KR20090039446A - Apparatus for ashing - Google Patents

Apparatus for ashing Download PDF

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Publication number
KR20090039446A
KR20090039446A KR1020070105095A KR20070105095A KR20090039446A KR 20090039446 A KR20090039446 A KR 20090039446A KR 1020070105095 A KR1020070105095 A KR 1020070105095A KR 20070105095 A KR20070105095 A KR 20070105095A KR 20090039446 A KR20090039446 A KR 20090039446A
Authority
KR
South Korea
Prior art keywords
baffle plate
chamber
ashing
baffle
gas
Prior art date
Application number
KR1020070105095A
Other languages
Korean (ko)
Inventor
이정훈
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020070105095A priority Critical patent/KR20090039446A/en
Publication of KR20090039446A publication Critical patent/KR20090039446A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Abstract

An ashing device is provided. An ashing apparatus according to an embodiment of the present invention, a chamber for forming an internal space for the ashing process, a gas injection tube provided in the upper chamber and for supplying gas into the chamber, and provided inside the chamber and injected through the gas injection tube And a baffle plate in which holes for passing the gas are formed, and a baffle support for fixing the baffle plate and moving the baffle plate up and down.

Description

Ashing Device {Apparatus for ashing}

The present invention relates to an ashing apparatus, and more particularly, to an ashing apparatus for improving the uniformity of ashing.

In general, in the semiconductor manufacturing process, processes such as deposition of an insulating film and a metal material, etching, application of a photosensitive agent, development, and asher are repeated several times to create an array of fine patterning, and to remove foreign substances generated in each process. As a process, there exists a washing | cleaning process using pure water or a chemical liquid.

The ashing process is a process of removing a photoresist used after a photo process from a wafer which is a substrate to be processed, and there are a method using plasma and a method using ozone.

Among them, the method using plasma generates plasma by applying microwave power of high power to a reaction gas containing oxygen, thereby discharging carbon dioxide produced by reacting oxygen radicals, a byproduct of oxygen plasma, and photoresist through a vacuum pump, to obtain photoresist. How to remove.

As shown in FIG. 1, the ashing apparatus includes a chamber 10, a gas injection tube 20, a baffle plate 30, a baffle support 40, an electrode 50, and a substrate chuck 60. do. The ashing process is performed in the chamber 10, and a gas injection tube 20 is formed at an upper end thereof. Meanwhile, a plurality of holes 31 are formed in the baffle plate 30 as shown in FIG. 2. In addition, the baffle plate 50 is formed of a metal material to minimize damage to the substrate 30 by ions included in the plasma. Accordingly, only the radicals excluding the cationic electrons in the plasma are emitted through the holes 51 formed in the baffle plate 50.

The baffle support 40 is a tube shape made of Teflon material is fitted to the lower portion of the chamber 10 to position the baffle plate 30 thereon. The electrode 50 is positioned at the bottom of the chamber 10 to correspond to the holes 31 of the baffle plate 30. Therefore, the gas injected into the gas injection tube 20 flows constantly through the holes 31 of the baffle plate 30 to the electrode 50. The substrate chuck 40 supports the substrate 30.

In the conventional ashing apparatus, when the baffle plate 30 is deformed in heat, the ashing device moves on the baffle support 40, thereby causing a phenomenon in which holes 31 and the electrode 50 of the baffle plate 30 are inconsistent. Accordingly, there is a problem that the gas does not uniformly act on the substrate. In addition, the holes 31 of the baffle plate 30 are configured to have the same diameter, so that the gas 31 is not smoothly supplied to the hole 31 at the edge thereof.

The present invention has been devised to improve the above problems, and the problem to be solved by the present invention is to provide an ashing device in which the gas is uniformly supplied.

The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, an ashing apparatus according to an embodiment of the present invention, a chamber for forming an internal space for the ashing process, a gas injection tube for supplying a gas in the chamber and provided in the chamber, and the inside of the chamber And a baffle plate in which holes for passing the gas injected through the gas injection tube are formed, and a baffle support for fixing the baffle plate and moving the baffle plate up and down.

Specific details of other embodiments are included in the detailed description and drawings.

According to the ashing apparatus of the present invention, there are one or more of the following effects.

First, the baffle plate is formed of anodized aluminum to minimize deformation due to heat.

Second, it is possible to adjust the height of the baffle plate to adjust the residence time and flow rate of the inlet gas.

Third, the baffle plate may be fixed to reduce the ashing unevenness caused by the mismatch between the holes and the electrodes.

Fourth, there is also an advantage that the gas supply to the edge smoothly by increasing the diameter of the holes of the edge than the center hole of the baffle plate.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, the present invention will be described with reference to the drawings for describing the ashing apparatus according to embodiments of the present invention.

3 shows an ashing apparatus according to an embodiment of the present invention.

The ashing apparatus according to an embodiment of the present invention includes a chamber 110, a gas injection tube 120, a baffle plate 130, a baffle support 140, an electrode 150, and a substrate chuck 160.

The chamber 110 forms an inner space for the ashing process. The chamber 110 is a sealed space for isolating the plasma space maintaining the plasma state from the outside. The chamber 110 is composed of a housing 112 and a cover 111 for opening and closing the opened upper portion of the housing 112. The cover 111 of the chamber 110 can be opened and closed so that the substrate 170 can be accessed and separated from the outside.

The gas injection pipe 120 is provided above the chamber 110 and supplies gas into the chamber. In the ashing process, the gas contains oxygen, which generates plasma to form oxygen radicals. The gas injection pipe 120 is preferably formed so that the gas is supplied from the upper side to the lower side as shown in FIG.

The baffle plate 130 is provided inside the chamber 110, and holes 131 are formed to pass gas injected through the gas injection pipe 120. The holes 131 of the baffle plate 130 are larger in diameter from the center to the edge. Thus, the problem of lowering the ashing rate caused by the insufficiency of gas supply to the edge is solved.

The material of the baffle plate 130 is preferably formed of anodized aluminum material. In general, the material of the baffle plate 130 is used as a teflon, but since the warp phenomenon easily occurs due to heat, the teflon is preferably formed of anodized aluminum material.

The baffle support 140 fixes the baffle plate 130 and moves the baffle plate up and down. The baffle support part 140 preferably includes a baffle fixing part 141, a baffle support shaft 142, and a baffle driving device 143.

The baffle fixing part 141 fixes the baffle plate so that the holes 131 and the electrode 150 of the baffle plate 130 correspond to each other. Therefore, the ashing nonuniformity caused by the mismatch between the hole 131 and the electrode 150 of the baffle plate 130 can be reduced.

The baffle support shaft 142 supports the baffle plate 130, and the baffle driving device 143 moves the baffle support shaft 142 up and down to allow the baffle plate 130 to be moved up and down. Thus, the residence time and flow rate of the inlet gas can be controlled. The baffle drive 143 is preferably composed of a hydraulic device.

The electrode 150 is positioned at the bottom of the chamber 110 to correspond to the holes 131 of the baffle plate 130. Therefore, the gas injected into the gas injection tube 120 flows constantly through the holes 131 of the baffle plate 130 to the electrode 150.

The substrate chuck 160 is provided below the inside of the chamber 110 and supports the substrate 170 that is the object of the ashing process.

4 is a view showing the baffle plate 130 of the ashing device according to an embodiment of the present invention.

As described above, the holes 131 of the baffle plate 130 are larger in diameter from the center to the edge. Thus, the problem of lowering the ashing rate caused by the insufficiency of gas supply to the edge is solved.

Referring to the operation of the ashing device according to the present invention configured as described above are as follows.

The lid 111 of the chamber 110 is opened to seat the substrate 170 on the substrate chuck 160. The cover 111 is closed when the substrate 170 is seated on the substrate chuck 160. Gas generated through the plasma generator (not shown) is introduced into the chamber 110 through the gas injection pipe 120. In the ashing process, the gas contains oxygen, which generates plasma to form oxygen radicals.

The introduced gas passes through the holes 131 of the baffle plate 130 to the electrode 150. Since the diameters of the holes 131 of the baffle plate 130 are larger from the center to the edges, the gas supply is smooth at the edges.

If it is necessary to increase the gas residence time during the process, the baffle drive unit 143 of the baffle support 140 raises the baffle plate 130. In addition, the baffle drive unit 143 of the baffle support 140 lowers the baffle plate 130 in order to increase the flow rate of the gas acting on the substrate 170 during the process.

Although the baffle plate 130 is heated during the process, the baffle fixing part 141 of the baffle support part 140 fixes the baffle plate so that the holes 131 and the electrode 150 of the baffle plate correspond to each other.

Those skilled in the art will appreciate that the present invention can be embodied in other specific forms without changing the technical spirit or essential features of the present invention. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is indicated by the scope of the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and the equivalent concept are included in the scope of the present invention. Should be interpreted.

1 is a view showing an ashing apparatus according to the prior art.

Figure 2 is a view showing a baffle plate of the ashing device according to the prior art.

3 shows an ashing apparatus according to an embodiment of the present invention.

4 is a view showing a baffle plate of the ashing device according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

110: chamber 111: cover

112: housing 120: gas injection tube

130: baffle plate 131: hole

140: baffle support portion 141: baffle fixing portion

142: baffle support shaft 143: baffle drive

150: electrode 160: substrate chuck

170: substrate

Claims (2)

A chamber forming an inner space for the ashing process; A gas injection tube provided on the chamber and configured to supply a gas into the chamber; A baffle plate provided in the chamber and having holes for passing gas injected through the gas injection tube; And Ashing device for fixing the baffle plate and including a baffle support for moving the baffle plate up and down. The method of claim 1, The baffle plate is anodized aluminum material and the hole of the baffle plate has a larger diameter from the center to the edge toward the edge.
KR1020070105095A 2007-10-18 2007-10-18 Apparatus for ashing KR20090039446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070105095A KR20090039446A (en) 2007-10-18 2007-10-18 Apparatus for ashing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070105095A KR20090039446A (en) 2007-10-18 2007-10-18 Apparatus for ashing

Publications (1)

Publication Number Publication Date
KR20090039446A true KR20090039446A (en) 2009-04-22

Family

ID=40763328

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070105095A KR20090039446A (en) 2007-10-18 2007-10-18 Apparatus for ashing

Country Status (1)

Country Link
KR (1) KR20090039446A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101505536B1 (en) * 2012-05-14 2015-03-25 피에스케이 주식회사 A baffle and an apparatus for treating a substrate with the baffle
CN111463112A (en) * 2019-01-18 2020-07-28 东京毅力科创株式会社 Coating film forming method and coating film forming apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101505536B1 (en) * 2012-05-14 2015-03-25 피에스케이 주식회사 A baffle and an apparatus for treating a substrate with the baffle
CN111463112A (en) * 2019-01-18 2020-07-28 东京毅力科创株式会社 Coating film forming method and coating film forming apparatus
CN111463112B (en) * 2019-01-18 2024-04-02 东京毅力科创株式会社 Coating film forming method and coating film forming apparatus

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