TWI527120B - Laser processing apparatus and method of controlling the same - Google Patents

Laser processing apparatus and method of controlling the same Download PDF

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Publication number
TWI527120B
TWI527120B TW101148247A TW101148247A TWI527120B TW I527120 B TWI527120 B TW I527120B TW 101148247 A TW101148247 A TW 101148247A TW 101148247 A TW101148247 A TW 101148247A TW I527120 B TWI527120 B TW I527120B
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Taiwan
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substrate
oxygen
platform
laser processing
unit
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TW101148247A
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Chinese (zh)
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TW201334077A (en
Inventor
朴憲旭
林基錫
金聖進
崔東奎
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Ap系統股份有限公司
三星顯示有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00Programme-control systems
    • G05B19/02Programme-control systems electric
    • G05B19/18Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
    • G05B19/402Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by control arrangements for positioning, e.g. centring a tool relative to a hole in the workpiece, additional detection means to correct position
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Laser Beam Processing (AREA)

Description

雷射處理裝置及其控制方法 Laser processing device and control method thereof

本發明涉及一種雷射處理裝置及其控制方法,尤其涉及一種雷射處理裝置及其控制方法,該雷射處理裝置能夠僅對襯底的待進行雷射處理的部分選擇性地進行雷射處理,並且能夠防止氣體存留在襯底與平臺之間直到襯底放置在平臺上。 The present invention relates to a laser processing apparatus and a control method thereof, and more particularly to a laser processing apparatus capable of selectively performing laser processing on a portion of a substrate to be subjected to laser processing, and a control method thereof. And it is possible to prevent gas from remaining between the substrate and the platform until the substrate is placed on the platform.

在製造半導體器件、平板顯示器(FPD)器件、或太陽能電池器件等時,當在高溫下沉積薄膜時,熱化學反應可能造成反應爐污染,或者可能產生不想要的化合物。 When manufacturing a semiconductor device, a flat panel display (FPD) device, or a solar cell device or the like, when a thin film is deposited at a high temperature, a thermochemical reaction may cause contamination of the reactor or may generate an undesired compound.

因而,使用雷射激發的等離子體化學氣相沉積在低溫下沉積薄膜。 Thus, a thin film is deposited at a low temperature using laser-excited plasma chemical vapor deposition.

同時,由於隨著襯底規格的增大,很難確保薄膜沉積和退火時的均勻性,因此已經提出了包括雷射退火處理的各種措施。 Meanwhile, since it is difficult to ensure uniformity in film deposition and annealing as the substrate size is increased, various measures including laser annealing treatment have been proposed.

反應室設置有進氣口/出氣口,通過所述進氣口/出氣口而供應反應氣體或從反應室排放反應氣體,並且在反應室上端設置有石英玻璃窗口。雷射裝置放置于該石英玻璃窗口上方,並且從該雷射裝置發射的雷射光束經過該石英玻璃窗口並到達反應室中的襯底。 The reaction chamber is provided with an air inlet/outlet port through which the reaction gas is supplied or discharged from the reaction chamber, and a quartz glass window is disposed at the upper end of the reaction chamber. A laser device is placed over the quartz glass window and a laser beam emitted from the laser device passes through the quartz glass window and reaches the substrate in the reaction chamber.

呈簾幕狀照射的雷射光束垂直於襯底或相對於襯底稍微傾斜。 The laser beam illuminated in the form of a curtain is perpendicular to the substrate or slightly inclined relative to the substrate.

襯底沿相對於雷射光束的一個方向水準移動,從而使雷射光束照射至襯底的整個表面。 The substrate is horizontally moved in one direction relative to the laser beam such that the laser beam illuminates the entire surface of the substrate.

名稱為“用於調節能量束的長度和強度的雷射處理裝置”的韓國專利申請號10-2010-0138509A(公開於2010年12月31日)公開了本發明的現有技 術。 Korean Patent Application No. 10-2010-0138509 A (published on Dec. 31, 2010) entitled "Surface Processing Apparatus for Adjusting the Length and Strength of Energy Beams" discloses the prior art of the present invention. Surgery.

然而,由於通用雷射處理裝置將雷射光束照射至整個襯底以執行雷射處理,雷射光束甚至會照射襯底的不需要進行處理的部分,從而很難減少雷射處理的時間。 However, since the general-purpose laser processing apparatus irradiates the laser beam to the entire substrate to perform laser processing, the laser beam may even illuminate a portion of the substrate that does not require processing, so that it is difficult to reduce the time of the laser processing.

另外,通用雷射處理裝置沒有設置有能夠將氣體從位於襯底與平臺之間的空間移除直到襯底放置在平臺上的分離器件。因此,當大襯底放置在平臺上時,氣體可能會存留在襯底與平臺之間。 Additionally, the universal laser processing apparatus is not provided with a separate device capable of removing gas from the space between the substrate and the platform until the substrate is placed on the platform. Therefore, when a large substrate is placed on the stage, gas may remain between the substrate and the stage.

當襯底放置在平臺上時,存留在襯底與平臺之間的氣體會使氣泡生成並使襯底不平坦。而且,在雷射處理過程中,存留在襯底與平臺之間的氣體能夠使雷射光束偏離聚焦範圍(focal range),並使在襯底總體區域上的熱處理不均勻。 When the substrate is placed on the platform, the gas remaining between the substrate and the platform causes bubbles to form and the substrate to be uneven. Moreover, during the laser processing, the gas remaining between the substrate and the platform can deflect the laser beam away from the focal range and cause uneven heat treatment over the entire area of the substrate.

因此,需要一種克服現有技術中的這類問題的雷射處理裝置。 Therefore, there is a need for a laser processing apparatus that overcomes such problems in the prior art.

本發明涉及一種雷射處理裝置及其控制方法,尤其涉及一種雷射處理裝置及其控制方法,該雷射處理裝置能夠僅對襯底的待進行雷射處理的部分選擇性地進行雷射處理,並且能夠防止氣體存留在襯底與平臺之間直到襯底放置在平臺上。 The present invention relates to a laser processing apparatus and a control method thereof, and more particularly to a laser processing apparatus capable of selectively performing laser processing on a portion of a substrate to be subjected to laser processing, and a control method thereof. And it is possible to prevent gas from remaining between the substrate and the platform until the substrate is placed on the platform.

根據本發明的一個方案,一種雷射處理裝置包括:平臺,其被放置在反應室內,且在所述平臺上放置襯底;真空單元,被提供給(be provided to)平臺以將氧氣從位於襯底與平臺之間的空間排放到反應室的外部;以及控制器,當襯底放置在平臺上時,其將操作信號發送到真空單元,使得依序從平臺的中心部向其週邊執行氧氣排放操作。 According to one aspect of the invention, a laser processing apparatus includes: a platform placed in a reaction chamber and a substrate placed on the platform; a vacuum unit provided to the platform to occlude oxygen from a space between the substrate and the platform is discharged to the outside of the reaction chamber; and a controller that, when the substrate is placed on the platform, transmits an operation signal to the vacuum unit such that oxygen is sequentially performed from the central portion of the platform to the periphery thereof Emissions operation.

該真空單元可以包括:多個真空孔,被提供給平臺;以及真空泵,被連接到真空孔並用以將氧氣排放到反應室外部。 The vacuum unit may include: a plurality of vacuum holes provided to the stage; and a vacuum pump connected to the vacuum holes and used to discharge oxygen to the outside of the reaction chamber.

該平臺可以包括:中心部,被設置為穿過平臺的中心將平臺分成兩個對稱部分;第一側部,鄰近中心部;第二側部,鄰近第一側部的外側;第三側部,鄰近第二側部的外側;以及多個交叉部,被設置為與第二側部交叉。 The platform may include a central portion disposed to divide the platform into two symmetrical portions through a center of the platform; a first side portion adjacent the center portion; a second side portion adjacent to an outer side of the first side portion; and a third side portion Adjacent to the outer side of the second side portion; and a plurality of intersection portions disposed to intersect the second side portion.

該真空孔可以包括:第一真空孔,形成在中心部中;第二真空孔,形成在第一側部中;第三真空孔,形成在第二側部中;第四真空孔,形成在第三 側部中;以及第五真空孔,形成在交叉部中。 The vacuum hole may include: a first vacuum hole formed in the center portion; a second vacuum hole formed in the first side portion; a third vacuum hole formed in the second side portion; and a fourth vacuum hole formed in the third And a fifth vacuum hole formed in the intersection.

根據本發明的另一個方案,一種雷射處理裝置的控制方法包括:當襯底放置在平臺上時,從放置在反應室內的該平臺的中心部排放氧氣;當氧氣從平臺的中心部完全排放時,從鄰近平臺的中心部的第一側部排放氧氣;當氧氣從第一側部完全排放時,從鄰近第一側部的外側的第二側部排放氧氣;當氧氣從第二側部完全排放時,從鄰近第二側部的外側的第三側部排放氧氣;以及當氧氣從第三側部完全排放時,從與第二側部交叉的交叉部排放氧氣。 According to another aspect of the present invention, a method of controlling a laser processing apparatus includes: discharging oxygen from a center portion of a stage placed in a reaction chamber when a substrate is placed on a stage; and completely discharging oxygen from a center portion of the stage when the substrate is placed on the stage Oxygen is discharged from a first side portion of a central portion of the adjacent platform; when oxygen is completely discharged from the first side portion, oxygen is discharged from a second side portion adjacent to the outer side of the first side portion; when oxygen is from the second side portion When fully discharged, oxygen is discharged from a third side adjacent to the outer side of the second side portion; and when oxygen is completely discharged from the third side portion, oxygen is discharged from the intersection portion intersecting the second side portion.

在根據本發明的雷射處理裝置及其控制方法中,由於雷射光束能夠僅照射襯底的待進行雷射處理的部分,照射雷射光束的操作時間得以縮短,因而能夠減少雷射處理的時間和成本。 In the laser processing apparatus and the control method therefor according to the present invention, since the laser beam can illuminate only the portion of the substrate to be subjected to the laser processing, the operation time for irradiating the laser beam can be shortened, thereby reducing the laser processing Time and cost.

另外,在根據本發明的雷射處理裝置及其控制方法中,在位於襯底與平臺之間的空間,從平臺的中心向其週邊按順序生成真空,以防止氣體存留在襯底與平臺之間,從而在大襯底的雷射處理過程中有效防止在襯底與平臺之間生成氣泡。 Further, in the laser processing apparatus and the control method thereof according to the present invention, in a space between the substrate and the stage, a vacuum is sequentially generated from the center of the stage to the periphery thereof to prevent gas from remaining in the substrate and the platform. Therefore, it is possible to effectively prevent bubbles from being generated between the substrate and the stage during the laser processing of the large substrate.

結果是,根據本發明的雷射處理裝置可以在大襯底的總體區域提供均勻的平坦度,允許雷射光束照射到位於聚焦範圍內的襯底,並能夠對大襯底的總體區域進行均勻的熱處理。 As a result, the laser processing apparatus according to the present invention can provide uniform flatness in the entire area of the large substrate, allow the laser beam to be irradiated to the substrate within the focus range, and can uniformize the entire area of the large substrate. Heat treatment.

10‧‧‧反應室 10‧‧‧Reaction room

12‧‧‧平臺 12‧‧‧ platform

12a‧‧‧中心部 12a‧‧‧ Central Department

12b‧‧‧第一側部 12b‧‧‧ first side

12c‧‧‧第二側部 12c‧‧‧ second side

12d‧‧‧第三側部 12d‧‧‧ third side

12e‧‧‧交叉部 12e‧‧‧Intersection

14‧‧‧驅動單元 14‧‧‧ drive unit

20‧‧‧標記單元 20‧‧‧Marking unit

22‧‧‧處理單元 22‧‧‧Processing unit

22a‧‧‧排出孔 22a‧‧‧Exhaust hole

24‧‧‧移除單元 24‧‧‧Remove unit

24a‧‧‧弧形(curved)部 24a‧‧‧curved part

24b‧‧‧真空孔 24b‧‧‧vacuum hole

26‧‧‧感測單元 26‧‧‧Sensor unit

26a‧‧‧第一感測器 26a‧‧‧first sensor

26b‧‧‧第二感測器 26b‧‧‧Second sensor

26c‧‧‧第三感測器 26c‧‧‧ third sensor

30‧‧‧真空單元 30‧‧‧vacuum unit

32‧‧‧真空孔 32‧‧‧vacuum hole

32a‧‧‧第一真空孔 32a‧‧‧First vacuum hole

32b‧‧‧第二真空孔 32b‧‧‧second vacuum hole

32c‧‧‧第三真空孔 32c‧‧‧ third vacuum hole

32d‧‧‧第四真空孔 32d‧‧‧fourth vacuum hole

32e‧‧‧第五真空孔 32e‧‧‧ fifth vacuum hole

34‧‧‧真空泵 34‧‧‧vacuum pump

34a‧‧‧第一真空泵 34a‧‧‧First vacuum pump

34b‧‧‧第二真空泵 34b‧‧‧second vacuum pump

34c‧‧‧第三真空泵 34c‧‧‧ third vacuum pump

34d‧‧‧第四真空泵 34d‧‧‧fourth vacuum pump

34e‧‧‧第五真空泵 34e‧‧‧ fifth vacuum pump

50‧‧‧雷射發生單元 50‧‧‧Laser generating unit

51‧‧‧阻擋單元 51‧‧‧Blocking unit

52‧‧‧殼體 52‧‧‧ housing

52a‧‧‧入口 52a‧‧‧ Entrance

52b‧‧‧出口 52b‧‧‧Export

54‧‧‧第一阻擋部 54‧‧‧First barrier

54a‧‧‧第一反射板 54a‧‧‧First reflector

54b‧‧‧第一旋轉軸 54b‧‧‧First rotating shaft

54c‧‧‧第一電機 54c‧‧‧First motor

56‧‧‧第二阻擋部 56‧‧‧second barrier

56a‧‧‧第二反射板 56a‧‧‧second reflector

56b‧‧‧第二旋轉軸 56b‧‧‧second axis of rotation

56c‧‧‧第二電機 56c‧‧‧second motor

58‧‧‧功率計 58‧‧‧Power meter

59‧‧‧束流收集器 59‧‧‧beam collector

70‧‧‧光學單元 70‧‧‧ Optical unit

72‧‧‧支撐件 72‧‧‧Support

74‧‧‧主體 74‧‧‧ Subject

76‧‧‧通道 76‧‧‧ channel

78‧‧‧供應單元 78‧‧‧Supply unit

80‧‧‧振動檢測單元 80‧‧‧Vibration detection unit

82‧‧‧第一振動檢測感測器 82‧‧‧First vibration detection sensor

84‧‧‧第二振動檢測感測器 84‧‧‧Second vibration detection sensor

86‧‧‧第三振動檢測感測器 86‧‧‧ Third vibration detection sensor

88‧‧‧第四振動檢測感測器 88‧‧‧fourth vibration detection sensor

90‧‧‧控制器 90‧‧‧ Controller

100‧‧‧襯底 100‧‧‧substrate

102‧‧‧基準點 102‧‧‧ benchmark

104‧‧‧間隙 104‧‧‧ gap

106‧‧‧處理位置 106‧‧‧Processing position

S10,S20,S30,S40,S50,S60,S70,S80,S90‧‧‧步驟 S10, S20, S30, S40, S50, S60, S70, S80, S90‧‧ steps

S41,S42,S44,S46,S48‧‧‧步驟 S41, S42, S44, S46, S48‧ ‧ steps

S110,S120,S130,S140,S150,S160‧‧‧步驟 S110, S120, S130, S140, S150, S160‧‧ steps

根據下面結合附圖所做的具體描述,本發明的上述和其他目的、特徵和其他優點將變得易於清楚理解,在附圖中:圖1是根據本發明的一個實施例的雷射處理裝置的透視圖;圖2是根據本發明的實施例的雷射處理裝置的反應室和標記單元的示意圖;圖3是襯底的平面圖,根據本發明的實施例的雷射處理裝置在該襯底上產生基準點;圖4是根據本發明的實施例的雷射處理裝置的標記單元的透視圖;圖5是根據本發明的實施例的雷射處理裝置的移除單元的透視圖;圖6是根據本發明的實施例的雷射處理裝置的阻擋(blocking)單元的透視圖; 圖7是根據本發明的實施例的雷射處理裝置在進行雷射檢驗時(upon laser inspection)的透視圖;圖8是根據本發明的實施例的雷射處理裝置的阻擋單元在操作時的透視圖;圖9是根據本發明的實施例的雷射處理裝置的平臺的平面圖;圖10是根據本發明的實施例的雷射處理裝置的框圖;圖11是根據本發明的實施例的雷射處理裝置的控制方法的流程圖;圖12是根據本發明的實施例的雷射處理裝置的氧氣排放過程的流程圖;以及圖13是根據本發明的實施例的雷射處理裝置的振動檢測過程的流程圖。 The above and other objects, features and other advantages of the present invention will become more <RTIgt; 2 is a schematic view of a reaction chamber and a marking unit of a laser processing apparatus according to an embodiment of the present invention; FIG. 3 is a plan view of a substrate on which a laser processing apparatus according to an embodiment of the present invention is FIG. 4 is a perspective view of a marking unit of a laser processing apparatus according to an embodiment of the present invention; FIG. 5 is a perspective view of a removing unit of the laser processing apparatus according to an embodiment of the present invention; Is a perspective view of a blocking unit of a laser processing apparatus in accordance with an embodiment of the present invention; Figure 7 is a perspective view of a laser processing apparatus performing laser inspection in accordance with an embodiment of the present invention; and Figure 8 is an operation of a blocking unit of a laser processing apparatus according to an embodiment of the present invention. 9 is a plan view of a stage of a laser processing apparatus according to an embodiment of the present invention; FIG. 10 is a block diagram of a laser processing apparatus according to an embodiment of the present invention; and FIG. 11 is a block diagram according to an embodiment of the present invention. A flowchart of a method of controlling a laser processing apparatus; FIG. 12 is a flowchart of an oxygen discharging process of a laser processing apparatus according to an embodiment of the present invention; and FIG. 13 is a vibration of a laser processing apparatus according to an embodiment of the present invention. Flow chart of the detection process.

下面將參照附圖對本發明的示例性實施例進行描述。須瞭解,附圖並不按照精確的比率繪製,而僅為方便描述和清楚起見,附圖可在線條厚度和部件尺寸的方面進行放大。除非有其他明確申明,這裡所用到的“一”、“一個”和“該”等單數形式的術語也可意圖包含複數形式。而且,這裡所用到的術語通過考慮本文公開的功能而加以限定,並且能夠根據使用者或操作者的習慣或意願而改變。因此,對術語的定義應該根據這裡給出的全文而定。 Exemplary embodiments of the present invention will be described below with reference to the accompanying drawings. It is to be understood that the appended drawings are not in the The singular terms such as "a", "an" Moreover, the terms used herein are defined by considering the functions disclosed herein and can be changed according to the habit or will of the user or operator. Therefore, the definition of terms should be based on the full text given here.

圖1是根據本發明的一個實施例的雷射處理裝置的透視圖;圖2是根據本發明的實施例的雷射處理裝置的反應室和標記單元的示意圖;以及圖3是襯底的平面圖,根據本發明的實施例的雷射處理裝置在該襯底上產生基準點。 1 is a perspective view of a laser processing apparatus according to an embodiment of the present invention; FIG. 2 is a schematic view of a reaction chamber and a marking unit of a laser processing apparatus according to an embodiment of the present invention; and FIG. 3 is a plan view of the substrate A laser processing apparatus according to an embodiment of the present invention generates a reference point on the substrate.

圖4是根據本發明的實施例的雷射處理裝置的標記單元的透視圖,以及圖5是根據本發明的實施例的雷射處理裝置的移除單元的透視圖。 4 is a perspective view of a marking unit of a laser processing apparatus according to an embodiment of the present invention, and FIG. 5 is a perspective view of a removing unit of the laser processing apparatus according to an embodiment of the present invention.

參照圖1至圖5,根據本發明的實施例的雷射處理裝置包括:反應室10,其包括上面放置襯底100的平臺12;標記單元20,提供給反應室10以在襯底100上形成基準點102;感測單元26,其檢測襯底100的位置或基準點102的位置;驅動單元14,其移動上面放置襯底100的平臺12;雷射發生單元50,其照射雷射光束;光學單元70,其將雷射發生單元50照射的雷射光束傳送到反應室10中;阻擋單元51,其阻擋從雷射發生單元50照射的雷射光 束;真空單元30,提供給平臺12,以將氧氣從位於襯底100與平臺12之間的空間排放到反應室10外部;振動檢測單元80,其檢測反應室10、雷射發生單元50、光學單元70或平臺12的振動;以及控制器90,其回應於從感測單元26發送的位置信號而發送操作信號至標記單元20或驅動單元14,還在襯底100放置在平臺12上時發送操作信號給真空單元30以使從平臺12的中心部12a開始至其週邊循序執行氧氣排放操作,以及根據從振動檢測單元80發送的振動信號確定是否操作阻擋單元51。 Referring to FIGS. 1 through 5, a laser processing apparatus according to an embodiment of the present invention includes a reaction chamber 10 including a stage 12 on which a substrate 100 is placed, and a marking unit 20 provided to the reaction chamber 10 to be on the substrate 100. Forming a reference point 102; a sensing unit 26 that detects the position of the substrate 100 or the position of the reference point 102; a driving unit 14 that moves the stage 12 on which the substrate 100 is placed; and a laser generating unit 50 that illuminates the laser beam An optical unit 70 that transmits the laser beam irradiated by the laser generating unit 50 into the reaction chamber 10; a blocking unit 51 that blocks the laser light irradiated from the laser generating unit 50 a vacuum unit 30, which is supplied to the platform 12 to discharge oxygen from a space between the substrate 100 and the stage 12 to the outside of the reaction chamber 10; a vibration detecting unit 80 that detects the reaction chamber 10, the laser generating unit 50, Vibration of the optical unit 70 or the platform 12; and a controller 90 that transmits an operational signal to the marking unit 20 or the driving unit 14 in response to a position signal transmitted from the sensing unit 26, also when the substrate 100 is placed on the platform 12. An operation signal is sent to the vacuum unit 30 to sequentially perform an oxygen discharge operation from the center portion 12a of the stage 12 to its periphery, and whether or not to operate the blocking unit 51 based on the vibration signal transmitted from the vibration detecting unit 80.

當在反應室10內接納了襯底100時,由感測單元26檢測襯底100的位置,並且將位置信號發送到控制器90。然後,回應於從控制器90發送的操作信號而驅動該驅動單元14,且移動襯底100,使得襯底100中的目標位置朝向標記單元20。 When the substrate 100 is received within the reaction chamber 10, the position of the substrate 100 is detected by the sensing unit 26, and the position signal is transmitted to the controller 90. Then, the driving unit 14 is driven in response to an operation signal transmitted from the controller 90, and the substrate 100 is moved such that the target position in the substrate 100 faces the marking unit 20.

當襯底100中的目標位置移動到朝向標記單元20時,通過標記單元20而在襯底100中的目標位置處形成基準點102。 When the target position in the substrate 100 is moved toward the marking unit 20, the reference point 102 is formed at the target position in the substrate 100 by the marking unit 20.

在襯底100上形成基準點102後,通過計算從基於從感測單元26發送的位置信號而確定的基準點102到待要在其上執行雷射處理的處理位置106的距離和方向來確定處理位置106。 After the reference point 102 is formed on the substrate 100, it is determined by calculating the distance and direction from the reference point 102 determined based on the position signal transmitted from the sensing unit 26 to the processing position 106 on which the laser processing is to be performed. Processing location 106.

操作驅動單元14以移動襯底100,使得襯底100的處理位置106朝向發射到反應室10中的雷射光束。 The drive unit 14 is operated to move the substrate 100 such that the processing location 106 of the substrate 100 is directed toward a laser beam that is emitted into the reaction chamber 10.

然後,來自雷射發生單元50的雷射光束在其沿光學單元70被反射的同時被提供到反應室100中。這裡,雷射光束通過放置在反應室10上側的石英玻璃窗口而被提供到反應室10中。 Then, the laser beam from the laser generating unit 50 is supplied into the reaction chamber 100 while it is reflected along the optical unit 70. Here, the laser beam is supplied into the reaction chamber 10 through a quartz glass window placed on the upper side of the reaction chamber 10.

此時,由於襯底100放置在反應室10中的平臺12的上表面上,因此通過提供到反應室10中的雷射光束,在襯底100的處理位置106上執行雷射處理。 At this time, since the substrate 100 is placed on the upper surface of the stage 12 in the reaction chamber 10, the laser processing is performed on the processing position 106 of the substrate 100 by the laser beam supplied to the reaction chamber 10.

標記單元20包括:處理單元22,被放置在反應室10內,並且該處理單元22將雷射光束照射至襯底100;以及移除單元24,其吸入(suction)在通過處理單元22形成基準點102時從襯底100產生的雜質(foreign matter),並將該雜質排放至反應室10外部。 The marking unit 20 includes a processing unit 22 placed in the reaction chamber 10, and the processing unit 22 irradiates a laser beam to the substrate 100, and a removal unit 24 that is sucked in forming a reference by the processing unit 22. The foreign matter generated from the substrate 100 at the point 102 is discharged to the outside of the reaction chamber 10.

由於處理單元22被放置在反應室10內,因此不單獨執行在襯底100上形成基準點102的操作,且基準點102可在反應室10內接納了襯底100之後 並在執行雷射處理之前形成。 Since the processing unit 22 is placed within the reaction chamber 10, the operation of forming the fiducials 102 on the substrate 100 is not performed separately, and the fiducials 102 may be after the substrate 100 is received within the reaction chamber 10. And formed before performing laser processing.

在形成基準點102時,從處理單元22提供的雷射光束照射至襯底100,並且從襯底100產生的雜質被移除單元24吸入並排放到反應室10外部。 At the time of forming the reference point 102, the laser beam supplied from the processing unit 22 is irradiated to the substrate 100, and the impurities generated from the substrate 100 are taken in by the removing unit 24 and discharged to the outside of the reaction chamber 10.

移除單元24包括:弧形(curved)部24a,具有圍繞處理單元22的C形;以及真空孔24b,形成在弧形部24a中以吸入雜質。 The removing unit 24 includes a curved portion 24a having a C shape surrounding the processing unit 22, and a vacuum hole 24b formed in the curved portion 24a to suck impurities.

弧形部24a在平面圖中呈C形,其形成在形成移除單元24的區域(block)下端,被設置成圍繞著處理單元22的被雷射光束照射的那部分。 The curved portion 24a is C-shaped in plan view, which is formed at the lower end of the block forming the removal unit 24, and is disposed to surround the portion of the processing unit 22 that is illuminated by the laser beam.

多個真空孔24b被形成在弧形部24a的內壁上,並被連接至真空泵,由此從處理單元22發射的雷射光束經過弧形部24a並照射到襯底100,從而形成基準點102。 A plurality of vacuum holes 24b are formed on the inner wall of the curved portion 24a, and are connected to the vacuum pump, whereby the laser beam emitted from the processing unit 22 passes through the curved portion 24a and is irradiated to the substrate 100, thereby forming a reference point. 102.

此時,從襯底100產生的雜質被真空孔24b吸入,並沿著移除單元24中限定的路徑被排放至反應室10外部。 At this time, impurities generated from the substrate 100 are sucked by the vacuum holes 24b and discharged to the outside of the reaction chamber 10 along the path defined in the removal unit 24.

本領域技術人員能夠很容易地實現從真空孔24b向反應室10和處理單元22外部延伸的路徑,因而省略其具體圖示和描述。 A person extending from the vacuum hole 24b to the outside of the reaction chamber 10 and the processing unit 22 can be easily realized by those skilled in the art, and thus its detailed illustration and description are omitted.

感測單元26包括:第一感測器26a,用於檢測襯底100的角部;第二感測器26b,用以檢測基準點102的位置,以及第三感測器26c,用以檢測照射到反應室10中的雷射光束的位置。 The sensing unit 26 includes a first sensor 26a for detecting a corner of the substrate 100, a second sensor 26b for detecting the position of the reference point 102, and a third sensor 26c for detecting The position of the laser beam that is incident on the reaction chamber 10 is illuminated.

當在反應室10內接納了襯底100且該襯底100被放置在平臺12的上表面上時,多個第一感測器26a檢測襯底100的角部,並發送位置信號,由此控制器90確定襯底100的位置。 When the substrate 100 is received in the reaction chamber 10 and the substrate 100 is placed on the upper surface of the stage 12, the plurality of first sensors 26a detect the corners of the substrate 100 and transmit a position signal, thereby Controller 90 determines the location of substrate 100.

當襯底100偏離預設位置時,根據從控制器90發送的驅動信號來驅動該驅動單元14,從而移動襯底100。 When the substrate 100 is deviated from the preset position, the driving unit 14 is driven in accordance with a driving signal transmitted from the controller 90, thereby moving the substrate 100.

因而,能夠將襯底100放置在預設位置處,使得襯底100中的目標位置能夠朝向標記單元20,並且雷射光束從處理單元22照射至目標位置以形成基準點102。 Thus, the substrate 100 can be placed at a preset position such that the target position in the substrate 100 can face the marking unit 20, and the laser beam is irradiated from the processing unit 22 to the target position to form the reference point 102.

當基準點102完全被形成時,由第二感測器26b檢測基準點102的位置,第二感測器26b依次將位置信號發送至控制器90。然後,控制器90基於基準點102來計算處理位置106。 When the reference point 102 is completely formed, the position of the reference point 102 is detected by the second sensor 26b, and the second sensor 26b sequentially transmits the position signal to the controller 90. Controller 90 then calculates processing location 106 based on reference point 102.

由於第三感測器26c檢測通過光學單元70照射到反應室10中的雷射光束的位置,因此雷射光束的位置被控制為使得雷射光束照射的位置朝向位於 雷射處理的初始平臺中的襯底100的處理位置106。 Since the third sensor 26c detects the position of the laser beam irradiated into the reaction chamber 10 by the optical unit 70, the position of the laser beam is controlled such that the position of the laser beam is directed toward The processing location 106 of the substrate 100 in the initial stage of the laser processing.

圖6是根據本發明的實施例的雷射處理裝置的阻擋單元的透視圖,圖7是根據本發明的實施例的雷射處理裝置在進行雷射檢驗時的透視圖,以及圖8是根據本發明的實施例的雷射處理裝置的阻擋單元在操作時的透視圖。 6 is a perspective view of a barrier unit of a laser processing apparatus according to an embodiment of the present invention, and FIG. 7 is a perspective view of a laser processing apparatus according to an embodiment of the present invention when performing laser inspection, and FIG. 8 is based on A perspective view of the blocking unit of the laser processing apparatus of the embodiment of the present invention in operation.

圖9是根據本發明的實施例的雷射處理裝置的平臺的平面圖,以及圖10是根據本發明的實施例的雷射處理裝置的框圖。 9 is a plan view of a platform of a laser processing apparatus in accordance with an embodiment of the present invention, and FIG. 10 is a block diagram of a laser processing apparatus in accordance with an embodiment of the present invention.

參照圖1和圖6至圖10,真空單元30包括:多個真空孔32,被提供給平臺12;以及真空泵34,被連接到真空孔32以將氧氣排放到反應室10外部。 Referring to FIGS. 1 and 6 to 10, the vacuum unit 30 includes a plurality of vacuum holes 32 provided to the stage 12, and a vacuum pump 34 connected to the vacuum holes 32 to discharge oxygen to the outside of the reaction chamber 10.

在由感測單元26檢測襯底100的位置且襯底100中的目標位置通過驅動單元14被設置成朝向標記單元20之後,操作真空泵34,使得存留在位於襯底100與平臺12之間的空間中的氧氣通過真空孔32吸入並被排放至反應室10外部。 After the position of the substrate 100 is detected by the sensing unit 26 and the target position in the substrate 100 is set to face the marking unit 20 by the driving unit 14, the vacuum pump 34 is operated such that it remains between the substrate 100 and the stage 12. Oxygen in the space is drawn in through the vacuum hole 32 and discharged to the outside of the reaction chamber 10.

因而,可防止氧氣存留在襯底100與平臺12之間,且在雷射處理期間可防止在襯底100上產生雜質。 Thus, oxygen can be prevented from remaining between the substrate 100 and the stage 12, and generation of impurities on the substrate 100 can be prevented during the laser processing.

平臺12包括:中心部12a,被設置為穿過平臺12的中心以將平臺12分成兩個對稱部分(section);第一側部12b,鄰近中心部12a;第二側部12c,鄰近第一側部12b的外側;第三側部12d,鄰近第二側部12c的外側;以及多個交叉部12e,被設置為與第二側部12c交叉。 The platform 12 includes a central portion 12a disposed to pass through the center of the platform 12 to divide the platform 12 into two symmetrical sections; a first side portion 12b adjacent the center portion 12a; and a second side portion 12c adjacent to the first portion The outer side of the side portion 12b; the third side portion 12d adjacent to the outer side of the second side portion 12c; and the plurality of intersection portions 12e are disposed to intersect the second side portion 12c.

當從位於襯底100與平臺12之間的空間排放氧氣時,為了防止氧氣存留在襯底100的中心部12a,從襯底100的中心部12a朝向襯底100週邊循序執行排放氧氣的操作。 When oxygen is discharged from the space between the substrate 100 and the stage 12, in order to prevent oxygen from remaining in the central portion 12a of the substrate 100, the operation of discharging oxygen is sequentially performed from the central portion 12a of the substrate 100 toward the periphery of the substrate 100.

因而,如上所述,平臺12的上表面被分成中心部12a、第一側部12b、第二側部12c、第三側部12d和交叉部12e,並放置從各部分向反應室10外部延伸的排氣管(exhaust line)。 Thus, as described above, the upper surface of the stage 12 is divided into the central portion 12a, the first side portion 12b, the second side portion 12c, the third side portion 12d, and the intersection portion 12e, and is placed to extend from the respective portions to the outside of the reaction chamber 10. Exhaust line.

真空孔32包括:第一真空孔32a,形成在中心部12a中;第二真空孔32b,形成在第一側部12b中;第三真空孔32c,形成在第二側部12c中;第四真空孔32d,形成在第三側部12d;以及第五真空孔32e,形成在交叉部12e中。 The vacuum hole 32 includes a first vacuum hole 32a formed in the center portion 12a, a second vacuum hole 32b formed in the first side portion 12b, and a third vacuum hole 32c formed in the second side portion 12c; A vacuum hole 32d is formed in the third side portion 12d; and a fifth vacuum hole 32e is formed in the intersection portion 12e.

當襯底100被精確放置在平臺12上從而使襯底100中的目標位置朝向標記單元20時,驅動第一真空泵34a(其連接至形成於平臺12的中心部12a中的第一真空孔32a)以從襯底100的中心部12a排放氧氣。 When the substrate 100 is accurately placed on the stage 12 such that the target position in the substrate 100 faces the marking unit 20, the first vacuum pump 34a is driven (which is connected to the first vacuum hole 32a formed in the central portion 12a of the stage 12) The oxygen is discharged from the central portion 12a of the substrate 100.

之後,順序驅動第二真空泵34b、第三真空泵34c、第四真空泵34d和第五真空泵34e,因而依序從第一側部12b、第二側部12c、第三側部12d和交叉部12e排放氧氣,因此而防止氧氣存留在襯底100與平臺12之間。 Thereafter, the second vacuum pump 34b, the third vacuum pump 34c, the fourth vacuum pump 34d, and the fifth vacuum pump 34e are sequentially driven, thereby sequentially discharging from the first side portion 12b, the second side portion 12c, the third side portion 12d, and the intersection portion 12e. Oxygen thus prevents oxygen from remaining between the substrate 100 and the platform 12.

交叉部12e是指與第二側部12c交叉的部分,並且以均勻的間隔排列多個交叉部12e。 The intersection portion 12e refers to a portion that intersects the second side portion 12c, and the plurality of intersection portions 12e are arranged at even intervals.

當大尺寸的襯底100被放置在平臺12上時,即使依序將氧氣從中心部12a排放至外部,在位於中心部12a與第三側部12d之間的空間中仍可能存留氧氣。 When the large-sized substrate 100 is placed on the stage 12, even if oxygen is sequentially discharged from the center portion 12a to the outside, oxygen may remain in the space between the center portion 12a and the third side portion 12d.

因而,在從中心部12a沿橫側方向依序排放氧氣之後,當從與第二側部12c交叉的交叉部12e排放氧氣時,能夠有效地防止氧氣存留在大尺寸的襯底100與平臺12之間。 Therefore, after the oxygen is sequentially discharged from the center portion 12a in the lateral direction, when oxygen is discharged from the intersection portion 12e crossing the second side portion 12c, oxygen can be effectively prevented from remaining in the large-sized substrate 100 and the stage 12 between.

阻擋單元51包括:殼體52,其放置在雷射發生單元50的排出口處並包括入口52a和出口52b;第一阻擋部54,放置在入口52a與出口52b之間以反射雷射光束,從而防止雷射光束通過出口52b照射;以及功率計(power meter)58,用於測量被第一阻擋部54反射的雷射光束的強度。 The blocking unit 51 includes a housing 52 placed at the discharge port of the laser generating unit 50 and including an inlet 52a and an outlet 52b; a first blocking portion 54 placed between the inlet 52a and the outlet 52b to reflect the laser beam, Thereby, the laser beam is prevented from being radiated through the outlet 52b; and a power meter 58 for measuring the intensity of the laser beam reflected by the first blocking portion 54.

當雷射光束從雷射發生單元50照射放置在平臺12上的襯底100時,雷射光束通過入口52a引入殼體52中,並通過出口52b朝向光學單元70照射。 When the laser beam is irradiated from the laser generating unit 50 to the substrate 100 placed on the stage 12, the laser beam is introduced into the casing 52 through the inlet 52a and is irradiated toward the optical unit 70 through the outlet 52b.

在照射到光學單元70之中的雷射光束經過多個透鏡之後,所述雷射光束朝向反應室10折射或反射,並照射至放置在平臺12上的襯底100。 After the laser beam irradiated into the optical unit 70 passes through the plurality of lenses, the laser beam is refracted or reflected toward the reaction chamber 10 and irradiated to the substrate 100 placed on the stage 12.

在本實施例中,由於雷射光束被阻擋單元51選擇性地阻擋,因此在雷射發生單元50的操作期間照射到反應室10中的雷射光束可被選擇性地阻擋。 In the present embodiment, since the laser beam is selectively blocked by the blocking unit 51, the laser beam irradiated into the reaction chamber 10 during the operation of the laser generating unit 50 can be selectively blocked.

因而,雷射處理可被執行為使得在襯底100上待執行雷射處理的處理位置106之間連續排列有間隔。 Thus, the laser processing can be performed such that intervals are continuously arranged between the processing locations 106 on the substrate 100 where laser processing is to be performed.

當雷射光束被照射到帶有放置在平臺12上的襯底100的反應室10中時,利用雷射光束對襯底100執行雷射處理,隨著平臺12通過驅動單元14向一側移動,雷射光束在掃描襯底100的同時在寬的區域上執行雷射處理。 When the laser beam is irradiated into the reaction chamber 10 with the substrate 100 placed on the stage 12, laser processing is performed on the substrate 100 using the laser beam, as the stage 12 is moved to one side by the driving unit 14. The laser beam performs laser processing on a wide area while scanning the substrate 100.

在本實施例中,雷射光束通過阻擋單元51而選擇性地照射到反應室10中。因而,當在平臺12被驅動單元14移動的同時以均勻的時間間隔將雷射光束照射到反應室10中時,襯底100經受雷射處理,從而以均勻的間隔排列多個處理位置106。 In the present embodiment, the laser beam is selectively irradiated into the reaction chamber 10 through the blocking unit 51. Thus, when the laser beam is irradiated into the reaction chamber 10 at uniform time intervals while the stage 12 is moved by the driving unit 14, the substrate 100 is subjected to laser processing, thereby arranging the plurality of processing positions 106 at even intervals.

第一阻擋部54包括:第一反射板54a,被放置在入口52a與出口52b之間;第一旋轉軸54b,用以支撐第一反射板54a並被可旋轉地設置在殼體52中;以及第一電機54c,用以向第一旋轉軸54b提供動力。 The first blocking portion 54 includes: a first reflecting plate 54a disposed between the inlet 52a and the outlet 52b; a first rotating shaft 54b for supporting the first reflecting plate 54a and being rotatably disposed in the housing 52; And a first motor 54c for supplying power to the first rotating shaft 54b.

第一旋轉軸54b被連接至第一反射板54a的一端。因而,當第一旋轉軸54b通過第一電機54c旋轉時,第一反射板54a在繞著旋轉軸旋轉的同時經過入口52a與出口52b之間的空間。 The first rotating shaft 54b is connected to one end of the first reflecting plate 54a. Thus, when the first rotating shaft 54b is rotated by the first motor 54c, the first reflecting plate 54a passes through the space between the inlet 52a and the outlet 52b while rotating about the rotating shaft.

當第一反射板54a被設置在入口52a與出口52b之間時,通過入口52a引入殼體52中的雷射光束被第一反射板54a反射,並被引向功率計58,而不是沿著出口52b排放到殼體52外部。 When the first reflecting plate 54a is disposed between the inlet 52a and the outlet 52b, the laser beam introduced into the casing 52 through the inlet 52a is reflected by the first reflecting plate 54a and directed to the power meter 58 instead of along The outlet 52b is discharged to the outside of the housing 52.

因而,當雷射光束照射到反應室10中時,雷射光束以均勻的時間間隔照射,並執行雷射處理以在襯底100上的處理位置106之間形成間隙104。 Thus, when the laser beam is irradiated into the reaction chamber 10, the laser beams are illuminated at uniform time intervals, and laser processing is performed to form a gap 104 between the processing locations 106 on the substrate 100.

由於被第一反射板54反射的雷射光束照射到功率計58,因此能夠測量從雷射發生單元50照射的雷射光束的強度。 Since the laser beam reflected by the first reflecting plate 54 is irradiated to the power meter 58, the intensity of the laser beam irradiated from the laser generating unit 50 can be measured.

在本發明的本實施例中,阻擋單元51還包括:第二阻擋部56,其通過第一阻擋部54反射雷射光束;以及束流收集器(beam dump)59,其補償(offset)通過第二阻擋部56反射的雷射光束。 In the present embodiment of the invention, the blocking unit 51 further includes: a second blocking portion 56 that reflects the laser beam through the first blocking portion 54; and a beam dump 59 that is offset by The laser beam reflected by the second blocking portion 56.

由於第一反射板54a反射的雷射光束沒有被引向功率計58而是通過第二阻擋部56的操作朝向束流收集器59反射,因此雷射光束通過束流收集器59而被補償。 Since the laser beam reflected by the first reflecting plate 54a is not directed to the power meter 58 but is reflected by the operation of the second blocking portion 56 toward the beam dump 59, the laser beam is compensated by the beam dump 59.

利用功率計58測量雷射光束的強度的操作被週期性地執行,或者當在特定條件下執行測試時予以執行。 The operation of measuring the intensity of the laser beam with the power meter 58 is performed periodically, or when the test is performed under certain conditions.

因而,如在本發明的實施例中,當襯底100在間斷的處理位置106處經受雷射處理時,第一阻擋部54與第二阻擋部56同時被操作為使得通過入口52a發射到殼體52中的雷射光束被反射向束流收集器59,以通過第一阻擋部54和第二阻擋部56而被補償。 Thus, as in the embodiment of the invention, when the substrate 100 is subjected to a laser process at the intermittent processing location 106, the first barrier 54 and the second barrier 56 are simultaneously operated such that they are emitted through the inlet 52a to the shell. The laser beam in the body 52 is reflected toward the beam dump 59 to be compensated by the first barrier 54 and the second barrier 56.

第二阻擋部56包括:第二反射板56a,被放置在第一反射板54a與功率計58之間;第二旋轉軸56b,用以支撐第二反射板56a並被可旋轉地設置在殼體52中;以及第二電機56c,用於向第二旋轉軸56b提供動力。 The second blocking portion 56 includes: a second reflecting plate 56a placed between the first reflecting plate 54a and the power meter 58; and a second rotating shaft 56b for supporting the second reflecting plate 56a and rotatably disposed in the case And a second motor 56c for supplying power to the second rotating shaft 56b.

由於第二反射板56a被設置在第一反射板54a與功率計58之間,當給第二電機56c施加電力以旋轉第二旋轉軸56b時,被第一反射板54反射向功率 計58的雷射光束因此被第二反射板56反射向束流收集器59。 Since the second reflecting plate 56a is disposed between the first reflecting plate 54a and the power meter 58, when the second motor 56c is applied with electric power to rotate the second rotating shaft 56b, it is reflected by the first reflecting plate 54 to the power. The laser beam of meter 58 is thus reflected by second reflector 56 to beam dump 59.

第一電機54c是轉速高於第二電機56c的大容量電機,從而使得隨著第一反射板54a的轉速的增加,襯底100上的處理位置106之間的間隙變小,且能夠在緊急情況下立即阻擋雷射光束。 The first motor 54c is a large-capacity motor having a higher rotational speed than the second motor 56c, so that as the rotational speed of the first reflecting plate 54a increases, the gap between the processing positions 106 on the substrate 100 becomes smaller, and can be in an emergency In case of the situation, the laser beam is blocked immediately.

振動檢測單元80包括:第一振動檢測感測器82,被提供給反應室10;第二振動檢測感測器84,被提供給雷射發生單元50;第三振動檢測感測器86,被提供給光學單元70;以及第四振動檢測感測器88,被提供給平臺12。 The vibration detecting unit 80 includes a first vibration detecting sensor 82 that is supplied to the reaction chamber 10, a second vibration detecting sensor 84 that is supplied to the laser generating unit 50, and a third vibration detecting sensor 86 that is Provided to the optical unit 70; and a fourth vibration detecting sensor 88 is provided to the platform 12.

在執行雷射處理時,由第一振動檢測感測器82測量在反應室10中發生的振動,由第二振動檢測感測器84測量在雷射發生單元50中發生的振動,由第三振動檢測感測器86測量在光學單元70中發生的振動,以及由第四振動檢測感測器88測量在平臺12中發生的振動。 When the laser processing is performed, the vibration occurring in the reaction chamber 10 is measured by the first vibration detecting sensor 82, and the vibration occurring in the laser generating unit 50 is measured by the second vibration detecting sensor 84, by the third The vibration detecting sensor 86 measures the vibration occurring in the optical unit 70, and the vibration occurring in the stage 12 is measured by the fourth vibration detecting sensor 88.

當由第一至第三振動檢測感測器82至86測量的振動幅度大於或等於預設值時,控制器90確定異常狀態,並向第一電機54c發送驅動信號。然後,在第一旋轉軸54b旋轉的同時,第一反射板54a將雷射光束反射向功率計58。 When the amplitude of the vibration measured by the first to third vibration detecting sensors 82 to 86 is greater than or equal to the preset value, the controller 90 determines an abnormal state and transmits a driving signal to the first motor 54c. Then, while the first rotating shaft 54b is rotating, the first reflecting plate 54a reflects the laser beam toward the power meter 58.

其結果是,能夠阻擋沿光學單元70照射到反應室10中的雷射光束,且能夠停止雷射處理。 As a result, the laser beam irradiated into the reaction chamber 10 along the optical unit 70 can be blocked, and the laser processing can be stopped.

當由第四振動檢測感測器88測量的振動幅度大於或等於預設值時,控制器90確定異常狀態,並向平臺12發送控制信號,從而補償平臺12中發生的振動。 When the amplitude of the vibration measured by the fourth vibration detecting sensor 88 is greater than or equal to the preset value, the controller 90 determines an abnormal state and transmits a control signal to the platform 12 to compensate for the vibration occurring in the platform 12.

在本實施例中,平臺12是空氣平臺12,其填充有支撐該平臺12的氣體。本領域技術人員能夠很容易地實現這種空氣平臺12,因而省略其具體圖示或描述。 In the present embodiment, the platform 12 is an air platform 12 that is filled with gas that supports the platform 12. Such an air platform 12 can be easily implemented by those skilled in the art, and thus its detailed illustration or description is omitted.

在本發明的實施例中,光學單元70包括:主體74,被放置得鄰近雷射發生單元50的阻擋單元51;支撐件72,用於支撐主體74;通道76,從主體74延伸向反應室10的石英玻璃窗口;以及供應單元78,通過將光學透鏡放置到通道76的一端而配置。 In an embodiment of the invention, the optical unit 70 includes a body 74, a barrier unit 51 disposed adjacent to the laser generating unit 50, a support member 72 for supporting the body 74, and a passage 76 extending from the body 74 to the reaction chamber A quartz glass window of 10; and a supply unit 78 configured by placing an optical lens at one end of the channel 76.

光學單元70的第三振動檢測感測器86可被提供給主體74,可被提供給放置在通道76中的多個透鏡,或者可被提供給放置在供應單元78中的光學透鏡。 The third vibration detecting sensor 86 of the optical unit 70 may be provided to the body 74, may be provided to a plurality of lenses placed in the channel 76, or may be provided to an optical lens placed in the supply unit 78.

本領域技術人員能夠很容易地改進這種配置,因而省略其他實施例的具 體圖示或描述。 Those skilled in the art can easily improve this configuration, and thus the other embodiments are omitted. Body icon or description.

附圖標記22a表示排出孔22a,通過該排出孔22a雷射光束從處理單元22照射。 Reference numeral 22a denotes a discharge hole 22a through which a laser beam is irradiated from the processing unit 22.

下面將描述根據本發明的實施例的雷射處理裝置的控制方法。 A control method of the laser processing apparatus according to an embodiment of the present invention will be described below.

圖11是根據本發明的實施例的雷射處理裝置的控制方法的流程圖。圖12是根據本發明的實施例的雷射處理裝置的氧氣排放過程的流程圖。圖13是根據本發明的實施例的雷射處理裝置的振動檢測過程的流程圖。 11 is a flow chart of a control method of a laser processing apparatus according to an embodiment of the present invention. 12 is a flow chart of an oxygen discharge process of a laser processing apparatus in accordance with an embodiment of the present invention. Figure 13 is a flow chart of a vibration detecting process of a laser processing apparatus in accordance with an embodiment of the present invention.

參照圖1至圖13,根據本發明的實施例的雷射處理裝置的控制方法包括以下步驟:檢測放置在反應室10內的襯底100的位置(S10);移動襯底100,使得標記單元20朝向襯底100中的目標位置(S20);驅動標記單元20以在襯底100上形成基準點102(S30);從位於襯底100與平臺12之間的空間移除氧氣(S40);在開始處理之後,確定是否初始化執行雷射處理(S50);計算並存儲相對於基準點102的待要執行雷射處理的處理位置106(S60);將雷射光束從反應室10外部照射到反應室10中以對襯底100的與存儲在控制器90中的處理位置106對應的那部分執行雷射處理(S70);以及確定雷射處理後的襯底100的數量是否達到預設值(S80)。 1 to 13, a control method of a laser processing apparatus according to an embodiment of the present invention includes the steps of detecting a position of a substrate 100 placed in a reaction chamber 10 (S10); moving the substrate 100 such that a marking unit 20 toward a target position in the substrate 100 (S20); driving the marking unit 20 to form a reference point 102 on the substrate 100 (S30); removing oxygen from a space between the substrate 100 and the stage 12 (S40); After starting the process, it is determined whether or not the laser processing is initially performed (S50); the processing position 106 to be subjected to the laser processing with respect to the reference point 102 is calculated and stored (S60); the laser beam is irradiated from the outside of the reaction chamber 10 to The laser processing is performed in the reaction chamber 10 on the portion of the substrate 100 corresponding to the processing position 106 stored in the controller 90 (S70); and it is determined whether the number of the substrate 100 after the laser processing reaches a preset value. (S80).

當襯底100被提供到反應室10中並放置在平臺12上時,第一感測器26a檢測襯底100的角部,並且基於從第一感測器26發送的位置信號,通過控制器90對襯底100的位置與預設位置進行比較。 When the substrate 100 is supplied into the reaction chamber 10 and placed on the stage 12, the first sensor 26a detects the corner of the substrate 100 and passes the controller based on the position signal transmitted from the first sensor 26 The position of 90 pairs of substrates 100 is compared to a preset position.

當襯底100的位置偏離預設位置時,利用從控制器90發送的驅動信號驅動該驅動單元14以將該襯底100重新佈置在預設位置處。 When the position of the substrate 100 deviates from the preset position, the driving unit 14 is driven with a driving signal transmitted from the controller 90 to rearrange the substrate 100 at a preset position.

這裡所使用的術語“預設位置”是指襯底100中的目標位置被設置為朝向標記單元20的位置。 The term "preset position" as used herein means that the target position in the substrate 100 is set to a position toward the marking unit 20.

當在襯底100被設置在預設位置處之後從處理單元22照射雷射光束以在襯底100上形成基準點102時,基準點102可被形成在重複提供至反應室10的每一個襯底100的同一位置處。 When the laser beam is irradiated from the processing unit 22 after the substrate 100 is set at the preset position to form the reference point 102 on the substrate 100, the reference point 102 may be formed in each of the linings repeatedly supplied to the reaction chamber 10. At the same position of the bottom 100.

在形成基準點102之後,第二感測器26b檢測基準點102的位置並向控制器90發送位置信號,而第三感測器26c檢測雷射光束照射位置並向控制器90發送位置信號。 After forming the reference point 102, the second sensor 26b detects the position of the reference point 102 and transmits a position signal to the controller 90, while the third sensor 26c detects the laser beam irradiation position and transmits a position signal to the controller 90.

基於從第二感測器26b和第三感測器26c發送的位置信號,控制器90 計算相對於基準位置102的待要執行雷射處理的處理位置106。 Based on the position signals transmitted from the second sensor 26b and the third sensor 26c, the controller 90 A processing location 106 relative to the reference location 102 where laser processing is to be performed is calculated.

通過感測單元26的操作,即使在依次將多個襯底100提供到反應室10中時重複進行雷射處理的情況下,也可在多個襯底100上的同一處理位置106處執行雷射處理。 By the operation of the sensing unit 26, even in the case where the laser processing is repeatedly performed while sequentially supplying the plurality of substrates 100 into the reaction chamber 10, the lightning can be performed at the same processing position 106 on the plurality of substrates 100. Shot processing.

在確定於開始處理之後是否初始化執行雷射處理的操作S50中,當確定於開始處理之後不初始化執行雷射處理時,執行將雷射光束從反應室10外部照射到反應室10中以對襯底100的與存儲於控制器90中的處理位置106對應的那部分執行雷射處理的操作S70。 In the operation S50 of determining whether or not to perform the laser processing after the start of the process, when it is determined that the laser process is not initialized after the start of the process, the laser beam is irradiated from the outside of the reaction chamber 10 into the reaction chamber 10 to be aligned. The portion of the bottom 100 corresponding to the processing position 106 stored in the controller 90 performs an operation S70 of the laser processing.

在對多個襯底100進行雷射處理的大規模生產工藝中,按照在初始化執行雷射處理時存儲在控制器90中的處理位置106對每個襯底100的同一部分連續執行雷射處理。 In a large-scale production process in which a plurality of substrates 100 are subjected to laser processing, laser processing is continuously performed on the same portion of each substrate 100 in accordance with the processing position 106 stored in the controller 90 at the time of initializing the execution of the laser processing. .

因而,由於對於再次執行雷射處理省略了計算相對於基準點102的處理位置的操作S60,因此能夠減少雷射處理的時間。 Thus, since the operation S60 of calculating the processing position with respect to the reference point 102 is omitted for performing the laser processing again, the time of the laser processing can be reduced.

在前述雷射處理中,由於雷射光束通過被第一電機54c旋轉的第一反射板54a而選擇性地提供至反應室10,因此雷射處理可被執行為使得能夠在襯底100上以均勻的間隔連續地排列多個處理位置106。 In the foregoing laser processing, since the laser beam is selectively supplied to the reaction chamber 10 through the first reflection plate 54a rotated by the first motor 54c, the laser processing can be performed to enable the substrate 100 to be The plurality of processing locations 106 are continuously arranged at even intervals.

因而,在於雷射處理之後執行的處理中,處理位置106基於基準點102而得以確定,並且能夠僅在雷射處理後的處理位置106上執行後繼處理。 Thus, in the processing performed after the laser processing, the processing position 106 is determined based on the reference point 102, and the subsequent processing can be performed only on the processing position 106 after the laser processing.

如上所述,由於沒有在不用作產品的襯底100上執行雷射處理或後繼處理,而是僅在處理位置106上執行這些處理,因而能夠降低產品製造時間和成本。 As described above, since laser processing or subsequent processing is not performed on the substrate 100 which is not used as a product, but these processing is performed only at the processing position 106, product manufacturing time and cost can be reduced.

當重複進行雷射處理且雷射處理後的襯底100的數量達到預設值時,結束雷射處理。 When the laser processing is repeated and the number of substrates 100 after the laser processing reaches a preset value, the laser processing is ended.

在確定雷射處理後的襯底100的數量是否達到預設值的操作(S80)中,當確定雷射處理後的襯底100的數量沒有達到預設值時,執行對反應室10中經受雷射處理的襯底100的卸出並供應新的襯底100的操作(S90),而後執行檢測襯底100的位置的操作(S10)。 In the operation (S80) of determining whether the number of the substrates 100 after the laser processing reaches the preset value (S80), when it is determined that the number of the substrates 100 after the laser processing has not reached the preset value, the execution in the reaction chamber 10 is performed. The operation of the laser-processed substrate 100 to discharge and supply the new substrate 100 is performed (S90), and then the operation of detecting the position of the substrate 100 is performed (S10).

移除存留在襯底100與平臺12之間的氧氣的操作(S40)包括:當襯底100放置在反應室10內的平臺12上時,從平臺12的中心部12a排放氧氣(S41);當氧氣從中心部12a完全排放時,從鄰近中心部12a的第一側部 12b排放氧氣(S42);當氧氣從第一側部12b完全排放時,從鄰近第一側部12b的外側的第二側部12c排放氧氣(S44);當氧氣從第二側部12c完全排放時,從鄰近第二側部12c的外側的第三側部12d排放氧氣(S46);以及當氧氣從第三側部12d完全排放時,從與第二側部12c交叉的交叉部12e排放氧氣(S48)。 The operation of removing oxygen remaining between the substrate 100 and the stage 12 (S40) includes: when the substrate 100 is placed on the stage 12 in the reaction chamber 10, discharging oxygen from the central portion 12a of the platform 12 (S41); When the oxygen is completely discharged from the center portion 12a, from the first side portion adjacent to the center portion 12a 12b discharges oxygen (S42); when oxygen is completely discharged from the first side portion 12b, oxygen is discharged from the second side portion 12c adjacent to the outside of the first side portion 12b (S44); when oxygen is completely discharged from the second side portion 12c At the time, oxygen is discharged from the third side portion 12d adjacent to the outer side of the second side portion 12c (S46); and when oxygen is completely discharged from the third side portion 12d, oxygen is discharged from the intersection portion 12e crossing the second side portion 12c (S48).

在移動襯底100而使襯底100中的目標位置朝向標記單元20之後,氧氣從襯底100的中心部12a初始排放,而後從第一側部12b、第二側部12c和第三側部12d依序排放。 After moving the substrate 100 such that the target position in the substrate 100 faces the marking unit 20, oxygen is initially discharged from the central portion 12a of the substrate 100, and then from the first side portion 12b, the second side portion 12c, and the third side portion. 12d is discharged in sequence.

然後,由於氧氣從與第二側部12c交叉的交叉部12e再次得到排放,因此能夠有效地防止氧氣存留在襯底100與平臺12之間。 Then, since oxygen is again discharged from the intersection portion 12e crossing the second side portion 12c, it is possible to effectively prevent oxygen from remaining between the substrate 100 and the stage 12.

具體而言,當將大尺寸的襯底100放置在平臺12上時,氧氣很可能會存留在襯底100的中心部12a與側端之間。 In particular, when the large-sized substrate 100 is placed on the stage 12, oxygen is likely to remain between the central portion 12a and the side end of the substrate 100.

在本實施例中,由於氧氣從中心部12a向外部依序排放,並且之後從與第二側部12c交叉的交叉部12e再次得到排放,因此能夠更有效地防止氧氣存留在大尺寸的襯底100與平臺12之間。 In the present embodiment, since oxygen is sequentially discharged to the outside from the center portion 12a, and then discharged again from the intersection portion 12e crossing the second side portion 12c, it is possible to more effectively prevent oxygen from remaining in the large-sized substrate. 100 is between the platform 12.

在雷射處理裝置的控制方法中的執行雷射處理的操作(S70)中,執行檢測在反應室10、雷射發生單元50、光學單元70和平臺12中發生的振動的操作。 In the operation (S70) of performing the laser processing in the control method of the laser processing apparatus, an operation of detecting vibrations occurring in the reaction chamber 10, the laser generating unit 50, the optical unit 70, and the stage 12 is performed.

在雷射處理裝置的控制方法中,檢測雷射處理裝置中的振動的過程包括:確定包括上面放置襯底100的平臺12的反應室10的振動幅度是否小於預設值(S110);當反應室10的振動幅度小於預設值時,確定雷射發生單元50(用於生成待要照射到反應室10中的雷射光束)的振動幅度是否小於預設值(S120);當雷射發生單元50的振動幅度小於預設值時,確定光學單元70(用於將從雷射發生單元50照射的雷射光束引入反應室10中)的振動幅度是否小於預設值(S130);以及當光學單元70的振動幅度小於預設值時,確定平臺12的振動幅度是否小於預設值(S140)。 In the control method of the laser processing apparatus, the process of detecting the vibration in the laser processing apparatus includes: determining whether the vibration amplitude of the reaction chamber 10 including the stage 12 on which the substrate 100 is placed is smaller than a preset value (S110); When the vibration amplitude of the chamber 10 is less than a preset value, it is determined whether the vibration amplitude of the laser generating unit 50 (for generating a laser beam to be irradiated into the reaction chamber 10) is less than a preset value (S120); when a laser occurs When the vibration amplitude of the unit 50 is less than a preset value, it is determined whether the vibration amplitude of the optical unit 70 (for introducing the laser beam irradiated from the laser generating unit 50 into the reaction chamber 10) is smaller than a preset value (S130); When the vibration amplitude of the optical unit 70 is less than the preset value, it is determined whether the vibration amplitude of the stage 12 is smaller than a preset value (S140).

當執行雷射處理的操作S70時,由第一振動測量感測器82測量反應室10的振動,由第二振動檢測感測器84測量雷射發生單元50的振動,由第三振動檢測感測器86測量光學單元70的振動,以及由第四振動檢測感測器88測量平臺12的振動。 When the operation S70 of the laser processing is performed, the vibration of the reaction chamber 10 is measured by the first vibration measuring sensor 82, the vibration of the laser generating unit 50 is measured by the second vibration detecting sensor 84, and the sense of the third vibration is detected by the third vibration detecting unit The detector 86 measures the vibration of the optical unit 70, and the vibration of the stage 12 is measured by the fourth vibration detecting sensor 88.

在測量反應室10的振動的操作S110中,當確定反應室10的振動幅度大於或等於預設值時,執行通過阻擋單元51的操作來阻擋雷射光束的操作S150。 In operation S110 of measuring the vibration of the reaction chamber 10, when it is determined that the vibration amplitude of the reaction chamber 10 is greater than or equal to a preset value, the operation S150 of blocking the laser beam by the operation of the blocking unit 51 is performed.

在測量雷射發生單元50的振動的操作S120中,當確定雷射發生單元50的振動幅度大於或等於預設值時,執行通過阻擋單元51的操作來阻擋雷射光束的操作S150。 In operation S120 of measuring the vibration of the laser generating unit 50, when it is determined that the vibration amplitude of the laser generating unit 50 is greater than or equal to a preset value, the operation S150 of blocking the laser beam by the operation of the blocking unit 51 is performed.

在測量光學單元70的振動的操作S130中,當確定光學單元70的振動幅度大於或等於預設值時,執行通過阻擋單元51的操作來阻擋雷射光束的操作S150。 In operation S130 of measuring the vibration of the optical unit 70, when it is determined that the vibration amplitude of the optical unit 70 is greater than or equal to the preset value, the operation S150 of blocking the laser beam by the operation of the blocking unit 51 is performed.

如上所述,當所測量的反應室10、雷射發生單元50和光學單元70的任何一個的振動幅度大於或等於預設值時,控制器90向第一電機54c發送操作信號。 As described above, when the measured vibration amplitude of any of the reaction chamber 10, the laser generating unit 50, and the optical unit 70 is greater than or equal to a preset value, the controller 90 transmits an operation signal to the first motor 54c.

因而,由於第一電機54c驅動第一旋轉軸54b和第一反射板54a旋轉,因此通過入口52a引入殼體52的雷射光束能夠被阻擋而不會通過出口52b供應到反應室10中。 Thus, since the first motor 54c drives the first rotating shaft 54b and the first reflecting plate 54a to rotate, the laser beam introduced into the casing 52 through the inlet 52a can be blocked without being supplied into the reaction chamber 10 through the outlet 52b.

在測量平臺12的振動幅度的操作S140中,當確定平臺12的振動幅度大於或等於預設值時,執行控制平臺12補償振動的操作S160。 In operation S140 of measuring the vibration amplitude of the platform 12, when it is determined that the vibration amplitude of the platform 12 is greater than or equal to the preset value, the operation S160 of the control platform 12 compensating for vibration is performed.

在本發明的實施例中,由於平臺12是通過氣壓支撐的空氣平臺12,當平臺12的振動幅度大於或等於預設值時,氣壓被降低,使得傳導到平臺12的振動能夠通過使用氣壓的支撐單元得到補償。 In the embodiment of the present invention, since the platform 12 is an air platform 12 supported by air pressure, when the vibration amplitude of the platform 12 is greater than or equal to a preset value, the air pressure is lowered, so that the vibration transmitted to the platform 12 can pass the air pressure. The support unit is compensated.

因此,本發明可提供一種雷射處理裝置及其控制方法,該雷射處理裝置能夠僅對襯底的需要進行雷射處理的那部分選擇性地執行雷射處理,同時簡化用於雷射處理的襯底的對準(alignment)操作。 Accordingly, the present invention can provide a laser processing apparatus capable of selectively performing laser processing only on a portion of a substrate that needs to be subjected to laser processing while simplifying use for laser processing, and a control method thereof Alignment operation of the substrate.

雖然已經提供了一些實施例來說明本發明,但應該理解這些實施例僅為示意性方式,能夠構思不違背本發明的精神和範圍的各種變型和應用。進而,雖然已經給出了雷射處理裝置即控制雷射處理裝置的方法的示例,但它們僅僅是示意性的,且本發明可應用於其他產品。因此,本發明的範圍應該由所附申請專利範圍及其等同來限定。 While the invention has been described with respect to the embodiments of the present invention, it is understood that Further, although an example of a laser processing apparatus, that is, a method of controlling the laser processing apparatus, has been given, they are merely illustrative, and the present invention is applicable to other products. Therefore, the scope of the invention should be limited by the scope of the appended claims and their equivalents.

10‧‧‧反應室 10‧‧‧Reaction room

50‧‧‧雷射發生單元 50‧‧‧Laser generating unit

51‧‧‧阻擋單元 51‧‧‧Blocking unit

70‧‧‧光學單元 70‧‧‧ Optical unit

72‧‧‧支撐件 72‧‧‧Support

74‧‧‧主體 74‧‧‧ Subject

76‧‧‧通道 76‧‧‧ channel

78‧‧‧供應單元 78‧‧‧Supply unit

82‧‧‧第一振動檢測感測器 82‧‧‧First vibration detection sensor

84‧‧‧第二振動檢測感測器 84‧‧‧Second vibration detection sensor

Claims (4)

一種雷射處理裝置,包括:平臺,其被放置在反應室內,且在該平臺上放置襯底;真空單元,被提供給所述平臺以將氧氣從位於所述襯底與所述平臺之間的空間排放到所述反應室的外部;以及控制器,當所述襯底被放置在所述平臺上時,將操作信號發送到所述真空單元,使得依序從所述平臺的中心部向其週邊執行氧氣排放操作,其中,所述平臺包括:中心部,被設置為穿過所述平臺的中心將所述平臺分成兩個對稱部分;第一側部,鄰近所述中心部;第二側部,鄰近所述第一側部的外側;第三側部,鄰近所述第二側部的外側;以及多個交叉部,被設置為與所述第二側部交叉;當依續從所述第一側部、所述第二側部、及所述第三側部排放氧氣之後,所述控制器包含從與所述第二側部交叉的所述多個交叉部排放氧氣以從所述襯底與所述平臺之間移除氧氣的操作。 A laser processing apparatus comprising: a platform placed in a reaction chamber and having a substrate placed on the platform; a vacuum unit provided to the platform to transfer oxygen from between the substrate and the platform a space discharged to the outside of the reaction chamber; and a controller that, when the substrate is placed on the platform, transmits an operation signal to the vacuum unit such that the center portion of the platform is sequentially An oxygen discharge operation is performed at a periphery thereof, wherein the platform includes: a center portion configured to divide the platform into two symmetrical portions through a center of the platform; a first side portion adjacent to the center portion; a side portion adjacent to an outer side of the first side portion; a third side portion adjacent to an outer side of the second side portion; and a plurality of intersection portions disposed to intersect the second side portion; After the first side portion, the second side portion, and the third side portion emit oxygen, the controller includes discharging oxygen from the plurality of intersections intersecting the second side portion to Removing oxygen between the substrate and the platform Operation. 根據申請專利範圍1所述的雷射處理裝置,其中,所述真空單元包括:多個真空孔,被提供給所述平臺;以及真空泵,被連接到所述真空孔以將氧氣排放到所述反應室外部。 A laser processing apparatus according to claim 1, wherein the vacuum unit includes: a plurality of vacuum holes provided to the stage; and a vacuum pump connected to the vacuum holes to discharge oxygen to the Outside the reaction chamber. 根據申請專利範圍2所述的雷射處理裝置,其中,所述真空孔包括:第一真空孔,形成在所述中心部中;第二真空孔,形成在所述第一側部中;第三真空孔,形成在所述第二側部中;第四真空孔,形成在所述第三側部中;以及第五真空孔,形成在所述交叉部中。 The laser processing apparatus of claim 2, wherein the vacuum hole comprises: a first vacuum hole formed in the central portion; and a second vacuum hole formed in the first side portion; a three vacuum hole formed in the second side portion; a fourth vacuum hole formed in the third side portion; and a fifth vacuum hole formed in the intersection portion. 一種雷射處理裝置的控制方法,包括:當襯底放置在平臺上時,從放置在反應室內的所述平臺的中心部排放氧氣;當氧氣從所述平臺的所述中心部完全排放時,從鄰近所述平臺的所述中心部的第一側部排放氧氣; 當氧氣從所述第一側部完全排放時,從鄰近所述第一側部的外側的第二側部排放氧氣;當氧氣從所述第二側部完全排放時,從鄰近所述第二側部的外側的第三側部排放氧氣;以及當氧氣從所述第三側部完全排放時,從與所述第二側部交叉的交叉部排放氧氣以執行從所述襯底與所述平臺之間移除氧氣。 A method of controlling a laser processing apparatus, comprising: discharging oxygen from a central portion of the platform placed in a reaction chamber when a substrate is placed on a platform; when oxygen is completely discharged from the center portion of the platform, Oxygen is discharged from a first side adjacent the central portion of the platform; Oxygen is discharged from a second side adjacent to an outer side of the first side when oxygen is completely discharged from the first side; from adjacent to the second when oxygen is completely discharged from the second side The third side of the outer side of the side discharges oxygen; and when oxygen is completely exhausted from the third side, oxygen is discharged from the intersection intersecting the second side to perform from the substrate and the Oxygen is removed between the platforms.
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