TWI501260B - Conductive paste and substrate with conductive film - Google Patents
Conductive paste and substrate with conductive film Download PDFInfo
- Publication number
- TWI501260B TWI501260B TW100141882A TW100141882A TWI501260B TW I501260 B TWI501260 B TW I501260B TW 100141882 A TW100141882 A TW 100141882A TW 100141882 A TW100141882 A TW 100141882A TW I501260 B TWI501260 B TW I501260B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- particles
- conductive paste
- copper particles
- acid
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims description 31
- 239000002245 particle Substances 0.000 claims description 279
- 239000010949 copper Substances 0.000 claims description 258
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 257
- 229910052802 copper Inorganic materials 0.000 claims description 252
- 229920002873 Polyethylenimine Polymers 0.000 claims description 54
- 150000001875 compounds Chemical class 0.000 claims description 52
- 239000011347 resin Substances 0.000 claims description 42
- 229920005989 resin Polymers 0.000 claims description 42
- 229920000642 polymer Polymers 0.000 claims description 32
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 claims description 30
- 239000001301 oxygen Substances 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 239000005011 phenolic resin Substances 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 17
- 150000001412 amines Chemical class 0.000 claims description 14
- 230000002378 acidificating effect Effects 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 150000007942 carboxylates Chemical class 0.000 claims description 11
- 125000000524 functional group Chemical group 0.000 claims description 11
- 239000013522 chelant Substances 0.000 claims description 9
- 229920000083 poly(allylamine) Polymers 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 6
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- 239000010419 fine particle Substances 0.000 description 56
- 238000006243 chemical reaction Methods 0.000 description 50
- LTYZGLKKXZXSEC-UHFFFAOYSA-N copper dihydride Chemical compound [CuH2] LTYZGLKKXZXSEC-UHFFFAOYSA-N 0.000 description 49
- 229910000050 copper hydride Inorganic materials 0.000 description 49
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 46
- 239000000243 solution Substances 0.000 description 43
- 229910052751 metal Inorganic materials 0.000 description 39
- 239000002184 metal Substances 0.000 description 39
- 239000003638 chemical reducing agent Substances 0.000 description 38
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 33
- 238000010438 heat treatment Methods 0.000 description 33
- 125000003277 amino group Chemical group 0.000 description 32
- 229910001431 copper ion Inorganic materials 0.000 description 32
- 239000005749 Copper compound Substances 0.000 description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 31
- 150000001879 copper Chemical class 0.000 description 31
- 150000001880 copper compounds Chemical class 0.000 description 31
- 238000000034 method Methods 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 27
- -1 polyethylene terephthalate Polymers 0.000 description 25
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 23
- 239000011246 composite particle Substances 0.000 description 23
- 235000019253 formic acid Nutrition 0.000 description 23
- 238000006722 reduction reaction Methods 0.000 description 23
- 238000002156 mixing Methods 0.000 description 21
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 20
- 230000009467 reduction Effects 0.000 description 18
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- 230000000052 comparative effect Effects 0.000 description 17
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- 239000000047 product Substances 0.000 description 16
- 239000006185 dispersion Substances 0.000 description 14
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- 239000003002 pH adjusting agent Substances 0.000 description 13
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 12
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- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
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- 239000002738 chelating agent Substances 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 239000011859 microparticle Substances 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 8
- CVSVTCORWBXHQV-UHFFFAOYSA-N creatine Chemical compound NC(=[NH2+])N(C)CC([O-])=O CVSVTCORWBXHQV-UHFFFAOYSA-N 0.000 description 8
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- 239000001257 hydrogen Substances 0.000 description 8
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- 230000033116 oxidation-reduction process Effects 0.000 description 8
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- 238000003860 storage Methods 0.000 description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 6
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- 150000003839 salts Chemical class 0.000 description 5
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 235000011054 acetic acid Nutrition 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
- 229960003624 creatine Drugs 0.000 description 4
- 239000006046 creatine Substances 0.000 description 4
- DDRJAANPRJIHGJ-UHFFFAOYSA-N creatinine Chemical compound CN1CC(=O)NC1=N DDRJAANPRJIHGJ-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052987 metal hydride Inorganic materials 0.000 description 4
- 150000004681 metal hydrides Chemical class 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical class O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 4
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- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 4
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- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003733 fiber-reinforced composite Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- HBROZNQEVUILML-UHFFFAOYSA-N salicylhydroxamic acid Chemical compound ONC(=O)C1=CC=CC=C1O HBROZNQEVUILML-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/02—Polyamines
- C08G73/0206—Polyalkylene(poly)amines
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
- C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
- C08L39/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
- C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/02—Polyamines
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/66—Additives characterised by particle size
- C09D7/67—Particle size smaller than 100 nm
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/66—Additives characterised by particle size
- C09D7/69—Particle size larger than 1000 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K13/00—Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
- C08K13/04—Ingredients characterised by their shape and organic or inorganic ingredients
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
- C08K3/11—Compounds containing metals of Groups 4 to 10 or of Groups 14 to 16 of the Periodic Table
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- Conductive Materials (AREA)
- Powder Metallurgy (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Description
本發明係關於一種導電性膏及使用其之附有導電膜之基材。The present invention relates to a conductive paste and a substrate using the same with a conductive film.
先前,已知有將導電性膏使用於電子零件或印刷配線基板等配線導體之形成之方法。其中,印刷配線基板之製造係於絕緣基材上將導電性膏塗佈成所需之圖案形狀並硬化而形成配線圖案來進行。Conventionally, a method of forming a conductive paste for forming a wiring conductor such as an electronic component or a printed wiring board has been known. Among them, the production of the printed wiring board is performed by applying a conductive paste to a desired pattern shape on an insulating substrate and curing it to form a wiring pattern.
作為導電性膏,從提高電子設備或配線基板之可靠性之觀點而言,提出有使用銅膏代替以銀為主成分之銀膏之技術。銅膏由於難以產生遷移現象,故可提高電路之連接可靠性。As a conductive paste, from the viewpoint of improving the reliability of an electronic device or a wiring board, a technique of using a copper paste instead of a silver paste containing silver as a main component has been proposed. Since the copper paste is difficult to cause migration, the connection reliability of the circuit can be improved.
上述印刷配線基板等要求各種特性,對配線圖案之基材之密接性由於對可靠性產生重要之影響,故為最重要之特性之一。The printed wiring board and the like require various characteristics, and the adhesion to the base material of the wiring pattern is one of the most important characteristics because it has an important influence on reliability.
作為使用於印刷配線基板之基材,先前係使用玻璃、聚對苯二甲酸乙二酯(PET,Polyethylene Terephthalate)、聚醯亞胺(PI,Polyimide)等,但近年來,以觸控面板等之用途為中心,而使用於玻璃或PET等絕緣基材上形成有作為透明導電膜之摻雜錫之氧化銦(ITO,Indium Tin Oxide)膜之附有ITO膜之基材。並且,提出有於ITO膜上形成有導電膜之構造(例如參照專利文獻1)。As a base material used for a printed wiring board, glass, polyethylene terephthalate (PET), polyimine (PI, Polyimide), etc. are used previously, but in recent years, a touch panel etc. are used. The use is centered on a substrate coated with an ITO film of a tin-doped indium tin oxide (ITO) film as a transparent conductive film on an insulating substrate such as glass or PET. Further, a structure in which a conductive film is formed on an ITO film has been proposed (for example, see Patent Document 1).
於此種構造中,作為提高導電膜對ITO膜之密接性之方法,提出有將使過渡金屬化合物溶解於有機溶劑中而成之溶液塗佈於ITO膜之表面,並實施加熱處理而形成基底層之方法(例如參照專利文獻2)。In such a structure, as a method of improving the adhesion of the conductive film to the ITO film, a solution obtained by dissolving a transition metal compound in an organic solvent is applied to the surface of the ITO film, and heat treatment is performed to form a substrate. The method of the layer (for example, refer to Patent Document 2).
然而,該方法由於必須形成基底層,並在基底層形成後進行塗佈導電性膏之步驟,故存在步驟數增加、作業性差之問題。However, in this method, since it is necessary to form a base layer and to apply a conductive paste after the base layer is formed, there is a problem that the number of steps is increased and workability is poor.
再者,先前為了提高印刷配線基板之配線圖案(導電膜)之耐熱性、耐濕性、堅牢性等耐久性,而提出有:包含銅粉末、酚樹脂之類的熱固性樹脂、月桂醯肌胺酸之類的含有胺基之羧酸、及1分子中含有3個以上氮原子之重量平均分子量為80~30000的聚胺(例如聚乙烯亞胺類)之導電性膏或導電粉;以及含有酚樹脂之類的熱固性樹脂、及對甲苯磺酸之胺鹽之導電性膏(例如參照專利文獻3、專利文獻4)。但是,於使用專利文獻3中所示之導電性膏之情形時,如在下述實施例中作為比較例6及比較例7所記載般,對ITO膜無法表現出良好之密接性。又,於使用專利文獻4中所示之導電膏之情形時,亦如在下述實施例中作為比較例8及比較例9所記載般,對ITO膜無法表現出良好之密接性。In addition, in order to improve durability such as heat resistance, moisture resistance, and fastness of a wiring pattern (conductive film) of a printed wiring board, it is proposed to include a thermosetting resin such as copper powder or a phenol resin, and lauric acid a conductive paste or conductive powder containing an amine group-containing carboxylic acid such as an acid and a polyamine (for example, a polyethyleneimine) having a weight average molecular weight of 80 to 30,000 in one molecule and having 3 or more nitrogen atoms; A conductive paste of a thermosetting resin such as a phenol resin or an amine salt of p-toluenesulfonic acid (see, for example, Patent Document 3 and Patent Document 4). However, in the case of using the conductive paste shown in Patent Document 3, as described in Comparative Example 6 and Comparative Example 7 in the following examples, the ITO film did not exhibit good adhesion. Further, in the case of using the conductive paste shown in Patent Document 4, as described in Comparative Example 8 and Comparative Example 9 in the following examples, the ITO film did not exhibit good adhesion.
專利文獻1:日本專利特開2009-116452公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-116452
專利文獻2:日本專利特開2005-293937公報Patent Document 2: Japanese Patent Laid-Open Publication No. 2005-293937
專利文獻3:日本專利特開平4-253773號公報Patent Document 3: Japanese Patent Laid-Open No. Hei 4-253773
專利文獻4:日本專利特開平9-293413號公報Patent Document 4: Japanese Patent Laid-Open No. Hei 9-293413
本發明係為解決上述問題而完成者,其目的在於提供一種無需於ITO膜上形成基底層而藉由直接塗佈並使其硬化即可形成表現良好之密接性、且導電性高之導電膜之導電性膏,及使用該導電性膏所形成之附有導電膜之基材。The present invention has been made to solve the above problems, and an object thereof is to provide a conductive film which is excellent in adhesion and can be formed by directly coating and hardening a base layer without forming an underlayer on an ITO film. The conductive paste and the substrate with the conductive film formed using the conductive paste.
本發明係提供如下之導電性膏及附有導電膜之基材。The present invention provides the following conductive paste and a substrate with a conductive film.
[1]一種導電性膏,其特徵在於含有:[1] A conductive paste characterized by comprising:
(A)平均粒徑為10 nm~20 μm之銅粒子,(A) copper particles having an average particle diameter of 10 nm to 20 μm,
(B)分子中至少含有1個一級胺基之高分子化合物之羧酸鹽(羧酸之包括羰基之碳在內之碳數為10以下),及(B) a carboxylate of a polymer compound having at least one primary amino group in the molecule (the number of carbons including a carbon of a carbonyl group is 10 or less), and
(C)含有能夠與上述一級胺基反應之酸性官能基之樹脂。(C) a resin containing an acidic functional group capable of reacting with the above primary amine group.
[2]如[1]之導電性膏,其中上述(A)銅粒子係表面氧量為0.5以下之銅粒子。[2] The conductive paste according to [1], wherein the (A) copper particles are copper particles having a surface oxygen content of 0.5 or less.
[3]如[1]或[2]之導電性膏,其中含有上述一級胺基之高分子化合物之質量平均分子量(Mw)為300~20000。[3] The conductive paste according to [1] or [2], wherein the polymer compound containing the primary amino group has a mass average molecular weight (Mw) of 300 to 20,000.
[4]如[1]至[3]中任一項之導電性膏,其中含有上述一級胺基之高分子化合物依據JIS K7237之規定所得之胺值為700~1500 mgKOH/g。[4] The conductive paste according to any one of [1] to [3] wherein the polymer compound containing the above-described primary amine group has an amine value of from 700 to 1500 mgKOH/g according to the specification of JIS K7237.
[5]如[1]至[4]中任一項之導電性膏,其中含有上述一級胺基之高分子化合物為聚乙烯亞胺或聚烯丙基胺。[5] The conductive paste according to any one of [1] to [4] wherein the polymer compound containing the above primary amine group is polyethyleneimine or polyallylamine.
[6]如[1]至[5]中任一項之導電性膏,其中上述(B)成分之羧酸鹽為甲酸鹽。[6] The conductive paste according to any one of [1] to [5] wherein the carboxylate of the component (B) is a formate.
[7]如[1]至[6]中任一項之導電性膏,其中上述(C)含有酸性官能基之樹脂為酚樹脂。[7] The conductive paste according to any one of [1] to [6] wherein the (C) acid functional group-containing resin is a phenol resin.
[8]如[1]至[7]中任一項之導電性膏,其中上述(B)含有一級胺基之高分子化合物之羧酸鹽之含量相對於上述(A)銅粒子100質量份為0.05~5質量份。[8] The conductive paste according to any one of [1] to [7] wherein the content of the carboxylate of the polymer compound containing the primary amine group (B) is 100 parts by mass relative to the copper particle of the above (A). It is 0.05 to 5 parts by mass.
[9]如[1]至[8]中任一項之導電性膏,其更含有與在25℃下離子強度為0.1之情形時之銅離子的穩定度常數logKCu 為5~15之螯合化合物。[9] of [1] to [8] in the conductive paste according to any one of the, further comprising at 25 deg.] C and ionic strength of the case when a copper ion-stabilization degree constant of 0.1 logK Cu chelate is from 5 to 15 of Compound.
[10]一種附有導電膜之基材,其特徵在於包含:具有摻雜錫之氧化銦(ITO)膜之基材、及於上述ITO膜上塗佈如[1]至[9]中任一項之導電性膏並使其硬化而成之導電膜。[10] A substrate with a conductive film, comprising: a substrate having a tin-doped indium oxide (ITO) film, and coating on the ITO film as in [1] to [9] A conductive paste that hardens and forms a conductive film.
依據本發明,可獲得無需於具有ITO膜之基材之ITO膜上形成基底層即可形成與ITO膜之密接性良好且導電性高之導電膜之導電性膏。又,該導電性膏於保存穩定性方面亦優異,可形成長時間保存後與ITO膜之密接性或導電性亦不會降低之導電膜。According to the present invention, it is possible to obtain a conductive paste which can form a conductive film having good adhesion to an ITO film and having high conductivity without forming a base layer on an ITO film having a substrate having an ITO film. Further, the conductive paste is excellent in storage stability, and can form a conductive film which does not deteriorate in adhesion to the ITO film or conductivity after storage for a long period of time.
進而,依據本發明,藉由使用此種導電性膏,可獲得具有與ITO膜之密接性良好且導電性高之導電膜的附有導電膜之基材。Further, according to the present invention, by using such a conductive paste, a substrate having a conductive film having a conductive film having good adhesion to an ITO film and having high conductivity can be obtained.
以下,對本發明之實施形態進行說明。再者,本發明並不限定於以下說明而進行解釋。Hereinafter, embodiments of the present invention will be described. Furthermore, the invention is not limited by the following description.
本發明之實施形態之導電性膏係含有:(A)平均粒徑為10 nm~20 μm之銅粒子、(B)分子中至少含有1個一級胺基之高分子化合物(以下,有時稱為含有胺基之高分子化合物)之羧酸鹽、及(C)含有能夠與上述含有胺基之高分子化合物之一級胺基反應的酸性官能基之樹脂。以下,針對構成導電性膏之各成分詳細地說明。The conductive paste according to the embodiment of the present invention contains (A) a copper particle having an average particle diameter of 10 nm to 20 μm and (B) a polymer compound having at least one primary amine group in the molecule (hereinafter, sometimes referred to as The carboxylate of the polymer compound containing an amine group and (C) a resin containing an acidic functional group capable of reacting with a primary amine group of the above-mentioned amine group-containing polymer compound. Hereinafter, each component constituting the conductive paste will be described in detail.
(A)銅粒子為導電性膏之導電成分,使用平均粒徑為10 nm~20 μm之銅粒子。又,該(A)銅粒子較佳為表面氧量為0.5以下者。(A) The copper particles are conductive components of the conductive paste, and copper particles having an average particle diameter of 10 nm to 20 μm are used. Moreover, it is preferable that the (A) copper particles have a surface oxygen amount of 0.5 or less.
本發明中之「表面氧量」係以表面氧濃度(單位:原子%)相對於銅粒子之表面銅濃度(單位:原子%)之比例來表示。表面氧量較佳為0.3以下。再者,銅粒子之表面銅濃度及表面氧濃度係藉由X射線光電子光譜分析而求出。測定係對自粒子表面朝向中心直至約3 nm之深度之範圍進行。若對該範圍進行測定,則可充分地把握粒子表面之狀態。The "surface oxygen amount" in the present invention is expressed by the ratio of the surface oxygen concentration (unit: atom%) to the surface copper concentration (unit: atom%) of the copper particles. The surface oxygen amount is preferably 0.3 or less. Further, the surface copper concentration and the surface oxygen concentration of the copper particles were determined by X-ray photoelectron spectroscopy. The measurement is performed on a range from the surface of the particle toward the center up to a depth of about 3 nm. When the range is measured, the state of the particle surface can be sufficiently grasped.
又,該(A)銅粒子較佳為粒子整體之氧濃度為700 ppm以下。該氧濃度可使用氧濃度計進行測定。Further, the (A) copper particles preferably have an oxygen concentration of 700 ppm or less as a whole. This oxygen concentration can be measured using an oxygen concentration meter.
本發明中,藉由使用如此之(A)銅粒子,銅粒子間之接觸電阻變得更小,所得之導電膜之導電性提昇。In the present invention, by using such (A) copper particles, the contact resistance between the copper particles becomes smaller, and the conductivity of the obtained conductive film is improved.
作為銅粒子(A),只要為具有上述表面氧量之銅粒子,則可使用各種粒子。如下所述,銅粒子可為第一粒子亦可為第二粒子,進而亦可使用第一粒子與第二粒子複合而成之形態(於第一粒子之表面附著或結合有第二粒子之粒子等)。As the copper particles (A), various particles can be used as long as they are copper particles having the above surface oxygen amount. As described below, the copper particles may be the first particles or the second particles, and further may be formed by combining the first particles and the second particles (particles attached to or bonded to the surface of the first particles) Wait).
(A)銅粒子之平均粒徑較佳為10 nm~20 μm之範圍,根據銅粒子之形狀,於該範圍內適宜調整即可。銅粒子包含第一粒子之情形時之平均粒徑(平均一次粒徑)更佳為0.3~20 μm。又,銅粒子僅由第二粒子構成之情形時之平均粒徑(平均凝聚粒徑)較佳為0.01~1 μm,特佳為0.02~0.4 μm。若銅粒子之平均粒徑為上述下限值以上,則包含該銅粒子之導電膏之流動特性變得良好。又,若銅粒子之平均粒徑為上述上限值以下,則變得容易製作微細配線。The average particle diameter of the (A) copper particles is preferably in the range of 10 nm to 20 μm, and may be appropriately adjusted within the range depending on the shape of the copper particles. The average particle diameter (average primary particle diameter) of the case where the copper particles contain the first particles is more preferably 0.3 to 20 μm. Further, the average particle diameter (average aggregated particle diameter) when the copper particles are composed only of the second particles is preferably 0.01 to 1 μm, particularly preferably 0.02 to 0.4 μm. When the average particle diameter of the copper particles is at least the above lower limit value, the flow characteristics of the conductive paste containing the copper particles are good. In addition, when the average particle diameter of the copper particles is at most the above upper limit value, it becomes easy to produce fine wiring.
作為(A)銅粒子,較佳為使用例如以下所示之銅粒子(A1)~(A5)。As the (A) copper particles, for example, copper particles (A1) to (A5) shown below are preferably used.
(A1)銅粒子,其係第一粒子且其平均一次粒徑為0.3~20 μm。(A1) Copper particles which are first particles and have an average primary particle diameter of 0.3 to 20 μm.
(A2)銅複合粒子,其係於作為平均一次粒徑為0.3~20 μm之第一粒子的銅粒子之表面附著有作為平均凝聚粒徑為20~400 nm之第二粒子的氫化銅微粒子者。(A2) a copper composite particle which is attached to a surface of a copper particle which is a first particle having an average primary particle diameter of 0.3 to 20 μm, and a copper hydride particle which is a second particle having an average agglomerated particle diameter of 20 to 400 nm. .
(A3)氫化銅微粒子,其係第二粒子且其平均凝聚粒徑為10 nm~1 μm。(A3) Copper hydride fine particles which are second particles and have an average aggregated particle diameter of 10 nm to 1 μm.
(A4)銅複合粒子,其係於作為第一粒子且其平均一次粒徑為1~20 μm以上的銅粒子之表面附著有作為第二粒子且其平均凝聚粒徑為20~400 nm之銅微粒子者。(A4) copper composite particles which are attached to the surface of copper particles as the first particles and having an average primary particle diameter of 1 to 20 μm or more, and having copper as an average particle diameter of 20 to 400 nm Microparticles.
(A5)銅微粒子,其係第二粒子且其平均凝聚粒徑為10 nm~1 μm。(A5) Copper microparticles which are second particles and have an average agglomerated particle diameter of 10 nm to 1 μm.
氫化銅微粒子係藉由加熱而使氫化銅轉化為金屬銅,成為銅微粒子。即,銅粒子(A2)係藉由加熱而成為銅粒子(A4)。又,銅粒子(A3)係藉由加熱而成為銅粒子(A5)。The copper hydride fine particles are converted into metallic copper by heating to become copper fine particles. That is, the copper particles (A2) are heated to become copper particles (A4). Further, the copper particles (A3) are heated to form copper particles (A5).
本說明書中之平均粒徑可根據銅粒子之形狀以如下方式求出。針對一次粒子求平均一次粒徑時係藉由如下方式算出:對自掃描式電子顯微鏡(以下,記為「SEM」,Scanning Electron Microscope)像中隨機選取之100個粒子之Feret直徑進行測定,並計算該等之平均值。關於二次粒子係藉由如下方式算出:對自穿透式電子顯微鏡(以下,記為「TEM」,Transmission Electron Microscope)像中隨機選取之100個粒子之Feret直徑進行測定,並計算該等之平均值。The average particle diameter in the present specification can be determined in the following manner depending on the shape of the copper particles. The average primary particle diameter of the primary particles is calculated by measuring the Feret diameter of 100 particles randomly selected from a scanning electron microscope (hereinafter referred to as "SEM", Scanning Electron Microscope) image, and Calculate the average of these. The secondary particle system is calculated by measuring the Feret diameter of 100 particles randomly selected from the image of a transmission electron microscope (hereinafter referred to as "TEM", Transmission Electron Microscope), and calculating the same. average value.
又,如上述銅粒子(A2),於包含作為第一粒子之銅粒子、及附著於該銅粒子之作為第二粒子之氫化銅微粒子之情形時,藉由SEM觀察該所有粒子,測定亦包含第二粒子之Feret直徑。Further, when the copper particles (A2) contain copper particles as the first particles and copper hydride fine particles as the second particles attached to the copper particles, all the particles are observed by SEM, and the measurement also includes The Feret diameter of the second particle.
作為表面氧量為0.5以下之銅粒子,可較佳地使用對銅粒子表面進行還原處理而成之「表面改質銅粒子」、或於銅粒子表面之至少一部分上附著有銅微粒子之「複合金屬銅粒子」。As the copper particles having a surface oxygen amount of 0.5 or less, "surface-modified copper particles" obtained by subjecting the surface of copper particles to reduction treatment or "composite of copper particles attached to at least a part of the surface of copper particles" can be preferably used. Metallic copper particles."
本發明中之「表面改質銅粒子」係將銅粒子表面於pH值為3以下之分散媒中進行還原處理所得者,例如可藉由以下濕式還原法而製造:(1)將銅粒子分散於分散媒中而製成「銅分散液」之後,(2)將銅分散液之pH值調整為特定值以下,(3)於銅分散液中添加還原劑。以下對(1)~(3)之步驟進行說明。In the present invention, the "surface-modified copper particles" obtained by subjecting the surface of the copper particles to a reduction medium having a pH of 3 or less can be produced, for example, by the following wet reduction method: (1) Copper particles are used. After dispersing in a dispersion medium to form a "copper dispersion", (2) adjusting the pH of the copper dispersion to a specific value or less, and (3) adding a reducing agent to the copper dispersion. The steps of (1) to (3) will be described below.
分散於銅分散液中之銅粒子可使用作為導電性膏通常所使用之銅粒子,其粒子形狀可為球狀,亦可為板狀。As the copper particles dispersed in the copper dispersion, copper particles which are usually used as a conductive paste can be used, and the particle shape can be spherical or plate-shaped.
分散於銅分散液中之銅粒子之平均粒徑較佳為0.3~20 μm,更佳為1~10 μm。若銅粒子之平均粒徑未達0.3 μm,則有降低導電性膏之流動性之虞。另一方面,若銅粒子之平均粒徑超過20 μm,則利用所得之導電性膏製作微細配線變得困難。The average particle diameter of the copper particles dispersed in the copper dispersion is preferably from 0.3 to 20 μm, more preferably from 1 to 10 μm. If the average particle diameter of the copper particles is less than 0.3 μm, the fluidity of the conductive paste is lowered. On the other hand, when the average particle diameter of the copper particles exceeds 20 μm, it is difficult to produce fine wiring by using the obtained conductive paste.
銅分散液可藉由將上述銅粒子投入分散媒中而獲得。銅分散液中之銅粒子之濃度較佳為0.1~50質量%。若銅粒子之濃度未達0.1質量%,則銅分散液中所含之分散媒量變得過多,有無法將生產效率維持於足夠之水準之虞。另一方面,若銅粒子之濃度超過50質量%,則粒子彼此之凝聚之影響變得過大,有表面改質銅粒子之產率降低之虞。The copper dispersion can be obtained by introducing the above copper particles into a dispersion medium. The concentration of the copper particles in the copper dispersion is preferably from 0.1 to 50% by mass. When the concentration of the copper particles is less than 0.1% by mass, the amount of the dispersion medium contained in the copper dispersion liquid is too large, and the production efficiency cannot be maintained at a sufficient level. On the other hand, when the concentration of the copper particles exceeds 50% by mass, the influence of aggregation of the particles becomes excessive, and the yield of the surface-modified copper particles is lowered.
作為銅分散液之分散媒,只要為可使銅粒子分散者則無特別限定,可較佳地使用具有高極性者。作為高極性之分散媒,例如可使用:水;甲醇、乙醇、2-丙醇等醇類;乙二醇等二醇類;及混合該等而成之媒體,尤其是可較佳地使用水。The dispersion medium of the copper dispersion liquid is not particularly limited as long as it can disperse the copper particles, and those having high polarity can be preferably used. As the highly polar dispersion medium, for example, water; alcohols such as methanol, ethanol, and 2-propanol; glycols such as ethylene glycol; and media in which these are mixed, in particular, water can be preferably used. .
分散於分散媒中之銅粒子,從防止粒子表面之氧化之觀點而言,亦可為經表面處理劑對粒子表面進行表面處理者。作為表面處理劑,可使用硬脂酸、棕櫚酸、肉豆蔻酸等長鏈羧酸。The copper particles dispersed in the dispersion medium may be subjected to surface treatment of the surface of the particles by a surface treatment agent from the viewpoint of preventing oxidation of the surface of the particles. As the surface treatment agent, a long-chain carboxylic acid such as stearic acid, palmitic acid or myristic acid can be used.
再者,於使用長鏈羧酸作為表面處理劑之情形時,可將銅粒子直接供於還原處理,但為了使下述還原反應順利進行,較佳為於將長鏈羧酸(表面處理劑)自粒子表面去除之後分散於分散媒中。長鏈羧酸之去除可藉由利用酸之洗淨等方法而進行。Further, in the case where a long-chain carboxylic acid is used as the surface treatment agent, the copper particles may be directly supplied to the reduction treatment, but in order to smoothly carry out the reduction reaction described below, it is preferred to use a long-chain carboxylic acid (surface treatment agent). After being removed from the particle surface, it is dispersed in the dispersion medium. The removal of the long-chain carboxylic acid can be carried out by a method such as washing with an acid.
又,從提高銅粒子對分散媒之分散性之觀點而言,較佳為進行前處理。由於藉由進行前處理,使粒子表面親水性化,故可提高對水等高極性分散媒之分散性。Further, from the viewpoint of improving the dispersibility of the copper particles to the dispersion medium, it is preferred to carry out pretreatment. Since the surface of the particles is made hydrophilic by pretreatment, the dispersibility of the highly polar dispersion medium such as water can be improved.
作為前處理劑,例如可較佳地使用:碳數6以下之脂肪族單羧酸、脂肪族羥基單羧酸、脂肪族胺基酸等脂肪族單羧酸類、及脂肪族聚羧酸類(例如碳數10以下之脂肪族聚羧酸或脂肪族羥基聚羧酸)。更佳為碳數8以下之脂肪族聚羧酸類,具體而言可較佳地使用:甘胺酸、丙胺酸、檸檬酸、蘋果酸、順丁烯二酸、丙二酸等。As the pretreatment agent, for example, an aliphatic monocarboxylic acid having an aliphatic carbon number of 6 or less, an aliphatic monocarboxylic acid such as an aliphatic hydroxymonocarboxylic acid or an aliphatic amino acid, and an aliphatic polycarboxylic acid can be preferably used (for example). An aliphatic polycarboxylic acid or an aliphatic hydroxy polycarboxylic acid having a carbon number of 10 or less. More preferably, it is an aliphatic polycarboxylic acid having a carbon number of 8 or less, and specifically, glycine acid, alanine, citric acid, malic acid, maleic acid, malonic acid or the like can be preferably used.
較佳為於以上述方式所得之銅分散液中添加分散劑。作為分散劑,可使用對銅粒子具有吸附性之水溶性之各種化合物。作為分散劑,具體而言例如可使用:聚乙烯醇、聚丙烯酸、聚乙烯吡咯烷酮、羥基丙基纖維素、丙基纖維素、乙基纖維素等水溶性高分子化合物,或乙二胺四乙酸、亞胺基二乙酸等螯合化合物等。It is preferred to add a dispersing agent to the copper dispersion obtained in the above manner. As the dispersing agent, various compounds which are water-soluble to the copper particles can be used. As the dispersing agent, specifically, for example, a water-soluble polymer compound such as polyvinyl alcohol, polyacrylic acid, polyvinylpyrrolidone, hydroxypropylcellulose, propylcellulose or ethylcellulose, or ethylenediaminetetraacetic acid can be used. a chelate compound such as iminodiacetic acid or the like.
於上述處理後擔載於銅粒子上而存在之表面處理劑、前處理劑、分散劑之量,相對於銅粒子較佳為0.1~10質量%。The amount of the surface treatment agent, the pretreatment agent, and the dispersant present on the copper particles after the above treatment is preferably 0.1 to 10% by mass based on the copper particles.
利用前處理劑或分散劑所進行之銅粒子之處理可以如下方式進行:於將前處理劑等添加於水等溶劑中而成之溶液中,添加銅粒子並攪拌,於銅粒子表面擔載前處理劑等。The treatment of the copper particles by the pretreatment agent or the dispersing agent can be carried out by adding a pretreatment agent or the like to a solution obtained by using a solvent such as water, adding copper particles and stirring the mixture on the surface of the copper particles. Treatment agent, etc.
從提高處理速度之觀點而言,於進行前處理時較佳為一面加熱溶液一面進行。作為加熱溫度,較佳為於50℃以上且溶劑(水等)之沸點以下之溫度下進行。再者,於溶劑中添加羧酸等表面處理劑或分散劑之情形時,加熱溫度較佳為設為該等化合物之沸點以下。加熱處理之時間較佳為5分鐘以上且180分鐘以下。若加熱時間未達5分鐘,則有無法充分獲得提高處理速度之效果之虞。另一方面,若超過3小時進行加熱處理,則有成本變得過高之虞,就經濟性方面而言欠佳。From the viewpoint of increasing the processing speed, it is preferred to carry out the pretreatment, preferably while heating the solution. The heating temperature is preferably carried out at a temperature of 50 ° C or more and a boiling point of a solvent (water or the like) or less. When a surface treatment agent such as a carboxylic acid or a dispersant is added to the solvent, the heating temperature is preferably set to be equal to or lower than the boiling point of the compounds. The heat treatment time is preferably 5 minutes or longer and 180 minutes or shorter. If the heating time is less than 5 minutes, the effect of increasing the processing speed cannot be sufficiently obtained. On the other hand, if the heat treatment is performed for more than 3 hours, the cost becomes too high, which is not economically preferable.
再者,於進行前處理等時,從防止銅粒子表面之氧化之觀點而言,較佳為利用氮氣、氬氣等惰性氣體對處理容器內進行置換而實施。於前處理後,去除溶劑,並視需要以水等加以洗淨,藉此可獲得分散於分散液中之銅粒子。Further, in the pretreatment or the like, from the viewpoint of preventing oxidation of the surface of the copper particles, it is preferred to carry out the replacement of the inside of the processing container with an inert gas such as nitrogen or argon. After the pretreatment, the solvent is removed, and if necessary, washed with water or the like, whereby copper particles dispersed in the dispersion can be obtained.
pH值之調整可於銅分散液中添加pH調整劑而進行。作為pH調整劑,可使用酸,可較佳地使用例如:甲酸、檸檬酸、順丁烯二酸、丙二酸、乙酸、丙酸等羧酸;硫酸、硝酸、鹽酸等無機酸。作為羧酸,可利用與作為上述前處理劑所使用之羧酸同樣之化合物。The adjustment of the pH can be carried out by adding a pH adjuster to the copper dispersion. As the pH adjuster, an acid can be used, and for example, a carboxylic acid such as formic acid, citric acid, maleic acid, malonic acid, acetic acid or propionic acid; or an inorganic acid such as sulfuric acid, nitric acid or hydrochloric acid can be preferably used. As the carboxylic acid, the same compound as the carboxylic acid used as the pretreatment agent can be used.
該等之中,由於羧酸係藉由附著於銅粒子表面、殘存於還原處理後之表面改質銅粒子之表面並保護粒子表面,而抑制銅之氧化反應,故作為pH調整劑可較佳地使用。尤其是由於甲酸含有具有還原性之醛基(-CHO),故可藉由殘存於經表面改質之銅粒子表面,而抑制粒子表面之氧化之進行。藉由使用調配有如此之銅粒子之導電性膏,而難以形成氧化被膜,可形成體積電阻率之上升得到抑制之導電膜。再者,pH調整劑並不限定於酸成分,例如於分散液之pH值較低之情形時,亦可使用鹼作為pH調整劑。Among these, the carboxylic acid is preferably used as a pH adjuster by adhering to the surface of the copper particles and remaining on the surface of the surface-modified copper particles after the reduction treatment to protect the surface of the particles, thereby suppressing the oxidation reaction of copper. Use. In particular, since formic acid contains a reducing aldehyde group (-CHO), it is possible to suppress the progress of oxidation of the surface of the particles by remaining on the surface of the surface-modified copper particles. By using a conductive paste in which such copper particles are blended, it is difficult to form an oxide film, and a conductive film in which an increase in volume resistivity is suppressed can be formed. Further, the pH adjuster is not limited to the acid component. For example, when the pH of the dispersion is low, a base may be used as the pH adjuster.
藉由其後之還原處理步驟,順利地進行粒子表面之氧化膜之去除,從降低所得之表面改質銅粒子之表面氧濃度之觀點而言,較佳為使銅分散液之pH為3以下。若分散液之pH超過3,則無法充分地獲得去除形成於銅粒子表面之氧化膜之效果,有無法充分地降低銅粒子表面之氧濃度之虞。另一方面,較佳為使分散液之pH為0.5以上。若分散液之pH未達0.5,則銅離子過度地溶出,有銅粒子之表面改質變得難以順利進行之虞。分散液之pH更佳為0.5以上且2以下。再者,於分散液之pH為3以下之情形時,亦可無需添加pH調整劑進行pH值之調整,而直接對分散液進行還原處理。The oxide film on the surface of the particle is smoothly removed by the subsequent reduction treatment step, and from the viewpoint of lowering the surface oxygen concentration of the surface-modified copper particles obtained, the pH of the copper dispersion is preferably 3 or less. . When the pH of the dispersion exceeds 3, the effect of removing the oxide film formed on the surface of the copper particles cannot be sufficiently obtained, and the oxygen concentration on the surface of the copper particles cannot be sufficiently reduced. On the other hand, it is preferred to set the pH of the dispersion to 0.5 or more. When the pH of the dispersion is less than 0.5, the copper ions are excessively eluted, and the surface modification of the copper particles becomes difficult to proceed smoothly. The pH of the dispersion is more preferably 0.5 or more and 2 or less. Further, when the pH of the dispersion is 3 or less, the pH adjustment may be carried out without adding a pH adjuster, and the dispersion may be directly subjected to reduction treatment.
於pH值經調整之銅分散液中添加還原劑而進行還原處理。作為添加之還原劑,可使用選自金屬氫化物、次亞磷酸、次亞磷酸鈉等次亞磷酸鹽、二甲胺硼烷等胺硼烷、及甲酸中之至少1種。作為金屬氫化物,可列舉:氫化鋁鋰、硼氫化鋰、硼氫化鈉、氫化鋁、氫化鉀、及氫化鈣。該等之中可較佳地使用次亞磷酸、次亞磷酸鈉。再者,如上所述,由於甲酸亦作為pH調整劑使用,故於分散媒中添加甲酸之情形時,在作為還原劑發揮作用之同時亦作為pH調整劑而發揮作用。The reducing agent is added to the copper dispersion whose pH is adjusted to carry out a reduction treatment. As the reducing agent to be added, at least one selected from the group consisting of hypophosphites such as metal hydrides, hypophosphite, and sodium hypophosphite, amine borane such as dimethylamine borane, and formic acid can be used. Examples of the metal hydride include lithium aluminum hydride, lithium borohydride, sodium borohydride, aluminum hydride, potassium hydride, and calcium hydride. Among these, hypophosphorous acid and sodium hypophosphite can be preferably used. Further, as described above, since formic acid is also used as a pH adjuster, when formic acid is added to a dispersion medium, it functions as a reducing agent and also functions as a pH adjuster.
於銅分散液中添加之還原劑較佳為相對於粒子表面之銅原子量大量過剩地進行添加。具體而言,較佳為相對於分散液中所含之銅粒子之總莫耳數,添加以莫耳比計為1倍量以上之還原劑,特佳為相對於銅粒子之全部銅原子之莫耳數,使用以莫耳比計為1.2~10倍量之還原劑。若相對於銅之總莫耳數添加10倍以上之量之還原劑,則於成本方面不利,有生產成本變得過高之虞。又,有來自還原劑之分解產物之量變得過多,且其去除變得繁雜之虞。The reducing agent to be added to the copper dispersion is preferably added in a large excess amount with respect to the amount of copper atoms on the surface of the particles. Specifically, it is preferable to add a reducing agent in an amount of 1 time or more in terms of a molar ratio with respect to the total number of moles of copper particles contained in the dispersion liquid, particularly preferably all copper atoms with respect to the copper particles. Moir number, using a reducing agent in an amount of 1.2 to 10 times in terms of molar ratio. If a reducing agent is added in an amount of 10 times or more with respect to the total number of moles of copper, it is disadvantageous in terms of cost, and the production cost becomes too high. Further, the amount of decomposition products derived from the reducing agent becomes excessive, and the removal thereof becomes complicated.
還原反應較佳為將分散媒之溫度設為5~60℃而進行,更佳為設為35~50℃而進行。藉由將分散液之溫度設為60℃以下,可降低使分散媒自銅分散液蒸發、去除時之分散液整體之濃度變化之影響。The reduction reaction is preferably carried out by setting the temperature of the dispersion medium to 5 to 60 ° C, more preferably 35 to 50 ° C. By setting the temperature of the dispersion liquid to 60 ° C or lower, the influence of the concentration change of the entire dispersion liquid when the dispersion medium is evaporated and removed from the copper dispersion liquid can be reduced.
銅粒子之還原可以上述方式於銅分散液中添加還原劑而進行,或於添加有還原劑之分散媒中分散銅粒子而進行。The reduction of the copper particles can be carried out by adding a reducing agent to the copper dispersion as described above or by dispersing copper particles in a dispersion medium to which a reducing agent is added.
再者,從順利地進行銅粒子表面之氧化膜之去除之觀點而言,添加還原劑後之銅分散液之pH值較佳為自反應開始時刻直至反應結束時為止保持為3以下之狀態。In addition, from the viewpoint of smoothly removing the oxide film on the surface of the copper particles, the pH of the copper dispersion liquid after the addition of the reducing agent is preferably maintained at a state of 3 or less from the start of the reaction to the end of the reaction.
銅分散液之氧化還原電位可藉由還原劑之添加量或種類等而適當地調整。從順利地進行銅離子之還原反應之觀點而言,銅分散液之氧化還原電位相對於標準氫電極(SHE,Standard Hydrogen Elect)之電位較佳為100~300 mV,特佳為100~220 mV。再者,氧化還原電位可作為與標準電極之電位差而求出。本說明書中,氧化還原電位係以使用標準氫電極作為標準電極所測定之電位差進行標記。The oxidation-reduction potential of the copper dispersion can be appropriately adjusted by the amount or type of the reducing agent added. From the viewpoint of smoothly performing the reduction reaction of copper ions, the potential of the redox potential of the copper dispersion is preferably 100 to 300 mV with respect to a standard hydrogen electrode (SHE, Standard Hydrogen Elect), particularly preferably 100 to 220 mV. . Further, the oxidation-reduction potential can be obtained as a potential difference from the standard electrode. In the present specification, the oxidation-reduction potential is labeled with a potential difference measured using a standard hydrogen electrode as a standard electrode.
於還原劑之分解基本結束後,將經表面改質之銅粒子自分散液分離,視需要以水等加以洗淨、乾燥,可獲得表面氧量為0.5以下之表面改質銅粒子,即作為(A)成分之銅粒子。(A)銅粒子之表面氧濃度可藉由於上述(1)~(3)之步驟中,例如銅分散液之pH值之調整或銅分散液之氧化還原電位之調整,而調整為所需之範圍。After the decomposition of the reducing agent is substantially completed, the surface-modified copper particles are separated from the dispersion, washed with water or the like as needed, and surface-modified copper particles having a surface oxygen content of 0.5 or less can be obtained. Copper particles of the component (A). (A) The surface oxygen concentration of the copper particles can be adjusted to be required by the adjustment of the pH of the copper dispersion or the adjustment of the redox potential of the copper dispersion in the steps (1) to (3) above. range.
又,由於藉由進行上述(1)~(3)之表面處理,可將存在於作為起始原料之銅粒子表面之氧化銅(Cu2 O、CuO)還原為銅原子,故可降低成為阻礙導電性之主要原因之氧化銅之存在量。In addition, by performing the surface treatment of the above (1) to (3), copper oxide (Cu 2 O, CuO) existing on the surface of the copper particles as a starting material can be reduced to copper atoms, so that it can be reduced as a hindrance. The amount of copper oxide present, which is the main cause of electrical conductivity.
再者,由於還原劑分解物等副產物通常係可溶於分散媒之成分,故可藉由進行過濾或離心分離而自表面改質銅粒子分離。Further, since by-products such as a reducing agent decomposition product are usually soluble in the component of the dispersion medium, they can be separated from the surface-modified copper particles by filtration or centrifugation.
又,於上述(1)~(3)之表面處理後之銅粒子表面,存在由於還原劑而使銅原子之一部分還原,生成氫化銅之情況。因此,表面處理後之銅粒子自分散液分離後,亦可藉由於40~120℃下進行加熱處理,而使氫化銅變化為銅。Further, on the surface of the copper particles after the surface treatment of the above (1) to (3), a part of the copper atoms is reduced by the reducing agent to form copper hydride. Therefore, after the surface-treated copper particles are separated from the dispersion, the copper hydride can be changed to copper by heat treatment at 40 to 120 °C.
本發明中之「複合金屬銅粒子」係使金屬銅微粒子附著於金屬銅粒子表面之至少一部分而成者,係對使氫化銅微粒子附著於金屬銅粒子表面而成之「銅複合粒子」進行加熱,而使氫化銅微粒子轉化為金屬銅微粒子所得者。再者,金屬銅粒子表面是否附著有微粒子,可觀察SEM像進行確認。又,附著於金屬銅粒子之表面之氫化銅微粒子之鑑定可使用X射線繞射裝置(Rigaku公司製造,TTR-111)進行。In the present invention, the "composite metal copper particles" are obtained by adhering metallic copper fine particles to at least a part of the surface of the metallic copper particles, and heating the "copper composite particles" obtained by adhering the copper hydride fine particles to the surface of the metallic copper particles. And the copper hydride microparticles are converted into metal copper microparticles. Further, whether or not fine particles were adhered to the surface of the metallic copper particles was observed by observing the SEM image. Further, the identification of the copper hydride fine particles adhering to the surface of the metal copper particles can be carried out using an X-ray diffraction apparatus (manufactured by Rigaku Corporation, TTR-111).
作為銅複合粒子中之金屬銅粒子,可使用導電性膏中通常所使用之公知之銅粒子,其粒子形狀可為球狀,亦可為板狀。並且,該金屬銅粒子之平均粒徑較佳為0.3~20 μm,更佳為1~10 μm。若金屬銅粒子之平均粒徑未達0.3 μm,則有於製成導電性膏時無法獲得充分之流動特性之虞。另一方面,若金屬銅粒子之平均粒徑超過20 μm,則有利用所得之導電性膏製作微細配線變得困難之虞。再者,金屬銅粒子之平均粒徑如上所述,係對自TEM像或SEM像中隨機選取之100個金屬銅粒子之Feret直徑進行測定,並計算該測定值之平均值而算出。As the metal copper particles in the copper composite particles, known copper particles which are generally used in the conductive paste can be used, and the particle shape can be spherical or plate-like. Further, the average particle diameter of the metallic copper particles is preferably from 0.3 to 20 μm, more preferably from 1 to 10 μm. When the average particle diameter of the metallic copper particles is less than 0.3 μm, sufficient flow characteristics cannot be obtained when the conductive paste is formed. On the other hand, when the average particle diameter of the metallic copper particles exceeds 20 μm, it is difficult to produce fine wiring by using the obtained conductive paste. In addition, as described above, the average particle diameter of the metallic copper particles is measured by measuring the Feret diameter of 100 metal copper particles randomly selected from the TEM image or the SEM image, and calculating the average value of the measured values.
銅複合粒子中之氫化銅微粒子主要係作為1~20 nm左右之一次粒子凝聚而成之二次粒子而存在,其粒子形狀可為球狀,亦可為板狀。氫化銅微粒子之平均粒徑較佳為20~400 nm,更佳為30~300 nm,進而較佳為50~200 nm。特佳為80~150 nm。若氫化銅微粒子之平均粒徑未達20 nm,則變得容易產生氫化銅微粒子之熔接、成長,於形成導電膜時,有產生伴隨體積收縮之龜裂等不良情況之虞。另一方面,若氫化銅微粒子之平均粒徑超過400 nm,則粒子表面積不充分,變得難以產生表面熔融現象,且難以形成緻密之導電膜。氫化銅微粒子之平均粒徑如上所述,係對自TEM像或SEM像中隨機選取之100個氫化銅微粒子之粒徑進行測定,並計算該等測定值之平均值而算出。The copper hydride fine particles in the copper composite particles are mainly present as secondary particles in which primary particles of about 1 to 20 nm are aggregated, and the particle shape may be spherical or plate-shaped. The average particle diameter of the copper hydride fine particles is preferably from 20 to 400 nm, more preferably from 30 to 300 nm, and still more preferably from 50 to 200 nm. Particularly good is 80~150 nm. When the average particle diameter of the copper hydride fine particles is less than 20 nm, the copper hydride fine particles are likely to be welded and grown, and when the conductive film is formed, defects such as cracks accompanying volume shrinkage may occur. On the other hand, when the average particle diameter of the copper hydride fine particles exceeds 400 nm, the surface area of the particles is insufficient, and it is difficult to cause surface melting, and it is difficult to form a dense conductive film. The average particle diameter of the copper hydride fine particles is measured by measuring the particle diameters of 100 hydrogenated copper fine particles randomly selected from the TEM image or the SEM image, and calculating the average value of the measured values.
附著於金屬銅粒子表面之氫化銅微粒子之量較佳為金屬銅粒子之量的5~50質量%,更佳為10~35質量%。若氫化銅微粒子之量未達金屬銅粒子之量之5質量%,則金屬銅粒子間未充分地形成導電通道,有無法充分地獲得降低導電膜之體積電阻率之效果之虞。另一方面,若氫化銅微粒子之量超過金屬銅粒子之量之50質量%,則作為導電性膏難以確保充分之流動性。再者,附著於金屬銅粒子之表面之氫化銅微粒子之量,例如可根據添加還原劑之前之水溶性銅化合物溶液中之銅離子濃度、與氫化銅微粒子生成結束後之反應液中殘存之銅離子濃度之差而算出。The amount of the copper hydride fine particles adhering to the surface of the metal copper particles is preferably from 5 to 50% by mass, more preferably from 10 to 35% by mass, based on the amount of the metal copper particles. When the amount of the copper hydride fine particles is less than 5% by mass of the amount of the metal copper particles, the conductive channels are not sufficiently formed between the metal copper particles, and the effect of lowering the volume resistivity of the conductive film cannot be sufficiently obtained. On the other hand, when the amount of the copper hydride fine particles exceeds 50% by mass of the amount of the metal copper particles, it is difficult to ensure sufficient fluidity as the conductive paste. Further, the amount of the copper hydride fine particles adhering to the surface of the metal copper particles can be, for example, the copper ion concentration in the water-soluble copper compound solution before the addition of the reducing agent, and the copper remaining in the reaction liquid after the formation of the copper hydride fine particles is completed. Calculated by the difference in ion concentration.
銅複合粒子例如可藉由如下濕式還原法製造:(i)於反應系R中形成氫化銅微粒子後;(ii)於反應系R中投入金屬銅粒子,使氫化銅微粒子附著於金屬銅粒子表面而形成「銅複合粒子」;(iii)將「銅複合粒子」自反應系R分離。並且,可藉由加熱該銅複合粒子,使氫化銅微粒子轉化為金屬銅微粒子,而獲得「複合金屬銅粒子」。The copper composite particles can be produced, for example, by the following wet reduction method: (i) after the copper hydride fine particles are formed in the reaction system R; (ii) the metal copper particles are introduced into the reaction system R, and the copper hydride fine particles are attached to the metal copper particles. "Copper composite particles" are formed on the surface; (iii) "Copper composite particles" are separated from the reaction system R. Further, by heating the copper composite particles, the copper hydride fine particles can be converted into metal copper fine particles to obtain "composite metal copper particles".
再者,本說明書中,所謂「反應系R」,係指生成氫化銅微粒子之系。反應系R不僅包含(I)於水溶性銅化合物溶液中加入有還原劑之未反應狀態下之系,亦包含(II)藉由水溶性銅化合物與還原劑之反應而正在生成氫化銅微粒子之狀態下之系,(III)生成氫化銅微粒子之反應結束,生成後之氫化銅粒子分散之狀態下之系;係指於水等溶劑中,除水溶性銅化合物、銅離子、各種陰離子以外,於生成氫化銅微粒子之後,存在殘留於溶劑中之各種離子、其他殘渣、還原劑或其分解物等者。因此,將生成後之氫化銅微粒子自溶液中單獨分離,並使其重新分散於分散媒中所得之分散液不符合本說明書中之反應系R。以下針對(i)~(iii)之各步驟進一步說明。In the present specification, the term "reaction system R" means a system for producing copper hydride fine particles. The reaction system R contains not only (I) a system in which an unreacted state of a water-soluble copper compound solution is added with a reducing agent, but also (II) a copper hydride microparticle is being formed by a reaction of a water-soluble copper compound and a reducing agent. In the state of the system, (III) the reaction in which the copper hydride microparticles are formed is completed, and the hydrogen hydride copper particles after the formation is dispersed; in the solvent such as water, in addition to the water-soluble copper compound, copper ions, and various anions, After the copper hydride fine particles are formed, various ions, other residues, a reducing agent, or a decomposition product thereof remaining in the solvent are present. Therefore, the resulting copper hydride microparticles are separately separated from the solution and redispersed in the dispersion medium to obtain a dispersion which does not conform to the reaction system R in the present specification. The steps of (i) to (iii) are further described below.
反應系R可藉由在將水溶性銅化合物添加於溶劑中所形成之水溶性銅化合物溶液中至少添加還原劑而形成。The reaction system R can be formed by adding at least a reducing agent to a water-soluble copper compound solution formed by adding a water-soluble copper compound to a solvent.
作為形成反應系R之水溶性之銅化合物,較佳為銅鹽。作為銅鹽,較佳為銅(II)離子與無機酸或羧酸之鹽。作為上述羧酸,較佳為亦包括羧基之碳原子在內碳數為1~4之羧酸,特佳為甲酸、乙酸、或丙酸。作為水溶性之銅化合物,較佳為硫酸銅、硝酸銅、甲酸銅、乙酸銅、氯化銅、溴化銅、碘化銅等。As the water-soluble copper compound forming the reaction system R, a copper salt is preferred. As the copper salt, a salt of a copper (II) ion and an inorganic acid or a carboxylic acid is preferred. The carboxylic acid preferably includes a carboxylic acid having a carbon atom of a carboxyl group of 1 to 4, particularly preferably formic acid, acetic acid or propionic acid. The water-soluble copper compound is preferably copper sulfate, copper nitrate, copper formate, copper acetate, copper chloride, copper bromide or copper iodide.
再者,作為上述水溶性銅化合物溶液之溶劑,並不限定於可溶解水溶性銅化合物者,尤其是可較佳地使用水。Further, the solvent of the water-soluble copper compound solution is not limited to those capable of dissolving a water-soluble copper compound, and in particular, water can be preferably used.
水溶性銅化合物溶液中所含之水溶性銅化合物之濃度較佳為0.1~30質量%。若水溶性銅化合物之濃度未達0.1質量%,則溶液中之水分量變得過多,有氫化銅微粒子之生產效率降低之虞。另一方面,若水溶性銅化合物之濃度超過30質量%,則有氫化銅微粒子之產率反而降低之虞。The concentration of the water-soluble copper compound contained in the water-soluble copper compound solution is preferably from 0.1 to 30% by mass. When the concentration of the water-soluble copper compound is less than 0.1% by mass, the amount of water in the solution becomes excessive, and the production efficiency of the copper hydride fine particles is lowered. On the other hand, when the concentration of the water-soluble copper compound exceeds 30% by mass, the yield of the copper hydride fine particles is rather lowered.
添加有還原劑之水溶性銅化合物溶液較佳為將pH值調整為特定值以下。作為水溶性銅化合物溶液之pH調整劑,可使用於表面改質銅粒子之製造步驟中,與作為銅分散液之pH調整劑所列舉之酸成分相同者。具體而言例如可使用:甲酸、檸檬酸、順丁烯二酸、丙二酸、乙酸、丙酸、硫酸、硝酸、鹽酸等。The water-soluble copper compound solution to which the reducing agent is added is preferably adjusted to have a pH value below a specific value. The pH adjuster for the water-soluble copper compound solution can be used in the production step of the surface-modified copper particles in the same manner as the acid component exemplified as the pH adjuster for the copper dispersion. Specifically, for example, formic acid, citric acid, maleic acid, malonic acid, acetic acid, propionic acid, sulfuric acid, nitric acid, hydrochloric acid or the like can be used.
該等之中,作為水溶性銅化合物溶液之pH調整劑,可特佳地使用甲酸。甲酸由於含有具有還原性之醛基(-CHO),故可藉由殘存於粒子表面,而抑制銅微粒子之氧化。Among these, formic acid can be particularly preferably used as the pH adjuster of the water-soluble copper compound solution. Since formic acid contains a reducing aldehyde group (-CHO), it can suppress oxidation of copper fine particles by remaining on the surface of the particle.
水溶性銅化合物溶液之pH值較佳為設為3以下。藉由使水溶性銅化合物溶液之pH值為3以下,可提高氫化銅微粒子之生成效率。推測其原因在於:可在銅離子及氫離子混雜於溶液中之狀態下進行還原處理。若水溶性銅化合物溶液之pH值超過3,則存在容易生成金屬銅微粒子,氫化銅微粒子之生成率降低之情形。從提高氫化銅微粒子之生成率之觀點而言,水溶性銅化合物溶液之pH值更佳為設為0.5~2。The pH of the water-soluble copper compound solution is preferably set to 3 or less. By setting the pH of the water-soluble copper compound solution to 3 or less, the production efficiency of the copper hydride fine particles can be improved. The reason is presumed to be that the reduction treatment can be carried out in a state where copper ions and hydrogen ions are mixed in the solution. When the pH of the water-soluble copper compound solution exceeds 3, the metal copper fine particles are likely to be formed, and the formation ratio of the copper hydride fine particles is lowered. The pH of the water-soluble copper compound solution is more preferably set to 0.5 to 2 from the viewpoint of increasing the production rate of the copper hydride fine particles.
作為還原劑,可使用選自金屬氫化物、次亞磷酸、次亞磷酸鈉等次亞磷酸鹽、二甲胺硼烷等胺硼烷、及甲酸中之至少1種。作為金屬氫化物,可列舉:氫化鋁鋰、硼氫化鋰、硼氫化鈉、氫化鋁、氫化鉀、及氫化鈣。該等之中可較佳地使用次亞磷酸、次亞磷酸鈉。再者,如上所述,由於甲酸亦作為pH調整劑使用,故於分散媒中添加甲酸之情形時,在作為還原劑發揮作用之同時作為pH調整劑而發揮作用。As the reducing agent, at least one selected from the group consisting of a hypophosphite such as a metal hydride, hypophosphorous acid, and sodium hypophosphite, an amine borane such as dimethylamine borane, and formic acid can be used. Examples of the metal hydride include lithium aluminum hydride, lithium borohydride, sodium borohydride, aluminum hydride, potassium hydride, and calcium hydride. Among these, hypophosphorous acid and sodium hypophosphite can be preferably used. In addition, since formic acid is also used as a pH adjuster as described above, when formic acid is added to the dispersion medium, it functions as a reducing agent and functions as a pH adjuster.
水溶性銅化合物溶液之還原劑相對於溶液中之銅離子較佳為添加1.2~10倍之當量數。若添加於水溶性銅化合物溶液中之還原劑之量相對於銅離子之量未達1.2倍之當量數,則難以獲得充分之還原作用。另一方面,若還原劑之添加量相對於銅離子之量超過10倍之當量數,則存在使氫化銅微粒子中之鈉、硼、磷等雜質之含量增大之情形。The reducing agent of the water-soluble copper compound solution is preferably added in an amount of 1.2 to 10 times the equivalent amount of the copper ion in the solution. If the amount of the reducing agent added to the water-soluble copper compound solution is less than 1.2 times the equivalent amount of the copper ion, it is difficult to obtain a sufficient reduction effect. On the other hand, when the amount of the reducing agent added exceeds 10 times the equivalent amount of the copper ion, the content of impurities such as sodium, boron, and phosphorus in the copper hydride fine particles may increase.
反應系R可藉由將混合上述還原劑及水等溶劑而成之還原劑溶液與水溶性銅化合物溶液混合而形成,亦可由將固體狀態之還原劑添加於水溶性銅化合物溶液中而形成。如此形成之反應系R中,在酸性條件下,銅離子因還原劑而還原,生成氫化銅微粒子,並使晶粒成長。The reaction system R may be formed by mixing a reducing agent solution obtained by mixing a solvent such as the reducing agent and water with a water-soluble copper compound solution, or may be formed by adding a reducing agent in a solid state to a water-soluble copper compound solution. In the reaction system R thus formed, under acidic conditions, copper ions are reduced by a reducing agent to form copper hydride fine particles, and the crystal grains are grown.
於上述(i)中形成之反應系R中投入金屬銅粒子,使氫化銅微粒子附著於該金屬銅粒子表面而形成「銅複合粒子」。再者,反應系R中所投入之金屬銅粒子之形狀、粒徑如上所述。The metal copper particles are introduced into the reaction system R formed in the above (i), and the copper hydride fine particles are attached to the surface of the metal copper particles to form "copper composite particles". Further, the shape and particle diameter of the metal copper particles charged in the reaction system R are as described above.
金屬銅粒子較佳為添加於存在有銅離子之階段之反應系R、或水溶性銅化合物溶液中。藉由於存在有銅離子之反應系R中加入金屬銅粒子,由於在金屬銅粒子與氫化銅微粒子共存之環境下,會進行銅離子之還原反應,故可於金屬銅粒子與氫化銅微粒子間形成牢固之結合狀態。再者,反應系R中是否存在銅離子可藉由使用銅離子電極或可見光吸收光譜之銅離子之濃度測定而確認,又亦可藉由水溶液之氧化還原電位之測定而確認。The metal copper particles are preferably added to the reaction system R in the stage in which copper ions are present or the water-soluble copper compound solution. By adding metallic copper particles to the reaction system R in which copper ions are present, since the reduction reaction of copper ions occurs in the environment in which the metallic copper particles and the copper hydride fine particles coexist, the copper copper particles and the copper hydride fine particles can be formed. A firm combination. Further, whether or not copper ions are present in the reaction system R can be confirmed by measurement using a copper ion electrode or a concentration of copper ions in a visible light absorption spectrum, or can be confirmed by measurement of an oxidation-reduction potential of an aqueous solution.
即,金屬銅粒子較佳為添加於生產氫化銅微粒子之過程中之反應系R中,或於添加還原劑之前之水溶性銅化合物溶液中添加金屬銅粒子,並於其後添加還原劑而形成反應系R。較佳為於生成氫化銅微粒子之過程中之反應系R中添加金屬銅粒子即可。That is, the metal copper particles are preferably added to the reaction system R in the process of producing the copper hydride fine particles, or the metal copper particles are added to the water-soluble copper compound solution before the addition of the reducing agent, and then a reducing agent is added thereto. Reaction system R. It is preferred to add metal copper particles to the reaction system R in the process of producing copper hydride fine particles.
再者,添加金屬銅粒子之反應系R並不限定於上述狀態者,例如,反應系R中之銅離子量或還原劑量由於還原反應之進行而減少,亦可於氫化銅微粒子之生成、或生成後之氫化銅微粒子之成長停止之狀態之反應系R中添加金屬銅粒子。即,金屬銅粒子可投入到生成氫化銅微粒子前之反應系R中,亦可投入到生成氫化銅微粒子過程中之反應系R中,又亦可投入到生成氫化銅微粒子後之反應系R中。Further, the reaction system R to which the metal copper particles are added is not limited to the above state. For example, the amount of copper ions or the amount of reduction in the reaction system R may be reduced by the progress of the reduction reaction, or may be formed by the copper hydride fine particles or Metal copper particles are added to the reaction system R in a state in which the growth of the hydrogenated copper microparticles after the formation is stopped. In other words, the metal copper particles may be introduced into the reaction system R before the formation of the copper hydride fine particles, or may be introduced into the reaction system R in the process of generating the copper hydride fine particles, or may be introduced into the reaction system R after the formation of the copper hydride fine particles. .
藉由於反應系R中投入金屬銅粒子,可於該金屬銅粒子表面附著氫化銅微粒子,而於反應系R中形成「銅複合粒子」。添加有金屬銅粒子之反應系R中所含之銅離子之存在量相對於添加還原劑前之水溶性銅化合物溶液之銅離子之存在量,較佳為1~100質量%,更佳為5~100質量%。再者,水溶性銅化合物溶液中之銅係設為全部離子化者。By adding metallic copper particles to the reaction system R, hydrogenated copper fine particles can be attached to the surface of the metallic copper particles, and "copper composite particles" can be formed in the reaction system R. The amount of the copper ion contained in the reaction system R to which the metal copper particles are added is preferably from 1 to 100% by mass, more preferably from 5 to 100% by mass based on the amount of the copper ion of the water-soluble copper compound solution before the addition of the reducing agent. ~100% by mass. Further, the copper in the water-soluble copper compound solution is all ionized.
反應系R之溫度較佳為60℃以下。藉由使反應系R之溫度為60℃以下,可抑制反應系R中之氫化銅微粒子之分解。The temperature of the reaction system R is preferably 60 ° C or lower. By setting the temperature of the reaction system R to 60 ° C or lower, the decomposition of the copper hydride fine particles in the reaction system R can be suppressed.
金屬銅粒子較佳為在反應系R之氧化還原電位於100~300 mVSHE之範圍內之狀態下添加。再者,如上所述,「SHE」係指標準氫電極,「mVSHE」表示以標準氫電極為基準而測定之氧化還原電位。本說明書中,氧化還原電位之測定值係以標準氫電極為基準而測定者。The metal copper particles are preferably added in a state where the redox charge of the reaction system R is in the range of 100 to 300 mVSHE. Further, as described above, "SHE" means a standard hydrogen electrode, and "mVSHE" means an oxidation-reduction potential measured based on a standard hydrogen electrode. In the present specification, the measured value of the oxidation-reduction potential is measured based on a standard hydrogen electrode.
將於反應系R中形成之銅複合粒子自該反應系R分離。作為將銅複合粒子自反應系R分離之方法,無特別限定,例如可藉由離心分離、過濾等方法,自反應系R分離粉末狀之銅複合粒子。The copper composite particles formed in the reaction system R are separated from the reaction system R. The method of separating the copper composite particles from the reaction system R is not particularly limited. For example, the powdery copper composite particles can be separated from the reaction system R by a method such as centrifugation or filtration.
自反應系分離後,對附著於粒子表面之溶解性雜質進行以水等洗淨液去除等洗淨、並純化,藉此可獲得粉末狀之銅複合粒子。再者,於進行銅複合粒子之分離前,對反應系R之溶劑進行置換,亦可與溶劑一同將雜質(還原劑之分解物等)去除。After the separation from the reaction system, the soluble impurities adhering to the surface of the particles are washed and purified by removing the washing liquid such as water, and the powdery copper composite particles can be obtained. Further, the solvent of the reaction system R may be replaced before the separation of the copper composite particles, and the impurities (decomposed products of the reducing agent, etc.) may be removed together with the solvent.
藉由對自反應系R分離之銅複合粒子進行加熱處理,將氫化銅微粒子轉化為金屬銅微粒子,可獲得表面氧量為0.5以下之「複合金屬銅粒子」。By heat-treating the copper composite particles separated from the reaction system R, the copper hydride fine particles are converted into metal copper fine particles, and "composite metal copper particles" having a surface oxygen amount of 0.5 or less can be obtained.
複合金屬銅粒子由於可利用存在於金屬銅粒子間之金屬銅微粒子而確實地形成導電通道,故可降低製成導電膜時之體積電阻率。又,若金屬銅微粒子游離於導電性膏中,則有導致導電性膏之黏度上升之情形,如上所述,由於藉由將氫化銅微粒子轉化為金屬銅微粒子,可使金屬銅微粒子難以自金屬銅粒子剝離,故可製成黏度上升受到抑制之導電性膏。Since the composite metal copper particles can form a conductive path reliably by using the metal copper fine particles existing between the metal copper particles, the volume resistivity at the time of forming the conductive film can be reduced. Further, when the metallic copper fine particles are free from the conductive paste, the viscosity of the conductive paste is increased. As described above, since the copper hydride fine particles are converted into the metallic copper fine particles, the metallic copper fine particles are difficult to be made from the metal. Since the copper particles are peeled off, it is possible to obtain a conductive paste in which the increase in viscosity is suppressed.
銅複合粒子之加熱處理較佳為於60~120℃之溫度下進行。若加熱溫度超過120℃,則容易產生金屬銅微粒子彼此之熔接,有製成導電膜時之體積電阻率變高之虞。另一方面,若加熱溫度未達60℃,則加熱處理所需之時間變長,就製造成本方面而言欠佳。銅複合粒子之加熱處理更佳為於60~100℃下進行,進而較佳為於60~90℃下進行。再者,加熱處理後所得之複合金屬銅粒子之殘存水分量較佳為3質量%以下,更佳為1.5質量%以下。The heat treatment of the copper composite particles is preferably carried out at a temperature of from 60 to 120 °C. When the heating temperature exceeds 120 ° C, the metal copper fine particles are likely to be welded to each other, and the volume resistivity when the conductive film is formed becomes high. On the other hand, if the heating temperature is less than 60 ° C, the time required for the heat treatment becomes long, which is not preferable in terms of manufacturing cost. The heat treatment of the copper composite particles is more preferably carried out at 60 to 100 ° C, and more preferably at 60 to 90 ° C. In addition, the residual moisture content of the composite metal copper particles obtained after the heat treatment is preferably 3% by mass or less, and more preferably 1.5% by mass or less.
銅複合粒子之加熱處理較佳為於-101~-50 kPa之減壓下進行。若於大於-50 kPa之壓力下進行加熱處理,則乾燥所需之時間變長,就製造成本方面而言欠佳。另一方面,若使加熱處理時之壓力為未達-101 kPa,則必須於多餘之溶劑(例如水等)之去除、乾燥中使用大型裝置,反而製造成本變高。The heat treatment of the copper composite particles is preferably carried out under a reduced pressure of -101 to -50 kPa. If the heat treatment is carried out at a pressure of more than -50 kPa, the time required for drying becomes long, which is not preferable in terms of production cost. On the other hand, when the pressure at the time of heat treatment is less than -101 kPa, it is necessary to use a large-sized apparatus for removal and drying of an excess solvent (for example, water), and the manufacturing cost becomes high.
「複合金屬銅粒子」之表面氧濃度可藉由於上述(i)~(iii)之步驟中,調整水溶性銅化合物溶液之pH值、反應系R之氧化還原電位、或反應系R之溫度等、或者調整銅複合粒子之加熱處理時之氧分壓,而調整至所需之範圍內。The surface oxygen concentration of the "composite metal copper particles" can be adjusted by adjusting the pH of the water-soluble copper compound solution, the oxidation-reduction potential of the reaction system R, or the temperature of the reaction system R by the steps (i) to (iii) above. Or adjusting the partial pressure of oxygen during the heat treatment of the copper composite particles, and adjusting to the desired range.
作為其他(A)銅粒子,使用作為上述銅粒子(A3)之平均凝聚粒徑為10 nm~1 μm之氫化銅微粒子亦較佳。該粒子可藉由於上述水溶性銅化合物之溶液中,在pH為3以下、氧化還原電位為100~300 mVSHE(較佳為100~220 mVSHE)之條件下添加還原劑而獲得。該還原劑可使用與上述還原劑相同者,較佳之態樣亦相同。再者,該氫化銅微粒子之平均凝聚粒徑可藉由控制反應溫度或反應時間、添加分散劑而進行調整。As the other (A) copper particles, it is also preferred to use hydrogenated copper fine particles having an average agglomerated particle diameter of 10 nm to 1 μm as the copper particles (A3). The particles can be obtained by adding a reducing agent to a solution of the water-soluble copper compound at a pH of 3 or less and an oxidation-reduction potential of 100 to 300 mVSHE (preferably 100 to 220 mVSHE). The reducing agent may be the same as the reducing agent described above, and preferably the same. Further, the average agglomerated particle diameter of the copper hydride fine particles can be adjusted by controlling the reaction temperature or the reaction time and adding a dispersing agent.
又,作為獲得表面氧量為0.5以下之銅粒子(A)之方法,並不限定於如上所述之利用濕式還原之方法,例如亦可藉由如下方式進行:使用鹽酸、硫酸、硝酸等酸,將形成於銅粒子之表面之氧化膜洗淨,溶解、去除氧化膜。Moreover, the method of obtaining the copper particles (A) having a surface oxygen amount of 0.5 or less is not limited to the method of wet reduction as described above, and for example, it may be carried out by using hydrochloric acid, sulfuric acid, nitric acid, or the like. The acid is washed with an oxide film formed on the surface of the copper particles to dissolve and remove the oxide film.
又,作為獲得表面氧量為0.5以下之銅粒子(A)之方法,除上述方法以外,例如亦可藉由對銅粒子之表面導入還原性之氣體,並於該氣體中對銅粒子進行加熱處理等而實施。具體而言,例如藉由導入氫氣、一氧化碳、天然氣、氨分解氣體等還原性氣體,或使內部成為真空,而使還原爐內成為還原性環境,並於該還原爐內放入銅粒子,於120~400℃之溫度範圍內對銅粒子進行還原處理,藉此可去除粒子表面之氧化物。Further, as a method of obtaining the copper particles (A) having a surface oxygen amount of 0.5 or less, in addition to the above method, for example, a reducing gas may be introduced into the surface of the copper particles, and the copper particles may be heated in the gas. Implemented by processing, etc. Specifically, for example, by introducing a reducing gas such as hydrogen, carbon monoxide, natural gas, or ammonia decomposition gas, or by making the inside a vacuum, the inside of the reduction furnace is brought into a reducing atmosphere, and copper particles are placed in the reduction furnace. The copper particles are reduced in a temperature range of 120 to 400 ° C, thereby removing oxides on the surface of the particles.
又,作為使用還原性氣體之其他方法,亦可藉由於惰性氣體與還原性氣體之混合氣體中產生電漿,對銅粒子表面進行電漿處理之方法,而對銅粒子表面進行還原處理。Further, as another method using a reducing gas, the surface of the copper particles may be subjected to a reduction treatment by a plasma treatment of the surface of the copper particles by generating a plasma in a mixed gas of an inert gas and a reducing gas.
構成本發明之(B)成分之含有胺基之高分子化合物係於分子中至少含有1個、較佳為複數個一級胺基,且質量平均分子量Mw為300~20000之高分子量之胺。含有胺基之高分子化合物之質量平均分子量(Mw)較佳為600~10000之範圍,進而較佳為600~2000,特佳為600~1600。The amine group-containing polymer compound constituting the component (B) of the present invention is a high molecular weight amine having at least one, preferably a plurality of primary amine groups in the molecule and having a mass average molecular weight Mw of from 300 to 20,000. The mass average molecular weight (Mw) of the amine group-containing polymer compound is preferably in the range of 600 to 10,000, more preferably 600 to 2,000, and particularly preferably 600 to 1600.
該含有胺基之高分子化合物宜含有至少1個、較佳為複數個一級胺基,並且含有二級胺基及/或三級胺基;胺值(依據JIS K7237之規定)較佳為700~1500 mgKOH/g,特佳為850~1200 mgKOH/g。含有胺基之高分子化合物可為具有直鏈狀主鏈之化合物,亦可為具有分支結構之化合物。其中,較佳為具有分支結構之高分子胺。作為含有胺基之高分子化合物,具體而言,可列舉具有上述範圍之質量平均分子量(Mw)之聚乙烯亞胺或聚烯丙基胺。特佳為聚乙烯亞胺。The amine group-containing polymer compound preferably contains at least one, preferably a plurality of primary amine groups, and contains a secondary amine group and/or a tertiary amine group; the amine value (according to JIS K7237) is preferably 700. ~1500 mgKOH/g, especially preferably 850~1200 mgKOH/g. The polymer compound containing an amine group may be a compound having a linear main chain or a compound having a branched structure. Among them, a polymer amine having a branched structure is preferred. Specific examples of the polymer compound containing an amine group include a polyethyleneimine or a polyallylamine having a mass average molecular weight (Mw) in the above range. Particularly preferred is polyethyleneimine.
(B)成分中,此種含有胺基之高分子化合物係以所含有之胺基(一級胺基、及二級胺基及/或三級胺基)與羧酸發生反應而形成鹽之形式含有。作為與含有胺基之高分子化合物之胺基形成鹽之酸,可列舉:鹽酸、硫酸、硝酸、羧酸、磺酸等,由於與胺基之鍵結性之強度適宜,故較佳為羧酸。本發明中,於羧酸中使用包括羰基之碳原子在內之碳數為10以下之羧酸。由於若使用碳數超過10之羧酸,則羧基以外之部分體積變大,故胺基與樹脂或ITO之相互作用受到阻礙,有密接性惡化之虞。本發明中,較佳為使用包括羰基之碳原子在內之碳數為4以下之羧酸,具體而言特佳為甲酸。In the component (B), the amine group-containing polymer compound is formed by reacting an amine group (a primary amine group, a secondary amine group, and/or a tertiary amine group) with a carboxylic acid to form a salt. contain. Examples of the acid which forms a salt with the amine group of the polymer compound containing an amine group include hydrochloric acid, sulfuric acid, nitric acid, a carboxylic acid, a sulfonic acid, etc., and since the bonding strength with the amine group is suitable, it is preferably a carboxyl group. acid. In the present invention, a carboxylic acid having a carbon number of 10 or less including a carbon atom of a carbonyl group is used for the carboxylic acid. When a carboxylic acid having a carbon number of more than 10 is used, the volume of a portion other than the carboxyl group becomes large, so that the interaction between the amine group and the resin or ITO is inhibited, and the adhesion is deteriorated. In the present invention, a carboxylic acid having 4 or less carbon atoms including a carbon atom of a carbonyl group is preferably used, and particularly preferably formic acid.
(B)含有胺基之高分子化合物之羧酸鹽之調配量相對於上述銅粒子100質量份較佳為0.05~5質量份,特佳為0.1~2質量份。即,(B)含有胺基之高分子化合物羧酸鹽相對於銅粒子之調配比例較佳為0.05~5質量%,特佳為0.1~2質量%之範圍。若(B)含有胺基之高分子化合物羧酸鹽之調配量相對於上述銅粒子100質量份為0.05質量份以上,則所得之導電膜與ITO膜表面之密接性變得良好。若為5質量份以下,則阻礙導電性、使導電膜之體積電阻率惡化之情況較少,可形成具有良好導電性之導電膜。(B) The amount of the carboxylate of the polymer compound containing an amine group is preferably 0.05 to 5 parts by mass, particularly preferably 0.1 to 2 parts by mass, per 100 parts by mass of the copper particles. That is, the blending ratio of the (B) amino group-containing polymer compound carboxylate to the copper particles is preferably 0.05 to 5% by mass, particularly preferably 0.1 to 2% by mass. When the amount of the (B) amine group-containing polymer compound carboxylate is 0.05 parts by mass or more based on 100 parts by mass of the copper particles, the adhesion between the obtained conductive film and the surface of the ITO film is good. When the amount is 5 parts by mass or less, the conductivity is inhibited and the volume resistivity of the conductive film is deteriorated, and a conductive film having good conductivity can be formed.
作為(C)成分之含有酸性官能基之樹脂係含有能夠與上述含有胺基之高分子化合物之胺基發生反應而形成鍵之酸性基之樹脂。可自作為導電性膏之黏合劑樹脂而使用之公知之熱固性樹脂中選擇含有能夠與胺基反應之酸性官能基之樹脂而使用。具體可例示酚樹脂或經羧基改質之丙烯酸樹脂,特佳為酚樹脂。The resin containing an acidic functional group as the component (C) contains a resin capable of reacting with an amine group of the above-described amine group-containing polymer compound to form an acidic group of a bond. A resin containing an acidic functional group capable of reacting with an amine group can be selected from known thermosetting resins used as a binder resin for a conductive paste. Specific examples thereof include a phenol resin or a carboxyl group-modified acrylic resin, and particularly preferably a phenol resin.
導電性膏中之(C)含有酸性官能基之樹脂(以下,有時稱為黏合劑樹脂)之含量,根據上述(A)銅粒子之體積與銅粒子間存在之空隙部分之體積之比率適當選擇即可,通常相對於銅粒子100質量份,較佳為5~40質量份,更佳為5~20質量份。若為5質量份以上,則導電性膏之流動特性變得良好。若為40質量份以下,則可將所得之導電膜之體積電阻率控制為較低。The content of the (C) resin having an acidic functional group (hereinafter sometimes referred to as a binder resin) in the conductive paste is appropriately selected from the ratio of the volume of the copper particles (A) to the volume of the void portion existing between the copper particles. The selection is usually carried out, and is usually 5 to 40 parts by mass, more preferably 5 to 20 parts by mass, per 100 parts by mass of the copper particles. When it is 5 parts by mass or more, the flow characteristics of the conductive paste become good. If it is 40 parts by mass or less, the volume resistivity of the obtained conductive film can be controlled to be low.
本發明之導電性膏除上述(A)~(C)之各成分以外,視需要亦可於不損害本發明之效果之範圍內含有以下所示之螯合化合物。In addition to the components (A) to (C), the conductive paste of the present invention may contain a chelate compound shown below as long as it does not impair the effects of the present invention.
該螯合化合物係與銅離子配位並藉由下述式(1)中所示之反應,可與銅離子形成錯合物之化合物。藉由調配此種螯合化合物,於(A)銅粒子中,可降低與大氣中之溶氧等發生反應之銅離子之量,而抑制氧化銅之形成。The chelating compound is a compound which can coordinate with copper ions and form a complex compound with copper ions by a reaction represented by the following formula (1). By blending such a chelating compound, the amount of copper ions which react with dissolved oxygen in the atmosphere can be reduced in the (A) copper particles, and the formation of copper oxide can be suppressed.
[數1][Number 1]
式中之符號表示如下意思。The symbols in the formula indicate the following meanings.
M:銅離子M: copper ion
Z:螯合化合物Z: Chelating compound
MZ:錯鹽MZ: wrong salt
X:與1個銅離子鍵結之螯合化合物之數量X: number of chelating compounds bonded to one copper ion
(D)螯合化合物係與在25℃下離子強度為0.1之情形時之銅離子之穩定度常數logKCu 為5~15的化合物。穩定度常數logKCu 為表示螯合化合物與金屬之鍵結力之強度之指標,可作為上述式(1)中所示之反應式之平衡常數KCu 之對數值而求出。KCu 具體而言可藉由下述式(2)求出。(D) A compound having a chelating compound and a copper ion having a stability constant log K Cu of 5 to 15 at an ionic strength of 0.1 at 25 ° C. The stability constant logKC u is an index indicating the strength of the bonding force between the chelate compound and the metal, and can be obtained as a logarithmic value of the equilibrium constant K Cu of the reaction formula shown in the above formula (1). Specifically, K Cu can be obtained by the following formula (2).
[數2][Number 2]
關於本發明中之「穩定度常數logKCu 」,作為各種化合物之具體數值,記載於例如化學便覽(丸善)、Stability Constants of Metal-Ion Complexes(PERGAMON PRESS)、Journal of Chemical Engineering Data(ACS Publications)等文獻中。The "stability constant log K Cu " in the present invention is described in, for example, a chemical handbook (Maruzen), Stability Constants of Metal-Ion Complexes (PERGAMON PRESS), and Journal of Chemical Engineering Data (ACS Publications). Etc. in the literature.
可認為藉由調配與銅離子之穩定度常數logKCu 為5以上之化合物作為螯合化合物,而於導電性膏(銅膏)內生成之銅離子之至少一部分與該螯合化合物形成錯合物。因此,可降低與大氣中之水分或氧等(例如O2 、H2 O等)發生反應之銅離子之量,並可抑制銅膏內之氧化銅之形成。又,螯合化合物由於難以與銅離子解離,故即便放置於高濕度之環境下,亦可長時間維持錯合物之狀態。因此,難以形成氧化被膜,可製成能夠形成體積電阻率之上升受到抑制之導電膜之導電性膏。It is considered that a compound having a stability constant logK Cu of copper ions of 5 or more is formulated as a chelate compound, and at least a part of copper ions formed in the conductive paste (copper paste) form a complex with the chelate compound. . Therefore, the amount of copper ions which react with moisture or oxygen in the atmosphere (for example, O 2 , H 2 O, etc.) can be reduced, and the formation of copper oxide in the copper paste can be suppressed. Further, since the chelating compound is difficult to dissociate from the copper ions, the state of the complex compound can be maintained for a long period of time even when placed in an environment of high humidity. Therefore, it is difficult to form an oxide film, and it is possible to form a conductive paste which can form a conductive film in which the increase in volume resistivity is suppressed.
由於若螯合化合物之穩定度常數logKCu 未達5,則對銅離子之鍵結力不充分,故無法充分地降低與大氣中之水分或氧等發生反應之銅離子之量,氧化銅之生成之抑制變得困難。又,由於若螯合劑(B)之穩定度數logKCu 大於15,則對銅離子之鍵結力過強,故阻礙銅粒子彼此之接觸,有使導電性惡化之虞。推測原因在於:其不僅對存在於粒子表面之銅離子,亦對銅(金屬銅)發揮作用。再者,穩定度常數logKCu 更佳為7~14。Because if the stability constant of the chelate compound logK Cu less than 5, the bonding force is insufficient to copper ions, it can not sufficiently reduce the amount of copper ions in the atmosphere of the reaction of moisture or oxygen and the like occur, copper oxide, The suppression of generation becomes difficult. Further, since when the chelating agent (B) of the stabilizer is greater than 15 degrees logK Cu, the bonding strength of the copper ions is too strong, so hinder the copper particles contact each other, there is fear that the deterioration of conductivity. The reason is presumed to be that it acts not only on copper ions existing on the surface of the particles but also on copper (metal copper). Further, the stability constant log K Cu is more preferably 7 to 14.
作為螯合化合物,具體而言可使用選自水楊羥肟酸、水楊醛肟、鄰胺基苯酚、水楊酸等之化合物。As the chelating compound, specifically, a compound selected from the group consisting of salicyl hydroxamic acid, salicylaldoxime, ortho-aminophenol, salicylic acid and the like can be used.
於導電性膏中添加(D)螯合化合物之情形時,其含量相對於上述(A)銅粒子100質量份較佳為0.01~1質量份。若導電膏中之螯合化合物之含量未達0.01質量份,則有對體積電阻率之上升之抑制效果變小之虞。另一方面,若螯合化合物之含量超過1質量份,則有阻礙銅粒子彼此之接觸而使導電性降低之虞。When the (D) chelate compound is added to the conductive paste, the content thereof is preferably 0.01 to 1 part by mass based on 100 parts by mass of the copper particles (A). When the content of the chelating compound in the conductive paste is less than 0.01 parts by mass, the effect of suppressing the increase in volume resistivity is small. On the other hand, when the content of the chelating compound exceeds 1 part by mass, the copper particles are prevented from coming into contact with each other to lower the conductivity.
本發明之導電性膏除上述(A)~(C)及(D)之各成分以外,視需要亦可在不損害本發明之效果之範圍內含有溶劑或各種添加劑(調平劑、偶合劑、黏度調整劑、抗氧化劑等)。尤其是為了獲得具有適度流動性之膏,較佳為使其含有可溶解熱固性樹脂之溶劑。In addition to the components of the above (A) to (C) and (D), the conductive paste of the present invention may contain a solvent or various additives (leveling agent, coupling agent) as needed within a range not impairing the effects of the present invention. , viscosity modifiers, antioxidants, etc.). In particular, in order to obtain a paste having moderate fluidity, it is preferred to contain a solvent which can dissolve the thermosetting resin.
作為溶劑,可使用例如:環己酮、環己醇、松脂醇、乙二醇、乙二醇單乙醚、乙二醇單丁醚、乙二醇單乙醚乙酸酯、乙二醇單丁醚乙酸酯、二乙二醇、二乙二醇單乙醚、二乙二醇單丁醚、二乙二醇單乙醚乙酸酯、二乙二醇單丁醚乙酸酯。作為印刷用膏,從設為適度之黏度範圍之觀點而言,導電性膏中所含有之溶劑之量相對於銅粒子較佳為1~10質量%。As the solvent, for example, cyclohexanone, cyclohexanol, rosinol, ethylene glycol, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether can be used. Acetate, diethylene glycol, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate. The amount of the solvent contained in the conductive paste is preferably from 1 to 10% by mass based on the copper particles from the viewpoint of a moderate viscosity range.
導電性膏可藉由混合上述(A)~(D)之各成分及視需要之上述溶劑等以外之成分而獲得。於混合上述(A)~(C)之各成分時,可在不會產生熱固性樹脂之硬化或溶劑之揮發之程度的溫度下,一面加熱一面進行。The conductive paste can be obtained by mixing the components of the above (A) to (D) and, if necessary, the solvent or the like. When the components (A) to (C) are mixed, the heating can be carried out while heating at a temperature which does not cause curing of the thermosetting resin or volatilization of the solvent.
混合、攪拌時之溫度較佳為設為10~40℃。更佳為設為20~30℃。藉由於製備導電膏時加熱至10℃以上之溫度,可使膏之黏度充分地降低,而能夠順利且充分地進行攪拌。另一方面,若製備導電膏時之溫度超過40℃,則有於膏中產生樹脂之硬化之虞,或有產生粒子彼此之熔接之虞。再者,為了防止於混合時銅粒子發生氧化,較佳為於經惰性氣體置換之容器內進行混合。The temperature during mixing and stirring is preferably set to 10 to 40 °C. More preferably, it is set to 20 to 30 °C. By heating to a temperature of 10 ° C or higher when the conductive paste is prepared, the viscosity of the paste can be sufficiently lowered, and the stirring can be smoothly and sufficiently performed. On the other hand, when the temperature at which the conductive paste is prepared exceeds 40 ° C, there is a possibility that the resin is hardened in the paste or that the particles are welded to each other. Further, in order to prevent oxidation of the copper particles during mixing, it is preferred to carry out the mixing in a vessel substituted with an inert gas.
以上所說明之本發明之導電性膏中,由於含有:(A)具有特定之平均粒徑之銅粒子、及(B)含有胺基之高分子化合物之羧酸鹽、及(C)含有能夠與上述含有胺基之高分子化合物之胺基反應的酸性官能基之樹脂(黏合劑樹脂),故藉由該導電性膏所形成之導電膜與ITO膜之密接性優異。認為其原因在於:含有胺基之高分子化合物中所含有之一級胺基等胺基係與黏合劑樹脂所含之酸性基因酸鹼反應而形成鍵,同時亦與ITO膜表面相互作用。因此,由本發明之導電性膏所得之導電膜與ITO膜表面具有良好之密接性。The conductive paste of the present invention described above contains (A) a copper particle having a specific average particle diameter, and (B) a carboxylate containing a polymer compound of an amine group, and (C) containing The resin (binder resin) of the acidic functional group which reacts with the amine group of the above-mentioned amine group-containing polymer compound is excellent in adhesion between the conductive film formed of the conductive paste and the ITO film. The reason for this is that an amine group such as a primary amine group contained in the amine group-containing polymer compound reacts with an acid gene acid base contained in the binder resin to form a bond, and also interacts with the surface of the ITO film. Therefore, the conductive film obtained from the conductive paste of the present invention has good adhesion to the surface of the ITO film.
進而,本發明之導電性膏中,由於含有胺基之高分子化合物中之胺基係以羧酸鹽之狀態存在,故於以膏狀態保存之階段,含有胺基之高分子化合物與黏合劑樹脂之上述酸鹼反應非常緩慢,但若為了使膏硬化而設置為高溫,則含有胺基之高分子化合物之胺基與黏合劑樹脂之酸性基之反應急遽地進行,形成與ITO膜之密接性優異之導電膜。如此,本發明之導電性膏於膏狀態下之保存穩定性優異,沒有由於長時間保存而使所形成之導電膜之導電性或與ITO膜之密接性降低之情況。Further, in the conductive paste of the present invention, since the amine group in the amine group-containing polymer compound exists in the form of a carboxylate salt, the amine group-containing polymer compound and the binder are stored in a paste state. The acid-base reaction of the resin is very slow, but if the paste is cured to be high temperature, the reaction between the amine group of the amine group-containing polymer compound and the acidic group of the binder resin is rapidly performed to form an adhesion to the ITO film. Excellent conductive film. As described above, the conductive paste of the present invention is excellent in storage stability in a paste state, and there is no possibility that the conductivity of the formed conductive film or the adhesion to the ITO film is lowered due to long-term storage.
本發明之實施形態之附有導電膜之基材包含:具有ITO膜之基材、及於該基材之ITO膜上塗佈上述本發明之導電性膏並使其硬化而形成之導電膜。A substrate having a conductive film according to an embodiment of the present invention includes a substrate having an ITO film, and a conductive film formed by applying and curing the conductive paste of the present invention onto the ITO film of the substrate.
作為基材本體,可列舉:玻璃基板、塑膠基板(例如聚醯亞胺基板、聚酯基板等)、包含纖維強化複合材料之基板(例如玻璃纖維強化樹脂基板等)。於該等基材本體之表面形成ITO膜,而構成附有ITO膜之基材。Examples of the substrate main body include a glass substrate, a plastic substrate (for example, a polyimide substrate, a polyester substrate, and the like), and a substrate including a fiber-reinforced composite material (for example, a glass fiber-reinforced resin substrate). An ITO film is formed on the surface of the substrate body to form a substrate with an ITO film.
作為導電性膏之塗佈方法,可列舉:網版印刷法、輥塗法、氣刀塗佈法、刮塗法、棒塗法、凹版印刷塗佈法、模塗法、斜板式塗佈法等公知之方法。該等之中較佳為網版印刷法。Examples of the coating method of the conductive paste include a screen printing method, a roll coating method, an air knife coating method, a knife coating method, a bar coating method, a gravure coating method, a die coating method, and a swash plate coating method. And other known methods. Among these, a screen printing method is preferred.
塗佈層之硬化係藉由以溫風加熱、熱輻射加熱等方法加熱,使導電性膏中之樹脂(熱固性樹脂)硬化而進行。The curing of the coating layer is performed by heating by a method such as warm air heating or heat radiant heating to cure the resin (thermosetting resin) in the conductive paste.
加熱溫度及加熱時間根據導電膜所要求之特性適當決定即可。加熱溫度較佳為80~200℃。若加熱溫度為80℃以上,則黏合劑樹脂之硬化順利地進行,銅粒子間之接觸變得良好而使導電性提高,並且含有胺基之高分子化合物羧酸鹽之胺基與黏合劑樹脂之酸性官能基之反應順利地進行,導電膜與ITO膜之密接性提高。由於若加熱溫度為200℃以下,則可使用塑膠基板作為基材本體,故基材選擇之自由度提高。The heating temperature and the heating time may be appropriately determined depending on the characteristics required for the conductive film. The heating temperature is preferably from 80 to 200 °C. When the heating temperature is 80° C. or more, the curing of the binder resin proceeds smoothly, the contact between the copper particles is good, and the conductivity is improved, and the amine group and the binder resin of the amine compound-containing carboxylate are contained. The reaction of the acidic functional group proceeds smoothly, and the adhesion between the conductive film and the ITO film is improved. When the heating temperature is 200 ° C or lower, a plastic substrate can be used as the substrate body, so that the degree of freedom in substrate selection is improved.
於ITO膜上所形成導電膜之厚度,從確保穩定之導電性與配線形狀之維持之觀點而言,較佳為1~200 μm,更佳為5~100 μm之範圍。The thickness of the conductive film formed on the ITO film is preferably in the range of 1 to 200 μm, more preferably 5 to 100 μm from the viewpoint of ensuring stable conductivity and maintenance of the wiring shape.
導電膜之體積電阻率(亦稱為比電阻)較佳為1.0×10-4 Ωcm以下。若導電膜之體積電阻率超過1.0×10-4 Ωcm,則有難以用作電子設備用之導電體之情形。The volume resistivity (also referred to as specific resistance) of the conductive film is preferably 1.0 × 10 -4 Ωcm or less. When the volume resistivity of the conductive film exceeds 1.0 × 10 -4 Ωcm, it is difficult to use it as an electric conductor for an electronic device.
又,導電膜與ITO膜表面之密接性以利用交叉切割法所測定之值計,較佳為80/100以上。若與ITO膜之密接性未達80/100,則有難以用作電子設備用之導電體之情形。再者,利用交叉切割法之密接性之測定係藉由於利用JIS K 5600-5-6-1999年所規定之方法將導電膜交叉切割為網格狀之後,使用賽珞凡(Cellophane tape)(商品名:賽珞凡#405 Nichiban公司製品)將導電膜剝離而進行。並且,將未剝離而殘存之網格數設為X,並將X/100設為密接性之測定值。Further, the adhesion between the conductive film and the surface of the ITO film is preferably 80/100 or more in terms of a value measured by a cross-cut method. When the adhesion to the ITO film is less than 80/100, it is difficult to use it as an electric conductor for an electronic device. Further, the measurement of the adhesion by the cross-cut method is performed by cross-cutting the conductive film into a grid shape by the method prescribed in JIS K 5600-5-6-1999, using Cellophane tape ( Product name: Saiyan Fan #405 Nichiban Co., Ltd.) The conductive film is peeled off. Further, the number of meshes remaining without being peeled off was set to X, and X/100 was set as the measured value of the adhesion.
以下,藉由實施例更進一步詳細地說明本發明,但本發明並不限定於該等實施例。再者,銅粒子之平均粒徑、導電膜之厚度及體積電阻率(比電阻)係分別使用以下所示之裝置進行測定。Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited to the examples. Further, the average particle diameter of the copper particles, the thickness of the conductive film, and the volume resistivity (specific resistance) were measured using the apparatus shown below.
銅粒子之平均粒徑係藉由對自利用SEM(日本電子公司製造,S-4300)所得之SEM像中隨機選取之100個粒子的Feret直徑進行測定,並計算該等之平均值(數量平均)而求出。The average particle diameter of the copper particles is measured by the Feret diameter of 100 particles randomly selected from SEM images obtained by SEM (manufactured by JEOL Ltd., S-4300), and the average value (quantity average) is calculated. And find it.
導電膜之厚度係使用DEKTAK3(Veeco metrology Group公司製造)進行測定。The thickness of the conductive film was measured using DEKTAK3 (manufactured by Veeco Metrology Group Co., Ltd.).
導電膜之體積電阻率係使用四探針式體積電阻率計(三菱油化公司製造,型號:LorestaIP MCP-T250)進行測定。The volume resistivity of the conductive film was measured using a four-probe volume resistivity meter (manufactured by Mitsubishi Petrochemical Co., Ltd., model: Loresta IP MCP-T250).
於將水溫設定為50℃之水浴(Water Bath)內設置玻璃製燒杯,於燒杯內放入聚乙烯亞胺(日本觸媒公司製造,商品名:SP012,Mw:1200,胺值:1064 mgKOH/g)50 g,一面激烈地進行攪拌一面緩慢滴加甲酸43 g。呈淡黃色之上述聚乙烯亞胺一面冒煙一面激烈地反應,變為茶褐色之液體。滴加結束後,於該狀態下攪拌30分鐘之後,將產物回收至玻璃容器內。重量為聚乙烯亞胺與甲酸之和,利用FT-IR(Nicolet公司製造,Avatar370)對產物進行觀察,於1700 cm-1 附近出現之源於羧酸之羰基之峰值消失。藉此,可確認生成聚乙烯亞胺與甲酸之鹽。A glass beaker was placed in a water bath in which the water temperature was set to 50 ° C, and polyethyleneimine (manufactured by Nippon Shokubai Co., Ltd., trade name: SP012, Mw: 1200, amine value: 1064 mgKOH) was placed in the beaker. /g) 50 g, 43 g of formic acid was slowly added dropwise while stirring vigorously. The above-mentioned polyethyleneimine, which is pale yellow, reacts violently while being smoked, and turns into a brownish-brown liquid. After the completion of the dropwise addition, the mixture was stirred in this state for 30 minutes, and then the product was recovered into a glass vessel. The weight was the sum of polyethyleneimine and formic acid, and the product was observed by FT-IR (manufactured by Nicolet Co., Avatar 370), and the peak of the carbonyl group derived from the carboxylic acid which appeared at around 1700 cm -1 disappeared. Thereby, it was confirmed that a salt of polyethyleneimine and formic acid was formed.
於其他玻璃製燒杯內,放入甲酸3.0 g及50質量%之次亞磷酸水溶液9.0 g之後,將該燒杯放入水浴中且保持於40℃。於該燒杯內逐漸添加銅粒子(三井金屬礦業公司製造,商品名:1400YP,平均一次粒徑:7 μm)5.0 g,攪拌30分鐘而獲得銅分散液。After placing 3.0 g of formic acid and 9.0 g of a 50% by mass aqueous solution of hypophosphite in another glass beaker, the beaker was placed in a water bath and kept at 40 °C. Copper particles (manufactured by Mitsui Mining & Mining Co., Ltd., trade name: 1400YP, average primary particle diameter: 7 μm) 5.0 g were gradually added to the beaker, and stirred for 30 minutes to obtain a copper dispersion.
使用離心分離器,以旋轉數3000 rpm進行10分鐘離心分離,自所得之銅分散液回收沈澱物。使該沈澱物分散於蒸餾水30 g中,再次藉由離心分離而使凝聚物沈澱,並分離沈澱物。其後,將所得之沈澱物於-35 kPa之減壓下,且於80℃下加熱60分鐘,使殘留水分揮發而逐漸去除,從而獲得粒子表面經表面改質之銅粒子(A-1)。The precipitate was collected from the obtained copper dispersion by centrifugal separation using a centrifugal separator at a number of revolutions of 3000 rpm for 10 minutes. The precipitate was dispersed in 30 g of distilled water, and the aggregate was again precipitated by centrifugation, and the precipitate was separated. Thereafter, the obtained precipitate was heated under a reduced pressure of -35 kPa and heated at 80 ° C for 60 minutes to volatilize residual moisture and gradually removed, thereby obtaining surface-modified copper particles (A-1). .
所得之銅粒子(A-1)之表面氧量為0.16。該值係利用X射線光電子光譜分析(ULVAC Fire公司製造,ESCA5500)求出表面氧濃度[原子%]及表面銅濃度[原子%],表面銅濃度除以表面氧濃度而算出。再者,使用氧量計(LECO公司製造,商品編號:「ROH-600」)進行測定,銅粒子(A-1)中之氧量為460 ppm。The surface oxygen amount of the obtained copper particles (A-1) was 0.16. This value was calculated by X-ray photoelectron spectroscopy (manufactured by ULVAC Fire Co., Ltd., ESCA 5500) to determine the surface oxygen concentration [atomic %] and the surface copper concentration [atomic %], and the surface copper concentration was divided by the surface oxygen concentration. Further, the amount of oxygen in the copper particles (A-1) was 460 ppm using an oxygen meter (manufactured by LECO Co., Ltd., product number: "ROH-600").
繼而,將所得之表面改質銅粒子(A-1)12 g加入將酚樹脂(群榮化學公司製造,商品名:Resitop PL6220,於以下之例中均相同)7.4 g溶解於乙二醇單基醚乙酸酯4.3 g中而成之樹脂溶液中。進而,與混合物一同將上述所得之聚乙烯亞胺之甲酸鹽0.05 g放入乳缽中,並於室溫下混合而獲得銅膏。再者,聚乙烯亞胺之甲酸鹽之調配量相對於銅粒子為0.4質量%。Then, the obtained surface-modified copper particles (A-1) 12 g were added to a phenol resin (manufactured by QunRong Chemical Co., Ltd., trade name: Resitop PL6220, the same in the following examples) 7.4 g dissolved in ethylene glycol single The ether ether acetate was made into a resin solution of 4.3 g. Further, 0.05 g of the formate of polyethyleneimine obtained above was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. Further, the amount of the formate of polyethyleneimine was 0.4% by mass based on the copper particles.
於將水溫設定為50℃之水浴內設置玻璃製燒杯,於燒杯內放入聚烯丙基胺(日東紡公司製造,商品名:PAA-01,Mw:1600,胺值:1120 mgKOH/g,15質量%水溶液)50 g,一面激烈地進行攪拌一面緩慢滴加甲酸6.5 g。呈淡黃色之上述聚烯丙基胺一面冒煙一面激烈地反應,變為茶褐色之液體。滴加結束後,於該狀態下攪拌30分鐘之後,將產物回收於茄形燒瓶中。在茄形燒瓶中將產物於50℃下乾燥24小時,獲得經乾燥之聚烯丙基胺之甲酸鹽。A glass beaker was placed in a water bath set to a water temperature of 50 ° C, and polyallylamine was placed in the beaker (manufactured by Nitto Spin Co., Ltd., trade name: PAA-01, Mw: 1600, amine value: 1120 mgKOH/g) 50 g of a 15% by mass aqueous solution, and 6.5 g of formic acid was slowly added dropwise while stirring vigorously. The above-mentioned polyallylamine, which is pale yellow, reacts violently while being smoked, and turns into a brownish-brown liquid. After the completion of the dropwise addition, after stirring for 30 minutes in this state, the product was recovered in an eggplant-shaped flask. The product was dried at 50 ° C for 24 hours in an eggplant-shaped flask to obtain a dried polyallylamine formate.
繼而,將以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g加入到將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液中,進而與該混合物一同將上述所得之聚烯丙基胺之甲酸鹽0.05 g放入乳缽中,於室溫下混合而獲得銅膏。再者,聚烯丙基胺甲酸鹽之調配量相對於銅粒子為0.4質量%。Then, 12 g of the surface-modified copper particles (A-1) obtained in the same manner as in Example 1 was added to a resin obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. In the solution, 0.05 g of the polyallylamine formate obtained above was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. Further, the amount of the polyallylamine formate was 0.4% by mass based on the copper particles.
以與實施例1相同之方式製備聚乙烯亞胺甲酸鹽,將該聚乙烯亞胺甲酸鹽之添加量設為0.07 g,除此以外,以與實施例1相同之方式獲得銅膏。再者,聚乙烯亞胺甲酸鹽之調配量相對於銅粒子為0.6質量%。A copper paste was obtained in the same manner as in Example 1 except that a polyethyleneimine formate was prepared in the same manner as in Example 1 except that the amount of the polyethyleneimine formate was changed to 0.07 g. Further, the blending amount of the polyethyleneimine formate was 0.6% by mass based on the copper particles.
以與實施例1相同之方式製備聚乙烯亞胺甲酸鹽,將該聚乙烯亞胺甲酸鹽之添加量設為0.24 g,除此以外,以與實施例1相同之方式獲得銅膏。再者,聚乙烯亞胺甲酸鹽之調配量相對於銅粒子為2質量%。A copper paste was obtained in the same manner as in Example 1 except that a polyethyleneimine formate was prepared in the same manner as in Example 1 except that the amount of the polyethyleneimine formate was changed to 0.24 g. Further, the blending amount of the polyethyleneimine formate was 2% by mass based on the copper particles.
以與實施例1相同之方式製備聚乙烯亞胺甲酸鹽,將該聚乙烯亞胺甲酸鹽之添加量設為0.024 g,除此以外,以與實施例1相同之方式獲得銅膏。再者,聚乙烯亞胺甲酸鹽之調配量相對於銅粒子為0.2質量%。A copper paste was obtained in the same manner as in Example 1 except that a polyethyleneimine formate was prepared in the same manner as in Example 1 except that the amount of the polyethyleneimine formate was changed to 0.024 g. Further, the blending amount of the polyethyleneimine formate was 0.2% by mass based on the copper particles.
於將水溫設定為50℃之水浴內設置玻璃製燒杯,於燒杯內放入聚乙烯亞胺(日本觸媒公司製造,商品名:SP006,Mw:600,胺值:1120 mgKOH/g)50 g,一面激烈地進行攪拌一面緩慢滴加甲酸45 g。呈淡黃色之上述聚乙烯亞胺一面冒煙一面激烈地反應,變為茶褐色之液體。滴加結束後,於該狀態下攪拌30分鐘之後,將作為產物之聚乙烯亞胺之甲酸鹽回收於玻璃容器內。A glass beaker was placed in a water bath set to a water temperature of 50 ° C, and polyethyleneimine (manufactured by Nippon Shokubai Co., Ltd., trade name: SP006, Mw: 600, amine value: 1120 mgKOH/g) was placed in the beaker. g, 45 g of formic acid was slowly added dropwise while stirring vigorously. The above-mentioned polyethyleneimine, which is pale yellow, reacts violently while being smoked, and turns into a brownish-brown liquid. After completion of the dropwise addition, the mixture was stirred in this state for 30 minutes, and then the formate of polyethyleneimine as a product was recovered in a glass container.
繼而,將以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g加入到將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液中,進而與該混合物一同將上述所得之聚乙烯亞胺甲酸鹽0.05 g放入乳缽中,於室溫下混合而獲得銅膏。再者,聚乙烯亞胺甲酸鹽之調配量相對於銅粒子為0.4質量%。Then, 12 g of the surface-modified copper particles (A-1) obtained in the same manner as in Example 1 was added to a resin obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. In the solution, 0.05 g of the polyethyleneimine formate obtained above was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. Further, the blending amount of the polyethyleneimine formate was 0.4% by mass based on the copper particles.
於將水溫設定為50℃之水浴內設置玻璃製燒杯,於燒杯內放入聚乙烯亞胺(日本觸媒公司製造,商品名:SP018,Mw:1800,胺值:1064 mgKOH/g)50 g,一面激烈地進行攪拌一面緩慢滴加甲酸43 g。呈淡黃色之上述聚乙烯亞胺一面冒煙一面激烈地反應,變為茶褐色之液體。滴加結束後,於該狀態下攪拌30分鐘之後,將作為產物之聚乙烯亞胺之甲酸鹽回收於玻璃容器內。A glass beaker was placed in a water bath set to a water temperature of 50 ° C, and polyethyleneimine (manufactured by Nippon Shokubai Co., Ltd., trade name: SP018, Mw: 1800, amine value: 1064 mgKOH/g) was placed in a beaker. g, 43 g of formic acid was slowly added dropwise while stirring vigorously. The above-mentioned polyethyleneimine, which is pale yellow, reacts violently while being smoked, and turns into a brownish-brown liquid. After completion of the dropwise addition, the mixture was stirred in this state for 30 minutes, and then the formate of polyethyleneimine as a product was recovered in a glass container.
繼而,將以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g加入到將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液中,進而與該混合物一同將上述所得之聚乙烯亞胺甲酸鹽0.05 g放入乳缽中,於室溫下混合而獲得銅膏。再者,聚乙烯亞胺甲酸鹽之調配量相對於銅粒子為0.4質量%。Then, 12 g of the surface-modified copper particles (A-1) obtained in the same manner as in Example 1 was added to a resin obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. In the solution, 0.05 g of the polyethyleneimine formate obtained above was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. Further, the blending amount of the polyethyleneimine formate was 0.4% by mass based on the copper particles.
於將水溫設定為50℃之水浴內設置玻璃製燒杯,於燒杯內放入聚乙烯亞胺(日本觸媒公司製造,商品名:SP020,Mw:10000,胺值:1008 mgKOH/g)50 g,一面激烈地進行攪拌一面緩慢滴加甲酸41 g。呈淡黃色之上述聚乙烯亞胺一面冒煙一面激烈地反應,變為茶褐色之液體。滴加結束後,於該狀態下攪拌30分鐘之後,將作為產物之聚乙烯亞胺之甲酸鹽回收於玻璃容器內。A glass beaker was placed in a water bath set to a water temperature of 50 ° C, and polyethyleneimine (manufactured by Nippon Shokubai Co., Ltd., trade name: SP020, Mw: 10000, amine value: 1008 mgKOH/g) was placed in the beaker. g, 41 g of formic acid was slowly added dropwise while stirring vigorously. The above-mentioned polyethyleneimine, which is pale yellow, reacts violently while being smoked, and turns into a brownish-brown liquid. After completion of the dropwise addition, the mixture was stirred in this state for 30 minutes, and then the formate of polyethyleneimine as a product was recovered in a glass container.
繼而,將以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g加入到將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液中,進而與該混合物一同將上述所得之聚乙烯亞胺甲酸鹽0.05 g放入乳缽中,於室溫下混合而獲得銅膏。再者,聚乙烯亞胺甲酸鹽之調配量相對於銅粒子為0.4質量%。Then, 12 g of the surface-modified copper particles (A-1) obtained in the same manner as in Example 1 was added to a resin obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. In the solution, 0.05 g of the polyethyleneimine formate obtained above was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. Further, the blending amount of the polyethyleneimine formate was 0.4% by mass based on the copper particles.
以與實施例1相同之方式製備聚乙烯亞胺甲酸鹽,將該聚乙烯亞胺甲酸鹽之添加量設為0.63 g,除此以外,以與實施例1相同之方式獲得銅膏。再者,聚乙烯亞胺甲酸鹽之調配量相對於銅粒子為5質量%。A copper paste was obtained in the same manner as in Example 1 except that a polyethyleneimine formate was prepared in the same manner as in Example 1 except that the amount of the polyethyleneimine formate was changed to 0.63 g. Further, the blending amount of the polyethyleneimine formate was 5% by mass based on the copper particles.
除加入乙酸56 g代替甲酸43 g以外,以與實施例1相同之方式製備聚乙烯亞胺乙酸鹽,並以與實施例1相同之方式獲得銅膏。聚乙烯亞胺之乙酸鹽之調配量為0.46質量%。A polyethyleneimine acetate was prepared in the same manner as in Example 1 except that 56 g of acetic acid was added instead of 43 g of formic acid, and a copper paste was obtained in the same manner as in Example 1. The blending amount of the polyethyleneimine acetate was 0.46% by mass.
除加入丙酸69 g代替甲酸43 g而以外,以與實施例1相同之方式製備聚乙烯亞胺丙酸鹽,並以與實施例1相同之方式獲得銅膏。聚乙烯亞胺之丙酸鹽之調配量為0.51質量%。A polyethyleneimine propionate was prepared in the same manner as in Example 1 except that 69 g of propionic acid was added instead of 43 g of formic acid, and a copper paste was obtained in the same manner as in Example 1. The blending amount of the propionate of polyethyleneimine was 0.51% by mass.
將以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g加入到將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液中。並且,將該混合物放入乳缽中,於室溫下混合而獲得銅膏。12 g of surface-modified copper particles (A-1) obtained in the same manner as in Example 1 was added to a resin solution obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. . Further, the mixture was placed in a mortar and mixed at room temperature to obtain a copper paste.
將以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g加入到將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液中,進而與該混合物一同將聚乙烯亞胺(日本觸媒公司製造,商品名:SP012,Mw:1200,胺值:1064 mmol/g)0.05 g放入乳缽中,於室溫下混合而獲得銅膏。再者,上述聚乙烯亞胺之調配量相對於銅粒子為0.4質量%。12 g of surface-modified copper particles (A-1) obtained in the same manner as in Example 1 was added to a resin solution obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. Further, together with the mixture, polyethyleneimine (manufactured by Nippon Shokubai Co., Ltd., trade name: SP012, Mw: 1200, amine value: 1064 mmol/g) 0.05 g was placed in a mortar and mixed at room temperature to obtain Copper paste. Further, the amount of the polyethyleneimine blended was 0.4% by mass based on the copper particles.
於以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g中,與將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液一同加入1,10-二胺基癸烷0.05 g。進行與實施例1相同之操作而獲得銅膏。1,10-二胺基癸烷之調配量相對於銅粒子為0.4質量%。In 12 g of the surface-modified copper particles (A-1) obtained in the same manner as in Example 1, and a resin solution obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. 0.05 g of 1,10-diaminodecane was added together. The same operation as in Example 1 was carried out to obtain a copper paste. The amount of 1,10-diaminodecane was 0.4% by mass based on the copper particles.
於以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g中,與將酚樹脂7.4g溶解於乙二醇單丁醚乙酸酯4.3 g而成之樹脂溶液一同加入聚乙烯吡咯烷酮(純正化學公司製造,商品名:PVP-K15)0.05 g。進行與實施例1相同之操作而獲得銅膏。聚乙烯吡咯烷酮之調配量相對於銅粒子為0.4質量%。In 12 g of the surface-modified copper particles (A-1) obtained in the same manner as in Example 1, together with a resin solution obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. Polyvinylpyrrolidone (manufactured by Junsei Chemical Co., Ltd., trade name: PVP-K15) 0.05 g was added. The same operation as in Example 1 was carried out to obtain a copper paste. The blending amount of polyvinylpyrrolidone was 0.4% by mass based on the copper particles.
於以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g中,與將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g而成之樹脂溶液一同加入三聚氰胺樹脂(三井化學公司製造,商品名:UVAN122)0.083 g。進行與實施例1相同之操作而獲得銅膏。三聚氰胺樹脂之調配量相對於銅粒子為0.4質量%。In 12 g of the surface-modified copper particles (A-1) obtained in the same manner as in Example 1, together with a resin solution obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. A melamine resin (manufactured by Mitsui Chemicals, Inc., trade name: UVAN122) of 0.083 g was added. The same operation as in Example 1 was carried out to obtain a copper paste. The blending amount of the melamine resin was 0.4% by mass based on the copper particles.
於將水溫設定為50℃之水浴內設置玻璃製燒杯,於燒杯內放入聚乙烯亞胺(日本觸媒公司製造,商品名:SP012,Mw:1200,胺值:1064 mmol/g)5 g並攪拌。一面激烈地進行攪拌一面緩慢滴加月桂醯肌胺酸25 g。呈淡黃色之上述聚乙烯亞胺變為淡黃色之濁液。滴加結束後,於該狀態下攪拌30分鐘之後,將產物回收於玻璃容器中。如此,獲得認為是聚乙烯亞胺之月桂醯肌胺酸鹽之產物。再者,於以下之記載及表中,將如此所得之產物表示為聚乙烯亞胺之月桂醯肌胺酸鹽。A glass beaker was placed in a water bath set to a water temperature of 50 ° C, and polyethyleneimine (manufactured by Nippon Shokubai Co., Ltd., trade name: SP012, Mw: 1200, amine value: 1064 mmol/g) was placed in the beaker. g and stir. While vigorously stirring, slowly add 25 g of lauric acid to the creatinine. The above polyethyleneimine which is pale yellow turns into a pale yellow turbid liquid. After the completion of the dropwise addition, the mixture was stirred in this state for 30 minutes, and then the product was recovered in a glass vessel. Thus, a product of Laurel Creatine, which is considered to be a polyethyleneimine, was obtained. Further, in the following description and the table, the product thus obtained is represented by the polyimidate of Laurel Creatine.
繼而,將以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g加入到將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液中。進而與該混合物一同將上述所得之聚乙烯亞胺之月桂醯肌胺酸鹽0.05 g放入乳缽中,於室溫下混合而獲得銅膏。再者,聚乙烯亞胺之月桂醯肌胺酸鹽之調配量相對於銅粒子為0.4質量%。Then, 12 g of the surface-modified copper particles (A-1) obtained in the same manner as in Example 1 was added to a resin obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. In solution. Further, 0.05 g of the polyethylenimine lauric acid creatinine obtained above was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. Further, the blending amount of the lauric acid creatine of the polyethyleneimine was 0.4% by mass based on the copper particles.
將以與比較例6相同之方式所得之聚乙烯亞胺之月桂醯肌胺酸鹽設為0.18 g,除此以外,以與比較例6相同之方式獲得銅膏。再者,聚乙烯亞胺之月桂醯肌胺酸鹽之調配量相對於銅粒子為1.4質量%。A copper paste was obtained in the same manner as in Comparative Example 6, except that the polyethylenimine lauric acid mytamine obtained in the same manner as in Comparative Example 6 was set to 0.18 g. Further, the blending amount of the lauric acid creatine of the polyethyleneimine was 1.4% by mass based on the copper particles.
將以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g加入到將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液中,進而與該混合物一同將對甲苯磺酸之胺鹽(KING INDUSTRY公司製造,商品名:NACURE2500)0.07 g放入乳缽中,於室溫下混合而獲得銅膏。再者,上述對甲苯磺酸之胺鹽之調配量相對於銅粒子為0.6質量%。12 g of surface-modified copper particles (A-1) obtained in the same manner as in Example 1 was added to a resin solution obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. Further, 0.07 g of an amine salt of p-toluenesulfonic acid (manufactured by KING INDUSTRY Co., Ltd., trade name: NACURE 2500) was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. Further, the amount of the above-mentioned amine salt of p-toluenesulfonic acid was 0.6% by mass based on the copper particles.
將以與實施例1相同之方式所得之表面改質銅粒子(A-1)12 g加入到將酚樹脂7.4 g溶解於乙二醇單丁醚乙酸酯4.3 g中而成之樹脂溶液中,進而與該混合物一同將對甲苯磺酸之胺鹽(KING INDUSTRY公司製造,商品名:NACURE2500)0.72 g放入乳缽中,於室溫下混合而獲得銅膏。再者,上述對甲苯磺酸之胺鹽之調配量相對於銅粒子為6.0質量%。12 g of surface-modified copper particles (A-1) obtained in the same manner as in Example 1 was added to a resin solution obtained by dissolving 7.4 g of a phenol resin in 4.3 g of ethylene glycol monobutyl ether acetate. Further, 0.72 g of an amine salt of p-toluenesulfonic acid (manufactured by KING INDUSTRY Co., Ltd., trade name: NACURE 2500) was placed in a mortar together with the mixture, and mixed at room temperature to obtain a copper paste. Further, the amount of the above-mentioned amine salt of p-toluenesulfonic acid was 6.0% by mass based on the copper particles.
繼而,將實施例1~11及比較例1~9中剛獲得之銅膏分別塗佈於藉由濺鍍法成膜之附有ITO膜之玻璃基板之ITO膜(厚度100 nm)上,並於150℃下加熱30分鐘使酚樹脂硬化,從而形成厚度20 μm之導電膜。並且,使用電阻值計(Keithley公司製造,商品名:Milliohm High-Tester)測定所得之導電膜之電阻值,測定體積電阻率(比電阻;單位μΩcm)。又,利用交叉切割法評價導電膜之密接性。Then, the copper pastes obtained in Examples 1 to 11 and Comparative Examples 1 to 9 were respectively applied onto an ITO film (thickness: 100 nm) of a glass substrate with an ITO film formed by sputtering, and The phenol resin was hardened by heating at 150 ° C for 30 minutes to form a conductive film having a thickness of 20 μm. Further, the resistance value of the obtained conductive film was measured using a resistance meter (manufactured by Keithley Co., Ltd., trade name: Milliohm High-Tester), and the volume resistivity (specific resistance; unit μΩcm) was measured. Further, the adhesion of the conductive film was evaluated by a cross-cut method.
進而,關於實施例1~11及比較例2中所得之銅膏,使用於3℃下保管30天後者並以與上述相同之方式塗佈於ITO膜上而形成導電膜。並且,進行所得之導電膜的體積電阻率之測定及密接性之評價。將該等測定、評價結果示於表1中。Further, the copper pastes obtained in Examples 1 to 11 and Comparative Example 2 were used for storage for 30 days at 3 ° C, and were applied to an ITO film in the same manner as described above to form a conductive film. Further, the volume resistivity of the obtained conductive film was measured and the adhesion was evaluated. The measurement and evaluation results are shown in Table 1.
如由表1所知般,藉由與表面改質銅粒子一同調配聚乙烯亞胺之甲酸鹽、聚乙烯亞胺之乙酸鹽、聚乙烯亞胺之丙酸鹽或聚烯丙基胺之甲酸鹽而成之實施例1~11的銅膏所形成之導電膜與ITO膜之密接性良好,並且體積電阻率低,具有足夠高之導電性。進而,該等銅膏於保存穩定性方面亦優異,即便長時間保存後導電膜與ITO膜之密接性或導電性亦不會降低。As is known from Table 1, a formate of polyethyleneimine, an acetate of polyethyleneimine, a propionate of polyethyleneimine or a polyallylamine is formulated together with surface-modified copper particles. The conductive film formed of the copper pastes of Examples 1 to 11 having a formate was excellent in adhesion to the ITO film, and had a low volume resistivity and a sufficiently high conductivity. Further, these copper pastes are also excellent in storage stability, and the adhesion and conductivity of the conductive film and the ITO film are not lowered even after long-term storage.
參照特定之實施態樣對本發明進行了詳細說明,但業者清楚,在不脫離本發明之精神及範圍之情況下可進行各種變更或修正。The present invention has been described in detail with reference to the specific embodiments thereof. It is understood that various changes and modifications may be made without departing from the spirit and scope of the invention.
本申請案係基於2010年11月16日提出申請之日本專利申請案2010-255652者,其內容作為參照而併入本文中。The present application is based on Japanese Patent Application No. 2010-255652 filed on Jan.
本發明之導電性膏可利用於各種用途,例如可利用於印刷配線基板等中之配線圖案之形成及修復、半導體封裝體內之層間配線、印刷配線基板與電子零件之接合等用途。The conductive paste of the present invention can be used for various applications, for example, for formation and repair of wiring patterns in printed wiring boards and the like, interlayer wiring in a semiconductor package, and bonding of printed wiring boards and electronic parts.
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TW200800609A (en) * | 2006-02-20 | 2008-01-01 | Daicel Chem | Porous membrane film and laminate using the same |
TW200940743A (en) * | 2007-12-18 | 2009-10-01 | Hitachi Chemical Co Ltd | Copper conductive film and fabricating method thereof, conductive substrate and fabricating method thereof, copper conductive wire and fabricating method thereof and treatinh solution |
TW201022152A (en) * | 2008-09-19 | 2010-06-16 | Asahi Glass Co Ltd | Conductive filler, conductive paste and article having conductive film |
JP2010001495A (en) * | 2009-09-29 | 2010-01-07 | Nippon Shokubai Co Ltd | Polyalkyleneimine derivative, method of manufacturing the same, and use thereof |
Also Published As
Publication number | Publication date |
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WO2012067016A1 (en) | 2012-05-24 |
KR101856802B1 (en) | 2018-05-10 |
JPWO2012067016A1 (en) | 2014-05-12 |
KR20140002643A (en) | 2014-01-08 |
TW201227754A (en) | 2012-07-01 |
JP5880441B2 (en) | 2016-03-09 |
CN103210452A (en) | 2013-07-17 |
CN103210452B (en) | 2015-06-17 |
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