控制位於該第1方向之該基板的位置,在位於該基板之該第1方向的要曝光之區域的數量比位於該遮罩之該第1方向的圖案數量多的場合,亦可以在將對應該基板之該圖案數的區域曝光後,停止射出曝光光線,並使該基板於該第1方向上移動,而再次開始射出曝光光線,俾令該圖案之正立等倍像成像於該基板之未曝光的區域。 Further, for example, the control device may control the position of the substrate located in the first direction while the emission of the exposure light from the light source is stopped, and the area to be exposed in the first direction of the substrate When the number of patterns is larger than the number of patterns in the first direction of the mask, the exposure light may be stopped after the area corresponding to the number of patterns of the substrate is exposed, and the substrate is placed in the first direction. Moving, and again starting to emit the exposure light, the erected equal-magnification image of the pattern is imaged in the unexposed area of the substrate.

本發明之曝光裝置中,在遮罩上,要曝光之複數個圖案係於第1方向上隔著預定之間隔設置,來自光源的曝光光線係透射於並列在第1方向上之複數個圖案。然後,使圖案之正立等倍像成像於基板上之微透鏡陣列,係藉由框狀的支持部加以支持,並藉由驅動部,使微透鏡陣列及光源對於遮罩相對的在第1方向上移動。本發明中,微透鏡陣列,係於第2方向上接續設置有複數個微透鏡之微透鏡薄片而構成,但是,於支持微透鏡陣列之支持部,在對準於微透鏡薄片間之位置處,設置有曝光光線透射用的開口。從而,在使來自光源之曝光光線射出之狀態下,藉由驅動部,若使微透鏡陣列及光源對於遮罩相對的在第1方向上移動,則在基板上之圖案間的區域,照射透射支持部的開口之曝光光線,可以確實的曝光構成個別基板之區域間的正型光阻材料。 In the exposure apparatus of the present invention, the plurality of patterns to be exposed on the mask are provided at a predetermined interval in the first direction, and the exposure light from the light source is transmitted through the plurality of patterns juxtaposed in the first direction. Then, the microlens array for imaging the erected image of the pattern on the substrate is supported by the frame-shaped support portion, and the microlens array and the light source are opposite to the mask by the driving portion. Move in the direction. In the present invention, the microlens array is configured by arranging a plurality of microlens microlens sheets in the second direction, but at a position supporting the microlens array, at a position aligned between the microlens sheets An opening for transmitting the exposure light is provided. Therefore, in a state where the exposure light from the light source is emitted, when the microlens array and the light source are moved in the first direction with respect to the mask by the driving portion, the region between the patterns on the substrate is irradiated and transmitted. The exposure light of the opening of the support portion can positively expose the positive photoresist material between the regions constituting the individual substrates.

以下,參照隨付之圖式就本發明之實施形態具體的說明。圖1表示,藉由關於本發明之實施形態的曝光裝置之曝光的示意圖,圖2(a)表示,關於本發明之實施形態的曝光裝置中,微透鏡陣列及支持部之平面圖,圖2(b)表示,關於本發明之實施形態的曝光裝置中,微透鏡陣列及支持部之局部擴大立體圖。又,圖3(a)表示,關於本發明之第1實施形態的曝光裝置中,在微透鏡陣列中之曝光光線的透射區域之圖式,圖3(b)表示,形成於基板上之曝光區域的平面圖。關於本實施形態之曝光裝置1,係於第1方向上掃描於表面形成有正型光阻材料之基板2而形成曝光圖案,並係藉由以下構件而構成:光源11,用以射出曝光光線;遮罩12,形成了預定的複數個曝光圖案;微透鏡陣列13,配置了複數個微透鏡131a,該微透鏡131a係用以入射遮罩12之透射光,而使各圖案之正立等倍像成像於基板上;以及支持部130,用以支持微透鏡陣列13。 Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings. 1 is a schematic view showing exposure of an exposure apparatus according to an embodiment of the present invention, and FIG. 2(a) is a plan view showing a microlens array and a support portion in an exposure apparatus according to an embodiment of the present invention, FIG. 2 (FIG. 2 (FIG. 2) b) shows a partially enlarged perspective view of the microlens array and the support portion in the exposure apparatus according to the embodiment of the present invention. 3(a) is a view showing a transmission region of exposure light in a microlens array in the exposure apparatus according to the first embodiment of the present invention, and FIG. 3(b) shows an exposure formed on the substrate. Floor plan of the area. In the exposure apparatus 1 of the present embodiment, the substrate 2 having the positive photoresist material formed on the surface thereof is scanned in the first direction to form an exposure pattern, and is formed by a light source 11 for emitting exposure light. The mask 12 forms a predetermined plurality of exposure patterns; the microlens array 13 is provided with a plurality of microlenses 131a for incident light incident on the mask 12, so that the patterns are erected, etc. The multiple image is imaged on the substrate; and the support portion 130 is for supporting the microlens array 13.

藉由本實施形態之曝光裝置1曝光的基板,為例如1500mm×1850mm之大型玻璃基板,複數片個別基板係由該大型玻璃基板切割出來而製造。即,如圖1所示之玻璃基板2,在被曝光為各個別基板之預定的圖案形狀後,經由顯像步驟及蝕刻步驟,而於表面形成透明電極,並於後續的步驟中,被分割而構成各個別基板。從而,在本實施形態中之玻璃基板2的表面,於構成個別基板之區域的全部領域,形成有例如ITO(Indium-Tin-Oxido)等之透明電極材料,並於該透明電極材料之上,形成有光阻層。於本發明中,以對應於遮罩12的圖案之形狀將曝光光線照射於光阻層,並藉由曝光光線使照射了曝光光線之區域的光阻層感光,其後,藉由施行顯像及蝕刻來除去之。從而,本發明中之光阻層,係藉由正型光阻材料而形成,該正型光阻材料,係組合了由光分解產生酸之化合物,以及由產生了的酸分解而提高於顯像液中之光阻層的溶解性之黏著劑樹脂。 The substrate exposed by the exposure apparatus 1 of the present embodiment is, for example, a large glass substrate of 1500 mm × 1850 mm, and a plurality of individual substrates are produced by cutting out the large glass substrate. That is, the glass substrate 2 shown in FIG. 1 is formed into a transparent pattern on the surface through a development step and an etching step after being exposed to a predetermined pattern shape of each substrate, and is divided in the subsequent steps. And each of the substrates is formed. Therefore, on the surface of the glass substrate 2 in the present embodiment, a transparent electrode material such as ITO (Indium-Tin-Oxido) or the like is formed on the entire surface of the region constituting the individual substrate, and the transparent electrode material is formed on the transparent electrode material. A photoresist layer is formed. In the present invention, the exposure light is irradiated onto the photoresist layer in a shape corresponding to the pattern of the mask 12, and the photoresist layer irradiated with the exposure light is exposed by the exposure light, and thereafter, by performing imaging. And etching to remove it. Therefore, the photoresist layer in the present invention is formed by a positive-type photoresist material which combines a compound which generates an acid by photolysis, and which is improved by the decomposition of the generated acid. An adhesive resin such as the solubility of a photoresist layer in a liquid.

於本實施形態中之光源11,為射出例如由紫外光所組成之雷射光的光源,在曝光時,可以連續的射出雷射光。光源11,係藉由未圖示之驅動部,與後述之微透鏡陣列一同於第1方向上移動,藉此,以使相對於遮罩12之曝光光線的照射位置於第1方向上移動。 The light source 11 in the present embodiment is a light source that emits, for example, laser light composed of ultraviolet light, and can continuously emit laser light during exposure. The light source 11 is moved in the first direction together with a microlens array to be described later by a driving unit (not shown), whereby the irradiation position of the exposure light with respect to the mask 12 is moved in the first direction.

遮罩12,其形成對應於在個別基板形成之透明電極的形狀之圖案12a。於本實施形態中,如圖1所示,遮罩12,係以對應於玻璃基板2之大小而設置。然後,於遮罩12,配合由玻璃基板2製造之個別基板的片數,而對應於各個別基板用的回路圖案之形狀的圖案12a,係在與婦描方向之第1方向垂直的第2方向隔著預定間隔排列而設置,又,於掃描方向之第1方向上隔著預定間隔而複數行設置。 A mask 12 is formed to form a pattern 12a corresponding to the shape of the transparent electrode formed on the individual substrate. In the present embodiment, as shown in FIG. 1, the mask 12 is provided corresponding to the size of the glass substrate 2. Then, in the mask 12, the number of individual substrates produced by the glass substrate 2 is matched, and the pattern 12a corresponding to the shape of the circuit pattern for each substrate is the second perpendicular to the first direction of the woman drawing direction. The directions are arranged at predetermined intervals, and are arranged in a plurality of rows at predetermined intervals in the first direction of the scanning direction.

如圖2所示,微透鏡陣列13設定了複數個微透鏡131a,於本 實施形態中,5片微透鏡薄片131係於第2方向上接續而構成。然後,各微透鏡薄片131係藉由托架133等來接續於框狀的支持部130,而支持於支持部130。微透鏡薄片131之各微透鏡131a,係每4個配列於曝光光線之光路上,並藉由入射透射過遮罩12之曝光光線,使圖案12a的正立等倍像成像於基板2上。 As shown in FIG. 2, the microlens array 13 is provided with a plurality of microlenses 131a, In the embodiment, five microlens sheets 131 are connected in the second direction. Then, each of the microlens sheets 131 is supported by the support portion 130 by being supported by the frame-shaped support portion 130 by the bracket 133 or the like. Each of the microlenses 131a of the microlens sheet 131 is arranged on the optical path of the exposure light, and the erected equal-magnification image of the pattern 12a is formed on the substrate 2 by incident light transmitted through the mask 12.

支持微透鏡陣列13之支持部130,係為了以其邊緣部支持各微透鏡薄片131而形成框狀。從而,如圖2所示,在微透鏡薄片131間,藉由支持部130,形成不透射曝光光線之遮光區域。然後,在對準於此微透鏡薄片131間之遮光區域的位置處,設置有曝光光線透射用的開口132。於本實施形態中,開口132係設置於比微透鏡薄片131位於掃描方向之後方側的位置。從而,如圖1所示,在從光源11照射曝光光線3的同時,若光源11及微透鏡陣列13藉由驅動部對於遮罩12相對的於第1方向上移動,則藉由遮罩12及微透鏡131a之透射光,在基板2上之構成個別基板之區域上,遮罩12之圖案12a的正立等倍像20a會成像,並且,對應圖案12a之形狀而曝光基板上之正型光阻材料,以形成曝光圖案2a。此時,曝光圖案2a間之區域,係藉由以支持部130遮光,構成不照射曝光光線之部分。於本實施形態中,在支持部130,由於在對準於微透鏡薄片131間之遮光區域的位置處,設有曝光光線透射用的開口132,所以,以射出了曝光光線之狀態下,藉由驅動部,若使光源11及微透鏡陣列13對於遮罩12在第1方向上移動,則照射透射過開口132之曝光光線於位在曝光圖案2a間之區域的正型光阻材料(圖1中之區域20b)。藉此,可以確實曝光構成個別基板之區域間的正型光阻材料。從而,可以於後續之蝕刻步驟中,確實的除去曝光後之正型光阻材料,並可以防止各個別基板的邊緣部之回路發生短路。 The support portion 130 supporting the microlens array 13 is formed in a frame shape in order to support the respective lenticular sheets 131 at the edge portions thereof. Therefore, as shown in FIG. 2, between the microlens sheets 131, a light-shielding region that does not transmit the exposure light is formed by the support portion 130. Then, at a position aligned with the light shielding region between the lenticular sheets 131, an opening 132 for transmitting the exposure light is provided. In the present embodiment, the opening 132 is provided at a position on the side after the lenticular sheet 131 is located in the scanning direction. Therefore, as shown in FIG. 1, while the exposure light 3 is irradiated from the light source 11, the light source 11 and the microlens array 13 are moved by the driving portion in the first direction relative to the mask 12, by the mask 12. And the transmitted light of the microlens 131a, on the area of the substrate 2 constituting the individual substrate, the erect image 20a of the pattern 12a of the mask 12 is imaged, and the positive shape on the substrate is exposed corresponding to the shape of the pattern 12a A photoresist material to form an exposure pattern 2a. At this time, the region between the exposure patterns 2a is blocked by the support portion 130 to constitute a portion where the exposure light is not irradiated. In the present embodiment, the support portion 130 is provided with an opening 132 for transmitting the exposure light at a position aligned with the light-shielding region between the microlens sheets 131. Therefore, in the state in which the exposure light is emitted, When the light source 11 and the microlens array 13 are moved in the first direction by the driving portion, the exposure light that has passed through the opening 132 is irradiated to the positive photoresist material in the region between the exposure patterns 2a (Fig. Area 1b in 1). Thereby, the positive photoresist material between the regions constituting the individual substrates can be surely exposed. Therefore, it is possible to surely remove the exposed positive-type photoresist material in the subsequent etching step, and it is possible to prevent the circuit of the edge portion of each of the substrates from being short-circuited.

於本實施形態中,於支持部130設置有曝光光線透射用的開口132,在對準於微透鏡陣列13之兩端部的微透鏡薄片131之各 自外側的邊緣部之位置亦有設置,藉此,可以曝光基板2之邊緣部的正型光阻材料,並與上述之場合同樣的,於後續之蝕刻步驟中確實的除去曝光後之正型光阻材料,而可以防止個別基板之邊緣部的回路發生短路。 In the present embodiment, the support portion 130 is provided with an opening 132 for transmitting the exposure light, and each of the microlens sheets 131 aligned at both end portions of the microlens array 13 is provided. The position of the edge portion from the outer side is also provided, whereby the positive-type photoresist material at the edge portion of the substrate 2 can be exposed, and in the same manner as described above, the positive type after exposure is surely removed in the subsequent etching step. The photoresist material prevents the circuit of the edge portion of the individual substrate from being short-circuited.

接著,對本實施形態之曝光裝置的動作加以說明。於本實施形態中,首先,在表面形成透明電極材料,進而將於其上形成有正型光阻材料之基板2,導入曝光裝置1內,並設置於曝光開始位置。 Next, the operation of the exposure apparatus of this embodiment will be described. In the present embodiment, first, a transparent electrode material is formed on the surface, and a substrate 2 on which a positive resist material is formed is introduced into the exposure apparatus 1 and placed at an exposure start position.

然後,使曝光光線從光源11射出。從光源11射出了之曝光光線,係如圖1所示,入射到遮罩12。曝光光線3之位於遮罩12的照射區域,在垂直掃描方向之第2方向之寬度,係略微大於並列於第2方向上之複數的構成個別基板之區域。 Then, the exposure light is emitted from the light source 11. The exposure light emitted from the light source 11 is incident on the mask 12 as shown in FIG. The exposure light 3 is located in the irradiation region of the mask 12, and the width in the second direction in the vertical scanning direction is slightly larger than the plurality of regions constituting the individual substrates which are juxtaposed in the second direction.

由於在遮罩12,形成對應於在個別基板形成之透明電極的形狀之圖案12a,使曝光光線之一部分被此圖案12a遮住,入射遮罩12之透射光至微透鏡陣列13。 Since the pattern 12a corresponding to the shape of the transparent electrode formed on the individual substrate is formed in the mask 12, one portion of the exposure light is partially blocked by the pattern 12a, and the incident mask 12 transmits the light to the microlens array 13.

然後,藉由微透鏡陣列13之各微透鏡131a,在基板2上成像圖案12a之正立等倍像20a,並對應圖案12a之形狀曝光正型光阻材料。於本實施形態中,如圖2所示,微透鏡陣列13,係藉由各自設置有複數個微透鏡131a之5片微透鏡薄片131構成,相互間接續於第2方向上。然後,由於各微透鏡薄片131係藉由支持部130以支持邊緣部,故在微透鏡薄片131間,形成不會透射曝光光線之遮光區域。 Then, the erecting equal-magnification 20a of the pattern 12a is imaged on the substrate 2 by the respective microlenses 131a of the microlens array 13, and the positive-type photoresist material is exposed in accordance with the shape of the pattern 12a. In the present embodiment, as shown in FIG. 2, the microlens array 13 is composed of five microlens sheets 131 each provided with a plurality of microlenses 131a, and indirectly continues in the second direction. Then, since each of the microlens sheets 131 supports the edge portion by the support portion 130, a light shielding region that does not transmit the exposure light is formed between the microlens sheets 131.

但是,於本實施形態中,如圖3(a)所示,在支持部130,比微透鏡薄片131更靠近掃描方向之後方側的位置,在對準微透鏡薄片131間之遮光區域的位置處,設有曝光光線透射用的開口 132。從而,透射過開口132之曝光光線,亦照射在基板2上的構成個別基板之區域間的(區域20b的)正型光阻材料。 However, in the present embodiment, as shown in FIG. 3(a), the position of the light-shielding region between the lenticular sheets 131 is aligned with the lenticular sheet 131 at a position closer to the scanning direction than the lenticular sheet 131. Where there is an opening for the transmission of exposure light 132. Thus, the exposure light transmitted through the opening 132 also illuminates the positive photoresist material (of the region 20b) between the regions constituting the individual substrates on the substrate 2.

以此狀態,在繼續射出曝光光線的同時,若藉由驅動部,使光源11及微透鏡陣列13對於遮罩12在第1方向上移動,則在遮罩12之曝光光線的照射位置會在第1方向上移動。從而,一面在第1方向上掃描圖案12a,一面藉由微透鏡陣列13在基板2上依序成像,形成曝光圖案2a。 In this state, while the exposure light is continuously emitted, if the light source 11 and the microlens array 13 are moved in the first direction by the driving portion, the irradiation position of the exposure light in the mask 12 may be Move in the first direction. Therefore, the pattern 12a is scanned in the first direction, and the exposure pattern 2a is formed by sequentially imaging the substrate 2 on the substrate 2 by the microlens array 13.

此時,如圖3(b)所示,為追隨形成於基板上之圖案12a,亦於構成個別基板之區域間,於位在曝光圖案2a間之區域的正型光阻材料(圖1中之區域20b)照射透射過開口132之曝光光線,而形成曝光區域2b。於本實施形態中,由於開口132係在比微透鏡薄片131更靠近基板2之掃描方向的後方側之端部,在形成了曝光圖案2a時,在位於基板2之掃描方向前方側的曝光圖案2a間之區域,殘留未曝光之區域。但是,曝光圖案2a的形成結束後,一面照射曝光光線,一面藉由使光源11及微透鏡陣列13對於遮罩12進而於掃描方向上移動,也可以曝光在曝光圖案2a間殘留之未曝光的區域。藉此,可以確實使構成個別基板之區域間的全部正型光阻材料曝光,並可以將該曝光後之正型光阻材料,於後續之蝕刻步驟中,確實的除去,可以防止各個別基板的邊緣部之回路發生短路。 At this time, as shown in FIG. 3(b), in order to follow the pattern 12a formed on the substrate, and also between the regions constituting the individual substrates, the positive photoresist material in the region between the exposure patterns 2a (in FIG. 1) The region 20b) illuminates the exposure light transmitted through the opening 132 to form the exposed region 2b. In the present embodiment, the opening 132 is closer to the rear side in the scanning direction of the substrate 2 than the lenticular sheet 131, and the exposure pattern is located on the front side in the scanning direction of the substrate 2 when the exposure pattern 2a is formed. In the area between 2a, the unexposed area remains. However, after the formation of the exposure pattern 2a, the exposure light is irradiated, and the light source 11 and the microlens array 13 are moved in the scanning direction with respect to the mask 12, and the unexposed film remaining between the exposure patterns 2a may be exposed. region. Thereby, all of the positive-type photoresist materials between the regions constituting the individual substrates can be surely exposed, and the exposed positive-type photoresist materials can be surely removed in the subsequent etching step, thereby preventing the respective substrates. A short circuit occurs in the loop of the edge portion.

然後,若將曝光光線透射用的開口132,設置於對準微透鏡陣列13之兩端部的微透鏡薄片131之各個外側的邊緣部之位置,則亦可使基板2的邊緣部之正型光阻材料曝光,也可以防止位於該部分之個別基板的邊緣部回路發生短路,故為較佳之實施方式。 Then, when the opening 132 for transmitting the exposure light is disposed at the edge of each of the outer sides of the microlens sheet 131 which is aligned at both end portions of the microlens array 13, the edge portion of the substrate 2 can be made positive. The exposure of the photoresist material can also prevent short-circuiting of the edge portion of the individual substrates located in the portion, which is a preferred embodiment.

又,於本實施形態中,雖然設在支持部130之曝光光線透射用的開口132,係位於比微透鏡薄片131更靠近掃描方向之後方側 的位置,但是,如圖4所示,開口132,亦可設於比微透鏡薄片131更靠近掃描方向之前方側的位置。在這種情形下,形成於構成個別基板之區域圖案12a,係藉由對於遮罩12之光源11及微透鏡陣列13的移動,追隨著由開口132之透射光形成之曝光區域2b而形成。從而,曝光之開始位置,係決定於位在掃描方向之最後方的構成個別基板之區域間,在其最後端側之區域照射開口132之透射光的位置。藉此,與將開口132設置於比微透鏡薄片131更靠近位在掃描方向之後方側的端部之情況相同,不會於曝光圖案2a間殘留未曝光的區域,而可以使構成個別基板之區域間正型光阻材料確實地曝光。 Further, in the present embodiment, the opening 132 for the exposure light transmission provided in the support portion 130 is located closer to the scanning direction than the lenticular sheet 131. However, as shown in FIG. 4, the opening 132 is provided. It may be provided at a position closer to the front side than the microlens sheet 131 in the scanning direction. In this case, the area pattern 12a formed on the individual substrates is formed by following the movement of the light source 11 and the microlens array 13 of the mask 12 to follow the exposed area 2b formed by the transmitted light of the opening 132. Therefore, the start position of the exposure is determined between the regions constituting the individual substrates at the rear of the scanning direction, and the region at the rear end side of the region irradiating the transmitted light of the opening 132. Thereby, similarly to the case where the opening 132 is provided closer to the end side in the scanning direction than the microlens sheet 131, the unexposed area is not left between the exposure patterns 2a, and the individual substrates can be formed. Inter-area The positive photoresist material is definitely exposed.

又,也可以將開口132設置於比微透鏡薄片131更靠近基板2之掃描方向的前方側及後方側雙方之端部。此種場合,可以使曝光之開始位置配合於遮罩12的圖案12a,相較於上述場合,可以使光源11及微透鏡陣列13對於遮罩12相對地移動之行程縮短。 Further, the opening 132 may be provided at an end portion of both the front side and the rear side closer to the scanning direction of the substrate 2 than the lenticular sheet 131. In this case, the start position of the exposure can be matched to the pattern 12a of the mask 12, and the stroke of the light source 11 and the microlens array 13 relative to the movement of the mask 12 can be shortened compared to the above case.

接著,就有關本發明之第2實施形態的曝光裝置加以說明。於第1實施形態中,雖然遮罩12係以對應於基板2之大小而設置,但是,於本實施形態中,基板2係比第1實施形態之場合大,於第2方向,基板2之要曝光之區域的數量係比位於第2方向之遮罩12的圖案數多。從而,無法藉由1次的掃描使基板2之要曝光之區域曝光。 Next, an exposure apparatus according to a second embodiment of the present invention will be described. In the first embodiment, the mask 12 is provided corresponding to the size of the substrate 2. However, in the present embodiment, the substrate 2 is larger than in the first embodiment, and in the second direction, the substrate 2 is The number of areas to be exposed is larger than the number of patterns of the mask 12 located in the second direction. Therefore, the area of the substrate 2 to be exposed cannot be exposed by one scan.

於本實施形態中,曝光裝置具有控制裝置(不圖示),該控制裝置係用以控制位在第2方向之基板2的位置。例如,曝光裝置中,載置有基板2之平台的位置,係藉由控制裝置加以控制,而可以使基板2的位置於第2方向上移動。從而,於本實施形態中,若對應形成於遮罩12之圖案12a的數量之區域的曝光結束,控制裝置,會暫時停止來自光源11之曝光光線的射出。然後,控制裝置,係如圖5所示,使平台移動,以令藉由微透鏡陣列13之圖案 12a的正立等倍像成像於基板2之未曝光之區域。其後,控制裝置,使來自光源11之曝光光線再度開始射出,並一面藉由驅動部使光源11及微透鏡陣列13對於遮罩12相對地於第1方向上移動,一面與第1實施形態同樣的進行連續曝光。又,掃描方向係如圖5所示,若與第1實施形態之場合為相反方向,則無需在停止射出曝光光線時,回復光源11及微透鏡陣列13對於遮罩12之相對的位置,而可短縮曝光時程,故為較佳之實施方式。 In the present embodiment, the exposure apparatus includes a control device (not shown) for controlling the position of the substrate 2 positioned in the second direction. For example, in the exposure apparatus, the position of the stage on which the substrate 2 is placed is controlled by the control device, and the position of the substrate 2 can be moved in the second direction. Therefore, in the present embodiment, when the exposure corresponding to the number of patterns 12a formed in the mask 12 is completed, the control device temporarily stops the emission of the exposure light from the light source 11. Then, the control device, as shown in FIG. 5, moves the platform to make the pattern by the microlens array 13 The erect equal magnification image of 12a is imaged in the unexposed area of the substrate 2. Thereafter, the control device causes the exposure light from the light source 11 to start to be emitted again, and the light source 11 and the microlens array 13 are relatively moved in the first direction by the driving unit, and the first embodiment The same is done for continuous exposure. Further, as shown in FIG. 5, the scanning direction is opposite to the case of the first embodiment, and it is not necessary to return the relative positions of the light source 11 and the microlens array 13 to the mask 12 when the exposure light is stopped. The exposure time can be shortened, so it is a preferred embodiment.

本實施形態中,亦與第1實施形態相同,係藉由支持部130,在5片微透鏡薄片131間,形成有不透射曝光光線之遮光區域,但是,由於在支持部130,設有在對準微透鏡薄片131間之遮光區域的位置處之曝光光線透射用的開口132,故亦照射透射過開口132之曝光光線至基板2上的構成個別基板之區域間的(區域20b的)正型光阻材料。 In the present embodiment, as in the first embodiment, a light-shielding region that does not transmit exposure light is formed between the five lenticular sheets 131 by the support portion 130. However, the support portion 130 is provided in the support portion 130. The exposure light 132 for illuminating the light-transmitting region at the position between the lenticular sheets 131 is aligned, so that the exposure light transmitted through the opening 132 is also irradiated to the region (of the region 20b) between the regions constituting the individual substrates on the substrate 2. Type photoresist material.

若以此狀態,保持著繼續射出曝光光線,並藉由驅動部,使光源11及微透鏡陣列13對於遮罩12在第1方向上移動,則位在遮罩12之曝光光線的照射位置會向第1方向移動,並一面於第1方向掃描圖案12a,一面藉由微透鏡陣列13於基板2上依序成像,而形成曝光圖案2a。此時,為追隨於基板上形成之圖案12a,在構成個別基板之區域間,亦於位在曝光圖案2a間之區域的正型光阻材料(圖5中之區域20b)照射透射過開口132之曝光光線。但是,於本實施形態中,位於第1方向之開口132的位置,係位在比微透鏡薄片131更靠近婦描方向的前方側之位置,故進行與第1實施形態的變形例同樣之曝光。 If the exposure light is continuously emitted in this state, and the light source 11 and the microlens array 13 are moved in the first direction by the driving portion, the irradiation position of the exposure light at the mask 12 will be The exposure pattern 2a is formed by sequentially moving the microlens array 13 on the substrate 2 while moving in the first direction and scanning the pattern 12a in the first direction. At this time, in order to follow the pattern 12a formed on the substrate, a positive-type photoresist material (region 20b in FIG. 5) which is also in a region between the exposure patterns 2a is irradiated through the opening 132 between the regions constituting the individual substrates. Exposure light. However, in the present embodiment, the position of the opening 132 in the first direction is located closer to the front side than the lenticular sheet 131 in the smear direction, so that the exposure is the same as that of the modification of the first embodiment. .

如此,於本實施形態中,亦可以使構成個別基板之區域間的正型光阻材料確實地曝光,並可以於後續之蝕刻步驟中,確實地除去此曝光後之正型光阻材料,故可以防止各個別基板之邊緣部的回路發生短路。然後,若在對準微透鏡陣列13之兩端部的微透 鏡薄片131之各自外側的邊緣部之位置設置曝光光線透射用的開口132,亦可以使基板2之邊緣部的正型光阻材料曝光,並可以防止該部分中之個別基板的邊緣部回路發生短路,故為較佳之實施方式。 As described above, in the present embodiment, the positive-type photoresist material between the regions constituting the individual substrates can be reliably exposed, and the exposed positive-type photoresist material can be surely removed in the subsequent etching step. It is possible to prevent the circuit of the edge portion of each of the substrates from being short-circuited. Then, if the micro-lens array 13 is aligned with the micro-lens array 13 An opening 132 for transmitting the exposure light is disposed at an edge of each of the outer side edges of the mirror sheet 131, and the positive photoresist material at the edge portion of the substrate 2 can be exposed, and the edge portion loop of the individual substrates in the portion can be prevented from occurring. Short circuit is a preferred embodiment.

又,於本實施形態中,開口132亦可以設置於比微透鏡薄片131更靠近基板2之掃描方向的前方側及後方側雙方之端部,並藉由使曝光之開始位置配合於遮罩12之圖案12a,可縮短使光源11及微透鏡陣列13對於遮罩12相對地移動之行程。 Further, in the present embodiment, the opening 132 may be provided at an end portion of both the front side and the rear side closer to the scanning direction of the substrate 2 than the lenticular sheet 131, and the start position of the exposure is fitted to the mask 12 The pattern 12a shortens the stroke in which the light source 11 and the microlens array 13 are relatively moved with respect to the mask 12.

接著,就有關本發明之第3實施形態的曝光裝置加以說明。於本實施形態中,基板2比第2實施形態之場合大,於掃描方向之第1方向上,基板2之要曝光之區域的數量比第2方向上遮罩12之圖案數量多。從而,無法藉由1次的掃描使基板2之要曝光之區域曝光。 Next, an exposure apparatus according to a third embodiment of the present invention will be described. In the present embodiment, the substrate 2 is larger than in the case of the second embodiment, and the number of regions to be exposed of the substrate 2 in the first direction in the scanning direction is larger than the number of patterns of the mask 12 in the second direction. Therefore, the area of the substrate 2 to be exposed cannot be exposed by one scan.

於本實施形態中,在關於第2實施形態之曝光裝置中,控制裝置,亦可以在第1方向上控制基板2的位置。從而,於本實施形態中,在第2方向排列之預定的曝光對象區域之曝光結束後,控制裝置,會暫時停止來自光源11之曝光光線的射出。然後,控制裝置係如圖6所示,為了在基板2之未曝光的區域使藉由微透鏡陣列13之圖案12a的正立等倍像成像,使平台於第1方向上移動。其後,控制裝置,使來自光源11之曝光光線再度開始射出,並一面藉由驅動部使光源11及微透鏡陣列13相對於遮罩12在第1方向上移動,一面與第1實施形態及第2實施形態同樣的進行連續曝光。又,掃描方向係如圖6所示,若定為與第1實施形態的場合同一方向,則無需在停止曝光光線射出時,復原對於遮罩12之光源11及微透鏡陣列13之相對的位置,可以短縮曝光時程,故為較佳之實施方式。 In the present embodiment, in the exposure apparatus according to the second embodiment, the control device may control the position of the substrate 2 in the first direction. Therefore, in the present embodiment, after the exposure of the predetermined exposure target region arranged in the second direction is completed, the control device temporarily stops the emission of the exposure light from the light source 11. Then, as shown in FIG. 6, the control device moves the platform in the first direction in order to image the erecting equal-magnification image of the pattern 12a of the microlens array 13 in the unexposed region of the substrate 2. Thereafter, the control device causes the exposure light from the light source 11 to start to be emitted again, and the light source 11 and the microlens array 13 are moved in the first direction with respect to the mask 12 by the driving portion, and the first embodiment and the first embodiment In the second embodiment, continuous exposure was performed in the same manner. Further, as shown in Fig. 6, the scanning direction is the same as that in the case of the first embodiment, and it is not necessary to restore the relative position of the light source 11 and the microlens array 13 to the mask 12 when the exposure light is stopped. The exposure time can be shortened, so it is a preferred embodiment.

在本實施形態中,亦與第1實施形態及第2實施形態相同,雖然在5片微透鏡薄片131間,形成有不透射曝光光線之遮光區域,但是,由於在支持部130,設有在對準微透鏡薄片131間之遮光區域的位置處曝光光線透射用的開口132,故亦照射透射過開口132之曝光光線至基板2上的構成個別基板之區域間的(區域20b的)正型光阻材料。從而,藉由與第1實施形態及第2實施形態相同的連續曝光,可使構成個別基板之區域間的正型光阻材料確實地曝光,並可以於後續之蝕刻步驟中,確實地除去該曝光後之正型光阻材料,故可以防止各個別基板之邊緣部的回路發生短路。然後,若在對準微透鏡陣列13之兩端部的微透鏡薄片131之各自外側的邊緣部之位置設置曝光光線透射用的開口132,亦可以使基板2之邊緣部的正型光阻材料曝光,並可以防止該部分中之個別基板的邊緣部回路發生短路,故為較佳之實施方式。 In the present embodiment, as in the first embodiment and the second embodiment, a light-shielding region that does not transmit the exposure light is formed between the five microlens sheets 131. However, the support portion 130 is provided in the support portion 130. The opening 132 for light transmission is exposed at a position where the light shielding region between the microlens sheets 131 is aligned, so that the exposure light transmitted through the opening 132 is also irradiated to the positive region (of the region 20b) between the regions constituting the individual substrates on the substrate 2. Photoresist material. Therefore, by the same continuous exposure as in the first embodiment and the second embodiment, the positive resist material between the regions constituting the individual substrates can be reliably exposed, and the subsequent etching step can be surely removed. After the exposure of the positive photoresist material, it is possible to prevent the circuit of the edge portion of each substrate from being short-circuited. Then, if the opening 132 for the transmission of the exposure light is provided at the position of the edge portion of each of the outer sides of the microlens sheet 131 aligned at both end portions of the microlens array 13, the positive photoresist material of the edge portion of the substrate 2 can be made. The exposure is performed, and it is possible to prevent a short circuit in the edge portion loop of the individual substrates in the portion, which is a preferred embodiment.

又,於本實施形態中,開口132亦可設置於比微透鏡薄片131更靠近基板2之掃描方向的前方側及後方側雙方之端部,藉由使曝光之開始位置配合遮罩12之圖案12a,可以縮短使光源11及微透鏡陣列13對於遮罩12相對地移動之行程。 Further, in the present embodiment, the opening 132 may be provided at an end portion of both the front side and the rear side closer to the scanning direction of the substrate 2 than the lenticular sheet 131, and the start position of the exposure is matched with the pattern of the mask 12. 12a, the stroke for relatively moving the light source 11 and the microlens array 13 with respect to the mask 12 can be shortened.

又,就圖6中以雙點劃線表示之區域,在上述曝光結束後,藉由控制裝置,為了在基板2之未曝光區域使利用微透鏡陣列13之圖案12a的正立等倍像成像,而使平台於第2方向上移動,並藉由進行與上述同樣之曝光,可形成防止個別基板之邊緣部回發生短路的曝光區域。 Further, in the region indicated by the chain double-dashed line in Fig. 6, after the above-described exposure, the erecting equal-magnification image of the pattern 12a using the microlens array 13 is imaged in the unexposed area of the substrate 2 by the control means. The substrate is moved in the second direction, and by performing the same exposure as described above, an exposure region for preventing the edge portion of the individual substrate from being short-circuited can be formed.

於上述說明過之曝光裝置中,例如如圖7所示,設置有4台光源11,若對應各自之光源11,而設置遮罩12及微透鏡陣列13,則可以使更大型的基板2曝光,並可以得到縮短曝光時程之效果。 In the exposure apparatus described above, for example, as shown in FIG. 7, four light sources 11 are provided, and if the mask 12 and the microlens array 13 are provided corresponding to the respective light sources 11, the larger substrate 2 can be exposed. And can get the effect of shortening the exposure time.

[產業利用上可能性] [The possibility of industrial use]

本發明有益於,使用於行動電話用之小型液晶顯示面板等之製造上,以高解像力使遮罩之圖案曝光之曝光裝置。 The present invention is advantageous for an exposure apparatus for exposing a pattern of a mask with high resolution in the manufacture of a small liquid crystal display panel or the like for a mobile phone.

1‧‧‧曝光裝置 1‧‧‧Exposure device

11‧‧‧光源 11‧‧‧Light source

12‧‧‧遮罩 12‧‧‧ mask

13‧‧‧微透鏡陣列 13‧‧‧Microlens array

130‧‧‧支持部 130‧‧‧Support Department

131‧‧‧微透鏡薄片 131‧‧‧Microlens sheet

131a‧‧‧微透鏡 131a‧‧‧microlens

132‧‧‧曝光光線透射用的開口 132‧‧‧Opening opening for light transmission

133‧‧‧托架 133‧‧‧ bracket

2‧‧‧基板 2‧‧‧Substrate

2a‧‧‧曝光圖案 2a‧‧‧ exposure pattern

2b‧‧‧曝光區域 2b‧‧‧Exposure area

20a‧‧‧正立等倍像 20a‧‧‧正立等倍像

3‧‧‧曝光光線 3‧‧‧Exposure light

圖1表示藉由關於本發明之實施形態的曝光裝置之曝光的示意圖。 Fig. 1 is a view showing exposure by an exposure apparatus relating to an embodiment of the present invention.

圖2(a)表示,關於本發明之實施形態的曝光裝置中,微透鏡陣列及支持部之平面圖,(b)表示,關於本發明之實施形態的曝光裝置中,微透鏡陣列及支持部之局部擴大立體圖。 2(a) is a plan view showing a microlens array and a support portion in an exposure apparatus according to an embodiment of the present invention, and (b) is a view showing a microlens array and a support portion in an exposure apparatus according to an embodiment of the present invention. Partially enlarged perspective view.

圖3(a)表示,關於本發明之第1實施形態的曝光裝置中,在微透鏡陣列中之曝光光線的透射區域之圖式,(b)表示,形成於基板上之曝光區域的平面圖。 Fig. 3 (a) is a plan view showing a transmission region of exposure light in a microlens array in the exposure apparatus according to the first embodiment of the present invention, and Fig. 3 (b) is a plan view showing an exposure region formed on the substrate.

圖4(a)表示,關於第1實施形態之變形例的曝光裝置中,在微透鏡陣列中之曝光光線的透射區域之圖式,(b)表示,關於第1實施形態之變形例的曝光裝置中,形成於基板上之曝光區域的平面圖。 (a) of FIG. 4 is a view showing a transmission region of exposure light in a microlens array in the exposure apparatus according to the modification of the first embodiment, and (b) shows an exposure of a modification of the first embodiment. In the device, a plan view of an exposed region formed on a substrate.

圖5表示藉由關於本發明之第2實施形態的曝光裝置,形成於基板上之曝光區域的平面圖。 Fig. 5 is a plan view showing an exposure region formed on a substrate by an exposure apparatus according to a second embodiment of the present invention.

圖6表示藉由關於本發明之第3實施形態的曝光裝置,形成於基板上之曝光區域的平面圖。 Fig. 6 is a plan view showing an exposure region formed on a substrate by an exposure apparatus according to a third embodiment of the present invention.

圖7表示作為關於本發明之實施形態的曝光裝置之一例的立體圖。 Fig. 7 is a perspective view showing an example of an exposure apparatus according to an embodiment of the present invention.

1‧‧‧曝光裝置 1‧‧‧Exposure device

11‧‧‧光源 11‧‧‧Light source

12‧‧‧遮罩 12‧‧‧ mask

13‧‧‧微透鏡陣列 13‧‧‧Microlens array

Claims (10)

一種曝光裝置,其以曝光光線於第1方向上掃描表面形成有正型光阻材料之基板,而形成曝光圖案,包含:光源,用以射出曝光光線;遮罩,在垂直於該第1方向之第2方向上隔著預定之間隔設置要曝光之複數個圖案,來自於該光源之曝光光線透射該圖案;微透鏡陣列,配置有使該圖案之正立等倍像成像於該基板上之複數個微透鏡;框狀的支持部,用以支持該微透鏡陣列;以及驅動部,使該微透鏡陣列及該光源在該第1方向上對於該遮罩相對地移動;該微透鏡陣列,係由微透鏡薄片於該第2方向上接續而構成,該微透鏡薄片設置有複數個微透鏡;於該支持部,在對準該微透鏡陣列之該微透鏡薄片間的位置處,設有曝光光線透射用的開口。 An exposure apparatus for forming a substrate with a positive photoresist material by scanning light in a first direction to form an exposure pattern, comprising: a light source for emitting exposure light; and a mask perpendicular to the first direction a plurality of patterns to be exposed are disposed at a predetermined interval in a second direction, and exposure light from the light source is transmitted through the pattern; and the microlens array is configured to image an erecting image of the pattern on the substrate a plurality of microlenses; a frame-shaped support portion for supporting the microlens array; and a driving portion for moving the microlens array and the light source relative to the mask in the first direction; the microlens array, The microlens sheet is continuous in the second direction, and the microlens sheet is provided with a plurality of microlenses; and the support portion is disposed at a position between the microlens sheets of the microlens array An opening for exposing light transmission. 如申請專利範圍第1項所述之曝光裝置,其中,該支持部的開口,係設置於該基板之掃描方向的前方及後方雙方的端部。 The exposure apparatus according to claim 1, wherein the opening of the support portion is provided at both ends of the front side and the rear side in the scanning direction of the substrate. 如申請專利範圍第1項所述之曝光裝置,其中,該支持部的開口,係設置於該基板之掃描方向的前方及後方中之一方的端部。 The exposure apparatus according to claim 1, wherein the opening of the support portion is provided at one of an front end and a rear end of the substrate in the scanning direction. 如申請專利範圍第1至3項中任一項所述之曝光裝置,其中,於該支持部,更在對準該微透鏡陣列之兩端部的微透鏡薄片各自之外側的邊緣部之位置設置有曝光光線透射用的開口。 The exposure apparatus according to any one of claims 1 to 3, wherein the support portion is further positioned at an edge portion on an outer side of each of the microlens sheets at both end portions of the microlens array. An opening for transmitting the exposure light is provided. 如申請專利範圍第1至3項中任一項所述之曝光裝置,其中,更包含一控制裝置,用以在停止了來自該光源之曝光光線的射出之狀態,控制位於該第2方向之該基板的位置,在位於該基板之該第2方向的要曝光之區域的數量比位於該遮罩之該第2方向的圖案數量多的場合,該控制裝置,在將對應 該基板之該圖案數的區域曝光後,停止射出曝光光線,並使該基板於該第2方向上移動,而再次開始射出曝光光線,俾令該圖案之正立等倍像成像於該基板之未曝光的區域。 The exposure apparatus according to any one of claims 1 to 3, further comprising a control device for controlling the second direction in a state in which the emission of the exposure light from the light source is stopped When the number of regions of the substrate to be exposed in the second direction of the substrate is larger than the number of patterns in the second direction of the mask, the control device corresponds to After exposing the area of the pattern of the substrate, the exposure light is stopped, the substrate is moved in the second direction, and the exposure light is again emitted, and the erecting image of the pattern is imaged on the substrate. Unexposed area. 如申請專利範圍第5項所述之曝光裝置,其中,該控制裝置,在停止了來自該光源之曝光光線的射出之狀態,也可以控制位於該第1方向之該基板的位置;在位於該基板之該第1方向的要曝光之區域的數量比位於該遮罩之該第1方向的圖案數量多的場合,在將對應該基板之該圖案數的區域曝光後,停止射出曝光光線,並使該基板於該第1方向上移動,而再次開始射出曝光光線,俾令該圖案之正立等倍像成像於該基板之未曝光的區域。 The exposure apparatus according to claim 5, wherein the control device controls the position of the substrate located in the first direction while the emission of the exposure light from the light source is stopped; When the number of regions to be exposed in the first direction of the substrate is larger than the number of patterns in the first direction of the mask, the exposure light is stopped after exposing the region corresponding to the number of patterns of the substrate. The substrate is moved in the first direction, and the exposure light is again emitted, and the erecting equal-magnification image of the pattern is imaged on the unexposed region of the substrate. 一種曝光裝置用微透鏡陣列構造體,包含:光源,用以射出曝光光線;遮罩,在垂直於基板掃描方向的第1方向之第2方向隔著預定之間隔設置要曝光之複數個圖案,使來自該光源之曝光光線透射該圖案;微透鏡陣列,配置有使該圖案之正立等倍像成像於該基板上之複數個微透鏡;框狀的支持部,用以支持該微透鏡陣列;以及驅動部,其使該微透鏡陣列及該光源於該第1方向上對於該遮罩相對地移動;且一微透鏡陣列構造體使用於一曝光裝置,該曝光裝置以曝光光線於該第1方向上掃描表面形成了正型光阻材料之基板而形成曝光圖案,於該微透鏡陣列構造體中,該微透鏡陣列,係由微透鏡薄片於該第2方向上接續而構成,該微透鏡薄片設置有複數個微透鏡,在該支持部,在對準該微透鏡陣列的該微透鏡薄片間之位置處,設置有曝光光線透射用的開口。 A microlens array structure for an exposure apparatus, comprising: a light source for emitting an exposure light; and a mask for providing a plurality of patterns to be exposed at a predetermined interval in a second direction perpendicular to a first direction of the substrate scanning direction; Exposing the exposure light from the light source to the pattern; the microlens array is provided with a plurality of microlenses for imaging the erecting equal-magnification image of the pattern on the substrate; a frame-shaped support portion for supporting the microlens array And a driving portion that moves the microlens array and the light source relative to the mask in the first direction; and a microlens array structure is used in an exposure device, wherein the exposure device exposes light to the first Forming an exposure pattern by forming a substrate of a positive photoresist material on the scanning surface in one direction, and in the microlens array structure, the microlens array is formed by continuation of the microlens sheet in the second direction, the micro The lens sheet is provided with a plurality of microlenses, and at the support portion, an opening for transmitting the exposure light is provided at a position between the microlens sheets aligned with the microlens array. 如申請專利範圍第7項所述之曝光裝置用微透鏡陣列構造體,其中, 該支持部的開口,係設置於該基板之掃描方向的前方及後方雙方的端部。 The microlens array structure for an exposure apparatus according to claim 7, wherein The opening of the support portion is provided at both ends of the front side and the rear side in the scanning direction of the substrate. 如申請專利範圍第7項所述之曝光裝置用微透鏡陣列構造體,其中,該支持部的開口,係設置於該基板之掃描方向的前方及後方中之一方的端部。 The microlens array structure for an exposure apparatus according to claim 7, wherein the opening of the support portion is provided at one of an front end and a rear end of the substrate in the scanning direction. 如申請專利範圍第7至9項中任一項所述之曝光裝置用微透鏡陣列構造體,其中,於該支持部,更在對準該微透鏡陣列之兩端部的微透鏡薄片各自之外側的邊緣部之位置設置有曝光光線透射用的開口。 The microlens array structure for an exposure apparatus according to any one of claims 7 to 9, wherein in the support portion, each of the microlens sheets aligned at both end portions of the microlens array is further An opening for transmitting the exposure light is provided at the position of the outer edge portion.
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