TWI484527B - - Google Patents

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Publication number
TWI484527B
TWI484527B TW101151245A TW101151245A TWI484527B TW I484527 B TWI484527 B TW I484527B TW 101151245 A TW101151245 A TW 101151245A TW 101151245 A TW101151245 A TW 101151245A TW I484527 B TWI484527 B TW I484527B
Authority
TW
Taiwan
Application number
TW101151245A
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Chinese (zh)
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TW201349280A (zh
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Publication of TW201349280A publication Critical patent/TW201349280A/zh
Application granted granted Critical
Publication of TWI484527B publication Critical patent/TWI484527B/zh

Links

TW101151245A 2012-05-31 2012-12-28 自動頻率調諧源和偏置射頻電源的電感耦合等離子處理室 TW201349280A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210175897.2A CN103456591B (zh) 2012-05-31 2012-05-31 自动频率调谐源和偏置射频电源的电感耦合等离子处理室

Publications (2)

Publication Number Publication Date
TW201349280A TW201349280A (zh) 2013-12-01
TWI484527B true TWI484527B (enrdf_load_stackoverflow) 2015-05-11

Family

ID=49738844

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101151245A TW201349280A (zh) 2012-05-31 2012-12-28 自動頻率調諧源和偏置射頻電源的電感耦合等離子處理室

Country Status (2)

Country Link
CN (1) CN103456591B (enrdf_load_stackoverflow)
TW (1) TW201349280A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667487B (zh) * 2016-09-29 2019-08-01 美商超精細研究股份有限公司 射頻線圈調諧方法及裝置

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TWI647735B (zh) * 2013-03-15 2019-01-11 美商蘭姆研究公司 使用模型化以建立與電漿系統相關的離子能量
CN106298418B (zh) * 2015-05-18 2018-10-16 中微半导体设备(上海)有限公司 电感耦合等离子体处理系统及处理方法
CN106298419B (zh) * 2015-05-18 2018-10-16 中微半导体设备(上海)有限公司 电感耦合等离子体处理系统及处理方法
CN104849598B (zh) * 2015-05-25 2018-04-10 上海美诺福科技股份有限公司 一种射频发生器的控制电路与检测系统
US10347464B2 (en) * 2015-09-15 2019-07-09 Lam Research Corporation Cycle-averaged frequency tuning for low power voltage mode operation
CN110416047B (zh) 2018-04-27 2021-03-02 北京北方华创微电子装备有限公司 射频阻抗匹配的方法及装置、半导体处理设备
US11355325B2 (en) 2020-05-28 2022-06-07 Applied Materials, Inc. Methods and systems for monitoring input power for process control in semiconductor process systems
CN113065237B (zh) * 2021-03-19 2022-11-08 四川英杰电气股份有限公司 一种自动设置调频边界的方法和射频电源
CN114446758B (zh) * 2022-01-21 2024-04-12 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺方法
CN114724945A (zh) * 2022-05-18 2022-07-08 北京屹唐半导体科技股份有限公司 等离子体氮化掺杂方法和装置及半导体器件

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US20030192646A1 (en) * 2002-04-12 2003-10-16 Applied Materials, Inc. Plasma processing chamber having magnetic assembly and method
TW200829087A (en) * 2006-11-22 2008-07-01 Pearl Kogyo Co Ltd High frequency power source device and supply method of high frequency power
TW200903625A (en) * 2007-07-04 2009-01-16 Advanced Micro Fab Equip Inc Multi-station decoupled reactive ion etch chamber
US20100089319A1 (en) * 2008-10-09 2010-04-15 Applied Materials, Inc. Rf return path for large plasma processing chamber
TW201108866A (en) * 2009-08-17 2011-03-01 Advanced Micro Fab Equip Inc Plasma processing chamber having switchable bias frequency and a switchable match network therefore
US20110135844A1 (en) * 2009-11-17 2011-06-09 Applied Materials, Inc. Large area plasma processing chamber with at-electrode rf matching
CN201962350U (zh) * 2010-11-09 2011-09-07 中微半导体设备(上海)有限公司 一种原位清洁第iii族元素和第v族元素化合物沉积反应腔的装置

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KR0170387B1 (ko) * 1989-10-03 1999-03-30 제임스 조셉 드롱 고주파 반도체 웨이퍼 가공장치 및 방법
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
TW200300649A (en) * 2001-11-27 2003-06-01 Alps Electric Co Ltd Plasma processing apparatus, its driving method, matching circuit design system, and plasma processing method
KR20060029621A (ko) * 2003-06-19 2006-04-06 플라즈마 컨트롤 시스템 엘엘씨 듀티 싸이클이 조절가능한 플라즈마 생성 장치 및 방법과고주파 구동 회로

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030192646A1 (en) * 2002-04-12 2003-10-16 Applied Materials, Inc. Plasma processing chamber having magnetic assembly and method
TW200829087A (en) * 2006-11-22 2008-07-01 Pearl Kogyo Co Ltd High frequency power source device and supply method of high frequency power
TW200903625A (en) * 2007-07-04 2009-01-16 Advanced Micro Fab Equip Inc Multi-station decoupled reactive ion etch chamber
US20100089319A1 (en) * 2008-10-09 2010-04-15 Applied Materials, Inc. Rf return path for large plasma processing chamber
TW201108866A (en) * 2009-08-17 2011-03-01 Advanced Micro Fab Equip Inc Plasma processing chamber having switchable bias frequency and a switchable match network therefore
US20110135844A1 (en) * 2009-11-17 2011-06-09 Applied Materials, Inc. Large area plasma processing chamber with at-electrode rf matching
CN201962350U (zh) * 2010-11-09 2011-09-07 中微半导体设备(上海)有限公司 一种原位清洁第iii族元素和第v族元素化合物沉积反应腔的装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667487B (zh) * 2016-09-29 2019-08-01 美商超精細研究股份有限公司 射頻線圈調諧方法及裝置
TWI685668B (zh) * 2016-09-29 2020-02-21 美商超精細研究股份有限公司 磁共振成像系統，以及搭配該磁共振成像系統使用之調諧系統

Also Published As

Publication number Publication date
CN103456591A (zh) 2013-12-18
TW201349280A (zh) 2013-12-01
CN103456591B (zh) 2016-04-06

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