CN102870099B - 模拟电可擦(eee)存储器及其操作方法 - Google Patents

模拟电可擦(eee)存储器及其操作方法 Download PDF

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Publication number
CN102870099B
CN102870099B CN201180021441.4A CN201180021441A CN102870099B CN 102870099 B CN102870099 B CN 102870099B CN 201180021441 A CN201180021441 A CN 201180021441A CN 102870099 B CN102870099 B CN 102870099B
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China
Prior art keywords
memory
sectors
predetermined value
sector
addresses
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Expired - Fee Related
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CN201180021441.4A
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English (en)
Chinese (zh)
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CN102870099A (zh
Inventor
R·S·斯古勒
F·K·小贝克
V·常德瑞塞卡兰
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN102870099A publication Critical patent/CN102870099A/zh
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Expired - Fee Related legal-status Critical Current
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    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/08Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0804Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/40Specific encoding of data in memory or cache
    • G06F2212/401Compressed data
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7203Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
CN201180021441.4A 2010-04-29 2011-04-04 模拟电可擦(eee)存储器及其操作方法 Expired - Fee Related CN102870099B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/769,795 2010-04-29
US12/769,795 US8341372B2 (en) 2010-04-29 2010-04-29 Emulated electrically erasable (EEE) memory and method of operation
PCT/US2011/031084 WO2011139452A2 (en) 2010-04-29 2011-04-04 Emulated electrically erasable (eee) memory and method of operation

Publications (2)

Publication Number Publication Date
CN102870099A CN102870099A (zh) 2013-01-09
CN102870099B true CN102870099B (zh) 2015-08-19

Family

ID=44859217

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180021441.4A Expired - Fee Related CN102870099B (zh) 2010-04-29 2011-04-04 模拟电可擦(eee)存储器及其操作方法

Country Status (5)

Country Link
US (1) US8341372B2 (enExample)
JP (1) JP5787451B2 (enExample)
CN (1) CN102870099B (enExample)
TW (1) TWI506427B (enExample)
WO (1) WO2011139452A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9110782B2 (en) 2012-04-27 2015-08-18 Freescale Semiconductor, Inc. Emulated electrically erasable memory parallel record management
US9424176B2 (en) 2013-02-25 2016-08-23 Freescale Semiconductor, Inc. Robust sector ID scheme for tracking dead sectors to automate search and copydown
US9563491B2 (en) * 2014-09-12 2017-02-07 Nxp Usa, Inc. High voltage failure recovery for emulated electrically erasable (EEE) memory system
US10546081B2 (en) * 2017-09-20 2020-01-28 Mentor Graphics Corporation Full memory logical erase for circuit verification
US10528273B2 (en) 2017-11-07 2020-01-07 Nxp Usa, Inc. Dynamic compression in an electrically erasable programmble read only memory (EEPROM) emulation system
CN112968979B (zh) * 2020-12-10 2023-05-12 江苏奥雷光电有限公司 一种多从机系统中有效预防从机地址异常的方法
CN118471299A (zh) * 2024-04-17 2024-08-09 杭州朔天科技有限公司 模拟电可擦除存储器数据处理方法、存储器及微处理芯片

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1237085A1 (en) * 2001-02-26 2002-09-04 Yu-Te Wu Memory management method for configuring a computer data storage medium to include a virtual disk drive
US20030093711A1 (en) * 1989-04-13 2003-05-15 Eliyahou Harari Flash EEprom system
US20050055496A1 (en) * 2003-09-09 2005-03-10 Ballard Power Systems Corporation EEPROM emulation in flash memory
CN1783025A (zh) * 2004-12-03 2006-06-07 华为技术有限公司 嵌入式系统数据备份装置及方法
US20070143528A1 (en) * 2003-12-08 2007-06-21 Piotr Przybylek A software method of emulation of eeprom memory
US20070150645A1 (en) * 2005-12-28 2007-06-28 Intel Corporation Method, system and apparatus for power loss recovery to enable fast erase time

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0991081B1 (en) 1998-09-30 2005-11-30 STMicroelectronics S.r.l. Emulated EEPROM memory device and corresponding method
US6952310B1 (en) 1999-05-12 2005-10-04 Nitto Denko Corporation Light pipe and polarized-light source
WO2007019198A2 (en) * 2005-08-03 2007-02-15 Sandisk Corporation Non-volatile memory with scheduled reclaim operations
JP5376551B2 (ja) * 2006-05-30 2013-12-25 京セラ株式会社 フラッシュメモリシステム、電子機器、および携帯端末装置
KR100857761B1 (ko) * 2007-06-14 2008-09-10 삼성전자주식회사 웨어 레벨링을 수행하는 메모리 시스템 및 그것의 쓰기방법
US7895374B2 (en) * 2008-07-01 2011-02-22 International Business Machines Corporation Dynamic segment sparing and repair in a memory system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030093711A1 (en) * 1989-04-13 2003-05-15 Eliyahou Harari Flash EEprom system
EP1237085A1 (en) * 2001-02-26 2002-09-04 Yu-Te Wu Memory management method for configuring a computer data storage medium to include a virtual disk drive
US20050055496A1 (en) * 2003-09-09 2005-03-10 Ballard Power Systems Corporation EEPROM emulation in flash memory
US20070143528A1 (en) * 2003-12-08 2007-06-21 Piotr Przybylek A software method of emulation of eeprom memory
CN1783025A (zh) * 2004-12-03 2006-06-07 华为技术有限公司 嵌入式系统数据备份装置及方法
US20070150645A1 (en) * 2005-12-28 2007-06-28 Intel Corporation Method, system and apparatus for power loss recovery to enable fast erase time

Also Published As

Publication number Publication date
US8341372B2 (en) 2012-12-25
JP2013525917A (ja) 2013-06-20
JP5787451B2 (ja) 2015-09-30
WO2011139452A3 (en) 2012-01-19
TW201202931A (en) 2012-01-16
TWI506427B (zh) 2015-11-01
CN102870099A (zh) 2013-01-09
US20110271035A1 (en) 2011-11-03
WO2011139452A2 (en) 2011-11-10

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP USA, Inc.

Address before: Texas in the United States

Patentee before: FREESCALE SEMICONDUCTOR, Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150819