TWI506427B - 仿真電氣可抹除（ｅｅｅ）記憶體及操作方法 - Google Patents

仿真電氣可抹除（ｅｅｅ）記憶體及操作方法 Download PDF

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Publication number
TWI506427B
TWI506427B TW100113045A TW100113045A TWI506427B TW I506427 B TWI506427 B TW I506427B TW 100113045 A TW100113045 A TW 100113045A TW 100113045 A TW100113045 A TW 100113045A TW I506427 B TWI506427 B TW I506427B
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TW
Taiwan
Prior art keywords
memory
segments
emulation
remaining
addresses
Prior art date
Application number
TW100113045A
Other languages
English (en)
Chinese (zh)
Other versions
TW201202931A (en
Inventor
Ross S Scouller
Frank K Baker
Venkatagiri Chandrasekaran
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW201202931A publication Critical patent/TW201202931A/zh
Application granted granted Critical
Publication of TWI506427B publication Critical patent/TWI506427B/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0804—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/40—Specific encoding of data in memory or cache
    • G06F2212/401—Compressed data
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
TW100113045A 2010-04-29 2011-04-14 仿真電氣可抹除（ｅｅｅ）記憶體及操作方法 TWI506427B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/769,795 US8341372B2 (en) 2010-04-29 2010-04-29 Emulated electrically erasable (EEE) memory and method of operation

Publications (2)

Publication Number Publication Date
TW201202931A TW201202931A (en) 2012-01-16
TWI506427B true TWI506427B (zh) 2015-11-01

Family

ID=44859217

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100113045A TWI506427B (zh) 2010-04-29 2011-04-14 仿真電氣可抹除（ｅｅｅ）記憶體及操作方法

Country Status (5)

Country Link
US (1) US8341372B2 (enExample)
JP (1) JP5787451B2 (enExample)
CN (1) CN102870099B (enExample)
TW (1) TWI506427B (enExample)
WO (1) WO2011139452A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9110782B2 (en) 2012-04-27 2015-08-18 Freescale Semiconductor, Inc. Emulated electrically erasable memory parallel record management
US9424176B2 (en) 2013-02-25 2016-08-23 Freescale Semiconductor, Inc. Robust sector ID scheme for tracking dead sectors to automate search and copydown
US9563491B2 (en) * 2014-09-12 2017-02-07 Nxp Usa, Inc. High voltage failure recovery for emulated electrically erasable (EEE) memory system
US10546081B2 (en) * 2017-09-20 2020-01-28 Mentor Graphics Corporation Full memory logical erase for circuit verification
US10528273B2 (en) 2017-11-07 2020-01-07 Nxp Usa, Inc. Dynamic compression in an electrically erasable programmble read only memory (EEPROM) emulation system
CN112968979B (zh) * 2020-12-10 2023-05-12 江苏奥雷光电有限公司 一种多从机系统中有效预防从机地址异常的方法
CN118471299A (zh) * 2024-04-17 2024-08-09 杭州朔天科技有限公司 模拟电可擦除存储器数据处理方法、存储器及微处理芯片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030093711A1 (en) * 1989-04-13 2003-05-15 Eliyahou Harari Flash EEprom system
US20050055496A1 (en) * 2003-09-09 2005-03-10 Ballard Power Systems Corporation EEPROM emulation in flash memory
US20070143528A1 (en) * 2003-12-08 2007-06-21 Piotr Przybylek A software method of emulation of eeprom memory
TW200903500A (en) * 2007-06-14 2009-01-16 Samsung Electronics Co Ltd A method of wearing-leveling memory device and memory system
TW201015331A (en) * 2008-07-01 2010-04-16 Ibm Dynamic segment sparing and repair in a memory system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69832609D1 (de) 1998-09-30 2006-01-05 St Microelectronics Srl Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren
US6952310B1 (en) 1999-05-12 2005-10-04 Nitto Denko Corporation Light pipe and polarized-light source
EP1237085B1 (en) 2001-02-26 2004-12-01 Yu-Te Wu Memory management method for configuring a computer data storage medium to include a virtual disk drive
CN100349127C (zh) * 2004-12-03 2007-11-14 华为技术有限公司 嵌入式系统数据备份装置及方法
KR101089150B1 (ko) * 2005-08-03 2011-12-02 쌘디스크 코포레이션 스케쥴링된 리클레임 작동들을 갖는 비휘발성 메모리
US20070150645A1 (en) * 2005-12-28 2007-06-28 Intel Corporation Method, system and apparatus for power loss recovery to enable fast erase time
JP5376551B2 (ja) * 2006-05-30 2013-12-25 京セラ株式会社 フラッシュメモリシステム、電子機器、および携帯端末装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030093711A1 (en) * 1989-04-13 2003-05-15 Eliyahou Harari Flash EEprom system
US20050055496A1 (en) * 2003-09-09 2005-03-10 Ballard Power Systems Corporation EEPROM emulation in flash memory
US20070143528A1 (en) * 2003-12-08 2007-06-21 Piotr Przybylek A software method of emulation of eeprom memory
TW200903500A (en) * 2007-06-14 2009-01-16 Samsung Electronics Co Ltd A method of wearing-leveling memory device and memory system
TW201015331A (en) * 2008-07-01 2010-04-16 Ibm Dynamic segment sparing and repair in a memory system

Also Published As

Publication number Publication date
TW201202931A (en) 2012-01-16
WO2011139452A2 (en) 2011-11-10
WO2011139452A3 (en) 2012-01-19
US8341372B2 (en) 2012-12-25
CN102870099A (zh) 2013-01-09
JP2013525917A (ja) 2013-06-20
JP5787451B2 (ja) 2015-09-30
US20110271035A1 (en) 2011-11-03
CN102870099B (zh) 2015-08-19

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