TWI501317B - - Google Patents

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Publication number
TWI501317B
TWI501317B TW101151228A TW101151228A TWI501317B TW I501317 B TWI501317 B TW I501317B TW 101151228 A TW101151228 A TW 101151228A TW 101151228 A TW101151228 A TW 101151228A TW I501317 B TWI501317 B TW I501317B
Authority
TW
Taiwan
Application number
TW101151228A
Other versions
TW201405661A (zh
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Filing date
Publication date
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Publication of TW201405661A publication Critical patent/TW201405661A/zh
Application granted granted Critical
Publication of TWI501317B publication Critical patent/TWI501317B/zh

Links

TW101151228A 2012-07-26 2012-12-28 光刻膠的去除方法 TW201405661A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210262373.7A CN102768476B (zh) 2012-07-26 2012-07-26 光刻胶的去除方法

Publications (2)

Publication Number Publication Date
TW201405661A TW201405661A (zh) 2014-02-01
TWI501317B true TWI501317B (zh) 2015-09-21

Family

ID=47095918

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101151228A TW201405661A (zh) 2012-07-26 2012-12-28 光刻膠的去除方法

Country Status (2)

Country Link
CN (1) CN102768476B (zh)
TW (1) TW201405661A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104345581B (zh) * 2013-07-23 2018-07-31 中微半导体设备(上海)有限公司 一种等离子体去除光刻胶的方法
CN111403829B (zh) * 2020-04-24 2021-10-01 中国科学院上海硅酸盐研究所 具有低温工作特性的水系凝胶态电解质、极片添加剂以及固态钠离子电池

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200705906A (en) * 2005-04-04 2007-02-01 Broadcom Corp Local oscillation routing plan applicable to a multiple RF band RF MIMO transceiver
CN102044479A (zh) * 2009-10-13 2011-05-04 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453157A (en) * 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
JPH1167626A (ja) * 1997-08-12 1999-03-09 Hitachi Ltd レジスト除去方法および装置
JP3886621B2 (ja) * 1997-11-25 2007-02-28 宮崎沖電気株式会社 レジスト除去方法
US7067441B2 (en) * 2003-11-06 2006-06-27 Texas Instruments Incorporated Damage-free resist removal process for ultra-low-k processing
CN101546136A (zh) * 2008-03-25 2009-09-30 中芯国际集成电路制造(上海)有限公司 一种光刻胶去除方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200705906A (en) * 2005-04-04 2007-02-01 Broadcom Corp Local oscillation routing plan applicable to a multiple RF band RF MIMO transceiver
CN102044479A (zh) * 2009-10-13 2011-05-04 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法

Also Published As

Publication number Publication date
CN102768476A (zh) 2012-11-07
CN102768476B (zh) 2014-08-20
TW201405661A (zh) 2014-02-01

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