TWI513041B - Light emitting diode package and light emitting diode module - Google Patents

Light emitting diode package and light emitting diode module Download PDF

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Publication number
TWI513041B
TWI513041B TW099125222A TW99125222A TWI513041B TW I513041 B TWI513041 B TW I513041B TW 099125222 A TW099125222 A TW 099125222A TW 99125222 A TW99125222 A TW 99125222A TW I513041 B TWI513041 B TW I513041B
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emitting diode
substrate
light emitting
package structure
diode package
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TW099125222A
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Chinese (zh)
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TW201205867A (en
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Shiun Wei Chan
Chih Hsun Ke
Hsing Fen Lo
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Advanced Optoelectronic Tech
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發光二極體封裝結構及發光二極體模組 Light-emitting diode package structure and light-emitting diode module

本發明涉及一種半導體發光元件,特別涉及一種發光二極體封裝結構及具有該發光二極體封裝結構的發光二極體模組。 The present invention relates to a semiconductor light emitting device, and more particularly to a light emitting diode package structure and a light emitting diode module having the light emitting diode package structure.

作為一種新興的光源,發光二極體憑藉其發光效率高、體積小、重量輕、環保等優點,已被廣泛地應用到當前的各個領域當中,大有取代傳統光源的趨勢。 As an emerging light source, the light-emitting diode has been widely used in various fields due to its high luminous efficiency, small size, light weight, environmental protection, etc., and has a tendency to replace the traditional light source.

目前業界通常採用表面黏貼技術(SMT)將封裝後的發光二極體設置在電路板等板材上,再應用到各個領域當中。表面黏貼加工時,會將錫膏設置在發光二極體與板材之間,利用錫膏將發光二極體焊固在板材上。然而,由於錫膏的設置,發光二極體在板材上容易產生浮高、歪斜或者爬錫等現象,不但影響表面黏貼加工的操作,還影響成品的外觀與性能。同時,在加熱錫膏時,錫膏內的助焊劑還會因受熱而在錫膏內產生孔洞或者空隙,使得錫膏的熱阻增大,影響發光二極體的散熱。 Currently, the surface mount technology (SMT) is generally used in the industry to place the packaged light-emitting diodes on boards such as circuit boards, and then applied to various fields. When the surface is pasted, the solder paste is placed between the light-emitting diode and the plate, and the light-emitting diode is soldered to the plate by solder paste. However, due to the setting of the solder paste, the light-emitting diode is prone to floating height, skew or creeping on the board, which not only affects the operation of the surface pasting process, but also affects the appearance and performance of the finished product. At the same time, when the solder paste is heated, the flux in the solder paste may also generate holes or voids in the solder paste due to heat, so that the thermal resistance of the solder paste is increased, which affects the heat dissipation of the light-emitting diode.

有鑒於此,有必要提供一種發光二極體封裝結構及發光二極體模組,該發光二極體封裝結構可更方便地被固定,並且具有較佳的熱傳導性。 In view of the above, it is necessary to provide a light emitting diode package structure and a light emitting diode module, which can be more conveniently fixed and have better thermal conductivity.

一種發光二極體封裝結構,包括一基板,設於基板的第一表面上的一發光二極體晶片,與發光二極體晶片電連接的二電極,及密封發光二極體晶片的封裝體,所述基板的一第二表面上設有至少一溝槽,所述溝槽用於在該發光二極體封裝結構被固定時以容納錫膏。 A light emitting diode package structure includes a substrate, a light emitting diode chip disposed on the first surface of the substrate, two electrodes electrically connected to the light emitting diode chip, and a package for sealing the light emitting diode chip And a second surface of the substrate is provided with at least one trench for receiving the solder paste when the LED package structure is fixed.

一種發光二極體模組,包括板材及設置在板材上的至少一發光二極體封裝結構,所述至少一發光二極體封裝結構包括一基板,設於基板的第一表面上的一發光二極體晶片,與發光二極體晶片電連接的二電極,及密封發光二極體晶片的封裝體,所述基板的一第二表面上設有至少一溝槽,且所述基板的第二表面貼設在所述板材上,所述發光二極體封裝結構藉由錫膏固定在該板體上,且所述基板的溝槽內容納有錫膏。 An LED module includes a plate and at least one LED package structure disposed on the plate, the at least one LED package structure comprising a substrate, and a light emitting on the first surface of the substrate a diode chip, a second electrode electrically connected to the light emitting diode chip, and a package for sealing the LED chip, wherein a second surface of the substrate is provided with at least one trench, and the substrate is The two surfaces are attached to the plate, and the LED package structure is fixed on the plate by solder paste, and the groove of the substrate is filled with solder paste.

與習知技術相比,本發明發光二極體封裝結構在其基板上開設溝槽,可增加基板表面積,以容納更多的錫膏,使發光二極體可緊密黏貼在板材上,避免發光二極體浮高、歪斜或爬錫等現象產生。溝槽還可使錫膏內的助焊劑受熱產生的氣體得以排出,避免氣體殘留於錫膏中產生空隙或孔洞,從而可降低熱阻,使發光二極體得到更好的散熱。 Compared with the prior art, the light-emitting diode package structure of the present invention has a groove on the substrate, which can increase the surface area of the substrate to accommodate more solder paste, so that the light-emitting diode can be closely adhered to the plate to avoid illuminating. The phenomenon of floating height, skew or creeping of the diode occurs. The trench can also discharge the gas generated by the flux in the solder paste to prevent the gas from remaining in the solder paste to generate voids or holes, thereby reducing the thermal resistance and allowing the light-emitting diode to be better dissipated.

10、11、12、13、14、15‧‧‧發光二極體封裝結構 10,11,12,13,14,15‧‧‧Light emitting diode package structure

20‧‧‧基板 20‧‧‧Substrate

201‧‧‧非導電物質 201‧‧‧ Non-conductive substances

21‧‧‧反射杯 21‧‧‧Reflection Cup

22‧‧‧溝槽 22‧‧‧ trench

24‧‧‧導電孔 24‧‧‧Electrical hole

241‧‧‧導電物質 241‧‧‧ conductive materials

25‧‧‧導熱孔 25‧‧‧thermal hole

251‧‧‧導熱物質 251‧‧‧ Thermal Conductive Materials

30‧‧‧發光二極體晶片 30‧‧‧Light Emitter Wafer

32‧‧‧螢光粉層 32‧‧‧Fluorescent powder layer

40‧‧‧電極 40‧‧‧Electrode

42‧‧‧金線 42‧‧‧ Gold wire

43‧‧‧金屬層 43‧‧‧metal layer

50‧‧‧封裝體 50‧‧‧Package

60‧‧‧基座 60‧‧‧Base

70‧‧‧板體 70‧‧‧ board

71‧‧‧錫膏 71‧‧‧ solder paste

圖1為本發明第一實施方式的發光二極體封裝結構的側視示意圖。 1 is a side elevational view showing a light emitting diode package structure according to a first embodiment of the present invention.

圖2為本發明第二實施方式的發光二極體封裝結構的剖視示意圖。 2 is a cross-sectional view showing a light emitting diode package structure according to a second embodiment of the present invention.

圖3為本發明第三實施方式的發光二極體封裝結構的剖視示意圖。 3 is a cross-sectional view showing a light emitting diode package structure according to a third embodiment of the present invention.

圖4為本發明第四實施方式的發光二極體封裝結構的剖視示意圖。 4 is a cross-sectional view showing a light emitting diode package structure according to a fourth embodiment of the present invention.

圖5為本發明第五實施方式的發光二極體封裝結構的俯視示意圖。 FIG. 5 is a schematic top plan view of a light emitting diode package structure according to a fifth embodiment of the present invention.

圖6為沿圖5中的VI-VI線的剖視示意圖。 Figure 6 is a cross-sectional view taken along line VI-VI of Figure 5.

圖7為本發明第六實施方式的發光二極體封裝結構的俯視示意圖。 FIG. 7 is a schematic top plan view of a light emitting diode package structure according to a sixth embodiment of the present invention.

圖8為沿圖7中的VIII-VIII線的剖視示意圖。 Figure 8 is a schematic cross-sectional view taken along line VIII-VIII of Figure 7.

圖9為本發明第七實施方式的發光二極體封裝結構的剖視示意圖。 9 is a cross-sectional view showing a light emitting diode package structure according to a seventh embodiment of the present invention.

圖10和圖11為本發明發光二極體封裝結構中的基板於不同實施方式中的仰視示意圖。 10 and FIG. 11 are schematic bottom views of a substrate in a light emitting diode package structure according to various embodiments of the present invention.

圖12為本發明一實施方式的發光二極體模組的剖示示意圖。 FIG. 12 is a schematic cross-sectional view showing a light emitting diode module according to an embodiment of the present invention.

圖1為本發明第一實施方式的發光二極體封裝結構10的側視示意圖。該發光二極體封裝結構10包括一基板20,設於基板20的一表面上的一發光二極體晶片30,與發光二極體晶片30電連接的二電極40,及密封發光二極體晶片30的封裝體50,基板20的另一表面上設有至少一溝槽22。 1 is a side elevational view of a light emitting diode package structure 10 according to a first embodiment of the present invention. The LED package structure 10 includes a substrate 20, a light emitting diode chip 30 disposed on a surface of the substrate 20, two electrodes 40 electrically connected to the LED chip 30, and a sealed LED. The package 50 of the wafer 30 is provided with at least one trench 22 on the other surface of the substrate 20.

基板20可由塑膠、陶瓷等非導電物質製成。基板20可呈矩形、圓 形或者多邊形等形狀,本實施方式中為一矩形塊狀。發光二極體晶片30設於基板20的一第一表面上,例如,可以是頂表面。 The substrate 20 may be made of a non-conductive material such as plastic or ceramic. The substrate 20 can be rectangular or round The shape such as a shape or a polygon is a rectangular block shape in this embodiment. The LED wafer 30 is disposed on a first surface of the substrate 20, and may be, for example, a top surface.

發光二極體晶片30透過二金線42與二電極40電連接。發光二極體晶片30可以是正裝、倒裝等形式,還可以是垂直式的發光二極體晶片。本實施方式中的發光二極體晶片30為正裝。 The LED chip 30 is electrically connected to the two electrodes 40 through the two gold wires 42. The LED wafer 30 can be in the form of a dress, a flip, or the like, and can also be a vertical LED chip. The light-emitting diode wafer 30 in the present embodiment is a formal wear.

本實施方式中的溝槽22為多個並呈直線形,且開設在基板20的一第二表面上,例如是底表面,當然不排除可以是其他的表面。溝槽22的截面可以是矩形、圓弧形、多邊形等任意的幾何形狀。由於溝槽22的設置,可增加基板20的表面積,以容納更多的錫膏,發光二極體封裝結構10被固定時,可避免浮高、歪斜或爬錫等現象產生。進一步的,溝槽22還可使錫膏內的助焊劑受熱時產生的氣體得以排出,避免氣體殘留於錫膏中產生空隙或孔洞,從而可降低熱阻,使發光二極體封裝結構10具有更佳的散熱性能。優選的,溝槽22與基板20的邊沿連通,如此可使溝槽22具有更佳的排出氣體的功效,使錫膏的熱阻降低。優選的,溝槽22的深度為基板20的厚度的1/5-1/2,如此設置溝槽22的深度,既不會使基板20的強度太差,又不會使容錫的空間太小。另外,還可於溝槽22的表面上全鍍或者部分鍍上金屬,以使錫膏易於沾黏,達到吃錫的目的。 The grooves 22 in the present embodiment are plural and linear, and are formed on a second surface of the substrate 20, for example, a bottom surface. Of course, other surfaces may be excluded. The cross section of the groove 22 may be any geometric shape such as a rectangle, a circular arc, or a polygon. Due to the arrangement of the trenches 22, the surface area of the substrate 20 can be increased to accommodate more solder paste. When the light-emitting diode package structure 10 is fixed, phenomena such as floating height, skew or creeping can be avoided. Further, the trench 22 can also discharge the gas generated when the flux in the solder paste is heated, thereby preventing the gas from remaining in the solder paste to generate voids or holes, thereby reducing the thermal resistance, so that the light emitting diode package structure 10 has Better heat dissipation. Preferably, the trench 22 is in communication with the edge of the substrate 20 such that the trench 22 has a better exhaust gas effect and reduces the thermal resistance of the solder paste. Preferably, the depth of the trench 22 is 1/5-1/2 of the thickness of the substrate 20, and the depth of the trench 22 is set so as not to make the strength of the substrate 20 too poor, and the space for the tin can not be too large. small. In addition, the surface of the trench 22 may be fully plated or partially plated with metal to make the solder paste easy to adhere to the purpose of eating tin.

封裝體50可以是各種樹脂或者玻璃等透明材料。封裝體50的形狀可為球形、橢球形或者方形塊狀等。 The package 50 may be a transparent material such as various resins or glass. The shape of the package 50 may be a spherical shape, an ellipsoidal shape, a square block shape or the like.

請參考圖2,本發明第二實施方式的發光二極體封裝結構11的基板20上還開設有若干導電孔24和導熱孔25,導電孔24和導熱孔25分別貫穿基板20的頂表面和底表面,且導電孔24和導熱孔25內分 別設有導電物質241和導熱物質251,例如可以是金屬。其中,導電孔24內的導電物質241分別與二電極40電連接,從而為發光二極體晶片30提供更多的導電路徑。導熱孔25內的導熱物質251比基板20的導熱性能更好,這些導熱物質251與基板20上的金屬層43熱連接,並可將發光二極體晶片30產生的熱傳導至基板20的底部進行散發,可提高散熱性能。優選的,對應發光二極體晶片30的位置開設的導熱孔25更大,從而更有利於發光二極體晶片30的散熱。導電孔24、導熱孔25可為圓孔、方孔、長條孔或方塊孔,導電孔24、導熱孔25的截面可為矩形、梯形等多種形狀。 Referring to FIG. 2, the substrate 20 of the LED package 11 of the second embodiment of the present invention is further provided with a plurality of conductive holes 24 and heat conducting holes 25, and the conductive holes 24 and the heat conducting holes 25 respectively penetrate the top surface of the substrate 20 and a bottom surface, and the conductive hole 24 and the heat conductive hole 25 are divided A conductive material 241 and a heat conductive material 251 are provided, and may be, for example, a metal. The conductive materials 241 in the conductive holes 24 are electrically connected to the two electrodes 40, respectively, thereby providing more conductive paths for the LEDs 30. The heat conductive material 251 in the heat conduction hole 25 is better than the heat conductivity of the substrate 20. The heat conductive material 251 is thermally connected to the metal layer 43 on the substrate 20, and the heat generated by the light emitting diode chip 30 can be conducted to the bottom of the substrate 20. Dissipated to improve heat dissipation. Preferably, the heat conducting hole 25 corresponding to the position of the light emitting diode chip 30 is larger, thereby facilitating heat dissipation of the light emitting diode chip 30. The conductive hole 24 and the heat conducting hole 25 may be a circular hole, a square hole, a long hole or a square hole. The conductive hole 24 and the heat conductive hole 25 may have a plurality of shapes such as a rectangle or a trapezoid.

上述實施方式中的溝槽22均是在基板20上加工而成,當然本發明中的溝槽22並不限於此種實施方式。請參考圖3,本發明第三實施方式中的基板20由呈片狀的且高度不一的導電物質241、導熱物質251(例如是金屬)和非導電物質201(例如是陶瓷、塑膠等)交替夾設而成。其中,導電物質241、導熱物質251的高度比非導電物質201的高度大,當導電物質241、導熱物質251與非導電物質201的頂端對齊時,底端就因為高低差,而在相鄰二導電物質241、導熱物質251之間形成溝槽22。 The grooves 22 in the above embodiment are all processed on the substrate 20. Of course, the grooves 22 in the present invention are not limited to such an embodiment. Referring to FIG. 3 , the substrate 20 in the third embodiment of the present invention comprises a conductive material 241 having a sheet shape and a different height, a heat conductive material 251 (for example, metal), and a non-conductive material 201 (for example, ceramics, plastic, etc.). Alternately sandwiched. The height of the conductive material 241 and the heat conductive material 251 is larger than the height of the non-conductive material 201. When the conductive material 241 and the heat conductive material 251 are aligned with the top end of the non-conductive material 201, the bottom end is adjacent to the height difference. A groove 22 is formed between the conductive material 241 and the heat conductive material 251.

圖4所示為本發明第四實施方式的發光二極體封裝結構12。該發光二極體封裝結構12的基板20的頂表面上還設有一反射杯21,該封裝體50容置在該反射杯21內,而發光二極體晶片30則置於反射杯21的底部。反射杯21可與基板20一體成型。反射杯21的內反射面與基板20的頂表面之間的夾角在90-130度之間。 FIG. 4 shows a light emitting diode package structure 12 according to a fourth embodiment of the present invention. A reflective cup 21 is further disposed on the top surface of the substrate 20 of the LED package 12, the package 50 is received in the reflective cup 21, and the LED wafer 30 is placed at the bottom of the reflective cup 21. . The reflective cup 21 can be integrally formed with the substrate 20. The angle between the inner reflecting surface of the reflecting cup 21 and the top surface of the substrate 20 is between 90 and 130 degrees.

請參考圖5和圖6,本發明第五實施方式的發光二極體封裝結構13內的發光二極體晶片30為垂直型發光二極體晶片,其底部透過一 電極40與外部形成電連接,而其頂部透過金線42與另一電極40連接後再與外部形成電連接。基板20上開設有多個導電孔24和多個導熱孔25。導電孔24和導熱孔25內分別填充導電物質和導熱物質。其中,分佈在發光二極體晶片30周圍的導熱孔25更多,也即靠近發光二極體晶片30的區域內的導熱孔25的密度比遠離發光二極體晶片30的區域內的導熱孔25的密度大,此設計目的在於使集中在靠近發光二極體晶片30的區域內的熱量更加快速的散發。 Referring to FIG. 5 and FIG. 6, the LED array 30 in the LED package structure 13 of the fifth embodiment of the present invention is a vertical LED chip, and the bottom portion thereof is transparent. The electrode 40 is electrically connected to the outside, and the top thereof is connected to the other electrode 40 through the gold wire 42 and then electrically connected to the outside. A plurality of conductive holes 24 and a plurality of heat conduction holes 25 are formed in the substrate 20. The conductive holes 24 and the heat conductive holes 25 are filled with a conductive substance and a heat conductive substance, respectively. Wherein, the heat conducting holes 25 distributed around the light emitting diode chip 30 are more, that is, the heat conducting holes 25 in the region close to the light emitting diode chip 30 are denser than the heat conducting holes in the region away from the light emitting diode chip 30. The density of 25 is large, and the design is intended to dissipate heat concentrated in an area close to the light-emitting diode wafer 30 more quickly.

請參考圖7和圖8,本發明第六實施方式的發光二極體封裝結構14內的發光二極體晶片30為倒裝形式,也即覆晶式發光二極體晶片,其透過二電極40與外部形成電連接。基板20內的一導熱孔25為方塊孔,其截面呈梯形。 Referring to FIG. 7 and FIG. 8 , the LED array 30 in the LED package structure 14 of the sixth embodiment of the present invention is in a flip-chip form, that is, a flip-chip LED chip, which transmits the two electrodes. 40 forms an electrical connection with the outside. A heat conducting hole 25 in the substrate 20 is a square hole having a trapezoidal cross section.

圖9所示為本發明第七實施方式的發光二極體封裝結構15,該發光二極體封裝結構15包括一大致呈圓柱狀的基板20,設於基板20的頂表面上的一發光二極體晶片30,與發光二極體晶片30電連接的二電極40,及密封發光二極體晶片30的封裝體50,基板20的底表面上設有至少一溝槽22。基板20由高導熱性能材料製成,發光二極體晶片30產生的熱量可透過此基板20傳遞出去。在封裝體50內於發光二極體晶片30周圍還包覆一層螢光粉層32,該螢光粉層32內的螢光粉可以是例如石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉和氮化物基螢光粉。此外,基板20周圍還圍設一基座60,電極40延伸至基座60外並與基板20的底表面平齊。 FIG. 9 shows a light emitting diode package structure 15 according to a seventh embodiment of the present invention. The light emitting diode package structure 15 includes a substantially cylindrical substrate 20, and a light emitting diode disposed on the top surface of the substrate 20. The polar body wafer 30, the two electrodes 40 electrically connected to the light emitting diode chip 30, and the package body 50 for sealing the light emitting diode chip 30 are provided with at least one trench 22 on the bottom surface of the substrate 20. The substrate 20 is made of a material having high thermal conductivity, and heat generated by the LED chip 30 can be transmitted through the substrate 20. A phosphor layer 32 is further coated around the LED array 30 in the package 50. The phosphor powder in the phosphor layer 32 may be, for example, garnet-based phosphor powder or citrate-based phosphor. Powder, orthosilicate-based phosphor powder, sulfide-based phosphor powder, thiogallate-based phosphor powder, and nitride-based phosphor powder. In addition, a susceptor 60 is also disposed around the substrate 20, and the electrode 40 extends outside the susceptor 60 and is flush with the bottom surface of the substrate 20.

圖10、圖11所示為不同實施方式中基板20上開設的不同形態的溝槽22。其中,圖10中所示的溝槽22為曲線形,圖11中所示的溝槽 22為網狀。 10 and 11 show different shapes of trenches 22 formed in the substrate 20 in different embodiments. Wherein, the trench 22 shown in FIG. 10 is curved, and the trench shown in FIG. 22 is a mesh.

請再參考圖12,本發明一發光二極體模組包括一板體70及置於板體70上的一發光二極體封裝結構,該實施方式中的發光二極體封裝結構即為上述第七實施方式中的發光二極體封裝結構15,且開設有溝槽22的一面與板體70貼設。當然可以理解地,該發光二極體封裝結構可以為上述任一實施方式中的一個,而且不同實施方式中的不同特徵還可合理地進行組合、搭配,例如,在同一實施方式中,溝槽22可由上述第一、第三實施方式中的不同形式形成。另外,還可使上述不同實施方式中的發光二極體封裝結構共同置於同一板體70上。該板體70可以是電路板等板材,當發光二極體封裝結構借由錫膏71固定在該板體70上時,由於發光二極體封裝結構的基板20上開設有溝槽22,可容納過多的錫膏71,使發光二極體封裝結構緊密黏貼在板體70上,並避免發光二極體封裝結構產生浮高、歪斜或爬錫等現象的產生。優選的,至少一溝槽22與基板20的邊沿連通,如此可使溝槽22具有更佳的排出氣體的功效,使錫膏71內的助焊劑受熱時產生的氣體得以排出,避免氣體殘留於錫膏71中產生空隙或孔洞,從而降低錫膏71的熱阻。 Referring to FIG. 12, a light emitting diode module of the present invention includes a board body 70 and a light emitting diode package structure disposed on the board body 70. The light emitting diode package structure in the embodiment is the above In the light-emitting diode package structure 15 of the seventh embodiment, one surface on which the trench 22 is opened is attached to the board body 70. Of course, it can be understood that the LED package structure can be one of the above embodiments, and different features in different embodiments can be combined and matched reasonably. For example, in the same embodiment, the trench 22 may be formed in different forms in the first and third embodiments described above. In addition, the light emitting diode package structures in the different embodiments described above may be collectively placed on the same board body 70. The board body 70 may be a board such as a circuit board. When the light emitting diode package structure is fixed on the board body 70 by the solder paste 71, the substrate 20 of the light emitting diode package structure is provided with a trench 22. The excess solder paste 71 is accommodated, so that the light-emitting diode package structure is closely adhered to the board body 70, and the phenomenon that the light-emitting diode package structure generates floating height, skew or creeping is prevented. Preferably, at least one of the trenches 22 is in communication with the edge of the substrate 20, so that the trench 22 has a better effect of exhausting gas, so that the gas generated when the flux in the solder paste 71 is heated is discharged, thereby preventing gas from remaining in the gas. A void or a hole is formed in the solder paste 71, thereby reducing the thermal resistance of the solder paste 71.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

11‧‧‧發光二極體封裝結構 11‧‧‧Light emitting diode package structure

20‧‧‧基板 20‧‧‧Substrate

22‧‧‧溝槽 22‧‧‧ trench

24‧‧‧導電孔 24‧‧‧Electrical hole

241‧‧‧導電物質 241‧‧‧ conductive materials

25‧‧‧導熱孔 25‧‧‧thermal hole

251‧‧‧導熱物質 251‧‧‧ Thermal Conductive Materials

30‧‧‧發光二極體晶片 30‧‧‧Light Emitter Wafer

40‧‧‧電極 40‧‧‧Electrode

43‧‧‧金屬層 43‧‧‧metal layer

50‧‧‧封裝體 50‧‧‧Package

Claims (10)

一種發光二極體封裝結構,包括一基板,設於基板的第一表面上的一發光二極體晶片,與發光二極體晶片電連接的二電極,及密封發光二極體晶片的封裝體,其改良在於:所述基板的一第二表面上設有至少一溝槽,所述溝槽增加了基板的第二表面的表面積,所述溝槽未貫穿基板的第一表面和第二表面,所述溝槽用於在該發光二極體封裝結構被固定時以容納錫膏。 A light emitting diode package structure includes a substrate, a light emitting diode chip disposed on the first surface of the substrate, two electrodes electrically connected to the light emitting diode chip, and a package for sealing the light emitting diode chip The improvement is that: a second surface of the substrate is provided with at least one groove, the groove increases a surface area of the second surface of the substrate, the groove does not penetrate the first surface and the second surface of the substrate The trench is used to accommodate the solder paste when the light emitting diode package structure is fixed. 如申請專利範圍第1項所述之發光二極體封裝結構,其中所述至少一溝槽與基板的邊沿連通。 The light emitting diode package structure of claim 1, wherein the at least one trench communicates with an edge of the substrate. 如申請專利範圍第1項所述之發光二極體封裝結構,其中所述至少一溝槽呈曲線形、直線形或者網狀。 The light emitting diode package structure according to claim 1, wherein the at least one trench has a curved shape, a linear shape or a mesh shape. 如申請專利範圍第1項所述之發光二極體封裝結構,其中所述至少一溝槽的至少部分表面上鍍有金屬。 The light emitting diode package structure of claim 1, wherein at least part of the surface of the at least one trench is plated with a metal. 如申請專利範圍第1項所述之發光二極體封裝結構,其中所述基板上設有貫穿第一表面與第二表面的導電孔和導熱孔,導電孔和導熱孔內分別填充導電物質和導熱物質。 The light emitting diode package structure of claim 1, wherein the substrate is provided with a conductive hole and a heat conducting hole penetrating the first surface and the second surface, and the conductive hole and the heat conducting hole are respectively filled with a conductive substance and Thermally conductive material. 如申請專利範圍第5項所述之發光二極體封裝結構,其中所述基板上靠近發光二極體晶片的區域內的導熱孔的密度比遠離發光二極體晶片的區域內的導熱孔的密度大。 The light-emitting diode package structure of claim 5, wherein a density of the heat-conducting holes in the region of the substrate near the light-emitting diode wafer is higher than that of the heat-radiating hole in the region away from the light-emitting diode chip. High density. 如申請專利範圍第1項所述之發光二極體封裝結構,其中所述至少一溝槽的深度為基板的厚度的1/5-1/2。 The light emitting diode package structure of claim 1, wherein the at least one trench has a depth of 1/5 to 1/2 of a thickness of the substrate. 如申請專利範圍第1項所述之發光二極體封裝結構,還包括一基座,所述基座圍設在基板周圍,所述電極延伸至基座外並與基板的第二表面平齊 。 The illuminating diode package structure of claim 1, further comprising a pedestal surrounding the substrate, the electrode extending outside the pedestal and flush with the second surface of the substrate . 如申請專利範圍第1項所述之發光二極體封裝結構,其中所述基板包括交替設置的、高度不一的非導電物質、導電物質和導熱物質,且非導電物質、導電物質和導熱物質的高度差形成所述至少一溝槽。 The light emitting diode package structure according to claim 1, wherein the substrate comprises alternating non-conductive materials, conductive materials and heat conductive materials, and non-conductive materials, conductive materials and heat conductive materials. The height difference forms the at least one trench. 一種發光二極體模組,包括板材及設置在板材上的至少一發光二極體封裝結構,其改良在於:所述至少一發光二極體封裝結構為申請專利範圍第1-9項中任意一項所述的發光二極體封裝結構,且所述基板的第二表面貼設在所述板材上,所述發光二極體封裝結構藉由錫膏固定在該板體上,且所述基板的溝槽內容納有錫膏。 A light-emitting diode module comprising: a plate material and at least one light-emitting diode package structure disposed on the plate material, wherein the at least one light-emitting diode package structure is any one of the claims 1-9 The light emitting diode package structure, wherein a second surface of the substrate is attached to the board, the LED package structure is fixed on the board by solder paste, and The trench of the substrate contains a solder paste.
TW099125222A 2010-07-30 2010-07-30 Light emitting diode package and light emitting diode module TWI513041B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI244705B (en) * 2003-10-14 2005-12-01 Yu-Nung Shen Light-emitting diode chip package body and packaging method thereof
US20060220036A1 (en) * 2005-03-30 2006-10-05 Samsung Electro-Mechanics Co., Ltd. LED package using Si substrate and fabricating method thereof
TWM301407U (en) * 2006-03-10 2006-11-21 Yun Dai Heat sink structure of light emitting diode
TW200739969A (en) * 2006-03-09 2007-10-16 Samsung Electro Mech Light emitting diode package
TWM376912U (en) * 2009-11-26 2010-03-21 Forward Electronics Co Ltd LED packaging structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI244705B (en) * 2003-10-14 2005-12-01 Yu-Nung Shen Light-emitting diode chip package body and packaging method thereof
US20060220036A1 (en) * 2005-03-30 2006-10-05 Samsung Electro-Mechanics Co., Ltd. LED package using Si substrate and fabricating method thereof
TW200739969A (en) * 2006-03-09 2007-10-16 Samsung Electro Mech Light emitting diode package
TWM301407U (en) * 2006-03-10 2006-11-21 Yun Dai Heat sink structure of light emitting diode
TWM376912U (en) * 2009-11-26 2010-03-21 Forward Electronics Co Ltd LED packaging structure

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