TWI505356B - Baffle and apparatus for treating substrate with the same - Google Patents

Description

Spacer and substrate processing apparatus using the same

The present invention relates to a substrate processing apparatus and, more particularly, to an apparatus and method for processing a substrate by using plasma.

The fabrication of semiconductor devices requires various processes such as deposition processes, photolithography processes, etching processes, ashing processes, cleaning processes, polishing processes, and the like. A number of processes including deposition processes, etching processes, and ashing processes are used to process semiconductor substrates such as wafers by using plasma.

An example of an apparatus for performing a substrate processing process by using plasma is disclosed in Korean Patent Publication No. 10-2011-0061334. The device includes a spacer between the plasma generation chamber and the process space, and the spacer is electrically grounded. In general, the plasma contains free radicals, ions, electrons, and the like. The spacer absorbs some ions and electrons and allows free radicals to pass through the area provided with the substrate, thereby removing the photoresist, the native oxide layer or the oxide layer formed by chemical reaction on the surface of the wafer.

In general, since the spacer is coupled to the chamber by screws, a coupling hole is disposed in the spacer. The spacer is made by using a single material such as aluminum (Al) having high mechanical strength or aluminum (anodized aluminum) coated with an oxide layer to avoid processing the coupling hole in the spacer. Time The septum ruptured. However, if Al or an aluminum material coated with an oxide layer is used, since the radical pass rate is low, the removal rate of the photoresist or the oxide layer is low.

The present invention provides a new structural spacer and a substrate processing apparatus using the same.

The present invention also provides a separator having an improved radical pass rate having coupling holes to be coupled to an external structure and easy to be simultaneously processed in the separator, and providing a substrate processing apparatus using the apparatus .

The present invention also provides a free radical separator having an increased throughput, and the spacer includes an easily fabricated coupling hole for coupling to an external structure, and provides a substrate processing apparatus using the spacer.

The features of the present invention are not limited to the foregoing, and other features not described herein will be apparent to those skilled in the art from the following description.

Embodiments of the present invention provide a substrate processing apparatus including: a processing chamber including a reaction chamber and a plasma generating chamber provided above the reaction chamber; a support unit disposed inside the reaction chamber and supported for supporting a substrate; a gas supply unit for supplying gas to the plasma generation chamber; a plasma source for generating plasma from the gas supplied to the plasma generation chamber; and a separator disposed in the reaction chamber and the plasma Forming between chambers and having a plurality of injection holes for supplying plasma generated in the plasma generation chamber into the reaction chamber, wherein the spacer comprises: an injection plate having a plurality of injection holes; and arranging a fixing plate at the periphery of the injection plate, and the fixing plate is coupled to the injection plate and fixed to the processing chamber, wherein the injection plate is made of the first material, and the fixing plate is made of a second material different from the first material. to make.

In some embodiments, the fixed plate can include a toroidal shape. In other embodiments, the fixing plate may include: a coupling hole; and a spacer fixed to the process chamber by a coupling inserted through the coupling hole.

In still other embodiments, the fixed plate may include: a top plate having an annular shape; and a lower plate disposed to face the upper plate and below the upper plate, wherein the injection plate is provided between the upper plate and the lower plate. In still other embodiments, the upper plate may include an upper plate side portion that surrounds the periphery of the injection plate; and an upper plate protrusion that protrudes inwardly at an upper portion of the upper plate side portion, wherein the lower plate may include a lower plate side a portion surrounding the periphery of the injection plate; and a lower plate protrusion projecting inwardly at a lower portion of the side portion of the lower plate, wherein an edge region of the injection plate is insertable into the upper plate projection, the upper plate side portion, and the lower plate The space defined by the side portions and the lower plate projections. In other embodiments, the coupling aperture may be provided by an upper aperture defined in the side portion of the upper panel and a lower aperture defined in the lower panel side portion and extending from the upper aperture.

In still other embodiments, the inner surface of the retaining plate can have a recess in which the edge region of the spacer can be inserted into the recess.

In other embodiments, the retaining plate can be coupled to the injection plate by an adhesive.

In still other embodiments, the spacer may be made of a conductive material and in contact with the process chamber, and the process chamber is grounded.

In other embodiments, the first material may have a higher radical pass rate than the second material, and the second material may have a stronger brittleness than the first material. In still other embodiments, the first material can be made of a material that contains SiO ₂ . In other embodiments, the second material may be made of a material containing Al or anodized Al.

In other embodiments of the present invention, a substrate processing apparatus includes: a process chamber; a support unit provided in the process chamber and supporting the substrate; and a spacer disposed on the upper portion of the support unit, the spacer having a power supply slurry An injection hole, wherein the spacer comprises an injection plate having an injection hole; a fixing plate surrounding the injection plate and fixed to the process chamber, and wherein the injection plate has a radical passage rate higher than that of the fixed plate. In some embodiments, the fixation plate can be formed to be more brittle than the injection plate.

In still other embodiments of the present invention, a spacer includes: an injection plate having a hole vertically extending through the injection plate; and a fixing plate coupled to the injection plate and surrounding the injection plate and having a coupling structure with the external structure The coupling hole has a different material from the fixing plate and the fixing plate. In some embodiments, the injection plate can have a free radical pass rate that is higher than the fixed plate. In other embodiments, the fixation plate can have a stronger brittleness than the injection plate.

1‧‧‧Substrate processing equipment

100‧‧‧Processing chamber

120‧‧‧Processing chamber

121‧‧‧ Space

122‧‧‧ venting holes

123‧‧‧ Grounding wire

126‧‧‧Exhaust line

128‧‧‧ pump

129‧‧‧Wall heater

140‧‧‧ Plasma generation room

142‧‧‧ mouth

144‧‧‧Exhaust chamber

146‧‧‧Diffusion chamber

149‧‧‧ Space

200‧‧‧Support unit

220‧‧‧Support substrate

222‧‧‧heating parts

224‧‧‧ Cooling parts

240‧‧‧Support shaft

300‧‧‧ gas supply unit

320‧‧‧First gas supply unit

322‧‧‧First gas supply line

324‧‧‧First gas storage section

340‧‧‧Second gas supply

342‧‧‧Second gas supply line

344‧‧‧Second gas storage

400‧‧‧ Plasma source

420‧‧‧Antenna

440‧‧‧Power supply

500‧‧‧ spacer

500a‧‧‧ spacer

500b‧‧‧ spacer

520‧‧‧Injection plate

520a‧‧‧injection board

520b‧‧‧injection plate

522‧‧‧ injection hole

540‧‧‧fixed board

540a‧‧‧fixed board

540b‧‧‧fixed board

550b‧‧‧Binder

542‧‧‧ coupling hole

542a‧‧‧ coupling hole

544‧‧‧ Groove

544a‧‧‧ Groove

560‧‧‧ upper board

560a‧‧‧First board

562‧‧‧ upper board

564‧‧‧Side part of the upper plate

566‧‧‧Upper plate projection

580‧‧‧lower board

580a‧‧‧Second plate

582‧‧‧ lower hole

584‧‧‧Side part of the lower part

586‧‧‧lower plate projection

590‧‧‧ coupling

W‧‧‧Substrate

The drawings are provided to provide a further understanding of the invention, and are incorporated in and constitute The drawings illustrate exemplary embodiments of the invention and, together, In the drawings: FIG. 1 is a view of a substrate processing apparatus in accordance with an embodiment of the present invention.

Figure 2 is a perspective view of the spacer when coupled.

Figure 3 is a view of the separator of Figure 1 separated.

Figure 4 is a cross-sectional view of the spacer of Figure 1.

Figure 5 is a cross-sectional view showing a state in which the spacer is mounted to the process chamber.

Figure 6 is an exploded perspective view showing another embodiment of the spacer of Figure 2.

Figure 7 is a cross-sectional view of the spacer of Figure 6.

Figure 8 is a partial perspective view of another embodiment of the spacer of Figure 1.

The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The description of the present invention is not intended to be limited to the details of the invention.

In accordance with an embodiment of the invention, the substrate can be a semiconductor wafer. However, the invention is not limited to semiconductor wafers. For example, the substrate can be various types of substrates such as a glass substrate or the like.

Further, as an example, a substrate processing apparatus according to an embodiment of the present invention will be described with respect to an apparatus for etching a substrate by using plasma. However, the invention is not limited to this. The substrate processing apparatus may be a device that performs various types of processes (such as ashing processes) for processing substrates by using plasma.

1 is a view of a substrate processing apparatus 1 in accordance with an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 1 etches a thin film on the substrate W by using plasma. The film can be one of a plurality of film layers, such as a polycrystalline germanium layer, a hafnium oxide layer, a tantalum nitride layer, and the like. Further, the film may be a natural oxide layer or an oxide layer formed by a chemical reaction.

The substrate processing apparatus 1 includes a process chamber 100, a support unit 200, a gas supply unit 300, a plasma source 400, and a separator 500.

The process chamber 100 includes a processing chamber 120 and a plasma generation chamber 140. The processing chamber 120 provides a space 121 for processing the substrate W by using plasma. The plasma generation chamber 140 provides a plasma generated by the self-made process gas The space is 149.

The processing chamber 120 includes a space 121 that is open at the top. Processing chamber 120 can have a substantially cylindrical shape. An opening (not shown) is defined in the sidewall of the processing chamber 120. The substrate W is loaded or carried away from the inside of the processing chamber 120 by the opening. The opening may be opened or closed by an opening/closing member such as a door (not shown). A venting opening 122 is disposed at the bottom of the processing chamber 120. The exhaust line 126 is connected to the exhaust port 122. Pump 128 is mounted on exhaust line 126. Pump 128 adjusts the pressure in processing chamber 120 to process pressure. The residual gas and reaction byproducts in the processing chamber 120 are discharged to the outside of the processing chamber 120 by the exhaust line 126. Wall heater 129 can be disposed external to processing chamber 120. The wall heater 129 may have a coil shape. A wall heater 129 is selectively provided inside the outer wall of the process chamber 100.

The plasma generation chamber 140 is disposed outside of the processing chamber 120. According to an embodiment, the plasma generation chamber 140 is disposed above the processing chamber 120 and is coupled to the processing chamber 120. The plasma generation chamber 140 includes a gas port 142, an exhaust chamber 144, and a diffusion chamber 146. The port 142, the exhaust chamber 144, and the diffusion chamber 146 are sequentially provided in order from top to bottom. The port 142 receives gas from the outside. The exhaust chamber 144 has a hollow cylindrical shape. Viewed from the top, the space 149 provided in the exhaust chamber 144 is smaller than the space 121 provided in the processing chamber 120. The plasma is generated from the gas in the exhaust chamber 144. The diffusion chamber 146 supplies the plasma generated in the exhaust chamber 144 to the processing chamber 120. The space in the diffusion chamber 146 has a portion that gradually widens downward. The lower end of the diffusion chamber 146 is coupled to the upper end of the processing chamber 120 and provides a seal (not shown) for use in both The outside of the room is sealed.

The process chamber 100 is made of a conductive material. The process chamber 100 is grounded by a ground line 123.

The support unit 200 supports the substrate W. The support unit 200 includes a support substrate 220 and a support shaft 240. The support substrate 220 is disposed within the space 121 and has a disk shape. The support substrate 220 is supported by the support shaft 240. The substrate W is placed on the top surface of the support substrate 220. An electrode (not shown) is provided in the support substrate 220, and the substrate W is supported by the support substrate 220 by an electrostatic force. A heating element 222 can be provided within the support substrate 220. According to an embodiment, the heating element 222 is provided as a heating wire. Further, the cooling member 224 may be provided as a cooling line for the cooling water to flow. The heating member 222 heats the substrate W at a predetermined temperature, and the cooling member 224 forcibly cools the substrate W.

The gas supply unit 300 includes a first gas supply 320 and a second gas supply 340.

The first gas supply 320 includes a first gas supply line 322 and a first gas storage portion 324. The first gas supply line 322 is connected to the gas port 142. The first gas supplied through the port 142 is introduced into the exhaust chamber 144 and excited into plasma in the exhaust chamber 144. The first gas may include difluoromethane (CH ₂ F ₂ ), N ₂ and O ₂ . Alternatively, the first gas may further include various types of gases such as carbon tetrafluoride (CF ₄ ) and the like.

The second gas supply member 340 includes a second gas supply line 342 and a second gas storage portion 344. The second gas system is supplied to the passage of the plasma supplied from the first gas into the processing chamber 120. According to an embodiment, the second gas supply line 342 is connected to the exhaust chamber 144 at a region lower than the antenna 420 to be described later. The second gas may include nitrogen trifluoride (NF ₃ ).

Due to the above structure, the first gas system is directly excited into plasma by electric power, and the second gas system is excited into plasma by reacting with the first gas.

The types of the first gas and the second gas described in the above embodiments may vary.

Further, only the first gas supply member 320 may be provided and the second gas supply member 340 may not be provided.

The plasma source 400 generates plasma from the first gas in the exhaust chamber 144. According to an embodiment, the plasma source 400 can be an inductively coupled plasma source 400. The plasma source 400 has an antenna 420 and a power source 440. Antenna 420 is provided external to exhaust chamber 144 and surrounds exhaust chamber 144 for several weeks. One end of the antenna 420 is connected to the power source 440, and the other end is grounded. A power source 440 is supplied to the antenna 420. According to an embodiment, the power source 440 can supply the antenna 420 with high frequency power.

The spacer 500 is disposed between the processing chamber 120 and the plasma generation chamber 140. When the plasma is supplied onto the substrate W, the spacer 500 maintains the plasma density and flow rate in the entire region within the processing chamber 120. The spacer 500 is grounded. According to an embodiment, since the spacer 500 is provided for contacting the process chamber 100, the spacer 500 can be grounded by the process chamber 100. Alternatively, the spacer 500 can be directly connected to an additional ground line. Thus, free radicals are supplied to the processing chamber 120 by the spacers 500, which prevents ions and electrons from being introduced into the processing chamber 120.

The spacer 500 is fixed to the process chamber 100. According to an embodiment, the spacer 500 can be coupled to the lower end of the plasma generation chamber 140. Figure 2 to Figure 4 are based on this A view of a septum 500 of an embodiment of the invention. 2 is a perspective view of the spacer 500 when coupled. Figure 3 is a perspective view of the spacer 500 when it is separated. 4 is a cross-sectional view of the spacer 500.

Referring to FIGS. 2 through 4, the spacer 500 has an injection plate 520 and a fixing plate 540.

The injection plate 520 has a disk shape. The injection plate 520 can have a diameter substantially similar to the substrate W. An injection hole 522 extending from the upper end to the lower end of the injection plate 520 is defined in the injection plate 520. Injection holes 522 having substantially the same density and diameter are defined in corresponding regions of the injection plate 520. Alternatively, the injection apertures 522 can have different densities depending on the area defined by the injection plate 520. Further, depending on the area defined in the injection plate 520, the injection holes 522 can have different diameters. The plasma in the plasma generation chamber 140 is supplied to the processing chamber 120 through the injection port 522.

The fixing plate 540 is coupled to the injection plate 520. The fixing plate 540 has an annular shape and surrounds the injection plate 520. The coupling hole 542 is defined in the fixing plate 540. A plurality of coupling holes 542 are provided at a fixed interval along the length of the fixing plate 540. Each of the coupling holes 542 may be provided as a through hole that passes through in the vertical direction. The inner surface of the coupling hole 542 may have a thread. The spacer 500 is fixed to the process chamber 100 by a coupling 590 inserted through the coupling hole 542. A screw can be used as the coupling 590.

According to the experiment, when the free radical passage rate is measured for the separator made of each single material (that is, quartz, Al ₂ O ₃ , Al, and anodized Al), it is oxidized by quartz, Al, and anodizing. The order of aluminum (anodized Al) and Al ₂ O ₃ provides a better pass rate. However, when the coupling hole is processed in a separator made of a quartz material having an excellent radical passage rate, the quartz is susceptible to brittleness and thus is easily broken. According to the experiment, when the brittleness is measured for the separator made of each single material (ie, quartz, Al ₂ O ₃ , Al, and anodized Al), the brittle strength is the strongest, followed by Al ₂ O _{3 ,} anodized aluminum, and Al.

According to an embodiment of the present invention, since the injection plate 520 has the injection hole 522, the radicals can preferably pass through the injection plate 520. Further, since the coupling hole 542 is defined in the fixing plate 540, the manufacturing process thereof is simple. Further, since the fixing plate 540 surrounds the injection plate 520 to define the outside of the spacer 500, its handling is simple. Therefore, the injection plate 520 is made of a first material having a relatively high radical passage rate with respect to the material of the fixed plate 540. Further, the fixing plate 540 is made of a second material having a relatively strong brittleness with respect to the material of the injection plate 520. For example, the first material is quartz or a material comprising quartz. The second material may be Al, anodized Al or a material comprising at least one of the foregoing materials. However, the materials of the fixing plate 540 and the injection plate 520 are not limited to the above embodiments, and thus various options are available after taking into consideration the radical passing rate and brittleness.

Referring to FIGS. 2 to 4, the fixing plate 540 has an upper plate 560 and a lower plate 580. Each of the upper plates 560 and each of the lower plates 580 has an annular shape. The upper plate 560 has an upper plate side portion 564 and an upper plate protrusion 566. The upper plate side portion 564 has a circular ring shape and its inner diameter is substantially the same as the inner diameter of the injection plate 520. The upper plate protrusion 566 has an annular shape and protrudes inward in an upper region of the upper plate side portion 564. The lower plate 580 has a lower plate side portion 584 and a lower plate protrusion 586. Lower side of the board Portion 584 has substantially the same shape and dimensions as upper plate side portion 564. The lower plate protrusion 586 projects inwardly in the lower region of the lower plate side portion 584. The lower plate protrusion 586 has substantially the same shape and size as the upper plate protrusion 566. The groove 544 having a ring shape is defined on the inner side surface of the fixing plate 540 by the upper plate side portion 564, the upper plate protruding portion 566, the lower plate side portion 584, and the lower plate protruding portion 586.

An injection plate 520 is provided between the upper plate 560 and the lower plate 580, and the groove 544 is provided to the space through which the edge region of the injection plate 540 can be inserted. The height of the recess 544 is substantially the same as the thickness of the injection plate 520. Due to the above structure, after the injection plate 520, the upper plate 560, and the lower plate 580 are assembled, the edge region of the injection plate 520 is disposed to overlap the upper plate projection 566 from the top. Viewed from the bottom, the edge regions of the injection plate 520 are arranged to overlap the lower plate projections 586.

A plurality of upper apertures 562 are defined in the upper panel side portion 564. A plurality of lower holes 582 are defined in the lower plate side portion 584. The number of upper holes 562 is the same as the number of lower holes 582. A plurality of lower apertures 582 can be disposed to face a plurality of upper apertures 562, respectively. The combination of the upper hole 562 and the lower hole 582 serves as the above-described coupling hole 542.

FIG. 5 is a cross-sectional view of the spacer 500 when it is fixed to the process chamber 100. Referring to FIG. 5, the injection plate 520 is disposed between the upper plate 560 and the lower plate 580, and the upper plate 560 and the lower plate 580 are in contact with each other. Thereafter, the upper hole 562 of the upper plate 560 and the lower hole 582 of the lower plate 580 are aligned with each other. The coupling member 590 passes through the lower hole 582 and the upper hole 562, and is coupled to the screw groove defined in the process chamber 100 by a screw.

6 and 7 are views of a spacer 500a in accordance with another embodiment of the present invention. Figure 6 is an exploded perspective view of the spacer 500a. Figure 7 is a cross-sectional view of the spacer 500a of Figure 6. Referring to Figures 6 and 7, the spacer 500a has an injection plate 520a and a fixed plate 540a. The spacer 500a of FIG. 6 is similar to the spacer 500 of FIG. 2 except for the shape of the fixing plate 540a. The fixing plate 540a has a first plate body 560a and a second plate body 580a. The first plate body 560a and the second plate body 580a each have an arc shape having a central angle of about 180 degrees. The first plate body 560a and the second plate body 580a are combined with each other to constitute a ring shape. The recesses 544a into which the edge regions of the injection plate 520a are inserted are defined inside the first plate body 560a and the second plate body 580a. Further, the first plate body 560a and the second plate body 580a have the above-described coupling hole 542a.

Figure 8 is a partial perspective view of a spacer 500b in accordance with another embodiment of the present invention. Referring to Figure 8, the spacer 500b has an injection plate 520b and a fixed plate 540b. As one component, the fixing plate 540b has a substantially annular shape. The outer surface of the injection plate 520b may be attached to the inner surface of the fixed plate 540 by an adhesive 550b. Alternatively, the injection plate 520b can be forcibly fitted into the fixed plate 540b.

The subject matter disclosed above is to be considered as illustrative and not restrictive, and the scope of the claims category. Therefore, the embodiments and the drawings disclosed in the disclosure are not intended to limit the technical spirit of the present invention, but rather to explain the technical spirit. The scope of the technical spirit of the present disclosure is not limited by the embodiments and the drawings, and the scope of the disclosure should be construed based on the scope of the appended claims. Therefore, all technical spirits belonging to the same scope should be construed as being included in the scope of the disclosure.

500‧‧‧ spacer

520‧‧‧Injection plate

522‧‧‧ injection hole

540‧‧‧fixed board

542‧‧‧ coupling hole

560‧‧‧ upper board

580‧‧‧lower board

Claims (24)

A substrate processing apparatus, comprising: a processing chamber including a reaction chamber and a plasma generating chamber provided at an upper portion of the reaction chamber; a supporting unit disposed in the reaction chamber and Supporting the substrate; a gas supply unit that supplies gas to the plasma generation chamber; a plasma source that generates plasma from the gas supplied to the plasma generation chamber; and a spacer disposed at Between the reaction chamber and the plasma generating chamber and having a plurality of injection holes for supplying the plasma generated in the plasma generating chamber to the reaction chamber; wherein the spacer comprises: an injection plate And having a plurality of injection holes; and a fixing plate disposed at a periphery of the injection plate, and the fixing plate is coupled to the injection plate and fixed to the processing chamber, wherein the injection plate is made of a first material Made up, and the fixing plate is made of a second material different from the first material. The device of claim 1, wherein the fixing plate comprises a ring shape. The device of claim 2, wherein the fixing plate comprises a coupling hole, and the spacer is fixed to the process chamber by a coupling member inserted through the coupling hole. The device of claim 3, wherein the fixing plate comprises: An upper plate having an annular shape; and a lower plate disposed to face the upper plate and below the upper plate, wherein the injection plate is provided between the upper plate and the lower plate. The apparatus of claim 4, wherein the upper plate includes a side portion of the upper plate surrounding a periphery of the injection plate; and an upper plate protrusion projecting inwardly at an upper portion of the side portion of the upper plate, Wherein the lower plate includes a lower plate side portion surrounding a periphery of the injection plate; and a lower plate protrusion projecting inwardly at a lower portion of the lower plate side portion, wherein an edge region of the injection plate is inserted Up to a space defined by the upper plate projection, the upper panel side portion, the lower panel side portion, and the lower panel projection. The apparatus of claim 5, wherein the coupling hole is defined by an upper aperture defined in the side portion of the upper panel and a lower aperture defined in the side portion of the lower panel and extending from the lower aperture. The device of claim 1, wherein an inner surface of the fixing plate has a recess, wherein an edge region of the spacer is inserted into the recess. The device of claim 1, wherein the fixing plate is coupled to the injection plate by an adhesive. The device of claim 1, wherein the spacer is made of a conductive material The material is made and in contact with the process chamber, and the process chamber is grounded. The apparatus of any one of claims 1 to 9, wherein the first material has a radical pass rate higher than a second material, and the second material has a stronger brittleness than the first material. The apparatus of any one of claims 1 to 9, wherein the first material is made of a material containing SiO ₂ . The apparatus of claim 11, wherein the second material is made of a material containing Al or anodized Al. A substrate processing apparatus comprising: a process chamber; a support unit provided in the process chamber and supporting the substrate; and a spacer disposed on an upper portion of the support unit, the spacer having a An injection hole through which the power supply slurry passes, wherein the spacer includes an injection plate having the injection hole; a fixing plate surrounding the injection plate and fixed to the process chamber, and wherein the injection plate has a higher than the fixed Free radical pass rate of the plate. The apparatus of claim 13, wherein the fixing plate is formed to have a stronger brittleness than the injection plate. The apparatus of claim 14, wherein the injection plate is made of a quartz material, and the fixing plate is made of Al or anodized Al. The device of any one of claims 13 to 15, wherein the solid The fixed plate has an annular shape, and an inner surface of the fixed plate has a groove for inserting an edge region of the injection plate. The device of claim 16, wherein the spacer is secured to the process chamber by a coupling member that is inserted through a coupling aperture defined in the mounting plate. A spacer comprising: an injection plate having a hole vertically passing through the injection plate; and a fixing plate coupled to the injection plate and surrounding the injection plate, and having a structure for use with an external structure The coupling hole is coupled to the injection plate, wherein the injection plate and the fixing plate have different materials. The separator of claim 18, wherein the injection plate has a free radical passage rate higher than the fixed plate. The separator of claim 19, wherein the fixing plate has a stronger brittleness than the injection plate. The separator of claim 18, wherein the injection plate is made of a material containing quartz. The separator of claim 21, wherein the fixing plate is made of a material containing Al or anodized Al. The separator of any one of claims 18 to 22, wherein the fixing plate has an annular shape, and an inner surface of the fixing plate has a groove into which an edge region of the injection plate is inserted. The separator of any one of claims 18 to 22, wherein the fixing plate comprises an upper plate and a lower plate. Wherein the upper plate comprises: an upper plate side portion surrounding a periphery of the injection plate; an upper plate protrusion projecting inwardly at an upper portion of the upper plate side portion, wherein the lower plate comprises: a lower portion a side portion of the plate surrounding a periphery of the injection plate; and a lower plate protrusion projecting inwardly in a lower region of a side portion of the lower plate, wherein the edge region of the injection plate is inserted into the upper plate a space defined by the protrusion, the side portion of the upper plate, the side portion of the lower plate, and the protrusion of the lower plate.