TWI485887B - Method for manufacturing light emitting diode - Google Patents

Method for manufacturing light emitting diode Download PDF

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Publication number
TWI485887B
TWI485887B TW101110827A TW101110827A TWI485887B TW I485887 B TWI485887 B TW I485887B TW 101110827 A TW101110827 A TW 101110827A TW 101110827 A TW101110827 A TW 101110827A TW I485887 B TWI485887 B TW I485887B
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Taiwan
Prior art keywords
mold
electrode structure
electrode
cavity
light
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TW101110827A
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Chinese (zh)
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TW201340408A (en
Inventor
Hou Te Lin
Chao Hsiung Chang
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Advanced Optoelectronic Tech
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Publication of TWI485887B publication Critical patent/TWI485887B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Led Device Packages (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

發光二極體封裝方法 Light emitting diode packaging method

本發明涉及一種半導體封裝方法,尤其涉及一種發光二極體封裝方法。 The present invention relates to a semiconductor packaging method, and more particularly to a light emitting diode packaging method.

發光二極體(Light Emitting Diode,LED)係一種可將電流轉換成特定波長範圍的光的半導體元件,憑藉其發光效率高、體積小、重量輕、環保等優點,已被廣泛地應用到當前的各個領域當中。發光二極體在應用到上述各領域中之前,需要將發光二極體晶片進行封裝,以保護發光二極體晶片。 Light Emitting Diode (LED) is a semiconductor component that converts current into light of a specific wavelength range. It has been widely used in current applications due to its high luminous efficiency, small size, light weight, and environmental protection. Among the various fields. Before applying the light-emitting diode to the above various fields, it is necessary to package the light-emitting diode wafer to protect the light-emitting diode wafer.

業界採用注塑成型的方式進行封裝時,填充在模具中的塑膠需要在180度至200度的溫度環境下持續120秒至180秒的時間方能完全固化,由於塑膠在模具中的成型時間較長,導致模具的使用效率不高。故,封裝效率需進一步改進。 When the industry uses injection molding to package, the plastic filled in the mold needs to be fully cured in a temperature range of 180 to 200 degrees for 120 seconds to 180 seconds, due to the long molding time of the plastic in the mold. , resulting in the use of mold is not efficient. Therefore, the packaging efficiency needs to be further improved.

本發明旨在提供一種封裝過程高效的發光二極體封裝方法。 The present invention aims to provide an efficient light emitting diode packaging method for a packaging process.

一種發光二極體封裝方法,包括以下步驟:提供一電極結構,其包括相互間隔的第一電極和第二電極;提供模具,使模具與該電極結構間形成一腔體;向該腔體內注塑流體材料並預固化該流體材料,所述預固化的溫 度環境為180度至200度,所述預固化的時間範圍為60秒至90秒;移除模具;轉移具有預固化流體材料的電極結構至烤爐內並完全固化;在該電極結構上設置發光元件,該發光元件與該兩電極電性連接;及將一封裝層覆蓋形成於該發光元件上。 A light emitting diode packaging method comprising the steps of: providing an electrode structure comprising first and second electrodes spaced apart from each other; providing a mold to form a cavity between the mold and the electrode structure; and injecting into the cavity Fluid material and pre-curing the fluid material, the pre-cured temperature a degree of environment of 180 degrees to 200 degrees, the pre-curing time range of 60 seconds to 90 seconds; removing the mold; transferring the electrode structure with the pre-cured fluid material into the oven and fully curing; setting on the electrode structure a light-emitting element, the light-emitting element is electrically connected to the two electrodes; and an encapsulation layer is formed on the light-emitting element.

與先前技術相比,基於上述封裝方法形成封裝結構,在流體材料預固化階段即移除模具投入下一輪注塑,同時轉移該預成型結構進而高溫完全固化成型,模具的使用時間遠遠小於傳統封裝模具的使用時間,可大大降低作業等待時間,提升模具的使用效率,使得封裝過程更加高效,有利於大量生產。 Compared with the prior art, the package structure is formed based on the above packaging method, and the mold is removed in the fluid material pre-curing stage, and the mold is transferred to the next round of injection molding, and the preform structure is transferred and then solidified at a high temperature. The mold usage time is much smaller than that of the conventional package. The use time of the mold can greatly reduce the waiting time of the work, improve the use efficiency of the mold, make the packaging process more efficient, and facilitate mass production.

下面參照附圖,結合具體實施例對本發明作進一步的描述。 The invention will now be further described with reference to the specific embodiments thereof with reference to the accompanying drawings.

100‧‧‧發光二極體 100‧‧‧Lighting diode

10‧‧‧電極結構 10‧‧‧Electrode structure

11‧‧‧第一電極 11‧‧‧First electrode

12‧‧‧第二電極 12‧‧‧Second electrode

13‧‧‧間隙 13‧‧‧ gap

14‧‧‧上表面 14‧‧‧ upper surface

15‧‧‧下表面 15‧‧‧ Lower surface

20‧‧‧模具 20‧‧‧Mold

21‧‧‧底模 21‧‧‧Bottom mode

22‧‧‧頂模 22‧‧‧Top mold

221‧‧‧頂板 221‧‧‧ top board

222‧‧‧抵擋部 222‧‧‧Resistance Department

223‧‧‧定位部 223‧‧‧ Positioning Department

30‧‧‧腔體 30‧‧‧ cavity

31‧‧‧流道 31‧‧‧ flow path

40‧‧‧流體材料 40‧‧‧ Fluid materials

50‧‧‧反射杯 50‧‧‧Reflection Cup

61‧‧‧基板 61‧‧‧Substrate

62‧‧‧發光元件 62‧‧‧Lighting elements

63‧‧‧封裝層 63‧‧‧Encapsulation layer

圖1至圖7為本發明一實施例的發光二極體封裝方法的各步驟示意圖。 FIG. 1 to FIG. 7 are schematic diagrams showing steps of a method for packaging a light-emitting diode according to an embodiment of the invention.

以下將結合附圖對本發明的發光二極體100封裝方法作進一步的詳細說明。 The method of encapsulating the LED assembly 100 of the present invention will be further described in detail below with reference to the accompanying drawings.

第一步驟:首先請參見圖1,提供一電極結構10,其包括第一電極11和第二電極12,所述第一電極11和第二電極12相互間隔形成一間隙13,每一電極11、12包括一上表面14和與該上表面14相對的下表面15。 First Step: Referring first to FIG. 1, an electrode structure 10 is provided, which includes a first electrode 11 and a second electrode 12. The first electrode 11 and the second electrode 12 are spaced apart from each other to form a gap 13, and each electrode 11 12 includes an upper surface 14 and a lower surface 15 opposite the upper surface 14.

第二步驟:請參見圖2,提供一模具20,其包括一底模21和一頂模22。該底模21頂部為一平整表面,其用於抵合所述電極結構10的下表面以承載所述電極結構10。所述頂模22抵合所述電極結構10的上表面並與電極結構10的上表面共同形成一腔體30,其用於後續注塑形成反射杯50。 Second Step: Referring to Figure 2, a mold 20 is provided that includes a bottom mold 21 and a top mold 22. The top of the bottom mold 21 is a flat surface for abutting the lower surface of the electrode structure 10 to carry the electrode structure 10. The top mold 22 abuts the upper surface of the electrode structure 10 and forms a cavity 30 with the upper surface of the electrode structure 10 for subsequent injection molding to form the reflective cup 50.

該頂模22包括一頂板221、自該頂板221周緣朝該底模21方向凸伸的抵擋部222及自該頂板221中心朝該底模21方向凸伸的定位部223。具體的,所述頂板221的外表面為一光滑的平面。所述抵擋部222在頂板221周緣圍成一環形側壁,其與該頂板221一體成型並自該頂板221下表面邊緣向該底模21方向凸伸,所述抵擋部222中部開設穿孔形成流道31,用以後續注塑流體材料40,本實施例中,所述流道31的數量為2個。所述定位部223自該頂板221下表面中部朝該底模21方向延伸,其與該抵擋部222相互間隔,所述定位部223週邊尺寸自頂板221朝該底模21方向逐漸減小,所述定位部223的下表面與該抵擋部222的下表面齊平。 The top mold 22 includes a top plate 221, a resisting portion 222 protruding from the periphery of the top plate 221 toward the bottom mold 21, and a positioning portion 223 protruding from the center of the top plate 221 toward the bottom mold 21. Specifically, the outer surface of the top plate 221 is a smooth plane. The abutting portion 222 defines an annular side wall at the periphery of the top plate 221, and is integrally formed with the top plate 221 and protrudes from the lower surface edge of the top plate 221 toward the bottom mold 21. The middle portion of the resisting portion 222 is perforated to form a flow path. 31, for the subsequent injection of the fluid material 40, in the embodiment, the number of the flow channels 31 is two. The positioning portion 223 extends from the middle of the lower surface of the top plate 221 toward the bottom mold 21, and is spaced apart from the resisting portion 222. The peripheral dimension of the positioning portion 223 gradually decreases from the top plate 221 toward the bottom mold 21, The lower surface of the positioning portion 223 is flush with the lower surface of the resisting portion 222.

第三步驟:請參閱圖3,將底模21和頂模22設置於該電極結構10之間,即所述底模21的頂部貼合於該電極結構10的下表面,該頂模22的定位部223貼合於該電極結構10的上表面並覆蓋所述間隙13,所述抵擋部222圍設該定位部223並貼合於該電極結構10的上表面,即所述定位部223、抵擋部222及電極結構10圍設形成一環形腔體30,用以後續填充塑膠流體材料40,該流體材料40填滿該腔體後固化形成反射杯50結構。 The third step is as follows: Referring to FIG. 3, the bottom mold 21 and the top mold 22 are disposed between the electrode structures 10, that is, the top of the bottom mold 21 is attached to the lower surface of the electrode structure 10, and the top mold 22 is The positioning portion 223 is attached to the upper surface of the electrode structure 10 and covers the gap 13 . The blocking portion 222 surrounds the positioning portion 223 and is attached to the upper surface of the electrode structure 10 , that is, the positioning portion 223 . The resisting portion 222 and the electrode structure 10 enclose an annular cavity 30 for subsequently filling the plastic fluid material 40. The fluid material 40 fills the cavity and solidifies to form the reflective cup 50 structure.

第四步驟:請參閱圖4,沿流道31向該腔體30內注入流體材料40,同時,流體材料可流經電極結構10的上表面注入第一電極11和 第二電極12之間的間隙13中,位於該腔體30內的流體材料40後續形成反射杯50結構,位於該間隙13中的流體材料40後續形成基板61。該流體材料40可為環氧樹脂、矽樹脂或其他高分子材料。當該流體材料40填滿該腔體30及間隙13後對流體材料40進行高溫預固化,具體的,將該模具20的溫度控制在180度至200度的範圍內,此時流體材料40的溫度維持在160度至180度的範圍內,在該溫度環境下持續60秒至90秒以預固化形成反射杯50結構及基板61。 Fourth step: Referring to FIG. 4, the fluid material 40 is injected into the cavity 30 along the flow channel 31, while the fluid material can flow through the upper surface of the electrode structure 10 to inject the first electrode 11 and In the gap 13 between the second electrodes 12, the fluid material 40 located in the cavity 30 subsequently forms a reflective cup 50 structure, and the fluid material 40 located in the gap 13 subsequently forms the substrate 61. The fluid material 40 can be an epoxy resin, a resin or other polymeric material. When the fluid material 40 fills the cavity 30 and the gap 13 , the fluid material 40 is pre-cured at a high temperature. Specifically, the temperature of the mold 20 is controlled within a range of 180 degrees to 200 degrees, at which time the fluid material 40 The temperature is maintained in the range of 160 to 180 degrees, and the temperature is maintained for 60 seconds to 90 seconds to pre-cure to form the reflector cup 50 structure and the substrate 61.

移除模具20投入下一發光二極體100的注塑封裝,此時該反射杯50及基板61僅有外部結構基本固化成型,即該反射杯50及基板61尚未完全固化。 The mold 20 is removed from the injection molding package of the next LED assembly 100. At this time, the reflector cup 50 and the substrate 61 are substantially solidified only by the external structure, that is, the reflector cup 50 and the substrate 61 are not completely cured.

第五步驟:請參閱圖5,將預成型的發光二極體100封裝結構轉移至一烤箱(圖未示)之中,將溫度控制在160度至180度的範圍內,烘烤該預成型的發光二極體100封裝結構至該反射杯50結構及基板61完全固化。 The fifth step: Referring to FIG. 5, the preformed LED assembly 100 is transferred into an oven (not shown), and the temperature is controlled in the range of 160 to 180 degrees, and the preform is baked. The light emitting diode 100 package structure is completely cured to the reflective cup 50 structure and the substrate 61.

第六步驟:請參閱圖6,在該電極結構10上設置一發光元件62。具體的,先去除第一電極11和第二電極12表面的殘留毛邊,以保證該電極結構10表面的導電性。然後,在該第一電極11的、靠近該第二電極12一端的表面上設置一發光元件62。該發光元件62與該第一電極11形成電性連接,並藉由導線電連接至該第二電極12,也即該發光元件62的兩個電極分別與第一電極11和第二電極12形成電性連接。本實施例中該發光元件62為發光二極體晶粒。在本步驟中,也可將發光元件62以晶片倒裝的形式固定在電極結構10上,並借由導電的固晶膠使發光元件的兩個電極分別與第一電極11、第二電極12形成電性連接。 Sixth step: Referring to FIG. 6, a light-emitting element 62 is disposed on the electrode structure 10. Specifically, the residual burrs on the surfaces of the first electrode 11 and the second electrode 12 are removed first to ensure the conductivity of the surface of the electrode structure 10. Then, a light-emitting element 62 is disposed on a surface of the first electrode 11 adjacent to one end of the second electrode 12. The light-emitting element 62 is electrically connected to the first electrode 11 and electrically connected to the second electrode 12 by a wire, that is, the two electrodes of the light-emitting element 62 are respectively formed with the first electrode 11 and the second electrode 12 Electrical connection. In the embodiment, the light-emitting element 62 is a light-emitting diode die. In this step, the light-emitting element 62 can also be fixed on the electrode structure 10 in the form of wafer flip-chip, and the two electrodes of the light-emitting element are respectively connected to the first electrode 11 and the second electrode 12 by conductive solid glue. Form an electrical connection.

第七步驟:請參閱圖7,將一封裝層63覆蓋於該發光元件62上,該封裝層63填充所述反射杯50並與所述反射杯50的上表面相持平。封裝層63由透明材料製成,其可以由矽樹脂或其他樹脂,或者其他混合材料製作而成。該封裝層63還可根據發光元件62與發光需要包含有螢光粉。該螢光粉包含石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉、氮氧化物基螢光粉和氮化物基螢光粉中的一種或多種。 The seventh step: Referring to FIG. 7, an encapsulation layer 63 is overlaid on the light-emitting element 62. The encapsulation layer 63 fills the reflective cup 50 and is flush with the upper surface of the reflective cup 50. The encapsulation layer 63 is made of a transparent material, which may be made of tantalum resin or other resin, or other mixed materials. The encapsulation layer 63 may further contain phosphor powder according to the light-emitting element 62 and the light-emitting requirements. The phosphor powder comprises garnet-based phosphor powder, citrate-based phosphor powder, orthosilicate-based phosphor powder, sulfide-based phosphor powder, thiogallate-based phosphor powder, and oxynitride group. One or more of phosphor powder and nitride-based phosphor powder.

與先前技術相比,基於上述封裝方法形成發光二極體100封裝結構,在流體材料40預固化階段即移除模具20投入下一發光二極體100注塑,同時轉移該預成型結構進而高溫完全固化形成反射杯50結構,模具20的使用時間遠遠小於傳統封裝模具20的使用時間,可大大降低作業等待時間,提升模具20的使用效率,使得封裝過程更加高效,有利於大量生產。 Compared with the prior art, the light emitting diode 100 package structure is formed based on the above packaging method, and the mold 20 is removed in the pre-curing stage of the fluid material 40, and the next light-emitting diode 100 is injected, and the preformed structure is transferred and the high temperature is completely completed. The curing forms the structure of the reflective cup 50. The use time of the mold 20 is far less than the use time of the conventional packaging mold 20, the work waiting time can be greatly reduced, the use efficiency of the mold 20 is improved, the packaging process is more efficient, and mass production is facilitated.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限製本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

11‧‧‧第一電極 11‧‧‧First electrode

12‧‧‧第二電極 12‧‧‧Second electrode

50‧‧‧反射杯 50‧‧‧Reflection Cup

61‧‧‧基板 61‧‧‧Substrate

62‧‧‧發光元件 62‧‧‧Lighting elements

63‧‧‧封裝層 63‧‧‧Encapsulation layer

Claims (7)

一種發光二極體封裝方法,包括以下步驟:提供一電極結構,其包括相互間隔的第一電極和第二電極.提供模具,使模具與該電極結構間形成一腔體;向該腔體內注塑流體材料並預固化該流體材料,所述預固化的溫度環境為180度至200度,所述預固化的時間範圍為60秒至90秒;移除模具;轉移具有預固化流體材料的電極結構至烤爐內並完全固化;在該電極結構上設置發光元件,該發光元件與該兩電極電性連接;及將一封裝層覆蓋形成於該發光元件上。 A light emitting diode packaging method comprising the steps of: providing an electrode structure comprising first and second electrodes spaced apart from each other. providing a mold to form a cavity between the mold and the electrode structure; and injecting into the cavity Fluid material and pre-curing the fluid material, the pre-cured temperature environment is 180 degrees to 200 degrees, the pre-curing time ranges from 60 seconds to 90 seconds; removing the mold; transferring the electrode structure with the pre-cured fluid material Into the oven and fully cured; a light-emitting element is disposed on the electrode structure, the light-emitting element is electrically connected to the two electrodes; and an encapsulation layer is formed on the light-emitting element. 如申請專利範圍第1項所述之發光二極體封裝方法,其中,所述第一電極和第二電極間隔一間隙,所述間隙與腔體經由電極結構的上表面連通,腔體內的流體材料固化形成反射杯結構,間隙中的流體材料固化形成基板。 The method of claim 2, wherein the first electrode and the second electrode are separated by a gap, and the gap communicates with the cavity via the upper surface of the electrode structure, and the fluid in the cavity The material solidifies to form a reflective cup structure, and the fluid material in the gap solidifies to form a substrate. 如申請專利範圍第1項所述之發光二極體封裝方法,其中,所述模具包括一底模和一頂模,所述底模頂部貼合電極結構的下表面,所述頂模與該電極結構的上表面形成該腔體。 The method of claim 2, wherein the mold comprises a bottom mold and a top mold, the top of the bottom mold is attached to a lower surface of the electrode structure, and the top mold and the top mold The upper surface of the electrode structure forms the cavity. 如申請專利範圍第3項所述之發光二極體封裝方法,其中,所述頂模包括一頂板、自該頂板周緣朝該底模方向凸伸的抵擋部及自該頂板中心朝該底模方向凸伸的定位部,所述定位部、抵擋部及電極結構共同圍設形成該腔體。 The method of claim 3, wherein the top mold comprises a top plate, a resisting portion protruding from the peripheral edge of the top plate toward the bottom mold, and the bottom mold from the center of the top plate A positioning portion protruding in a direction, the positioning portion, the resisting portion and the electrode structure are collectively formed to form the cavity. 如申請專利範圍第4項所述之發光二極體封裝方法,其中,所述抵擋部為一環形側壁,該抵擋部中部開設穿孔形成流道。 The method of claim 4, wherein the resisting portion is an annular side wall, and the middle portion of the resisting portion is formed with a through hole to form a flow channel. 如申請專利範圍第4項所述之發光二極體封裝方法,其中,所述定位部與該抵擋部相互間隔,所述定位部的下表面與該抵擋部的下表面齊平。 The method of claim 2, wherein the positioning portion and the resisting portion are spaced apart from each other, and a lower surface of the positioning portion is flush with a lower surface of the resisting portion. 如申請專利範圍第6項所述之發光二極體封裝方法,其中,所述定位部週邊尺寸自頂板朝該底模方向逐漸減小。 The method of claim 6, wherein the peripheral dimension of the positioning portion gradually decreases from the top plate toward the bottom mold.
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