TWI503889B - - Google Patents

Info

Publication number
TWI503889B
TWI503889B TW101110047A TW101110047A TWI503889B TW I503889 B TWI503889 B TW I503889B TW 101110047 A TW101110047 A TW 101110047A TW 101110047 A TW101110047 A TW 101110047A TW I503889 B TWI503889 B TW I503889B
Authority
TW
Taiwan
Application number
TW101110047A
Other languages
Chinese (zh)
Other versions
TW201332018A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201332018A publication Critical patent/TW201332018A/en
Application granted granted Critical
Publication of TWI503889B publication Critical patent/TWI503889B/zh

Links

TW101110047A 2012-01-31 2012-03-23 Etching method for organic substance layer TW201332018A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210022073.1A CN103227109B (en) 2012-01-31 2012-01-31 A kind of organic matter layer lithographic method

Publications (2)

Publication Number Publication Date
TW201332018A TW201332018A (en) 2013-08-01
TWI503889B true TWI503889B (en) 2015-10-11

Family

ID=48837506

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101110047A TW201332018A (en) 2012-01-31 2012-03-23 Etching method for organic substance layer

Country Status (2)

Country Link
CN (1) CN103227109B (en)
TW (1) TW201332018A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110211866A (en) * 2019-05-20 2019-09-06 深圳市华星光电半导体显示技术有限公司 A kind of method for etching plasma

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200929363A (en) * 2007-12-24 2009-07-01 Hynix Semiconductor Inc Method for fabricating semiconductor device
CN101615579A (en) * 2009-07-29 2009-12-30 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of semiconductor plasma etching technology
CN101866848A (en) * 2010-04-29 2010-10-20 中微半导体设备(上海)有限公司 Plasma etching method for etching organic matter layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100327413A1 (en) * 2007-05-03 2010-12-30 Lam Research Corporation Hardmask open and etch profile control with hardmask open
US8394722B2 (en) * 2008-11-03 2013-03-12 Lam Research Corporation Bi-layer, tri-layer mask CD control
US9373521B2 (en) * 2010-02-24 2016-06-21 Tokyo Electron Limited Etching processing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200929363A (en) * 2007-12-24 2009-07-01 Hynix Semiconductor Inc Method for fabricating semiconductor device
CN101615579A (en) * 2009-07-29 2009-12-30 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of semiconductor plasma etching technology
CN101866848A (en) * 2010-04-29 2010-10-20 中微半导体设备(上海)有限公司 Plasma etching method for etching organic matter layer

Also Published As

Publication number Publication date
TW201332018A (en) 2013-08-01
CN103227109A (en) 2013-07-31
CN103227109B (en) 2015-11-25

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