TWI528599B - 發光二極體封裝方法 - Google Patents
發光二極體封裝方法 Download PDFInfo
- Publication number
- TWI528599B TWI528599B TW101129293A TW101129293A TWI528599B TW I528599 B TWI528599 B TW I528599B TW 101129293 A TW101129293 A TW 101129293A TW 101129293 A TW101129293 A TW 101129293A TW I528599 B TWI528599 B TW I528599B
- Authority
- TW
- Taiwan
- Prior art keywords
- emitting diode
- groove
- plate
- light
- colloid
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 23
- 238000004806 packaging method and process Methods 0.000 title claims description 10
- 239000000084 colloidal system Substances 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 238000004062 sedimentation Methods 0.000 claims description 4
- 230000005484 gravity Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Description
本發明涉及一種半導體的製造方法,尤其涉及一種發光二極體封裝方法。
相較於傳統的發光源,發光二極體(Light Emitting Diode,LED)具有重量輕、體積小、污染低、壽命長等優點,其作為一種新型的發光源,已經被越來越多地應用到各領域當中,如路燈、交通燈、信號燈、射燈及裝飾燈等。
現有的發光二極體封裝結構通常包括基板、位於基板上的電極、承載於基板上並與電極電性連接的發光二極體晶片以及設置在發光二極體晶片上的的螢光層及封裝膠。
現有的發光二極體封裝方法通常先將發光二極體晶粒設置在基板上,然後採用注膠(injection)或者轉注成形(transfer molding)的方式在發光二極體晶粒上形成包含有螢光物質的螢光層。但是該種封裝方法使得螢光物質直接與發光二極體晶粒接觸,在使用過程中,發光二極體晶粒的高溫會使螢光物質受熱過多而造成整個封裝結構可靠性降低的影響。
有鑒於此,有必要提供一種能夠確保封裝結構可靠性的發光二極體封裝方法。
一種發光二極體封裝方法,包括步驟:提供一具有多個通孔的板材,所述通孔貫穿板材的上、下表面;在板材的下表面設置藍膜,使藍膜覆蓋各通孔在板材下表面一側的開口,以使藍膜與通孔內壁共同形成朝向板材上表面開口的凹槽;從板材的上表面一側向凹槽內注入混有螢光物質的膠體;使膠體中的螢光物質沉澱至凹槽底部的藍膜上;向每個凹槽內嵌設發光二極體晶粒並使該發光二極體晶粒位於凹槽內的頂部位置。
該種發光二極體封裝方法將螢光物質沉澱至凹槽底部、並在凹槽內的頂部位置嵌設發光二極體晶粒,從而使得螢光物質與發光二極體晶粒相互隔離,避免使用過程中因高溫發光二極體晶粒將熱量直接傳給螢光物質而對封裝結構可靠性造成的不利影響。此外,該封裝方法被用於封裝白光發光二極體時,其螢光物質的設置方式還能夠增進白光發光二極體的光輸出。
下面參照附圖,結合具體實施例對本發明作進一步的描述。
10‧‧‧發光二極體封裝體
11‧‧‧板材
110‧‧‧上表面
112‧‧‧下表面
12‧‧‧通孔
120、122‧‧‧開口
13‧‧‧藍膜
14‧‧‧凹槽
15‧‧‧膠體
150‧‧‧螢光物質
16‧‧‧發光二極體晶粒
17‧‧‧透明膠體
18‧‧‧基板
圖1-圖12為本發明實施方式提供的發光二極體封裝方法的各步驟示意圖。
本發明實施方式提供的發光二極體封裝方法包括以下步驟。
第一步,請參見圖1及圖2,提供一具有多個通孔12的板材11,所述通孔12貫穿板材11的上、下表面110、112,如圖1及圖2所示。
該通孔12在板材11的上表面110處形成開口120,並在板材11的下表面112處形成開口122。所述開口120、122的形狀可為圓形、方
形或橢圓形等。本實施例中,該通孔12的內壁設置成為傾斜狀,也即,該通孔12的口徑自下表面112向上表面110逐漸縮小。進一步的,本實施例中,各通孔12在板材11上、下表面110、112處分別形成橢圓形開口。
第二步,請一併參見圖3,在板材11的下表面112設置藍膜13,使藍膜13覆蓋各通孔12在板材11下表面112一側的開口122,以使藍膜13與通孔12內壁共同形成朝向板材11上表面110開口的凹槽14。
第三步,參見圖4,從板材11的上表面110一側向凹槽14內注入混有螢光物質150的膠體15。
所述膠體15經由開口120注入凹槽14中,並覆蓋於凹槽14底部的藍膜13上。本實施例中,膠體15的高度低於凹槽14的深度。
第四步,參見圖5,使膠體15中的螢光物質150沉澱至凹槽14底部的藍膜13上。
在此,可採用重力沉降或離心沉降的方法使膠體15中的螢光物質150沉澱至凹槽14底部的藍膜13上。
第五步,向每個凹槽14內嵌設發光二極體晶粒16並使該發光二極體晶粒16位於凹槽14內的頂部位置。
該步驟中,首先用透明膠體17填滿凹槽14內未被混有螢光物質150的膠體15填滿的空間,如圖6所示;然後,提供事先設置在一具有電路結構的基板18上、並電連接至基板18的電路結構的發光二極體晶粒16,如圖7所示;接著,再將發光二極體晶粒16從板材11的上表面110一側嵌入所述透明膠體17內,如圖8及圖9所示
。從而,發光二極體晶粒16被封裝在位於凹槽14頂部位置的透明膠體17內,而螢光物質150位於凹槽14底部位置的藍膜13上。
第六步,去除藍膜13並切割板材11以得到多個分離的發光二極體封裝體10。
參見圖10,待膠體15以及透明膠體17固化後去除藍膜13,並沿圖11所示虛線切割板材11,以得到多個分離的、如圖12所示的發光二極體封裝體10。
該種發光二極體封裝方法將螢光物質150沉澱至凹槽14底部、並在凹槽14內的頂部位置嵌設發光二極體晶粒16,從而使得螢光物質150與發光二極體晶粒16相互隔離,避免使用過程中因高溫發光二極體晶粒16將熱量直接傳給螢光物質150而對封裝結構可靠性造成的不利影響。此外,該封裝方法被用於封裝白光發光二極體時,其螢光物質的設置方式還能夠增進白光發光二極體的光輸出。
需要說明的是,所述板材11的材質可為塑膠或金屬等,當板材11由塑膠製成時,為使通孔12的內壁具有反光特性,在第一步與第二部之間、或在第二步與第三步之間還可包括“在通孔12內壁上形成反射層”的步驟。當然,該板材11也可由具有反光性能的金屬製成,從而使得通孔12的內壁無需額外形成反射層即可具有反光的功效,因此可相應的省略“在通孔12內壁上形成反射層”的步驟。
此外,上述第三步中注入的膠體15量以覆蓋住凹槽14底部的藍膜、並不溢出凹槽14為佳。換句話說,膠體15並不局限於上述實施
例中所述的“高度低於凹槽14的深度”,只要該膠體能夠覆蓋住凹槽14底部的藍膜、並不溢出凹槽14即可。例如,該膠體15可以完全填滿整個凹槽14,待沉降螢光物質150之後,則無需再填充透明膠體17,直接將發光二極體晶粒16嵌入位於螢光物質150上方的膠體15中即可。
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。
11‧‧‧板材
110‧‧‧上表面
13‧‧‧藍膜
15‧‧‧膠體
150‧‧‧螢光物質
16‧‧‧發光二極體晶粒
17‧‧‧透明膠體
18‧‧‧基板
Claims (10)
- 一種發光二極體封裝方法,包括以下步驟:步驟一,提供一具有多個通孔的板材,所述通孔貫穿該板材的上、下表面;步驟二,在該板材的下表面設置藍膜,使該藍膜覆蓋各通孔在該板材下表面一側的開口,以使該藍膜與該通孔內壁共同形成朝向該板材上表面開口的凹槽;步驟三,從該板材的上表面一側向該凹槽內注入混有螢光物質的膠體;步驟四,使該膠體中的螢光物質沉澱至該凹槽底部的藍膜上;以及步驟五,向每個凹槽內嵌設發光二極體晶粒並使該發光二極體晶粒位於該凹槽內的頂部位置;以及步驟六,去除該藍膜並切割該板材以得到多個分離的發光二極體封裝體。
- 如申請專利範圍第1項所述的發光二極體封裝方法,其中,所述步驟一提供的該板材的各通孔在該板材上、下表面處分別形成橢圓形開口,所述通孔的口徑自下表面向上表面逐漸縮小。
- 如申請專利範圍第1項所述的發光二極體封裝方法,其中,所述步驟一和步驟二之間還包括步驟:在該通孔內壁上形成反光層。
- 如申請專利範圍第1項所述的發光二極體封裝方法,其中,所述步驟二和步驟三之間還包括步驟:在該通孔內壁上形成反光層。
- 如申請專利範圍第1項所述的發光二極體封裝方法,其中,所述步驟三向該凹槽中注入的膠體,在該凹槽內的高度小於該凹槽的深度。
- 如申請專利範圍第5項所述的發光二極體封裝方法,其中,所述步驟四和 步驟五之間還包括步驟:用透明膠體填滿該凹槽內未被混有螢光物質的膠體填滿的空間。
- 如申請專利範圍第6項所述的發光二極體封裝方法,其中,所述步驟五是將該發光二極體晶粒嵌入所述透明膠體內。
- 如申請專利範圍第1項所述的發光二極體封裝方法,其中,所述步驟四採用重力沉降的方法,使該膠體中的螢光物質沉澱至該凹槽底部的藍膜上。
- 如申請專利範圍第1項所述的發光二極體封裝方法,其中,所述步驟四採用離心沉降的方法,使該膠體中的螢光物質沉澱至該凹槽底部的藍膜上。
- 如申請專利範圍第1項所述的發光二極體封裝方法,其中,所述步驟五向每個凹槽內嵌設的該發光二極體晶粒,事先設置在一具有電路結構的基板上並電連接至電路結構。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210220867.9A CN103515368B (zh) | 2012-06-29 | 发光二极管封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201401567A TW201401567A (zh) | 2014-01-01 |
TWI528599B true TWI528599B (zh) | 2016-04-01 |
Family
ID=49778536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101129293A TWI528599B (zh) | 2012-06-29 | 2012-08-14 | 發光二極體封裝方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8765499B2 (zh) |
TW (1) | TWI528599B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10374134B2 (en) * | 2015-05-29 | 2019-08-06 | Nichia Corporation | Light emitting device, method of manufacturing covering member, and method of manufacturing light emitting device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012114107A (ja) * | 2010-11-19 | 2012-06-14 | Toshiba Corp | Ledパッケージ |
-
2012
- 2012-08-14 TW TW101129293A patent/TWI528599B/zh not_active IP Right Cessation
-
2013
- 2013-05-16 US US13/895,373 patent/US8765499B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8765499B2 (en) | 2014-07-01 |
US20140004632A1 (en) | 2014-01-02 |
CN103515368A (zh) | 2014-01-15 |
TW201401567A (zh) | 2014-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI528597B (zh) | 發光二極體封裝結構及其製造方法 | |
TWI648880B (zh) | 形成發光裝置之方法 | |
TWI546990B (zh) | 發光二極體封裝結構及其封裝方法 | |
TWI443875B (zh) | Led封裝結構的製作方法 | |
TWI606616B (zh) | 發光裝置封裝件 | |
CN103050615A (zh) | 一种高显色性白光led器件 | |
TW201409764A (zh) | 發光二極體模組及其製造方法 | |
CN202352723U (zh) | 具有均匀荧光粉涂布结构的led器件 | |
TWI455365B (zh) | 發光二極體封裝結構的製造方法 | |
CN103254889A (zh) | 荧光粉薄膜制作方法及相应的发光二极管封装方法 | |
TW201515273A (zh) | 發光二極體的製造方法 | |
TWI455370B (zh) | 發光二極體的製作方法 | |
TWI528599B (zh) | 發光二極體封裝方法 | |
CN206353544U (zh) | 一种cob光源 | |
TWI573245B (zh) | 發光二極體燈條 | |
TW201401566A (zh) | 發光二極體的封裝方法 | |
TWI412163B (zh) | 發光二極體封裝結構及其製造方法 | |
KR101724703B1 (ko) | 렌즈 패턴이 형성된 화이트 발광용 칩 패키지 | |
CN103515368B (zh) | 发光二极管封装方法 | |
KR20090051508A (ko) | 백색 발광소자 및 그 제조방법 | |
CN204760426U (zh) | 发光二极管封装结构 | |
TWI459598B (zh) | 半導體封裝製造方法及其封裝結構 | |
CN102832330A (zh) | 一种圆片级led封装结构 | |
TWI414089B (zh) | 發光二極體封裝方法 | |
TWI392124B (zh) | 一種發光二極體裝置及其封裝方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |