TWI512317B - Coated light emitting device and method for coating thereof - Google Patents

Coated light emitting device and method for coating thereof Download PDF

Info

Publication number
TWI512317B
TWI512317B TW098131958A TW98131958A TWI512317B TW I512317 B TWI512317 B TW I512317B TW 098131958 A TW098131958 A TW 098131958A TW 98131958 A TW98131958 A TW 98131958A TW I512317 B TWI512317 B TW I512317B
Authority
TW
Taiwan
Prior art keywords
light
coating
coating layer
circumferential surface
led
Prior art date
Application number
TW098131958A
Other languages
Chinese (zh)
Other versions
TW201020582A (en
Inventor
Hendrik Johannes Boudewijn Jagt
Christian Kleynen
Aldegonda Lucia Weijers
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW201020582A publication Critical patent/TW201020582A/en
Application granted granted Critical
Publication of TWI512317B publication Critical patent/TWI512317B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05568Disposition the whole external layer protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Description

塗佈發光裝置及其塗佈方法Coating light emitting device and coating method thereof

本發明係關於一種發光裝置,其包含一配置於一子基板上之發光二極體,該裝置具有一橫向圓周表面及一頂部表面,及一光活性塗佈層。亦揭示一種用於將該塗佈層塗覆於一發光裝置上之方法。The invention relates to a light-emitting device comprising a light-emitting diode disposed on a sub-substrate, the device having a lateral circumferential surface and a top surface, and a photo-active coating layer. A method for applying the coating layer to a light-emitting device is also disclosed.

當今,含有發光二極體(LED)之高功率發光裝置用於數目漸增的照明應用中。大體而言,使用用於製成高功率LED之兩種材料系統。Today, high power lighting devices containing light emitting diodes (LEDs) are used in an increasing number of lighting applications. In general, two material systems for making high power LEDs are used.

InGaN用以產生高效藍色LED。InGaN is used to produce high efficiency blue LEDs.

AlInGaP用以產生高效紅色及琥珀色LED。AlInGaP is used to produce highly efficient red and amber LEDs.

兩種材料系統在其材料組合物被改變以自藍色向綠色且自紅色向綠色轉變發射波長時遭受嚴重的效率損失。Both material systems suffer from severe efficiency losses when their material compositions are altered to shift wavelengths from blue to green and from red to green.

藉由在光路徑中塗覆波長轉換材料(諸如,螢光及/或發光材料),發射波長可經調適成許多特定波長。藍色及/或UV發光LED尤其適合用作該等發光二極體(或波長轉換發光二極體)中之光源,此係歸因於波長轉換材料通常吸收由二極體所發射之光的至少部分且發射具有較高波長(紅色位移)之光。By coating a wavelength converting material, such as a fluorescent and/or luminescent material, in the light path, the emission wavelength can be adapted to a number of specific wavelengths. Blue and/or UV-emitting LEDs are particularly suitable for use as light sources in such light-emitting diodes (or wavelength-converting light-emitting diodes) due to the fact that wavelength-converting materials typically absorb light emitted by the diodes. Light having a higher wavelength (red displacement) is emitted at least in part.

InGaN系統可與該波長轉換材料或光學組件(例如,磷光體材料)組合,以將高能量、低波長藍色光之部分轉換至較低能量、較高波長。以該方式,藉由將藍色LED與該LED上之適當磷光體組合,可產生白色LED(通常使用YAG:Ce磷光體),或藍色LED可使用合適磷光體材料而轉換至綠色、黃色、琥珀色或紅色LED。此顏色轉換伴隨效率損失(主要為斯托克位移損失),但藍色LED之高起始效率使至琥珀色及紅色之均勻完全轉換為導引遭受熱效率問題之發射AlInGaP系統的有吸引力的替代者。The InGaN system can be combined with the wavelength converting material or optical component (eg, a phosphor material) to convert portions of high energy, low wavelength blue light to lower energy, higher wavelengths. In this way, a white LED (typically using a YAG:Ce phosphor) can be produced by combining a blue LED with a suitable phosphor on the LED, or the blue LED can be converted to green, yellow using a suitable phosphor material. , amber or red LED. This color conversion is accompanied by loss of efficiency (mainly Stokes displacement loss), but the high initial efficiency of the blue LED makes the uniform conversion to amber and red completely attractive for guiding the AlInGaP system that is subject to thermal efficiency problems. replacement.

JP 2002353507揭示一種發光體,其中使一將所發射之光改變至另一顏色的螢光物質安定化。此係藉由由一作為用以穩定樹脂之總量的晶粒黏結劑的含樹脂磷光體來填充一LED內部之多個槽而達成。JP 2002353507 discloses an illuminant in which a luminescent substance that changes the emitted light to another color is stabilized. This is achieved by filling a plurality of grooves inside the LED with a resin-containing phosphor as a grain binder for stabilizing the total amount of the resin.

習知LED磷光體技術在LED頂部使用嵌入於樹脂中之磷光體顏料或粉末顆粒。然而,此導致背向散射損失及處理變化。一種新技術使用稱作「Lumiramic」技術之陶瓷磷光體技術(Lumiramic轉換器描述於US2005/0269582 A1中)。此技術使得有可能產生具有良好界定之厚度及幾何形狀之高光及熱穩定陶瓷磷光體小板以與LED幾何形狀(其通常為正方形,1×1mm)匹配。藉由控制此等陶瓷磷光體(phosphor body或phosphor)中之孔隙率,具有角度之路徑長度差可經充分擾亂/散射以提供相當均一的跨角度顏色效能,同時犧牲經由背向散射朝向LED的一些光。Conventional LED phosphor technology uses phosphor pigments or powder particles embedded in a resin on top of the LED. However, this results in backscatter loss and processing variations. A new technique uses a ceramic phosphor technology called "Lumiramic" technology (Lumiramic converter is described in US 2005/0269582 A1). This technique makes it possible to produce high gloss and thermally stable ceramic phosphor platelets with well defined thicknesses and geometries to match the LED geometry (which is typically square, 1 x 1 mm). By controlling the porosity in such phosphor bodies or phosphors, the angular path length difference can be sufficiently disturbed/scattered to provide a fairly uniform cross-angle color performance while sacrificing toward the LED via backscattering Some light.

藉由使用Lumiramic技術,可藉由藍色光至較高波長之部分轉換(使用(例如)YAG:Ce磷光體)而製成白色LED。又,可藉由試圖充分吸收藍色LED光且將其高效地轉換至與綠色、琥珀色或紅色特性匹配之色譜而製成綠色、琥珀色及紅色LED。By using the Lumiramic technique, a white LED can be made by partial conversion of blue light to a higher wavelength (using, for example, a YAG:Ce phosphor). Again, green, amber, and red LEDs can be made by attempting to fully absorb the blue LED light and efficiently convert it to a chromatogram that matches the green, amber, or red characteristics.

然而,此小板磷光體技術要求磷光體之不可忽略的厚度與LED之尺寸相當。磷光體針對白色LED通常具有呈1×1mm之尺寸的約120μm之厚度。此造成自此正方形體積(squared volume)之四個橫向表面或側向表面之光發射的重大貢獻。However, this small plate phosphor technology requires that the non-negligible thickness of the phosphor be comparable to the size of the LED. The phosphor typically has a thickness of about 120 [mu]m in the size of 1 x 1 mm for white LEDs. This causes a significant contribution to the light emission from the four lateral or lateral surfaces of this squared volume.

此外,LED自身具有一具有不可忽略之光提取的側向表面。LED晶片可具有「覆晶」類型,其中兩個引線定位於晶片之同一側面上。此設計促進波長轉換體在裝置之發光表面上的配置。在「覆晶」LED技術中,LED與基板或光透射體一起於其上裝配。當未移除此基板(通常為藍寶石)時,具有通常100μm之厚度的此藍寶石基板亦提供重大側向表面貢獻。為解決此問題,可在升高(lift off)過程中移除該基板。又,由量子井及陽極、陰極及反射體組成之InGaN LED堆疊可具有約10μm之厚度,且由具有高折射率之材料組成,從而造成相當大的波導及不可忽略之側面發射。Furthermore, the LED itself has a lateral surface with non-negligible light extraction. The LED wafer can be of the "flip-chip" type in which two leads are positioned on the same side of the wafer. This design facilitates the configuration of the wavelength converting body on the light emitting surface of the device. In "flip-chip" LED technology, an LED is mounted on a substrate or a light transmissive body. This sapphire substrate, which typically has a thickness of 100 μm, also provides significant lateral surface contribution when the substrate (usually sapphire) is not removed. To solve this problem, the substrate can be removed during a lift off process. Also, an InGaN LED stack consisting of a quantum well and an anode, a cathode, and a reflector can have a thickness of about 10 [mu]m and be composed of a material having a high refractive index, resulting in a relatively large waveguide and non-negligible side emission.

連接LED與Lumiramic磷光體之黏結層增大側向表面厚度且通常具有10μm之厚度。The bonding layer connecting the LED to the Lumiramic phosphor increases the lateral surface thickness and typically has a thickness of 10 μm.

黏結材料之實例包括(例如)聚矽氧樹脂。Examples of the bonding material include, for example, a polyoxymethylene resin.

與自發光裝置之橫向(邊緣)表面所發射之光相關的缺點如下:自起於LED邊緣及黏結劑邊緣之邊緣表面的未轉換光(諸如,藍色光)洩漏。對於部分轉換Lumiramic,此可造成過量的藍色光以及在相對於法線方向之大角度處存在之藍色光通量的顯著變化,且因此降低跨角度顏色均一性及一致性。如在處理中出現之(尤其)層厚度變化(諸如,黏結劑厚度)及磷光體置放不精確產生自側面之藍色光洩漏的變化。對於完全轉換Lumiramic,藍色光洩漏大大降低綠色、琥珀色或紅色LED之色純度。另外,此光洩漏降低效率,因為藍色光之部分未轉換至所要顏色。Disadvantages associated with light emitted by the lateral (edge) surface of the self-illuminating device are as follows: unconverted light (such as blue light) leaking from the edge of the edge of the LED and the edge of the binder. For partially converted Lumiramic, this can result in significant blue light and significant changes in blue light flux present at large angles relative to the normal direction, and thus reduce cross-angle color uniformity and consistency. Changes in layer thickness, such as thickness of the layer (such as thickness of the binder) and phosphor placement, which occur during processing, result in a change in blue light leakage from the side. For fully converted Lumiramic, blue light leakage greatly reduces the color purity of green, amber or red LEDs. In addition, this light leakage reduces efficiency because portions of the blue light are not converted to the desired color.

與自磷光體之頂部表面的轉換光譜相比,光譜不同的經由磷光體之橫向邊緣的波長轉換歸因於自側面所發射之光與自頂部表面所發射之光之間的路徑長度差。此針對完全轉換磷光體尤其非吾人所樂見,因為經由磷光體側面之不完整轉換降低LED之色純度。The wavelength conversion through the lateral edges of the phosphor differs from the converted spectrum of the top surface of the phosphor due to the difference in path length between the light emitted from the side and the light emitted from the top surface. This is especially desirable for fully converted phosphors because the color purity of the LEDs is reduced by incomplete conversion of the sides of the phosphor.

自側向表面之部分地(大約一半)向下導引,返回至通常接近於LED晶粒而定位之子基板的光通量發射。大體而言,向錯誤側面所發射之該光,以及發射至頂部方向但與法線方向呈大角度之光難以在與光源組合之光學系統(諸如,視準儀光學器件、透鏡等)中有效地俘獲,且因此有可能降低系統效率。類似地,向下之光通量與子基板相互作用,且通常將被部分吸收,部分反射且通常由與子基板表面之相互作用影響顏色。自子基板所散射或反射之光亦增大LED源面積且造成雜散光,其針對諸如汽車前向照明或投影LED系統之光展量臨界應用為非所要的。Partially (approximately half) of the lateral surface is directed downwards, returning to the luminous flux emission of the sub-substrate positioned generally close to the LED dies. In general, the light emitted to the wrong side and the light emitted to the top direction but at a large angle to the normal direction are difficult to be effective in an optical system (such as a collimator optics, lens, etc.) combined with the light source. Captured, and therefore potentially reduces system efficiency. Similarly, the downward flux interacts with the submount and will typically be partially absorbed, partially reflected and typically affected by color interaction with the surface of the submount. Light scattered or reflected from the sub-substrate also increases the LED source area and causes stray light, which is undesirable for light spread critical applications such as automotive forward illumination or projection LED systems.

與活性LED表面面積相當之增大的光展量。此係由與LED之表面面積相當的磷光體表面之增大的表面面積引起。即使磷光體頂部表面面積與LED類似,磷光體側面仍將促成增大之源面積。此在諸如汽車前向照明、相機或視訊快閃(video flash)模組或投影LED系統之光展量臨界應用中尤其重要。An increased amount of light that is comparable to the surface area of the active LED. This is caused by the increased surface area of the phosphor surface corresponding to the surface area of the LED. Even if the phosphor top surface area is similar to an LED, the phosphor side will still contribute to an increased source area. This is especially important in light spread critical applications such as automotive forward lighting, camera or video flash modules or projection LED systems.

總之,發光裝置之各種實施例皆遭受與Lumiramic及/或黏結層及/或LED晶粒之側邊緣相關的缺點。此等缺點主要與歸因於側面發射與頂部發射之間的非吾人所樂見之光譜差異的顏色變化或有限的色純度相關。此外,將存在自側向表面之部分地(大約一半)向下及向側面導引的波長轉換光通量發射,其難以有效地用於塗覆中。另外,與活性LED表面面積相比,光展量亦可增大,此為諸如投影LED系統、汽車前燈或聚光燈之光展量臨界應用中之一缺點。In summary, various embodiments of the illumination device suffer from the disadvantages associated with Lumiramic and/or the edge layers of the bonding layer and/or LED dies. These shortcomings are primarily related to color variations or limited color purity due to spectral differences between the side emission and the top emission that are not pleasing to the eye. Furthermore, there will be a wavelength-converted light flux emission that is directed (approximately half) from the lateral surface to the side and sideways, which is difficult to effectively use in coating. In addition, the amount of light spread can be increased compared to the surface area of the active LED, which is one of the disadvantages of light spread critical applications such as projection LED systems, automotive headlights or spotlights.

一種用於塗佈發光裝置之方法已揭示於US 2005/0062140中,其使用一用於在LED裝置上塗覆具有光轉換顆粒之材料的模具。然而,此方法涉及一特定塗佈設備,且為費力且昂貴的。A method for coating a light-emitting device has been disclosed in US 2005/0062140, which uses a mold for coating a material having light-converting particles on an LED device. However, this method involves a particular coating apparatus and is laborious and expensive.

因此,存在對一發光裝置及用於產生該發光裝置之方法的需要,該發光裝置不遭受歸因於穿過該發光裝置之橫向邊緣之光發射的非吾人所樂見的顏色變化或純度及效率損失,或提供與活性LED表面面積相當之增大的光展量。Accordingly, there is a need for a light emitting device and a method for producing the same that does not suffer from color variations or purity that are not desired due to light emission through the lateral edges of the light emitting device. Loss of efficiency, or provide an increased amount of light that is comparable to the surface area of the active LED.

本發明之一目標為至少部分地克服此等問題,且提供一種發光裝置及一種用於產生該發光裝置的方法,該發光裝置不遭受歸因於光經由該發光裝置之橫向表面之散射的效率損失。It is an object of the present invention to at least partially overcome such problems, and to provide a light emitting device and a method for producing the same that does not suffer from the efficiency of scattering due to light passing through the lateral surface of the light emitting device loss.

因此,根據一第一態樣,本發明提供一種發光裝置1,其包含一配置於一子基板3上之發光二極體2。該裝置具有一橫向圓周表面6及一頂部表面8,及一光活性塗佈層7。該塗佈層7:Therefore, according to a first aspect, the present invention provides a light-emitting device 1 comprising a light-emitting diode 2 disposed on a sub-substrate 3. The device has a lateral circumferential surface 6 and a top surface 8, and a photoactive coating layer 7. The coating layer 7:

- 沿著該圓周表面6之至少一部分覆蓋,- covering at least a portion of the circumferential surface 6,

- 自該子基板3延伸至該頂部表面8,及- extending from the sub-substrate 3 to the top surface 8, and

- 本質上不覆蓋該頂部表面8。- Essentially not covering the top surface 8.

當該發光裝置之該橫向圓周表面的至少部分由一光活性塗佈層自該子基板覆蓋至該頂部表面但本質上不包括該頂部表面時,可控制光自該橫向表面之逸出。以該方式,光可(例如)在該頂部表面處增加。When at least a portion of the lateral circumferential surface of the illumination device is covered from the sub-substrate to the top surface by a photoactive coating layer but does not substantially include the top surface, control of light escape from the lateral surface. In this way, light can be increased, for example, at the top surface.

在本發明之實施例中,該光活性塗佈層係選自反射塗佈層、漫射塗佈層、光譜過濾塗佈層、發光塗佈層,及阻光塗佈層,及其組合的群。In an embodiment of the invention, the photoactive coating layer is selected from the group consisting of a reflective coating layer, a diffusion coating layer, a spectral filter coating layer, a luminescent coating layer, and a light blocking coating layer, and combinations thereof group.

當該光活性塗佈層用以塗佈該橫向圓周表面時,該塗佈層將根據選擇而變成反射的、漫射的、光譜過濾的、發光的,或阻光的。When the photoactive coating layer is used to coat the lateral circumferential surface, the coating layer will become reflective, diffuse, spectrally filtered, luminescent, or opaque, depending on the selection.

在本發明之實施例中,該裝置進一步包含一配置於該發光二極體上之光學組件4,該光學組件4係選自一磷光體、一光透射體及一反射體,及其組合的群。In an embodiment of the invention, the device further includes an optical component 4 disposed on the LED, the optical component 4 being selected from the group consisting of a phosphor, a light transmissive body, and a reflector, and combinations thereof. group.

在本發明之實施例中,該反射體經配置,使得光將經由該橫向圓周表面之至少一部分逸出。In an embodiment of the invention, the reflector is configured such that light will escape through at least a portion of the lateral circumferential surface.

在本發明之實施例中,進一步包含一配置於該發光裝置上之光學組件。In an embodiment of the invention, an optical component disposed on the light emitting device is further included.

在本發明之實施例中,該塗佈層為固體。該橫向圓周表面亦可由一個以上塗佈層塗佈。In an embodiment of the invention, the coating layer is a solid. The lateral circumferential surface can also be coated by more than one coating layer.

在本發明之實施例中,根據本發明之發光裝置可以陣列配置。In an embodiment of the invention, the illumination device according to the invention may be arranged in an array.

藉由以陣列配置根據本發明之具有一在該橫向圓周表面上之塗佈層的發光裝置,光學串擾可(例如)在個別發光裝置之間得以避免。因此,該等發光裝置可個別定址。By arranging the light-emitting devices according to the present invention having a coating layer on the lateral circumferential surface in an array, optical crosstalk can be avoided, for example, between individual light-emitting devices. Therefore, the illuminating devices can be individually addressed.

發光裝置陣列亦可經配置以共用塗佈層。The array of light emitting devices can also be configured to share a coating layer.

根據一第二態樣,本發明提供一種用於在一包含一發光二極體之發光裝置1的一橫向圓周表面6之至少一部分上塗覆一塗佈層的方法。該方法包含:在該圓周表面6之至少一部分上配置一光活性塗佈層7,該塗佈層7自子基板3延伸至頂部表面8,及本質上不覆蓋該頂部表面8。According to a second aspect, the invention provides a method for applying a coating layer on at least a portion of a lateral circumferential surface 6 of a light-emitting device 1 comprising a light-emitting diode. The method comprises disposing a photoactive coating layer 7 on at least a portion of the circumferential surface 6, the coating layer 7 extending from the submount 3 to the top surface 8, and not covering the top surface 8 in nature.

本發明者已認識到,藉由使用本發明之方法以塗佈發光裝置之橫向圓周表面或橫向邊緣,可達成一快速及簡單的塗佈方法。該裝置之塗佈可另外藉由使用毛細管力以塗佈橫向圓周表面而達成。歸因於橫向圓周表面上所形成之此固體塗佈層及此塗層(coating)之經調諧的光學性質,逸出發光裝置之橫向邊緣的光性質得以控制。The inventors have recognized that a fast and simple coating process can be achieved by using the method of the present invention to coat the lateral circumferential or lateral edges of the illumination device. Coating of the device can additionally be achieved by using capillary forces to coat the lateral circumferential surface. Due to the tuned optical properties of the solid coating layer and the coating formed on the lateral circumferential surface, the light properties of the lateral edges of the escaping illumination device are controlled.

在本發明之實施例中,該方法進一步包含以下步驟:In an embodiment of the invention, the method further comprises the steps of:

- 在該子基板3上塗覆一第一液體塗層組合物,Applying a first liquid coating composition on the sub-substrate 3,

- 允許該第一塗層組合物覆蓋該發光裝置1之一第一橫向圓周表面6的至少部分,及Allowing the first coating composition to cover at least part of the first lateral circumferential surface 6 of one of the illumination devices 1 and

- 凝固該第一塗層組合物以在該第一橫向圓周表面6之該至少部分上獲得一第一固體塗佈層7。- solidifying the first coating composition to obtain a first solid coating layer 7 on the at least a portion of the first lateral circumferential surface 6.

在本發明之實施例中,該塗層組合物藉由毛細管力經允許覆蓋一第一橫向圓周表面6之至少部分。In an embodiment of the invention, the coating composition is allowed to cover at least a portion of a first lateral circumferential surface 6 by capillary force.

在本發明之實施例中,該塗層組合物由一選自藉由針施配、噴嘴施配、藉由印刷及藉由噴灑之群的方法來塗覆。In an embodiment of the invention, the coating composition is applied by a method selected from the group consisting of needle dispensing, nozzle dispensing, printing, and by spraying.

當使用此等塗覆方法時,可達成確切量之塗層組合物。因此,有可能藉由控制所使用之塗層組合物之量而控制塗佈層的量。When such coating methods are used, the exact amount of coating composition can be achieved. Therefore, it is possible to control the amount of the coating layer by controlling the amount of the coating composition used.

在本發明之實施例中,該液體塗層組合物在凝固後即形成一選自反射塗佈層、漫射塗佈層、光譜過濾塗佈層、發光塗佈層,及阻光塗佈層,及其組合之群的固體塗佈層。In an embodiment of the present invention, the liquid coating composition forms a coating selected from the group consisting of a reflective coating layer, a diffusion coating layer, a spectral filter coating layer, a light-emitting coating layer, and a light-blocking coating layer after solidification. And a solid coating layer of the group of combinations thereof.

當形成該固體塗佈層時,可控制自該發光裝置之該橫向圓周表面的光洩漏。因此,為不同目的,可選擇該塗層組合物以形成一反射、漫射、光譜過濾、發光或阻光層。When the solid coating layer is formed, light leakage from the lateral circumferential surface of the light-emitting device can be controlled. Thus, for different purposes, the coating composition can be selected to form a reflective, diffuse, spectrally filtered, luminescent or light-blocking layer.

該塗層組合物可包含一溶膠-凝膠衍生材料或一聚矽氧樹脂。The coating composition may comprise a sol-gel derived material or a polyoxynoxy resin.

在本發明之實施例中,當使用極性塗層組合物時,該橫向圓周表面可經預處理以變成極性的。或者,該橫向圓周表面可經處理以變成非極性的,且可使用非極性或極性塗層組合物。In an embodiment of the invention, when a polar coating composition is used, the lateral circumferential surface can be pretreated to become polar. Alternatively, the lateral circumferential surface can be treated to become non-polar and a non-polar or polar coating composition can be used.

當該子基板及該橫向圓周表面以該方式經預處理時,極性塗層組合物將由毛細管力促進以覆蓋該子基板。藉由僅處理該子基板及該橫向圓周表面之一部分以變成極性的,有可能僅塗佈該橫向圓周表面之一些部分。因此,亦有可能獲得該橫向圓周表面之無該塗佈層的部分。類似地,可在經預處理以變成極性或非極性之表面上使用非極性塗層組合物,以便塗佈該橫向圓周表面之選定部分。When the submount and the lateral circumferential surface are pretreated in this manner, the polar coating composition will be promoted by capillary forces to cover the submount. By treating only a portion of the sub-substrate and the lateral circumferential surface to become polar, it is possible to coat only portions of the lateral circumferential surface. Therefore, it is also possible to obtain a portion of the lateral circumferential surface free of the coating layer. Similarly, a non-polar coating composition can be applied to a surface that has been pretreated to become polar or non-polar to coat selected portions of the lateral circumferential surface.

在本發明之實施例中,該方法進一步包含以下步驟:In an embodiment of the invention, the method further comprises the steps of:

- 在該子基板上塗覆至少一第二液體塗層組合物,Applying at least one second liquid coating composition on the sub-substrate,

- 允許該第二塗層組合物覆蓋該發光裝置之一第二橫向圓周表面的至少部分,及凝固該第二塗層組合物以在該第二橫向圓周表面之該至少部分上獲得一第二固體塗佈層。Allowing the second coating composition to cover at least a portion of the second lateral circumferential surface of one of the illumination devices, and solidifying the second coating composition to obtain a second portion on the at least a portion of the second lateral circumferential surface Solid coating layer.

該第一塗層組合物可在一實施例中與該第二塗層組合物不同。The first coating composition can be different from the second coating composition in one embodiment.

歸因於在該第一塗佈層及該第二塗佈層中使用不同材料,有可能達成具有反射、漫射、光譜過濾、發光及阻光光學功能性之不同固體塗佈層。因此,同一橫向圓周表面可由具有同一或不同光學功能性之一個以上塗佈層塗佈。Due to the use of different materials in the first coating layer and the second coating layer, it is possible to achieve different solid coating layers with reflective, diffuse, spectral filtering, luminescent, and optical blocking optical functionality. Thus, the same lateral circumferential surface can be coated by more than one coating layer having the same or different optical functionality.

該第一橫向圓周表面可在另一實施例中與該第二橫向圓周表面不同。The first lateral circumferential surface may be different from the second lateral circumferential surface in another embodiment.

當不同橫向圓周表面由不同固體塗佈層塗佈時,橫向圓周表面之部分接收不同光學功能性。When different lateral circumferential surfaces are coated by different solid coating layers, portions of the lateral circumferential surface receive different optical functionality.

應進一步注意,本發明係關於技術方案之所有可能組合。It should be further noted that the present invention pertains to all possible combinations of technical solutions.

在實施方式中更多地描述此等及其他實施例。These and other embodiments are described more in the embodiments.

現將參看展示本發明之當前較佳實施例之附圖更詳細地描述本發明之此及其他態樣。作為一實例,諸圖展示反射塗佈層。然而,塗佈層亦可為發光的、有色的、散射的及吸收的。諸圖未必根據比例繪製。This and other aspects of the present invention will now be described in more detail with reference to the accompanying drawings in which, As an example, the figures show a reflective coating layer. However, the coating layer can also be luminescent, colored, scattering, and absorbing. The figures are not necessarily drawn to scale.

在下文中,更詳細地描述根據本發明之發光裝置的實施例。Hereinafter, an embodiment of a light-emitting device according to the present invention will be described in more detail.

相應地,在圖1中說明本發明之該裝置的一實施例。Accordingly, an embodiment of the apparatus of the present invention is illustrated in FIG.

因此,在此實施例中,一包含一覆晶LED 2之發光裝置1配置於一子基板3上。在LED 2上,一光學組件4(在此實施例中,為磷光體4a,亦即Lumiramic)經配置以接收由LED 2所發射之光。黏結層5用以連接磷光體4a與LED 2。一具有反射功能性之塗佈層7配置於發光裝置1之橫向表面或橫向圓周表面6上,使得光不經由發光裝置1之橫向表面6實質上逸出(escape)。實情為,光經反射以經由磷光體4a之頂部表面8最終離開。Therefore, in this embodiment, a light-emitting device 1 including a flip-chip LED 2 is disposed on a sub-substrate 3. On the LED 2, an optical component 4 (in this embodiment, phosphor 4a, ie Lumiramic) is configured to receive the light emitted by the LED 2. The bonding layer 5 is used to connect the phosphor 4a and the LED 2. A coating layer 7 having reflective functionality is disposed on the lateral surface or lateral circumferential surface 6 of the illumination device 1 such that light does not substantially escape through the lateral surface 6 of the illumination device 1. Instead, the light is reflected to eventually exit via the top surface 8 of the phosphor 4a.

如本文中所使用,橫向表面、橫向邊緣、橫向側面及橫向圓周表面皆指代發光二極體周圍的橫向表面面積,但不包括頂部表面面積。As used herein, lateral, lateral, lateral, and lateral circumferential surfaces refer to the lateral surface area around the light emitting diode, but do not include the top surface area.

在光線集合I中,在p、n接面處所產生之藍色光透射至黏結層且在側面塗層上入射,從而造成向黏結劑、磷光體或LED的漫射背向散射。In the set of rays I, the blue light generated at the p, n junction is transmitted to the bonding layer and incident on the side coating, resulting in diffuse backscattering of the bonding agent, phosphor or LED.

在光線集合II中,藍色光不在磷光體中轉換且反射回至磷光體。經由頂部表面提取反射光之部分。In ray collection II, blue light is not converted in the phosphor and reflected back to the phosphor. A portion of the reflected light is extracted via the top surface.

在光線集合III中,所產生之光在高指數InGaN材料(n=2.7)中經導波且在該光由側面塗層進行背向反射所處之邊緣處入射。背向散射過程中之角度重新分布有助於克服由波導對光的截留(entrapment)。該光之部分因此自LED向黏結劑及磷光體層提取。In the light collection III, the generated light is guided in a high-index InGaN material (n = 2.7) and incident at the edge where the light is back-reflected by the side coating. The angular redistribution during backscattering helps to overcome the entrapment of light by the waveguide. This portion of the light is thus extracted from the LED to the binder and phosphor layer.

在光線集合VI中,藍色光在磷光體中被吸收且轉換至(例如)紅色光。紅色光在以致撞擊側向表面之方向上行進,且經由頂部表面背向散射且部分提取。由於光線集合在彼此類似之實施例中類似,因此並非所有實施例含有對該等光線集合的特定參考。In the light collection VI, blue light is absorbed in the phosphor and converted to, for example, red light. The red light travels in the direction of impacting the lateral surface and is backscattered and partially extracted via the top surface. Since the collection of rays is similar in embodiments similar to each other, not all embodiments contain a specific reference to the collection of rays.

可察覺到實施例1之許多變化。舉例而言,可使用完全轉換或部分轉換磷光體頂部發射體。對於完全轉換,磷光體吸收藍色光,且在很大程度上將其轉換至具有較高波長之另一顏色。此出現之量視磷光體中之發光中心的Lumiramic厚度及濃度及吸收係數而定。爭取達成磷光體中之足夠大的路徑長度以將幾乎所有藍色光轉換至較大波長,諸如綠色、琥珀色或紅色。歸因於側面塗層,跨角度顏色效能非常良好,亦即,在較大角度處不存在藍色光洩漏。Many variations of Example 1 are perceptible. For example, a fully converted or partially converted phosphor top emitter can be used. For complete conversion, the phosphor absorbs blue light and converts it to another color with a higher wavelength. This amount depends on the Lumiramic thickness and concentration and absorption coefficient of the luminescent center in the phosphor. Try to achieve a sufficiently large path length in the phosphor to convert almost all blue light to a larger wavelength, such as green, amber or red. Due to the side coating, the cross-angle color performance is very good, that is, there is no blue light leakage at a large angle.

在圖2中說明本發明之該裝置的另一實施例。Another embodiment of the apparatus of the present invention is illustrated in FIG.

此實施例與實施例1類似,除了磷光體4a之側面為角形的,與LED相比具有懸垂物。反射塗層存在於右側面及左側面上,但具有不同角度。This embodiment is similar to Embodiment 1 except that the side of the phosphor 4a is angular and has a depending on the LED. The reflective coating is present on the right and left side faces but at different angles.

在彼狀況下,磷光體尺寸比LED尺寸大。LED與磷光體之間的黏結層可實質上覆蓋LED面積或較大的磷光體面積。若黏結面積比磷光體面積小,則僅懸垂物面積可以塗層填滿以(例如)阻礙LED及/或黏結劑之側面發射,從而不覆蓋磷光體之橫向側面。或者,可覆蓋懸垂物面積以及磷光體之側面兩者。此外,懸垂物可具有不同形狀,諸如角形或正方形。In this case, the phosphor size is larger than the LED size. The bonding layer between the LED and the phosphor can substantially cover the LED area or a larger phosphor area. If the bond area is smaller than the phosphor area, only the overhang area may be filled with a coating to, for example, obstruct the side emission of the LED and/or the adhesive so as not to cover the lateral sides of the phosphor. Alternatively, both the overhang area and the sides of the phosphor can be covered. Furthermore, the overhangs can have different shapes, such as angles or squares.

磷光體亦可相對於LED面積為不夠大的,或磷光體之置放可能不精確以致不充分覆蓋LED面積,但在特定方向上展示懸垂物或傾板(tilt)兩者。側面塗層提供用以覆蓋及遮擋LED之直接發射部分的構件。不夠大的Lumiramic可在產生中具有更好黏結及置放精確度。The phosphor may also be insufficiently large relative to the area of the LED, or the placement of the phosphor may be inaccurate such that the LED area is not adequately covered, but both the overhang or tilt are displayed in a particular direction. The side coating provides a means to cover and block the direct emitting portion of the LED. Lumiramic, which is not big enough, has better bonding and placement accuracy in production.

黏結面積可擴展超過LED面積及磷光體面積,且黏結材料之部分可覆蓋LED及磷光體之橫向側面的部分。The bond area can be extended beyond the LED area and the phosphor area, and portions of the bond material can cover portions of the LED and the lateral sides of the phosphor.

塗層可僅在橫向表面之部分或整個表面上延伸,只要其自子基板延伸至頂部表面,但不包括頂部表面。有可能僅塗佈Lumiramic,或塗佈LED。此係藉由調諧發光裝置之子基板及橫向表面的濕化行為而達成。The coating may extend only over a portion of the lateral surface or the entire surface as long as it extends from the sub-substrate to the top surface, but does not include the top surface. It is possible to coat only Lumiramic or to coat LEDs. This is achieved by tuning the sub-substrate of the illuminating device and the wetting behavior of the lateral surface.

在另一實施例中,亦有可能在LED下方(在此處,進行與子基板之電接觸)塗佈。歸因於電極圖案化,一些光將經由電極或鏡面之間的間隙洩漏。此光可在LED尾部(在此處,其將有可能被吸收)進行導波。若使用反射側面塗層,則此光向後散射至LED以再使用。In another embodiment, it is also possible to apply under the LED (here, making electrical contact with the submount). Due to electrode patterning, some of the light will leak through the gap between the electrodes or mirrors. This light can be guided at the tail of the LED where it will likely be absorbed. If a reflective side coating is used, this light is backscattered to the LED for reuse.

當使用反射塗佈層時,其亦可在子基板圍繞物上散佈(spread)以增大子基板之反射率,且藉此降低經導引回至LED之任何光的光損失。When a reflective coating layer is used, it can also be spread on the sub-substrate surround to increase the reflectivity of the sub-substrate and thereby reduce the light loss of any light that is directed back to the LED.

在另一實施例中,可對發光裝置加圓頂(dome)。In another embodiment, a dome can be added to the illumination device.

在圖3中說明本發明之該裝置的又一實施例。Yet another embodiment of the apparatus of the present invention is illustrated in FIG.

此實施例與實施例1類似,但具有兩個塗佈層7a及7b。第一塗佈層7b為透明的,且第二塗佈層7a為反射的。各層之功能性及數目的其他組合亦為可行的。然而,在該塗層組合之情況下的一益處可為,填滿黏結層之部分或未填滿不完全存在之面積的機會。舉例而言,黏結過程中之變化可造成不完全黏結未充分覆蓋晶粒與LED之間的間隙的層。此可首先以一透明層填滿,且接著以(例如)一反射層覆蓋。否則,反射層將填滿間隙,且造成遮擋將造成光損失之光通量的部分。塗佈層之其他組合當然可為可能的。This embodiment is similar to Embodiment 1, but has two coating layers 7a and 7b. The first coating layer 7b is transparent, and the second coating layer 7a is reflective. Other combinations of functionality and number of layers are also possible. However, a benefit in the case of this combination of coatings may be the opportunity to fill a portion of the bonding layer or to fill an incompletely existing area. For example, a change in the bonding process can result in a layer that does not completely adhere to the gap between the die and the LED. This may first be filled with a transparent layer and then covered with, for example, a reflective layer. Otherwise, the reflective layer will fill the gap and cause a portion of the luminous flux that will block the light loss. Other combinations of coating layers may of course be possible.

在圖4中說明本發明之該裝置的另一實施例。Another embodiment of the apparatus of the present invention is illustrated in FIG.

因此,在此實施例中,一包含一覆晶LED 2之發光裝置1配置於一子基板3上。在LED 2上,基板4b仍存在。一具有反射功能性之塗佈層7配置於發光裝置1之橫向表面6上,使得光不經由該發光裝置之橫向表面6實質上逸出。實情為,光經反射以經由基板4b之頂部表面8最終離開。在圖4中,展示三條光線路徑。光線路徑I指示光在LED中進行導波至由塗層背向反射之邊緣。光線路徑II展示在側面反射之情況下的穿過藍寶石基板之光路徑。光線路徑III展示在不與側面相互作用之情況下的直接發射光線路徑。Therefore, in this embodiment, a light-emitting device 1 including a flip-chip LED 2 is disposed on a sub-substrate 3. On the LED 2, the substrate 4b still exists. A coating layer 7 having reflective functionality is disposed on the lateral surface 6 of the illumination device 1 such that light does not substantially escape through the lateral surface 6 of the illumination device. Instead, the light is reflected to eventually exit through the top surface 8 of the substrate 4b. In Figure 4, three ray paths are shown. The ray path I indicates that light is guided in the LED to the edge that is reflected back from the coating. Light path II shows the light path through the sapphire substrate with side reflections. Ray Path III shows the direct emission ray path without interaction with the sides.

因此,不同反射塗佈層、吸收塗佈層、有色塗佈層、漫射塗佈層及發光塗佈層以及塗佈層之組合可存在於橫向表面上。亦有可能僅塗佈該表面之部分。LED與諸如藍寶石之基板及磷光體的組合亦為可能的。Therefore, a combination of different reflective coating layers, absorption coating layers, colored coating layers, diffusing coating layers, and luminescent coating layers and coating layers may be present on the lateral surfaces. It is also possible to coat only a portion of the surface. Combinations of LEDs with substrates such as sapphire and phosphors are also possible.

在一漫射塗佈層中,主要在自其光路徑之微小偏差的情況下透射入射光(少量入射光可經受多個散射事件且仍被反射)。此漫射性(diffusivity)有助於擾亂依賴於角度的顏色效應,亦即,使不同位置及角度之光混合。較佳地,側面塗層具有有限的光學厚度,諸如10μm至100μm,但此並非嚴格必要的。在彼狀況下,光源面積並未由於散射事件而顯著放大,其中可將散射中心視作光線之新點源。In a diffuse coating layer, incident light is transmitted primarily with minor deviations from its light path (a small amount of incident light can be subjected to multiple scattering events and still be reflected). This diffusivity helps to disturb angle-dependent color effects, that is, to mix light at different locations and angles. Preferably, the side coating has a limited optical thickness, such as from 10 μm to 100 μm, but this is not strictly necessary. In this case, the area of the source is not significantly amplified by the scattering event, and the center of the scattering can be considered as a new source of light.

在另一實施例中,對側面塗層進行塗色以使其吸收藍色光且透射黃色或琥珀色或紅色光。歸因於側面塗層,大角度處之藍色光洩漏受到抑制,而仍透射經轉換之光。藍色光吸收與反射側面塗層相比將造成較低效率。然而,將更高效地使用經轉換之光,因為其可容易地自pcLED提取,亦自側面提取。In another embodiment, the side coating is painted to absorb blue light and transmit yellow or amber or red light. Due to the side coating, blue light leakage at large angles is suppressed while still transmitting converted light. Blue light absorption will result in lower efficiency compared to reflective side coatings. However, the converted light will be used more efficiently because it can be easily extracted from the pcLED and also extracted from the side.

在另一實施例中,涵蓋針對值得考慮之波長的吸收側面塗層,其通常意謂塗層針對可見光為吸收的,亦即,塗層為黑色的。此狀況由於明顯的效率原因而為較不佳的。然而,自側面之光洩漏受到高效抑制,但此適用於藍色光及經轉換之光兩者(除非經轉換之光在紅外線中,假設黑色塗層在IR中為透明的)。In another embodiment, an absorbent side coating for wavelengths worth considering is contemplated, which generally means that the coating is absorbent for visible light, that is, the coating is black. This condition is less favorable for obvious efficiency reasons. However, light leakage from the side is highly inhibited, but this applies to both blue and converted light (unless the converted light is in the infrared, assuming the black coating is transparent in IR).

在另一實施例中,發光裝置具有發光側面塗層,其中藍色光經(部分)吸收且轉換至較高波長且再發射。側面塗層可含有與Lumiramic磷光體材料類似的磷光體顆粒(例如,部分轉換白色的YAG:Ce)。側面塗層亦可含有與Lumiramic材料不同的磷光體顆粒,例如,紅色磷光體含有側面塗層以便使自Lumiramic磷光體之白色光發射在顏色上更暖,亦即,暖白色組態。In another embodiment, the illumination device has a luminescent side coating wherein the blue light is (partially) absorbed and converted to a higher wavelength and re-emitted. The side coatings may contain phosphor particles similar to Lumiramic phosphor materials (eg, partially converted white YAG:Ce). The side coating may also contain phosphor particles that are different from the Lumiramic material. For example, the red phosphor contains a side coating to make the white light emission from the Lumiramic phosphor warmer in color, that is, a warm white configuration.

在圖5中說明本發明之該裝置的另一實施例。Another embodiment of the apparatus of the present invention is illustrated in FIG.

因此,在此實施例中,一包含一覆晶LED 2之側面發射發光裝置1配置於一子基板3上。一Lumiramic磷光體4a配置於LED 2上。一反射光之反射體4c配置於該磷光體上。橫向表面6之塗層防止光自一或多個側面之透射,且反射並重複利用(recycle)此光,以便將其透射至未經塗佈的側面。對於正方形Lumiramic,可塗佈僅一個側向表面,或者兩個表面或三個表面或該等表面中之每一者的部分。舉例而言,亦可將Lumiramic之一轉角保持敞開以自彼轉角區域發射光。側面反射塗層及頂部反射塗層可形成一單一層,諸如一高散射反射塗佈層。Therefore, in this embodiment, a side-emitting light-emitting device 1 including a flip-chip LED 2 is disposed on a sub-substrate 3. A Lumiramic phosphor 4a is disposed on the LED 2. A reflected light reflector 4c is disposed on the phosphor. The coating of the lateral surface 6 prevents transmission of light from one or more sides and reflects and recycles the light to transmit it to the uncoated side. For a square Lumiramic, only one lateral surface, or two surfaces or three surfaces or portions of each of the surfaces may be coated. For example, one of the Lumiramic corners can also be left open to emit light from the corner area. The side reflective coating and the top reflective coating can form a single layer, such as a highly scattering reflective coating layer.

在1×1mm組態之一實施例中,在250μm之磷光體厚度,及未經塗佈之側面發射體之100%的內腔功效的情況下,內腔功效為第一側向表面經塗佈LED之95%,第二側向表面經塗佈LED之78%,及第三側向表面經塗佈LED之56%。光之部分因此在LED中損失,但迫使剩餘通量穿過較小區域且至特定側面。側向表面之亮度因此增大。此在(例如)背光應用或光導照明器具設計中係重要的,其中光應有效地耦合至薄的光導件(lightguide)中,以便使光源定位在光導板之側面處。In one embodiment of a 1 x 1 mm configuration, the lumen efficiency is the first lateral surface coated with a phosphor thickness of 250 μm and a 100% lumen efficiency of the uncoated side emitter. 95% of the cloth LED, the second lateral surface is coated with 78% of the LED, and the third lateral surface is coated with 56% of the LED. The portion of the light is therefore lost in the LED, but forces the remaining flux to pass through the smaller area and to the particular side. The brightness of the lateral surface is thus increased. This is important in, for example, backlighting applications or light guide lighting fixture designs where light should be effectively coupled into a thin light guide to position the light source at the sides of the light guide panel.

在圖6中說明本發明之該裝置的又一實施例。Yet another embodiment of the apparatus of the present invention is illustrated in FIG.

在側面發射發光裝置之此實施例(與實施例5類似)中,一基板仍存在於磷光體下方之LED上。塗佈層僅存在於LED及基板上,不存在於磷光體上。In this embodiment of the side-emitting light-emitting device (similar to Example 5), a substrate is still present on the LED below the phosphor. The coating layer is only present on the LED and the substrate and is not present on the phosphor.

作為一替代,反射體可直接配置於基板上。塗層可在藉由使用反射側面塗層而自LED基板側面無大量藍色光洩漏的情況下存在於基板之橫向表面上。磷光體亦可延伸超過LED基板面積(其尺寸過大)。As an alternative, the reflector can be disposed directly on the substrate. The coating can be present on the lateral surface of the substrate without the use of a reflective side coating that does not leak a significant amount of blue light from the side of the LED substrate. The phosphor can also extend beyond the area of the LED substrate (its size is too large).

然而,側面發射發光裝置亦可具有其他類型之塗佈層,諸如漫射塗佈層或發光塗佈層。藉由使用漫射側面塗層,側面發射之角度及光譜分布可受影響,(例如)以使其更均一。However, the side-emitting light-emitting device may also have other types of coating layers, such as a diffuse coating layer or a light-emitting coating layer. By using a diffuse side coating, the angle of the side emission and the spectral distribution can be affected, for example, to make it more uniform.

藉由使用吸收藍色光且透射經轉換之光(例如,琥珀色光)之側面塗層,可在高色純度之情況下製成完全轉換側面發射體。By using a side coating that absorbs blue light and transmits converted light (eg, amber light), a fully converted side emitter can be made with high color purity.

藉由在兩個側面處施配,可在不同側向表面處實現不同光學功能性,例如,可在第一、第二或第三側向表面上添加一反射塗層,且可在其他側面上添加一藍色吸收塗層及一經轉換之光發射有色塗層。Different optical functionality can be achieved at different lateral surfaces by dispensing at both sides, for example, a reflective coating can be added to the first, second or third lateral surface, and on the other side A blue absorbing coating is added and a converted light-emitting colored coating is applied.

因此,在另一實施例中,在LED之至少一側面上,沈積一反射側面塗層,在其他側面上,沈積一有色側面塗層。此可用以產生一具有一個、兩個或三個發射側向表面之高色純度側面發射完全轉換LED。Thus, in another embodiment, a reflective side coating is deposited on at least one side of the LED and a colored side coating is deposited on the other side. This can be used to produce a high color purity side emission fully converted LED having one, two or three emitting lateral surfaces.

磷光體塗佈LED(pcLED)(例如)在諸如聚光燈、閃光LED模組、投影顯示及汽車前燈之高亮度或光展量受限應用中特別有用。Phosphor coated LEDs (pcLEDs) are particularly useful, for example, in high brightness or light spread limited applications such as spotlights, flash LED modules, projection displays, and automotive headlamps.

對於此等應用中之一些(例如,在可調聚光燈中或在發光成一弧形之車輛前燈中),LED需要可個別定址,因此每一單獨LED可按使用者/情況所需而接通/切斷或調暗。For some of these applications (for example, in an adjustable spotlight or in a vehicle headlight that illuminates into a curved shape), the LEDs need to be individually addressable, so each individual LED can be turned on as desired by the user/condition / cut or dim.

在可個別定址陣列中之LED陣列之情況下的問題中的一者為,一LED之泵浦光(pump light)可容易地到達該陣列中之一相鄰LED的磷光體。此可(例如)使燈提供錯誤的輸出光譜或LED在前燈中接通,而其本應處於切斷狀態中。One of the problems in the case of LED arrays that can be individually addressed in an array is that the pump light of one LED can easily reach the phosphor of one of the adjacent LEDs in the array. This can, for example, cause the lamp to provide an erroneous output spectrum or the LED is turned "on" in the headlights, which should be in the off state.

在圖7中說明本發明之該裝置的又一實施例。Yet another embodiment of the apparatus of the present invention is illustrated in FIG.

在此實施例中,塗佈具有變化顏色之發光裝置的一陣列。Lumiramic磷光體用以獲得R=紅色光、G=綠色光及W=白色光,而藍寶石基板B用以自發光裝置獲得藍色光。反射塗層配置於發光裝置周圍及之間的橫向表面上,使得發光裝置甚至共用塗佈層。In this embodiment, an array of illumination devices having varying colors is applied. The Lumiramic phosphor is used to obtain R = red light, G = green light, and W = white light, and the sapphire substrate B is used to obtain blue light from the light-emitting device. The reflective coating is disposed on the lateral surface around and between the light emitting devices such that the light emitting device even shares the coating layer.

陣列可為1維或2維的。LED之間的間隙可藉由毛細管力或藉由填塗(plotting)以反射塗層填充。LED之間的間隙亦可以一具有不同功能性之層(諸如,透明、發光、漫射、有色或發光層)部分填充或填充。可同時驅動該等LED(諸如,當串聯置放時),或可獨立驅動該等LED。陣列亦可具有同一顏色,且塗層可僅配置於裝置之橫向表面上,使得塗層不在裝置之間共用。陣列亦可由各自具有其個別側面塗層之LED組成,在彼狀況下,不共用其塗佈層。The array can be 1 or 2 dimensional. The gap between the LEDs can be filled with a reflective coating by capillary force or by plotting. The gap between the LEDs can also be partially filled or filled with a layer of different functionality, such as a transparent, luminescent, diffusing, colored or luminescent layer. The LEDs can be driven simultaneously (such as when placed in series), or the LEDs can be driven independently. The arrays can also be of the same color and the coating can be disposed only on the lateral surface of the device such that the coating is not shared between the devices. The array may also be composed of LEDs each having its individual side coatings, in which case the coating layer is not shared.

詳言之,涵蓋一具有紅色完全轉換Lumiramic、綠色完全轉換Lumiramic、一具有基板之藍色LED,及視情況一部分轉換白色Lumiramic之LED陣列。大體而言,各種磷光體及/或基板之厚度可變化。側面塗層可容納該等高度差。反射塗層將抑制LED之間的光學串擾,以在LED可個別定址時產生具有廣泛範圍之高純度顏色之LED陣列。此產生一具有顏色混合之極大窗(亦即,自非常純的顏色至色圖中之跨區顏色範圍內的此等顏色之任何混合)的光源。此對於(例如)聚光燈之顏色可控LED光源或全面照明光源為重要的。In particular, a LED array with a red fully converted Lumiramic, a green fully converted Lumiramic, a blue LED with a substrate, and optionally a white Lumiramic is included. In general, the thickness of various phosphors and/or substrates can vary. The side coating can accommodate these height differences. The reflective coating will inhibit optical crosstalk between the LEDs to produce an array of LEDs having a wide range of high purity colors when the LEDs are individually addressable. This produces a light source with a color mixing maximum window (i.e., any mixture of such colors from a very pure color to a spanned color range in the color map). This is important for, for example, a color controlled LED source or a full illumination source for a spotlight.

當小距離上需要光學混合時,可使LED之間的側面塗層透明或漫射,然而在彼狀況下,LED之間的光學串擾將影響效能。舉例而言,當僅紅色LED開啟時,自此LED所產生之藍色光亦將能夠激發相鄰綠色磷光體以亦產生一些綠色。When optical mixing is required over a small distance, the side coating between the LEDs can be made transparent or diffuse, however, in some cases, optical crosstalk between the LEDs will affect performance. For example, when only the red LED is turned on, the blue light generated from this LED will also be able to excite adjacent green phosphors to also produce some green.

為防止此串擾同時仍最大化混合能力,可在LED之間塗覆有色或發光著色塗層,其吸收自一LED行進至下一LED的藍色光。在發光塗層之狀況下,此藍色光將再次轉換至另一顏色。To prevent this crosstalk while still maximizing the mixing capability, a colored or luminescent colored coating can be applied between the LEDs that absorbs the blue light that travels from one LED to the next. In the case of a luminescent coating, this blue light will again be converted to another color.

在另一實施例中,可使用正方形陣列,諸如2×2陣列。或者,替代1×4陣列,亦可類似地製成較大陣列,諸如具有交替RGBW、GBWR、BWRG、WRGB(R=紅色、G=綠色、B=藍色且W=白色)顏色之4×4陣列。In another embodiment, a square array, such as a 2 x 2 array, can be used. Alternatively, instead of a 1×4 array, a larger array can be similarly made, such as 4× with alternating RGBW, GBWR, BWRG, WRGB (R=red, G=green, B=blue, and W=white) colors. 4 arrays.

在又一實施例中,藉由在一單一LED上塗覆磷光體陣列且使用側面塗層,可以高色純度區域來細分LED,其中x、y顏色對應於色圖中之紅色、綠色及藍色位置而定座標。自此等有色區域之光發射將視至LED之距離而混合。優點為,顏色可自純RGB顏色製成,以便獲得可經組合且與諸如LCD背光或投影顯示之應用中之RGB彩色濾光片陣列匹配的白色LED。(YAG:Ce部分轉換Lumiramic為未自混合純色建置之白色LED,且因此不太適用於與彩色濾光片組合)。可使磷光體之間的區域透明或漫射以便促成光混合。外側塗層較佳地為反射的,以便最小化LED之側面處的顏色遮蔽。In yet another embodiment, the LED can be subdivided by a high color purity region by coating the phosphor array on a single LED and using a side coating, where the x, y colors correspond to the red, green, and blue colors in the color map. Location-dependent coordinates. Light emission from such colored areas will be mixed depending on the distance to the LED. Advantageously, the colors can be made from pure RGB colors to obtain white LEDs that can be combined and matched to an array of RGB color filters in applications such as LCD backlights or projection displays. (YAG: Ce partial conversion Lumiramic is a white LED that is not self-mixing solid color, and therefore is not suitable for combination with color filters). The area between the phosphors can be made transparent or diffuse to promote light mixing. The outer coating is preferably reflective to minimize color masking at the sides of the LED.

在另一實施例中,塗佈側面發射Lumiramic LED的陣列。替代將具有側面塗層之個別完全轉換側面發射體彼此接近地置放,相鄰的LED可經置放以共用側面塗層。在彼狀況下,可將側面塗層視作相鄰LED之間的界面塗層,且可一起更靠近地置放LED。藉由使用反射側面塗層,LED之間的串擾得以抑制,以達成在可自高純度個別顏色變動至此等顏色之任何混合的發射之情況下的LED陣列。In another embodiment, an array of side-emitting Lumiramic LEDs is coated. Instead of placing individual fully converted side emitters with side coatings in close proximity to each other, adjacent LEDs can be placed to share a side coating. In this case, the side coating can be considered as an interfacial coating between adjacent LEDs, and the LEDs can be placed closer together. By using a reflective side coating, crosstalk between the LEDs is suppressed to achieve an array of LEDs that can be varied from high purity individual colors to any mixed emission of such colors.

倘若不需要個別顏色且需要最佳顏色混合,則可使LED之間的塗層透明、漫射、有色或發光。在前兩個選項中,藍色光及經轉換之光兩者可進行導波至相鄰LED。在後兩個選項中,將(至少部分地)吸收藍色光,且經轉換之光將能夠進行導波至相鄰像素且與其混合。If individual colors are not required and optimal color mixing is required, the coating between the LEDs can be made transparent, diffuse, colored or illuminated. In the first two options, both blue light and converted light can be guided to adjacent LEDs. In the latter two options, blue light will be (at least partially) absorbed, and the converted light will be able to conduct waves to and mix with adjacent pixels.

在另一實施例中,反射側面塗層置放於具有磷光體表面上之線-柵格起偏結構的Lumiramic磷光體上。在彼狀況下,阻礙無起偏結構之磷光體的側面洩漏未偏振光。In another embodiment, the reflective side coating is placed on a Lumiramic phosphor having a line-grid polarizing structure on the surface of the phosphor. In this case, the side of the phosphor that blocks the unpolarized structure leaks unpolarized light.

總之,本發明可應用於通常使用磷光體轉換之LED組態中。然而,側面塗佈技術亦可應用於正常有色(非磷光體轉換)LED。LED適用於閃光燈、汽車前燈或尾燈、背光或全面照明(諸如,聚光燈)。In summary, the invention is applicable to LED configurations that typically use phosphor conversion. However, the side coating technique can also be applied to normally colored (non-phosphor converted) LEDs. LEDs are suitable for flashlights, automotive headlights or taillights, backlights or full lighting (such as spotlights).

本發明亦可應用於該等LED之陣列中,例如,用於汽車前向照明之LED陣列中或用於投影照明目的之RGB LED陣列中或全面照明顏色可調(聚光)燈中。The invention can also be applied to arrays of such LEDs, for example, in LED arrays for automotive forward illumination or in RGB LED arrays for projection illumination purposes or in full illumination color tunable (concentrated) lamps.

如本申請案中所使用,本文中縮寫為「LED」之術語「發光二極體」指代熟習此項技術者已知之任何類型之發光二極體或雷射發射二極體(laser emitting diode),其包括(但不限於)基於無機之LED、基於有機小分子之LED(smOLED)及基於聚合之LED(polyLED)。As used in this application, the term "light emitting diode" as used herein in the abbreviation "LED" refers to any type of light emitting diode or laser emitting diode known to those skilled in the art (laser emitting diode). It includes, but is not limited to, inorganic-based LEDs, organic small molecule-based LEDs (smOLEDs), and polymer-based LEDs (polyLEDs).

用於本發明中之LED可自UV範圍、經由可見範圍將任何顏色之光發射至IR範圍。然而,由於波長轉換材料按照慣例由紅色位移轉換光,因此經常需要使用發射UV/藍色範圍中之光的LED,因為該光可本質上轉換成任何其他顏色。The LEDs used in the present invention can emit light of any color to the IR range from the UV range, via the visible range. However, since the wavelength converting material conventionally converts light by red displacement, it is often desirable to use an LED that emits light in the UV/blue range because the light can be essentially converted to any other color.

LED晶片較佳地具有「覆晶」類型,其中兩個引線定位於晶片之同一側面上。此設計促進波長轉換體在裝置之發光表面上的配置。然而,亦涵蓋其他類型之LED晶片用於本發明中。The LED chip preferably has a "flip-chip" type in which two leads are positioned on the same side of the wafer. This design facilitates the configuration of the wavelength converting body on the light emitting surface of the device. However, other types of LED chips are also contemplated for use in the present invention.

用於本發明中之波長轉換材料較佳為螢光及/或磷光材料,其由未經轉換之光變成激發的,且在鬆弛後即發射光。光學組件通常為磷光體材料,例如,諸如Lumiramic磷光體之陶瓷磷光體。The wavelength converting material used in the present invention is preferably a fluorescent and/or phosphorescent material which is excited by unconverted light and which emits light upon relaxation. The optical component is typically a phosphor material, such as a ceramic phosphor such as a Lumiramic phosphor.

完全轉換LED為所有電產生之光轉換至所要顏色之情況下的LED,而部分轉換LED指代電產生之光的僅部分轉換至另一顏色之情況下的LED。The fully converted LED is the LED in the case where all of the electrically generated light is converted to the desired color, and the partially converted LED refers to the LED in the case where only the portion of the electrically generated light is converted to another color.

本發明之另一態樣係關於一種根據本發明之用於產生發光裝置的方法。Another aspect of the invention pertains to a method for producing a light-emitting device in accordance with the present invention.

在下文中,將更詳細地描述用於在發光裝置之橫向表面上塗覆塗層的方法。Hereinafter, a method for applying a coating on a lateral surface of a light-emitting device will be described in more detail.

發光裝置1包含一配置於一子基板3上之發光二極體(LED)2。在此子基板3上添加一液體塗層組合物。可以預定量塗覆該塗層組合物,使得毛細管力可輸送該液體塗層組合物以覆蓋發光裝置之橫向表面。此量通常為一小滴或數小滴。然而,視所要之塗層的厚度而定,此量亦可更大。LED裝置之每1×1mm面積的此液體體積可在0.01與100微升之間,較佳在0.1與10微升之間,且更佳在0.5與5微升之間。固體體積通常歸因於塗層之固化期間的收縮及/或溶劑之移除而為較小的。The light-emitting device 1 includes a light-emitting diode (LED) 2 disposed on a sub-substrate 3. A liquid coating composition is added to the sub-substrate 3. The coating composition can be applied in a predetermined amount such that capillary forces can deliver the liquid coating composition to cover the lateral surface of the light emitting device. This amount is usually a small drop or a few droplets. However, depending on the thickness of the desired coating, this amount can also be greater. The liquid volume per 1 x 1 mm area of the LED device can be between 0.01 and 100 microliters, preferably between 0.1 and 10 microliters, and more preferably between 0.5 and 5 microliters. The volume of solids is typically small due to shrinkage during curing of the coating and/or removal of solvent.

在圖8a至圖8c中,展示發光裝置之橫向表面之塗層的示意圖。因此,圖8a說明接近於LED晶片所置放之一滴液體。在圖8b中,該液滴藉由毛細管力而開始塗佈該裝置之橫向表面。圖8c說明已達成整個橫向表面之塗佈。In Figures 8a to 8c, a schematic representation of a coating of the lateral surface of the illumination device is shown. Thus, Figure 8a illustrates one drop of liquid placed close to the LED wafer. In Figure 8b, the droplet begins to coat the lateral surface of the device by capillary force. Figure 8c illustrates that the coating of the entire lateral surface has been achieved.

塗層組合物在子基板上、接近於發光裝置之橫向表面,或與該橫向表面接觸的位置處置放,使得塗層組合物藉由毛細管力將覆蓋該橫向表面。塗層組合物可(例如)距發光裝置之橫向表面0mm至2mm或距該表面0.5mm至1mm而置放。The coating composition is disposed on the submount, adjacent to, or in contact with, the lateral surface of the illuminating device such that the coating composition will cover the lateral surface by capillary forces. The coating composition can be placed, for example, from 0 mm to 2 mm from the lateral surface of the illuminating device or from 0.5 mm to 1 mm from the surface.

當以該方式塗覆塗層組合物時,毛細管力將更快速地促進發光裝置之橫向邊緣的塗佈。When the coating composition is applied in this manner, capillary forces will promote coating of the lateral edges of the illuminating device more rapidly.

為添加指定位置所需之指定量的塗層組合物,可使用施配器。此施配器可為針筒或針或噴嘴系統。沈積塗層之最簡單方法為,藉由使用具有控制器之針筒、針或噴嘴來塗覆一滴塗層組合物以施配所要小滴體積,通常藉由調節施配時間及壓力。A dispenser can be used to add the specified amount of coating composition required to specify the location. This dispenser can be a syringe or a needle or nozzle system. The easiest way to deposit a coating is to apply a drop of coating composition by using a syringe, needle or nozzle with a controller to dispense the desired droplet volume, usually by adjusting the dispensing time and pressure.

然而,亦可藉由印刷或噴灑塗層組合物,諸如藉由使用網版印刷或噴墨噴嘴或噴灑噴嘴達成該添加。However, this addition can also be achieved by printing or spraying the coating composition, such as by using screen printing or ink jet nozzles or spray nozzles.

可藉由使用毛細管力塗佈橫向表面來促進塗佈。塗層通常以約1或2秒藉由自濕化而出現。Coating can be facilitated by coating the lateral surface with capillary force. The coating typically occurs by self-wetting in about 1 or 2 seconds.

亦可藉由在發光裝置周圍將液體塗層組合物填塗於子基板上而達成塗佈,從而迫使流體接觸填塗區域。在此狀況下,噴嘴或針以受控及可程式化方式平移,同時控制此移動期間的施配。若塗層流體在待塗佈之裝置材料上具有不良濕化且其提供一僅塗佈特定側面之方式,則此為優點。不良濕化防止自濕化,但施配填塗迫使流體進行散佈。缺點為所需之更關鍵置放精確度及額外處理時間。Coating can also be achieved by applying a liquid coating composition to the sub-substrate around the illuminating device to force the fluid to contact the fill region. In this case, the nozzle or needle translates in a controlled and programmable manner while controlling the dispensing during this movement. This is an advantage if the coating fluid has poor wetting on the material of the device to be coated and it provides a means of coating only certain sides. Poor wetting prevents self-wetting, but dispensing fill forces the fluid to spread. The disadvantages are the more critical placement accuracy and additional processing time required.

亦可(例如)藉由以接近於由短距離隔開且以直線置放之多個LED裝置的直線移動噴嘴,且施配同時以直線移動噴嘴而實現填塗與自濕化的組合。所施配之流體與LED裝置之邊緣相互作用且在其圓周處自濕化。Combinations of filling and self-wetting can also be achieved, for example, by moving the nozzles in a line that is close to a plurality of LED devices that are spaced apart by a short distance and placed in a straight line, and that dispenses while moving the nozzles in a straight line. The applied fluid interacts with the edges of the LED device and self-wetting at its circumference.

塗層組合物為液體組合物,其可含有溶膠-凝膠單體,如同烷基烷氧矽烷,諸如甲基三甲氧基矽烷或聚矽氧樹脂。溶膠-凝膠單體可在可含有水及/或醇之液體中(部分)水解及聚合。此類型之流體因此通常為親水性的(極性的)。其可含有各種量之一或多種溶劑以調諧流體之黏度。聚矽氧樹脂通常為呈非固化形式之流體且可同樣地使用,或視情況,添加溶劑以調諧流體之黏度。聚矽氧樹脂存在於來自各種供應商之許多化學組合物及材料性質中。黏度以及材料性質可在固化(自彈性凝膠變動至硬性聚矽氧塗層)之後變化。視聚矽氧樹脂之類型而定,該溶劑之一實例可為二甲苯。該等聚矽氧流體通常(但未必)為非極性的。The coating composition is a liquid composition which may contain a sol-gel monomer such as an alkyl alkoxysilane such as methyltrimethoxydecane or a polyoxyxylene resin. The sol-gel monomer can be (partially) hydrolyzed and polymerized in a liquid which can contain water and/or alcohol. This type of fluid is therefore generally hydrophilic (polar). It can contain one or more solvents in various amounts to tune the viscosity of the fluid. The polyoxyxene resin is typically a fluid in a non-cure form and can be used similarly or, as the case may be, to adjust the viscosity of the fluid. Polyoxyxylene resins are found in many chemical compositions and materials properties from a variety of suppliers. Viscosity and material properties can vary after curing (from the change of the elastomeric gel to the hard polyoxyxide coating). Depending on the type of polyoxyxene resin, an example of such a solvent may be xylene. The polyoxygenated fluids are typically (but not necessarily) non-polar.

流體為極性或非極性的程度可受確切的流體組合物(諸如,所使用之溶劑之類型及量)影響。The extent to which the fluid is polar or non-polar can be affected by the exact fluid composition, such as the type and amount of solvent used.

用於本發明中之塗層組合物為凝固後即形成一散射、吸收、發光、漫射或反射塗佈層(亦即,一光活性塗佈層)之塗層組合物。存在可用於此目的之組合物的許多實例。The coating composition used in the present invention is a coating composition which forms a scattering, absorbing, luminescent, diffusing or reflecting coating layer (i.e., a photoactive coating layer) upon solidification. There are many examples of compositions that can be used for this purpose.

在本發明中,藉由「固體」,亦瞭解,塗佈層可為非晶形的。In the present invention, it is also understood by "solid" that the coating layer can be amorphous.

通常,散射、吸收、發光、漫射或反射顆粒分散於較佳具有低黏度之組合物中。Typically, the scattering, absorbing, luminescent, diffusing or reflecting particles are dispersed in a composition which preferably has a low viscosity.

舉例而言,(諸如)金屬氧化物之散射顆粒,反射、漫射或發光金屬片及/或吸收染料或顏料可分散於塗層組合物中。For example, scattering particles such as metal oxides, reflective, diffusing or luminescent metal flakes and/or absorbing dyes or pigments may be dispersed in the coating composition.

舉例而言,(諸如)具有次微米直徑之TiO2 顆粒可用作無機散射顆粒。藉由使用適當裝載,諸如5v%至60v%之顆粒,可在超過(例如)5微米之厚度處實現低損失散射反射塗層。For example, TiO 2 particles having, for example, a submicron diameter can be used as the inorganic scattering particles. By using a suitable loading, such as 5v% to 60v% of the particles, a low loss scattering reflective coating can be achieved at a thickness exceeding, for example, 5 microns.

塗層組合物經凝固以在橫向表面上獲得一固體塗佈層。凝固可藉由任何凝固動作(例如,藉由對塗層進行空氣乾燥以移除溶劑,及/或通常在高溫下固化塗層)而發生。作為一實例,對於溶膠-凝膠單體之凝固,可將塗層乾燥歷時約10分鐘以自塗層蒸發大多數溶劑(諸如,水及甲醇)。接著,塗層在90℃下進一步乾燥歷時20min,且此後,藉由在200℃下固化歷時1hr而使溶膠凝膠固化以形成脆性甲基矽酸酯(methyl silicate)網路。The coating composition is solidified to obtain a solid coating layer on the lateral surface. Coagulation can occur by any coagulation action (eg, by air drying the coating to remove the solvent, and/or typically curing the coating at elevated temperatures). As an example, for solidification of a sol-gel monomer, the coating can be dried for about 10 minutes to evaporate most of the solvent (such as water and methanol) from the coating. Next, the coating was further dried at 90 ° C for 20 min, and thereafter, the sol gel was cured by curing at 200 ° C for 1 hr to form a brittle methyl silicate network.

塗佈層之典型厚度為10μm至500μm。The coating layer typically has a thickness of from 10 μm to 500 μm.

因此,選擇塗層組合物,使得在凝固後,所獲得之固體組合物即具有以下光學功能性或該等功能性之組合:通常藉由使用散射顏料(諸如,如同TiO2 、ZrO2 及Al2 O3 之金屬氧化物顆粒)之反射 功能性。一較不佳之替代為藉由使用金屬片或顆粒或孔。藉由以具有該功能性之塗層組合物來塗佈橫向邊緣,光透射穿過側面塗層將為小的,且將反射大多數光(例如,95%)。Thus, the coating composition is selected such that upon solidification, the solid composition obtained has the following optical functionality or a combination of such functions: typically by using scattering pigments (such as, for example, TiO 2 , ZrO 2 and Al) 2 O 3 metal oxide particles) reflective functionality. A less preferred alternative is by using metal flakes or granules or holes. By coating the lateral edges with a coating composition having this functionality, the light transmission through the side coating will be small and will reflect most of the light (eg, 95%).

功能性之此選擇解決背景章節中所描述之問題1至4。缺陷為,小量反射側面光可能由LED再吸收且損失。又,頂部表面之亮度增大,例如,在具有120微米厚之磷光體之側面塗佈1×1mm LED晶粒上實現法線方向上之具有10%至15%的典型亮度增益。This choice of functionality solves the problems 1 to 4 described in the background section. The drawback is that a small amount of reflected side light may be reabsorbed and lost by the LED. Again, the brightness of the top surface is increased, for example, by coating a 1 x 1 mm LED die on the side of a 120 micron thick phosphor to achieve a typical brightness gain of 10% to 15% in the normal direction.

藉由使用散射顏料(諸如,如同TiO2 、ZrO2 、Al2 O3 及SiO2 之金屬氧化物顆粒)之漫射 功能性。此允許穿過側面塗層之(部分)光透射,其中正向散射及背向散射之量可由顏料之體積濃度及粒徑以及塗層厚度控制。By using scattering pigments (such as TiO 2, ZrO 2, Al 2 O 3 and the metal oxide particles of SiO 2) of the diffusion functionality. This allows for (partial) light transmission through the side coating, wherein the amount of forward and backscattering can be controlled by the volume concentration and particle size of the pigment as well as the thickness of the coating.

此功能性部分解決上文所描述之問題1及2,但不解決問題3及4。益處為,與反射功能性相比,較少光導引回至(大體而言)有損LED。This functional part addresses the problems 1 and 2 described above, but does not solve problems 3 and 4. The benefit is that less light is directed back to (generally) lossy LEDs than reflective functionality.

使用有色顏料之有色 或光譜過濾功能性。通常,有色層將吸收藍色LED光且自磷光體透射經轉換之光。此解決尤其針對完全轉換Lumiramic之問題1,但不解決問題2、3及4。Use of colored or color pigment spectral filter functionality. Typically, the colored layer will absorb blue LED light and transmit the converted light from the phosphor. This solution is especially for problem 1 of fully converting Lumiramic, but does not solve problems 2, 3 and 4.

對於部分轉換,藍色光吸收藉由吸收過多藍色光而冒跨角度之顏色位移的風險。需要吸收特性之微調以致部分吸收藍色光洩漏來克服此問題。For partial conversion, the blue light absorbs the risk of color shift across the angle by absorbing too much blue light. Fine adjustment of the absorption characteristics is required so that partial absorption of blue light leakage overcomes this problem.

益處為與反射功能性相比之增大的總光通量。The benefit is an increased total luminous flux compared to the reflective functionality.

藉由使用吸收入射光通量光譜之顏料的吸收 功能性。此解決大多數問題,但將導致嚴重的光通量損失且將不增大頂部表面之亮度,且因此為較不佳的。吸收率可視吸收顏料或染料性質、濃度及層厚度而為完全的或僅部分的。By using the absorption functionality of the pigment that absorbs the incident light flux spectrum. This solves most of the problems, but will result in severe loss of luminous flux and will not increase the brightness of the top surface and is therefore less preferred. The absorbance can be complete or only partial depending on the nature, concentration and layer thickness of the absorbing pigment or dye.

藉由使用提供與磷光體相同或不同之發光光譜之發光顏料/顆粒的發光 功能性。經由側面之藍色光洩漏將被吸收且轉換至較高波長。此將解決尤其針對完全轉換磷光體之問題1,但不解決問題2、3及4。其亦略微增大光源面積。益處為與反射功能性相比之期望增大的總光通量。The luminescent functionality of luminescent pigments/particles that provide the same or different luminescence spectrum as the phosphor is used. Blue light leakage through the sides will be absorbed and converted to higher wavelengths. This will solve the problem 1 especially for fully converting phosphors, but does not solve problems 2, 3 and 4. It also slightly increases the area of the light source. The benefit is the desired increased total luminous flux compared to the reflective functionality.

因此,對於本發明之實施例,可視所要之功能性而考慮具有不同功能性之不同塗佈層的組合,或不同功能性可在同一塗層中組合,諸如,將漫射功能性與發光功能性組合。Thus, for embodiments of the present invention, combinations of different coating layers having different functionalities may be considered depending on the desired functionality, or different functionalities may be combined in the same coating, such as diffuse functionality and illuminating function. Sexual combination.

子基板及橫向表面可以變成極性的(或親水性的)之方式經預處理,且塗層組合物可為極性的(或親水性的)。親水性(極性)塗層組合物將接著由毛細管力促進以覆蓋經處理之子基板及橫向表面。藉由僅處理子基板及橫向表面之一部分以變成親水性的,有可能僅塗佈橫向表面之一些部分,如圖9中所展示。類似地,藉由在極性(或親水性)表面上使用非極性(或疏水性的)塗層組合物(諸如,大多數聚矽氧),可達成有限的流體散佈,或可達成非極性(或疏水性)表面上之良好散佈。因此,亦有可能處理子基板及橫向表面之部分以變成非極性的(或疏水性的),且因此,藉由使用極性(或親水性)塗層組合物,橫向表面之部分將無塗佈層。顯然,裝置之子基板及橫向側面表面之表面濕化條件可不等同,且可實現子基板或橫向側面上之較佳散佈。又,橫向側面表面通常由諸如LED材料、黏結材料、LED基板或磷光體之多個組件組成。此等各種材料之優先濕化可出現。舉例而言,若磷光體具有塗層流體之不良濕化條件,則不可實現磷光體之側面覆蓋或僅可實現磷光體之有限側面覆蓋,而(例如)可覆蓋黏結劑及LED晶粒。The submount and the lateral surface may be pretreated in a manner that becomes polar (or hydrophilic) and the coating composition may be polar (or hydrophilic). The hydrophilic (polar) coating composition will then be promoted by capillary forces to cover the treated sub-substrate and the lateral surface. By treating only a portion of the submount and the lateral surface to become hydrophilic, it is possible to coat only portions of the lateral surface, as shown in FIG. Similarly, by using a non-polar (or hydrophobic) coating composition (such as most polyoxo) on a polar (or hydrophilic) surface, limited fluid dispersion can be achieved, or non-polarity can be achieved ( Or hydrophobic) good dispersion on the surface. Therefore, it is also possible to process portions of the sub-substrate and the lateral surface to become non-polar (or hydrophobic), and therefore, by using a polar (or hydrophilic) coating composition, portions of the lateral surface will be uncoated. Floor. Obviously, the surface wetting conditions of the sub-substrate and the lateral side surfaces of the device may not be identical, and a better dispersion on the sub-substrate or lateral side may be achieved. Also, the lateral side surfaces are typically comprised of multiple components such as LED materials, bonding materials, LED substrates, or phosphors. Priority wetting of these various materials can occur. For example, if the phosphor has poor wetting conditions for the coating fluid, side coverage of the phosphor may not be achieved or only limited side coverage of the phosphor may be achieved, and for example, the binder and the LED die may be covered.

藉由調諧LED表面上之濕化條件(例如,藉由調諧LED裝置之氧電漿或UV臭氧處理)、所沈積之量,及/或藉由增大或調諧塗層組合物之黏度,或藉由添加具有較快蒸發作用之溶劑而達成用以僅塗佈橫向表面之部分的另一方式。By tuning the humidification conditions on the surface of the LED (eg, by tuning the oxygen plasma or UV ozone treatment of the LED device), the amount deposited, and/or by increasing or tuning the viscosity of the coating composition, or Another way to coat only portions of the lateral surface is achieved by adding a solvent having a faster evaporation effect.

原則上,可使用亦將覆蓋Lumiramic之頂部之技術(諸如,刮塗、旋塗、噴塗、浸塗或簾式塗佈)來沈積塗層組合物。尤其在塗覆反射塗層之狀況下,一抗濕層應配置於Lumiramic表面之頂部。若足夠抗濕存在,則在疏水性塗層組合物之狀況下,由於塗層在能量上不利於覆蓋抗濕頂部表面,因此塗層將傾向於流動至側面,從而在頂部不保留一薄層或僅保留一薄層。在頂部之反射塗層的一足夠薄的層將仍為部分透射的且可被允許。抗濕層可由一疏水性塗佈層(例如,磷光體之氟矽烷頂部表面處理的疏水性矽烷單層)組成。對於漫射、發光、有色塗層組合物,可允許頂部表面覆蓋。漫射頂部塗層可有助於重新分布光分布以達成更均一的跨角度顏色(color-over-angle)。發光或有色頂部塗層可有助於自完全轉換磷光體應用之頂部表面之減少的藍色光洩漏。In principle, the coating composition can be deposited using techniques that also cover the top of Lumiramic, such as knife coating, spin coating, spray coating, dip coating or curtain coating. Especially in the case of a reflective coating, a moisture resistant layer should be placed on top of the Lumiramic surface. If sufficient moisture resistance is present, in the case of a hydrophobic coating composition, since the coating is not energetically resistant to covering the wet top surface, the coating will tend to flow to the side so that no thin layer remains on the top Or just keep a thin layer. A sufficiently thin layer of the reflective coating at the top will still be partially transmissive and may be allowed. The moisture resistant layer may be comprised of a hydrophobic coating layer (e.g., a hydrophobic decane monolayer treated with a fluorodecane top surface of the phosphor). For diffuse, luminescent, colored coating compositions, the top surface coverage is allowed. Diffusing the top coating can help redistribute the light distribution to achieve a more uniform color-over-angle. A luminescent or colored top coat can help reduce the blue light leakage from the top surface of the fully converted phosphor application.

此在大量添加塗層組合物之情況下特別重要。抗濕層可為固體、液體或凝膠。其可為體積層(volume layer),但亦可為沈積於Lumiramic頂部表面上之單層(例如,自氣相已與磷光體表面進行反應之烴矽烷或氟基矽烷)。This is especially important in the case where a large amount of coating composition is added. The moisture resistant layer can be a solid, a liquid or a gel. It may be a volume layer, but may also be a single layer deposited on the top surface of Lumiramic (for example, a hydrocarbon decane or a fluorodecane that has reacted with the surface of the phosphor from the gas phase).

然而,避免頂部表面溢出之方法為較佳的,尤其對於反射塗層調配物。However, methods to avoid spillage of the top surface are preferred, especially for reflective coating formulations.

可選擇組合物之黏度,使得組合物足夠低以由毛細管力在發光裝置周圍容易地散佈。因此,黏度可在1mPa與100mPa之間。The viscosity of the composition can be chosen such that the composition is low enough to be easily spread by capillary forces around the illumination device. Therefore, the viscosity can be between 1 mPa and 100 mPa.

又,可藉由對流體及/或裝置加熱而降低流體之黏度。Also, the viscosity of the fluid can be reduced by heating the fluid and/or device.

藉由控制黏度,亦有可能控制由塗層組合物所塗佈之區域。舉例而言,若使用較低黏度,則塗層組合物將更容易地散佈且塗層將更快地出現。另一方面,若使用較高黏度,則塗層組合物將傾向於不太容易地散佈,且其將變得有可能僅塗佈橫向表面之一部分。It is also possible to control the area coated by the coating composition by controlling the viscosity. For example, if a lower viscosity is used, the coating composition will spread more easily and the coating will appear more quickly. On the other hand, if a higher viscosity is used, the coating composition will tend to spread less easily and it will become possible to coat only a portion of the lateral surface.

當在側向表面上達成良好濕化時,固體塗佈層之接觸角可在0度至45度之間。當由本塗佈方法達成低接觸角時,僅需要少量材料來塗佈橫向表面,此可為較佳的。When good wetting is achieved on the lateral surface, the contact angle of the solid coating layer can be between 0 and 45 degrees. When a low contact angle is achieved by the present coating method, only a small amount of material is required to coat the lateral surface, which may be preferred.

另外,此具有以下益處,光源將不顯著放大,仍可合理地控制側面塗層厚度(及因此光學性質),且較小應力歸因於大體出現在側面塗層之固化中的收縮應力將施加至側面塗層及LED裝置。可達到之尖銳輪廓具有對進入側面塗層之光進行導波的極小風險。In addition, this has the benefit that the light source will not be significantly magnified, the side coating thickness (and therefore the optical properties) can still be reasonably controlled, and the less stress is due to the shrinkage stress that would normally occur in the curing of the side coating. To the side coating and LED device. The sharp contour that can be achieved has a minimal risk of guiding the light entering the side coating.

因此,涵蓋使用塗層組合物之側面塗層的較不佳實施例,其展示側向表面或特定側向表面上之不良濕化。結果,側向表面處之接觸角將為大的(例如,在45度與90度之間,或甚至超過90度)。側向表面之表面覆蓋視施配量而可能為不完全的。藉由調諧所沈積之量,可控制經塗佈之區域或層。舉例而言,可僅覆蓋LED及黏結層,而不覆蓋Lumiramic磷光體之一實質部分。因而,可抑制光洩漏路徑1及2,而路徑3仍滲漏(leak through)。優點為,可自LED提取更多光,且側面光洩漏之歸因於黏結劑厚度變化的變化受到抑制。跨角度顏色效能仍可足夠用於實際使用。對於充分覆蓋,需要大量材料。又,對於有色、略微漫射或發光層,在此側面塗層中進行導波的高風險出現,其將在無實質光提取之情況下展開光,此情形為極其非吾人所樂見的。Thus, a less preferred embodiment of a side coating using a coating composition is disclosed that exhibits undesirable wetting on a lateral surface or a particular lateral surface. As a result, the contact angle at the lateral surface will be large (eg, between 45 and 90 degrees, or even more than 90 degrees). The surface coverage of the lateral surface may be incomplete depending on the amount of application. The coated regions or layers can be controlled by tuning the amount deposited. For example, it is possible to cover only the LED and the bonding layer without covering a substantial portion of the Lumiramic phosphor. Thus, the light leakage paths 1 and 2 can be suppressed, and the path 3 is still leaked through. The advantage is that more light can be extracted from the LED, and the side light leakage is suppressed due to changes in the thickness of the adhesive. Cross-angle color performance is still sufficient for practical use. For adequate coverage, a large amount of material is required. Also, for colored, slightly diffused or luminescent layers, there is a high risk of guided waves in this side coating which will unfold light without substantial light extraction, which is extremely undesirable for us.

在本發明之另一實施例中,在子基板上塗覆第二液體塗層組合物,使得其將覆蓋發光裝置之第二橫向表面的至少部分。第二塗層組合物經凝固以在第二橫向表面之至少一部分上獲得一第二固體塗佈層。類似地,多個塗佈層可彼此疊加地沈積。In another embodiment of the invention, the second liquid coating composition is applied to the submount such that it will cover at least a portion of the second lateral surface of the illumination device. The second coating composition is solidified to obtain a second solid coating layer on at least a portion of the second lateral surface. Similarly, a plurality of coating layers may be deposited on top of each other.

當發光裝置由第一塗佈層及第二塗佈層中之不同塗層組合物塗佈時,有可能達成具有反射、漫射、光譜過濾、發光及阻光光學功能性之不同固體塗佈層。因此,同一橫向表面可由具有同一或不同光學功能性之一個以上塗佈層塗佈。When the light-emitting device is coated by different coating compositions in the first coating layer and the second coating layer, it is possible to achieve different solid coatings with reflection, diffusion, spectral filtering, luminescence, and light blocking optical functionality. Floor. Thus, the same lateral surface can be coated by more than one coating layer having the same or different optical functionality.

因此,橫向表面之不同部分可具有不同光學功能性。Thus, different portions of the lateral surface can have different optical functionality.

配置於裝置之橫向表面上之塗層緊密接近橫向側面,大體上接觸。然而,歸因於收縮應力、不足的黏著力、熱應力,可破壞側面塗層與橫向側面(之部分)以及與子基板(之部分)的實體接觸。結果,一普通小間隙可存在於破壞接觸之處。此未必妨礙側面塗層之功能性。The coating disposed on the lateral surface of the device is in close proximity to the lateral side and is in substantial contact. However, due to shrinkage stress, insufficient adhesion, thermal stress, physical contact of the side coating with the lateral sides (parts) and with the sub-substrate (part of) can be disrupted. As a result, a small gap can exist where the contact is broken. This does not necessarily impede the functionality of the side coating.

即使已參考本發明之特定例示性實施例描述本發明,但許多不同更改、修改及其類似者將對熟習此項技術者變得顯而易見。所描述之實施例因此不欲限制如由所附申請專利範圍界定的本發明之範疇。Even though the invention has been described with reference to the specific exemplary embodiments of the invention, many variations, modifications, and the like will become apparent to those skilled in the art. The described embodiments are therefore not intended to limit the scope of the invention as defined by the appended claims.

1...發光裝置1. . . Illuminating device

2...覆晶發光二極體(LED)2. . . Flip chip light emitting diode (LED)

3...子基板3. . . Subsubstrate

4...光學組件4. . . Optical component

4a...磷光體/Lumiramic磷光體4a. . . Phosphor / Lumiramic Phosphor

4b...基板4b. . . Substrate

4c...反射體4c. . . Reflector

5...黏結層5. . . Bonding layer

6...橫向表面/橫向圓周表面6. . . Transverse surface / lateral circumferential surface

7...光活性塗佈層7. . . Photoactive coating layer

7a...第二塗佈層7a. . . Second coating layer

7b...第一塗佈層7b. . . First coating layer

8...頂部表面8. . . Top surface

I...光線集合I. . . Ray collection

II...光線集合II. . . Ray collection

III...光線集合III. . . Ray collection

IV...光線集合IV. . . Ray collection

圖1示意地說明本發明的一具有一Lumiramic磷光體之頂部發射發光裝置之一實施例的橫截面,其中橫向圓周表面由一反射塗佈層塗佈;Figure 1 is a schematic cross-sectional view showing an embodiment of a top emission illuminating device having a Lumiramic phosphor of the present invention, wherein the lateral circumferential surface is coated by a reflective coating layer;

圖2示意地說明本發明之一具有一為角形之Lumiramic磷光體的頂部發射發光裝置之另一實施例的橫截面,其中橫向圓周表面由一反射塗佈層塗佈;Figure 2 is a schematic cross-sectional view showing another embodiment of a top-emission illuminating device having an angular Lumiramic phosphor of the present invention, wherein the lateral circumferential surface is coated by a reflective coating layer;

圖3示意地說明本發明的一具有一Lumiramic磷光體之頂部發射發光裝置之另一實施例的橫截面,其中橫向圓周表面由兩個塗佈層塗佈;Figure 3 is a schematic cross-sectional view showing another embodiment of a top emission light-emitting device having a Lumiramic phosphor of the present invention, wherein the lateral circumferential surface is coated by two coating layers;

圖4示意地說明本發明的一具有一基板之頂部發射發光裝置之另一實施例的橫截面,其中橫向圓周表面由一反射塗佈層塗佈;Figure 4 is a schematic cross-sectional view showing another embodiment of a top-emission illuminating device having a substrate of the present invention, wherein the lateral circumferential surface is coated by a reflective coating layer;

圖5示意地說明本發明之一側面發射發光裝置之一實施例的橫截面,其中橫向圓周表面之部分由一反射塗佈層塗佈;Figure 5 is a schematic cross-sectional view showing an embodiment of a side-emitting light-emitting device of the present invention, wherein a portion of the lateral circumferential surface is coated by a reflective coating layer;

圖6示意地說明本發明的一具有一基板及一磷光體之側面發射發光裝置之一實施例的橫截面,其中橫向圓周表面之部分由一反射塗佈層塗佈;Figure 6 is a schematic cross-sectional view showing an embodiment of a side-emitting light-emitting device having a substrate and a phosphor of the present invention, wherein a portion of the lateral circumferential surface is coated by a reflective coating layer;

圖7示意地說明本發明的發光裝置之一陣列之一實施例的橫截面,其中橫向圓周表面之部分由一反射塗佈層塗佈;Figure 7 is a schematic cross-sectional view showing an embodiment of an array of light-emitting devices of the present invention, wherein a portion of the lateral circumferential surface is coated by a reflective coating layer;

圖8a至圖8c示意地說明一用於塗佈一發光裝置之橫向圓周表面之方法的透視圖;及8a to 8c schematically illustrate a perspective view of a method for coating a lateral circumferential surface of a light-emitting device; and

圖9說明本發明之一發光裝置之一實施例的透視圖,其中橫向圓周表面之部分由一反射塗佈層塗佈。Figure 9 illustrates a perspective view of one embodiment of a light-emitting device of the present invention in which a portion of the lateral circumferential surface is coated by a reflective coating layer.

1...發光裝置1. . . Illuminating device

2...覆晶發光二極體(LED)2. . . Flip chip light emitting diode (LED)

3...子基板3. . . Subsubstrate

4a...磷光體/Lumiramic磷光體4a. . . Phosphor / Lumiramic Phosphor

5...黏結層5. . . Bonding layer

6...橫向表面/橫向圓周表面6. . . Transverse surface / lateral circumferential surface

7...光活性塗佈層7. . . Photoactive coating layer

8...頂部表面8. . . Top surface

I...光線集合I. . . Ray collection

II...光線集合II. . . Ray collection

III...光線集合III. . . Ray collection

IV...光線集合IV. . . Ray collection

Claims (19)

一種發光裝置(1),其包含一配置於一子基板(3)上之發光二極體(2),該裝置具有一橫向圓周表面(6)及一頂部表面(8),及一光活性(optically active)塗佈層(7),該塗佈層(7):沿著該圓周表面(6)之至少一部分覆蓋,自該子基板(3)延伸至該頂部表面(8),且實質上不覆蓋該頂部表面(8),其中該光活性塗佈層係選自漫射塗佈層、光譜過濾塗佈層、發光塗佈層,及阻光塗佈層,及其組合的群。 A light-emitting device (1) comprising a light-emitting diode (2) disposed on a sub-substrate (3), the device having a lateral circumferential surface (6) and a top surface (8), and a photoactive (optically active) a coating layer (7) covering: at least a portion of the circumferential surface (6), extending from the sub-substrate (3) to the top surface (8), and substantially The top surface (8) is not covered, wherein the photoactive coating layer is selected from the group consisting of a diffuse coating layer, a spectral filter coating layer, a light-emitting coating layer, and a light-blocking coating layer, and combinations thereof. 如請求項1之發光裝置,其進一步包含一配置於該發光二極體上之光學組件(4),該光學組件(4)係選自一磷光體、一光透射體及一反射體,及其組合的群。 The illuminating device of claim 1, further comprising an optical component (4) disposed on the light emitting diode, the optical component (4) being selected from the group consisting of a phosphor, a light transmitting body, and a reflector, and The group of its combination. 如請求項2之發光裝置,其中該反射體經配置,使得光將經由該橫向圓周表面之至少一部分逸出。 The illumination device of claim 2, wherein the reflector is configured such that light will escape through at least a portion of the lateral circumferential surface. 如請求項1之發光裝置,其進一步包含一配置於該發光裝置上之光學組件。 The illuminating device of claim 1, further comprising an optical component disposed on the illuminating device. 如請求項1之發光裝置,其中該塗佈層為固體。 The illuminating device of claim 1, wherein the coating layer is a solid. 如請求項1之發光裝置,其中該橫向圓周表面之該至少部分由一個以上塗佈層塗佈。 The illuminating device of claim 1, wherein the at least a portion of the lateral circumferential surface is coated by more than one coating layer. 一種發光裝置陣列,其包含複數個如請求項1-6中任一項的發光裝置。 An array of illumination devices comprising a plurality of illumination devices as claimed in any one of claims 1-6. 如請求項7之發光裝置陣列,其中該等發光裝置經配置以共用該塗佈層。 The array of illumination devices of claim 7, wherein the illumination devices are configured to share the coating layer. 一種用於在一包含一發光二極體之發光裝置(1)的一橫向圓周表面(6)之至少一部分上塗覆一塗佈層的方法,該方法包含:在該圓周表面(6)之至少一部分上配置一光活性塗佈層(7),該塗佈層(7)自子基板(3)延伸至該頂部表面(8),且實質上不覆蓋該頂部表面(8),其中該光活性塗佈層係選自漫射塗佈層、光譜過濾塗佈層、發光塗佈層,及阻光塗佈層,及其組合的群。 A method for applying a coating layer on at least a portion of a lateral circumferential surface (6) of a light-emitting device (1) comprising a light-emitting diode, the method comprising: at least at the circumferential surface (6) a light-active coating layer (7) is disposed on a portion thereof, the coating layer (7) extending from the sub-substrate (3) to the top surface (8), and substantially not covering the top surface (8), wherein the light The active coating layer is selected from the group consisting of a diffuse coating layer, a spectral filter coating layer, a luminescent coating layer, and a light-blocking coating layer, and combinations thereof. 如請求項9之方法,其進一步包含以下步驟:在該子基板(3)上塗覆一第一液體塗層組合物,允許該第一塗層組合物覆蓋該發光裝置(1)之一第一橫向圓周表面(6)的至少部分,及凝固該第一塗層組合物以在該第一橫向圓周表面(6)之該至少部分上獲得一第一固體塗佈層(7)。 The method of claim 9, further comprising the step of: coating a first liquid coating composition on the sub-substrate (3), allowing the first coating composition to cover one of the light-emitting devices (1) At least a portion of the transverse circumferential surface (6), and solidifying the first coating composition to obtain a first solid coating layer (7) on the at least a portion of the first lateral circumferential surface (6). 如請求項10之方法,其中該塗層組合物藉由毛細管力經允許覆蓋一第一橫向圓周表面(6)之至少部分。 The method of claim 10, wherein the coating composition permits at least a portion of a first lateral circumferential surface (6) to be covered by capillary force. 如請求項10或11的方法,其中該塗層組合物係由一選自藉由針施配、噴嘴施配、藉由印刷及藉由噴灑之群的方法來塗覆。 The method of claim 10 or 11, wherein the coating composition is applied by a method selected from the group consisting of needle dispensing, nozzle dispensing, printing, and spraying. 如請求項10或11的方法,其中該液體塗層組合物在凝固後即形成一選自漫射塗佈層、光譜過濾塗佈層、發光塗佈層,及阻光塗佈層,及其組合之群的固體塗佈層。 The method of claim 10 or 11, wherein the liquid coating composition, after solidification, forms a layer selected from the group consisting of a diffusion coating layer, a spectral filter coating layer, a light-emitting coating layer, and a light-blocking coating layer, and A combined solid coating layer of the group. 如請求項10或11的方法,其中該塗層組合物包含一溶膠-凝膠衍生材料或一聚矽氧樹脂。 The method of claim 10 or 11, wherein the coating composition comprises a sol-gel derived material or a polyoxynoxy resin. 如請求項9至11中任一項的方法,其進一步包含預處理該橫向圓周表面以變成極性的,且使用一極性塗層組合物。 The method of any one of claims 9 to 11, further comprising pretreating the lateral circumferential surface to become polar and using a polar coating composition. 如請求項9至11中任一項的方法,其進一步包含預處理該橫向圓周表面以變成非極性的,且使用一非極性或極性塗層組合物。 The method of any one of claims 9 to 11, further comprising pretreating the lateral circumferential surface to become non-polar and using a non-polar or polar coating composition. 如請求項9至11中任一項的方法,其進一步包含以下步驟:在該子基板上塗覆至少一第二液體塗層組合物,允許該第二塗層組合物覆蓋該發光裝置之一第二橫向圓周表面的至少部分,及凝固該第二塗層組合物以在該第二橫向圓周表面之該至少部分上獲得一第二固體塗佈層。 The method of any one of claims 9 to 11, further comprising the step of coating at least one second liquid coating composition on the sub-substrate, allowing the second coating composition to cover one of the illuminating devices At least a portion of the lateral circumferential surface, and solidifying the second coating composition to obtain a second solid coating layer on the at least a portion of the second lateral circumferential surface. 如請求項17之方法,其中該第一塗層組合物與該第二塗層組合物不同。 The method of claim 17, wherein the first coating composition is different from the second coating composition. 如請求項17之方法,其中該第一橫向圓周表面與該第二橫向圓周表面不同。 The method of claim 17, wherein the first lateral circumferential surface is different from the second lateral circumferential surface.
TW098131958A 2008-09-25 2009-09-22 Coated light emitting device and method for coating thereof TWI512317B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08165066 2008-09-25

Publications (2)

Publication Number Publication Date
TW201020582A TW201020582A (en) 2010-06-01
TWI512317B true TWI512317B (en) 2015-12-11

Family

ID=41478493

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098131958A TWI512317B (en) 2008-09-25 2009-09-22 Coated light emitting device and method for coating thereof

Country Status (8)

Country Link
US (1) US8957428B2 (en)
EP (1) EP2335295B1 (en)
JP (1) JP5779097B2 (en)
KR (1) KR101639793B1 (en)
CN (1) CN102165611B (en)
RU (1) RU2503092C2 (en)
TW (1) TWI512317B (en)
WO (1) WO2010035206A1 (en)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150295154A1 (en) * 2005-02-03 2015-10-15 Epistar Corporation Light emitting device and manufacturing method thereof
US8097894B2 (en) 2009-07-23 2012-01-17 Koninklijke Philips Electronics N.V. LED with molded reflective sidewall coating
DE102009058006B4 (en) 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic semiconductor component
DE102010015068A1 (en) 2010-04-15 2011-10-20 Paul Voinea fiber optic system
JP6087809B2 (en) * 2010-04-16 2017-03-01 フィリップス ライティング ホールディング ビー ヴィ Lighting device
DE102010028407B4 (en) 2010-04-30 2021-01-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic component and method for producing an optoelectronic component
CN102971584A (en) * 2010-05-20 2013-03-13 光处方革新有限公司 LED light bulb with translucent spherical diffuser and remote phosphor thereupon
DE102010021791A1 (en) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component and a composite
DE102010029368A1 (en) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Electronic device and method for manufacturing an electronic device
DE102010023955A1 (en) * 2010-06-16 2011-12-22 Osram Opto Semiconductors Gmbh Optoelectronic component
DE102010031945A1 (en) * 2010-07-22 2012-01-26 Osram Opto Semiconductors Gmbh Semiconductor device and method for manufacturing a semiconductor device
DE102010032836A1 (en) * 2010-07-30 2012-02-02 Osram Opto Semiconductors Gmbh Light source and method for producing a light source
DE102010033963A1 (en) * 2010-08-11 2012-02-16 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
DE102010046254A1 (en) 2010-09-22 2012-04-19 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
DE102010063760B4 (en) 2010-12-21 2022-12-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method for producing an optoelectronic component and optoelectronic component
JP5582048B2 (en) * 2011-01-28 2014-09-03 日亜化学工業株式会社 Light emitting device
JP2012169189A (en) * 2011-02-15 2012-09-06 Koito Mfg Co Ltd Light-emitting module and vehicular lamp
EP2500623A1 (en) 2011-03-18 2012-09-19 Koninklijke Philips Electronics N.V. Method for providing a reflective coating to a substrate for a light-emitting device
JP5962102B2 (en) * 2011-03-24 2016-08-03 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
CA2840244C (en) * 2011-07-27 2018-04-03 Grote Industries, Llc System for lighting apparatus utilizing light active sheet material with integrated light emitting diode, window with lighting apparatus, conveyance with lighting apparatus, and method of providing lighting apparatus
JP6100778B2 (en) 2011-08-16 2017-03-22 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. LED mixing chamber with a reflective wall formed in the slot
JP6038443B2 (en) * 2011-11-21 2016-12-07 スタンレー電気株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
IN2014CN04572A (en) 2011-12-07 2015-09-18 Koninkl Philips Nv
WO2013111542A1 (en) 2012-01-23 2013-08-01 パナソニック株式会社 Nitride semiconductor light-emitting device
DE102012101102A1 (en) * 2012-02-10 2013-08-14 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and arrangement with a plurality of such components
US9257617B2 (en) 2012-02-10 2016-02-09 Koninklijke Philips N.V. Wavelength converted light emitting device
JP6559424B2 (en) * 2012-03-06 2019-08-14 シグニファイ ホールディング ビー ヴィ Lighting module and method for manufacturing the lighting module
JP2013197309A (en) * 2012-03-19 2013-09-30 Toshiba Corp Light-emitting device
JP6435258B2 (en) 2012-03-30 2018-12-05 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Light emitting device having wavelength conversion side coating
RU2015105357A (en) 2012-07-18 2016-09-10 Конинклейке Филипс Н.В. WHITE LIGHT SOURCE BASED ON LED WITH ADJUSTABLE CORRELATED COLOR TEMPERATURE WITH MIXING CAMERA AND EXIT WINDOW WITH REMOTE LUMINOPHOR
KR20200085912A (en) * 2012-07-20 2020-07-15 루미리즈 홀딩 비.브이. Led with ceramic green phosphor and protected red phosphor layer
DE102012212963B4 (en) * 2012-07-24 2022-09-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Process for producing an optoelectronic semiconductor component
JP6107024B2 (en) * 2012-09-26 2017-04-05 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
DE102012217521A1 (en) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Optoelectronic component
WO2014072871A1 (en) * 2012-11-07 2014-05-15 Koninklijke Philips N.V. Light emitting device including a filter and a protective layer
WO2014072865A1 (en) * 2012-11-07 2014-05-15 Koninklijke Philips N.V. Wavelength converted light emitting device
EP2927970B1 (en) * 2012-12-03 2017-08-30 Citizen Watch Co., Ltd. Led module
CN103887410B (en) * 2012-12-21 2017-02-01 展晶科技(深圳)有限公司 Manufacturing method of light-emitting diode
AT513917B1 (en) * 2013-02-05 2014-11-15 Zizala Lichtsysteme Gmbh Lighting unit for a headlight and headlights
DE102013204291A1 (en) * 2013-03-12 2014-10-02 Osram Opto Semiconductors Gmbh Optoelectronic component
CN111628062A (en) * 2013-04-11 2020-09-04 亮锐控股有限公司 Top-emitting semiconductor light-emitting device
CN111509112B (en) * 2013-07-08 2024-04-02 亮锐控股有限公司 Wavelength-converted semiconductor light emitting device
JP6360173B2 (en) * 2013-07-22 2018-07-18 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Flip chip side-emitting LED
CN105453282B (en) * 2013-08-20 2020-12-15 亮锐控股有限公司 Shaped phosphors to reduce repetitive reflections
EP2854186A1 (en) * 2013-09-26 2015-04-01 Seoul Semiconductor Co., Ltd. Light source module, fabrication method therefor, and backlight unit including the same
DE102013022642B3 (en) 2013-11-14 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic semiconductor component
DE102013112549B4 (en) 2013-11-14 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Process for the production of optoelectronic semiconductor components and optoelectronic semiconductor components
JP6438648B2 (en) * 2013-11-15 2018-12-19 日亜化学工業株式会社 Semiconductor light emitting device and manufacturing method thereof
TWI711190B (en) * 2013-11-18 2020-11-21 晶元光電股份有限公司 Light emitting apparatus and manufacturing method thereof
JP6299176B2 (en) * 2013-11-22 2018-03-28 日亜化学工業株式会社 LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND LIGHTING DEVICE EQUIPPED WITH THE LIGHT EMITTING DEVICE
CN113658943A (en) * 2013-12-13 2021-11-16 晶元光电股份有限公司 Light emitting device and method for manufacturing the same
JP6331389B2 (en) * 2013-12-27 2018-05-30 日亜化学工業株式会社 Light emitting device
CN105874615B (en) * 2014-01-09 2020-01-03 亮锐控股有限公司 Light emitting device with reflective sidewalls
DE102014102293A1 (en) * 2014-02-21 2015-08-27 Osram Opto Semiconductors Gmbh Method for producing optoelectronic semiconductor components and optoelectronic semiconductor component
JP2017510997A (en) * 2014-04-07 2017-04-13 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. Ultraviolet light emitting device and method
JP6349904B2 (en) * 2014-04-18 2018-07-04 日亜化学工業株式会社 Semiconductor light emitting device and manufacturing method thereof
JP6398323B2 (en) 2014-05-25 2018-10-03 日亜化学工業株式会社 Manufacturing method of semiconductor light emitting device
JP6323176B2 (en) * 2014-05-30 2018-05-16 日亜化学工業株式会社 Method for manufacturing light emitting device
JP6582382B2 (en) * 2014-09-26 2019-10-02 日亜化学工業株式会社 Method for manufacturing light emitting device
JP6940784B2 (en) * 2014-09-26 2021-09-29 日亜化学工業株式会社 Manufacturing method of light emitting device
JP6484982B2 (en) * 2014-09-30 2019-03-20 日亜化学工業株式会社 Method for manufacturing light emitting device
JP6447018B2 (en) * 2014-10-31 2019-01-09 日亜化学工業株式会社 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MANUFACTURING METHOD
US10323803B2 (en) * 2014-11-18 2019-06-18 Seoul Semiconductor Co., Ltd. Light emitting device and vehicular lamp comprising same
FR3028672B1 (en) 2014-11-18 2018-01-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES
KR102288384B1 (en) * 2014-11-18 2021-08-11 서울반도체 주식회사 Light emitting device
KR102306802B1 (en) * 2014-11-18 2021-09-30 서울반도체 주식회사 Light emitting device
DE102015102785A1 (en) * 2015-02-26 2016-09-01 Osram Opto Semiconductors Gmbh Optoelectronic lighting device
DE102015106367B4 (en) * 2015-04-24 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED array
KR102641716B1 (en) * 2015-08-03 2024-02-29 루미리즈 홀딩 비.브이. Semiconductor light-emitting device with reflective side coating
US10763404B2 (en) 2015-10-05 2020-09-01 Maven Optronics Co., Ltd. Light emitting device with beveled reflector and manufacturing method of the same
TWI677114B (en) * 2015-10-05 2019-11-11 行家光電股份有限公司 Light emitting device with beveled reflector
KR102481646B1 (en) 2015-11-12 2022-12-29 삼성전자주식회사 Semiconductor light emitting device package
JP7266961B2 (en) 2015-12-31 2023-05-01 晶元光電股▲ふん▼有限公司 light emitting device
CN107039572B (en) * 2016-02-03 2019-05-10 行家光电股份有限公司 Have the light emitting device and its manufacturing method of asymmetry light shape
EP3200248B1 (en) * 2016-01-28 2020-09-30 Maven Optronics Co., Ltd. Light emitting device with asymmetrical radiation pattern and manufacturing method of the same
JP7080010B2 (en) * 2016-02-04 2022-06-03 晶元光電股▲ふん▼有限公司 Light emitting element and its manufacturing method
US10641437B2 (en) * 2016-06-30 2020-05-05 Nichia Corporation LED module
JP6874288B2 (en) * 2016-06-30 2021-05-19 日亜化学工業株式会社 Light emitting device and backlight source
JP2018028647A (en) * 2016-08-20 2018-02-22 セイコーエプソン株式会社 Wavelength conversion element, light source device, and projector
CN107946441A (en) 2016-10-12 2018-04-20 亿光电子工业股份有限公司 Light-emitting device and light-emitting diode encapsulation structure
JP6800702B2 (en) * 2016-11-08 2020-12-16 スタンレー電気株式会社 Semiconductor light emitting device and its manufacturing method
US10971663B2 (en) 2016-11-08 2021-04-06 Stanley Electric Co., Ltd. Semiconductor light emitting device
KR102659370B1 (en) * 2016-11-25 2024-04-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Semiconductor device package
US10728968B2 (en) 2016-12-20 2020-07-28 Signify Holding B.V. Multi-mode polarized spot with electrically adjustable polarization state
CN110100318B (en) * 2016-12-22 2022-04-15 夏普株式会社 Display device and manufacturing method
DE102017104479B4 (en) * 2017-03-03 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Process for the production of optoelectronic semiconductor components
US10224358B2 (en) * 2017-05-09 2019-03-05 Lumileds Llc Light emitting device with reflective sidewall
TWI610469B (en) * 2017-05-26 2018-01-01 Huang xiu zhang Flip-chip type light-emitting diode and manufacturing method thereof
US10749076B2 (en) * 2017-06-29 2020-08-18 Epistar Corporation Light-emitting device
JP7005967B2 (en) * 2017-07-03 2022-01-24 大日本印刷株式会社 LED module
KR102452484B1 (en) * 2017-08-11 2022-10-11 삼성전자주식회사 Light emitting device package and light emitting device pakage module
JP6928244B2 (en) * 2017-08-22 2021-09-01 日亜化学工業株式会社 Light emitting device
JP7284366B2 (en) * 2017-08-29 2023-05-31 日亜化学工業株式会社 light emitting device
JP6575576B2 (en) * 2017-10-12 2019-09-18 日亜化学工業株式会社 Method for manufacturing light emitting device
US11296262B2 (en) * 2017-12-21 2022-04-05 Lumileds Llc Monolithic segmented LED array architecture with reduced area phosphor emission surface
KR20190084807A (en) * 2018-01-09 2019-07-17 서울바이오시스 주식회사 Light emitting device
TW201939768A (en) * 2018-03-16 2019-10-01 聯京光電股份有限公司 Optoelectronic package
CN108807303B (en) * 2018-05-17 2020-07-24 江苏如高第三代半导体产业研究院有限公司 Single-side light-emitting wafer-level Chip Scale Package (CSP) packaging structure and preparation method thereof
DE102018128896A1 (en) * 2018-11-16 2020-05-20 Osram Opto Semiconductors Gmbh Semiconductor chip with an inner contact element and two outer contact elements and semiconductor component
US11217734B2 (en) * 2018-12-27 2022-01-04 Lumileds Llc Patterned lumiramic for improved PCLED stability
US11594665B2 (en) 2019-08-02 2023-02-28 Nichia Corporation Light-emitting unit and surface-emission light source
US11411043B2 (en) 2019-10-25 2022-08-09 Lumileds Llc Pigmented and scattering particles in side coating materials for LED applications
US11302849B2 (en) 2019-10-25 2022-04-12 Lumileds Llc Pigmented and scattering particles in side coating materials for LED applications
CN116210082A (en) * 2019-10-25 2023-06-02 亮锐有限责任公司 Coloring and scattering particles in side-coating materials for LED applications
JP7295437B2 (en) * 2019-11-29 2023-06-21 日亜化学工業株式会社 light emitting device
US20220285594A1 (en) * 2019-12-12 2022-09-08 Lumileds Llc Light emitting diodes with reflective sidewalls comprising porous particles
US11189757B2 (en) * 2019-12-12 2021-11-30 Lumileds Llc Light emitting diodes with reflective sidewalls comprising porous particles
CN113823723A (en) * 2020-06-18 2021-12-21 光宝光电(常州)有限公司 Light emitting diode packaging structure
JP7189451B2 (en) * 2020-06-30 2022-12-14 日亜化学工業株式会社 Light emitting module, liquid crystal display
JPWO2023054199A1 (en) * 2021-09-28 2023-04-06
US20230260972A1 (en) * 2022-02-17 2023-08-17 Creeled, Inc. Arrangements of multiple-chip light-emitting diode packages
USD996377S1 (en) 2022-02-17 2023-08-22 Creeled, Inc. Light-emitting diode package
USD996378S1 (en) 2022-03-09 2023-08-22 Creeled, Inc. Light-emitting diode package
JP2023139780A (en) * 2022-03-22 2023-10-04 スタンレー電気株式会社 Light-emitting device and method for manufacturing light-emitting device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030141563A1 (en) * 2002-01-28 2003-07-31 Bily Wang Light emitting diode package with fluorescent cover
CN1836339A (en) * 2002-08-30 2006-09-20 吉尔科有限公司 Light emitting diode with improved effience
US7196354B1 (en) * 2005-09-29 2007-03-27 Luminus Devices, Inc. Wavelength-converting light-emitting devices
TW200725949A (en) * 2005-09-29 2007-07-01 Toshiba Kk White light-emitting device, method for manufacturing same, backlight using same, and liquid crystal display
US20080218072A1 (en) * 2007-02-28 2008-09-11 Toyoda Gosei Co., Ltd. Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962985A (en) 1989-10-02 1990-10-16 At&T Bell Laboratories Protective coatings for optical devices comprising Langmuir-Blodgett films
JPH10144963A (en) * 1996-11-05 1998-05-29 Sanyo Electric Co Ltd Led light source and its manufacture
JPH11320962A (en) * 1998-05-19 1999-11-24 Canon Inc Led exposing head
US6373188B1 (en) 1998-12-22 2002-04-16 Honeywell International Inc. Efficient solid-state light emitting device with excited phosphors for producing a visible light output
JP4822482B2 (en) 2001-05-23 2011-11-24 シチズン電子株式会社 Light emitting diode and manufacturing method thereof
ATE525755T1 (en) * 2001-10-12 2011-10-15 Nichia Corp LIGHT-EMITTING COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US7777235B2 (en) * 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7075225B2 (en) * 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
DE102004021233A1 (en) * 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh LED array
US20050264194A1 (en) 2004-05-25 2005-12-01 Ng Kee Y Mold compound with fluorescent material and a light-emitting device made therefrom
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
EP1780592A4 (en) 2004-06-30 2014-07-09 Mitsubishi Chem Corp Light emitting device, backlight unit for lighting, display unit and display unit
JP2007019096A (en) * 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd Light-emitting device and its manufacturing method
RU2303833C2 (en) * 2005-07-26 2007-07-27 Самсунг Электро-Меканикс Ко., Лтд. Lighting unit
US20080265749A1 (en) 2005-10-05 2008-10-30 Koninklijke Philips Electronics, N.V. Phosphor-Converted Electroluminescent Device with Absorbing Filter
CN101461047B (en) * 2006-06-07 2011-06-15 松下电器产业株式会社 Semiconductor element, method for manufacturing the semiconductor element, electronic device and method for manufacturing the electronic device
CN101467270B (en) 2006-06-14 2013-03-27 皇家飞利浦电子股份有限公司 Lighting device
RU2321103C1 (en) * 2006-12-21 2008-03-27 Закрытое акционерное общество "Светлана-Оптоэлектроника" Light-emitting semiconductor module
US8097894B2 (en) 2009-07-23 2012-01-17 Koninklijke Philips Electronics N.V. LED with molded reflective sidewall coating

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030141563A1 (en) * 2002-01-28 2003-07-31 Bily Wang Light emitting diode package with fluorescent cover
CN1836339A (en) * 2002-08-30 2006-09-20 吉尔科有限公司 Light emitting diode with improved effience
US7196354B1 (en) * 2005-09-29 2007-03-27 Luminus Devices, Inc. Wavelength-converting light-emitting devices
TW200725949A (en) * 2005-09-29 2007-07-01 Toshiba Kk White light-emitting device, method for manufacturing same, backlight using same, and liquid crystal display
US20080218072A1 (en) * 2007-02-28 2008-09-11 Toyoda Gosei Co., Ltd. Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device

Also Published As

Publication number Publication date
RU2011116169A (en) 2012-10-27
EP2335295B1 (en) 2021-01-20
CN102165611A (en) 2011-08-24
US8957428B2 (en) 2015-02-17
JP2012503876A (en) 2012-02-09
KR101639793B1 (en) 2016-07-15
CN102165611B (en) 2014-04-23
KR20110070989A (en) 2011-06-27
WO2010035206A1 (en) 2010-04-01
US20110175117A1 (en) 2011-07-21
EP2335295A1 (en) 2011-06-22
JP5779097B2 (en) 2015-09-16
TW201020582A (en) 2010-06-01
RU2503092C2 (en) 2013-12-27

Similar Documents

Publication Publication Date Title
TWI512317B (en) Coated light emitting device and method for coating thereof
KR101524012B1 (en) Side emitting device with hybrid top reflector
JP5766728B2 (en) Method for forming warm white light emitting device having high color rendering evaluation value and related light emitting device
KR102510808B1 (en) Light source assembly with improved color uniformity
US8940561B2 (en) Systems and methods for application of optical materials to optical elements
KR101892593B1 (en) A light emitting device and the manufacturing method
EP1938392B1 (en) Light diffusion type light emitting diode
US20080076198A1 (en) Method of manufacturing light emitting diode package and white light source module
KR20090039932A (en) Light emitting device package
CN104716131B (en) The manufacturing method and light emitting device of light emitting device
US9054280B2 (en) Light emitting module
CN107710426A (en) Light-emitting device
US9099620B2 (en) Light-emitting device and method for manufacturing the same
TWI772277B (en) Led apparatus employing tunable color filtering using multiple neodymium and fluorine compounds
US20220102593A1 (en) Ultra-thin phosphor layers partially filled with si-based binders