TWI495004B - - Google Patents

Info

Publication number
TWI495004B
TWI495004B TW101129384A TW101129384A TWI495004B TW I495004 B TWI495004 B TW I495004B TW 101129384 A TW101129384 A TW 101129384A TW 101129384 A TW101129384 A TW 101129384A TW I495004 B TWI495004 B TW I495004B
Authority
TW
Taiwan
Application number
TW101129384A
Other languages
Chinese (zh)
Other versions
TW201318063A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201318063A publication Critical patent/TW201318063A/zh
Application granted granted Critical
Publication of TWI495004B publication Critical patent/TWI495004B/zh

Links

TW101129384A 2011-10-19 2012-08-14 改進等離子均勻性和效率的電感耦合等離子裝置 TW201318063A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011103192527A CN102395243A (zh) 2011-10-19 2011-10-19 改进等离子均匀性和效率的电感耦合等离子装置

Publications (2)

Publication Number Publication Date
TW201318063A TW201318063A (zh) 2013-05-01
TWI495004B true TWI495004B (ja) 2015-08-01

Family

ID=45862417

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101129384A TW201318063A (zh) 2011-10-19 2012-08-14 改進等離子均勻性和效率的電感耦合等離子裝置

Country Status (2)

Country Link
CN (1) CN102395243A (ja)
TW (1) TW201318063A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103796413B (zh) * 2012-11-01 2017-05-03 中微半导体设备(上海)有限公司 等离子反应器及制作半导体基片的方法
CN103874314B (zh) * 2012-12-17 2016-10-05 中微半导体设备(上海)有限公司 一种电感耦合等离子装置
CN103997843B (zh) * 2013-02-17 2017-02-15 中微半导体设备(上海)有限公司 一种改进气体分布的等离子体反应器
CN117080062B (zh) * 2023-10-13 2024-01-26 无锡邑文微电子科技股份有限公司 碗状刻蚀的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729890A (ja) * 1993-07-08 1995-01-31 Kokusai Electric Co Ltd プラズマ発生装置
JPH0774155A (ja) * 1993-08-31 1995-03-17 Nec Corp ドライエッチング方法およびドライエッチング装置
JP2001267248A (ja) * 2000-03-15 2001-09-28 Shibaura Mechatronics Corp 半導体処理装置
US20080210378A1 (en) * 2005-07-19 2008-09-04 Dms Co, Ltd. Plasma Reactor Having Multiple Antenna Structure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
TWI241868B (en) * 2002-02-06 2005-10-11 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
US20040118344A1 (en) * 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
KR100561848B1 (ko) * 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
US20050241767A1 (en) * 2004-04-30 2005-11-03 Ferris David S Multi-piece baffle plate assembly for a plasma processing system
JP4904202B2 (ja) * 2006-05-22 2012-03-28 ジーイーエヌ カンパニー リミッテッド プラズマ反応器
JP6097471B2 (ja) * 2007-04-27 2017-03-15 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 環状のバッフル
CN101797394A (zh) * 2009-02-09 2010-08-11 王龙哲 射频电感耦合等离子体灭菌器
CN101805895B (zh) * 2010-03-31 2011-09-07 河北大学 一种螺旋波等离子体增强化学气相沉积装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729890A (ja) * 1993-07-08 1995-01-31 Kokusai Electric Co Ltd プラズマ発生装置
JPH0774155A (ja) * 1993-08-31 1995-03-17 Nec Corp ドライエッチング方法およびドライエッチング装置
JP2001267248A (ja) * 2000-03-15 2001-09-28 Shibaura Mechatronics Corp 半導体処理装置
US20080210378A1 (en) * 2005-07-19 2008-09-04 Dms Co, Ltd. Plasma Reactor Having Multiple Antenna Structure

Also Published As

Publication number Publication date
TW201318063A (zh) 2013-05-01
CN102395243A (zh) 2012-03-28

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