TWI485893B - A high power light emitting diode - Google Patents

Description

High-power light-emitting diode

The present invention relates to a light emitting diode structure, and more particularly to a structure of a high power light emitting diode.

Light Emitting Diode (LED) is a kind of compound semiconductor which emits energy in the form of light emission when it is combined by electron holes in P-type and N-type semiconductor materials. Because the light-emitting diode has the advantages of small volume, long life, low power consumption, fast reaction rate, etc., it has been widely used in optical display devices, communication devices and lighting equipment in recent years, and has become an indispensable photoelectric in daily life. element.

With the advancement of epitaxial technology and various needs, high-power LEDs have been developed on the market. The so-called high-power LEDs (High Power LEDs) mean consumption. Compared with the conventional light-emitting diode, the high-power light-emitting diode has a higher input power conversion rate than the conventional light-emitting diode.

In the packaging method of the conventional high-power LED, it is necessary to complete the steps of dispensing the lead frame and the illuminating die before dispensing and adding the lens. In addition, the lead frame under the die is inserted into the hole of the printed circuit board by a through hole method, and finally the circuit board is fixed by soldering. In addition to the complicated steps of the packaging method, and because the current common printed circuit board has poor thermal conductivity, the contact area of the metal lead frame and the light-emitting diode is small, so that the heat dissipation effect is limited, resulting in a high-power light-emitting diode. The heat energy accumulated after a long period of operation cannot be dissipated through the metal bracket or the circuit board, thereby reducing the luminous efficacy of the high-power light-emitting diode.

Accordingly, how to improve the structural design of the high-power light-emitting diode, improve the heat-dissipation efficiency during use, and thus keep the wafer at a low temperature state, and at the same time reduce the complexity of the process steps, which is still required by the current LED manufacturers. aims.

Therefore, the object of the present invention is to provide a high power light emitting diode for improving heat dissipation efficiency and reducing the complexity of the process.

According to the above object of the present invention, a high-power light-emitting diode is provided, which is disposed on a plane, and the light-emitting diode comprises a heat-conducting bracket, a first conductive bracket, a second conductive bracket, and an encapsulant. The heat conducting bracket has a heat dissipating portion and a fixing base extending outward from the lower end of the heat dissipating portion. The top end of the heat dissipating portion is provided with a bearing portion for arranging a light emitting diode die. The first conductive bracket and the second conductive bracket are respectively disposed on two sides of the heat conducting bracket, wherein the first conductive bracket has a first connecting portion and a first fixing portion extending outward from a lower end of the first connecting portion. The second conductive support has a second connecting portion and a second fixing portion extending outward from the lower end of the second connecting portion. The first conductive bracket and the second conductive bracket are opposite in electrical polarity and the first connecting portion The second connecting portion is electrically connected to the light emitting diode die. The encapsulant covers the heat dissipating portion, the LED die, the first connecting portion and the second connecting portion to expose the fixing base, the first fixing portion and the second fixing portion, wherein The fixing base, the first fixing portion and the second fixing portion are attached to the plane such that the high-power light-emitting diode can be disposed on the plane.

According to an embodiment of the invention, the material of the heat conducting bracket is a copper alloy having a thickness of 0.5 mm or more. Since the first fixing portion and the second fixing portion and the fixing base are exposed outside the encapsulant, the surface of the heat dissipating base can be joined by surface adhesion technology.

In accordance with another embodiment of the present invention, the encapsulant material is selected from the group consisting of epoxy, methyl rubber, methyl resin, benzene ring rubber, benzene ring resin, organic denatured silicone, and combinations thereof.

In summary, the high-power light-emitting diode system fixes the die on the heat-conducting bracket, and electrically connects the heat-dissipating bracket to the heat-dissipating base by using the two heat-conducting brackets to electrically connect the heat-dissipating base. The structure improves the heat dissipation effect. In addition, the encapsulant used in the high-power LED is a bullet-type package, which can directly package the internal components of the high-power LED, and the encapsulant can be used as an optical lens at the same time, so that the lens can be omitted. Steps to reduce process complexity and reduce costs.

Please refer to FIG. 1 , which is a perspective view of a high power LED package according to an embodiment of the invention. In this embodiment, the high power light emitting diode 100 is packaged in a bullet-type package. In FIG. 1 , the high-power light-emitting diode 100 is disposed on a plane, and mainly includes a light-emitting die 102 , a heat-conducting bracket 104 , a first conductive bracket 106 , a second conductive bracket 108 , and an encapsulant 110 . The heat conducting bracket 104 includes a carrying portion 112, a heat dissipating portion 114, and a fixing base 116 extending outward from a lower end of the heat dissipating portion 114. The material of the heat conducting bracket is a copper alloy with a thickness of 0.5 mm or more. The carrying portion 112 is disposed in a recess of the upper surface of the heat conducting bracket 104, and the light emitting die 102 is fixed in the carrying portion 112 by using a metal glue or in a eutectic manner. Accordingly, referring to FIG. 2, the heat dissipating surface of the illuminating crystal grain 102 can be enlarged by the heat conducting bracket 104. The fixed base 116 of the heat-conducting bracket 104 can be joined to the surface of the heat-dissipating base 200 by a surface mount technology (SMT), which can be a printed circuit board or a metal core printed circuit board (Metal Core) Printed Circuit Board (MCPCB) or heat sink block, etc., it should be noted that the size of the heat sink base 200 in FIG. 2 is only an example. In other embodiments, the size is not limited thereto.

The first conductive bracket 106 is disposed on one side of the heat conducting bracket 104, and mainly includes a first connecting portion 107a and a first fixing portion 107b extending outward from a lower end of the first connecting portion 107a. The first connecting portion 107a is perpendicular to the first fixing portion 107b, and the first connecting portion 107a is electrically connected to the light emitting die 102. The second conductive bracket 108 is disposed on the other side of the heat conducting bracket 104 relative to the first conductive bracket 106 , and the second conductive bracket 108 is opposite in polarity to the first conductive bracket 106 . Similarly, the second conductive support 108 also includes a second connecting portion 109a and a second fixing portion 109b extending outward from the lower end of the second connecting portion 109a, and the second connecting portion 109a and the second fixing portion 109b are perpendicular to each other. And electrically connected to the surface of the light-emitting die 102 and the heat dissipation base 200, respectively. The thickness of the first conductive support 106 and the second conductive support 108 is 0.5 mm or more.

The encapsulating body 110 covers the carrying portion 112 of the heat conducting bracket 104, the heat dissipating portion 114, the first connecting portion 107a of the first conductive bracket 106, and the second connecting portion 109a of the second conductive bracket 108, so that the fixing base 116 is fixed. The first fixing portion 107b and the second fixing portion 109b of the second conductive bracket 108 are exposed outside the encapsulant 110, and the first fixing portion 107b, the second fixing portion 109b, and the fixed base 116 are used in the SMT manner. Engaged with the surface of the heat sink base 200. The material of the encapsulant 110 is selected from the group consisting of epoxy resin, methyl rubber, methyl resin, benzene ring rubber, benzene ring resin, organic denatured silicone, and combinations thereof.

Since the high-power light-emitting diode has a heat-dissipating bracket with an increased heat-dissipating area, the heat-dissipating efficiency can be improved by fixing the die to the heat-conducting bracket, so that the heat-dissipating area is no longer limited to the contact between the conductive bracket and the heat-dissipating base. surface.

In addition, compared with the conventional perforated packaging method, the high-power light-emitting diode can be combined with the heat-dissipating base by means of SMT, which simplifies the process, and can effectively reduce the cost. Can enhance the heat dissipation mechanism.

Although the present invention has been disclosed in an embodiment of the present invention, it is not intended to limit the present invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached.

100. . . High power light emitting diode

102. . . Luminous crystal

104. . . Thermal support

106. . . First conductive bracket

107a. . . First link

107b. . . First fixed part

108. . . Second conductive bracket

109a. . . Second joint

109b. . . Second fixed part

110. . . Encapsulant

112. . . Carrying part

114. . . Heat sink

116. . . Fixed base

200. . . Cooling base

The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood.

1 is a perspective view of a high power light emitting diode according to an embodiment of the invention;

2 is a perspective view of a high power light emitting diode having a heat sink base according to another embodiment of the present invention.

100. . . High power light emitting diode

102. . . Luminous crystal

104. . . Thermal support

106. . . First conductive bracket

107a. . . First link

107b. . . First fixed part

108. . . Second conductive bracket

109a. . . Second joint

109b. . . Second fixed part

110. . . Encapsulant

112. . . Carrying part

114. . . Heat sink

116. . . Fixed base

200. . . Cooling base

Claims (10)

A high-power light-emitting diode is disposed on a plane, and the light-emitting diode comprises: a heat-conducting bracket having an L-shape, having a heat-dissipating portion and being fixed by one of the first direction extending from the lower end of the heat-dissipating portion a susceptor is disposed at a top end of the heat dissipating portion; a light emitting diode die is disposed on the carrying portion; a first conductive bracket and a second conductive bracket are respectively disposed on opposite sides of the heat conducting bracket The first conductive support has a first connecting portion and a first fixing portion, the second conductive bracket has a second connecting portion and a second fixing portion, and the first fixing portion is formed by the lower end of the first connecting portion Extending in a second direction outwardly, the second fixing portion extends from the lower end of the second connecting portion to the second direction, and the top end of the heat dissipating portion, the top end of the first connecting portion and the second connecting portion The top end of the first conductive support and the second conductive support are electrically opposite, and the first connecting portion and the second connecting portion are electrically connected to the light emitting diode die, wherein the second The direction is opposite to the first direction; And the encapsulating colloid, covering the heat dissipating portion, the light emitting diode die, the first connecting portion and the second connecting portion to expose the fixing base, the first fixing portion and the second fixing portion, The fixing base, the first fixing portion and the second fixing portion are attached to the plane, and the fixing base, the first fixing portion and the second fixing portion are connected in a triangle shape with the plane attaching portion. The high power light emitting diode can be made to stand on the plane. The high-power light-emitting diode according to claim 1, wherein the material of the heat-conducting bracket is a copper alloy. The high power light emitting diode according to claim 1, wherein the heat conducting bracket has a thickness of 0.5 mm or more. The high-power light-emitting diode according to claim 1, wherein the first conductive support and the second conductive support have a thickness of 0.5 mm or more. The high-power light-emitting diode according to claim 1, wherein the material of the encapsulant is selected from the group consisting of epoxy resin, methyl rubber, methyl resin, benzene ring rubber, benzene ring resin, Organic denatured silicone and combinations thereof. A high-power light-emitting diode device comprising: a heat-dissipating base; a heat-conducting bracket having an L-shape, having a heat dissipating portion and a fixing base extending from a lower end of the heat dissipating portion to a first direction, the heat dissipating a top portion of the portion is disposed on the opposite side of the heat conducting bracket, wherein the first conductive bracket and the second conductive bracket are respectively disposed on opposite sides of the heat conducting bracket, wherein the first portion is disposed on the opposite side of the heat conducting bracket The conductive bracket has a first connecting portion and a first fixing portion, and the second conductive bracket has a second connecting portion and a second fixing portion extending from a lower end of the first connecting portion to a second direction, wherein the second fixing portion extends from the lower end of the second connecting portion to the second direction outward, and the second fixing portion extends a top end of the heat dissipating portion, a top end of the first connecting portion and a top end of the second connecting portion are connected in a line, the first conductive bracket and the second conductive bracket are electrically opposite and the first connecting portion is connected to the second connecting portion The portion is electrically connected to the light emitting diode die, wherein the second direction is opposite to the first direction; and an encapsulant covering the heat dissipating portion, the light emitting diode die, and the first connecting portion And the second connecting portion exposing the fixing base, the first fixing portion and the second fixing portion, wherein the fixing base, the first fixing portion and the second fixing portion are respectively attached and connected The fixing base, the first fixing portion and the second fixing portion are connected in a triangular shape with the plane attaching portion, so that the high-power light-emitting diode can stand on the heat-dissipating base. The high power light emitting diode according to claim 6, wherein the material of the heat conducting bracket is a copper alloy. The high-power light-emitting diode according to claim 6, wherein the heat-conductive bracket has a thickness of 0.5 mm or more. The high-power light-emitting diode according to claim 6, wherein the first conductive support and the second conductive support have a thickness of 0.5 mm or more. The high-power light-emitting diode according to claim 6, wherein the material of the encapsulant is selected from the group consisting of epoxy resin, methyl rubber, methyl resin, benzene ring rubber, benzene ring resin, Organic denatured silicone and combinations thereof.