TWI512927B - 具有晶圓級封裝之自對準結構的半導體裝置與其製造方法 - Google Patents
具有晶圓級封裝之自對準結構的半導體裝置與其製造方法 Download PDFInfo
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- TWI512927B TWI512927B TW102146971A TW102146971A TWI512927B TW I512927 B TWI512927 B TW I512927B TW 102146971 A TW102146971 A TW 102146971A TW 102146971 A TW102146971 A TW 102146971A TW I512927 B TWI512927 B TW I512927B
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- Prior art keywords
- copper
- metal
- support structure
- layer
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 160
- 239000002184 metal Substances 0.000 claims description 160
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 117
- 239000010949 copper Substances 0.000 claims description 95
- 229910052802 copper Inorganic materials 0.000 claims description 94
- 238000002161 passivation Methods 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 55
- 229920000642 polymer Polymers 0.000 claims description 42
- 239000004020 conductor Substances 0.000 claims description 38
- 238000009413 insulation Methods 0.000 claims description 23
- 238000005538 encapsulation Methods 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 238000001721 transfer moulding Methods 0.000 claims description 5
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 84
- 238000000034 method Methods 0.000 description 19
- 239000011241 protective layer Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 229920002577 polybenzoxazole Polymers 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Description
本揭露係有關於一種晶圓級封裝(Wafer-Level Packaging;WLP)結構,且特別是指一種具有晶圓級封裝之自對準結構的半導體裝置與其製造方法。
晶圓級封裝係在晶圓上封裝積體電路,其實質上是一種真實的晶片尺寸封裝(Chip Scale Package;CSP)技術,此係因為所得之封裝實際上是晶粒(Die)的大小。一般來說,形成具有位於凸塊和重分佈線(Redistribution Line;RDL)間之凸塊底層金屬(Under Bump Metallurgy;UBM)的被封裝的半導體裝置需要進行三或四道光學微影層級的光罩,而具有較高的製作成本。一種不含位於凸塊和重分佈線間之UBM的被封裝的半導體裝置可降低製作成本,此係因為製造此無UBM之被封裝的半導體裝置只需要進行二道光學微影等級的光罩。然而,在無UBM之被封裝的半導體裝置中,凸塊(銲錫球)係直接安置在重分佈線上,因而在植球製程中極可能會引起銲錫球移位的問題。此銲錫球移位的問題造成一傾斜的印刷電路板安置於凸塊上,
且降低此裝置之電路板層次之溫度循環(Temperature Cycling;TC)的性能,因此導致低良率的植球製程。
因此,本揭露之態樣是在提供一種的半導體裝置與其製造方法,藉由提供銅支持結構以支撐導體凸塊,以避免銲錫球移位的問題,而增加植球製程之良率。
根據本揭露之上述目的,提出一種半導體裝置,其包含:半導體基材、金屬墊、聚合物絕緣層、含銅結構和導體凸塊。金屬墊係位於半導體基材上。聚合物絕緣層係位於半導體基材上並暴露出部分的金屬墊。含銅結構係位於聚合物絕緣層上,並包含有支持結構與後鈍化內連線(Post-Passivation Interconnect Line;PPI Line)。支持結構具有開口,而後鈍化內連線係部分地位於支持結構內並延伸穿過上述之開口。支持結構之頂端的所在位置高於後鈍化內連線之頂端的所在位置。導體凸塊係被支持結構所支撐。
依據本揭露之一實施例,上述之半導體裝置更包含有金屬座。此金屬座係位於半導體基材上,聚合物絕緣層係位於金屬座上,而支持結構係與金屬座對準。
依據本揭露之又一實施例,上述之支持結構為銅環,而金屬座為金屬環。
依據本揭露之又一實施例,上述之支持結構與後鈍化內連線具有實質相同的厚度,金屬座與金屬墊具有實質相同的厚度。
依據本揭露之又一實施例,上述之支持結構包含至少三個銅塊以定義出一平面,金屬座包含對應至此些銅塊之至少三個金屬塊。
依據本揭露之又一實施例,上述之後鈍化內連線為電性連接至部分之金屬墊的重分佈線。
依據本揭露之又一實施例,上述之支持結構與該後鈍化內連線相距有一距離。
依據本揭露之又一實施例,上述之距離為介於約10μm至約20μm之間。
依據本揭露之又一實施例,上述之支持結構之頂端的所在位置是藉由金屬墊之厚度而高於後鈍化內連線之頂端的所在位置。
依據本揭露之又一實施例,上述之半導體裝置更包含有封裝層。此封裝層封裝含銅結構與部分的導體凸塊,並包含液態模封化合物(Liquid Molding Compound)或移轉成型化合物(Transfer Molding Compound)。
根據本揭露之上述目的,另提出一種半導體裝置,其包含:半導體基材、金屬墊、金屬座、聚合物絕緣層、含銅結構及導體凸塊。金屬墊和金屬座係位於半導體基材上。聚合物絕緣層係位於金屬座與半導體基材上,並暴露出部分的金屬墊。含銅結構係位於聚合物絕緣層上,並包含有支持結構與後鈍化內連線。支持結構與金屬座對準並具有開口,金屬座與金屬墊具有實質相同的寬度。後鈍化內連線係部分地位於支持結構內並延伸穿過開口,支持結
構之頂端的所在位置高於後鈍化內連線之頂端的所在位置。導體凸塊係被支持結構所支撐。
依據本揭露之一實施例,上述之支持結構為銅環,而金屬座為鋁環。
依據本揭露之另一實施例,上述之支持結構包含至少三個銅塊以定義出一平面,金屬座包含對應至此些銅塊之至少三個鋁塊。
依據本揭露之又一實施例,上述之後鈍化內連線為電性連接至此些部分的金屬墊之重分佈線。
依據本揭露之再一實施例,上述之支持結構與後鈍化內連線相距一距離。
依據本揭露之再一實施例,上述之金屬座與支持結構之寬度是介於約5μm至約20μm之間。
根據本揭露之上述目的,再提出一種半導體裝置的製造方法,其包含:沉積金屬層於半導體基材上;圖案化金屬層以形成金屬墊與金屬座於半導體基材上;形成聚合物絕緣層於半導體基材、金屬墊與金屬座上;形成穿過聚合物絕緣層之第一開口,以暴露出部分的金屬墊;沉積含銅層於聚合物絕緣層上;圖案化含銅層以形成支持結構,其中此支持結構具有第二開口及延伸穿過第二開口之後鈍化內連線;以及形成導體凸塊於支持結構上。
依據本揭露之再一實施例,上述之半導體的製造方法,更包含:形成封裝層,以封裝後鈍化內連線、支持結構以及部分的導體凸塊。
100‧‧‧封裝結構
110‧‧‧半導體基材
122‧‧‧金屬座
122a‧‧‧金屬環
122b‧‧‧金屬塊
130‧‧‧保護層
140‧‧‧聚合物絕緣層
150‧‧‧含銅結構
152‧‧‧支持結構
152a‧‧‧銅環
152b‧‧‧銅塊
154‧‧‧後鈍化內連線
160‧‧‧封裝層
170‧‧‧導體凸塊
200‧‧‧封裝結構
210‧‧‧半導體基材
222‧‧‧金屬座
222a‧‧‧金屬環
222b‧‧‧金屬塊
224‧‧‧金屬墊
230‧‧‧保護層
240‧‧‧聚合物絕緣層
250‧‧‧含銅結構
252‧‧‧支持結構
252a‧‧‧銅環
252b‧‧‧銅塊
254‧‧‧後鈍化內連線
254a‧‧‧第一部分
254b‧‧‧第二部分
260‧‧‧封裝層
270‧‧‧導體凸塊
310‧‧‧半導體基材
320‧‧‧金屬層
322‧‧‧金屬座
324‧‧‧金屬墊
330‧‧‧保護層
340‧‧‧聚合物絕緣層
342‧‧‧第一開口
350‧‧‧含銅層
352‧‧‧支持結構
354a‧‧‧第一部分
354b‧‧‧第二部分
360‧‧‧封裝層
370‧‧‧導體凸塊
410‧‧‧沉積金屬層於半導體基材上
420‧‧‧圖案化金屬層以形成金屬墊與金屬座
430‧‧‧形成聚合物絕緣層
440‧‧‧形成第一開口以暴露出金屬墊
450‧‧‧沉積含銅層於聚合物絕緣層上
460‧‧‧圖案化含銅層以形成支持結構與後鈍化內連線
470‧‧‧形成導體凸塊於支持結構上
480‧‧‧形成封裝層
r1‧‧‧內俓
d1‧‧‧距離
w1‧‧‧寬度
w2‧‧‧寬度
為對本實施例及其優點有更完全的了解,請配合相對應之圖示以參見以下之說明,其中:第1A圖係繪示各種實施例之封裝結構的剖面示意圖。
第1B圖係繪示如第1A圖所示之例示含銅結構的俯視示意圖。
第1C圖係繪示如第1A圖所示之例示金屬座的俯視示意圖。
第1D圖係繪示如第1A圖所示又一例示含銅結構的俯視示意圖。
第1E圖係繪示如第1A圖所示又一例示金屬座的俯視示意圖。
第2A圖係繪示一些實施例之封裝結構的剖面示意圖。
第2B圖係繪示如第2A圖所示之例示含銅結構的俯視示意圖。
第2C圖係繪示如第2A圖所示之例示金屬座的俯視示意圖。
第2D圖係繪示如第2A圖所示之又一例示含銅結構的俯視示意圖。
第2E圖係繪示如第2A圖所示之又一例示金屬座的俯視示意圖。
第3A圖至第3G圖係繪示依據一些實施例用以說明封裝結構之製造方法之中間階段的剖面示意圖。
第4圖係繪示各種實施例之封裝結構之製造方法的流程圖。
以下詳細討論本揭露之實施例的製造與使用。然
而,應該理解的是,本揭露提供許多可被應用的概念,這些概念能具體實施於多種特定內容中。所討論之特定實施例僅為特定形式的說明,以製造與使用本揭露的主體內容(Subject Matter),並非要限制不同實施例之範圍。本揭露可重複元件參考符號和/或字母於各種例子中。此重複是為了簡化和清楚之目的,而不在其中指定各種實施例和或所討論之配置間的關係。當一材料層被稱為在另一材料層上或位於一基材“上”時,其可直接位在此另一材料層或此基材上,或可存在介於其間之材料層。在整個本揭露中,“銅柱(Copper(Cu)Post)”的用語係指銅突出物、銅柱狀物(Pillar)、厚銅墊和/或含銅突出物。如整個本揭露所使用,“銅”或“含銅”的用語意圖包含實質上純的元素銅、含有不可避免之雜質的銅,以及含有少量之元素(例如:鉭、銦、鈦、鋅、錳、鉻、鈦、鍺、鍶、鉑、鎂、鋁或鋯等)的銅合金。
本揭露之實施例主要是提供銅支持結構以支撐導體凸塊。導體凸塊可被穩固地支撐在支持結構上,因而避免銲錫球移位的問題,以增加植球製程的良率,並加強裝置(例如:低製作成本的無UBM之被封裝的半導體裝置)之電路板層次的溫度循環性能。然而,本揭露之實施例也可應用於其他型式之被封裝的半導體裝置,例如:具有UBM和/或銅突出物之被封裝的半導體裝置。在一些實施例中,銅支持結構與重分佈線係於相同的光罩中形成,並藉由一金屬墊而突起,此金屬墊係於形成金屬座的相同光罩中形
成。由於不需要額外的光罩來建構成此銅支持結構,故不會明顯地增加製作成本。
第1A圖係繪示各種實施例之封裝結構的剖面示意圖。如第1A圖所示,封裝結構100包含半導體基材110、金屬座122、聚合物絕緣層140、含銅結構150、封裝層160及導體凸塊170。半導體基材110被定義為包含半導體材料之任何結構,包含但不受限於主體矽基材(Bulk Silicon)、半導體晶圓、絕緣體上矽(Silicon-On-Insulator;SOI)基材或矽鍺基材。亦可使用包含III族、IV族和V族元素之其他半導體材料。在一些實施例中,金屬座122包含鋁、銅、銀、金、鎳、鎢、其合金,和/或這些材料的多層結構。保護層130(Passivation Layer;例如:氮化矽或二氧化矽)可位於半導體基材110與金屬座122上,因而提高位於金屬座122上之部分保護層130。
聚合物絕緣層140亦位於保護層130上,故位於保護層130之被提高部分上的部份聚合物絕緣層140亦被提高。在一些實施例中,第一聚合物絕緣層140包含環氧樹脂、聚亞醯胺、苯并環丁烯(benzocyclobutene;BCB)、聚苯噁唑(polybenzoxazole;PBO)或類似物。含銅結構150係被沉積於聚合物絕緣層140上。含銅結構150包含支持結構152與後鈍化內連線154,後鈍化內連線154亦可作用為電源線、重分佈線、電感、電容或任何被動元件。後鈍化內連線154係部分地位於支持結構150內。換言之,後鈍化內連線154之一部分係被支持結構150所包圍。導體凸
塊170(如錫/鉛或錫/銀凸塊)係位於後鈍化內連線154上,並被支持結構152所承載。封裝層160封裝住含銅結構150與部分的導體凸塊170。在一些實施例中,封裝層160包含液態模封化合物或移轉成型化合物。
支持結構152係位於聚合物絕緣層140的突起(被提高)部分上,並與金屬座122對準。支持結構152藉由金屬座122而使其所在位置高於後鈍化內連線154約金屬座122之厚度。支持結構152與後鈍化內連線154具有約相同之厚度。然而,在一些實施例中,當無金屬座122位於下方時,支持結構152之厚度可大於後鈍化內連線154之厚度。換言之,只要支持結構152之頂端的所在位置足夠高於後鈍化內連線154之頂端的所在位置,不論是否有設置金屬座122於下方,支持結構152與後鈍化內連線154間的高度差均足以穩固地支撐導體凸塊170。在一些實施例中,支持結構152可為具有內俓r1之銅環或是定義出一平面之至少三個銅塊,如具有內俓r1(例如:約200μm)之圓平面。
第1B圖和第1C圖係依據一些實施例所繪示如第1A圖所示之含銅結構150與金屬座122的俯視示意圖。如第1B圖所示,含銅結構150的支持結構是具有開口的銅環152a,而後鈍化內連線154部分地位於銅環152a內並延伸穿過此開口。銅環152a與後鈍化內連線154相距有距離d1。在一些實施例中,距離d1係介於約10μm至約20μm之間,而銅環152a之寬度係介於約10μm至約20μm之
間。距離d1提供銅環152a與後鈍化內連線154間的不濕潤區(Non-Wetting Area)。在某些實施例中,距離d1可為0,意指後鈍化內連線154可連接至銅環152a。如第1C圖所示,第1A圖之金屬座122係一金屬環122a,例如:鋁環。在一些實施例中,金屬環122a的寬度w2介於約10μm至約20μm之間。
第1D圖和第1E圖係依據一些實施例所繪示如第1A圖所示之含銅結構150與金屬座122的俯視示意圖。如第1D圖所示,含銅結構150的支持結構係由至少三個銅塊152b所構成,此至少三個銅塊152b定義出用以支撐導體凸塊的平面。後鈍化內連線154係部分地位於此平面內並延伸穿過位於兩相鄰之銅塊152b間的開口。銅塊152b與後鈍化內連線154相距有距離d1。在一些實施例中,距離d1介於約10μm至約20μm之間,且每一銅塊152b之寬度介於約10μm至約20μm之間。半導體廠的客戶可指定後鈍化內連線154之形狀與尺寸的規格,以達成所欲之電性。距離d1提供不濕潤區於銅塊152b與後鈍化內連線154間,以定義後鈍化內連線154之形狀與尺寸為客戶規格中的形狀與尺寸,此客戶規格並不包含銅塊152b。在某些實施例中,距離d1可為0,意指銅塊152b與後鈍化內連線154可連接在一起。如第1E圖所示,金屬座是由至少三個金屬塊122b所構成,例如:鋁塊。在一些實施例中,每一金屬塊122b的寬度w2介於約10μm至約20μm之間。
第2A圖係繪示一些實施例之封裝結構的剖面示意
圖。如第2A圖所示,封裝結構200包含半導體基材210、金屬座222、金屬墊224、聚合物絕緣層240、含銅結構250、封裝層260及導體凸塊270。半導體基材210被定義為包含半導體材料之任何結構,包含但不受限於主體矽基材、半導體晶圓、絕緣體上矽基材或矽鍺基材。半導體基材210也可使用包含III族、IV族和V族元素之其他半導體材料。在一些實施例中,金屬座222和金屬墊224包含鋁、銅、銀、金、鎳、鎢、其合金和/或這些材料的多層結構。保護層230(例如:氮化矽或二氧化矽)可位於半導體基材210、金屬座222與金屬墊224上。保護層230中之開口暴露出金屬墊224之一部分。位於金屬座222上之部分的保護層130可被提高。聚合物絕緣層240位於保護層230上。位於聚合物絕緣層240之開口暴露出金屬墊224之上述部分。位於部分的保護層230上之部分的聚合物絕緣層240可被提高。在一些實施例中,聚合物絕緣層240包含環氧樹脂、聚亞醯胺、BCB、PBO或類似物。
含銅結構250係位於聚合物絕緣層240與暴露部分的金屬墊224上。含銅結構250包含支持結構252與後鈍化內連線254。後鈍化內連線254包含第一部分254a與第二部分254b。第一部分254a位於支持結構150內,而第二部分254b延伸穿過位於支持結構252之開口。在一些實施例中,後鈍化內連線254是電性連接至金屬墊224的重分佈線。導體凸塊270(例如:錫/鉛或錫/銀凸塊)係位於後鈍化內連線254之第一部分254a上,並被支持結構252所
支撐。封裝層260封裝含銅結構250與部分的導體凸塊270。在一些實施例中,封裝層260包含液態模封化合物或移轉成型化合物。
支持結構252係位於聚合物絕緣層240的突起(被提高)部分上,並與金屬座222對準。支持結構252所在位置高於後鈍化內連線254約金屬座222之厚度,其中支持結構252與後鈍化內連線254具有約略相同之厚度。在一些實施例中,支持結構252可為具有內俓r1之銅環或是定義出一平面之至少三個銅塊,如具有內俓r1(例如:約200μm)之圓平面。
第2B圖與第2C圖係繪示如第2A圖所示之又一例示含銅結構與又一例示金屬座的俯視示意圖。如第2B圖所示,含銅結構250的支持結構係具有開口的銅環252a,後鈍化內連線254之第一部分254a係位於銅環252a內,而後鈍化內連線254之第二部分254b延伸穿過此開口。銅環252a與後鈍化內連線254之第一部分254a相距有距離d1。在一些實施例中,距離d1係介於約10μm至約20μm之間,而銅環252a之寬度w1係介於約10μm至約20μm之間。距離d1提供不濕潤區於銅環252a與後鈍化內連線254間,以使後鈍化內連線254可滿足其中未設計銅環252a之客戶規格。在某些實施例中,距離d1可為0,意指後鈍化內連線254連接至銅環252a。如第2C圖所示,金屬座為金屬環222a,例如:鋁環。在一些實施例中,金屬環222a的寬度w2係介於約10μm至約20μm之間。
第2D圖與第2E圖係繪示如第2A圖所示又一例示含銅結構與又一例示金屬座的俯視示意圖。如第2D圖所示,含銅結構250的支持結構係由至少三個銅塊252b所構成,此至少三個銅塊252b定義出用以支撐導體凸塊之平面。後鈍化內連線254之第一部分254a係位於銅塊252b內,而後鈍化內連線254之第二部分254b延伸穿過位於兩相鄰之銅塊252b間的開口。銅塊252b與後鈍化內連線254相距有距離d1。在一些實施例中,距離d1係介於約10μm至約20μm之間,而每一個銅塊252b之寬度w1係介於約10μm至約20μm之間。距離d1提供不濕潤區於銅塊252b與後鈍化內連線254之間,以使後鈍化內連線254可滿足其中未設計銅塊252b之客戶規格。在某些實施例中,距離d1可為0,意指銅塊252b與後鈍化內連線154可連接在一起。如第2E圖所示,金屬座係由至少三個金屬塊222b所構成,例如鋁塊。在一些實施例中,每一個金屬塊222b的寬度w2係介於約10μm至約20μm之間。
第3A圖至第3G圖係繪示依據一些實施例用以說明封裝結構之製造方法之中間階段的剖面示意圖,其中,切斷線係用以表示製造具有後鈍化內連線之第一部分與後鈍化內連線之第二部分之支持結構的各階段。如第3A圖所示,沉積金屬層320於半導體基材310上。在一些實施例中,金屬層320包含鋁、銅、銀、金、鎳、鎢、其合金,或這些材料的多層結構。如第3B圖所示,以一光罩圖案化金屬層310來形成金屬墊324與金屬座322於半導體基材
310上。如第3C圖所示,形成保護層330(例如:氮化矽或二氧化矽)於半導體基材310與金屬座322上。部分的保護層330被金屬座322所提高。形成聚合物絕緣層340於保護層330上。部分的聚合物絕緣層340亦被保護層330的被提高部分所提高。在一些實施例中,聚合物絕緣層340包含環氧樹脂、聚亞醯胺、BCB、PBO或類似物。形成穿過保護層330與聚合物絕緣層340之開口342,以暴露出部分的金屬墊324。
如第3D圖所示,沉積含銅層350於開口342中與聚合物絕緣層340上。部分的含銅層350被聚合物絕緣層340的提高部分所提高。沉積含銅材料之方法包括濺鍍、印刷(Printing)、電鍍、無電電鍍(Electroless Plating)或化學氣相沉積法(Chemical Vapor Deposition;CVD)。例如:亦可進行電化學電鍍(Electro-Chemical Plating;ECP)以沉積含銅材料。然後,以一光罩圖案化含銅層350以形成支持結構352、於支持結構352內之後鈍化內連線的第一部分354a,以及後鈍化內連線的第二部分354b,如第3E圖所示。在一些實施例中,後鈍化內連線之第二部分354b是電性連接至暴露部分的金屬墊324的重分佈線。在某些實施例中,後鈍化內連線之第二部分354b係被動元件。支持結構352係與金屬座322對準。支持結構352可為如第2B圖所示之銅環,或由如第2D圖所示之至少個三個銅塊所構成。金屬座322可為如第2C圖所示之金屬環,或由如第2E圖所示之至少三個金屬塊所構成。
如第3F圖所示,形成導體凸塊370於支持結構352上,並接觸後鈍化內連線之第一部分354a。導體凸塊370可被支持結構352穩固地支撐,因而避免銲錫球移位的問題。如第3G圖所示,形成封裝層360以封裝後鈍化內連線(354a和354b)、支持結構352及部分的導體凸塊370。在一些實施例中,封裝層360包含液態模封化合物或移轉成型化合物。在本揭露之上述實施例中,支持結構352與後鈍化內連線(重分佈線)係以相同的光罩來形成,而金屬座322與金屬墊324係以相同的光罩來形成,因而可維持低製作成本。
請參見第4圖與第3A圖至第3G圖,第4圖係繪示各種實施例之封裝結構之製造方法的流程圖。此方法開始於操作410,其中沉積金屬層320於半導體基材310上。如第3A圖所示。在操作420中,圖案化金屬層310以形成金屬墊324與金屬座322於半導體基材310上。在操作430中,形成聚合物絕緣層340於半導體基材310、金屬墊324與金屬座322上,如第3C圖所示。在操作440中,形成穿過聚合物絕緣層340之第一開口342,以暴露出部分的金屬墊324,如第3C圖所示。在操作450中,沉積含銅層350於聚合物絕緣層340上,如第3D圖所示。在操作460中,圖案化含銅層350以形成具有第二開口的支持結構352及延伸穿過第二開口之後鈍化內連線,如第3E圖、第2B圖或第2D圖所示。在操作470中,形成導體凸塊370於支持結構352上,如第3F圖所示。在操作480中,形成封裝層
360,以封裝後鈍化內連線、支持結構352以及部分的導體凸塊370,如第3G圖所示。
依據一實施例,本揭露揭示一裝置,其包含半導體基材、金屬墊、聚合物絕緣層、含銅結構以及導體凸塊。金屬墊位於半導體基材上。聚合物絕緣層位於半導體基材上,並暴露出部分的金屬墊。含銅結構位於聚合物絕緣層上,並包含具有開口與後鈍化內連線之支持結構。後鈍化內連線部分地位於支持結構內且延伸穿過支持結構之開口,其中支持結構之頂端的所在位置高於後鈍化內連線之頂端的所在位置。導體凸塊被支持結構所支撐。
依據另一實施例,本揭露揭示一裝置,其包含半導體基材、金屬墊、金屬座、聚合物絕緣層、含銅結構以及導體凸塊。金屬墊與金屬座位於半導體基材上。聚合物絕緣層位於金屬座與半導體基材上,並暴露出部分的金屬墊。含銅結構位於聚合物絕緣層上,並包含支持結構與後鈍化內連線。支持結構對準金屬座並具有開口。金屬座與支持結構具有約略相同之寬度。後鈍化內連線部分地位於支持結構內,並延伸穿過支持結構之開口,其中支持結構之頂端的所在位置高於後鈍化內連線之頂端的所在位置。導體凸塊被支持結構所支撐。
依據其他實施例,本揭露揭示製造上述裝置之方法。在本方法中,沉積並圖案化金屬層於半導體基材上,以形成金屬墊與金屬座於半導體基材上。形成聚合物絕緣層於半導體基材、金屬墊與金屬座上。形成穿過聚合物絕
緣層之第一開口,以暴露出部分的金屬墊。沉積並圖案化含銅層於聚合物絕緣層上,以形成具有第二開口及延伸穿過第二開口之後鈍化內連線的支持結構。形成導體凸塊於支持結構上。
雖然本實施例及其優點已詳述,可以理解的是,於此可作多種變化、取代與改變而未背離如附加之請求項所定義之本揭露的精神與範圍。
此外,說明書中敘述之製程、機械、製造、材料之組成、方式、方法與步驟並非用以限制本應用之精神。於此領域中具有通常知識者可輕易地了解,依據本揭露使用現存或是後續發展的揭露、製程、機械、製造、材料之組成、方式、方法與步驟,可如在此所述之相對應的實施例,展現之實質上相同之功能或達到實質上相同之結果。因此,附加之請求項意即包含製程、機械、製造、材料之組成、方式、方法與步驟於其範圍內。
100‧‧‧封裝結構
110‧‧‧半導體基材
122‧‧‧金屬座
130‧‧‧保護層
140‧‧‧聚合物絕緣層
150‧‧‧含銅結構
152‧‧‧支持結構
154‧‧‧後鈍化內連線
160‧‧‧封裝層
170‧‧‧導體凸塊
r1‧‧‧內俓
Claims (10)
- 一種半導體裝置,包含:一半導體基材;一金屬墊,位於該半導體基材上;一聚合物絕緣層,位於該半導體基材上並暴露出該金屬墊之一部分;一含銅結構,位於該聚合物絕緣層上,該含銅結構包含:一支持結構,具有一開口;以及一後鈍化內連線(Post-Passivation Interconnect Line;PPI Line),部分地位於該支持結構內並延伸穿過該開口,其中該支持結構之一頂端的所在位置高於該後鈍化內連線之一頂端的所在位置;以及一導體凸塊,被該支持結構所支撐,且該導電凸塊係位於該後鈍化內連線上。
- 如請求項第1項所述之半導體裝置,更包含:一金屬座,位於該半導體基材上,其中該聚合物絕緣層設置於該金屬座上,該支持結構與該金屬座對準。
- 如請求項第2項所述之半導體裝置,其中該支持結構係一銅環或至少三銅塊以定義出一平面,且該金屬座係一金屬環或對應至該些銅塊之至少三金屬塊。
- 如請求項第2項所述之半導體裝置,其中該支持結構與該後鈍化內連線具有實質相同的厚度,該金屬座與該金屬墊具有實質相同的厚度。
- 如請求項第1項所述之半導體裝置,其中該支持結構與該後鈍化內連線相距一距離,且該距離係介於10μm至20μm之間。
- 如請求項第1項所述之半導體裝置,其中該支持結構之該頂端的所在位置係藉由該金屬墊之一厚度而高於該後鈍化內連線之該頂端的所在位置。
- 如請求項第1項所述之半導體裝置,更包含:一封裝層,其封裝該含銅結構與該導體凸塊之一部分,其中該封裝層包含一液態模封化合物(Liquid Molding Compound)或一移轉成型化合物(Transfer Molding Compound)。
- 一種半導體裝置,包含:一半導體基材;一金屬墊和一金屬座,位於該半導體基材上;一聚合物絕緣層,位於該金屬座與該半導體基材上,並暴露出該金屬墊之一部分;一含銅結構,位於該聚合物絕緣層上,該含銅結構包 含:一支持結構,其與該金屬座對準並具有一開口,其中該金屬座與該金屬墊具有實質相同的寬度;以及一後鈍化內連線,部分地位於該支持結構內並延伸穿過該開口,其中該支持結構之一頂端的所在位置高於該後鈍化內連線之一頂端的所在位置;以及一導體凸塊,被該支持結構所支撐。
- 如請求項第8項所述之半導體裝置,其中該支持結構係一銅環或至少三銅塊以定義出一平面,且該金屬座係一鋁環或對應至該些銅塊之至少三鋁塊。
- 一種半導體裝置的製造方法,包含:沉積一金屬層於一半導體基材上;圖案化該金屬層以形成一金屬墊與一金屬座於該半導體基材上;形成一聚合物絕緣層於該半導體基材、該金屬墊與該金屬座上;形成穿過該聚合物絕緣層之一第一開口,以暴露出該金屬墊之一部分;沉積一含銅層於該聚合物絕緣層上;圖案化該含銅層以形成一支持結構,其中該支持結構具有一第二開口及延伸穿過該第二開口之一後鈍化內連線;以及 形成一導體凸塊於該支持結構上。
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US9355978B2 (en) | 2013-03-11 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging devices and methods of manufacture thereof |
US9196529B2 (en) * | 2013-09-27 | 2015-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact pad for semiconductor devices |
US9379075B2 (en) * | 2014-01-28 | 2016-06-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with bump stop structure |
US9362243B2 (en) * | 2014-05-21 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package device and forming the same |
US9412686B2 (en) * | 2014-08-26 | 2016-08-09 | United Microelectronics Corp. | Interposer structure and manufacturing method thereof |
TWI611486B (zh) * | 2014-12-31 | 2018-01-11 | 矽品精密工業股份有限公司 | 半導體結構及其製法 |
US9818711B2 (en) * | 2015-06-30 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-passivation interconnect structure and methods thereof |
US10541218B2 (en) | 2016-11-29 | 2020-01-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Redistribution layer structure and fabrication method therefor |
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