TWI493267B - Improvement method for active device array substrate, active device array substrate and display panel - Google Patents

Description

Improved method of active device array substrate, active device array substrate and display panel

The present invention relates to an improved method of an active device array substrate, an active device array substrate, and a display panel.

A liquid-crystal-on-silicon panel (LCOS panel) includes an active device array substrate, an opposite substrate, and a liquid crystal layer disposed between the active device array substrate and the opposite substrate. . Generally, after the active device array substrate completes the partial process of the semiconductor, impurities such as fluoride or organic substances are left in the oxide of the outer metal surface of the substrate, wherein the thickness of the oxide is about 60. -120Å.

At present, in order to reduce the thickness of impurities, the prior art removes residual impurities on the outer metal surface of the substrate. For example, a conventional method for removing impurities on the outer metal surface of the active device array substrate is to wet-etch using a weakly alkaline etching solution to reduce the thickness to 40 Å. However, after the etching process, the substrate, Residual impurities such as fluorides, oxides or organic substances on the outer metal surface will be unevenly distributed, resulting in an uneven surface. If the 矽-based liquid crystal panel is fabricated by using the active device array substrate, the electric field uniformity of the 矽-based liquid crystal panel is affected, and the image projected by the 矽-based liquid crystal panel generates uneven mura, which affects the display effect. .

The present invention provides an improved method of an active device array substrate that can improve the uniformity of an electric field generated on an active device array substrate.

The present invention provides an active device array substrate that produces a relatively uniform electric field.

The invention provides a display panel which has a good display effect.

An improved method of the active device array substrate of the present invention comprises the following steps. An active device array substrate is provided, wherein the active device array substrate comprises a substrate, a plurality of active devices, a first oxide layer and a plurality of electrodes. The electrodes are located between the first oxide layer and the substrate, and are electrically connected to the active elements respectively. A portion of the first oxide layer is removed, wherein a second oxide layer is formed on the electrodes after the first oxide layer is removed. The second oxide layer is subjected to an oxygen ashing surface treatment such that the second oxide layer has a flat surface and the surface faces away from the electrodes.

In an embodiment of the invention, the method of removing the first oxide layer comprises performing wet etching with a weakly alkaline etching solution.

In an embodiment of the invention, after the first oxide layer is removed, the second oxide layer is formed on the electrodes via a natural oxidation reaction.

In an embodiment of the invention, the material of the first oxide layer or the second oxide layer comprises aluminum oxide, and the impurities of the first oxide layer or the second oxide layer include at least one of fluoride and organic matter.

In an embodiment of the invention, after performing the step of performing an oxygen ashing surface treatment on the second oxide layer, the second oxide layer comprises less than 0.5% by weight of carbon.

In an embodiment of the invention, after performing the step of performing an oxygen ashing surface treatment on the second oxide layer, the second oxide layer comprises fluorine in a total weight percentage of less than 6%.

In an embodiment of the invention, after the step of performing an oxygen ashing surface treatment on the second oxide layer, the thickness of the second oxide layer is between 47 Å and 65 Å.

The active device array substrate of the present invention comprises a substrate, a plurality of active components, an oxide layer, and a plurality of electrodes. The active component is disposed on the substrate. The oxide layer has a flat surface and the oxide layer comprises less than 0.5% carbon by weight. The electrodes are located between the oxide layer and the substrate, wherein the surface of the oxide layer faces away from the electrodes, and the electrodes are electrically connected to the active elements, respectively.

In an embodiment of the invention, the surface of the oxide layer is a flat surface treated with an oxygen-ashing surface.

In an embodiment of the invention, the material of the oxide layer includes oxidation Aluminum, and the impurities of the oxide layer include at least one of fluoride and organic matter.

In an embodiment of the invention, the oxide layer comprises less than 6% total fluorine by weight.

In an embodiment of the invention, the oxide layer has a thickness of between 47 Å and 65 Å.

In an embodiment of the invention, the electrodes described above cover the active components.

In an embodiment of the invention, the electrode is made of aluminum, and the material of the substrate comprises ruthenium.

In an embodiment of the invention, the active device array substrate further includes a spacer disposed on the substrate and separating the electrodes.

The display panel of the present invention includes the active device array substrate, the pair of substrates, and a liquid crystal layer. The electrode is disposed between the first substrate and the opposite substrate. The liquid crystal layer is disposed between the active device array substrate and the opposite substrate.

In an embodiment of the invention, the opposite substrate includes a second substrate and a common electrode layer. The common electrode layer is disposed on the second substrate and located between the second substrate and the liquid crystal layer.

Based on the above, the improved method of the active device array substrate of the embodiment of the present invention may have the active device array substrate having a flat surface of the second oxide layer, and the active device array substrate of the embodiment of the present invention has a second surface of a flat surface. The oxide layer, thus the active device array substrate can produce a relatively uniform electric field. Therefore, when the display panel is fabricated by using the active device array substrate, the display panel can be made good. Good electric field uniformity, and can make the screen projected by the display panel not produce uneven mura, so that the display panel has a good display effect.

The above described features and advantages of the invention will be apparent from the following description.

100', 100‧‧‧ active device array substrate

110‧‧‧Substrate

120‧‧‧Active components

130‧‧‧First oxide layer

140‧‧‧electrode

150‧‧‧ spacers

160‧‧‧Second oxide layer

170‧‧‧Alignment film

200‧‧‧ display panel

210‧‧‧ opposite substrate

211‧‧‧second substrate

212‧‧‧Common electrode layer

220‧‧‧Liquid layer

S1‧‧‧ surface

D1, D2‧‧‧ thickness

AA‧‧‧ display area

X‧‧‧ direction

1A to 1C are schematic cross-sectional views showing a manufacturing process of an active device array substrate according to an embodiment of the present invention.

1D is a front elevational view of the active device array substrate of the embodiment of FIG. 1C.

1E is an experimental data diagram of electric field uniformity of the active device array substrate of the embodiment of FIG. 1C.

2 is a schematic diagram of a display panel in accordance with an embodiment of the present invention.

1A to 1C are schematic cross-sectional views showing a manufacturing process of an active device array substrate 100 according to an embodiment of the present invention. An improved method of the active device array substrate 100 in an embodiment of the present invention is applicable to a method of manufacturing the display panel 200, and includes the following steps. Referring to FIG. 1A, first, an active device array substrate 100' is provided. The active device array substrate 100' includes a substrate 110, a plurality of active devices 120, a first oxide layer 130, and a plurality of electrodes 140. In this embodiment, the substrate 110 is, for example, a germanium substrate or other substrate suitable for forming an active device array. The board, and the active component 120 is a transistor (such as a field effect transistor or a bipolar junction transistor) or other type of switching device.

Specifically, in the embodiment, the electrode 140 is located between the first oxide layer 130 and the substrate 110 and electrically connected to the active devices 120 respectively. In more detail, these electrodes 140 cover these active elements 120, respectively. Further, in the embodiment, the active device array substrate 100' further includes a spacer 150 disposed on the substrate 110, and the spacer 150 separates the electrodes 140. In the present embodiment, the material of the spacer 150 is, for example, cerium oxide, but the invention is not limited thereto.

More specifically, in the present embodiment, the material of the electrode 140 is, for example, aluminum, and the material of the first oxide layer 130 will also include aluminum oxide due to the natural oxidation reaction. Further, since the active device array substrate 100' is partially processed by the semiconductor, a substance such as fluoride or organic substances is generally left on the outer metal surface of the substrate 110, wherein the fluoride may be derived from an etchant, and the organic substance It can come from the photoresist material left in the process. Therefore, the first oxide layer 130 of the present embodiment also includes impurities of at least one of fluoride and organic matter. For example, in the embodiment, the first oxide layer 130 has a thickness D1 of about 60-120 Å. It should be noted that the above various parameters are merely illustrative, and are not intended to limit the invention.

Next, referring to FIG. 1B, a portion of the first oxide layer 130 is removed. In the present embodiment, the method of removing the first oxide layer 130 may be wet etching, for example, with a weakly alkaline etching solution, and a portion of the first oxide layer 130 and its impurities may be removed. Specifically, after the first oxide layer 130 is removed, a second oxide layer 160 will pass through natural oxygen. The reaction is formed on these electrodes 140. At this time, the thickness D2 of the second oxide layer 160 is about 40 Å. It should be noted that the above various parameters are merely illustrative, and are not intended to limit the invention.

On the other hand, in the present embodiment, the second oxide layer 160 is similar in material to the first oxide layer 130, so the material of the second oxide layer 160 also includes aluminum oxide, and the impurities of the second oxide layer 160 include fluoride and organic matter. At least one of them. However, as shown in FIG. 1B, in the present embodiment, when the weakly alkaline etching liquid is subjected to wet etching, bubbles generated in the chemical reaction process may cause etching unevenness. Thus, residual impurities such as fluorides, oxides, or organic substances on the second oxide layer 160 are also unevenly distributed, and the surface of the second oxide layer 160 is not flat.

Therefore, next, referring to FIG. 1C, the second oxide layer 160 is subjected to an oxygen ashing surface treatment. Specifically, in the present embodiment, the oxygen ashing surface treatment is a surface treatment technique that uses oxygen plasma to enhance the oxygen-aluminum bonding. In this way, the aluminum oxide bond can be increased and the surface unevenness of the second oxide layer 160 can be filled, and the second oxide layer 160 has a flat surface S1, and the oxygen-ashing surface treated surface S1 faces the electrodes. 140, the active device array substrate 100 of the present embodiment can be formed.

In more detail, after performing the oxygen ashing surface treatment on the second oxide layer 160, the second oxide layer 160 of the active device array substrate 100 contains less than 0.5% of total carbon by weight, and the total weight percentage is less than 6%. Fluorine, wherein the content of carbon can be used as an indicator of the content of residual organic matter, and the content of fluorine can be used as an indicator of the content of residual fluoride. In addition, the thickness of the second oxide layer 160 at this time Degree D2 will be between 47Å and 65Å. It should be noted that the above various parameters are merely illustrative, and are not intended to limit the invention.

As a result, the improved method of the active device array substrate 100 of the present embodiment can effectively remove some impurities on the first oxide layer 130. Moreover, since the second oxide layer 160 of the active device array substrate 100 has a flat surface S1 and a surface S1, it also has a good oxygen-aluminum bond. Therefore, the active device array substrate 100 can generate a relatively uniform electric field.

1D is a front elevational view of the active device array substrate of the embodiment of FIG. 1C. 1E is an experimental data diagram of electric field uniformity of the active device array substrate of the embodiment of FIG. 1C. 1D and FIG. 1E, the horizontal axis of FIG. 1E is the position of the active device array substrate 100 in the display area AA direction X, and the vertical axis of FIG. 1E is the display area AA direction X of the active device array substrate 100. The shared voltage, and the value of this shared voltage has been normalized. As shown in FIG. 1E, the active device array substrate 100 may have a relatively uniform electric field after being subjected to an oxygen ashing surface treatment. Therefore, when the display panel 200 is fabricated by the active device array substrate 100, the display panel 200 can have good electric field uniformity, and the screen projected by the display panel 200 can be made to generate unevenness without causing unevenness. The panel has a good display.

2 is a cross-sectional view of a display panel in accordance with an embodiment of the present invention. Referring to FIG. 2, in the embodiment, the active device array substrate 100 can be used to fabricate the display panel 200. In this embodiment, the display panel 200 can be, for example, a liquid-crystal-on-liquid crystal panel. Silicon panel, LCOS panel). this Among the manufacturing methods of the display panel 200 of the embodiment, the following steps are included. First, referring to FIG. 2, the above-described active device array substrate 100 and a pair of substrates 210 are provided. Specifically, in the embodiment, the opposite substrate 210 includes a second substrate 211 and a common electrode layer 212, and the common electrode layer 212 is disposed on the second substrate 211. More specifically, the electrode 140 of the active device array substrate 100 is disposed between the substrate 110 and the opposite substrate 210. Further, in the present embodiment, the second substrate 211 is, for example, a glass substrate, and the material of the common electrode layer 212 is, for example, a transparent conductive material of tin-doped indium oxide (ITO).

Next, the active device array substrate 100 and the opposite substrate 210 are combined, and a liquid crystal molecular material is filled between the two to form a liquid crystal layer 220. Specifically, as shown in FIG. 2 , the liquid crystal layer 220 is disposed between the active device array substrate 100 and the counter substrate 210 , and the common electrode layer 212 is disposed between the second substrate 211 and the liquid crystal layer 220 . In addition, in the embodiment, an alignment film 170 is disposed on the active device array substrate 100 before the active device array substrate 100 and the opposite substrate 210 are combined, so that the liquid crystal in the liquid crystal layer 220 can be Smooth rotation. In this way, the display panel 200 can be formed.

In summary, the improved method of the active device array substrate of the embodiment of the present invention is such that the active device array substrate has a flat surface of the second oxide layer, and the active device array substrate of the embodiment of the present invention has a flat The second oxide layer of the surface, thus the active device array substrate can produce a relatively uniform electric field. Therefore, when the display panel is fabricated by using the active device array substrate, the display panel can have good electric field uniformity, and the screen projected by the display panel can be prevented from being generated. Uniform cymbal, so that the display panel has a good display.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧Active component array substrate

110‧‧‧Substrate

120‧‧‧Active components

140‧‧‧electrode

150‧‧‧ spacers

160‧‧‧Second oxide layer

S1‧‧‧ surface

D2‧‧‧ thickness

Claims (20)

An improved method for an active device array substrate includes: providing an active device array substrate, wherein the active device array substrate comprises a substrate, a plurality of active devices, a first oxide layer, and a plurality of electrodes, wherein the electrodes are located at the first Between the oxide layer and the substrate, and electrically connected to the active devices respectively; removing a portion of the first oxide layer, wherein after the first oxide layer is removed, a second oxide layer is formed on the And performing an oxygen ashing surface treatment on the second oxide layer such that the second oxide layer has a flat surface opposite to the electrodes. An improved method of the active device array substrate according to claim 1, wherein the method of removing the first oxide layer comprises wet etching with a weakly alkaline etching solution. The improved method of the active device array substrate according to claim 1, wherein the second oxide layer is formed on the electrodes via a natural oxidation reaction after the first oxide layer is removed. The method for improving an active device array substrate according to claim 1, wherein the material of the first oxide layer or the second oxide layer comprises aluminum oxide, and the impurities of the first oxide layer or the second oxide layer comprise At least one of fluoride and organic matter. The improved method of the active device array substrate according to claim 1, wherein the second oxide layer comprises less than 0.5% by weight after performing the step of performing an oxygen ashing surface treatment on the second oxide layer. Carbon. The improved method of the active device array substrate according to claim 1, wherein the second oxide layer comprises less than 6% by weight after performing the step of performing an oxygen ashing surface treatment on the second oxide layer. Fluorine. The improved method of the active device array substrate according to claim 1, wherein the second oxide layer has a thickness of 47 Å to 65 Å after performing the step of performing an oxygen ashing surface treatment on the second oxide layer. between. The improved method of the active device array substrate according to claim 1, wherein the electrodes respectively cover the active components. The method for improving an active device array substrate according to claim 1, wherein the electrodes are made of aluminum, and the material of the substrate comprises germanium. An active device array substrate comprising: a substrate; a plurality of active components disposed on the substrate; an oxide layer, wherein the oxide layer has a flat surface, and the oxide layer comprises less than 0.5% of carbon by weight And a plurality of electrodes disposed between the oxide layer and the substrate, wherein the surface of the oxide layer faces the electrodes, and the electrodes are electrically connected to the active elements respectively. The active device array substrate according to claim 10, wherein the surface of the oxide layer is a flat surface treated by an oxygen ashing surface. The active device array substrate according to claim 10, wherein The material of the oxide layer includes aluminum oxide, and impurities of the oxide layer include at least one of fluoride and organic matter. The active device array substrate according to claim 10, wherein the oxide layer comprises fluorine in a total weight percentage of less than 6%. The active device array substrate according to claim 10, wherein the oxide layer has a thickness of between 47 Å and 65 Å. The active device array substrate according to claim 10, wherein the electrodes respectively cover the active components. The active device array substrate according to claim 10, wherein the electrodes are made of aluminum, and the material of the substrate comprises germanium. The active device array substrate according to claim 10, further comprising a spacer disposed on the substrate and separating the electrodes. A display panel includes: an active device array substrate, comprising: a first substrate; a plurality of active elements disposed on the first substrate; an oxide layer, wherein the oxide layer has a flat surface, and the oxide layer a carbon comprising less than 0.5% by weight of the total weight; and a plurality of electrodes between the oxide layer and the first substrate, wherein the surface of the oxide layer faces the electrodes, and the electrodes are respectively associated with the active Electrically connecting the components; the pair of substrates, wherein the electrodes are disposed on the first substrate and the opposite substrate And a liquid crystal layer disposed between the active device array substrate and the opposite substrate. The display panel of claim 18, wherein the material of the oxide layer comprises aluminum oxide, the impurity of the oxide layer comprises at least one of fluoride and organic matter, and the oxide layer comprises less than 6 by weight. % fluorine. The display panel of claim 18, wherein the opposite substrate comprises: a second substrate; and a common electrode layer disposed on the second substrate, wherein the common electrode layer is located on the second substrate Between the liquid crystal layers.