TWI503899B - 結合金屬鍺矽材料之基板 - Google Patents
結合金屬鍺矽材料之基板 Download PDFInfo
- Publication number
- TWI503899B TWI503899B TW098145607A TW98145607A TWI503899B TW I503899 B TWI503899 B TW I503899B TW 098145607 A TW098145607 A TW 098145607A TW 98145607 A TW98145607 A TW 98145607A TW I503899 B TWI503899 B TW I503899B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- substrate
- forming
- metal
- semiconductor device
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/60—Seals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/097—Interconnects arranged on the substrate or the lid, and covered by the package seal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/013—Manufacture or treatment of die-attach connectors
- H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
- H10W72/01333—Manufacture or treatment of die-attach connectors using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01335—Manufacture or treatment of die-attach connectors using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/013—Manufacture or treatment of die-attach connectors
- H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
- H10W72/01338—Manufacture or treatment of die-attach connectors using blanket deposition in gaseous form, e.g. by CVD or PVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/013—Manufacture or treatment of die-attach connectors
- H10W72/01351—Changing the shapes of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01951—Changing the shapes of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07332—Compression bonding, e.g. thermocompression bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07336—Soldering or alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
- H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/321—Structures or relative sizes of die-attach connectors
- H10W72/322—Multilayered die-attach connectors, e.g. a coating on a top surface of a core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/331—Shapes of die-attach connectors
- H10W72/332—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/331—Shapes of die-attach connectors
- H10W72/334—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
- H10W72/3524—Eutectic alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/981—Auxiliary members, e.g. spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/60—Seals
- H10W76/67—Seals characterised by their materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/356,939 US8058143B2 (en) | 2009-01-21 | 2009-01-21 | Substrate bonding with metal germanium silicon material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201034091A TW201034091A (en) | 2010-09-16 |
| TWI503899B true TWI503899B (zh) | 2015-10-11 |
Family
ID=42336272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098145607A TWI503899B (zh) | 2009-01-21 | 2009-12-29 | 結合金屬鍺矽材料之基板 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8058143B2 (https=) |
| EP (1) | EP2389337A4 (https=) |
| JP (1) | JP5679996B2 (https=) |
| CN (1) | CN102292280B (https=) |
| TW (1) | TWI503899B (https=) |
| WO (1) | WO2010090798A2 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE537499C2 (sv) * | 2009-04-30 | 2015-05-26 | Silex Microsystems Ab | Bondningsmaterialstruktur och process med bondningsmaterialstruktur |
| DE102009026628A1 (de) * | 2009-06-02 | 2010-12-09 | Robert Bosch Gmbh | Mikromechanisches Bauelement und Verfahren zum Herstellen eines mikromechanischen Bauelements |
| US8378490B2 (en) * | 2011-03-15 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor apparatus including a metal alloy between a first contact and a second contact |
| US8652865B2 (en) * | 2011-08-16 | 2014-02-18 | Freescale Semiconductor, Inc. | Attaching a MEMS to a bonding wafer |
| ITTO20110995A1 (it) * | 2011-10-31 | 2013-05-01 | St Microelectronics Srl | Dispositivo micro-elettro-meccanico dotato di regioni conduttive sepolte e relativo procedimento di fabbricazione |
| US8633088B2 (en) | 2012-04-30 | 2014-01-21 | Freescale Semiconductor, Inc. | Glass frit wafer bond protective structure |
| US8749036B2 (en) | 2012-11-09 | 2014-06-10 | Analog Devices, Inc. | Microchip with blocking apparatus and method of fabricating microchip |
| US10160638B2 (en) | 2013-01-04 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a semiconductor structure |
| DE102014210852B4 (de) | 2014-06-06 | 2022-10-06 | Robert Bosch Gmbh | Bauteil mit zwei Halbleiter-Bauelementen, die über eine strukturierte Bond-Verbindungsschicht miteinander verbunden sind, und Verfahren zum Herstellen eines solchen Bauteils |
| US9418830B2 (en) | 2014-06-27 | 2016-08-16 | Freescale Semiconductor, Inc. | Methods for bonding semiconductor wafers |
| US20170081178A1 (en) * | 2015-09-22 | 2017-03-23 | Freescale Semiconductor, Inc. | Semiconductor device package with seal structure |
| GB2546830B (en) * | 2016-01-29 | 2018-11-14 | Cirrus Logic Int Semiconductor Ltd | Integrated MEMS transducers |
| US10002844B1 (en) * | 2016-12-21 | 2018-06-19 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US10508030B2 (en) | 2017-03-21 | 2019-12-17 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
| US10167191B2 (en) | 2017-04-04 | 2019-01-01 | Kionix, Inc. | Method for manufacturing a micro electro-mechanical system |
| US10793427B2 (en) * | 2017-04-04 | 2020-10-06 | Kionix, Inc. | Eutectic bonding with AlGe |
| CN109422234B (zh) * | 2017-09-01 | 2021-04-09 | 中芯国际集成电路制造(上海)有限公司 | 测试结构及其制造方法 |
| IT201700103511A1 (it) * | 2017-09-15 | 2019-03-15 | St Microelectronics Srl | Dispositivo microelettronico dotato di connessioni protette e relativo processo di fabbricazione |
| US11380597B2 (en) | 2017-12-22 | 2022-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures |
| CN108203076B (zh) * | 2018-01-03 | 2020-04-14 | 上海华虹宏力半导体制造有限公司 | 晶圆键合方法 |
| US11004757B2 (en) | 2018-05-14 | 2021-05-11 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US11313877B2 (en) | 2018-06-19 | 2022-04-26 | Kionix, Inc. | Near-zero power wakeup electro-mechanical system |
| US12374641B2 (en) | 2019-06-12 | 2025-07-29 | Adeia Semiconductor Bonding Technologies Inc. | Sealed bonded structures and methods for forming the same |
| CN114552378B (zh) | 2020-11-20 | 2023-03-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | 窄线宽激光器 |
| US20240347386A1 (en) * | 2023-04-12 | 2024-10-17 | Honeywell International Inc. | Bonding layer between stacked integrated circuits |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW521395B (en) * | 2000-10-19 | 2003-02-21 | Ibm | A method of preparing a relaxed SiGe layer on an insulator and a SiGe/Si heterostructure and a multiple layer substrate using the method to form |
| TW200531205A (en) * | 2003-09-02 | 2005-09-16 | Soitec Silicon On Insulator | Multifunctional metallic bonding |
| TW200717738A (en) * | 2005-08-31 | 2007-05-01 | Freescale Semiconductor Inc | MEMS package and method of forming the same |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138874A (en) * | 1979-04-18 | 1980-10-30 | Fujitsu Ltd | Semiconductor device and method of fabricating the same |
| US5693574A (en) * | 1991-02-22 | 1997-12-02 | Deutsche Aerospace Ag | Process for the laminar joining of silicon semiconductor slices |
| JP3230638B2 (ja) * | 1993-02-10 | 2001-11-19 | シャープ株式会社 | 発光ダイオードの製造方法 |
| US6090687A (en) * | 1998-07-29 | 2000-07-18 | Agilent Technolgies, Inc. | System and method for bonding and sealing microfabricated wafers to form a single structure having a vacuum chamber therein |
| JP2002050764A (ja) * | 2000-08-02 | 2002-02-15 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、アレイ基板、液晶表示装置、有機el表示装置およびその製造方法 |
| WO2002015244A2 (en) * | 2000-08-16 | 2002-02-21 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded expitaxial growth |
| US6818938B1 (en) * | 2002-12-10 | 2004-11-16 | National Semiconductor Corporation | MOS transistor and method of forming the transistor with a channel region in a layer of composite material |
| US6936491B2 (en) | 2003-06-04 | 2005-08-30 | Robert Bosch Gmbh | Method of fabricating microelectromechanical systems and devices having trench isolated contacts |
| US7034393B2 (en) | 2003-12-15 | 2006-04-25 | Analog Devices, Inc. | Semiconductor assembly with conductive rim and method of producing the same |
| US6936918B2 (en) | 2003-12-15 | 2005-08-30 | Analog Devices, Inc. | MEMS device with conductive path through substrate |
| US7442570B2 (en) | 2005-03-18 | 2008-10-28 | Invensence Inc. | Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom |
| US7538401B2 (en) * | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
| US7245009B2 (en) | 2005-06-29 | 2007-07-17 | Motorola, Inc. | Hermetic cavity package |
| US7358194B2 (en) * | 2005-08-18 | 2008-04-15 | Tokyo Electron Limited | Sequential deposition process for forming Si-containing films |
| US7553687B2 (en) * | 2006-06-28 | 2009-06-30 | Intel Corporation | Dual seed semiconductor photodetectors |
| JP4997913B2 (ja) * | 2006-10-17 | 2012-08-15 | 日産自動車株式会社 | 半導体装置および半導体装置の製造方法 |
| US8119431B2 (en) * | 2009-12-08 | 2012-02-21 | Freescale Semiconductor, Inc. | Method of forming a micro-electromechanical system (MEMS) having a gap stop |
-
2009
- 2009-01-21 US US12/356,939 patent/US8058143B2/en active Active
- 2009-12-29 TW TW098145607A patent/TWI503899B/zh not_active IP Right Cessation
-
2010
- 2010-01-13 JP JP2011548020A patent/JP5679996B2/ja not_active Expired - Fee Related
- 2010-01-13 EP EP10738898.5A patent/EP2389337A4/en not_active Withdrawn
- 2010-01-13 WO PCT/US2010/020847 patent/WO2010090798A2/en not_active Ceased
- 2010-01-13 CN CN201080005182.1A patent/CN102292280B/zh not_active Expired - Fee Related
-
2011
- 2011-10-14 US US13/273,389 patent/US8592926B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW521395B (en) * | 2000-10-19 | 2003-02-21 | Ibm | A method of preparing a relaxed SiGe layer on an insulator and a SiGe/Si heterostructure and a multiple layer substrate using the method to form |
| TW200531205A (en) * | 2003-09-02 | 2005-09-16 | Soitec Silicon On Insulator | Multifunctional metallic bonding |
| TW200717738A (en) * | 2005-08-31 | 2007-05-01 | Freescale Semiconductor Inc | MEMS package and method of forming the same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2389337A2 (en) | 2011-11-30 |
| WO2010090798A3 (en) | 2010-09-30 |
| WO2010090798A2 (en) | 2010-08-12 |
| US20100181676A1 (en) | 2010-07-22 |
| CN102292280A (zh) | 2011-12-21 |
| JP5679996B2 (ja) | 2015-03-04 |
| CN102292280B (zh) | 2015-09-23 |
| US8592926B2 (en) | 2013-11-26 |
| EP2389337A4 (en) | 2016-09-07 |
| JP2012516055A (ja) | 2012-07-12 |
| US8058143B2 (en) | 2011-11-15 |
| TW201034091A (en) | 2010-09-16 |
| US20120068325A1 (en) | 2012-03-22 |
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