TWI506900B - Electrostatic discharge protection device - Google Patents

Electrostatic discharge protection device Download PDF

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TWI506900B
TWI506900B TW100134212A TW100134212A TWI506900B TW I506900 B TWI506900 B TW I506900B TW 100134212 A TW100134212 A TW 100134212A TW 100134212 A TW100134212 A TW 100134212A TW I506900 B TWI506900 B TW I506900B
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protection device
electrode
magnetic substrate
discharge
insulating layer
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TW100134212A
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Chinese (zh)
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TW201230569A (en
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Takahiro Sumi
Eriko Sawada
Jun Adachi
Takayuki Tsukizawa
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Murata Manufacturing Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01TSPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T4/00Overvoltage arresters using spark gaps
    • H01T4/10Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01TSPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T4/00Overvoltage arresters using spark gaps
    • H01T4/08Overvoltage arresters using spark gaps structurally associated with protected apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01TSPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T4/00Overvoltage arresters using spark gaps
    • H01T4/10Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
    • H01T4/12Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel hermetically sealed

Description

靜電放電保護裝置Electrostatic discharge protection device

本發明係關於保護半導體裝置等免受靜電破壞之ESD保護裝置。The present invention relates to an ESD protection device for protecting a semiconductor device or the like from electrostatic damage.

近年來,在使用家用電器時,插拔作為輸入輸出介面之電纜之次數有增加傾向,故,存在靜電易施加於輸入輸出連接部之狀況。又,因伴隨信號頻率之高頻化,以設計規則之微細化而製作通路變得困難,且LSI自身對靜電亦變得脆弱。In recent years, when a home appliance is used, the number of times of plugging and unplugging a cable as an input/output interface tends to increase, so that static electricity is easily applied to the input/output connection portion. In addition, it is difficult to make a via with the miniaturization of design rules due to the high frequency of the signal frequency, and the LSI itself is also vulnerable to static electricity.

因此,為保護LSI等半導體裝置免受靜電放電(ESD)(Electron-Statics Dissharge)影響而廣泛使用ESD保護裝置。Therefore, an ESD protection device is widely used to protect semiconductor devices such as LSI from electrostatic discharge (ESD) (Electron-Statics Dissharge).

作為此種ESD保護裝置,已提案一種ESD保護裝置(突波吸收元件)(參照專利文獻1),其係於具有一對外部電極之陶瓷基材(絕緣性陶瓷層)內部,設置與外部電極導通之內部電極及放電空間,且將放電氣體侷限於放電空間中。As such an ESD protection device, an ESD protection device (surge absorption element) has been proposed (see Patent Document 1), which is provided inside a ceramic base material (insulating ceramic layer) having a pair of external electrodes, and is provided with an external electrode. The internal electrode and the discharge space are turned on, and the discharge gas is limited to the discharge space.

然而,在該專利文獻1之ESD保護裝置中,使用鐵氧體等磁性材料作為陶瓷基材之情形,存在因放電使磁性材料導體化,而產生短路不良之問題。However, in the ESD protection device of Patent Document 1, when a magnetic material such as ferrite is used as the ceramic base material, there is a problem in that the magnetic material is electrically conductive due to discharge, and a short-circuit defect occurs.

又,作為其他之ESD保護裝置,已提案一種ESD保護裝置(參照專利文獻2),其係具備:陶瓷多層基板;至少一對之放電電極,其係設有特定間隔且相互對向地形成於陶瓷多層基板上;及外部電極,其係形成於陶瓷多層基板之表面,且與放電電極連接,其中於連接一對放電電極間之區域,具備有使由不具導電性之無機材料塗布之導電材料分散而成之輔助電極。Further, as another ESD protection device, an ESD protection device (see Patent Document 2) has been proposed, which includes a ceramic multilayer substrate, and at least one pair of discharge electrodes formed at a predetermined interval and opposed to each other a ceramic multilayer substrate; and an external electrode formed on the surface of the ceramic multilayer substrate and connected to the discharge electrode, wherein the region between the pair of discharge electrodes is provided with a conductive material coated with an inorganic material having no conductivity Dispersed auxiliary electrode.

然而,即使ESD保護裝置具備如上所述之輔助電極,在使用鐵氧體等磁性材料作為陶瓷多層基板之基材之情形,亦存在因放電使磁性材料導體化,導致短路不良之問題。However, even if the ESD protection device includes the auxiliary electrode as described above, when a magnetic material such as ferrite is used as the base material of the ceramic multilayer substrate, there is a problem that the magnetic material is conductorized by the discharge, resulting in a short circuit failure.

[先行技術文獻][Advanced technical literature] [專利文獻][Patent Literature]

[專利文獻1]日本特開2001-43954號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-43954

[專利文獻2]日本專利第4434314號公報[Patent Document 2] Japanese Patent No. 4434314

本發明係鑒於上述實情而完成者,其目的在於提供一種可抑制短路不良,且在反復施加ESD之情形,其特性亦不會劣化之反復操作性優異之ESD保護裝置。The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide an ESD protection device which is excellent in repeatability and which does not deteriorate in characteristics when ESD is repeatedly applied while suppressing short-circuit failure.

為解決上述課題,本發明之ESD保護裝置之特徵在於具備:磁性基材;對向電極,其係於上述磁性基材之表面或內部,包含以前端部間隔開而相互對向之方式形成之一側對向電極與另一側對向電極,上述一側對向電極與上述另一側對向電極之前端部間構成為在ESD施加時產生放電之放電間隙部;及保護絕緣層,其係配設於上述磁性基材之表面或內部之至少面向上述放電間隙部之區域中,防止因放電使上述磁性基材之絕緣性劣化。In order to solve the above problems, an ESD protection device according to the present invention includes: a magnetic substrate; and a counter electrode that is formed on the surface or inside of the magnetic substrate and that is formed by being spaced apart from each other at a front end portion a side opposite electrode and another opposite electrode, wherein the one side opposite electrode and the other side opposite electrode form a discharge gap portion that generates a discharge when ESD is applied; and a protective insulating layer. The surface of the magnetic substrate is disposed at least in a region facing the discharge gap portion to prevent deterioration of insulation properties of the magnetic substrate due to discharge.

又,本發明之ESD保護裝置中,上述於一側對向電極之前端部及上述另一側對向電極之前端部、與上述磁性基材之間較好亦配設有上述保護絕緣層。Further, in the ESD protection device of the present invention, the protective insulating layer is preferably disposed between the front end portion of the one facing electrode and the front end portion of the other opposing electrode and the magnetic substrate.

又,本發明之其他ESD保護裝置之特徵在於具備:磁性基材;對向電極,其係於上述磁性基材之表面或內部,包含以前端部間隔開而相互對向之方式形成之一側對向電極與另一側對向電極,上述一側對向電極與上述另一側對向電極之前端部間係構成在ESD施加時產生放電之放電間隙部;放電輔助電極,其係分別連接構成上述對向電極之上述一側對向電極與上述另一側對向電極,且以自上述一側對向電極跨及上述另一側對向電極之方式配設;及保護絕緣層,其係配設於上述放電輔助電極與上述磁性基材之間,防止因放電使上述磁性基材之絕緣性劣化。Further, another ESD protection device according to the present invention includes: a magnetic base material; and a counter electrode that is formed on the surface or inside of the magnetic base material, and includes one side that is spaced apart from each other at a front end portion and faces each other a counter electrode and a counter electrode on the other side, wherein the one side opposite electrode and the other side opposite electrode form a discharge gap portion that generates a discharge when ESD is applied; and the discharge auxiliary electrode is connected separately And constituting the opposite electrode and the other opposite electrode of the counter electrode, and the opposite electrode is disposed from the opposite electrode and the opposite electrode; and a protective insulating layer It is disposed between the discharge auxiliary electrode and the magnetic substrate to prevent deterioration of insulation properties of the magnetic substrate due to discharge.

又,上述保護絕緣層較好超出形成有上述放電輔助電極之區域而配設至其周邊之區域。Further, it is preferable that the protective insulating layer is disposed beyond a region in which the discharge auxiliary electrode is formed and disposed in a region around the protective insulating layer.

又,上述保護絕緣層較好含有結晶性無機氧化物。Further, the protective insulating layer preferably contains a crystalline inorganic oxide.

上述保護絕緣層較好含有玻璃成分。The protective insulating layer preferably contains a glass component.

又,上述磁性基材較好含有玻璃成分。Further, the magnetic substrate preferably contains a glass component.

又,於上述磁性基材之內部亦可設置有空洞部,成為使上述放電間隙部面向上述空洞部之構成。Further, a cavity portion may be provided inside the magnetic base material, and the discharge gap portion may face the cavity portion.

又,於上述磁性基材之於上述空洞部所露出之區域較好配設有上述保護絕緣層。Further, the protective insulating layer is preferably disposed in a region of the magnetic substrate exposed by the cavity portion.

本發明之ESD保護裝置,由於在面向構成對向電極之一側對向電極之前端部與另一側對向電極之前端部之間之區域的磁性基材表面或內部,具備保護絕緣層來防止因放電造成上述磁性基材之絕緣性劣化,故在反復施加ESD之情形,亦可抑制、防止磁性基材導體化及短路不良發生,而可提供可靠性高之ESD保護裝置。In the ESD protection device of the present invention, the protective substrate is provided on the surface or inside of the magnetic substrate facing the region between the end portion of the counter electrode facing the counter electrode and the end portion of the counter electrode opposite the other electrode. Since the insulation property of the magnetic substrate is prevented from being deteriorated by the discharge, when the ESD is repeatedly applied, the magnetic substrate can be prevented from being electrically conductive and the short-circuit defect can be prevented, and an ESD protection device having high reliability can be provided.

又,在本發明之ESD保護裝置中,因使用磁性基材作為形成有對向電極之基材,故可提供具有濾波器功能與ESD功能之複合零件。Further, in the ESD protection device of the present invention, since the magnetic substrate is used as the base material on which the counter electrode is formed, a composite member having a filter function and an ESD function can be provided.

又,本發明之ESD保護裝置中,藉由在一側對向電極之前端部及另一側對向電極之前端部與磁性基材之間,亦配設保護絕緣層,而可進而確實防止因放電造成磁性基材之導體化,可使本發明更有效。Further, in the ESD protection device of the present invention, the protective insulating layer is also disposed between the front end portion of the counter electrode and the front end portion of the counter electrode opposite to the magnetic substrate, and can be surely prevented. The present invention is more effective in terms of conductor formation of a magnetic substrate due to discharge.

又,本發明之另一ESD保護裝置,由於其進而具備分別連接構成對向電極之一側對向電極與另一側對向電極,且以自一側對向電極跨及另一側對向電極之方式配設之放電輔助電極,故可獲得優異之放電特性,且由於在放電輔助電極與磁性基材之間,具備保護絕緣層而防止放電時磁性基材之絕緣性劣化,故可抑制、防止磁性基材導體化及短路不良發生,而可提供特性良好、可靠性高之ESD保護裝置。Further, another ESD protection device according to the present invention further includes a counter electrode that is connected to one side of the counter electrode and a counter electrode that is opposite to the other side, and that is opposite to the other side from the opposite electrode. Since the discharge auxiliary electrode is disposed in the form of an electrode, excellent discharge characteristics can be obtained, and a protective insulating layer is provided between the discharge auxiliary electrode and the magnetic substrate to prevent deterioration of insulation of the magnetic substrate during discharge, thereby suppressing It is possible to prevent the occurrence of poor magnetic conductors and short-circuit defects, and to provide an ESD protection device with good characteristics and high reliability.

藉由使保護絕緣層超出形成有放電輔助電極之區域,並配設至其周邊之區域,可進而確實防止因放電造成磁性基材導體化,並可使本發明更有效。By making the protective insulating layer extend beyond the region in which the discharge auxiliary electrode is formed and disposed in the vicinity thereof, it is possible to surely prevent the magnetic substrate from being electrically conductive due to discharge, and the present invention can be more effective.

又,於保護絕緣層含有結晶性無機氧化物之情形,可進而確實防止因放電造成磁性基材之導體化。Further, in the case where the protective insulating layer contains a crystalline inorganic oxide, it is possible to surely prevent the conductor of the magnetic substrate from being caused by the discharge.

又,作為結晶性無機氧化物,例舉有Al2 O3 、BaO、CaO、TiO2 、CeO、MgO、及ZnO等。Further, examples of the crystalline inorganic oxide include Al 2 O 3 , BaO, CaO, TiO 2 , CeO, MgO, and ZnO.

又,保護絕緣層含有玻璃成分之情形,可提高保護絕緣層與磁性基材之密著性。Further, in the case where the protective insulating layer contains a glass component, the adhesion between the protective insulating layer and the magnetic substrate can be improved.

又,於磁性基材含有玻璃成分之情形,可提高絕緣層與磁性基材之密著性。Further, in the case where the magnetic substrate contains a glass component, the adhesion between the insulating layer and the magnetic substrate can be improved.

又,於磁性基材之內部設置空洞部,使放電間隙部面向空洞部之構成之情形,可在磁性基材內部進行放電,而可提高可靠性。Further, when a cavity portion is provided inside the magnetic substrate and the discharge gap portion faces the cavity portion, discharge can be performed inside the magnetic substrate, and reliability can be improved.

又,放電部位於磁性基材內部(空洞部)之情形,雖有空洞部內表面易產生絕緣劣化之傾向,但藉由在磁性基材之於空洞部所露出之區域配設保護絕緣層,可抑制絕緣劣化並維持良好特性。Further, in the case where the discharge portion is located inside the magnetic base material (cavity portion), the inner surface of the cavity portion tends to be deteriorated in insulation, but the protective insulating layer is disposed in the region where the magnetic base material is exposed in the cavity portion. Suppresses insulation degradation and maintains good characteristics.

[實施例之ESD保護裝置之形態][Form of ESD protection device of embodiment] (1) 本發明之實施例之第1ESD保護裝置(1) A first ESD protection device of an embodiment of the present invention

圖1係模式性顯示本發明之實施例之ESD保護裝置A1之構造之剖面圖,圖2係其平面圖。1 is a cross-sectional view schematically showing the configuration of an ESD protection device A1 of an embodiment of the present invention, and FIG. 2 is a plan view thereof.

該ESD保護裝置A1如圖1及圖2所示,係具備:包含鐵氧體之磁性基材1;對向電極2,其係於磁性基材1之表面,具有以前端部間隔開而相互對向之方式形成,且前端部彼此係構成於ESD施加時產生放電之放電間隙部10之一側對向電極2a與另一側對向電極2b;及保護絕緣層4,其係配設於面向構成對向電極2之一側對向電極2a之前端部與另一側對向電極2b之前端部之間之區域之放電間隙部10之磁性基材1上,防止因放電造成磁性基材之絕緣性劣化。另,在該第1之ESD保護裝置A1中,保護絕緣層4係構成為自放電間隙部10跨及一側對向電極2a之前端部及另一側對向電極2b之前端部與磁性基材1之間之區域而配設,以確實保護磁性基材1。As shown in FIGS. 1 and 2, the ESD protection device A1 includes a magnetic substrate 1 including a ferrite, and a counter electrode 2 is attached to the surface of the magnetic substrate 1 and has a front end portion spaced apart from each other. Formed in a facing manner, and the front end portions are configured to be opposite to the side opposite electrode 2a and the other opposite electrode 2b of the discharge gap portion 10 that generates discharge during ESD application; and the protective insulating layer 4 is disposed Preventing the magnetic substrate from being discharged by the discharge on the magnetic substrate 1 constituting the discharge gap portion 10 of the region between the front end portion of the counter electrode 2a and the front end portion of the opposite electrode 2b The insulation is deteriorated. Further, in the first ESD protection device A1, the protective insulating layer 4 is configured to extend from the discharge gap portion 10 to the front end portion of the opposite electrode 2a and the front end portion of the opposite electrode 2b and the magnetic base. The region between the materials 1 is disposed to surely protect the magnetic substrate 1.

又,該ESD保護裝置A1具備外部電極5a、5b,其係以與構成對向電極2之一側對向電極2a及另一側對向電極2b導通之方式配設於磁性基材1之兩端部,用以與外部電性連接。Further, the ESD protection device A1 includes external electrodes 5a and 5b which are disposed on the magnetic substrate 1 so as to be electrically connected to the opposite electrode 2a and the other opposite electrode 2b constituting the counter electrode 2. The end is for electrically connecting to the outside.

(2) 本發明之實施例之第2ESD保護裝置(2) The second ESD protection device of the embodiment of the present invention

圖3係模式性顯示本發明之實施例之第2ESD保護裝置A2之構造之剖面圖,圖4係其平面圖。Fig. 3 is a cross-sectional view schematically showing the structure of a second ESD protection device A2 according to an embodiment of the present invention, and Fig. 4 is a plan view thereof.

該ESD保護裝置A2如圖3及圖4所示,具備:包含鐵氧體之磁性基材1;對向電極2,其於磁性基材1之表面,包含以前端部間隔開而相互對向之方式形成、且前端部彼此係構成ESD施加時產生放電之放電間隙部10之一側對向電極2a與另一側對向電極2b;放電輔助電極3,其係分別連接構成對向電極之一側對向電極2a與另一側對向電極2b,且以自一側對向電極2a跨及另一側對向電極2b之方式配設;及保護絕緣層4,其係配設於放電輔助電極3與磁性基材1之間,防止因放電造成磁性基材之絕緣性劣化。另,在該第2之ESD保護裝置A2中,保護絕緣層4係構成為以超出形成有放電輔助電極3之區域而伸出至其周邊區域之方式配設,以確實保護磁性基材1。As shown in FIGS. 3 and 4, the ESD protection device A2 includes a magnetic substrate 1 including a ferrite, and the counter electrode 2 is disposed on the surface of the magnetic substrate 1 so as to be spaced apart from each other at the front end portion. The front end portion is formed to constitute one side opposite electrode 2a and the other opposite electrode 2b, and the discharge auxiliary electrode 3 is connected to each other to form a counter electrode. One side counter electrode 2a and the other side counter electrode 2b are disposed so as to straddle the other side counter electrode 2a and the other side counter electrode 2b; and the protective insulating layer 4 is disposed in the discharge Between the auxiliary electrode 3 and the magnetic substrate 1, the insulation of the magnetic substrate is prevented from being deteriorated by the discharge. Further, in the second ESD protection device A2, the protective insulating layer 4 is disposed so as to protrude beyond the region in which the discharge auxiliary electrode 3 is formed, and is extended to the peripheral region thereof to surely protect the magnetic substrate 1.

又,該ESD保護裝置A2具備外部電極5a、5b,其係以與構成對向電極2之一側對向電極2a及另一側對向電極2b導通之方式配設於磁性基材1之兩端部,用以與外部電性連接。Further, the ESD protection device A2 includes external electrodes 5a and 5b which are disposed on the magnetic substrate 1 so as to be electrically connected to the one-side counter electrode 2a and the other counter electrode 2b. The end is for electrically connecting to the outside.

(3) 本發明之實施例之第3ESD保護裝置(3) A third ESD protection device of an embodiment of the present invention

圖5係顯示本發明之實施例之第3ESD保護裝置A3之構造之圖。Fig. 5 is a view showing the configuration of a third ESD protection device A3 according to an embodiment of the present invention.

該ESD保護裝置A3係以面向設置於磁性基材1內部之空洞部12之方式,配設有由構成對向電極2之一側對向電極2a之前端部與另一側對向電極2b之前端部相夾之區域的放電間隙部10,且露出於空洞部12之磁性基材1之表面配設有保護絕緣層4。另,保護絕緣層4亦以介隔於一側對向電極2a及另一側對向電極2b之前端部與磁性基材1之間之方式形成。The ESD protection device A3 is disposed so as to face the cavity portion 12 provided inside the magnetic substrate 1 so as to constitute the front end portion of the opposite electrode 2a and the other side opposite electrode 2b. The protective insulating layer 4 is disposed on the surface of the magnetic gap 1 exposed in the cavity portion 12 in the discharge gap portion 10 in the region where the tip end portion is sandwiched. Further, the protective insulating layer 4 is also formed to be interposed between the front end electrode 2a and the other end portion of the opposite counter electrode 2b and the magnetic substrate 1.

又,該ESD保護裝置A3係具備外部電極5a、5b,其係以與構成對向電極2之一側對向電極2a及另一側對向電極2b導通之方式配設於磁性基材1之兩端部,用以與外部電性連接。Further, the ESD protection device A3 includes external electrodes 5a and 5b which are disposed on the magnetic substrate 1 so as to be electrically connected to the opposite electrode 2a and the other opposite electrode 2b constituting the counter electrode 2. Both ends are electrically connected to the outside.

(4) 本發明之實施例之第4ESD保護裝置(4) The fourth ESD protection device of the embodiment of the present invention

又,圖6係顯示本發明之實施例之第4ESD保護裝置A4之構造之圖。Further, Fig. 6 is a view showing the configuration of a fourth ESD protection device A4 according to an embodiment of the present invention.

該ESD保護裝置4具備:對向電極2,其具有前端部彼此係構成於ESD施加時產生放電之放電間隙部10之一側對向電極2a與另一側對向電極2b;及放電輔助電極3,其係分別連接構成對向電極之一側對向電極2a與另一側對向電極2b,且以自一側對向電極2a跨及另一側對向電極2b之方式配設。The ESD protection device 4 includes a counter electrode 2 having a distal end portion and a counter electrode 2a and a counter electrode 2b on the other side of the discharge gap portion 10 that generates a discharge when ESD is applied; and a discharge auxiliary electrode 3. The first counter electrode 2a and the other counter electrode 2b are connected to each other, and are disposed so as to straddle the counter electrode 2a from the other side and the counter electrode 2b.

且,以面向設置於磁性基材1內部之空洞部12之方式配設放電間隙部10,並在磁性基材1之露出於空洞部12之區域配設有保護絕緣層4。另,保護絕緣層4亦以介隔於一側對向電極2a及另一側對向電極2b之前端部與上述放電輔助電極3之連接部及磁性基材1之間之方式形成。Further, the discharge gap portion 10 is disposed so as to face the cavity portion 12 provided inside the magnetic base material 1, and the protective insulating layer 4 is disposed in a region where the magnetic base material 1 is exposed to the cavity portion 12. Further, the protective insulating layer 4 is also formed to be interposed between the front end electrode 2a and the connecting portion between the front end portion of the other counter electrode 2b and the discharge auxiliary electrode 3 and the magnetic base material 1.

又,該ESD保護裝置A4具備外部電極5a、5b,其係以與構成對向電極2之一側對向電極2a及另一側對向電極2b導通之方式配設於磁性基材1之兩端部,用以與外部電性連接。Further, the ESD protection device A4 includes external electrodes 5a and 5b which are disposed on the magnetic substrate 1 so as to be electrically connected to the opposite electrode 2a and the other opposite electrode 2b constituting the counter electrode 2. The end is for electrically connecting to the outside.

另,第1至第4之ESD保護裝置A1至A4中,作為磁性基材1,使用含有玻璃成分之鐵氧體材料之情形,可於低溫燒結,且可提高保護絕緣層4與磁性基材1之密著性。Further, in the first to fourth ESD protection devices A1 to A4, as the magnetic substrate 1, a ferrite material containing a glass component is used, which can be sintered at a low temperature, and the protective insulating layer 4 and the magnetic substrate can be improved. 1 closeness.

又,保護絕緣層4係以含有結晶性無機氧化物與玻璃成分之材料形成之層,該實施例中,其係藉由熱處理包含例如Al2 O3 、BaO、CaO、TiO2 、CeO、MgO、及ZnO等之氧化物與玻璃料之絕緣糊料而形成。Further, the protective insulating layer 4 is a layer formed of a material containing a crystalline inorganic oxide and a glass component, and in this embodiment, it contains, for example, Al 2 O 3 , BaO, CaO, TiO 2 , CeO, MgO by heat treatment. And an oxide of ZnO or the like and an insulating paste of the glass frit.

以上,乃顯示第1至第4之ESD保護裝置A1至A4,但本發明之範圍內亦可進而包含各種構成。The above-described first to fourth ESD protection devices A1 to A4 are shown, but various configurations may be further included in the scope of the present invention.

上述第1至第4之ESD保護裝置A1至A4中,磁性基材1並未直接露出於放電間隙部10,而藉由保護絕緣層4予以保護,故在反復施加ESD之情形下,亦可抑制、防止磁性基材導體化而發生短路不良,可提供高可靠性之ESD保護裝置。In the above-described first to fourth ESD protection devices A1 to A4, the magnetic substrate 1 is not directly exposed to the discharge gap portion 10, but is protected by the protective insulating layer 4, so that in the case where ESD is repeatedly applied, It suppresses and prevents the magnetic substrate from being conductorized and short-circuit defects occur, providing a highly reliable ESD protection device.

又,在上述第1及第3之ESD保護裝置中,由於保護絕緣層4不但配設於放電間隙部10,而且超出該放電間隙部10而配設至一側對向電極2a及另一側對向電極2b之前端部與磁性基材1之間之區域,故可更確實防止磁性基材1導體化,可使本發明更有效。Further, in the first and third ESD protection devices, the protective insulating layer 4 is disposed not only in the discharge gap portion 10 but also on the one side opposite electrode 2a and the other side beyond the discharge gap portion 10. Since the region between the front end portion of the counter electrode 2b and the magnetic substrate 1 is prevented, the magnetic base material 1 can be more reliably prevented from being electrified, and the present invention can be more effectively used.

又,因保護絕緣層4含有結晶性無機氧化物,故即使在反復施加ESD之情形下,亦可更確實防止磁性基材導體化。Moreover, since the protective insulating layer 4 contains a crystalline inorganic oxide, even when ESD is repeatedly applied, the magnetic base material can be more reliably prevented from being formed.

再者,因磁性基材1及保護絕緣層4含有玻璃成分,故可提高保護絕緣層4與磁性基材1之密著性。另,只要磁性基材1及保護絕緣層4之至少一方含有玻璃成分,即可獲得上述效果。Further, since the magnetic base material 1 and the protective insulating layer 4 contain a glass component, the adhesion between the protective insulating layer 4 and the magnetic base material 1 can be improved. Further, as long as at least one of the magnetic base material 1 and the protective insulating layer 4 contains a glass component, the above effects can be obtained.

又,在上述第2及第4ESD之保護裝置中,因保護絕緣層4以介隔於一側對向電極2a及另一側對向電極2b之前端部與上述放電補助電極3之連接部、與磁性基材1之間之方式形成,故可更確實防止磁性基材1導體化,並可使本發明更有效。Further, in the second and fourth ESD protection devices, the protective insulating layer 4 is interposed between the front end electrode 2a and the other end portion of the opposite electrode 2b and the discharge auxiliary electrode 3, Since it is formed between the magnetic base material 1, the magnetic base material 1 can be more reliably prevented from being electrically formed, and the present invention can be made more effective.

又,上述第3及第4之ESD保護裝置之情形,因磁性基材1之內部設置有空洞部12,且放電間隙部10以面向空洞部12之方式構成,故可在磁性基材1內部進行放電,可提升可靠性。Further, in the case of the third and fourth ESD protection devices described above, since the cavity portion 12 is provided inside the magnetic substrate 1, and the discharge gap portion 10 is formed to face the cavity portion 12, it can be inside the magnetic substrate 1. Discharge can improve reliability.

另,如該第3及第4之ESD保護裝置之情形,放電間隙部10配設於磁性基材之空洞部12之情形,雖然空洞部內周面有易產生絕緣劣化之傾向,但藉由在磁性基材1之於空洞部12露出之區域配設保護絕緣層4,可抑制絕緣劣化並維持良好特性。Further, in the case of the third and fourth ESD protection devices, the discharge gap portion 10 is disposed in the cavity portion 12 of the magnetic substrate, and although the inner peripheral surface of the cavity portion tends to be deteriorated in insulation, it is The protective insulating layer 4 is disposed in the region of the magnetic substrate 1 where the cavity portion 12 is exposed, thereby suppressing insulation degradation and maintaining good characteristics.

[實施例1][Example 1]

以下,顯示本發明之ESD保護裝置之製造方法,且顯示具體實施例,並進而詳細說明本發明之特徵。Hereinafter, a method of manufacturing the ESD protection device of the present invention will be described, and specific embodiments will be described, and features of the present invention will be described in detail.

另,該實施例1中,如圖3及圖4所示,以具備:磁性基材1、對向電極2、放電輔助電極3、配設於放電輔助電極3與磁性基材1之間之保護絕緣層4、及外部電極5a、5b之ESD保護裝置(上述第2之ESD保護裝置)為例予以說明。Further, in the first embodiment, as shown in FIGS. 3 and 4, the magnetic substrate 1, the counter electrode 2, the discharge auxiliary electrode 3, and the discharge auxiliary electrode 3 and the magnetic substrate 1 are disposed. The ESD protection device (the second ESD protection device described above) that protects the insulating layer 4 and the external electrodes 5a and 5b will be described as an example.

[ESD保護裝置之製造][Manufacture of ESD protection device] (1) 製作磁性基材(1) Making a magnetic substrate

作為磁性基材,準備厚度約500 μm之(Ni、Cu、Zn)Fe2 O4 系磁性基材(鐵氧體基板)。且,將該磁性基材切成500 μm寬、1000 μm長作為磁性基材1(參照圖3、圖4)。As the magnetic substrate, a (Ni, Cu, Zn)Fe 2 O 4 -based magnetic substrate (ferrite substrate) having a thickness of about 500 μm was prepared. Further, the magnetic substrate was cut into a magnetic substrate 1 having a width of 500 μm and a length of 1000 μm (see FIGS. 3 and 4).

(2) 製作對向電極糊料(2) Making the opposite electrode paste

又,調製平均粒徑約1 μm之Ag粉末75%重量、轉變點620℃,軟化點720℃之平均粒徑約1 μm之硼矽酸鹽系玻璃料5%重量、及將乙基纖維素溶解於松油醇製作之有機載劑20%重量,藉由以3輥混合製作對向電極糊料,作為用以形成一對對向電極2a、2b之對向電極糊料。Further, a borosilicate-based glass frit having a mean particle diameter of about 1 μm, 75% by weight of Ag powder, a transition point of 620 ° C, a softening point of 720 ° C, an average particle diameter of about 1 μm, and an ethyl cellulose The counter electrode paste was prepared by dissolving 20% by weight of an organic carrier prepared from terpineol as a counter electrode paste for forming a pair of counter electrodes 2a and 2b by mixing in three rolls.

另,用於本實施例之上述Cu粉、硼矽酸鹽系玻璃料、下述之Ag粉末、碳化矽粉末、及其他各種原料粉末之平均粒徑係自藉由MICROTRAC之粒度分布測定求得之中心粒徑(D50)。Further, the average particle diameters of the Cu powder, the borosilicate-based glass frit used in the present embodiment, the following Ag powder, the niobium carbide powder, and various other raw material powders are determined by the particle size distribution measurement of MICROTRAC. The center particle size (D50).

(3) 製作放電輔助電極糊料(3) Making discharge auxiliary electrode paste

調製平均粒徑約3 μm、氧化鋁塗層量約5%重量之Ag粉末50%重量、平均粒徑約0.5 μm之碳化矽粉末5%重量、及將乙基纖維素溶解於松油醇製作之有機載劑45%重量,藉由以3輥混合製作放電補助電極糊料,作為用以形成放電輔助電極3之放電輔助電極糊料。Preparation of an average particle diameter of about 3 μm, an alumina coating amount of about 5% by weight of Ag powder 50% by weight, an average particle diameter of about 0.5 μm of 5% by weight of niobium carbide powder, and dissolution of ethyl cellulose in terpineol The organic carrier was 45% by weight, and a discharge-assisted electrode paste was prepared by mixing in three rolls as a discharge auxiliary electrode paste for forming the discharge auxiliary electrode 3.

(4) 製作用以形成保護絕緣層之絕緣層糊料(4) Making an insulating layer paste for forming a protective insulating layer

調製記述於表1之氧化物、軟化點為800℃且平均粒徑約1 μm之硼矽酸鹽系玻璃料(表3之GF-1)、及記述於表2之有機載劑,藉由以3輥混合製作記述於表3之絕緣層糊料。The borosilicate-based glass frit (GF-1 of Table 3) having an oxide of Table 1, an softening point of 800 ° C and an average particle diameter of about 1 μm, and an organic carrier described in Table 2 were prepared by The insulating layer paste described in Table 3 was produced by mixing in three rolls.

另,保護絕緣層之作用係抑制在ESD施加時產生之放電接觸磁性基材,進而抑制因放電導致磁性基材之絕緣電阻劣化。因此,保護絕緣層之構成材料係有必要為「接觸放電亦不會降低絕緣電阻之材料(≧106 Ω)」。若滿足上述條件,則保護絕緣膜之構成材料並不特別限定於此。Further, the function of the protective insulating layer suppresses the discharge contact with the magnetic substrate generated at the time of ESD application, thereby suppressing deterioration of the insulation resistance of the magnetic substrate due to the discharge. Therefore, the constituent material of the protective insulating layer is required to be "a material that does not reduce the insulation resistance by contact discharge (≧10 6 Ω)". When the above conditions are satisfied, the constituent material of the protective insulating film is not particularly limited thereto.

作為構成該保護絕緣層之材料,可單獨或混合使用例如,氧化鋁、二氧化矽等已知之結晶性無機氧化物、或硼矽酸系、硼矽酸鹽系等已知之玻璃料。另,自確保保護絕緣層與磁性基材之密著性之角度觀之,較好為混合使用結晶性無機氧化物與玻璃料。As the material constituting the protective insulating layer, for example, a known crystalline inorganic oxide such as alumina or ceria, or a known glass frit such as a boronic acid or borax may be used alone or in combination. Further, from the viewpoint of ensuring the adhesion between the protective insulating layer and the magnetic substrate, it is preferred to use a combination of a crystalline inorganic oxide and a glass frit.

又,使用於本發明之玻璃料之組成、粒徑、軟化點雖未特別限定,但通常,較好使用軟化點為500℃至800℃之範圍者。藉由使用軟化點為800℃以下者,可確實防止在焙燒時玻璃料擴散入磁性基材中使磁性基材之磁氣特性劣化,又,藉由使用軟化點為500℃以上者,可確實防止焙燒後之保護絕緣層與磁性基材之密著性劣化。Further, the composition, particle diameter, and softening point of the glass frit used in the present invention are not particularly limited, but usually, the softening point is preferably in the range of 500 ° C to 800 ° C. By using a softening point of 800 ° C or less, it is possible to surely prevent the glass frit from being diffused into the magnetic substrate during firing to deteriorate the magnetic properties of the magnetic substrate, and it is possible to use a softening point of 500 ° C or higher. The adhesion between the protective insulating layer and the magnetic substrate after baking is prevented from deteriorating.

(5) 製作外部電極糊料(5) Making external electrode paste

調製平均粒徑約1 μm之Ag粉末80%重量、轉變點620℃、軟化點720℃且平均粒徑約1 μm之硼矽酸鹽系玻璃料5%重量、及將乙基纖維素溶解於松油醇製作之有機載劑15%重量,且藉由以3輥混合,製作外部電極糊料。80% by weight of Ag powder having an average particle diameter of about 1 μm, a conversion point of 620 ° C, a softening point of 720 ° C, a borosilicate-based glass frit having an average particle diameter of about 1 μm, 5% by weight, and dissolving ethyl cellulose in An organic carrier prepared from terpineol was 15% by weight, and an external electrode paste was prepared by mixing in three rolls.

(6) 各糊料之印刷、生坏ESD保護裝置之製作(6) Production of various pastes and production of ESD protection devices

於各種磁性基材之一主面,如圖7(a)所示,藉由按絕緣層糊料、放電輔助電極糊料之順序塗布(印刷),而於磁性基材1上,形成未焙燒之保護絕緣層4、及未焙燒之放電輔助電極3。As shown in FIG. 7(a), one of the main surfaces of the various magnetic substrates is coated (printed) in the order of the insulating layer paste and the discharge auxiliary electrode paste, and unbaked on the magnetic substrate 1. The protective insulating layer 4 and the unfired discharge auxiliary electrode 3.

其次,如圖7(b)所示,塗布對向電極糊料,形成未焙燒之對向電極2。Next, as shown in FIG. 7(b), the counter electrode paste is applied to form the unfired counter electrode 2.

其次,於積層體之表層,以連接對向電極之方式塗布外部電極糊料,如圖7(c)所示形成未焙燒之外部電極5a、5b,獲得生坏ESD保護裝置A2。Next, the external electrode paste is applied to the surface layer of the laminate by connecting the counter electrodes, and the unfired external electrodes 5a and 5b are formed as shown in Fig. 7(c) to obtain the raw ESD protection device A2.

(7) 焙燒(7) Roasting

如上所述製作後,在大氣環境氣體下焙燒該生坏ESD保護裝置A2,獲得具有如圖3及圖4所示之構造之ESD保護裝置A2。After the fabrication as described above, the raw ESD protection device A2 is fired under atmospheric ambient gas to obtain an ESD protection device A2 having the configuration shown in Figs.

該實施例1中,在焙燒後之階段,獲得構成對向電極2之一側對向電極2a、另一側對向電極2b之寬W為120 μm、且放電間隙10之尺寸G為20 μm之ESD保護裝置。In the first embodiment, at the stage after the firing, the width W of the one side counter electrode 2a and the other side counter electrode 2b constituting the counter electrode 2 is 120 μm, and the size G of the discharge gap 10 is 20 μm. ESD protection device.

另,在該實施例1中,為評價特性,使用如表3所示之絕緣層糊料P1至P15作為絕緣層糊料,製作具有圖3及圖4所示構造之ESD保護裝置(表4之試料序號1至14之試料)。Further, in the first embodiment, in order to evaluate the characteristics, the insulating layer pastes P1 to P15 shown in Table 3 were used as the insulating layer paste, and an ESD protection device having the structure shown in Figs. 3 and 4 was produced (Table 4). Samples of sample numbers 1 to 14).

又,為作比較,製作未具備保護絕緣層之ESD保護裝置(表4之試料序號15之試料)。Further, for comparison, an ESD protection device (sample No. 15 of the sample No. 15 of Table 4) which does not have a protective insulating layer was produced.

[特性評價][Feature evaluation]

其次,關於如上述製作之各ESD保護裝置(試料),以如下方法調查特性。Next, regarding each of the ESD protection devices (samples) produced as described above, the characteristics were investigated by the following methods.

(1) 放電特性V峰值(Vpeak)及V箝制(Vclamp)(1) Discharge characteristics V peak (Vpeak) and V clamp (Vclamp)

基於IEC之規格、IEC61000-4-2,在8 kV之接觸放電時,自峰值電壓值:V峰值、及自波頭值30 ns後之電壓值:V箝制。施加次數為各試料20次。Based on IEC specifications, IEC61000-4-2, at 8 kV contact discharge, from peak voltage value: V peak value, and self-wave head value 30 ns after voltage value: V clamp. The number of applications was 20 times for each sample.

且,以V峰值之最大值未滿500 V之試料判定為特優(◎)、500至900 V之試料判定為良好(○、超過900 V之試料判定為不良(×)。Further, the sample having a maximum value of V peak of less than 500 V was judged to be excellent (?), and a sample of 500 to 900 V was judged to be good (○, and a sample exceeding 900 V was judged to be defective (×).

又,以V箝制之最大值未滿500 V之試料判定為特優(◎),500至900V之試料判定為良好(○),超過900 V之試料判定為不良(×)。Further, the sample having a maximum value of V clamp of less than 500 V was judged to be excellent (?), the sample of 500 to 900 V was judged to be good (○), and the sample exceeding 900 V was judged to be defective (×).

(2) 反復特性(2) Repeated characteristics

反復1000發8 kV之接觸放電,測定1000發後之ESD保護裝置之電阻值。The contact discharge of 8 kV was repeated 1000 times, and the resistance value of the ESD protection device after 1000 rounds was measured.

且,以電阻值(LogIR值)超過6之試料判定為特優(◎),3至6之試料判定為良好(○),未滿3之試料判定為不良(×)。Further, the sample having a resistance value (LogIR value) of more than 6 was judged to be excellent (?), the sample of 3 to 6 was judged to be good (?), and the sample of less than 3 was judged to be defective (x).

(3) 綜合評價(3) Comprehensive evaluation 在放電特性及反復特性中,將有一項判定為「特優(◎)」之試料判定為「特優(◎)」,一項判定為「不良(×)」之試料判定為「不良(×)」,其以外之試料判定為「良好(○)」。Among the discharge characteristics and the repetitive characteristics, one sample judged as "excellent (◎)" was judged as "excellent (◎)", and one sample judged as "poor (x)" was judged as "poor (X ), the other samples were judged as "good (○)". 上述評價特性之結果示於表5。The results of the above evaluation characteristics are shown in Table 5.

如表5所示,在滿足本發明之要件,且具備保護絕緣層之試料序號1至14之ESD保護裝置中,確認獲得放電特性及反復特性均為良好以上之特性。As shown in Table 5, in the ESD protection apparatuses of Sample Nos. 1 to 14 which satisfy the requirements of the present invention and have the protective insulating layers, it was confirmed that the discharge characteristics and the repeat characteristics were all good or not.

特別,使用含有玻璃成分之保護絕緣層之試料序號3至6之ESD保護裝置之反復特性較其他試料更佳。此認為係磁性基材與保護絕緣層之密著性高,即使反復施加ESD,保護絕緣層亦難以自磁性基材剝離或飛散之故。In particular, the repetitive characteristics of the ESD protection devices of Sample Nos. 3 to 6 using the protective insulating layer containing the glass component were better than those of the other samples. It is considered that the magnetic base material and the protective insulating layer have high adhesion, and even if ESD is repeatedly applied, the protective insulating layer is hard to be peeled off or scattered from the magnetic base material.

另一方面,未具備保護絕緣層之試料序號15之ESD保護裝置係反復特性不良,綜合評定為「不良(×)」,而無法供於實用者。其係推測為因反復施加ESD而放電,使磁性基材發生導體化。On the other hand, the ESD protection device of the sample No. 15 which does not have the protective insulating layer has poor repeatability, and is comprehensively evaluated as "defective (x)", and cannot be supplied to a practical person. This is presumed to be caused by repeated application of ESD, and the magnetic substrate is electrically formed.

[實施例2][Embodiment 2]

該實施例2中,如圖6所示,以具備磁性基材1、對向電極2、放電輔助電極3、配設於放電輔助電極3與磁性基材1之間之保護絕緣層4、及外部電極5a、5b,且放電間隙部10以面向磁性基材1之空洞部12之方式配設之ESD保護裝置(上述第4之ESD保護裝置)為例予以說明。In the second embodiment, as shown in FIG. 6, the magnetic base material 1, the counter electrode 2, the discharge auxiliary electrode 3, the protective insulating layer 4 disposed between the discharge auxiliary electrode 3 and the magnetic substrate 1, and The external electrodes 5a and 5b and the ESD protection device (the fourth ESD protection device described above) disposed so as to face the cavity portion 12 of the magnetic substrate 1 will be described as an example.

(1) 製作磁性體生坏片(1) Making magnetic body and bad film

焙燒後,將成為磁性基材((Ni、Cu、Zn)Fe2 O4 系磁性基材)之各原料調製成特定組成,並藉由混合、焙燒求得焙燒粉末。After the calcination, each of the raw materials of the magnetic substrate ((Ni, Cu, Zn) Fe 2 O 4 -based magnetic substrate) was prepared into a specific composition, and the calcined powder was obtained by mixing and calcining.

其次,將該焙燒粉末以氧化鋯球磨機粉碎12小時,獲得陶瓷粉末(鐵氧體粉末)。Next, the calcined powder was pulverized in a zirconia ball mill for 12 hours to obtain a ceramic powder (ferrite powder).

於該陶瓷粉末中添加甲苯‧液體醇等之有機溶液並混合。進而添加縮丁醛樹脂、可塑劑並混合,獲得漿料。An organic solution such as toluene/liquid alcohol is added to the ceramic powder and mixed. Further, a butyral resin, a plasticizer, and a mixture were added to obtain a slurry.

將藉此獲得之漿料,利用刮刀成形法成形,獲得厚度為50 μm之磁性體生坏片。The slurry thus obtained was molded by a doctor blade molding method to obtain a magnetic green sheet having a thickness of 50 μm.

(2) 準備各種糊料(2) Prepare various pastes

準備與實施例1相同之糊料作為對向電極糊料、絕緣層糊料、放電輔助糊料、及外部電極糊料,作為用以形成對向電極、保護絕緣層、放電輔助電極、及外部電極之糊料。The same paste as in Example 1 was prepared as a counter electrode paste, an insulating layer paste, a discharge auxiliary paste, and an external electrode paste as a counter electrode, a protective insulating layer, a discharge auxiliary electrode, and an external portion. Electrode paste.

又,作為用以形成空洞部之糊料,調製平均粒徑約1 μm之交聯丙烯酸樹脂顆粒38%重量、及將乙基纖維素溶解於二氫萜品基乙酸酯製作之有機載劑62%重量,藉由以3輥混合,製作以焙燒步驟分解,燃燒並消失之空洞部形成用糊料。Further, as a paste for forming a cavity portion, 38% by weight of crosslinked acrylic resin particles having an average particle diameter of about 1 μm and an organic carrier prepared by dissolving ethyl cellulose in dihydrofurfuryl acetate are prepared. 62% by weight, by mixing in three rolls, a cavity forming paste which was decomposed by the baking step and burned and disappeared was produced.

(3) 印刷各糊料(3) Printing each paste

在如上所述製作之磁性體生坏片1a之一主面上,如圖8所示,塗布絕緣層糊料、放電輔助電極糊料、及對向電極糊料,形成未焙燒之保護絕緣層4、未焙燒之放電輔助電極3、及未焙燒之對向電極2。On one main surface of the magnetic green sheet 1a produced as described above, as shown in FIG. 8, an insulating layer paste, a discharge auxiliary electrode paste, and a counter electrode paste are applied to form an unfired protective insulating layer. 4. The unfired discharge auxiliary electrode 3 and the unfired counter electrode 2.

其次,如圖9所示,自未焙燒之對向電極2及放電輔助電極3上之欲形成空洞部12(參照圖6)之區域上,塗布空洞部形成用之樹脂糊料22,進而自其上以被覆空洞部形成用之樹脂糊料22之方式,塗佈絕緣層糊料而形成未焙燒之保護絕緣層4。Next, as shown in FIG. 9, the resin paste 22 for forming a cavity portion is applied from the unfired counter electrode 2 and the discharge auxiliary electrode 3 in a region where the cavity portion 12 (see FIG. 6) is to be formed, and further, The insulating layer paste is applied to form the unfired protective insulating layer 4 so as to cover the resin paste 22 for forming the cavity portion.

(4) 積層、壓接(4) Lamination and crimping

如上述,在以依絕緣層糊料、放電輔助電極糊料、對向電極糊料、樹脂糊料、及絕緣層糊料之順序塗布各糊料之磁性體生坏片(第1之磁性體生坏片)上,如圖10所示,積層未塗布糊料之第2磁性體生片1b,藉由壓接形成未焙燒之積層體(未具備外部電極之未焙燒之ESD保護裝置)。此處焙燒後形成厚度為500 μm之積層體。As described above, the magnetic raw sheet for each paste is applied in the order of the insulating layer paste, the discharge auxiliary electrode paste, the counter electrode paste, the resin paste, and the insulating layer paste (the first magnetic body) As shown in Fig. 10, a second magnetic green sheet 1b to which a paste is not applied is laminated, and an unfired laminated body (an unfired ESD protection device not provided with an external electrode) is formed by pressure bonding. After the firing, a laminate having a thickness of 500 μm was formed.

(5) 切斷、外部電極糊料之塗布(5) Cutting, coating of external electrode paste

以微切割器切斷積層體,分割為各晶片。此處,以焙燒後成為長1.0 mm、寬0.5 mm之方式切割。其後,在端面塗布外部電極糊料並形成未焙燒之外部電極。The laminate was cut by a micro cutter and divided into individual wafers. Here, it is cut so as to be 1.0 mm long and 0.5 mm wide after firing. Thereafter, the external electrode paste is applied to the end faces and an unfired external electrode is formed.

(6) 焙燒(6) Roasting

其次,藉由將塗布外部電極糊料之晶片在N2 環境氣體中焙燒,獲得具有如圖6所示構造之ESD保護裝置。Next, an ESD protection device having the configuration shown in Fig. 6 was obtained by firing a wafer coated with an external electrode paste in an N 2 atmosphere.

另,在該實施例2中,亦於焙燒後之階段使構成對向電極2之一側對向電極2a、另一側對向電極2b之寬成為120 μm、放電間隙10之尺寸為20 μm。Further, in the second embodiment, the width of one side counter electrode 2a and the other counter electrode 2b constituting the counter electrode 2 is 120 μm at the stage after firing, and the size of the discharge gap 10 is 20 μm. .

該實施例2中,為評價特性,使用如表3所示之絕緣層糊料P1至P15作為絕緣層糊料,製作具有如圖6所示具備空洞部構造之ESD保護裝置(表6之試料序號16至29之試料)。In the second embodiment, in order to evaluate the characteristics, the insulating layer pastes P1 to P15 shown in Table 3 were used as the insulating layer paste, and an ESD protection device having a cavity portion structure as shown in FIG. 6 was produced (sample of Table 6). Sample Nos. 16 to 29).

又,為作比較,製作未具備保護絕緣層之ESD保護裝置(表6之試料序號30之試料)。Further, for comparison, an ESD protection device (sample No. 30 of the sample No. 30 of Table 6) which does not have a protective insulating layer was produced.

[特性之評價][Feature evaluation]

其次,關於如上製作之各ESD保護裝置(試料),以與上述實施例1相同之方法及基準,以下述方法測定各特性並評價。其結果如表6所示。Next, each of the ESD protection devices (samples) produced as described above was measured and evaluated by the following method in the same manner and with reference to the above-described Example 1. The results are shown in Table 6.

在滿足本發明之要件,且具備保護絕緣層之試料序號1至14之ESD保護裝置中,確認獲得放電特性及反復特性均為良好以上之特性。In the ESD protection apparatus of Sample Nos. 1 to 14 which provided the protective insulating layer, which satisfies the requirements of the present invention, it was confirmed that the discharge characteristics and the repeatability were both excellent.

尤其,使用含有玻璃成分之保護絕緣層之試料序號18至21之ESD保護裝置之反復特性較其他試料更佳。其認為係由於磁性基材與保護絕緣層之密著性高,反復施加ESD,保護絕緣層亦難以自磁性基材剝離或飛散之故。In particular, the ESD protection device of Sample Nos. 18 to 21 using a protective insulating layer containing a glass component has better repeatability than the other samples. It is considered that the adhesion between the magnetic substrate and the protective insulating layer is high, and ESD is repeatedly applied, and the protective insulating layer is also difficult to be peeled off or scattered from the magnetic substrate.

另一方面,未具備保護絕緣層之試料序號15之ESD保護裝置係反復特性不良,無法供於實用者。其係推測係因反復施加ESD之放電,使磁性基材發生導體化。On the other hand, the ESD protection device of the sample No. 15 which does not have the protective insulating layer has poor repeatability and cannot be provided to a practical person. It is presumed that the magnetic substrate is electrically formed by repeated application of ESD discharge.

另,上述實施例1及2中,雖然以具有如圖3、4所示具備放電輔助電極構造之ESD保護裝置(實施例1)、及進而具有如圖6所示具備空洞部構造之ESD保護裝置為例予以說明,但在未具備放電輔助電極構造之ESD保護裝置,與未具備放電輔助電極及空洞部構造之ESD保護裝置中,亦因具備保護絕緣層,確認獲得以上述實施例1及2之ESD保護裝置為準之良好特性。Further, in the above-described first and second embodiments, the ESD protection device having the discharge auxiliary electrode structure as shown in FIGS. 3 and 4 (the first embodiment) and the ESD protection having the cavity portion structure as shown in FIG. 6 are provided. The device is described as an example. However, in the ESD protection device that does not have the discharge auxiliary electrode structure, and the ESD protection device that does not have the discharge auxiliary electrode and the cavity structure, the protective insulating layer is also provided. The ESD protection device of 2 is of good quality.

由上述實施例1及2,若總結自本發明之ESD保護裝置獲得之作用效果,則大體如下所述。From the above-described Embodiments 1 and 2, if the effects obtained by the ESD protection device of the present invention are summarized, they are generally as follows.

(a) 藉由具備保護絕緣層之構造,可防止因反復施加ESD之放電致使磁性基材導體化,且可抑制短路不良之發生。(a) By providing a structure for protecting the insulating layer, it is possible to prevent the magnetic substrate from being electrically conductive due to repeated discharge of ESD, and it is possible to suppress occurrence of short-circuit defects.

(b) 藉由使用以結晶性無機氧化物作為主成分者作為保護絕緣層,可更確實抑制防止因反復施加ESD之放電致使磁性基材導體化,並可實現高可靠性。(b) By using a crystalline inorganic oxide as a main component as a protective insulating layer, it is possible to more reliably prevent the magnetic substrate from being electrically conductive due to repeated discharge of ESD, and high reliability can be achieved.

(c) 藉由使保護絕緣層含有玻璃成分,可提高磁性基材與絕緣層之密著性,可實現高反復特性。(c) By including the glass component in the protective insulating layer, the adhesion between the magnetic substrate and the insulating layer can be improved, and high repeatability can be achieved.

又,本發明係不限定於上述實施例,關於本發明中構成磁性基材之材料之種類與組成、保護絕緣層之構成材料、其具體形狀、對向電極與放電補助電極之構成材料與具體形狀、及空洞部之形狀等,可在不脫離本發明之範圍內進行各種應用,變更。Further, the present invention is not limited to the above embodiment, and the type and composition of the material constituting the magnetic substrate, the constituent material of the protective insulating layer, the specific shape thereof, the constituent materials of the counter electrode and the discharge auxiliary electrode, and the specific The shape, the shape of the cavity, and the like can be variously changed and changed without departing from the scope of the invention.

1...磁性基材1. . . Magnetic substrate

1a...第1之磁性體生坏片1a. . . The first magnetic body is a bad piece

1b...第2之磁性體生坏片1b. . . The second magnetic body is a bad piece

2...對向電極2. . . Counter electrode

2a...構成對向電極之一側之對向電極2a. . . a counter electrode constituting one side of the counter electrode

2b...構成對向電極之另一側對向電極2b. . . The other opposite counter electrode

3...放電輔助電極3. . . Discharge auxiliary electrode

4...保護絕緣層4. . . Protective insulation

5a...外部電極5a. . . External electrode

5b...外部電極5b. . . External electrode

10...放電間隙部10. . . Discharge gap

12...空洞部12. . . Cavity

22...樹脂糊料twenty two. . . Resin paste

A1...ESD保護裝置A1. . . ESD protection device

A2...ESD保護裝置A2. . . ESD protection device

A3...ESD保護裝置A3. . . ESD protection device

A4...ESD保護裝置A4. . . ESD protection device

G...放電間隙部之尺寸G. . . Dimension of discharge gap

W...對向電極之寬W. . . Alignment electrode width

圖1係顯示放電間隙部配設於磁性基材表面之本發明之實施例之第1之ESD保護裝置之構成的正面剖面圖。Fig. 1 is a front cross-sectional view showing the configuration of a first ESD protection device according to an embodiment of the present invention in which a discharge gap portion is disposed on a surface of a magnetic substrate.

圖2係顯示放電間隙部配設於磁性基材表面之本發明之實施例之第1之ESD保護裝置之構成的平面圖。Fig. 2 is a plan view showing the configuration of the first ESD protection device according to the first embodiment of the present invention in which the discharge gap portion is disposed on the surface of the magnetic substrate.

圖3係顯示放電間隙部配設於磁性基材表面之本發明之實施例之第2之ESD保護裝置之構成的正面剖面圖。Fig. 3 is a front cross-sectional view showing the configuration of a second ESD protection device according to an embodiment of the present invention in which a discharge gap portion is disposed on a surface of a magnetic substrate.

圖4係顯示放電間隙部配設於磁性基材表面之本發明之實施例之第2之ESD保護裝置之構成的平面圖。Fig. 4 is a plan view showing the configuration of a second ESD protection device according to a second embodiment of the present invention in which a discharge gap portion is disposed on a surface of a magnetic substrate.

圖5係顯示放電間隙部配設於磁性基材之空洞部之本發明之實施例之第3之ESD保護裝置之構成的正面剖面圖。Fig. 5 is a front cross-sectional view showing the configuration of a third ESD protection device according to a third embodiment of the present invention in which a discharge gap portion is disposed in a cavity portion of a magnetic substrate.

圖6係顯示放電間隙部配設於磁性基材之空洞部之本發明之實施例之第4之ESD保護裝置之構成的正面剖面圖。Fig. 6 is a front cross-sectional view showing the configuration of a fourth ESD protection device according to a fourth embodiment of the present invention in which a discharge gap portion is disposed in a cavity portion of a magnetic substrate.

圖7(a)至(c)係說明本發明之實施例之第2之ESD保護裝置之製造方法之圖。7(a) to 7(c) are views showing a method of manufacturing the second ESD protection device according to the embodiment of the present invention.

圖8係顯示本發明之實施例之第4之ESD保護裝置之製造方法之一步驟之圖。Fig. 8 is a view showing a step of a method of manufacturing the fourth ESD protection device of the fourth embodiment of the present invention.

圖9係顯示本發明之實施例之第4之ESD保護裝置之製造方法之其他之一步驟之圖。Fig. 9 is a view showing another step of the method of manufacturing the fourth ESD protection device according to the fourth embodiment of the present invention.

圖10係顯示本發明之實施例之第4之ESD保護裝置之製造方法之又其他一步驟之圖。Fig. 10 is a view showing still another step of the method of manufacturing the fourth ESD protection device according to the fourth embodiment of the present invention.

1...磁性基材1. . . Magnetic substrate

2...對向電極2. . . Counter electrode

2a...構成對向電極之一側之對向電極2a. . . a counter electrode constituting one side of the counter electrode

2b...構成對向電極之另一側對向電極2b. . . The other opposite counter electrode

3...放電輔助電極3. . . Discharge auxiliary electrode

4...保護絕緣層4. . . Protective insulation

5a...外部電極5a. . . External electrode

5b...外部電極5b. . . External electrode

10...放電間隙部10. . . Discharge gap

A2...ESD保護裝置A2. . . ESD protection device

Claims (8)

一種靜電放電保護裝置,其特徵在於包含:磁性基材,其係含有玻璃成分;對向電極,其係於上述磁性基材之表面或內部,包含以前端部間隔開而相互對向之方式形成之一側對向電極與另一側對向電極,上述一側對向電極與上述另一側對向電極之前端部間構成為在ESD施加時產生放電之放電間隙部;及保護絕緣層,其係至少配設於上述磁性基材之表面或內部之面向上述放電間隙部之區域,防止因放電使上述磁性基材之絕緣性劣化。 An electrostatic discharge protection device comprising: a magnetic substrate comprising a glass component; and a counter electrode connected to the surface or the inside of the magnetic substrate, wherein the front end portion is spaced apart from each other and formed to face each other One side opposite electrode and the other opposite electrode, wherein the one side opposite electrode and the other side opposite electrode form a discharge gap portion that generates a discharge when ESD is applied; and a protective insulating layer, It is disposed at least on a surface of the magnetic substrate or in a region facing the discharge gap portion to prevent deterioration of insulation properties of the magnetic substrate due to discharge. 如請求項1之靜電放電保護裝置,其中於上述一側對向電極之前端部及上述另一側對向電極之前端部與上述磁性基材之間亦配設有上述保護絕緣層。 The electrostatic discharge protection device according to claim 1, wherein the protective insulating layer is disposed between the front end portion of the one opposite counter electrode and the front end portion of the other opposite counter electrode and the magnetic base material. 如請求項1之靜電放電保護裝置,其中上述保護絕緣層含有玻璃成分。 The electrostatic discharge protection device of claim 1, wherein the protective insulating layer contains a glass component. 如請求項1之靜電放電保護裝置,其中於上述磁性基材之內部設置有空洞部,且上述放電間隙部面向上述空洞部。 The electrostatic discharge protection device of claim 1, wherein a cavity portion is provided inside the magnetic substrate, and the discharge gap portion faces the cavity portion. 如請求項4之靜電放電保護裝置,其中於上述磁性基材之露出於上述空洞部之區域配設有上述保護絕緣層。 The electrostatic discharge protection device according to claim 4, wherein the protective insulating layer is disposed in a region of the magnetic substrate exposed to the cavity portion. 一種靜電放電保護裝置,其特徵在於包含:磁性基材,其係含有玻璃成分;對向電極,其係於上述磁性基材之表面或內部,包含 以前端部間隔開而相互對向之方式形成之一側對向電極與另一側對向電極,上述一側對向電極與上述另一側對向電極之前端部間構成為在ESD施加時產生放電之放電間隙部;放電輔助電極,其係分別連接構成上述對向電極之上述一側對向電極與上述另一側對向電極,且自上述一側對向電極跨及上述另一側對向電極而配設;及保護絕緣層,其係配設於上述放電輔助電極與上述磁性基材之間,防止因放電使上述磁性基材之絕緣性劣化。 An electrostatic discharge protection device comprising: a magnetic substrate containing a glass component; and a counter electrode attached to a surface or inside of the magnetic substrate, including One side opposite electrode and the other opposite electrode are formed so that the front end portions are spaced apart from each other, and the front end electrode and the other side opposite electrode front end portion are configured to be applied during ESD a discharge gap portion that generates a discharge; and a discharge auxiliary electrode that connects the one side opposite electrode and the other side opposite electrode that constitute the opposite electrode, and the opposite electrode from the one side and the other side The counter electrode is disposed; and the protective insulating layer is disposed between the discharge auxiliary electrode and the magnetic substrate to prevent deterioration of insulation of the magnetic substrate by discharge. 如請求項6之靜電放電保護裝置,其中上述保護絕緣層係超出形成有上述放電輔助電極之區域而配設至其周邊之區域。 The electrostatic discharge protection device of claim 6, wherein the protective insulating layer is disposed in a region beyond a region where the discharge auxiliary electrode is formed and disposed to a periphery thereof. 如請求項1、2、6及7中任一項之靜電放電保護裝置,其中上述保護絕緣層含有結晶性無機氧化物。The electrostatic discharge protection device according to any one of claims 1 to 2, wherein the protective insulating layer contains a crystalline inorganic oxide.
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TW200746182A (en) * 2006-03-10 2007-12-16 Joinset Co Ltd Ceramic component element, ceramic component and method for the same
JP2010109313A (en) * 2008-09-30 2010-05-13 Tdk Corp Composite electronic component
WO2010061550A1 (en) * 2008-11-26 2010-06-03 株式会社 村田製作所 Esd protection device and manufacturing method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200746182A (en) * 2006-03-10 2007-12-16 Joinset Co Ltd Ceramic component element, ceramic component and method for the same
JP2010109313A (en) * 2008-09-30 2010-05-13 Tdk Corp Composite electronic component
WO2010061550A1 (en) * 2008-11-26 2010-06-03 株式会社 村田製作所 Esd protection device and manufacturing method thereof

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