JP5787451B2 - エミュレート電気的消去可能（ｅｅｅ）メモリおよび動作方法 - Google Patents

エミュレート電気的消去可能（ｅｅｅ）メモリおよび動作方法 Download PDF

Info

Publication number
JP5787451B2
JP5787451B2 JP2013507977A JP2013507977A JP5787451B2 JP 5787451 B2 JP5787451 B2 JP 5787451B2 JP 2013507977 A JP2013507977 A JP 2013507977A JP 2013507977 A JP2013507977 A JP 2013507977A JP 5787451 B2 JP5787451 B2 JP 5787451B2
Authority
JP
Japan
Prior art keywords
memory
sectors
emulation memory
space
predetermined number
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013507977A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013525917A (ja
JP2013525917A5 (enExample
Inventor
エス． スクーラー、ロス
エス． スクーラー、ロス
フランク ケイ． ベイカー、ジュニア
フランク ケイ． ベイカー、ジュニア
チャンドラセカラン、ベンカタギリ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2013525917A publication Critical patent/JP2013525917A/ja
Publication of JP2013525917A5 publication Critical patent/JP2013525917A5/ja
Application granted granted Critical
Publication of JP5787451B2 publication Critical patent/JP5787451B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0804—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/40—Specific encoding of data in memory or cache
    • G06F2212/401—Compressed data
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
JP2013507977A 2010-04-29 2011-04-04 エミュレート電気的消去可能（ｅｅｅ）メモリおよび動作方法 Expired - Fee Related JP5787451B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/769,795 2010-04-29
US12/769,795 US8341372B2 (en) 2010-04-29 2010-04-29 Emulated electrically erasable (EEE) memory and method of operation
PCT/US2011/031084 WO2011139452A2 (en) 2010-04-29 2011-04-04 Emulated electrically erasable (eee) memory and method of operation

Publications (3)

Publication Number Publication Date
JP2013525917A JP2013525917A (ja) 2013-06-20
JP2013525917A5 JP2013525917A5 (enExample) 2014-05-22
JP5787451B2 true JP5787451B2 (ja) 2015-09-30

Family

ID=44859217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013507977A Expired - Fee Related JP5787451B2 (ja) 2010-04-29 2011-04-04 エミュレート電気的消去可能（ｅｅｅ）メモリおよび動作方法

Country Status (5)

Country Link
US (1) US8341372B2 (enExample)
JP (1) JP5787451B2 (enExample)
CN (1) CN102870099B (enExample)
TW (1) TWI506427B (enExample)
WO (1) WO2011139452A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9110782B2 (en) 2012-04-27 2015-08-18 Freescale Semiconductor, Inc. Emulated electrically erasable memory parallel record management
US9424176B2 (en) 2013-02-25 2016-08-23 Freescale Semiconductor, Inc. Robust sector ID scheme for tracking dead sectors to automate search and copydown
US9563491B2 (en) * 2014-09-12 2017-02-07 Nxp Usa, Inc. High voltage failure recovery for emulated electrically erasable (EEE) memory system
US10546081B2 (en) * 2017-09-20 2020-01-28 Mentor Graphics Corporation Full memory logical erase for circuit verification
US10528273B2 (en) 2017-11-07 2020-01-07 Nxp Usa, Inc. Dynamic compression in an electrically erasable programmble read only memory (EEPROM) emulation system
CN112968979B (zh) * 2020-12-10 2023-05-12 江苏奥雷光电有限公司 一种多从机系统中有效预防从机地址异常的方法
CN118471299A (zh) * 2024-04-17 2024-08-09 杭州朔天科技有限公司 模拟电可擦除存储器数据处理方法、存储器及微处理芯片

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69034227T2 (de) 1989-04-13 2007-05-03 Sandisk Corp., Sunnyvale EEprom-System mit Blocklöschung
EP0991081B1 (en) 1998-09-30 2005-11-30 STMicroelectronics S.r.l. Emulated EEPROM memory device and corresponding method
US6952310B1 (en) 1999-05-12 2005-10-04 Nitto Denko Corporation Light pipe and polarized-light source
ATE284060T1 (de) 2001-02-26 2004-12-15 Yu-Te Wu Speicherverwaltungsverfahren zur konfiguration eines computer-speichermediums mit einer virtuellen platteneinheit
US7058755B2 (en) 2003-09-09 2006-06-06 Ballard Power Systems Corporation EEPROM emulation in flash memory
PL363945A1 (en) 2003-12-08 2005-06-13 Advanced Digital Broadcast Polska Spółka z o.o. Software method for eeprom memory emulation
CN100349127C (zh) * 2004-12-03 2007-11-14 华为技术有限公司 嵌入式系统数据备份装置及方法
WO2007019198A2 (en) * 2005-08-03 2007-02-15 Sandisk Corporation Non-volatile memory with scheduled reclaim operations
US20070150645A1 (en) * 2005-12-28 2007-06-28 Intel Corporation Method, system and apparatus for power loss recovery to enable fast erase time
JP5376551B2 (ja) * 2006-05-30 2013-12-25 京セラ株式会社 フラッシュメモリシステム、電子機器、および携帯端末装置
KR100857761B1 (ko) * 2007-06-14 2008-09-10 삼성전자주식회사 웨어 레벨링을 수행하는 메모리 시스템 및 그것의 쓰기방법
US7895374B2 (en) * 2008-07-01 2011-02-22 International Business Machines Corporation Dynamic segment sparing and repair in a memory system

Also Published As

Publication number Publication date
US8341372B2 (en) 2012-12-25
JP2013525917A (ja) 2013-06-20
CN102870099B (zh) 2015-08-19
WO2011139452A3 (en) 2012-01-19
TW201202931A (en) 2012-01-16
TWI506427B (zh) 2015-11-01
CN102870099A (zh) 2013-01-09
US20110271035A1 (en) 2011-11-03
WO2011139452A2 (en) 2011-11-10

Similar Documents

Publication Publication Date Title
JP5787451B2 (ja) エミュレート電気的消去可能（ｅｅｅ）メモリおよび動作方法
US8463826B2 (en) Incremental garbage collection for non-volatile memories
US20200194075A1 (en) Memory system and control method
US10824564B2 (en) Operation method of memory controller and operation method of storage device including the same
US8171239B2 (en) Storage management method and system using the same
CN112823331B (zh) 用于具有较细粒度的并行多租户ssd中的数据恢复的系统和方法
US20140129758A1 (en) Wear leveling in flash memory devices with trim commands
US9933975B1 (en) Data transmission method, memory storage device and memory control circuit unit
US20170039141A1 (en) Mapping table updating method, memory storage device and memory control circuit unit
US8417879B2 (en) Method for suppressing errors, and associated memory device and controller thereof
CN105339910B (zh) 在混合驱动器中的虚拟nand容量扩展
JP2018160195A (ja) メモリシステムおよび不揮発性メモリの制御方法
US9177656B2 (en) Data writing method, memory storage device and memory controlling circuit unit
CN115203086A (zh) 主机存储器缓冲器分配管理
US8250319B2 (en) Operating an emulated electrically erasable (EEE) memory
US20130268717A1 (en) Emulated electrically erasable memory having sector management
US20240295984A1 (en) Memory with efficient storage of event log data
CN112162695A (zh) 一种数据缓存方法、装置、电子设备及存储介质
US8473710B2 (en) Multiple partitioned emulated electrically erasable (EEE) memory and method of operation
US10346040B2 (en) Data merging management method based on data type, memory storage device and memory control circuit unit
CN110390985B (zh) 存储器管理方法、存储器存储装置及存储器控制电路单元
US9613705B1 (en) Method for managing programming mode of rewritable non-volatile memory module, and memory storage device and memory control circuit unit using the same
US10564886B2 (en) Methods and apparatus for controlling flash translation layer recycle from host
WO2025218561A1 (zh) 模拟电可擦除存储器数据处理方法、存储器及微处理芯片
KR20250127161A (ko) 솔리드 스테이트 드라이브들에서 백그라운드 마모 레벨링을 제어하기 위한 시스템들, 방법들 및 매체들

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140402

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140402

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150106

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150406

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150501

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150515

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150701

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150727

R150 Certificate of patent or registration of utility model

Ref document number: 5787451

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees