TWI499876B - Method for monitoring semiconductor device - Google Patents

Method for monitoring semiconductor device Download PDF

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TWI499876B
TWI499876B TW098142113A TW98142113A TWI499876B TW I499876 B TWI499876 B TW I499876B TW 098142113 A TW098142113 A TW 098142113A TW 98142113 A TW98142113 A TW 98142113A TW I499876 B TWI499876 B TW I499876B
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monitoring
semiconductor
reaction chamber
carrier
processor
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TW098142113A
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TW201120595A (en
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Clement Chang
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Pc Fan Technology Inc
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Description

半導體元件之監控方法Semiconductor component monitoring method

本發明是有關於一種半導體元件之監控方法,且特別是有關於一種利用電荷耦合元件(CCD)來監控半導體元件之數量的方法。The present invention relates to a method of monitoring a semiconductor device, and more particularly to a method of monitoring the number of semiconductor devices using a charge coupled device (CCD).

在積體電路(IC)、顯示元件或光電元件等半導體元件的製造過程中,均須經過非常多道的製程,例如微影製程、蝕刻(Etching)製程、離子植入(Ion Implantion)製程等等。在一些製程步驟中,例如微影製程中的顯影程序、濕式蝕刻步驟與光阻剝除程序等等,通常係將由多個製作中的半導體元件所組成的一整批元件裝設於一承載架中,再一起進行這些處理程序。In the manufacturing process of semiconductor devices such as integrated circuits (ICs), display elements, or photovoltaic elements, it is necessary to go through a lot of processes, such as lithography, etching, ion implantation (Ion Implantion), etc. Wait. In some process steps, such as a development process in a lithography process, a wet etching step, a photoresist stripping process, etc., a batch of components consisting of a plurality of fabricated semiconductor components are typically mounted on a carrier. In the rack, carry out these processing procedures together.

進行這一整批之半導體元件的濕式處理時,一整批的半導體元件由承載架載負並放置於濕式處理槽之內進行處理,完成處理程序後,再透過承載架將其上所負載之半導體元件移出濕式處理槽。然而,在這些濕式處理過程中,半導體元件在濕式處理槽中可能會從承載架中掉出、或者可能產生破片而掉落。如此一來,當下一批半導體元件在此同一濕式處理槽中進行處理時,由承載架所載負的半導體元件進入此濕式處理槽時,之前所掉落在濕式處理槽內之半導體元件或破裂的半導體元件可能會對欲進行處理的此批半導體元件造成損害。嚴重的話甚至可能會導致整批待處理之半導體元件全部損毀,不僅會大大地降低製程良率,更會降低濕式處理槽之效能。When performing the wet processing of the entire batch of semiconductor components, a batch of semiconductor components are carried by the carrier and placed in the wet processing tank for processing. After the processing procedure is completed, the semiconductor component is placed on the carrier. The loaded semiconductor component is removed from the wet processing bath. However, during these wet processing, the semiconductor component may fall out of the carrier in the wet processing tank, or may fall off due to fragmentation. In this way, when the next batch of semiconductor components are processed in the same wet processing tank, the semiconductor element that was previously dropped in the wet processing tank when the negative semiconductor component carried by the carrier enters the wet processing tank The component or the ruptured semiconductor component may cause damage to the batch of semiconductor components to be processed. Seriously, it may even cause the entire batch of semiconductor components to be processed to be destroyed, which not only greatly reduces the process yield, but also reduces the efficiency of the wet processing tank.

因此,本發明之目的就是在提供一種半導體元件之監控方法,其可在半導體元件在製程線上期間,即時監控由一承載架所承載之半導體元件的數量。SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of monitoring a semiconductor device that monitors the number of semiconductor components carried by a carrier during the semiconductor component on the process line.

本發明之另一目的是在提供一種半導體元件之監控方法,可監控半導體元件在一處理程序前與後的數量,而可即時監控半導體元件在處理前後之數量變化,因此線上工作人員可根據監控結果即時排除掉落在反應槽中之半導體元件,而可有效防止掉落之半導體元件損壞後續在同一反應槽中進行處理之半導體元件,進而可大幅提高製程良率。Another object of the present invention is to provide a monitoring method for a semiconductor component, which can monitor the number of semiconductor components before and after a processing procedure, and can instantly monitor the change of the number of semiconductor components before and after processing, so that the online staff can monitor As a result, the semiconductor element dropped in the reaction tank is immediately removed, and the semiconductor element which is dropped can be effectively prevented from damaging the semiconductor element which is subsequently processed in the same reaction tank, and the process yield can be greatly improved.

根據本發明之上述目的,提出一種半導體元件之監控方法,以監控欲在一反應室中進行處理且由一承載架所承載之複數個半導體元件的數量。此半導體元件之監控方法至少包括:提供一監控設備,其中監控設備至少包括一電荷耦合元件、與一處理器與電荷耦合元件電性連接,以接收電荷耦合元件所發出之影像訊號;將承載架載入反應室前,利用監控設備對承載架進行一第一監控步驟,以取得一第一半導體元件數量儲存於處理器中;將承載架從該反應室載出後,利用監控設備對該承載架進行一第二監控步驟,以取得一第二半導體元件數量儲存於處理器中;以及進行一比對步驟,以比對第一半導體元件數量與第二半導體元件數量。In accordance with the above objects of the present invention, a method of monitoring a semiconductor device is disclosed for monitoring the number of semiconductor components to be processed in a reaction chamber and carried by a carrier. The monitoring method of the semiconductor component includes at least: providing a monitoring device, wherein the monitoring device includes at least one charge coupled component electrically connected to a processor and the charge coupled component to receive the image signal emitted by the charge coupled component; Before loading the reaction chamber, the monitoring device performs a first monitoring step on the carrier to obtain a quantity of the first semiconductor component stored in the processor; after the carrier is carried out from the reaction chamber, the bearing device is used by the monitoring device The second monitoring step is performed to obtain a second number of semiconductor components stored in the processor; and an alignment step is performed to compare the number of the first semiconductor components with the number of the second semiconductor components.

依照本發明一較佳實施例,上述之監控設備更至少包括一警報器與處理器電性連接,以在比對步驟中,當第一半導體元件數量與第二半導體元件數量不同時發出警報。According to a preferred embodiment of the present invention, the monitoring device further includes at least one alarm coupled to the processor to issue an alarm when the number of the first semiconductor components is different from the number of the second semiconductor components in the comparing step.

本發明揭露一種半導體元件之監控方法,可即時監控一承載架上之半導體元件的數量。為了使本發明之敘述更加詳盡與完備,可參照下列描述並配合第1圖至第3圖之圖式。The invention discloses a method for monitoring a semiconductor component, which can instantly monitor the number of semiconductor components on a carrier. In order to make the description of the present invention more detailed and complete, reference is made to the following description in conjunction with the drawings of Figures 1 through 3.

本發明所揭示之半導體元件之監控方法主要係用以監控一承載架所裝載之半導體元件的數量變化。請同時參照第1圖與第2圖,其中第1圖係繪示依照本發明一較佳實施例的一種半導體元件之監控裝置的示意圖,而第2圖係繪示依照本發明一較佳實施例的一種半導體元件之監控方法的流程圖。在一示範實施例中,進行半導體元件106之監控主要係監控由一承載架104所承載之數個半導體元件106,在一製程反應室中進行反應前與反應後的數量變化,以即時監控承載架104上之半導體元件106的數量,並根據監控資料即時對製程反應室進行狀況排除的動作。在一實施例中,半導體元件106可為一般常見的晶圓或顯示元件的玻璃基板等。The monitoring method of the semiconductor component disclosed by the present invention is mainly for monitoring the change in the number of semiconductor components mounted on a carrier. Please refer to FIG. 1 and FIG. 2 simultaneously. FIG. 1 is a schematic diagram showing a monitoring device for a semiconductor device according to a preferred embodiment of the present invention, and FIG. 2 is a schematic view of a preferred embodiment of the present invention. A flow chart of a method of monitoring a semiconductor component. In an exemplary embodiment, the monitoring of the semiconductor component 106 is performed by monitoring a plurality of semiconductor components 106 carried by a carrier 104, and performing a change in the number of pre-reaction and post-reaction reactions in a process chamber to monitor the load immediately. The number of semiconductor components 106 on the shelf 104, and the status of the process chamber is immediately removed based on the monitoring data. In an embodiment, the semiconductor component 106 can be a generally common wafer or display glass substrate or the like.

對承載架104上之半導體元件106數量之進行監控時,首先如第2圖之步驟200所示,提供監控設備100,並使監控設備100鄰設於製程機台102的反應室108。反應室108可例如為供進行濕式蝕刻的濕式蝕刻槽、供進行光阻移除的光阻剝除槽、供進行顯影之顯影槽、或濕式清洗槽,因此儲放在反應室108中之處理液110可對應為蝕刻液、去光阻液、顯影液、與例如去離子水與稀釋氫氟酸等清洗液。在一示範實施例中,監控設備100至少包括電荷耦合元件112與處理器114。其中,電荷耦合元件112與處理器114之間可透過導線來予以電性連接,如此一來,處理器114可透過導線來接收電荷耦合元件112所傳送之影像訊號,並對此影像訊號進行處理。如第1圖所示,電荷耦合元件112之鏡頭朝反應室108附近,以利獲得進入反應室108之前與之後的承載架104上所有半導體元件106的影像。When monitoring the number of semiconductor components 106 on the carrier 104, first, as shown in step 200 of FIG. 2, the monitoring device 100 is provided and the monitoring device 100 is disposed adjacent to the reaction chamber 108 of the processing machine 102. The reaction chamber 108 can be, for example, a wet etching bath for wet etching, a photoresist stripping chamber for photoresist removal, a developing tank for developing, or a wet cleaning tank, and thus stored in the reaction chamber 108. The treatment liquid 110 may correspond to an etching solution, a photoresist removal solution, a developing solution, and a cleaning liquid such as deionized water and diluted hydrofluoric acid. In an exemplary embodiment, monitoring device 100 includes at least charge coupled component 112 and processor 114. The charge-coupled component 112 and the processor 114 can be electrically connected through a wire. Thus, the processor 114 can receive the image signal transmitted by the charge-coupled component 112 through the wire and process the image signal. . As shown in FIG. 1, the lens of the charge coupled device 112 faces the vicinity of the reaction chamber 108 to facilitate obtaining images of all of the semiconductor components 106 on the carrier 104 before and after entering the reaction chamber 108.

在一實施例中,監控設備100可依製程需求而選擇性地設置有感測器120,其中此感測器120可直接設置在電荷耦合元件112上或設置在電荷耦合元件112附近,且感測器120可與電荷耦合元件112電性連接。此感測器120可用以感測裝設有半導體元件106之承載架104進入反應室108前、及自反應室108移出後的訊息,並將感測到的訊號傳送至電荷耦合元件112,來通知電荷耦合元件112對裝載有半導體元件106的承載架104進行監控而取得此時之承載架104上所有半導體元件106的影像訊號。在另一實施例中,監控設備100可依實際需求而選擇性地設置有警報器116,其中警報器116可透過導線而與處理器114電性連接,以接收處理器114所傳送之警告訊號。警報器116可例如為可發出聲音、亮光、或同時發出聲音與亮光的元件,以在當承載架104所裝載之半導體元件106的數量於進入反應室108之前與之後有所不同時發出警報,來警告線上工作人員可能有異常狀況發生。在又一較佳實施例中,監控設備100亦可依實際需求而選擇性地設置有顯示器118,其中顯示器118同樣可透過導線而與處理器114電性連接,以接收並顯示從處理器114傳送而來之資訊,例如承載架104上之半導體元件106進入反應室108之前的數量、承載架104上之半導體元件106自反應室108載出之後的數量、或後續進行數量比對步驟所獲得之比對結果。In an embodiment, the monitoring device 100 can be selectively provided with the sensor 120 according to process requirements, wherein the sensor 120 can be directly disposed on the charge coupling element 112 or disposed near the charge coupled element 112, and The detector 120 can be electrically connected to the charge coupled component 112. The sensor 120 can be used to sense the message before and after the carrier 104 carrying the semiconductor component 106 enters the reaction chamber 108, and transmits the sensed signal to the charge coupled component 112. The charge coupled device 112 is notified to monitor the carrier 104 carrying the semiconductor device 106 to obtain image signals of all the semiconductor devices 106 on the carrier 104 at this time. In another embodiment, the monitoring device 100 can be selectively provided with an alarm 116 according to actual needs, wherein the alarm 116 can be electrically connected to the processor 114 through a wire to receive the warning signal transmitted by the processor 114. . The alarm 116 can be, for example, an element that can emit sound, bright light, or both sound and light to alert when the number of semiconductor components 106 loaded by the carrier 104 differs from before entering the reaction chamber 108, To warn the online staff that there may be abnormal conditions. In another preferred embodiment, the monitoring device 100 can also be selectively provided with a display 118 according to actual needs, wherein the display 118 can also be electrically connected to the processor 114 through a wire to receive and display the slave processor 114. The transmitted information, such as the number of semiconductor components 106 on the carrier 104 before entering the reaction chamber 108, the number of semiconductor components 106 on the carrier 104 after being loaded from the reaction chamber 108, or the subsequent number alignment steps are obtained. The result of the comparison.

接下來,將承載架104連同裝載於其上之半導體元件106載入反應室108之前,先進行第一監控步驟,如第2圖之步驟202所述,以取得此時的半導體元件106的數量,其中在此第一監控步驟中較佳係進一步將所取得之半導體元件數量的資訊儲存於處理器114之中,以利後續之比對。在步驟202中,利用監控設備100對承載架104進行第一監控步驟時,感測器120先感測到承載架104將進入反應室108的訊息,而將此訊息傳送至電荷耦合元件112,再利用電荷耦合元件112取得此時承載架104上之所有半導體元件106的影像訊號。接下來,將此影像訊號傳送至處理器114中,當處理器114接收到此影像訊號後,處理器114可將此影像訊號轉換成數位訊號,其中所獲得之數位訊號可表示承載架104載入反應室108之前裝載在承載架104上的所有半導體元件106的數量。此時,所監測到的半導體元件106的數量在此簡稱為第一半導體元件數量。在一實施例中,監測所獲得之第一半導體元件數量可顯示在顯示器118中,以供讀取。Next, before loading the carrier 104 with the semiconductor component 106 loaded thereon into the reaction chamber 108, a first monitoring step is performed, as described in step 202 of FIG. 2, to obtain the number of semiconductor components 106 at this time. Preferably, in the first monitoring step, the obtained information of the number of semiconductor components is further stored in the processor 114 for subsequent comparison. In step 202, when the monitoring device 100 performs the first monitoring step on the carrier 104, the sensor 120 first senses that the carrier 104 will enter the reaction room 108, and transmits the message to the charge coupled device 112. The image signal of all the semiconductor elements 106 on the carrier 104 at this time is obtained by the charge coupled device 112. Then, the image signal is transmitted to the processor 114. After the processor 114 receives the image signal, the processor 114 can convert the image signal into a digital signal, wherein the obtained digital signal can represent the carrier 104 The number of all semiconductor components 106 loaded on the carrier 104 prior to entering the reaction chamber 108. At this time, the number of semiconductor elements 106 that are monitored is referred to herein simply as the number of first semiconductor elements. In an embodiment, the number of first semiconductor components obtained by monitoring can be displayed in display 118 for reading.

而後,將承載架104連同其上所裝載之半導體元件106置入反應室108中,而利用其中所儲放之處理液110來對這些半導體元件106進行處理,例如蝕刻、光阻剝除、顯影或濕式清洗等等。完成半導體元件106之處理程序後,將承載架104與其上之半導體元件106取出反應室108。待承載架104自反應室108中載出後,此時監控方法繼續進行第二監控步驟,如第2圖之步驟204所述,以取得完成處理後之半導體元件106的數量,其中在此第二監控步驟中較佳係進一步將所取得之半導體元件數量的資訊儲存於處理器114之中,以利後續之比對。在步驟204中,利用監控設備100對承載架104進行第二監控步驟時,感測器120同樣先感測到承載架104子反應室108中載出之訊息,而將此訊息傳送至電荷耦合元件112,再利用電荷耦合元件112取得此時承載架104上之所有半導體元件106的影像訊號。接著,將此影像訊號傳送至處理器114中,當處理器114接收到此影像訊號後,處理器114同樣可將此影像訊號轉換成數位訊號,其中所獲得之數位訊號可表示承載架104自反應室108中載出後仍裝載在承載架104上的所有半導體元件106的數量。此時,所監測到的半導體元件106的數量在此簡稱為第二半導體元件數量。在一實施例中,監測所獲得之第二半導體元件數量同樣可顯示在顯示器118中,以供讀取。Then, the carrier 104, together with the semiconductor component 106 loaded thereon, is placed in the reaction chamber 108, and the semiconductor component 106 is processed by the processing liquid 110 stored therein, such as etching, photoresist stripping, and development. Or wet cleaning and so on. After the processing of the semiconductor component 106 is completed, the carrier 104 and the semiconductor component 106 thereon are taken out of the reaction chamber 108. After the carrier 104 is loaded from the reaction chamber 108, the monitoring method continues to perform the second monitoring step, as described in step 204 of FIG. 2, to obtain the number of semiconductor components 106 after completion of processing, wherein Preferably, in the second monitoring step, the obtained information of the number of semiconductor components is further stored in the processor 114 for subsequent comparison. In step 204, when the monitoring device 100 performs the second monitoring step on the carrier 104, the sensor 120 first senses the message carried in the sub-chamber 108 of the carrier 104, and transmits the message to the charge coupling. The component 112, and then the charge coupled component 112, acquires the image signal of all of the semiconductor components 106 on the carrier 104 at this time. Then, the image signal is transmitted to the processor 114. After the processor 114 receives the image signal, the processor 114 can also convert the image signal into a digital signal, wherein the obtained digital signal can represent the carrier 104. The number of all semiconductor components 106 still loaded on the carrier 104 after being carried out in the reaction chamber 108. At this time, the number of semiconductor elements 106 that are monitored is simply referred to herein as the number of second semiconductor elements. In one embodiment, the number of second semiconductor components obtained by monitoring can also be displayed in display 118 for reading.

接著,如第2圖之步驟206所述,進行比對步驟,以比對先前之二監控步驟中所分別獲得之第一半導體元件數量與第二半導體元件數量。在一實施例中,當第一半導體元件數量與第二半導體元件數量之資訊顯示在監控設備100之顯示器118上時,可透過線上工作人員直接比對第一半導體元件數量與第二半導體元件數量,以檢查第一半導體元件數量與第二半導體元件數量是否有差異。然,在一較佳實施例中,可利用處理器114進行此一比對步驟,並可將比對結果的資訊傳送至顯示器118,再利用顯示器118將比對結果顯示在顯示器118的螢幕上。在一較佳實施例中,當比對結果為第一半導體元件數量與第二半導體元件數量不同時,通常係第一半導體元件數量大於第二半導體元件數量,處理器114可傳送警告訊號給警報器116,而警報器116可隨即發出警報來提醒線上工作人員,來進行異常狀況的排除,例如將掉落在反應室108中的半導體元件106或半導體元件106破片自反應室108中移除。Next, as described in step 206 of FIG. 2, a comparison step is performed to compare the number of first semiconductor components and the number of second semiconductor components respectively obtained in the previous two monitoring steps. In an embodiment, when the information of the number of the first semiconductor component and the number of the second semiconductor component is displayed on the display 118 of the monitoring device 100, the number of the first semiconductor component and the second semiconductor component can be directly compared by the line worker. To check if there is a difference between the number of first semiconductor components and the number of second semiconductor components. However, in a preferred embodiment, the processor 114 can be used to perform the comparison step, and the information of the comparison result can be transmitted to the display 118, and the display result can be displayed on the screen of the display 118 by using the display 118. . In a preferred embodiment, when the comparison result is that the number of the first semiconductor components is different from the number of the second semiconductor components, usually the number of the first semiconductor components is greater than the number of the second semiconductor components, and the processor 114 can transmit a warning signal to the alarm. The 116 can be alerted by an alarm to alert the line staff to perform an abnormal condition, such as removing the semiconductor component 106 or semiconductor component 106 that has fallen into the reaction chamber 108 from the reaction chamber 108.

請參照第3圖,在本發明之另一示範實施例中,可同時利用多個監控設備100同時對多個製程機台102進行監控,其中監控設備100之數量較佳係與製程機台102之數量對應,且監控設備100分別對應鄰設於製程機台102,以利用這些監控設備100對應監控由承載架104所承載且欲進入這些製程機台102之反應室108中進行濕式處理的半導體元件106的數量變化。在本實施例中,每個監控設備100對所對應之製程機台102的監控方式如同上述實施例,因此不再贅述。Referring to FIG. 3, in another exemplary embodiment of the present invention, a plurality of processing devices 100 can be simultaneously monitored by using a plurality of monitoring devices 100, wherein the number of monitoring devices 100 is preferably related to the processing machine 102. The monitoring devices 100 are correspondingly disposed adjacent to the processing machine 102, so as to monitor the wet processing of the reaction chambers 108 carried by the carrier 104 and entering the processing stations 102 by using the monitoring devices 100. The number of semiconductor elements 106 varies. In this embodiment, each monitoring device 100 monitors the corresponding processing machine 102 in the same manner as the above embodiment, and therefore will not be described again.

在一實施例中,這些製程機台102可為對半導體元件106進行不同濕式處理的機台,例如蝕刻機台、光阻剝除機台、顯影機台與濕式清洗機台。在另一實施例中,這些製程機台102可為對不同承載架104所承載之半導體元件106進行相同濕式處理的機台,以對不同批之半導體元件106同時進行相同之濕式處理。在本示範實施例中,每個監控設備100包括一顯示器118與一處理器114。在另一實施例中,可多個監控設備100共用一顯示器118與一處理器114。In one embodiment, the process stations 102 can be machines that perform different wet processing on the semiconductor components 106, such as an etching machine, a photoresist stripper, a developing machine, and a wet cleaning machine. In another embodiment, the process stations 102 can be the same wet processing of the semiconductor components 106 carried by the different carriers 104 to simultaneously perform the same wet processing on the different batches of semiconductor components 106. In the exemplary embodiment, each monitoring device 100 includes a display 118 and a processor 114. In another embodiment, a plurality of monitoring devices 100 can share a display 118 and a processor 114.

由上述本發明之實施例可知,本發明之一優點為本發明之半導體元件之監控方法可在半導體元件在製程線上期間,即時監控由一承載架所承載之半導體元件的數量。It is apparent from the above embodiments of the present invention that one of the advantages of the present invention is that the semiconductor component monitoring method of the present invention can monitor the number of semiconductor components carried by a carrier during the semiconductor component on the process line.

由上述本發明之實施例可知,本發明之另一優點就是因為本發明之半導體元件之監控方法可監控半導體元件在一處理程序前與後的數量,而可即時監控半導體元件在處理前後之數量變化,因此線上工作人員可根據監控結果即時排除掉落在反應槽中之半導體元件,而可有效防止掉落之半導體元件損壞後續在同一反應槽中進行處理之半導體元件,進而可大幅提高製程良率。It can be seen from the above embodiments of the present invention that another advantage of the present invention is that the monitoring method of the semiconductor device of the present invention can monitor the number of semiconductor components before and after a processing procedure, and can immediately monitor the number of semiconductor components before and after processing. Change, so the online staff can immediately eliminate the semiconductor components dropped in the reaction tank according to the monitoring results, and can effectively prevent the dropped semiconductor components from damaging the semiconductor components that are subsequently processed in the same reaction tank, thereby greatly improving the process. rate.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何在此技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described above by way of example, it is not intended to be construed as a limitation of the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100...監控設備100. . . Monitoring equipment

102...製程機台102. . . Process machine

104...承載架104. . . Carrier

106...半導體元件106. . . Semiconductor component

108...反應室108. . . Reaction chamber

110...處理液110. . . Treatment fluid

112...電荷耦合元件112. . . Charge coupled device

114...處理器114. . . processor

116...警報器116. . . Alarm

118...顯示器118. . . monitor

120...感測器120. . . Sensor

200...步驟200. . . step

202...步驟202. . . step

204...步驟204. . . step

206...步驟206. . . step

第1圖係繪示依照本發明一較佳實施例的一種半導體元件之監控裝置的示意圖。1 is a schematic view of a monitoring device for a semiconductor device in accordance with a preferred embodiment of the present invention.

第2圖係繪示依照本發明一較佳實施例的一種半導體元件之監控方法的流程圖。2 is a flow chart showing a method of monitoring a semiconductor device in accordance with a preferred embodiment of the present invention.

第3圖係繪示依照本發明另一較佳實施例的一種半導體元件之監控裝置的上視示意圖。3 is a top plan view showing a monitoring device for a semiconductor device in accordance with another preferred embodiment of the present invention.

200...步驟200. . . step

202...步驟202. . . step

204...步驟204. . . step

206...步驟206. . . step

Claims (21)

一種半導體元件之監控方法,以監控欲在一反應室中進行處理且由一承載架所承載之複數個半導體元件的數量,該半導體元件之監控方法至少包括:提供一監控設備,其中該監控設備至少包括一電荷耦合元件、與一處理器與該電荷耦合元件電性連接,以接收該電荷耦合元件所發出之影像訊號;將該承載架載入該反應室前,利用該監控設備對該承載架所承載之該些半導體元件進行一第一監控步驟,以取得該些半導體元件之一第一數量儲存於該處理器中;將該承載架從該反應室載出後,利用該監控設備對該承載架所承載之該些半導體元件進行一第二監控步驟,以取得該些半導體元件之一第二數量儲存於該處理器中;進行一比對步驟,以比對該第一數量與該第二數量;以及當該比對步驟中所比對之該第一數量與該第二數量不同時,表示該些半導體元件之至少一者掉落於該反應室內,而將該些半導體元件之該至少一者自該反應室中移除。 A method of monitoring a semiconductor component for monitoring a quantity of a plurality of semiconductor components to be processed in a reaction chamber and carried by a carrier, the method of monitoring the semiconductor component comprising at least: providing a monitoring device, wherein the monitoring device Having at least one charge-coupled component electrically coupled to a processor and the charge-coupled component to receive an image signal from the charge-coupled component; before the carrier is loaded into the reaction chamber, the load-bearing device is used The semiconductor components carried by the rack perform a first monitoring step to obtain a first quantity of the semiconductor components stored in the processor; after the carrier is loaded from the reaction chamber, the monitoring device is used The semiconductor components carried by the carrier perform a second monitoring step to obtain a second quantity of the semiconductor components stored in the processor; performing an alignment step to compare the first quantity with the a second quantity; and when the first quantity compared to the second quantity in the comparison step is different, indicating the semiconductor elements At least one fall in the reaction chamber, some of the semiconductor element and the at least one of which is removed from the reaction chamber. 如申請專利範圍第1項所述之半導體元件之監控方法,其中該第一監控步驟至少包括:利用該電荷耦合元件取得該承載架上之該些半導體元件之一第一影像訊號;利用該處理器接收該第一影像訊號;以及利用該處理器將該第一影像訊號轉換成一第一數位訊 號,其中該第一數位訊號係表示該第一數量。 The method for monitoring a semiconductor device according to the first aspect of the invention, wherein the first monitoring step comprises: obtaining, by the charge-coupled component, a first image signal of the semiconductor components on the carrier; Receiving the first image signal; and converting the first image signal into a first digital signal by using the processor Number, wherein the first digital signal indicates the first quantity. 如申請專利範圍第1項所述之半導體元件之監控方法,其中該第二監控步驟至少包括:利用該電荷耦合元件取得該承載架上之該些半導體元件之一第二影像訊號;利用該處理器接收該第二影像訊號;以及利用該處理器將該第二影像訊號轉換成一第二數位訊號,其中該第二數位訊號係表示該第二數量。 The method for monitoring a semiconductor device according to the first aspect of the invention, wherein the second monitoring step comprises: obtaining, by the charge-coupled component, a second image signal of the semiconductor components on the carrier; Receiving the second image signal; and converting the second image signal into a second digital signal by using the processor, wherein the second digital signal indicates the second quantity. 如申請專利範圍第1項所述之半導體元件之監控方法,其中該反應室係一濕式蝕刻槽。 The method for monitoring a semiconductor device according to claim 1, wherein the reaction chamber is a wet etching bath. 如申請專利範圍第1項所述之半導體元件之監控方法,其中該反應室係一光阻剝除槽。 The method for monitoring a semiconductor device according to claim 1, wherein the reaction chamber is a photoresist stripping groove. 如申請專利範圍第1項所述之半導體元件之監控方法,其中該反應室係一顯影槽。 The method of monitoring a semiconductor device according to claim 1, wherein the reaction chamber is a developing tank. 如申請專利範圍第1項所述之半導體元件之監控方法,其中該反應室係一清洗槽。 The method for monitoring a semiconductor device according to claim 1, wherein the reaction chamber is a cleaning tank. 如申請專利範圍第1項所述之半導體元件之監控方法,其中該監控設備更至少包括一警報器與該處理器電性 連接,以在該比對步驟中,當該第一數量與該第二數量不同時發出警報。 The method for monitoring a semiconductor device according to claim 1, wherein the monitoring device further comprises at least one alarm and the processor. Connecting, in the comparing step, issuing an alert when the first amount is different from the second amount. 如申請專利範圍第1項所述之半導體元件之監控方法,其中該比對步驟係利用該處理器進行。 The method of monitoring a semiconductor device according to claim 1, wherein the comparing step is performed by using the processor. 如申請專利範圍第9項所述之半導體元件之監控方法,其中該監控設備更至少包括一顯示器,以顯示該第一數量、該第二數量、與該比對步驟之比對結果。 The method for monitoring a semiconductor device according to claim 9, wherein the monitoring device further comprises at least one display for displaying the first quantity, the second quantity, and the comparison result with the comparing step. 如申請專利範圍第1項所述之半導體元件之監控方法,其中該監控設備更至少包括一感測器與該電荷耦合元件電性連接,以感測該承載架載入與載出該反應室的訊息並通知該電荷耦合元件。 The method for monitoring a semiconductor device according to claim 1, wherein the monitoring device further comprises at least one sensor electrically connected to the charge coupled device to sense loading and unloading the carrier Message and inform the charge coupled component. 一種半導體元件之監控方法,以監控欲在一反應室中進行處理且由一承載架所承載之複數個半導體元件的數量,該半導體元件之監控方法至少包括:提供一監控設備,鄰設於該反應室,其中該監控設備至少包括一電荷耦合元件、與一處理器與該電荷耦合元件電性連接;將該承載架載入該反應室前,利用該電荷耦合元件取得該承載架所承載之該些半導體元件之一第一影像訊號;利用該處理器對該第一影像訊號進行處理,以取得該些半導體元件之一第一數量; 將該承載架從該反應室載出後,利用該電荷耦合元件取得該承載架所承載之該些半導體元件之一第二影像訊號;利用該處理器對該第二影像訊號進行處理,以取得該些半導體元件之一第二數量;利用該處理器進行一比對步驟,以比對該第一數量與該第二數量;以及當該比對步驟中所比對之該第一數量與該第二數量不同時,表示該些半導體元件之至少一者掉落於該反應室內,而將該些半導體元件之該至少一者自該反應室中移除。 A method of monitoring a semiconductor component for monitoring a quantity of a plurality of semiconductor components to be processed in a reaction chamber and carried by a carrier, the method for monitoring the semiconductor component includes at least: providing a monitoring device adjacent to the a reaction chamber, wherein the monitoring device comprises at least one charge-coupled component, and is electrically connected to a processor and the charge-coupled component; before the carrier is loaded into the reaction chamber, the carrier is carried by the charge-coupled component a first image signal of the semiconductor components; processing, by the processor, the first image signal to obtain a first quantity of the semiconductor components; After the carrier is carried out from the reaction chamber, the second image signal of the semiconductor components carried by the carrier is obtained by using the charge-coupled component; the second image signal is processed by the processor to obtain a second quantity of the plurality of semiconductor elements; performing a comparison step using the processor to compare the first quantity with the second quantity; and comparing the first quantity to the first quantity in the comparison step When the second number is different, it indicates that at least one of the semiconductor elements is dropped into the reaction chamber, and at least one of the semiconductor elements is removed from the reaction chamber. 如申請專利範圍第12項所述之半導體元件之監控方法,其中利用該處理器對該第一影像訊號進行處理之步驟至少包括將該第一影像訊號轉換成一第一數位訊號來表示該第一數量。 The method for monitoring a semiconductor device according to claim 12, wherein the step of processing the first image signal by using the processor includes at least converting the first image signal into a first digital signal to indicate the first Quantity. 如申請專利範圍第12項所述之半導體元件之監控方法,其中利用該處理器對該第二影像訊號進行處理之步驟至少包括將該第二影像訊號轉換成一第二數位訊號來表示該第二數量。 The method for monitoring a semiconductor device according to claim 12, wherein the step of processing the second image signal by using the processor includes at least converting the second image signal into a second digital signal to indicate the second Quantity. 如申請專利範圍第12項所述之半導體元件之監控方法,其中該反應室係一濕式蝕刻槽。 The method of monitoring a semiconductor device according to claim 12, wherein the reaction chamber is a wet etching bath. 如申請專利範圍第12項所述之半導體元件之監控 方法,其中該反應室係一光阻剝除槽。 Monitoring of semiconductor components as described in claim 12 The method wherein the reaction chamber is a photoresist stripping tank. 如申請專利範圍第12項所述之半導體元件之監控方法,其中該反應室係一顯影槽。 The method of monitoring a semiconductor device according to claim 12, wherein the reaction chamber is a developing tank. 如申請專利範圍第12項所述之半導體元件之監控方法,其中該反應室係一清洗槽。 The method of monitoring a semiconductor device according to claim 12, wherein the reaction chamber is a cleaning tank. 如申請專利範圍第12項所述之半導體元件之監控方法,其中該監控設備更至少包括一警報器與該處理器電性連接,以在該比對步驟中,當該第一數量與該第二數量不同時發出警報。 The method for monitoring a semiconductor device according to claim 12, wherein the monitoring device further comprises at least one alarm electrically connected to the processor, wherein in the comparing step, the first quantity and the first An alarm is issued when the number is different. 如申請專利範圍第12項所述之半導體元件之監控方法,其中該監控設備更至少包括一顯示器,以顯示該第一數量、該第二數量、與該比對步驟之比對結果。 The method for monitoring a semiconductor device according to claim 12, wherein the monitoring device further comprises at least one display for displaying the first quantity, the second quantity, and the comparison result with the comparing step. 如申請專利範圍第12項所述之半導體元件之監控方法,其中該監控設備更至少包括一感測器與該電荷耦合元件電性連接,以感測該承載架載入與載出該反應室的訊息並通知該電荷耦合元件。 The method for monitoring a semiconductor device according to claim 12, wherein the monitoring device further comprises at least one sensor electrically connected to the charge coupled device to sense loading and unloading the carrier Message and inform the charge coupled component.
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