TWI488944B - 用以降低入射光反射率之單晶半導體基板之紋理化 - Google Patents

用以降低入射光反射率之單晶半導體基板之紋理化 Download PDF

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Publication number
TWI488944B
TWI488944B TW102122930A TW102122930A TWI488944B TW I488944 B TWI488944 B TW I488944B TW 102122930 A TW102122930 A TW 102122930A TW 102122930 A TW102122930 A TW 102122930A TW I488944 B TWI488944 B TW I488944B
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TW
Taiwan
Prior art keywords
solution
texturing
wafer
single crystal
textured
Prior art date
Application number
TW102122930A
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English (en)
Chinese (zh)
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TW201418417A (zh
Inventor
羅伯特Ｋ 巴爾
寇利 歐康納
彼得Ｗ 欣克利
喬治Ｒ 國阿蒂斯
Original Assignee
羅門哈斯電子材料有限公司
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Application filed by 羅門哈斯電子材料有限公司 filed Critical 羅門哈斯電子材料有限公司
Publication of TW201418417A publication Critical patent/TW201418417A/zh
Application granted granted Critical
Publication of TWI488944B publication Critical patent/TWI488944B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
TW102122930A 2012-06-27 2013-06-27 用以降低入射光反射率之單晶半導體基板之紋理化 TWI488944B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/535,224 US20140004701A1 (en) 2012-06-27 2012-06-27 Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance

Publications (2)

Publication Number Publication Date
TW201418417A TW201418417A (zh) 2014-05-16
TWI488944B true TWI488944B (zh) 2015-06-21

Family

ID=48699591

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102122930A TWI488944B (zh) 2012-06-27 2013-06-27 用以降低入射光反射率之單晶半導體基板之紋理化

Country Status (6)

Country Link
US (1) US20140004701A1 (https=)
EP (1) EP2680314A1 (https=)
JP (1) JP2014013895A (https=)
KR (1) KR20140004010A (https=)
CN (1) CN103515481B (https=)
TW (1) TWI488944B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022172907A1 (https=) * 2021-02-10 2022-08-18

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120118569A1 (en) * 2010-11-16 2012-05-17 Jay Paul Deville Oxygen Scavenger Compositions for Completion Brines
CN102479698A (zh) * 2010-11-24 2012-05-30 气体产品与化学公司 用于硅片制绒的组合物和方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001351906A (ja) * 2000-06-06 2001-12-21 Canon Inc シリコン基板のエッチング方法
CN102017176A (zh) * 2008-03-25 2011-04-13 应用材料股份有限公司 结晶太阳能电池的表面清洁与纹理化工艺
US7955989B2 (en) * 2009-09-24 2011-06-07 Rohm And Haas Electronic Materials Llc Texturing semiconductor substrates
CN101661972B (zh) * 2009-09-28 2011-07-20 浙江大学 一种低表面反射率的单晶硅太阳电池绒面制作工艺
US20110151671A1 (en) * 2009-12-17 2011-06-23 Rohm And Haas Electronic Materials Llc method of texturing semiconductor substrates
CN102181935B (zh) * 2010-10-26 2012-09-19 浚鑫科技股份有限公司 一种制作单晶硅绒面的方法及腐蚀液

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120118569A1 (en) * 2010-11-16 2012-05-17 Jay Paul Deville Oxygen Scavenger Compositions for Completion Brines
CN102479698A (zh) * 2010-11-24 2012-05-30 气体产品与化学公司 用于硅片制绒的组合物和方法

Also Published As

Publication number Publication date
JP2014013895A (ja) 2014-01-23
TW201418417A (zh) 2014-05-16
CN103515481A (zh) 2014-01-15
EP2680314A1 (en) 2014-01-01
KR20140004010A (ko) 2014-01-10
CN103515481B (zh) 2016-07-06
US20140004701A1 (en) 2014-01-02

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