CN103227109B - A kind of organic matter layer lithographic method - Google Patents
A kind of organic matter layer lithographic method Download PDFInfo
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- CN103227109B CN103227109B CN201210022073.1A CN201210022073A CN103227109B CN 103227109 B CN103227109 B CN 103227109B CN 201210022073 A CN201210022073 A CN 201210022073A CN 103227109 B CN103227109 B CN 103227109B
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Abstract
Organic matter layer is as a lithographic method for bottom photoresist material layer, and described lithographic method comprises: substrate to be etched is put into plasma reaction chamber, described substrate comprises etching target organic material layer; Pass into reacting gas to plasma reaction chamber; Apply radio-frequency electrical energy to reacting gas and light plasma, described substrate is etched; Wherein said reacting gas comprises main etching gas; diluent gas and sidewall protective gas; wherein main etching gas molecule is O2; diluent gas is selected from the mixture of one of Ar, N2, CO or described several gas; sidewall protective gas is COS; diluting gas flow is greater than described main etching gas flow, and sidewall shield gas flow rate is less than main etching gas flow.
Description
Technical field
The present invention relates to a kind of plasma etching method of organic matter layer, particularly the lithographic method of the organic matter layer of one under low critical dimension (criticaldimensionCD) requires.
Background technology
In field of manufacturing semiconductor devices, utilize plasma to carry out the various reaction chamber ubiquity processed.Along with machining accuracy is more and more higher, critical dimension (criticaldimension) is more and more less, and the critical dimension of present industry reaches below 45nm, and the CPU as 22nm emerges.And existingly optically the method minimum critical dimension obtaining graphics processing is irradiated to photoresist and only can reach about 45nm, more high-precision mask aligner be obtained, great cost will be paid to obtain low dimensional figure, not there is economic worth.In order to obtain the working ability of less critical dimension under existing photoetching technique condition, prior art is widely used critical dimension and reduces technology, namely on the basis of larger mask, form hole or the groove with trapezoidal cross-section by etching, final acquisition has the mask of less critical dimension.Adopt the key of this technology to be obtain can accurately control to etch the method for result, dimension of picture in etching process can be reduced uniformly, and can not be out of shape and cause final graphics slewing distortion.Adopt such critical dimension to reduce the etching that technology can be applied to various material layers, as insulation material layer, normally siliceous inorganic matter as APL, SiO2, SiN etc.The relatively hard ratio of these material layers is easier to the channel shape controlling etching formation.But directly obtaining high-precision pattern mask to reduce procedure of processing, also having now and adding the thicker organic material layer of one deck below conventional lithography glue, by etching the method directly forming low critical dimension mask.Such material layer etches difficulty will be large many because these material layers and photoresist similar, be softer organic material layer, so be also bottom photoresist (bottomphotoresistBPR).In etching, the sidewall of these material layers is easy to the destroyed breach that formed and causes aliasing.Existing lithographic method often adopts HBr/O2, and the etching gas such as CO/O2, N2/H2 etch these BPR layers, but is difficult to obtain accurate etched features with these gases and supporting etching technics.So industry needs are a kind of can carry out accurate etching to form the lithographic method of low critical dimension figure to this organic material layer.
Summary of the invention
Summary of the invention of the present invention only provides one, and to the basic comprehension of part aspect of the present invention and feature, it is not summarize widely of the present invention, neither be used for particularly pointing out the key element of key of the present invention or delineate scope of invention.Its unique object presents concepts more of the present invention simplifiedly, for follow-up description the present invention in detail makes some place mats.
Disclosed herein a kind of organic matter layer lithographic method, described lithographic method comprises: substrate to be etched is put into plasma reaction chamber, described substrate comprises etching target organic material layer; Pass into reacting gas to plasma reaction chamber; Apply radio-frequency electrical energy to reacting gas and light plasma, described substrate is etched; Wherein said reacting gas comprises main etching gas; diluent gas and sidewall protective gas; wherein main etching gas molecule is O2; diluent gas is selected from the mixture of one of Ar, N2, CO or this three; sidewall protective gas is COS; diluting gas flow is greater than described main etching gas flow, and sidewall shield gas flow rate is less than main etching gas flow.Wherein said etching target material layer comprises one deck organic substance mask layer, and is positioned at the inorganic material layer of this organic substance mask layer upper graphic, and described graphical inorganic material layer has the first critical dimension.The figure of wherein said graphical inorganic material layer is that mask etching obtains by the photoresist with the first critical dimension figure of the side of being located thereon.Described organic substance mask layer is by being etched in the figure being formed bottom material layer and have the second critical dimension, and wherein the second critical dimension is less than the first critical dimension.And with the described organic substance mask layer with the second critical dimension figure for the second inorganic material layer below mask etching.The flow-rate ratio passing into diluent gas and main etching gas O2 in reacting gas in wherein said reaction chamber can be 5: 1 ~ 10: 1, also can be 5: 1 ~ 8: 1.The flow-rate ratio of the flow and sidewall protective gas COS that pass into diluent gas in reacting gas in wherein said reaction chamber can between 20: 1 to 6: 1.
According to one embodiment of the invention, wherein said organic substance mask material layer thickness is greater than 100nm.Described radio-frequency electrical energy is applied for the radio-frequency electrical energy of 100-1000W, and etch period continues to be greater than 30 seconds.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious: the part figures constituting this specification as follows, different embodiments is listed, to explain and to illustrate aim of the present invention together with specification.The following drawings does not depict all technical characteristics of specific embodiment, does not depict actual size and the actual proportions of parts yet.
Fig. 1 shows the present invention's plasma reaction chamber diagram.
Fig. 2 shows etachable material Rotating fields schematic diagram according to an embodiment of the invention
Fig. 3 shows one embodiment of the invention and forms the material layer structures schematic diagram after Patterned masking layer by photoetching
Fig. 4 show one embodiment of the invention by the material layer etching structure schematic diagram after mask layer etching organic matter material layer.
Fig. 5 shows the sectional view utilizing material layer after embodiment of the present invention lithographic method etching organic matter material layer.
Embodiment
The embodiment of the present invention provides a kind of system and method controlled the radio-frequency power being applied to plasma processing chamber, to realize minimum reflected power and to be effectively applied in plasma by radio-frequency power.Various embodiment all realizes automatically regulating radio-frequency power when not needing the authenticated process menu of amendment.This regulates automatically can realizing with the mode of radio frequency matching network parameter by regulating frequency coupling.
Fig. 1 shows a present invention and etches the plasma reaction chamber 1 of carrying out.This reaction chamber 1 comprises pedestal 33, and pedestal is connected with radio-frequency power supply.Wherein pedestal 33 is also connected with the radio-frequency power of low frequency as bottom electrode, by regulating the power of this low frequency radio frequency power supply to regulate isoionic energy size after plasma is lighted.Pedestal 33 comprises substrate holding apparatus 34, this substrate holding apparatus can be the device such as electrostatic chuck or mechanical chucks.Substrate 30 to be processed is fixed on above substrate holding apparatus 34.Substrate periphery also comprises an edge ring 36, and to realize substrate edge position temperature, the control of Electric Field Distribution etc., can also protect underlying device not by the plasma etching of lighting in reaction chamber.The position relative with pedestal, reaction chamber top also comprises a gas diffuser 40, and this gas diffuser can be conventional gas spray also can be other gas tip.Except capacitively coupled (CCP) the plasma reaction chamber shown in Fig. 1, lithographic method of the present invention also may be used for inductance coupling high type (ICP) plasma reaction chamber.Difference main compared with capacitively coupled is: ICP is the ionization that insulating material window radio-frequency power being penetrated reaction compartment periphery by the coil around reaction chamber enters reaction compartment and realizes reacting gas.Other can be used for lithographic method of the present invention, owing to affecting not quite, so do not repeat them here with the inventive method principal character point to the reaction chamber structure of reacting gas ionization.
Fig. 2 shows the etachable material Rotating fields schematic diagram of one embodiment of the invention.Wherein etching target 20 of the present invention normally insulation material layer, as SiO2, low-K material etc., etching target is coated with thickness larger bottom photoresist layer 13 (BPR) respectively, reticule layer is as TEOS material layer 12, and the photoresist layer 10 (PR) of the top and the anti-reflection layer 11 (BARC) of photoresist adjacent underneath.
First utilized photoetching technique to obtain the targeted graphical after amplifying by conventional method when processing and starting.And form hole or groove, at the anti-reflection layer 11 utilized below this pattern etching and reticule layer 12, formed the first figure as shown in Figure 3 100.Finally utilize this reticule layer for mask by figure 100 etching be transformed into below organic material layer 13 in go.The thickness of BPR material layer 13 selects the needs reduced according to critical dimension to determine.Usually the photoresist layer than traditional is much thick, can reach more than 100nm, as 150nm, and even 200nm.Still its material is also not exclusively identical with the photoresist layer 10 of top although be also photoresist layer for bottom photoresist layer (BPR), and such as bottom photoresist layer (BPR) does not need to add light-sensitive material.Material therefor is similar both to make photoresist only illustrate, is all identical both soft organic substance material does not represent.When utilizing reticule layer etching organic matter material layer 13, as shown in Figure 3, in organic material layer, form the figure 101 that trapezoidal cross-section structure finally forms the critical dimension of needs.
First embodiment of the invention passes into reacting gas when utilizing reticule layer 12 etching organic matter material layer 13 in reaction chamber.This reacting gas comprises main etching gas such as O2 and reacts for the free radical and organic matter layer being dissociateed oxonium ion or oxygen by rf electric field effect, forms gas and be pumped after oxidation.In order to protective side wall also will provide side wall passivation gas, as COS.COS can be combined with the carbon atom of organic matter layer sidewall and form firm chemical bond, prevents it to be oxidized by main etching gas, thus prevents sidewall to be etched formation arcuate structure.Passivation gas also can play the effect slowing down etch rate.Diluent gas can also be added as N2, Ar, CO etc. except passivation gas, overall etch rate and the concentration of gas can be regulated by the amount adjusting diluent gas.In reaction chamber, reach air pressure 20mt or lower by injecting above-mentioned process gas, the size applying radio-frequency power depends on the thickness of the organic matter layer of etching and the material of reticule layer above.The radio-frequency power of 100-1000W, 60Mhz is a kind of typical apply.Low frequency (2/13Mhz) power being connected to bottom electrode 33 is less than 250W.With specific embodiment, etching technics of the present invention and effect are described below.First embodiment of the invention, the process gas wherein passed into comprises main etching gas O2 flow 30sccm, diluent gas CO gas 200sccm and side wall passivation gas COS flow 20sccm, reaches air pressure 10mt, is applied to plasma reaction chamber continues 30 seconds with the 60Mhz rf electric field of 600W power.Its etching effect as shown in Figure 5.
Utilize oxygen as organic matter layer main etching gas, can be easy to cause the sidewall formation that is etched to wait the curved wall of tropism's etching.So the present invention with the addition of Macrodilution gas beyond main etching gas, the flow of diluent gas, much larger than main etching gas O2, reaches 20: 3, then coordinates a small amount of sidewall protective gas just can realize the accurate etching of organic matter layer, ensures etch rate simultaneously.Wherein diluent gas and main etching gas ratio even still can realize etching object of the present invention between 5: 1 to 10: 1 between 5: 1 to 8: 1.Accordingly, the flow of diluent gas and the flow-rate ratio of sidewall protective gas COS can be selected between 20: 1 to 6: 1.If adopt these gas flow ratios still can realize the etching effect shown in 5.
The gas flow air pressure that above-mentioned etching is used and power parameter all obtain based on capacitively coupled reaction chamber, the present invention also may be used for voltage couples type reaction chamber (ICP) its parameter will have a great difference, but basic invention thought is identical, the ratio of its gas flow used by be with the above embodiment of the present invention in describe close.Even if be that capacitively coupled (CCP) plasma reaction chamber also can be slightly different equally, as long as meet inventive concept equally, as long as the purposes of gas and flow-rate ratio and the present invention define in the claims and identically belong to content of the present invention.
Term used in this specification embodiment and expression way are used to describe invention instead of restriction, so these expression should not get rid of any equivalent or refill.In addition, those skilled in the art, by the understanding of specification of the present invention with to practice of the present invention, can easily expect other implementation.In multiple embodiment described herein, various aspects and/or parts can be adopted separately or are combined employing.It is emphasized that specification and embodiment are only as an example, the scope of reality of the present invention and thinking are defined by claim below.
Claims (8)
1. an organic matter layer lithographic method, described lithographic method comprises:
Substrate to be etched is put into plasma reaction chamber, described substrate comprises etching target (20) and the bottom photoresist layer (13) being positioned at etching target (20) top, be made up of organic substance material;
Pass into reacting gas to plasma reaction chamber;
Apply radio-frequency electrical energy to reacting gas and light plasma, the bottom photoresist layer (13) of described substrate is etched, to form trapezoidal cross-section structure in described bottom photoresist layer (13);
Wherein said reacting gas comprises main etching gas, diluent gas and sidewall protective gas, and wherein main etching gas molecule is O
2, diluent gas is selected from Ar, N
2, one of CO or described several gas mixture, sidewall protective gas is COS, and diluting gas flow is greater than described main etching gas flow, diluent gas and main etching gas O
2flow-rate ratio be 5: 1 ~ 10: 1, sidewall shield gas flow rate is less than main etching gas flow, and the flow of diluent gas and the flow-rate ratio of sidewall protective gas COS are between 20: 1 to 6: 1.
2. a kind of organic matter layer lithographic method according to claim 1, it is characterized in that, described bottom photoresist layer (13) top is formed with patterned inorganic material layer (12), and described graphical inorganic material layer (12) has the first critical dimension.
3. a kind of organic matter layer lithographic method according to claim 2, is characterized in that, the figure of described graphical inorganic material layer is that mask etching obtains by the photoresist with the first critical dimension figure of the side of being located thereon.
4. a kind of organic matter layer lithographic method according to claim 2, it is characterized in that, described bottom photoresist layer (13) forms the figure with the second critical dimension bottom it by aforementioned etch step, wherein said second critical dimension is less than described first critical dimension.
5. a kind of organic matter layer lithographic method according to claim 4, also comprises step below:
There is the described bottom photoresist layer (13) of the second critical dimension figure for the etching target (20) be made up of inorganic material below mask etching.
6. a kind of organic matter layer lithographic method according to claim 1, is characterized in that, the thickness of described bottom photoresist layer (13) is greater than 100nm.
7. a kind of organic matter layer lithographic method according to claim 1, is characterized in that, passes into diluent gas and main etching gas O in reacting gas in described reaction chamber
2flow-rate ratio be 5: 1 ~ 8: 1.
8. a kind of organic matter layer lithographic method according to claim 1, it is characterized in that, described radio-frequency electrical energy is applied for the radio-frequency electrical energy of 100-1000W, and etch period continues to be greater than 30 seconds.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210022073.1A CN103227109B (en) | 2012-01-31 | 2012-01-31 | A kind of organic matter layer lithographic method |
| TW101110047A TW201332018A (en) | 2012-01-31 | 2012-03-23 | Etching method for organic substance layer |
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| CN201210022073.1A CN103227109B (en) | 2012-01-31 | 2012-01-31 | A kind of organic matter layer lithographic method |
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| CN110211866A (en) * | 2019-05-20 | 2019-09-06 | 深圳市华星光电半导体显示技术有限公司 | A kind of method for etching plasma |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101675505A (en) * | 2007-05-03 | 2010-03-17 | 朗姆研究公司 | Hardmask open and etch profile control with hardmask open |
| CN102194689A (en) * | 2010-02-24 | 2011-09-21 | 东京毅力科创株式会社 | Etching processing method |
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| KR20090069122A (en) * | 2007-12-24 | 2009-06-29 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
| US8394722B2 (en) * | 2008-11-03 | 2013-03-12 | Lam Research Corporation | Bi-layer, tri-layer mask CD control |
| CN101615579B (en) * | 2009-07-29 | 2012-04-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor plasma etching technology |
| CN101866848B (en) * | 2010-04-29 | 2012-05-30 | 中微半导体设备(上海)有限公司 | Plasma etching method for etching organic matter layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101675505A (en) * | 2007-05-03 | 2010-03-17 | 朗姆研究公司 | Hardmask open and etch profile control with hardmask open |
| CN102194689A (en) * | 2010-02-24 | 2011-09-21 | 东京毅力科创株式会社 | Etching processing method |
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| TWI503889B (en) | 2015-10-11 |
| TW201332018A (en) | 2013-08-01 |
| CN103227109A (en) | 2013-07-31 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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