TWI489752B - Charge pump for controllable turn on time of sharing transistor - Google Patents
Charge pump for controllable turn on time of sharing transistor Download PDFInfo
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本發明係有關一種電荷泵(CP:Charge Pump),特別是一種可控制共用電晶體接通時間之電荷泵,其經調整使控制源開關動作之控制信號和控制共用電晶體動作之控制信號具有一定時間差,先接通共用電晶體使其達到一定電壓電平,防止斷開源開關之後產生之反向電流,維持載入於環路濾波器之動態電流(Dynamic Current)穩定性,可廣泛用於需用電子電路實現之多數電子/半導體元件。The present invention relates to a charge pump (CP: Charge Pump), and more particularly to a charge pump capable of controlling a common transistor on-time, which is adjusted so that a control signal for controlling a source switching action and a control signal for controlling a common transistor action have A certain time difference, first turn on the common transistor to reach a certain voltage level, prevent the reverse current generated after the source switch is turned off, and maintain the dynamic current stability (Dynamic Current) loaded in the loop filter, which can be widely used. Most electronic/semiconductor components that require electronic circuitry.
通常,電荷泵為根據脈衝信號增加或減少特定量之電荷,調整環路濾波器(Loop filter)中電壓之電子電路,所述脈衝信號為在鎖相環(PLL:Phase Locked Loop)中,將反饋並分頻標準分頻器之標準頻率和電壓控制振盪器之輸出信號所得之主分頻器輸出頻率,在相位檢測器(PFD:Phase Frequency Detector)中進行比較之後輸出。Generally, the charge pump is an electronic circuit that adjusts a voltage in a loop filter according to a pulse signal to increase or decrease a specific amount of charge, and the pulse signal is in a phase locked loop (PLL: Phase Locked Loop). The main divider output frequency obtained by feedback and dividing the standard frequency of the standard frequency divider and the output signal of the voltage controlled oscillator is outputted after comparison in a phase detector (PFD: Phase Frequency Detector).
因此,若所述相位檢測器(PFD)輸出正脈衝,電荷泵向具備於環路濾波器之電容器,供應相當於其脈衝寬度之電荷量之電流,聚積電荷增加電壓;若所述相位檢測器(PFD)輸出負脈衝,所述電荷泵從所述電容器,逆向吸收相當於其脈衝寬度之電荷量之電流,減少電荷降低電壓。Therefore, if the phase detector (PFD) outputs a positive pulse, the charge pump supplies a current corresponding to the pulse amount of the capacitor to the capacitor provided in the loop filter, and accumulates the charge to increase the voltage; if the phase detector (PFD) outputs a negative pulse from which the charge pump reversely absorbs a current corresponding to the amount of charge of its pulse width, reducing the charge reduction voltage.
所述先前電荷泵,如圖1所示,包括:電流源部,向環路濾波器供應電流;電流吸收部,從所述環路濾波器吸收電流;標準電流供應部,供應一定偏置電流;及共用部(sharing),其兩端子各連接至具備於所述電流源部和電流吸收部之源開關和吸收開關。The prior charge pump, as shown in FIG. 1, includes: a current source portion that supplies current to the loop filter; a current sinking portion that sinks current from the loop filter; and a standard current supply portion that supplies a bias current And a sharing portion, each of which is connected to a source switch and an absorption switch provided in the current source portion and the current absorbing portion.
此時,所述電流源部為由PMOS電晶體構成之電流鏡(Current mirror)結構,而電流吸收部為由NMOS電晶體構成之電流鏡(Current mirror)結構。At this time, the current source portion is a current mirror structure composed of a PMOS transistor, and the current sink portion is a current mirror structure composed of an NMOS transistor.
所述電流源部連接於電壓源(Vdd)和輸出端子(Vout)之間,包括:源開關(P3),將所述相位檢測器(PFD)所生成之源控制信號(UP_b)載入於門;第一控制開關(P1、P2),在所述標準電流供應部,將恒定電流(IUP,REF )作為控制信號載入於門。此時,所述源開關(P3),在源控制信號(UP_b)為0時接通(turn on),使源電流從電壓源(Vdd)經輸出端子(Vout)流向環路濾波器,從而聚積電荷。The current source portion is connected between the voltage source (Vdd) and the output terminal (Vout), and includes: a source switch (P3) for loading a source control signal (UP_b) generated by the phase detector (PFD) a first control switch (P1, P2) in which a constant current (I UP, REF ) is loaded as a control signal to the gate. At this time, the source switch (P3) turns on when the source control signal (UP_b) is 0, and causes the source current to flow from the voltage source (Vdd) to the loop filter through the output terminal (Vout), thereby Accumulate charge.
另外,所述電流吸收部連接於所述輸出端子(Vout)和接地電壓(GND)之間,包括:吸收開關(N3),將所述相位檢測器(PFD)所生成之吸收控制信號(DN)載入於門;第二控制開關(N1、N2),在所述標準電流供應部,將恒定電流(IDN,REF )作為控制信號載入於門。此時,所述吸收開關(N3),在吸收控制信號(DN)為1時接通(turn on),使吸收電流從輸出端子(Vout)流向接地電壓(GND),從而擠出電荷。In addition, the current absorbing portion is connected between the output terminal (Vout) and a ground voltage (GND), and includes: an absorption switch (N3), and an absorption control signal (DN) generated by the phase detector (PFD) The second control switch (N1, N2) loads a constant current (I DN, REF ) as a control signal in the standard current supply unit. At this time, the absorption switch (N3) turns on when the absorption control signal (DN) is 1, and causes the absorption current to flow from the output terminal (Vout) to the ground voltage (GND), thereby extruding the electric charge.
另外,所述共用部(sharing),包括:第一共用電晶體(N5),其一端子連接於所述源開關之一端子,另一端子連接於接地電源,由其閘上載入所述源控制信號(UP_b)之NMOS電晶體構成;第二共用電晶體(P5),其一端子連接於所述吸收開關之一端子,另一端子連接於電壓源,由其閘上載入所述吸收控制信號(DN)之PMOS電晶體構成。In addition, the sharing portion includes: a first common transistor (N5) having one terminal connected to one terminal of the source switch and the other terminal connected to a ground power source, and the gate is loaded by the gate An NMOS transistor of a source control signal (UP_b); a second common transistor (P5) having one terminal connected to one of the terminals of the absorbing switch and the other terminal connected to a voltage source loaded by the gate It is composed of a PMOS transistor that absorbs a control signal (DN).
所述先前源開關型(Source switch type)電荷泵中,所述源開關(P3)和第一共用電晶體(N5)之門相互形成共同節點,並載入相同源控制信號(UP_b);而所述吸收開關(N3)和第二共用電晶體(P5)之門相互形成共同節點,並載入相同吸收控制信號(DN)。In the previous source switch type charge pump, the gates of the source switch (P3) and the first common transistor (N5) form a common node with each other and load the same source control signal (UP_b); The gates of the absorption switch (N3) and the second common transistor (P5) form a common node with each other and load the same absorption control signal (DN).
這樣,因向源開關(P3)和第一共用電晶體(N5)同時載入相同源控制信號(UP_b),在所述源控制信號(UP_b)從1轉換至0時,所述第一共用電晶體(N5)保持斷開(Turn off)狀態,但所述源開關(P3)將接通(Turn on),源電流(I1 )從所述電壓源(Vdd)通過輸出端子(Vout)流動,在環路濾波器聚積電荷。 但是,聚積相當於所述相位檢測器輸出脈衝寬度之電荷之後,所述源控制信號(UP_b)從0轉換至1,則所述源開關(P3)斷開,切斷電壓源(Vdd)之供應,而所述第一共用電晶體(N5)接通,連接至接地電源,從而切斷源電流(I1 )供應。Thus, since the same source control signal (UP_b) is simultaneously loaded to the source switch (P3) and the first common transistor (N5), the first share is shared when the source control signal (UP_b) transitions from 1 to 0. transistor (N5) remain open (Turn off) state, but the source switch (P3) will turn on (Turn on), a current source (I 1) from the voltage source (Vdd) through the output terminal (Vout) Flow, accumulate charge in the loop filter. However, after accumulating the charge corresponding to the output pulse width of the phase detector, the source control signal (UP_b) is switched from 0 to 1, and the source switch (P3) is turned off, and the voltage source (Vdd) is turned off. supply, and the first common electrode crystals (N5) is turned on, the power supply connected to the ground, thereby cutting off the current source (I 1) supplied.
此時,因所述源控制信號(UP_b)同時載入至源開關(P3)和第一共用電晶體(N5),在所述源開關(P3)之切斷時間之內,所述第一共用電晶體(N5)接通,電壓源通過所述源開關(P3)和第一共用電晶體(N5)流向接地電源,降低a節點之電壓。At this time, since the source control signal (UP_b) is simultaneously loaded to the source switch (P3) and the first common transistor (N5), within the cutoff time of the source switch (P3), the first The common transistor (N5) is turned on, and the voltage source flows to the ground power source through the source switch (P3) and the first common transistor (N5) to lower the voltage of the node a.
因此,所述輸出端子(Vout)電壓高於a節點電壓,反向電流從輸出端子(Vout)通過第一控制開關(P2)、a節點及第一共用電晶體(N5)流動,如圖2所示,將降低供應至所述環路濾波器之動態電流(Dynamic current,I3 )值,輸出端子之輸出電壓逐漸減少,從而不能將電壓調整至所述環路濾波器所需值。Therefore, the output terminal (Vout) voltage is higher than the a node voltage, and the reverse current flows from the output terminal (Vout) through the first control switch (P2), the a node, and the first common transistor (N5), as shown in FIG. As shown, the value of the dynamic current (I 3 ) supplied to the loop filter will be lowered, and the output voltage of the output terminal will gradually decrease, so that the voltage cannot be adjusted to the value required by the loop filter.
另外,因向吸收開關(N3)和第二共用電晶體(P5)同時載入相同吸收控制信號(DN),在所述吸收控制信號(DN)從0轉換至1時,所述第二共用電晶體(P5)保持斷開(Turn off)狀態,但所述吸收開關(N3)將接通(Turn on),吸收電流(I2 )從所述環路濾波器通過輸出端子(Vout)流向接地電源(GND),從而擠出電荷。In addition, since the same absorption control signal (DN) is simultaneously loaded to the absorption switch (N3) and the second common transistor (P5), the second sharing is performed when the absorption control signal (DN) is switched from 0 to 1. The transistor (P5) remains in the Turn off state, but the absorption switch (N3) will turn "Turn on" and the absorption current (I 2 ) flows from the loop filter through the output terminal (Vout) Ground the power supply (GND) to squeeze the charge.
但是,放射相當於所述相位檢測器輸出脈衝寬度之電荷之後,所述吸收控制信號(DN)從1轉換至0,則所述吸收開關(N3)斷開,切斷輸出端子(Vout)之供應,而所述第二共用電晶體(P5)接通,連接至電壓源(Vdd),從而切斷吸收電流(I2 )供應。However, after the radiation corresponding to the output of the phase detector output pulse width, the absorption control signal (DN) is switched from 1 to 0, the absorption switch (N3) is turned off, and the output terminal (Vout) is cut off. Supply, while the second common transistor (P5) is turned on, connected to a voltage source (Vdd), thereby cutting off the absorption current (I 2 ) supply.
此時,因所述吸收控制信號(DN)同時載入至吸收開關(N3)和第二共用電晶體(P5),在所述吸收開關(N3)之切斷時間之內,所述第二共用電晶體(P5)接通,電壓源(Vdd)通過所述吸收開關(N3)和第二共用電晶體(P5)流向接地電源,提高b節點之電壓。At this time, since the absorption control signal (DN) is simultaneously loaded to the absorption switch (N3) and the second common transistor (P5), within the cut-off time of the absorption switch (N3), the second The common transistor (P5) is turned on, and the voltage source (Vdd) flows to the ground power source through the absorption switch (N3) and the second common transistor (P5) to increase the voltage of the b node.
因此,所述輸出端子(Vout)電壓低於b節點電壓,反向電流從b節點通過第二控制開關(N2)流向輸出端子(Vout),將改變供應至所述環路濾波器之動態電流(Dynamic current,I3 )值,從而不能將電壓調整至所述環路濾波器所需值。Therefore, the output terminal (Vout) voltage is lower than the b-node voltage, and the reverse current flows from the b-node through the second control switch (N2) to the output terminal (Vout), which changes the dynamic current supplied to the loop filter. (Dynamic current, I 3 ) value, so that the voltage cannot be adjusted to the value required by the loop filter.
這樣,所述第一及第二共用電晶體所導致之源開關(P3)和吸收開關(N3)一端子節點電壓不穩定引起之反向電流,將改變供應至所述環路濾波器之動態電流,出現非正常運行情況,不能向電壓控制振盪器傳遞根據相位檢測器之相位比較結果正確校準相位差之電壓,從而在鎖相環(PLL)中經常發生亂真(spurious)現象。Thus, the reverse current caused by the unstable voltage of the source switch (P3) and the absorption switch (N3) at the terminal of the first and second common transistors will change the dynamics supplied to the loop filter. The current, abnormal operation occurs, and the voltage of the phase difference is correctly calibrated according to the phase comparison result of the phase detector to the voltage controlled oscillator, so that spurious phenomenon often occurs in the phase locked loop (PLL).
本發明之目的在於,提供一種可控制共用電晶體接通時間之電 荷泵,其經調整使切斷源開關和吸收開關之控制信號和接通共用電晶體之控制信號之轉換時間各不相同,在源開關和吸收開關接通之前,先接通第一共用電晶體和第二共用電晶體,使共用電晶體之一端子達到一定電壓電平,從而防止因源開關和吸收開關切斷導致之反向電流所引起之動態電流非正常運行。It is an object of the present invention to provide a power that can control the turn-on time of a shared transistor. The charge pump is adjusted so that the control signals of the cut-off source switch and the absorption switch and the control signal for turning on the common transistor have different conversion times, and the first common power is turned on before the source switch and the absorption switch are turned on. The crystal and the second common transistor cause a terminal of the common transistor to reach a certain voltage level, thereby preventing the abnormal current caused by the reverse current caused by the switching of the source switch and the absorption switch.
本發明之目的是這樣實現的:提供一種可控制共用電晶體接通時間之電荷泵,在根據經相位檢測器比較之標準頻率和輸出頻率之脈衝信號,通過增加或減少電荷調整環路濾波器電壓之電荷泵中,包括:電流源部,具備將由所述相位檢測器生成,經定時控制器調整之源控制信號,載入於其閘之源開關;電流吸收部,具備將由所述相位檢測器生成,經定時控制器調整之吸收控制信號,載入於其閘之吸收開關;共用部,由連接於所述源開關和吸收開關之共用電晶體構成;及定時控制器,生成並供應控制信號,以調整使所述共用電晶體之運行時間和所述源開關、吸收開關之運行時間各不相同。另外,本發明共用部之特徵是,包括:第一共用電晶體,其一端子連接於由PMOS電晶體構成之源開關,另一端子連接於接地電源,由其閘上載入所述定時控制器所生成之第一共用控制信號之NMOS電晶體構成;第二共用電晶體,其一端子連接於由NMOS電晶體構成之吸收開關,另一端子連接於電 壓源,由其閘上載入所述定時控制器所生成之第二共用控制信號之PMOS電晶體構成。The object of the present invention is achieved by providing a charge pump capable of controlling a common transistor turn-on time by increasing or decreasing a charge adjustment loop filter based on a pulse signal of a standard frequency and an output frequency compared by a phase detector. The voltage charge pump includes: a current source unit having a source control signal generated by the phase detector and adjusted by a timing controller, and a source switch loaded in the gate; and a current sinking unit having a phase detection The device generates an absorption control signal adjusted by the timing controller and is loaded in the absorption switch of the gate; the sharing portion is composed of a common transistor connected to the source switch and the absorption switch; and a timing controller generates and supplies control The signal is adjusted to adjust the operating time of the common transistor and the operating time of the source switch and the absorption switch. In addition, the common portion of the present invention is characterized in that it comprises: a first common transistor having one terminal connected to a source switch composed of a PMOS transistor and the other terminal connected to a ground power source, and the timing control is loaded by the gate thereof The first shared control signal generated by the device is composed of an NMOS transistor; the second common transistor has one terminal connected to the absorption switch formed by the NMOS transistor and the other terminal connected to the electricity The voltage source is composed of a PMOS transistor whose gate is loaded with a second common control signal generated by the timing controller.
另外,本發明共用控制器之特徵是,生成第一共用控制信號,以在所述源開關切斷之前,先接通所述第一共用電晶體;生成第二共用控制信號,以在所述吸收開關切斷之前,先接通所述第二共用電晶體。In addition, the shared controller of the present invention is characterized in that a first common control signal is generated to turn on the first common transistor before the source switch is turned off; and to generate a second common control signal to The second common transistor is turned on before the absorption switch is turned off.
另外,本發明定時控制器之特徵是,包括:第一延遲單元,延遲所述相位檢測器所生成之信號;及觸發器,將所述第一延遲單元之輸出信號作為輸入,輸出所述第一及第二共用控制信號。In addition, the timing controller of the present invention is characterized in that: a first delay unit delays a signal generated by the phase detector; and a flip-flop that outputs an output signal of the first delay unit as an input One and second common control signals.
另外,本發明所述第一延遲單元之特徵是,輸出端連接於所述源開關和吸收開關,將經延遲之源控制信號載入至源開關之門,並將經延遲之吸收控制信號載入至吸收開關之門,識別所述源控制信號和吸收控制信號之轉換時間,決定第一及第二共用電晶體之接通時間。In addition, the first delay unit of the present invention is characterized in that an output terminal is connected to the source switch and the absorption switch, and the delayed source control signal is loaded to the gate of the source switch, and the delayed absorption control signal is carried. The gate of the absorption switch is input, the conversion time of the source control signal and the absorption control signal is recognized, and the on-times of the first and second common transistors are determined.
另外,本發明之特徵是,觸發器輸出端(Q)將先於所述源開關之切斷時間轉換之第一共用控制信號,載入至所述第一共用電晶體之門接通;將先於所述吸收開關之切斷時間轉換之第二共用控制信號,載入至所述第二共用電晶體之門接通。In addition, the present invention is characterized in that the trigger output terminal (Q) loads the first common control signal converted before the cut-off time of the source switch, and the gate to the first common transistor is turned on; The gate loaded to the second common transistor is turned on before the second common control signal of the cutoff time of the absorption switch.
另外,本發明之特徵是,還包括第二延遲單元,連接於所述觸發器輸出端(Qb)和復位端(Rn)之間,將輸出信號載入為觸發 器之重定信號,再次轉換所述第一及第二共用控制信號,決定所述第一及第二共用電晶體保持接通狀態之時間。In addition, the present invention is characterized in further comprising a second delay unit connected between the trigger output terminal (Qb) and the reset terminal (Rn) to load the output signal as a trigger. Resetting the signal, converting the first and second common control signals again, determining a time during which the first and second common transistors remain in an on state.
本發明使接通共用電晶體之共用控制信號,先於源控制信號及吸收控制信號轉換,從而先接通共用電晶體之後,再切斷源開關和吸收開關,預先將源開關和吸收開關一端子之電壓電平保持在一定值,減少與輸出端子之間之電壓差,以此防止切斷源開關和吸收開關時來自輸出端子之反向電流,增補動態電流之上、下電流不匹配(mismatch)使之變穩定,明顯減少鎖相環(PLL)之亂真(spurious)現象。The invention turns on the common control signal of the common transistor, before the source control signal and the absorption control signal, so that the common transistor is turned on first, then the source switch and the absorption switch are cut off, and the source switch and the absorption switch are pre-set. The voltage level of the terminal is kept at a certain value, and the voltage difference between the output terminal and the output terminal is reduced, thereby preventing the reverse current from the output terminal when the source switch and the absorption switch are cut off, and supplementing the dynamic current above and below the current mismatch ( Mismatch) makes it stable, significantly reducing the spurious phenomenon of the phase-locked loop (PLL).
下面,結合附圖對本發明之具體實施例進行詳細說明。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
本發明一實施例一種可控制共用電晶體接通時間之電荷泵,如圖3所示,包括:電流源部100,向環路濾波器供應電流聚積電荷;電流吸收部200,從所述環路濾波器得到電流供應並吸收電荷;標準電流供應部300,供應一定偏置電流;共用部(sharing)400,連接於具備在所述電流源部和電流吸收部之源開關和吸收開關;定時控制器500,生成並供應用於調整電晶體接通(turn on)時間之控制信號。According to an embodiment of the present invention, a charge pump capable of controlling a common transistor on-time, as shown in FIG. 3, includes: a current source portion 100 for supplying a current accumulation charge to a loop filter; and a current sinking portion 200 from the ring The circuit filter obtains a current supply and absorbs the charge; the standard current supply unit 300 supplies a certain bias current; a sharing portion 400 is connected to the source switch and the absorption switch provided in the current source portion and the current sink portion; timing The controller 500 generates and supplies a control signal for adjusting the turn-on time of the transistor.
所述電流源部100為由PMOS電晶體構成之電流鏡(Current mirror)結構,連接於電壓源(Vdd)和輸出端子(Vout)之間,包括:源開關(MP3),將由相位檢測器(PFD)生成(UP_b), 經定時控制器500調整之源控制信號(UP_bbb)載入至其閘;第一控制開關(MP1、MP2),在標準電流供應部300中,標準電流(Iref )作為控制信號載入至其閘。此時,所述源開關(MP3),在源控制信號(UP_bbb)為0時接通(turn on),使源電流從電壓源(Vdd)經輸出端子(Vout)流向環路濾波器,從而聚積電荷。在所述源控制信號中,英文字母“b”表示“bar”。The current source portion 100 is a current mirror structure composed of a PMOS transistor, connected between a voltage source (Vdd) and an output terminal (Vout), including: a source switch (MP3), which is to be phase detector ( PFD) generation (UP_b), the source control signal (UP_bbb) adjusted by the timing controller 500 is loaded to its gate; the first control switch (MP1, MP2), in the standard current supply unit 300, the standard current (I ref ) Loaded as a control signal to its gate. At this time, the source switch (MP3) turns on when the source control signal (UP_bbb) is 0, and causes the source current to flow from the voltage source (Vdd) to the loop filter through the output terminal (Vout), thereby Accumulate charge. In the source control signal, the English letter "b" indicates "bar".
所述源開關(MP3)之一端子連接於所述電壓源(Vdd),另一端子連接於所述第一控制開關(MP2)之一端子,而所述源開關(MP3)和第一控制開關(MP2)之共同連接端子,連接於將要後述之第一共用電晶體(MN5)之一端子。另外,所述第一控制開關(MP2)之另一端子,連接於輸出端子(Vout)。One terminal of the source switch (MP3) is connected to the voltage source (Vdd), the other terminal is connected to one terminal of the first control switch (MP2), and the source switch (MP3) and the first control The common connection terminal of the switch (MP2) is connected to one of the terminals of the first common transistor (MN5) which will be described later. In addition, the other terminal of the first control switch (MP2) is connected to the output terminal (Vout).
所述電流吸收部200為由NMOS電晶體構成之電流鏡(Current mirror)結構,連接於所述輸出端子(Vout)和接地電壓(GND)之間,包括:吸收開關(MN3),將由相位檢測器(PFD)生成(DN),經定時控制器500調整之吸收控制信號(DN_bb)載入至其閘;第二控制開關(MN1、MN2),在標準電流供應部300中,標準電流(Iref )作為控制信號載入至其閘。The current absorbing portion 200 is a current mirror structure composed of an NMOS transistor, and is connected between the output terminal (Vout) and a ground voltage (GND), and includes: an absorption switch (MN3), which is to be phase-detected. (PFD) generation (DN), the absorption control signal (DN_bb) adjusted by the timing controller 500 is loaded to its gate; the second control switch (MN1, MN2), in the standard current supply unit 300, the standard current (I) Ref ) is loaded as a control signal to its gate.
此時,所述吸收開關(MN3),在所述吸收控制信號(DN_bb)為1時接通,使吸收電流從所述輸出端子(Vout)流向輸出端子(Vout),從而擠出電荷。At this time, the absorption switch (MN3) is turned on when the absorption control signal (DN_bb) is 1, and causes an absorption current to flow from the output terminal (Vout) to the output terminal (Vout), thereby discharging the electric charge.
所述吸收開關(MN3)之一端子連接於所述接地電壓(GND),另一端子連接於所述第二控制開關(MN2)之一端子,而所述吸收開關(MN3)和第二控制開關(MN2)之共同連接端子,連接於將要後述之第二共用電晶體(MP5)之一端子。另外,所述第二控制開關(MN2)之另一端子,連接於輸出端子(Vout)。One terminal of the absorption switch (MN3) is connected to the ground voltage (GND), the other terminal is connected to one terminal of the second control switch (MN2), and the absorption switch (MN3) and the second control The common connection terminal of the switch (MN2) is connected to one terminal of a second common transistor (MP5) which will be described later. In addition, the other terminal of the second control switch (MN2) is connected to the output terminal (Vout).
另外,所述共用部(sharing)400,包括:第一共用電晶體(MN5),其一端子連接於所述源開關(MP3)和第一控制開關(MP2)之共同端子,另一端子連接於接地電源,由其閘上載入第一共用控制信號(SHP)之NMOS電晶體構成;第二共用電晶體(MP5),其一端子連接於所述吸收開關(MN3)和第二控制開關(MN2)之共同端子,另一端子連接於電壓源,由其閘上載入第二共用控制信號(SHN)之PMOS電晶體構成。In addition, the sharing 400 includes a first common transistor (MN5), one terminal of which is connected to a common terminal of the source switch (MP3) and the first control switch (MP2), and the other terminal is connected. The grounding power source is composed of an NMOS transistor with a first common control signal (SHP) mounted on its gate; a second common transistor (MP5) having a terminal connected to the absorption switch (MN3) and a second control switch The common terminal of (MN2) is connected to a voltage source and is composed of a PMOS transistor having a second common control signal (SHN) applied to its gate.
如圖4所示,所述定時控制器500,為經調整使所述源開關(MP3)切斷(turn off)時間和所述第一共用電晶體(MN5)接通(turn on)時間各不相同,並使所述吸收開關(MN3)切斷時間和所述第二共用電晶體(MP5)接通時間各不相同,包括:第一延遲單元(Delay Cell A)510,延遲所述相位檢測器(PFD)所生成之源控制信號(DU_b)和吸收控制信號(DN);觸發器520,將經所述第一延遲單元延遲之信號作為輸入,輸出所述第一及第二共用控制信號(SHP、SHN);及第二延遲單元(Delay Cell B) 530,再次延遲經所述第一延遲單元延遲之信號,載入為觸發器之重定信號。As shown in FIG. 4, the timing controller 500 is configured to adjust the turn-off time of the source switch (MP3) and the turn-on time of the first common transistor (MN5). Different, and the absorption switch (MN3) cut-off time and the second common transistor (MP5) turn-on time are different, including: a first delay unit (Delay Cell A) 510, delaying the phase a source control signal (DU_b) generated by a detector (PFD) and an absorption control signal (DN); a flip-flop 520 that receives the signal delayed by the first delay unit as an input, and outputs the first and second shared control Signal (SHP, SHN); and second delay unit (Delay Cell B) 530. Delay the signal delayed by the first delay unit and load the reset signal as a trigger.
此時,所述第一延遲單元510之輸出端連接於所述源開關(MP3)和吸收開關(MN3),將延遲一定時間之源控制信號(UP_bbb)載入至源開關(MP3)之門,並將吸收控制信號(DN_bb)載入至吸收開關(MN5)之門。At this time, the output end of the first delay unit 510 is connected to the source switch (MP3) and the absorption switch (MN3), and the source control signal (UP_bbb) delayed for a certain time is loaded to the gate of the source switch (MP3). And load the absorption control signal (DN_bb) to the gate of the absorption switch (MN5).
另外,所述觸發器520之輸出端(Q)連接至所述第一共用電晶體(MN5),載入第一共用控制信號(SHP),並連接至所述第二共用電晶體(MP5),載入第二共用控制信號(SHN)。In addition, the output terminal (Q) of the flip-flop 520 is connected to the first common transistor (MN5), loads a first common control signal (SHP), and is connected to the second common transistor (MP5). , loading the second common control signal (SHN).
此时,经所述定时控制器(Timing Controller)500之调整,所述第一共享控制信号(SHP)先於所述源控制信號(UP_bbb)轉換,而所述第二共用控制信號(SHN)先於所述吸收控制信號(DN_bb)轉換。因此,所述第一共用電晶體(MN5),在源開關(MP3)切斷之前,預先接通,而所述第二共用電晶體(MP5),在吸收開關(MN3)切斷之前,預先接通。At this time, the first shared control signal (SHP) is converted before the source control signal (UP_bbb), and the second shared control signal (SHN) is adjusted by the timing controller 500. Conversion is performed prior to the absorption control signal (DN_bb). Therefore, the first common transistor (MN5) is turned on before the source switch (MP3) is turned off, and the second common transistor (MP5) is pre-arranged before the absorption switch (MN3) is turned off. Turn on.
另外,第二延遲單元530,決定所述第一及第二共用電晶體(MN5、MP5)保持接通狀態之時間,並連接於所述觸發器520之輸出端(Qb)和復位端(Rn)之間,將經延遲之信號載入為觸 發器之重定信號,從而轉換所述第一及第二共用控制信號(SHP、SHN),接通所述第一及第二共用電晶體。In addition, the second delay unit 530 determines a time when the first and second common transistors (MN5, MP5) remain in an ON state, and is connected to an output terminal (Qb) and a reset terminal (Rn) of the flip-flop 520. Between the delay signal is loaded into the touch The reset signal of the transmitter converts the first and second common control signals (SHP, SHN) to turn on the first and second common transistors.
下面,將說明所述構成之本發明可控制共用電晶體接通時間之電荷泵之作用。Next, the action of the charge pump of the present invention which can control the on-time of the common transistor will be explained.
圖5為根據本發明在定時控制器控制電晶體接通時間之控制信號時距圖。Figure 5 is a timing diagram of control signals for controlling the on-time of the transistor at the timing controller in accordance with the present invention.
如圖5所示,首先在相位檢測器(PFD)中,若正脈衝之源控制信號(UP_b)載入至所述定時控制器之第一延遲單元(Delay Cell A),則將輸出延遲一定時間之源控制信號(UP_bbb)並載入至源開關(MP3)。As shown in FIG. 5, first, in the phase detector (PFD), if the source control signal (UP_b) of the positive pulse is loaded to the first delay unit (Delay Cell A) of the timing controller, the output delay is fixed. The source of time control signal (UP_bbb) is loaded to the source switch (MP3).
此時,在所述源控制信號(UP_bbb)保持1之時間內,所述源開關(MP3)和第一共用電晶體(MN5)都處於切斷狀態,而若所述源控制信號(UP_bbb)從1轉換至0,則所述第一共用電晶體(MN5)仍保持切斷狀態,但所述源開關(MP3)將接通,使源電流(I1 )從電壓源(Vdd)通過源開關(MP3)和第一控制開關(MP2),流向輸出端子(Vout)。所述流動之源電流(I1 )為動態電流(I3 ),將傳遞至環路濾波器(Loop Filter),在電容器中聚積電荷並調整電壓。At this time, the source switch (MP3) and the first common transistor (MN5) are both in the off state while the source control signal (UP_bbb) is held for 1, and if the source control signal (UP_bbb) Switching from 1 to 0, the first common transistor (MN5) remains off, but the source switch (MP3) will be turned on, causing the source current (I 1 ) to pass from the voltage source (Vdd) through the source. The switch (MP3) and the first control switch (MP2) flow to the output terminal (Vout). The source current (I 1 ) of the flow is a dynamic current (I 3 ) that is passed to a loop filter to accumulate charge and adjust the voltage in the capacitor.
之後,聚積相當於所述相位檢測器(PFD)之輸出脈衝之電荷之後,在切斷所述源開關(MP3)之前,經所述定時控制器調整 之第一共用控制信號(SHP),首先從0轉換為1。因此,所述第一共用電晶體(MN5)將被接通,原來通過源開關(MP3)流動之電流之一部分(I4 )流入,提高節點A(node A)之電壓電平。Thereafter, after accumulating the charge corresponding to the output pulse of the phase detector (PFD), the first common control signal (SHP) is adjusted by the timing controller before the source switch (MP3) is turned off, first Convert from 0 to 1. Therefore, the first common transistor (MN5) will be turned on, and a portion (I 4 ) of the current originally flowing through the source switch (MP3) flows in, raising the voltage level of the node A (node A).
另外,所述第一共用電晶體(MN5)被接通並提高節點A之電壓電平之後,載入從0轉換至1之所述源控制信號(UP_bbb),從而切斷所述源開關(MP3)。此時,切斷所述源開關之後,因所述節點A已提高至一定電壓電平,不與輸出端子(Vout)產生電壓差,從而不會產生反向電流或其值很小。In addition, after the first common transistor (MN5) is turned on and the voltage level of the node A is raised, the source control signal (UP_bbb) that is switched from 0 to 1 is loaded, thereby cutting off the source switch ( MP3). At this time, after the source switch is turned off, since the node A has been raised to a certain voltage level, a voltage difference is not generated with the output terminal (Vout), so that no reverse current is generated or its value is small.
另外,在相位檢測器(PFD)中,若負脈衝之吸收控制信號(DN)載入至所述定時控制器之第一延遲單元(Delay Cell A),則將輸出延遲一定時間之吸收控制信號(DN_bb)並載入至吸收開關(MN3)。In addition, in the phase detector (PFD), if the absorption control signal (DN) of the negative pulse is loaded to the first delay unit (Delay Cell A) of the timing controller, the absorption control signal delayed by a certain time is outputted. (DN_bb) and loaded into the absorption switch (MN3).
此時,在所述吸收控制信號(DN_bb)保持0之時間內,所述吸收開關(MN3)和第二共用電晶體(MP5)都處於切斷狀態,而若所述吸收控制信號(DN_bb)從0轉換至1,則所述第二共用電晶體(MP5)仍保持切斷狀態,但所述吸收開關(MN3)將接通,並為擠出聚積於所述環路濾波器之電荷,吸收電流(I2 )從輸出端子(Vout)通過第二控制開關(MN2)和吸收開關(MN3),流向接地電源(GND)。所述流動之吸收電流(I2 )為動態電流(I3 ),將放射聚積於電容器之電荷並調整電壓。At this time, the absorption switch (MN3) and the second common transistor (MP5) are both in the off state while the absorption control signal (DN_bb) remains 0, and if the absorption control signal (DN_bb) Switching from 0 to 1, the second common transistor (MP5) remains in the off state, but the absorption switch (MN3) will be turned on and the charge accumulated in the loop filter is extruded. The absorption current (I 2 ) flows from the output terminal (Vout) to the ground power source (GND) through the second control switch (MN2) and the absorption switch (MN3). The absorption current (I 2 ) of the flow is a dynamic current (I 3 ), which accumulates the charge of the capacitor and adjusts the voltage.
之後,放射相當於所述相位檢測器(PFD)之輸出脈衝之電荷之後,在切斷所述吸收開關(MN3)之前,經所述定時控制器調整之第二共用控制信號(SHN),首先從1轉換為0。因此,所述第二共用電晶體(MP5)將被接通,電流(I5 )從電壓源(Vdd)通過第二共用電晶體(MP5)和吸收開關(MN3)流動,提高節點B(node B)之電壓電平。Thereafter, after emitting the charge corresponding to the output pulse of the phase detector (PFD), the second common control signal (SHN) is adjusted by the timing controller before the absorption switch (MN3) is turned off, first Convert from 1 to 0. Therefore, the second common transistor (MP5) will be turned on, and the current (I 5 ) flows from the voltage source (Vdd) through the second common transistor (MP5) and the absorption switch (MN3), thereby improving the node B (node). B) The voltage level.
另外,所述第二共用電晶體(MP5)被接通並提高節點B之電壓電平之後,載入從1轉換至0之所述吸收控制信號(DN_bb),從而切斷所述吸收開關(MN3)。此時,切斷所述吸收開關之後,因所述節點B已提高至一定電壓電平,不與輸出端子(Vout)產生電壓差,從而不會產生反向電流或其值很小。In addition, after the second common transistor (MP5) is turned on and raises the voltage level of the node B, the absorption control signal (DN_bb) that is switched from 1 to 0 is loaded, thereby cutting off the absorption switch ( MN3). At this time, after the absorption switch is turned off, since the node B has been raised to a certain voltage level, a voltage difference is not generated with the output terminal (Vout), so that no reverse current is generated or its value is small.
如上所述,所述定時控制器預先識別來自相位檢測器之源控制信號(UP_b)和吸收控制信號(DN)之轉換狀態,在切斷源開關(MP3)或吸收開關(MN3)之前,首先接通第一共用電晶體(MN5)或第二共用電晶體(MP5),使節點A或節點B保持一定電壓電平,防止源開關(MP3)或吸收開關(MN3)切斷之後,反向電流所導致之動態電流之變動。As described above, the timing controller recognizes in advance the transition state of the source control signal (UP_b) and the absorption control signal (DN) from the phase detector, before cutting off the source switch (MP3) or the absorption switch (MN3), first Turn on the first common transistor (MN5) or the second common transistor (MP5) to keep the node A or the node B at a certain voltage level, and prevent the source switch (MP3) or the absorption switch (MN3) from being turned off. The change in dynamic current caused by current.
另外,通過將具備於所述定時控制器之第二延遲單元(Delay Cell B)530之輸出作為輸入之觸發器520,經過一定時間之後,所述第一共用控制信號(SHP)將重新轉換為0,而所述第二共用 控制信號(SHN)將重新轉換為1,從而切斷第一及第二共用電晶體(MN5、MP5)。Further, by using the output of the second delay unit (Delay Cell B) 530 of the timing controller as an input flip-flop 520, after a certain period of time, the first common control signal (SHP) is reconverted to 0, and the second share The control signal (SHN) will be reconverted to 1, thereby cutting off the first and second common transistors (MN5, MP5).
因此,如上所述,先於切斷所述源開關(MP3)和吸收開關(MN3)之控制信號,載入接通第一及第二電晶體(MN5、MP5)之共用控制信號,使第一及第二控制開關之一端子保持一定電壓電平,防止源控制信號及吸收控制信號轉換時所產生之反向電流,從而如圖6之圖表所示,即使輸出端子(Vout)之電壓高或低,也可保持穩定之動態電流,可更準確地模擬輸出端子(Vout)之定量資訊,獲得接近於理論之結果。Therefore, as described above, the common control signal for turning on the first and second transistors (MN5, MP5) is loaded before the control signal of the source switch (MP3) and the absorption switch (MN3) is turned off, so that One of the terminals of the first and second control switches maintains a certain voltage level to prevent the reverse current generated when the source control signal and the absorption control signal are switched, so that the voltage of the output terminal (Vout) is high as shown in the graph of FIG. Or low, can also maintain a stable dynamic current, can more accurately simulate the quantitative information of the output terminal (Vout), get close to the theoretical results.
即,先前技術中,在切斷源開關和吸收開關之後,直至節點A(node A)和節點B(node B)達到一定電壓電平之前,在輸出端子(Vout)和節點A及節點B之間發生電壓分配,從而產生反向電流,出現如圖6所示之源電流(I1 )、吸收電流(I2 )及動態電流(I3 )中虛線示出之波形,但若根據本發明預先接通第一及第二共用電晶體(MN5、MP5),使節點A和節點B首先達到一定電壓電平,則在切斷所述源開關(MP3)和吸收開關(MN3)之後,不會產生反向電流,從而使所述源電流(I1 )、吸收電流(I2 )及動態電流(I3 ),只表現出用直線示出之波形。That is, in the prior art, after the source switch and the sink switch are turned off, until the node A (node A) and the node B (node B) reach a certain voltage level, at the output terminal (Vout) and the node A and the node B Voltage distribution occurs to generate a reverse current, and a waveform shown by a broken line in the source current (I 1 ), the absorption current (I 2 ), and the dynamic current (I 3 ) as shown in FIG. 6 appears, but according to the present invention The first and second common transistors (MN5, MP5) are turned on in advance, so that the node A and the node B first reach a certain voltage level, and after the source switch (MP3) and the absorption switch (MN3) are turned off, A reverse current is generated such that the source current (I 1 ), the sink current (I 2 ), and the dynamic current (I 3 ) exhibit only waveforms shown by straight lines.
本發明已由所述相關實施例加以描述,然而所述實施例僅為實施本發明之範例。必需指出的是,已揭露之實施例並未限制本發 明之範圍。相反地,包含於申請專利範圍之精神及範圍之修改及均等設置均包含于本發明之範圍內。The present invention has been described by the related embodiments, but the embodiments are merely examples for implementing the invention. It must be pointed out that the disclosed embodiments do not limit the present invention. The scope of the Ming. On the contrary, modifications and equivalents of the spirit and scope of the invention are included in the scope of the invention.
100‧‧‧電流源部100‧‧‧ Current Source Division
200‧‧‧電流吸收部200‧‧‧ Current Absorption Department
300‧‧‧標準電流供應部300‧‧‧Standard Current Supply Department
400‧‧‧共用部400‧‧ ‧Shared Department
500‧‧‧定時控制器500‧‧‧Time Controller
510‧‧‧第一延遲單元510‧‧‧First delay unit
520‧‧‧觸發器520‧‧‧ Trigger
530‧‧‧第二延遲單元530‧‧‧second delay unit
圖1為先前電荷泵電路圖;圖2為利用先前電荷泵之輸出電壓和電流圖表;圖3為本發明可控制共用電晶體接通時間之電荷泵電路圖;圖4為本發明定時控制器結構圖;圖5為根據本發明在定時控制器控制電晶體接通時間之控制信號時距圖;圖6為本發明可控制共用電晶體接通時間之電荷泵之輸出電壓和電流圖表。1 is a previous charge pump circuit diagram; FIG. 2 is a diagram of an output voltage and current using a previous charge pump; FIG. 3 is a circuit diagram of a charge pump capable of controlling a common transistor turn-on time according to the present invention; FIG. 5 is a timing diagram of a control signal for controlling the on-time of the transistor in the timing controller according to the present invention; FIG. 6 is a graph showing the output voltage and current of the charge pump capable of controlling the on-time of the common transistor according to the present invention.
100...電流源部100. . . Current source
200...電流吸收部200. . . Current absorbing part
300...標準電流供應部300. . . Standard current supply
400...共用部400. . . Sharing department
500...定時控制器500. . . Timing controller
Claims (5)
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TW098130101A TWI489752B (en) | 2009-09-07 | 2009-09-07 | Charge pump for controllable turn on time of sharing transistor |
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TW098130101A TWI489752B (en) | 2009-09-07 | 2009-09-07 | Charge pump for controllable turn on time of sharing transistor |
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TWI489752B true TWI489752B (en) | 2015-06-21 |
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Citations (2)
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TW513846B (en) * | 2000-03-31 | 2002-12-11 | Sanyo Electric Co | Charge pump-type power source circuit, display device driving apparatus using such power source circuit and display device |
US20040130364A1 (en) * | 2002-12-26 | 2004-07-08 | Norihito Suzuki | Charge pump circuit and PLL circuit using same |
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2009
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Publication number | Priority date | Publication date | Assignee | Title |
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TW513846B (en) * | 2000-03-31 | 2002-12-11 | Sanyo Electric Co | Charge pump-type power source circuit, display device driving apparatus using such power source circuit and display device |
US20040130364A1 (en) * | 2002-12-26 | 2004-07-08 | Norihito Suzuki | Charge pump circuit and PLL circuit using same |
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