TWI493588B - Fuse - Google Patents

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Publication number
TWI493588B
TWI493588B TW102128822A TW102128822A TWI493588B TW I493588 B TWI493588 B TW I493588B TW 102128822 A TW102128822 A TW 102128822A TW 102128822 A TW102128822 A TW 102128822A TW I493588 B TWI493588 B TW I493588B
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TW
Taiwan
Prior art keywords
fuse
melting point
wiring
metal
point metal
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Application number
TW102128822A
Other languages
Chinese (zh)
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TW201409520A (en
Inventor
Shinichiro Banba
Original Assignee
Murata Manufacturing Co
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Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of TW201409520A publication Critical patent/TW201409520A/en
Application granted granted Critical
Publication of TWI493588B publication Critical patent/TWI493588B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/04Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/041Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
    • H01H85/044General constructions or structure of low voltage fuses, i.e. below 1000 V, or of fuses where the applicable voltage is not specified
    • H01H85/045General constructions or structure of low voltage fuses, i.e. below 1000 V, or of fuses where the applicable voltage is not specified cartridge type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/04Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/05Component parts thereof
    • H01H85/055Fusible members
    • H01H85/08Fusible members characterised by the shape or form of the fusible member
    • H01H85/11Fusible members characterised by the shape or form of the fusible member with applied local area of a metal which, on melting, forms a eutectic with the main material of the fusible member, i.e. M-effect devices

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  • Fuses (AREA)

Description

保險絲fuse

本發明係關於一種保險絲。The present invention relates to a fuse.

以往,嘗試對電子零件連接保險絲以保護電子零件免於受到過電流之影響。例如,在專利文獻1,作為保險絲之一例,記載有具備配置在絕緣基板上之第1及第2電極部、將第1電極部與第2電極部加以連接之金屬配線部、及配置在金屬配線部之一部分之上之低熔點金屬部之保險絲。In the past, attempts were made to connect fuses to electronic components to protect electronic components from overcurrent. For example, Patent Document 1 discloses, as an example of a fuse, a first wiring portion and a second electrode portion disposed on an insulating substrate, a metal wiring portion connecting the first electrode portion and the second electrode portion, and a metal portion. A fuse of a low melting point metal portion over one portion of the wiring portion.

專利文獻1:日本特開2012-18777號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2012-18777

然而,在專利文獻1記載之保險絲,在金屬配線部之上設有具有導電性之低熔點金屬部,因此金屬配線部之相對電阻較低,即使過電流流過亦不易發熱。因此,在專利文獻1記載之保險絲具有不易斷線、亦即無法確實地遮斷過電流之情形之問題。However, in the fuse disclosed in Patent Document 1, since the metal wiring portion is provided with a conductive low-melting metal portion, the relative resistance of the metal wiring portion is low, and heat is less likely to occur even if an overcurrent flows. Therefore, the fuse described in Patent Document 1 has a problem that it is difficult to break the wire, that is, the current cannot be reliably blocked.

本發明之目的在於提供一種可確實地遮斷過電流之保險絲。It is an object of the present invention to provide a fuse that can reliably interrupt an overcurrent.

本發明之保險絲具備絕緣性基板、配線、低熔點金屬部、及絕緣層。配線係配置在絕緣性基板之一主面上。低熔點金屬部係設在配線之上。低熔點金屬部具有較配線低之熔點。低熔點金屬部在成為熔液時使配線熔解。絕緣層係配置在配線與低熔點金屬部之間。The fuse of the present invention includes an insulating substrate, a wiring, a low melting point metal portion, and an insulating layer. The wiring system is disposed on one main surface of the insulating substrate. The low melting point metal portion is provided on the wiring. The low melting point metal portion has a lower melting point than the wiring. The low melting point metal portion melts the wiring when it becomes a molten metal. The insulating layer is disposed between the wiring and the low melting point metal portion.

本發明之保險絲之某特定形態中,絕緣層之熔點較低熔點金 屬部之熔點高。In a particular form of the fuse of the present invention, the melting point of the insulating layer is lower than the melting point of gold The melting point of the genus is high.

本發明之保險絲之另一特定形態中,絕緣層之熔點為180℃~350℃。In another specific form of the fuse of the present invention, the insulating layer has a melting point of from 180 ° C to 350 ° C.

本發明之保險絲之再一特定形態中,絕緣層係由熱塑性樹脂構成。In still another specific aspect of the fuse of the present invention, the insulating layer is made of a thermoplastic resin.

本發明之保險絲之又一特定形態中,保險絲進一步具備覆蓋低熔點金屬部且具有較低熔點金屬部之熔點高之熔點之第2絕緣層。In still another specific aspect of the fuse of the present invention, the fuse further includes a second insulating layer that covers the low melting point metal portion and has a melting point of a lower melting point metal portion.

本發明之保險絲之又一特定形態中,保險絲進一步具備加熱低熔點金屬部之發熱體。In still another specific aspect of the fuse of the present invention, the fuse further includes a heating element that heats the low melting point metal portion.

本發明之保險絲之又一特定形態中,低熔點金屬部以Sn為主成分。In still another specific form of the fuse of the present invention, the low melting point metal portion contains Sn as a main component.

本發明之保險絲之又一特定形態中,絕緣層係設在配線與低熔點金屬部重疊部分之整體。In still another specific aspect of the fuse of the present invention, the insulating layer is provided integrally with the portion where the wiring and the low-melting-point metal portion overlap.

根據本發明,可提供可確實地遮斷過電流之保險絲。According to the present invention, it is possible to provide a fuse that can reliably interrupt an overcurrent.

1,1a,1b‧‧‧保險絲1,1a, 1b‧‧‧Fuse

2‧‧‧第2電極層2‧‧‧2nd electrode layer

3‧‧‧第1電極層3‧‧‧1st electrode layer

11‧‧‧第1端子11‧‧‧1st terminal

12‧‧‧第2端子12‧‧‧2nd terminal

13‧‧‧配線13‧‧‧Wiring

13a,13b‧‧‧保險絲電極部13a, 13b‧‧‧Fuse electrode

13c‧‧‧連接點13c‧‧‧ connection point

14‧‧‧第3端子14‧‧‧3rd terminal

15‧‧‧發熱體15‧‧‧heating body

16‧‧‧第4端子16‧‧‧4th terminal

20‧‧‧絕緣性基板20‧‧‧Insulating substrate

20a‧‧‧第1主面20a‧‧‧1st main face

20b‧‧‧第2主面20b‧‧‧2nd main face

21~24‧‧‧電極21~24‧‧‧electrode

25,27,29,30‧‧‧側面電極25,27,29,30‧‧‧side electrode

26,28‧‧‧通孔電極26,28‧‧‧through hole electrode

31,32‧‧‧配線31,32‧‧‧Wiring

35‧‧‧電極層35‧‧‧electrode layer

36‧‧‧絕緣層36‧‧‧Insulation

36a‧‧‧貫通孔36a‧‧‧through holes

37‧‧‧電極37‧‧‧Electrode

38‧‧‧高熱傳導體38‧‧‧High thermal conductor

41,42‧‧‧低熔點金屬部41,42‧‧‧Low-melting metal parts

51,52‧‧‧絕緣層51,52‧‧‧Insulation

61~64‧‧‧金屬膜61~64‧‧‧Metal film

70‧‧‧保護層70‧‧‧Protective layer

80‧‧‧第2絕緣層80‧‧‧2nd insulation layer

圖1係本發明一實施形態之保險絲之概略俯視圖。Fig. 1 is a schematic plan view of a fuse according to an embodiment of the present invention.

圖2係本發明一實施形態之保險絲之概略仰視圖。Fig. 2 is a schematic bottom view of a fuse according to an embodiment of the present invention.

圖3係圖1之線III-III之概略剖面圖。Figure 3 is a schematic cross-sectional view taken along line III-III of Figure 1.

圖4係圖1之線IV-IV之概略剖面圖。Figure 4 is a schematic cross-sectional view taken along line IV-IV of Figure 1.

圖5係圖1之線V-V之概略剖面圖。Figure 5 is a schematic cross-sectional view taken along line V-V of Figure 1.

圖6係用以說明本發明一實施形態之第2電極層之形狀之概略俯視圖。Fig. 6 is a schematic plan view showing the shape of a second electrode layer according to an embodiment of the present invention.

圖7係用以說明本發明一實施形態之第1電極層及發熱體之形狀之概略俯視圖。Fig. 7 is a schematic plan view showing the shape of a first electrode layer and a heat generating body according to an embodiment of the present invention.

圖8係本發明一實施形態之保險絲之概略電路圖。Fig. 8 is a schematic circuit diagram of a fuse according to an embodiment of the present invention.

圖9係第1變形例之保險絲之概略剖面圖。Fig. 9 is a schematic cross-sectional view showing a fuse according to a first modification.

圖10係第2變形例之保險絲之概略剖面圖。Fig. 10 is a schematic cross-sectional view showing a fuse according to a second modification.

以下,說明實施本發明之較佳形態之一例。然而,下述實施形態僅為例示。本發明並不限於下述實施形態。Hereinafter, an example of a preferred embodiment for carrying out the invention will be described. However, the following embodiments are merely illustrative. The present invention is not limited to the following embodiments.

又,在實施形態等參照之各圖式中,實質上具有相同功能之構件係以相同符號來參照。又,在實施形態等參照之圖式係以示意方式記載。圖式所描繪之物體尺寸之比率等會有與現實物體尺寸之比率等不同之情形。在圖式彼此間亦會有物體尺寸之比率等不同之情形。具體之物體尺寸之比率等應參酌以下說明來判斷。In the drawings, the components having substantially the same functions are referred to by the same reference numerals in the drawings. Further, the drawings referred to in the embodiments and the like are described in a schematic manner. The ratio of the size of the object depicted in the drawing may be different from the ratio of the size of the actual object. There are also cases where the ratio of the size of the objects differs from each other in the drawings. The ratio of the specific object size should be judged by considering the following instructions.

圖1係本實施形態之保險絲之概略俯視圖。圖2係本實施形態之保險絲之概略仰視圖。圖3係圖1之線III-III之概略剖面圖。圖4係圖1之線IV-IV之概略剖面圖。圖5係圖1之線V-V之概略剖面圖。圖6係用以說明本實施形態之第2電極層之形狀之概略俯視圖。圖7係用以說明本實施形態之第1電極層及發熱體之形狀之概略俯視圖。圖8係本實施形態之保險絲之概略電路圖。此外,圖6及圖7中,省略位於說明對象之構件上之構件之描繪。Fig. 1 is a schematic plan view of a fuse of the embodiment. Fig. 2 is a schematic bottom view of the fuse of the embodiment. Figure 3 is a schematic cross-sectional view taken along line III-III of Figure 1. Figure 4 is a schematic cross-sectional view taken along line IV-IV of Figure 1. Figure 5 is a schematic cross-sectional view taken along line V-V of Figure 1. Fig. 6 is a schematic plan view for explaining the shape of the second electrode layer of the embodiment. Fig. 7 is a schematic plan view for explaining the shape of the first electrode layer and the heat generating body of the embodiment. Fig. 8 is a schematic circuit diagram of a fuse of the embodiment. In addition, in FIGS. 6 and 7, the drawing of the member located in the member to be described is omitted.

如圖8所示,保險絲1具有連接於第1端子11與第2端子12之間之配線13。在配線13串聯有保險絲電極部13a,13b。此處,保險絲 電極部13a,13b,係在過電流流過保險絲1時或使保險絲產生功能之訊號輸入保險絲1時熔斷以使第1端子11與第2端子12之間絕緣之部分。例如,若過電流流過第1端子11與第2端子12之間,則保險絲電極部13a,13b之至少一方熔斷。藉此,使第1端子11與第2端子12絕緣。因此,保險絲1作用為偵測過電流且配線13自動地切斷之被動元件。此外,配線13之厚度可為例如5μm~20μm程度。As shown in FIG. 8, the fuse 1 has a wiring 13 connected between the first terminal 11 and the second terminal 12. The fuse electrode portions 13a and 13b are connected in series to the wiring 13. Here, the fuse The electrode portions 13a and 13b are portions that are insulated to insulate between the first terminal 11 and the second terminal 12 when an overcurrent flows through the fuse 1 or when a signal for causing a function of the fuse is input to the fuse 1. For example, when an overcurrent flows between the first terminal 11 and the second terminal 12, at least one of the fuse electrode portions 13a and 13b is blown. Thereby, the first terminal 11 and the second terminal 12 are insulated. Therefore, the fuse 1 functions as a passive component that detects an overcurrent and the wiring 13 is automatically cut. Further, the thickness of the wiring 13 may be, for example, about 5 μm to 20 μm.

保險絲電極部13a與保險絲電極部13b之間之連接點13c係連接於第4端子16。在第3端子14與連接點13c之間設有由電阻構成之發熱體15。在對第3端子14與第1及第2端子11,12之至少一方之間賦予電力時,發熱體15會發熱。藉此,保險絲電極部13a與保險絲電極部13b中之至少一方熔斷,使第1端子11與第2端子12絕緣。因此,保險絲1亦作用為偵測過電流且主動地切斷配線13之主動元件。此外,本發明之保險絲僅作用為被動元件亦可,僅作用為主動元件亦可。The connection point 13c between the fuse electrode portion 13a and the fuse electrode portion 13b is connected to the fourth terminal 16. A heating element 15 composed of a resistor is provided between the third terminal 14 and the connection point 13c. When electric power is applied between at least one of the third terminal 14 and the first and second terminals 11 and 12, the heating element 15 generates heat. Thereby, at least one of the fuse electrode portion 13a and the fuse electrode portion 13b is blown, and the first terminal 11 and the second terminal 12 are insulated. Therefore, the fuse 1 also functions to detect an overcurrent and actively cut off the active components of the wiring 13. In addition, the fuse of the present invention can only function as a passive component, and can only function as an active component.

接著,參照圖1~圖7詳細說明保險絲1之具體構成。Next, a specific configuration of the fuse 1 will be described in detail with reference to FIGS. 1 to 7.

如圖1~圖5所示,保險絲1具備絕緣性基板20。絕緣性基板20可藉由例如鋁基板等陶瓷基板或樹脂基板等構成。絕緣性基板20為在內部具有配線之多層基板亦可。As shown in FIGS. 1 to 5, the fuse 1 includes an insulating substrate 20. The insulating substrate 20 can be formed of a ceramic substrate such as an aluminum substrate or a resin substrate. The insulating substrate 20 may be a multilayer substrate having wiring therein.

絕緣性基板20具有第1主面20a與第2主面20b。如圖2所示,在第2主面20b上配置有第1~第4端子11,12,14,16。第4端子16係連接於圖8所示之發熱體15與連接點13c之間之連接點。此外,第1~第4端子11,12,14,16分別可藉由Ag、AgPt、AgPd、Cu等適當之導電材料構成。第1~第4端子11,12,14,16之厚度可為例如10μm~20μm程度。The insulating substrate 20 has a first main surface 20a and a second main surface 20b. As shown in FIG. 2, the first to fourth terminals 11, 12, 14, and 16 are disposed on the second main surface 20b. The fourth terminal 16 is connected to a connection point between the heat generating body 15 and the connection point 13c shown in FIG. Further, each of the first to fourth terminals 11, 12, 14, and 16 may be made of a suitable conductive material such as Ag, AgPt, AgPd, or Cu. The thickness of the first to fourth terminals 11, 12, 14, 16 may be, for example, about 10 μm to 20 μm.

如圖1及圖6所示,在第1主面20a上設有電極21~24。電極21係藉由側面電極25及通孔電極26(參照圖2)與第1端子11連接。電極22係藉由側面電極27及通孔電極28與第2端子12連接。電極23係藉由側面電極29連接於第3端子14。電極24係藉由側面電極30連接於第4端子16。此外,電極21~24分別可藉由Ag、AgPt、AgPd、Cu等適當之導電材料構成。As shown in FIGS. 1 and 6, electrodes 21 to 24 are provided on the first main surface 20a. The electrode 21 is connected to the first terminal 11 by the side surface electrode 25 and the via electrode 26 (see FIG. 2). The electrode 22 is connected to the second terminal 12 via the side electrode 27 and the via electrode 28. The electrode 23 is connected to the third terminal 14 via the side surface electrode 29. The electrode 24 is connected to the fourth terminal 16 via the side surface electrode 30. Further, the electrodes 21 to 24 may each be formed of a suitable conductive material such as Ag, AgPt, AgPd or Cu.

如圖7所示,在主面20a上設有連接於電極23與電極24之間之發熱體15。電極23與發熱體15係藉由配線31連接。電極24與發熱體15係藉由配線32連接。發熱體15係藉由絕緣性基板20支承。此外,發熱體15可藉由例如由RuO2 、AgPd等構成之電阻發熱體構成。As shown in Fig. 7, a heat generating body 15 connected between the electrode 23 and the electrode 24 is provided on the main surface 20a. The electrode 23 and the heating element 15 are connected by a wire 31. The electrode 24 and the heating element 15 are connected by a wire 32. The heating element 15 is supported by the insulating substrate 20. Further, the heating element 15 can be constituted by, for example, a resistance heating body composed of RuO 2 , AgPd or the like.

在電極23,24、發熱體15及配線31,32上設有電極層35(參照圖3~圖6)。在電極層35與電極23,24及配線31,32之間配置有絕緣層36。本實施形態中,絕緣層36係設在配線31,32與低熔點金屬部41,42重疊部分之整體。然而,本發明中,例如,在絕緣層形成有開口等,將配線與低熔點金屬部連接成配線之電阻整體不會過度降低之程度亦可。如圖3及圖5所示,在絕緣層36設有貫通孔36a。此貫通孔36a係連接於發熱體15與配線13(詳細而言,連接點13c)之各個。貫通孔36a,在中心軸延伸方向,直徑設成大致一定亦可,設成錐狀亦可。貫通孔36a,例如,朝向絕緣性基板20側設成朝向前端漸細之錐狀亦可。此外,絕緣層36之厚度可為例如15μm~30μm程度。Electrode layers 35 are provided on the electrodes 23, 24, the heating element 15, and the wirings 31, 32 (see Figs. 3 to 6). An insulating layer 36 is disposed between the electrode layer 35 and the electrodes 23 and 24 and the wirings 31 and 32. In the present embodiment, the insulating layer 36 is provided integrally with the overlapping portions of the wirings 31, 32 and the low-melting-point metal portions 41, 42. However, in the present invention, for example, an opening or the like is formed in the insulating layer, and the wiring and the low-melting-point metal portion are connected so that the entire resistance of the wiring does not excessively decrease. As shown in FIGS. 3 and 5, a through hole 36a is provided in the insulating layer 36. The through hole 36a is connected to each of the heating element 15 and the wiring 13 (in detail, the connection point 13c). The through hole 36a may have a diameter that is substantially constant in the direction in which the central axis extends, and may be formed in a tapered shape. For example, the through hole 36a may be tapered toward the tip end toward the insulating substrate 20 side. Further, the thickness of the insulating layer 36 may be, for example, about 15 μm to 30 μm.

如圖5及圖6所示,電極層35包含將電極21與電極22加以連接之配線13。配線13包含保險絲電極部13a與保險絲電極部13b。保 險絲電極部13a與保險絲電極部13b之連接點13c、與電極24係藉由圖3及圖6所示之電極37連接。又,連接點13c係透過配置在貫通孔36a內之高熱傳導體38與發熱體15連接。高熱傳導體38之熱傳導率較絕緣層36之熱傳導率高。高熱傳導體38可藉由例如金屬構成。本實施形態中,高熱傳導體38與配線13係一體設置。此情形,可容易設置高熱傳導體38。As shown in FIGS. 5 and 6, the electrode layer 35 includes a wiring 13 that connects the electrode 21 and the electrode 22. The wiring 13 includes a fuse electrode portion 13a and a fuse electrode portion 13b. Guarantee The connection point 13c of the fuse electrode portion 13a and the fuse electrode portion 13b and the electrode 24 are connected to the electrode 37 shown in Figs. 3 and 6 . Further, the connection point 13c is connected to the heating element 15 through the high heat conductor 38 disposed in the through hole 36a. The thermal conductivity of the high thermal conductor 38 is higher than the thermal conductivity of the insulating layer 36. The high thermal conductor 38 can be constructed of, for example, a metal. In the present embodiment, the high thermal conductor 38 is integrally provided with the wiring 13. In this case, the high thermal conductor 38 can be easily disposed.

此外,電極層35之厚度可為例如5μm~20μm程度。Further, the thickness of the electrode layer 35 may be, for example, about 5 μm to 20 μm.

如圖1、圖4及圖5所示,在配線13之各保險絲電極部13a,13b之上設有低熔點金屬部41,42。低熔點金屬部41,42由具有較配線13低之熔點且在成為熔液時使配線13熔解之低熔點金屬構成。低熔點金屬以例如Sn為主成分亦可。作為上述低熔點金屬之具體例,可舉出例如SnSb、SnCu、SnAg、SnAgCu、SnCuNi等Sn合金或BiAg、BiSbBiZn等Bi合金。低熔點金屬部41,42之厚度可為例如0.1mm~0.5mm程度。As shown in FIGS. 1, 4, and 5, low melting point metal portions 41, 42 are provided on the fuse electrode portions 13a, 13b of the wiring 13. The low-melting-point metal portions 41 and 42 are made of a low-melting-point metal having a lower melting point than the wiring 13 and melting the wiring 13 when the melt is formed. The low melting point metal may be, for example, Sn as a main component. Specific examples of the low melting point metal include a Sn alloy such as SnSb, SnCu, SnAg, SnAgCu, and SnCuNi, or a Bi alloy such as BiAg or BiSbBiZn. The thickness of the low melting point metal portions 41, 42 may be, for example, about 0.1 mm to 0.5 mm.

此外,在低熔點金屬部41,42上設有助焊劑層等之保護膜或氧化防止膜等以覆蓋低熔點金屬部41,42之至少一部分亦可。Further, a protective film such as a flux layer or an oxidation preventing film or the like may be provided on the low-melting-point metal portions 41, 42 to cover at least a part of the low-melting-point metal portions 41, 42.

如圖4及圖5所示,在保險絲1,在配線13與低熔點金屬部41,42之間配置有絕緣層51,52。絕緣層51,52之熔點較低熔點金屬部41,42之熔點高。絕緣層51,52之熔點,較佳為180℃~350℃,更佳為220℃~320℃。絕緣層51,52可藉由適當之絕緣材料構成,但較佳為例如藉由熱塑性樹脂構成。作為為了構成絕緣層51,52而較佳使用之熱塑性樹脂,可舉出例如聚對苯二甲酸乙二酯(PET、熔點264℃)、聚對苯二甲酸丁二醇酯(PBT,熔點232℃)等聚酯系樹脂、聚氯乙烯(熔點180℃)等乙烯系樹脂、聚苯乙烯(熔點230℃)等聚苯乙烯系樹脂、尼龍6(註冊商標、熔點225℃)或尼龍66(註冊 商標、熔點267℃)等聚醯胺系樹脂、聚碳酸酯(熔點250℃)等聚碳酸酯系樹脂、聚氟化二乙烯(熔點210℃)、三氟氯乙烯(熔點220℃)等氟系樹脂等。絕緣層51,52之厚度可為例如10μm~200μm,較佳為20~150μm程度。As shown in FIGS. 4 and 5, in the fuse 1, the insulating layers 51, 52 are disposed between the wiring 13 and the low-melting-point metal portions 41, 42. The melting points of the insulating layers 51, 52 are lower than those of the melting point metal portions 41, 42. The melting point of the insulating layers 51, 52 is preferably from 180 ° C to 350 ° C, more preferably from 220 ° C to 320 ° C. The insulating layers 51, 52 may be formed of a suitable insulating material, but are preferably made of, for example, a thermoplastic resin. The thermoplastic resin preferably used for constituting the insulating layers 51 and 52 may, for example, be polyethylene terephthalate (PET, melting point: 264 ° C) or polybutylene terephthalate (PBT, melting point 232). °C), such as a polyester resin, a vinyl resin such as polyvinyl chloride (melting point: 180 ° C), a polystyrene resin such as polystyrene (melting point: 230 ° C), nylon 6 (registered trademark, melting point: 225 ° C), or nylon 66 ( registered Polyvinylamine resin such as trademark, melting point 267 ° C), polycarbonate resin such as polycarbonate (melting point: 250 ° C), polyfluorinated diethylene (melting point 210 ° C), chlorotrifluoroethylene (melting point 220 ° C) and other fluorine Resin or the like. The thickness of the insulating layers 51, 52 may be, for example, about 10 μm to 200 μm, preferably about 20 to 150 μm.

如圖6所示,在絕緣性基板20上,在絕緣層51,52之外側配置有金屬膜61~64。此金屬膜61~64,較佳為,由例如Ag、AgPt、AgPd、Cu等對低熔點金屬部41,42之熔液之濕潤性較高之金屬或合金構成。再者,金屬膜61~64,較佳為,不易在低熔點金屬部41,42之熔液熔解,尤其是由AgPt、AgPd等構成為佳。As shown in FIG. 6, on the insulating substrate 20, metal films 61 to 64 are disposed on the outer sides of the insulating layers 51, 52. The metal films 61 to 64 are preferably made of a metal or an alloy having a high wettability to a molten metal of the low-melting-point metal portions 41 and 42 by, for example, Ag, AgPt, AgPd, or Cu. Further, it is preferable that the metal films 61 to 64 are not easily melted in the molten metal of the low-melting-point metal portions 41, 42, and particularly preferably composed of AgPt or AgPd.

金屬膜61~64,在配線13之寬度方向,設在絕緣層51,52之兩側。本實施形態中,具體而言,在配線13之寬度方向,金屬膜61,62設在絕緣層51之兩側。在配線13之寬度方向,金屬膜61,62設成夾著保險絲電極部13a。低熔點金屬部41係設成與金屬膜61,62接觸。具體而言,低熔點金屬部41從金屬膜61上跨越絕緣層51及金屬膜62上而設置。The metal films 61 to 64 are provided on both sides of the insulating layers 51 and 52 in the width direction of the wiring 13. In the present embodiment, specifically, the metal films 61, 62 are provided on both sides of the insulating layer 51 in the width direction of the wiring 13. In the width direction of the wiring 13, the metal films 61, 62 are provided so as to sandwich the fuse electrode portion 13a. The low melting point metal portion 41 is in contact with the metal films 61, 62. Specifically, the low-melting-point metal portion 41 is provided from the metal film 61 across the insulating layer 51 and the metal film 62.

在配線13之寬度方向,金屬膜63,64設在絕緣層52之兩側。在配線13之寬度方向,金屬膜63,64設成夾著保險絲電極部13b。低熔點金屬部42係設成與金屬膜63,64接觸。具體而言,低熔點金屬部42從金屬膜63上跨越絕緣層52及金屬膜64上而設置。In the width direction of the wiring 13, the metal films 63, 64 are provided on both sides of the insulating layer 52. In the width direction of the wiring 13, the metal films 63, 64 are provided so as to sandwich the fuse electrode portion 13b. The low melting point metal portion 42 is in contact with the metal films 63, 64. Specifically, the low-melting-point metal portion 42 is provided from the metal film 63 across the insulating layer 52 and the metal film 64.

此外,金屬膜61~64由複數個金屬膜之積層體構成亦可。構成金屬膜61~64之複數個金屬膜包含熔點不同之複數種類之金屬膜亦可。金屬膜61~64具有第1金屬膜、與設在第1金屬膜上且熔點較第1金屬膜低之第2金屬膜亦可。此情形,第2金屬膜到達絕緣膜51,52上亦可。Further, the metal films 61 to 64 may be composed of a laminate of a plurality of metal films. The plurality of metal films constituting the metal films 61 to 64 may include a plurality of metal films having different melting points. The metal films 61 to 64 may have a first metal film or a second metal film which is provided on the first metal film and has a lower melting point than the first metal film. In this case, the second metal film may reach the insulating films 51, 52.

金屬膜61~64之厚度可為例如20μm~40μm程度。The thickness of the metal films 61 to 64 may be, for example, about 20 μm to 40 μm.

如圖1所示,設有包圍設有低熔點金屬部41之區域與設有低熔點金屬部42之區域之各個之保護層70。藉由設置此保護層70,可有效抑制低熔點金屬之熔液往預期外方向濕潤擴散。保護層70之厚度可為例如10μm~20μm程度。As shown in FIG. 1, a protective layer 70 is provided which surrounds each of the region in which the low-melting-point metal portion 41 is provided and the region in which the low-melting-point metal portion 42 is provided. By providing the protective layer 70, it is possible to effectively suppress the wet diffusion of the molten metal of the low melting point metal in the intended outward direction. The thickness of the protective layer 70 may be, for example, about 10 μm to 20 μm.

接著,說明保險絲1之保險絲功能之產生。Next, the generation of the fuse function of the fuse 1 will be described.

例如,若過電流在第1端子11與第2端子12之間流動,則設成細寬之保險絲電極部13a,13b發熱。藉由此發熱,低熔點金屬部41,42被加熱、熔解。又,絕緣層51,52亦熔解,低熔點金屬之熔液與保險絲電極部13a,13b接觸。其結果,保險絲電極部13a,13b在低熔點金屬之熔液熔解,配線13熔斷。藉此,保險絲功能產生。For example, when an overcurrent flows between the first terminal 11 and the second terminal 12, the fuse electrode portions 13a and 13b which are thin and wide are heated. By this heat generation, the low-melting-point metal portions 41, 42 are heated and melted. Further, the insulating layers 51, 52 are also melted, and the molten metal of the low melting point metal is in contact with the fuse electrode portions 13a, 13b. As a result, the fuse electrode portions 13a and 13b are melted in the molten metal of the low melting point metal, and the wiring 13 is melted. Thereby, the fuse function is generated.

在保險絲1,在配線13與低熔點金屬部41,42之間設有絕緣層51,52。藉由此絕緣層51,52使配線13與低熔點金屬部41,42電氣絕緣。因此,和低熔點金屬部與配線電氣連接之情形不同,配線13之相對電阻較大。因此,在過電流在第1端子11與第2端子12之間流動時,配線13容易發熱。是以,在保險絲1,在過電流在第1端子11與第2端子12之間流動時,保險絲功能高確率產生。In the fuse 1, an insulating layer 51, 52 is provided between the wiring 13 and the low-melting-point metal portions 41, 42. The wiring 13 is electrically insulated from the low melting point metal portions 41, 42 by the insulating layers 51, 52. Therefore, unlike the case where the low-melting-point metal portion is electrically connected to the wiring, the relative resistance of the wiring 13 is large. Therefore, when an overcurrent flows between the first terminal 11 and the second terminal 12, the wiring 13 is likely to generate heat. Therefore, in the fuse 1, when an overcurrent flows between the first terminal 11 and the second terminal 12, the fuse function is highly accurate.

又,在保險絲1,絕緣層51,52之熔點較低熔點金屬部41,42之熔點高。因此,藉由使低熔點金屬部41,42與配線13接觸直至絕緣層51,52熔解為止,可有效抑制配線13之相對電阻降低。是以,保險絲功能更高確率產生。Further, in the fuse 1, the melting points of the insulating layers 51, 52 are lower, and the melting points of the metal portions 41, 42 have a higher melting point. Therefore, by bringing the low-melting-point metal portions 41, 42 into contact with the wiring 13 until the insulating layers 51, 52 are melted, the relative resistance of the wiring 13 can be effectively suppressed from being lowered. Therefore, the fuse function is generated at a higher accuracy rate.

從保險絲功能更高確率產生之觀點觀之,絕緣層51,52之熔點較低熔點金屬部41,42之熔點高10℃以上為佳,高20℃以上更佳。然而, 若絕緣層51,52之熔點較低熔點金屬部41,42之熔點高過多,則絕緣層51,52不易熔解,低熔點金屬之熔液與配線13不易接觸,反而會有保險絲功能不易產生之情形。是以,絕緣層51,52之熔點,較佳為低熔點金屬部41,42之熔點+50℃以下,更佳為低熔點金屬部41,42之熔點+30℃以下。具體而言,絕緣層51,52之熔點,較佳為180℃~350℃之範圍內,更佳為220℃~320℃之範圍內,最佳為260℃~280℃之範圍內。From the viewpoint of the higher accuracy of the fuse function, the melting points of the insulating layers 51, 52 are lower. The melting point of the melting point metal portions 41, 42 is preferably 10 ° C or more, and more preferably 20 ° C or higher. however, If the melting points of the insulating layers 51, 52 are lower than the melting point of the melting point metal portions 41, 42 is too high, the insulating layers 51, 52 are not easily melted, and the molten metal of the low melting point metal is not easily contacted with the wiring 13, but the fuse function is not easily generated. situation. Therefore, the melting points of the insulating layers 51, 52 are preferably the melting point of the low melting point metal portions 41, 42 + 50 ° C or lower, more preferably the melting point of the low melting point metal portions 41, 42 + 30 ° C or lower. Specifically, the melting points of the insulating layers 51, 52 are preferably in the range of 180 ° C to 350 ° C, more preferably in the range of 220 ° C to 320 ° C, and most preferably in the range of 260 ° C to 280 ° C.

然而,為了藉由低熔點金屬之熔液確實地熔斷配線13,將低熔點金屬之熔液預先配置在能確實地與配線13接觸之區域是重要的。然而,在低熔點金屬部41,42之下方設有低熔點金屬之熔液之濕潤性較低之絕緣層51,52,因此低熔點金屬之熔液容易位移。因此,在保險絲1,在絕緣性基板20上,在絕緣層51,52之外側配置有金屬膜61~64。藉由低熔點金屬之熔液與金屬膜61~64接觸,低熔點金屬之熔液被金屬膜61~64捕捉。是以,在保險絲1,能將低熔點金屬之熔液預先配置在能確實地與配線13接觸之區域。是以,在保險絲1,保險絲功能高確率產生。However, in order to reliably melt the wiring 13 by the molten metal of the low melting point metal, it is important to arrange the molten metal of the low melting point metal in advance in a region where the wiring 13 can be surely contacted. However, the insulating layers 51, 52 having a low wettability of the molten metal of the low melting point metal are provided below the low melting point metal portions 41, 42 so that the molten metal of the low melting point metal is easily displaced. Therefore, in the fuse 1, the metal films 61 to 64 are disposed on the insulating substrate 20 outside the insulating layers 51, 52. The molten metal of the low melting point metal is contacted by the metal films 61 to 64 by the molten metal of the low melting point metal, and the molten metal of the low melting point metal is captured by the metal films 61 to 64. Therefore, in the fuse 1, the molten metal of the low melting point metal can be placed in advance in a region where the wiring 13 can be reliably contacted. Therefore, in the fuse 1, the fuse function is generated at a high rate.

從低熔點金屬之熔液被金屬膜61~64確實地捕捉之觀點觀之,較佳為,低熔點金屬部41,42設成與金屬膜61~64接觸。較佳為,在配線13之寬度方向,金屬膜61~64設在絕緣膜51,52之兩側。較佳為,在配線13之寬度方向,金屬膜61~64設在保險絲電極部13a,13b之兩側。較佳為,低熔點金屬部41,42係跨越設在配線13兩側之金屬膜61與金屬膜62、金屬膜63與金屬膜64而設置。From the viewpoint of reliably capturing the molten metal of the low melting point metal by the metal films 61 to 64, it is preferable that the low melting point metal portions 41, 42 are in contact with the metal films 61 to 64. Preferably, in the width direction of the wiring 13, the metal films 61 to 64 are provided on both sides of the insulating films 51, 52. Preferably, the metal films 61 to 64 are provided on both sides of the fuse electrode portions 13a and 13b in the width direction of the wiring 13. Preferably, the low-melting-point metal portions 41 and 42 are provided across the metal film 61 and the metal film 62, the metal film 63, and the metal film 64 provided on both sides of the wiring 13.

又,在保險絲1,即使是過電流未在第1端子11與第2端子12流動之情形,藉由使發熱體15發熱亦可使保險絲功能產生。具體而言, 藉由對第3端子14與端子11,12或端子16之間賦予電力,使發熱體15發熱。藉由來自此發熱體15之熱,低熔點金屬部41,42熔解,配線13之保險絲電極部13a,13b被熔斷。Further, in the case where the overcurrent does not flow through the first terminal 11 and the second terminal 12, the fuse 1 can generate a fuse function by generating heat. in particular, By applying electric power between the third terminal 14 and the terminals 11, 12 or the terminal 16, the heating element 15 generates heat. The low-melting-point metal portions 41, 42 are melted by the heat from the heating element 15, and the fuse electrode portions 13a, 13b of the wiring 13 are blown.

在保險絲1,藉由設在貫通孔36內且熱傳導率較絕緣層36高之高熱傳導體38使發熱體15與配線13連接。因此,發熱體15之熱容易透過配線13傳至低熔點金屬部41,42。是以,在保險絲1,即使在使發熱體15發熱而主動地使保險絲功能產生時,保險絲功能亦高確率產生。In the fuse 1, the heat generating body 15 is connected to the wiring 13 by a high heat conductor 38 provided in the through hole 36 and having a higher thermal conductivity than the insulating layer 36. Therefore, the heat of the heating element 15 is easily transmitted to the low-melting-point metal portions 41, 42 through the wiring 13. Therefore, in the fuse 1, even when the heating element 15 is heated to actively generate the fuse function, the fuse function is highly accurate.

從保險絲功能更高確率產生之觀點觀之,較佳為,在俯視時,貫通孔36a設成與低熔點金屬部41,42不重疊。低熔點金屬部41,42位於貫通孔36a上之情形,為了熔斷配線13使第1端子11與第2端子12絕緣,在高熱傳導體38具有導電性之情形,必須與配線13一起熔斷至高熱傳導體38。另一方面,在俯視時,貫通孔36a設成與低熔點金屬部41,42不重疊之情形,若僅熔斷配線13則第1端子11與第2端子12絕緣。是以,保險絲功能更容易產生。From the viewpoint of the higher accuracy of the fuse function, it is preferable that the through hole 36a is provided so as not to overlap the low melting point metal portions 41, 42 in plan view. When the low-melting-point metal portions 41 and 42 are located in the through-holes 36a, the first terminal 11 and the second terminal 12 are insulated from the fuse line 13, and when the high-heat conductor 38 is electrically conductive, it must be blown together with the wiring 13 to high heat conduction. Body 38. On the other hand, in the plan view, the through hole 36a is provided so as not to overlap the low-melting-point metal portions 41 and 42. When only the wiring 13 is blown, the first terminal 11 and the second terminal 12 are insulated. Therefore, the fuse function is easier to produce.

以下,說明上述實施形態之變形例。以下之說明中,對具有與上述實施形態實質上共通功能之構件以共通符號參照,省略說明。Hereinafter, a modification of the above embodiment will be described. In the following description, members having substantially the same functions as those of the above-described embodiments are referred to by common symbols, and description thereof will be omitted.

(第1變形例)(First Modification)

圖9係第1變形例之保險絲之概略剖面圖。Fig. 9 is a schematic cross-sectional view showing a fuse according to a first modification.

如圖9所示,保險絲1a進一步具備覆蓋低熔點金屬部41,42且具有較低熔點金屬部41,42之熔點高之熔點之絕緣層80亦可。藉由設置此絕緣層80,可抑制低熔點金屬部41,42熔解而成之低熔點金屬之熔液往預期外方向濕潤擴展。As shown in FIG. 9, the fuse 1a may further include an insulating layer 80 that covers the low-melting-point metal portions 41, 42 and has a melting point of a lower melting point metal portion 41, 42 having a higher melting point. By providing the insulating layer 80, it is possible to suppress the melt of the low melting point metal melted by the low melting point metal portions 41, 42 from spreading in an intended outward direction.

第2絕緣層80之熔點,較佳為,較低熔點金屬部41,42之熔點高10℃以上,更佳為,高20℃以上。第2絕緣層80可由例如聚對苯二甲酸乙二酯、聚對苯二甲酸丁二醇酯、聚碳酸酯等可用在絕緣層51,52之絕緣材料構成。The melting point of the second insulating layer 80 is preferably such that the melting point of the lower melting point metal portions 41, 42 is 10 ° C or more higher, more preferably 20 ° C or higher. The second insulating layer 80 may be made of an insulating material such as polyethylene terephthalate, polybutylene terephthalate, polycarbonate or the like which can be used for the insulating layers 51, 52.

(第2變形例)(Second modification)

圖10係第2變形例之保險絲之概略剖面圖。Fig. 10 is a schematic cross-sectional view showing a fuse according to a second modification.

在上述實施形態之保險絲1,說明發熱體15設在絕緣性基板20上之例。然而,本發明並不限於此構成。如圖10所示,在本變形例之保險絲1b,發熱體15設在絕緣性基板20之內部。絕緣性基板20之位於發熱體15與配線13之間之部分構成絕緣層36。即使是此情形,亦可獲得與上述實施形態實質上相同之效果。In the fuse 1 of the above embodiment, an example in which the heating element 15 is provided on the insulating substrate 20 will be described. However, the present invention is not limited to this configuration. As shown in FIG. 10, in the fuse 1b of the present modification, the heat generating body 15 is provided inside the insulating substrate 20. The portion of the insulating substrate 20 between the heating element 15 and the wiring 13 constitutes an insulating layer 36. Even in this case, substantially the same effects as those of the above embodiment can be obtained.

1‧‧‧保險絲1‧‧‧Fuse

11‧‧‧第1端子11‧‧‧1st terminal

12‧‧‧第2端子12‧‧‧2nd terminal

13‧‧‧配線13‧‧‧Wiring

13a,13b‧‧‧保險絲電極部13a, 13b‧‧‧Fuse electrode

15‧‧‧發熱體15‧‧‧heating body

20‧‧‧絕緣性基板20‧‧‧Insulating substrate

20a‧‧‧第1主面20a‧‧‧1st main face

20b‧‧‧第2主面20b‧‧‧2nd main face

21,22‧‧‧電極21,22‧‧‧electrodes

25,27‧‧‧側面電極25,27‧‧‧ Side electrode

35‧‧‧電極層35‧‧‧electrode layer

36‧‧‧絕緣層36‧‧‧Insulation

36a‧‧‧貫通孔36a‧‧‧through holes

38‧‧‧高熱傳導體38‧‧‧High thermal conductor

41,42‧‧‧低熔點金屬部41,42‧‧‧Low-melting metal parts

51,52‧‧‧絕緣層51,52‧‧‧Insulation

70‧‧‧保護層70‧‧‧Protective layer

Claims (7)

一種保險絲,具備:絕緣性基板;配線,係配置在該絕緣性基板之一主面上;低熔點金屬部,係設在該配線之上,具有較該配線低之熔點,且在成為熔液時使該配線熔解;以及絕緣層,係配置在該配線與該低熔點金屬部之間,該絕緣層之熔點為180℃~350℃。 A fuse comprising: an insulating substrate; a wiring disposed on one main surface of the insulating substrate; and a low melting point metal portion provided on the wiring, having a melting point lower than the wiring, and being a molten metal The wiring is melted; and an insulating layer is disposed between the wiring and the low melting point metal portion, and the insulating layer has a melting point of 180 ° C to 350 ° C. 如申請專利範圍第1項之保險絲,其中,該絕緣層之熔點較該低熔點金屬部之熔點高。 The fuse of claim 1, wherein the insulating layer has a melting point higher than a melting point of the low melting point metal portion. 如申請專利範圍第1或2項之保險絲,其中,該絕緣層係由熱塑性樹脂構成。 A fuse according to claim 1 or 2, wherein the insulating layer is made of a thermoplastic resin. 如申請專利範圍第1或2項之保險絲,其進一步具備覆蓋該低熔點金屬部且具有熔點較該低熔點金屬部之熔點高之第2絕緣層。 The fuse according to claim 1 or 2, further comprising a second insulating layer covering the low melting point metal portion and having a melting point higher than a melting point of the low melting point metal portion. 如申請專利範圍第1或2項之保險絲,其進一步具備加熱該低熔點金屬部之發熱體。 A fuse according to claim 1 or 2, further comprising a heating element for heating the low melting point metal portion. 如申請專利範圍第1或2項之保險絲,其中,該低熔點金屬部以Sn為主成分。 The fuse of claim 1 or 2, wherein the low melting point metal portion is mainly composed of Sn. 如申請專利範圍第1或2項之保險絲,其中,該絕緣層係設在該配線與該低熔點金屬部之整個重疊部分。A fuse according to claim 1 or 2, wherein the insulating layer is provided over the entire overlapping portion of the wiring and the low melting point metal portion.
TW102128822A 2012-08-29 2013-08-12 Fuse TWI493588B (en)

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WO2015059955A1 (en) * 2013-10-24 2015-04-30 株式会社村田製作所 Fuse element and method for producing same
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TW201140986A (en) * 2010-02-19 2011-11-16 Sony Chemical & Inf Device Protection circuit, battery control device, and battery pack

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