TWI486645B - A color filter substrate - Google Patents

Description

Color filter substrate

The present invention relates to a color filter substrate, and more particularly to a thin color filter substrate capable of effectively reducing the oblique color shift phenomenon in the case of satisfying high resolution and high color saturation.

The color filter substrate is widely used in a display device. In the process of a general color filter substrate, first, a black matrix is disposed on the substrate, and then a plurality of color photoresists are disposed on the black matrix and the substrate, and then in the colored light. A flat layer is provided on the upper layer. Among them, there are three kinds of color photoresists, which can respectively transmit light of three different colors, such as red, green, blue light and the like. Among them, the black matrix is located between adjacent color photoresists, mainly for blocking stray light and preventing color mixing.

As shown in FIG. 1, it is a cross-sectional view of a color filter substrate 100 of the prior art. In the prior art, the black matrix 120 is located on the substrate 110; the color photoresist 130 includes a first color photoresist 131, a second color photoresist 132, and a third color photoresist 133, located between the black matrix 120 and located on the substrate. Above the black matrix 120; the flat layer 140 is above the color photoresist 130. When the first color photoresist 131, the second color photoresist 132, and the third color photoresist 133 are sequentially formed, if the color photoresist 130 has a climbing phenomenon above the black matrix 120, that is, the adjacent color photoresist 131 is black. A portion of the overlapping protrusion 134 is formed above the matrix 120. The overlapping protrusion 134 is a protrusion, which causes the flatness of the subsequently formed flat layer 140 to be insufficient, so that the flat layer needs to be increased in order to achieve a certain flatness. The thickness of 140.

Meanwhile, the color filter substrate shown in FIG. 1 is liable to cause a problem of oblique color shift. Figure 2 is a schematic diagram showing the phenomenon of oblique color shift in the color filter substrate in the prior art. Since the black matrix 120 is located above the substrate 110 in the prior art, the color photoresist 130 is located between the black matrixes 120 and is located above the substrate 110 and the black matrix 120. The intermediate portion 135 after the upper surface of the color resist 130 is removed from the overlapping projection 134 is flat That is, the intermediate portion 135 is parallel to the interface of the color photoresist 130 and the substrate 110. When the observer observes the light transmitted from the color photoresist 130 through the color filter substrate 100, the front view (the line of sight is perpendicular to the substrate 110) and the squint (the line of sight is at an angle to the substrate 110, such as greater than 0° and less than 90°). When the display is illuminated, the light path from the display passes through the color resist 130 is different. The optical path of the light in squint is generally greater than the optical path of the light in front view, that is, when the observer is facing and squinting the display. An optical path difference is generated, resulting in an oblique color shift phenomenon. At present, the color saturation of the display panel can be improved by increasing the thickness of the color photoresist film, but the larger the film thickness of the color photoresist, the more likely the oblique color shift phenomenon occurs. In this way, even if the high film thickness of the color photoresist can improve the color saturation, the color film can not be designed with a high film thickness.

The present invention provides a color filter substrate capable of reducing the problem of oblique color shift in the case of satisfying high resolution and high color saturation.

The invention provides a color filter substrate, wherein the color filter substrate comprises a plurality of color photoresists on the substrate, the plurality of color photoresists each have a curved surface shape; and a black matrix is located adjacent to the color photoresist And located above the edge portion of the color photoresist; a flat layer is located above the color photoresist and the black matrix.

According to the present invention, a plurality of color photoresists are first formed on a substrate, the color photoresist has a curved surface shape, and a lower surface of the color photoresist is bonded to the substrate, and an upper surface of the color photoresist is an arc shape. That is, the curved surface of the upper surface of the color resist is an upward convex arc, the color photoresist has an edge portion, and adjacent color photoresists are in contact with each other, and a concave portion is formed between adjacent color photoresists. The black matrix is located at a recessed portion between adjacent color photoresists and covers a portion of the color photoresist, that is, the black matrix is located above the edge portion of the color photoresist, such that the adjacent color photoresist is caused by the overlapping of the edge portions. Will be covered by the black matrix after forming the black matrix without directly affecting the flatness of the subsequent flat layer, that is, the thickness of the flat layer can be reduced while ensuring that the flat layer has good flatness, thereby A thinner color filter substrate is formed.

According to the present invention, the color photoresist has a curved surface shape, and the upper surface of the color photoresist is An arc shape, that is, an arc shape of the upper surface of the color photoresist is an upward convex arc, and a radius of curvature of the upper surface of the color photoresist is small, and a radius of curvature of the upper surface of the color photoresist is smaller than a lower surface of the color photoresist The length, even if the center of curvature of the upper surface of the color resist is located near the lower surface of the color resist, preferably, the center of curvature of the upper surface of the color resist is located just below the surface of the color photoresist, so that the observer is In the case of a front view and a squint display, the distance from the light transmitted through the color filter substrate to the color resist is similar or the same, that is, the optical path of the light passing through the color resist is close or the same, which can reduce the oblique color shift or eliminate the oblique To the color cast.

According to the present invention, since the color photoresist has a curved surface shape, the upper surface of the color photoresist is curved, and the thickness of the color photoresist can be appropriately increased to increase the color saturation of the color photoresist. Meanwhile, since the color photoresist has a curved surface shape, the black matrix is located at a recessed portion between adjacent color photoresists and is located above the edge portion of the color photoresist, that is, the black matrix is disposed according to the edge portion of the color photoresist Therefore, it is possible to effectively save space and produce a smaller number of color photoresists while ensuring a visible range, thereby producing a color filter substrate that satisfies high resolution requirements.

The invention provides a method for manufacturing a color filter substrate, firstly providing a substrate on which a first color resist material is formed; a photomask disposed above the first color resist material; and a first color resist through the photomask The material is exposed, the exposure mode is weak exposure; the first color resist material is etched; after the etching is completed, thereby forming a first color photoresist, the first color photoresist has a curved surface shape; subsequently, sequentially on the substrate Forming a second color photoresist and a third color photoresist, such that a plurality of color photoresists are formed on the entire substrate, the plurality of color photoresists each having a curved surface shape, and the upper surface of the color photoresist is an arc shape. The radius of curvature of the upper surface is smaller, and the radius of curvature of the curved surface of the upper surface of the color photoresist is smaller than the length of the lower surface of the color photoresist, that is, the center of curvature of the upper surface of the color photoresist is located near the lower surface of the color photoresist. Preferably, the center of curvature of the upper surface of the color photoresist is located at the lower surface of the color photoresist, and the adjacent color photoresists are in contact with each other, and a concave portion is formed between the adjacent color photoresists; Then, a black matrix is formed on the color photoresist, the black matrix is located in the concave portion between the adjacent color photoresists and covers part of the color photoresist, and is located above the edge portion of the color photoresist; finally, above the color photoresist and the black matrix A flat layer is formed.

A method for manufacturing a color filter substrate as described above is to use a color resist material to produce a color photoresist. When the film thickness of the color photoresist is increased to meet the requirement of high color saturation, the light transmittance of the color photoresist is In order to solve the problem of the decrease of the color resist light transmittance under high color saturation, a color resist material having a small color of a paste molecule is used.

A method of manufacturing a color filter substrate as described above is to form a color photoresist using a color resist material, which is a color resist material having a low sensitivity.

A method of manufacturing a color filter substrate as described above is to provide a photomask having an opening portion and a light shielding portion above the color resist material, to reduce the intensity of the exposure light, and to weakly expose the color resist material. The sensitivity of the color resist material is low, the sufficient photosensitive portion of the color resist material is retained during the subsequent etching process, the unphotosensitive portion is etched away during the etching process, and the weak photosensitive portion is partially etched during the etching process. At the same time, it is partially retained.

The third drawing is a cross-sectional view of the color filter substrate in the present invention. As shown in the third figure, the color filter substrate 200 of the present invention comprises a substrate 210, wherein the substrate 210 is made of a light transmissive material; a color photoresist 230 is disposed on the substrate 210, wherein The color photoresist 230 has a curved surface shape, the lower surface 202 is in contact with the substrate 210, and the upper surface 201 is curved. The color photoresist 230 has an edge portion 204 and adjacent color photoresists 230. In contact with each other, a recessed portion 203 is formed between the adjacent color resists 230; a black matrix 220 is disposed between the two adjacent color resists 230, that is, the black matrix 220 is disposed adjacent to the adjacent color photoresist 230. A recessed portion 203 is formed; a flat layer 240 is disposed above the color photoresist 230 and the black matrix 220.

The color photoresist 230 further includes a first color photoresist 231, a second color photoresist 232, and a third color photoresist 233, and is arranged alternately on the substrate 210. For example, but not limited to three kinds of color photoresists, for example, R (red), green (G), blue (B), white (W) four color photoresists or other color resist combinations can also be used. The three kinds of color photoresists are made of three different color resist materials (such as resin materials), which can transmit incident light through different color photoresists to filter out light of different wavelengths, such as red and green. , blue light, etc., wherein the color resist 230 is designed to have a curved surface The lower surface 202 is in contact with and bonded to the substrate 210, and the upper surface 201 is curved, that is, the curved surface of the upper surface 201 of the color resist 230 is an upward convex arc, such as the fourth (a) FIG. 4(b) is a cross-sectional view showing a specific shape of a single color photoresist 230. The upper surface 201 of the color resist 230 has a smaller radius of curvature R, and the radius of curvature R is smaller than the lower surface of the color resist 230. The length H of 202, that is, the center of curvature O of its upper surface 201 is located near the lower surface 202 of the color resist 230, the closer the center of curvature O is to the lower surface 202, the better, the upper of the color resist 230 The radius of curvature R of the surface 201 is equal to half the length H of the lower surface 202, that is, the center of curvature O of the upper surface 201 is located at the lower surface 202 even if the color resist 230 is a hemisphere, in the fourth (a) The radius of curvature R of the upper surface 201 of the color resist 230 is smaller than the length H of the lower surface 202 and greater than 1/2H (the center of curvature O of the upper surface 201 is located near the lower surface 202), and the color photoresist 230 in the fourth (b) The radius of curvature R of the upper surface 201 is equal to half the length H of the lower surface 202 (the center of curvature of the upper surface 201 is exactly The lower surface 202), of course, is a condition that needs to be satisfied in the case where the curved surface of the upper surface 201 of the color resist 230 is a standard arc (having a radius of curvature), and in many cases, The curved shape of the upper surface 201 of the color resist 230 may also be a non-standard arc (having a plurality of curvature radii, such as an arc formed by an elliptical arc or other continuous curve), at this time, The irregular radius of the non-standard arc may be set to be smaller than the length of the lower surface 202 of the color resist 230, or at least the center of curvature of an arc of the center of the non-standard arc is disposed at the color resist 230 is in the vicinity of the lower surface 202. Thus, the color saturation of the color resist 230 can be improved by appropriately increasing the film thickness of the color resist 230. At this time, since the film thickness of the color resist 230 is increased, the light transmittance thereof is increased. However, the film thickness is reduced due to the increase in film thickness. However, in order to solve the problem of the light transmittance of the color resist 230 being reduced, the color resist 230 is a color resist material having a small color of a paste molecule, that is, adding color light. Block 230 film thickness So that the light transmittance is not affected. Since the upper surface 201 of the color resist 230 is an arc shape, the first color photoresist 231, the second color photoresist 232, and the third color photoresist 233 are alternately arranged in sequence when disposed on the substrate 210. And adjacent color resists 230 are in contact with each other, so a recessed portion is formed between adjacent color resists 230 203.

Further, the black matrix 220 is a color resist 230 disposed on the recessed portion 203 formed between the adjacent color resists 230 and covering the portion, and is located on the edge portion 204 of the color photoresist 230 due to black. The matrix 220 is located in the recessed portion 203 between the adjacent color resists 230, and can expand the visible range of the color resist 230 while effectively saving space, that is, the black matrix 220 is in accordance with the edge portion 204 of the color resist 230. The upper surface 201 is disposed in an arc shape to expand the visible range of the bottom of the color photoresist 230, so that the size of the color photoresist 230 can be reduced and the number of colors can be reduced while ensuring the same size of the visible range. The color resist 230 allows the color filter substrate 200 to meet the requirements of high resolution. The black matrix 220 is an opaque material that blocks at least visible light.

The flat layer 240 is located above the color photoresist 230 and the black matrix 220, and the flat layer 240 is a transparent insulating material. Generally, when the color resist 230 is formed, a part of the overlapping regions are formed between the adjacent color resists 230. In the present invention, even if a part of the overlapping regions are formed between the adjacent color resists 230, However, the overlapping area will first be covered by the black matrix 220, and does not directly affect the formation of the subsequent flat layer, that is, in the present invention, the overlapping convex portion as shown in the first figure is not generated before the flat layer is formed. (As shown in the first figure, the overlapping protrusions 134 need to form a thicker flat layer 140 in order to make the flatness of the flat layer 140 better.) Thus, the flatness of the flat layer 240 can be ensured. The thickness of the formed flat layer 240 is reduced, thereby reducing the thickness of the formed color filter substrate 200.

As shown in the fifth, sixth (a), and sixth (b) drawings, the color filter substrate of the present invention is a schematic diagram for improving the oblique color shift phenomenon. As shown in FIG. 5, the color photoresist 230 on the color filter substrate 200 of the present invention is located above the substrate 210. For each color photoresist 230, the first color photoresist 231 and the second color photoresist 232 are included. And the third color resist 233, wherein the upper surface 201 is an arc, that is, the upper surface 201 of the color resist 230 has an upward convex arc shape, and the upper surface 201 has a small radius of curvature R, and the radius of curvature R Less than the length H of the lower surface 202 of the color resist 230, even if the center of curvature of the upper surface 201 is O Located near the lower surface 202 of the color resist 230, the closer the curvature center O is to the lower surface 202, the better, the radius of curvature R of the upper surface 201 of the color resist 230 is equal to the length H of the lower surface 202. Half, that is, the center of curvature O of the upper surface 201 is located at the lower surface 202, even if the color resist 230 is a hemisphere, such that when the observer is facing (the line of sight is perpendicular to the substrate 210) and the squint (the line of sight is aligned with the substrate 210) When the display is at a certain angle, such as greater than 0° and less than 90°, the distance from the color filter substrate 200 through the color photoresist 230 is L1 and L2 (in general, the size of the color resist 230) All are on the order of micrometers. Regardless of the front view or the squint display, most of the light passing through the color resist 230 received by the human eye passes near the center point of the lower surface 202 of the color resist 230. L1 and L2 are similar or identical, most Preferably, the distances L1 and L2 are the same and are the magnitude of the radius of curvature R of the upper surface 201 of the color resist 230. As shown in the sixth (a) diagram, the radius of curvature of the upper surface 201 of the color resist 230 is smaller than The lower surface 202 has a length H and is greater than 1/2H (the center of curvature O of the upper surface 201 is located near the lower surface 202), and when the light is passed through the color photoresist 230, the distances L1 and L2 are similar when viewed from the front and the squint display, as shown in the sixth (b). The radius of curvature R of the upper surface of the color resist 230 is equal to half of the length H of the lower surface 202 (the center of curvature of the upper surface 201 is located exactly at the lower surface 202), and the light passes through the color photoresist when facing and squinting the display. The distances L1 and L2 of the 230 o'clock are equal in size and equal to the radius of curvature R of the upper surface 201. Thus, the light paths from the color filter substrate 200 pass through the color photoresist 230 are close or the same, that is, the observer faces When compared with a squint display, the resulting optical path difference is small or does not produce an optical path difference. Therefore, the color filter substrate 200 can effectively improve the oblique color shift phenomenon.

The seventh to tenth drawings are flowcharts for fabricating a color filter substrate in the present invention. As shown in the seventh figure, a substrate 210 is first provided, which is made of a transparent material that is transparent to visible light. Then, a first color resist material 250 is formed on the substrate 210, and the first color resist material 250 is a negative photoresist. The first color resist material 250 is a color resist material having a lower sensitivity, that is, the first color. The resistive material 250 is mainly sensitive to light, that is, the light intensity needs to reach a certain value, and the first color resist material 250 can fully react, if it is connected The received light intensity is small, the degree of reactivity will be small or not fully reacted or the reaction will be slow.

Continue to the next step, please also refer to the eighth and eleventh figures. As shown in the eighth figure, a photomask 900 is disposed above the first color resist material 250. The photomask 900 has an opening portion 901 and a light shielding portion 903. The opening portion 901 allows light to pass therethrough, and the light shielding portion 903 does not allow Light passes. Then, the first color resist material 250 is exposed through the mask 900. The exposure mode uses a weak exposure, that is, the intensity of the exposure is weak, and the first color resist material 250 is a color resist material having a lower sensitivity, that is, The first color resist material 250 has low sensitivity to light. During the weak exposure process, the light intensity received on the first color resist material 250 does not reach a certain intensity portion, and the reactivity is higher. Small or unable to fully react or react slowly, and the portion of the first color resist material 250 that receives a certain intensity of light can be fully reacted. At this time, please refer to the eleventh figure, after weak exposure. The first color resist material 250 located directly below the center of the opening portion 901 of the mask 900 has the strongest light intensity to become the sufficient photosensitive portion 251, and is located at the first color resist below the boundary between the opening portion 901 and the light blocking portion 903 of the mask 900. The light intensity received by the material 250 becomes smaller as the weak photosensitive portion 252, and the first color resist material 250 located under the light shielding portion 903 of the reticle 900 does not receive light to become the unsensed portion 253.

Subsequently, the weakly exposed first color resist material 250 is etched, wherein the fully photosensitive portion 251 is completely retained, the unsensed portion 253 is completely etched away, and the weakly photosensitive portion 252 is partially etched away and partially retained. Come down. After the etching is completed, a plurality of first color photoresists 231 are formed, as shown in FIG. 9 , wherein the first color photoresist 231 is formed to have a curved shape, and reference is made to the fourth (a) and the fourth. (b) The upper surface 201 of the first color resist 231 is curved, and the curved shape is an upward convex arc. The upper surface 201 of the first color resist 231 has a small radius of curvature R. The radius of curvature R is smaller than the length H of the lower surface 202 of the color resist 231, that is, the center of curvature O of the upper surface 201 is located near the lower surface 202 of the first color photoresist 231, and the closer the center of curvature O is to the lower surface The better, the better, the radius of curvature of the upper surface 201 of the color resist 231 is equal to half the length H of the lower surface 202, that is, the center of curvature O of the upper surface 201 is located exactly at the lower surface 202, even if the color Guangzu 231 is a hemisphere. Subsequently, A plurality of second color photoresists 232 and a plurality of third color photoresists 233 are sequentially formed on the substrate 210 by the same method, and the second color photoresist 232 and the third color photoresist 233 are also a curved surface shape, that is, The upper surface 201 of the second color resist 232 and the third color resist 233 has an arc shape, and the arc has an upward convex arc shape, and the upper surface 201 has a smaller radius of curvature R, and the radius of curvature R is smaller than the The length H of the lower surface 202 of the color resist 230, that is, the center of curvature O of the upper surface 201 is located near the lower surface 202 of the second color resist 232 and the third color resist 233. Preferably, the center of curvature O is exactly Located at the lower surface 202, the shape and size of the first color photoresist 231 and the second color photoresist 232 and the third color photoresist 233 are the same. In the present invention, the color resist material used in the color resist 230 is a negative photoresist as an example to explain the present invention, but is not limited to the use of a negative photoresist. If a positive photoresist is used, a person skilled in the art can adopt a similar method. Principle implementation. The color resist materials used in the first color resist 231, the second color resist 232, and the third color resist 233 are different, and the three color resists respectively filter the incident light out of light of different wavelength bands. The first color photoresist 231, the second color photoresist 232, and the third color photoresist 233 are alternately arranged on the substrate 210, and the adjacent color photoresists 230 are in contact with each other, and thus are disposed on the entire substrate 210. The color resist 230 is filled, and a recessed portion 203 is formed between the adjacent color resists 230.

As shown in the tenth figure, a black matrix 220 is formed on the color filter substrate 200, and the black matrix 220 is located in the recessed portion 203 between the adjacent color photoresists 230 and covers a portion of the color photoresist 230, and is located in color. Above the edge portion 204 of the photoresist 230, the black matrix 220 can prevent color mixing between different color resists 230 while blocking stray light. The black matrix 220 is made of a material that is opaque to light, and may be a metal material or other opaque material. Next, a flat layer 240 is formed over the color resist 230 and the black matrix 220, and the flat layer 240 is made of a transparent insulating material such as tantalum nitride or the like.

As shown in the eleventh figure, it is a schematic diagram of the exposure process of the color resist in the present invention and the color resisting arc surface modeling. The invention uses the color resist material used in the color photoresist (color filter) as a negative photoresist as an example to explain the principle of the color resistive arc surface modeling of the present invention. Of course, when the color resist material is a color resist material, When using positive photoresist, you can use the same The basic principles and ideas to explain. In the present invention, when the color resist material is exposed, the exposure mode uses a weak exposure, that is, the intensity of the exposure is weak. For example, when the first color resist 231 is formed by exposing and etching the first color resist material 250, the second color resist 232 and the third color resist 233 are formed in the same principle. The weak light is irradiated onto the first color resist material 250 through the opening portion 901 of the reticle 900, and the light is diffracted when passing through the opening portion 901, and the range of the illumination is as shown by the long broken line in the eleventh figure. At this time, the first color The light intensity received by the resist material 250 is not uniform, and the intensity distribution of the light intensity received by the first color resist material 250 is as shown by the dotted line in FIG. 11 , wherein the vertical axis Y direction indicates the intensity of the light intensity. . As can be seen from the eleventh diagram, the intensity of the light intensity is the largest in the center of the opening portion 901, and the light intensity is smaller as it goes to the side. At the same time, since the sensitivity of the first color resist material 250 is low, the intensity of the light intensity reaches a certain value, and the first color resist material 250 can fully react, and the fully photosensitive and fully reacted color resist material will be in the subsequent etching process. Be kept. Since the intensity of the central light intensity at the center of the opening portion 901 is the largest, the portion of the first color resist material 250 located directly below the center of the opening portion 901 can be sufficiently sensitized to sufficiently react, and this portion becomes the sufficiently photosensitive portion 251. The first color resist material 250 is located at a portion of the photomask 900 having a weak light-sensitive portion below the boundary between the opening portion 901 and the light-shielding portion 903, and the received light intensity is small and cannot be sufficiently reacted, and the portion becomes the weak photosensitive portion 252. The first color resist material 250 located under the light shielding portion 903 of the reticle 900 is not sensitized and cannot be reacted, and this portion becomes the unsensitized portion 253. Therefore, in the subsequent etching process, the sufficient photosensitive portion 251 is completely strong and sufficiently reacted due to the exposure, and is completely retained during the etching process, and at the same time, since the sensitivity of the color resist material 250 is low, during exposure The light intensity received by the weak photosensitive portion 252 is weak, and the weak photosensitive portion 252 is insufficiently reacted and partially retained during the etching process while being partially etched away, while the unsensed portion 253 does not receive light during exposure. Without reaction, it is completely etched away during the etching process to form a first color photoresist 231 having a curved shape, as indicated by the dotted line in the eleventh figure. After the color resist 231 is formed, the color resist 232 and the color resist 233 are sequentially formed on the substrate 210 by the same principle, and the adjacent color resists 230 are in contact with each other.

The above is only the preferred embodiment of the present invention and is not intended to limit the present invention. The scope of the invention. Therefore, any changes or modifications of the shapes, structures, features and spirits described in the scope of the present invention should be included in the scope of the present invention.

100‧‧‧Color filter substrate

110‧‧‧Substrate

120‧‧‧Black matrix

130‧‧‧Color resist

131‧‧‧First color resist

132‧‧‧Second color photoresist

133‧‧‧ Third color photoresist

134‧‧‧Overlapping projections

135‧‧‧ middle part

140‧‧‧flat layer

200‧‧‧Color filter substrate

210‧‧‧Substrate

220‧‧‧Black matrix

230‧‧‧Color resist

240‧‧‧flat layer

201‧‧‧ upper surface

202‧‧‧lower surface

203‧‧‧ recessed part

204‧‧‧Edge

231‧‧‧First color resist

232‧‧‧Second color photoresist

233‧‧‧ Third color photoresist

250‧‧‧First color resist material

251‧‧‧ Fully photosensitive part

252‧‧‧Weakly sensitive part

253‧‧‧Unsensed parts

900‧‧‧Photomask

901‧‧‧ opening part

903‧‧‧ shading section

The first figure is a cross-sectional view of a prior art color filter substrate.

The second figure is a schematic diagram of the phenomenon that the color filter substrate produces oblique color shift in the prior art.

The third drawing is a cross-sectional view of the color filter substrate in the present invention.

The fourth (a) and fourth (b) drawings are sectional views of specific shapes of a single color resist.

The fifth, sixth (a), and sixth (b) drawings are schematic diagrams for improving the oblique color shift phenomenon of the color filter substrate in the present invention.

The seventh to tenth drawings are flowcharts for manufacturing a color filter substrate in the present invention.

The eleventh figure is a schematic diagram of the exposure process for producing a color resist in the present invention and realizing the color resisting arc surface modeling.

200‧‧‧Color filter substrate

210‧‧‧Substrate

220‧‧‧Black matrix

230‧‧‧Color resist

240‧‧‧flat layer

201‧‧‧ upper surface

202‧‧‧lower surface

203‧‧‧ recessed part

204‧‧‧Edge

231‧‧‧First color resist

232‧‧‧Second color photoresist

233‧‧‧ Third color photoresist

Claims (18)

A color filter substrate comprises: a substrate; a plurality of color photoresists disposed on the substrate and including an upper surface and a lower surface, the lower surface being in contact with the substrate, the upper surface being an arc, ie, the plurality The color photoresist has a curved surface shape, the color photoresist has an edge portion, and adjacent color photoresists are in contact with each other; a black matrix is located between the adjacent color photoresists and located at an edge portion of the color photoresist And a flat layer over the color photoresist and the black matrix. The color filter substrate according to claim 1, wherein the curved surface of the upper surface of the plurality of color photoresists has an upward convex arc shape. The color filter substrate according to claim 2, wherein the curved surface of the upper surface of the color resist is a standard arc shape, that is, the arc has a radius of curvature which is smaller than the color photoresist. The length of the surface, that is, the center of curvature of the upper surface of the color resist is located near the lower surface of the color resist. The color filter substrate according to claim 2, wherein the curved surface of the upper surface of the color resist has a curved shape, that is, the curved shape has a radius of curvature, and the radius of curvature is the color resist. Half of the surface length, that is, the center of curvature of the upper surface of the color photoresist is located exactly at the lower surface of the color resist. The color filter substrate of claim 2, wherein the curved surface of the upper surface of the color resist has an irregular arc shape, that is, the arc has a plurality of curvature radii, and the plurality of radii of curvature Less than the length of the lower surface of the colored photoresist. The color filter substrate of claim 2, wherein the curved surface of the upper surface of the color resist has an irregular arc shape, that is, the arc has a plurality of curvature radii, wherein at least one radius of curvature corresponds to The center of curvature is located at the lower surface of the colored photoresist. The color filter substrate according to claim 1, wherein the adjacent color The photoresists are in contact with each other, and a recessed portion is formed between the adjacent color photoresists. The color filter substrate of claim 7, wherein the black matrix is located at a recessed portion between adjacent color photoresists and is located above an edge portion of the color photoresist. A method for manufacturing a color filter substrate includes: providing a substrate; forming a color resist material on the substrate; providing a photomask over the color resist material; exposing the color resist material through the photomask, the exposure mode is weak Exposing; etching and developing the color resist material, patterning the color resist material to form a plurality of color photoresists, adjacent color photoresists are in contact with each other; the color photoresist has a lower surface in contact with the substrate, and an upper surface thereof is An arc shape, and the color photoresist has an edge portion; a black matrix is formed between adjacent color photoresists and over the color photoresist edge portion; and a flat layer is formed over the color photoresist and the black matrix. The method for manufacturing a color filter substrate according to claim 9, wherein the color resist material is a color resist material having a small color molecule, so that the color resist material has a good light transmittance. The method of manufacturing a color filter substrate according to claim 9, wherein the color resist material is a color resist material having a lower sensitivity. The method of manufacturing a color filter substrate according to claim 9, wherein the photomask has a light shielding portion and an opening portion. The method for manufacturing a color filter substrate according to claim 9, wherein after the color resist material is patterned, the color resist material has a curved surface shape, that is, the upper surface of the color resist material is curved. . The method for manufacturing a color filter substrate according to claim 13, wherein the color resist is formed after the color resist material is patterned, and the color resist has a The curved surface shape, that is, the upper surface of the color resist is an arc. The method for manufacturing a color filter substrate according to claim 14, wherein the curved surface of the upper surface of the color resist has a standard arc shape, that is, the arc has a radius of curvature, and the radius of curvature is smaller than the color. The length of the lower surface of the photoresist, that is, the center of curvature of the upper surface of the color resist is located near the lower surface of the color resist. The method for manufacturing a color filter substrate according to claim 14, wherein the curved surface of the upper surface of the color resist has a curved shape, that is, the curved shape has a radius of curvature, and the radius of curvature is the color Half of the length of the surface under the photoresist, that is, the center of curvature of the upper surface of the color resist is located just at the lower surface of the color resist. The method for manufacturing a color filter substrate according to claim 14, wherein the curved surface of the upper surface of the color resist has an irregular arc shape, that is, the arc has a plurality of curvature radii, the plurality of The radius of curvature is less than the length of the lower surface of the colored photoresist. The method for manufacturing a color filter substrate according to claim 14, wherein the curved surface of the upper surface of the color resist is a non-standard arc, that is, the arc has a plurality of radii of curvature, wherein at least one The center of curvature corresponding to the radius of curvature is located at the lower surface of the colored photoresist.