201108866 六、發明說明： 【發明所屬之技術領域】201108866 VI. Description of the invention: [Technical field to which the invention belongs]
本發明涉及應用於等離子體處理腔的射頻功率源（RF power suppliers)和匹配網路（ma1xhing networks)，尤其 涉及此夠實現多重頻率射頻功率（multipie-frequency RF power)的射頻功率源和匹配網路。 【先前技術】 在本領域中，利用雙重或多重射頻頻率的等離子體處理 腔已被熟知。一般地，雙重頻率的等離子體處理腔接收的射 頻偏置功率（RF bias power)具有低於大約15MHz的頻率， 其接收的射頻源功率（即source power)具有更高的頻率， 通常為27〜200MHZ。在本文中，射頻偏置功率（RF bias p〇wer) 指用於控制離子能量及其能量分佈的射頻功率。另一方面， 射頻源功率（RF source p〇wer)指用於控制等離子離子解離 (ion dissociation)或等離子體密度的射頻功率。在一些 • 具體實補中，财運雜刻雜子處理㈣偏置頻率為， 諸如 lOOKHz，2MHz，2.2MHz，13· 56MHz，源頻率為諸如 13.56MHz，27MHz，60MHz，100MHz 或更高。 近日，業内出了在一個偏置頻率和兩個源頻率下運行 等離子體處理腔。例如，提出了在一個施的偏置頻率和兩 個分別為27MHz和60MH的源頻率下運行等離子侧腔。按此 1式’各種離子的解離可以由上述棚源射麵率控制。不 論構造如何，在财技術卜每_转由—_立的賴 功率源提供，每侧讀功麵私於—蝴立_配網路。 201108866 圖1是現有技術的多重頻率等離子體處理腔的 :力：等!_腔包括一個偏置射頻功率和兩麵: 、生斋。更具體地’如圖丨所示的等離子體處理腔⑽ 〇括-個上電極105、下電極110和產生於上述兩電極之 2子體12G。眾所周知，上電_通她於反應腔的頂 2電極1H)通常嵌設于下方的陰極元件上，所述陰極 以^用於放置待處理的半導社藝件，如，半導體晶片。 等^子一個偏置射頻功率源125通過匹配電路140為 腔⑽提供射頻功率。射頻偏置的頻率為& ;=3,(更準確地為13. 5_，其施加於 上圖1也不出了兩個射頻源功率源130和135， 1作鮮分別為f2和f3。比如，f2可設為2聰， 斤述射頻源功率請和歸別通過匹配網路 向等離子體處理腔100提供功率。射頻源功率可以 施加於下電極U〇痞卜雷先7 ^上電極105上。特別地，在本文的所有 :;二，戶，網路的輸出都被示意為-個指向反應腔的 等種不意性的表示，用於涵蓋任何匹配網路和 17¾雷;^人0 ’無論是通過下電極、頂蓋上的電極、或是 1 過電她合線_方式。例如，偏置功率可以通過下方的 ==而源功率可以通過氣體嘴射的-個電極或-個 =感線_合。反之’偏置辨和源功率也可⑽過下方的 陰極搞合。 【發明内容】 發明内容部分僅提供對本發明的一些方面和特徵的基本 201108866 ，解性介紹，而非本發明的整體概括，其並麵別地用於確 定本發明關鍵或主要_理或者限定本發_範圍，其目的 僅用於以簡化形式呈現本發明的一些概念，以作為下文更多 細節描述的前序。 本發明的不同方面提供的轉子體處雜具備一個疊加 於等離子魏鮮上的可切顯置解魏加於陰極。 根據本發明的—個實施方式，—個能夠產生多重射頻偏置頻 率的功率源通過—綱關彳她合於-個匹配網路中。所述匹 配網路將所述偏置解巾的—_合於陰極。另—個匹配網 路施加一個源射頻功率於所述陰極。可變並聯電容器 (wiable shunt eapaeitQr)㈣定電容的-個平行連接 ，設置於地和關的輸人之間，另-個可變並聯電容器和固 定電容的平行連接被連接於地和源射頻匹_路的輸入之 間。固定電容器（fixedcapacit〇r)為其平行連接的可變並 聯電容器提供保護。 根據本發個方面，提供了—種射頻匹配電路，其 能夠將兩俯娜綱其中—麵-觸_可轉換地輕合 於一個陰極。所述電路包括：—個包括-個輸人、-個第一 輪出和一個第二輸出的開關；一個具備搞合於所述開關的第 輸出的输入和搞合於所述陰極的輸出的第一匹配網路，所 述第-匹配網路被調譜以在一個低於_z的第一偏置頻率 I運行；-個錢_合騎關_第二輸㈣輸入和搞合 :所述陰極的輸出的第二匹配網路，所述第二匹配網路被調 驾以在-個高於所述第-偏置頻率但低於·z的第二偏置 201108866The present invention relates to RF power suppliers and matching networks applied to a plasma processing chamber, and more particularly to an RF power source and matching network capable of implementing multi-pie-frequency RF power. road. [Prior Art] Plasma processing chambers utilizing dual or multiple RF frequencies are well known in the art. Generally, the dual frequency plasma processing chamber receives a radio frequency bias power (RF bias power) having a frequency lower than about 15 MHz, and the received radio source power (ie, source power) has a higher frequency, usually 27~ 200MHZ. In this context, RF bias power refers to the RF power used to control the ion energy and its energy distribution. On the other hand, RF source power refers to the RF power used to control plasma ion dissociation or plasma density. In some • specific implementations, the wealth of miscellaneous processing (4) bias frequency is, such as lOOKHz, 2MHz, 2.2MHz, 13.56MHz, the source frequency is such as 13.56MHz, 27MHz, 60MHz, 100MHz or higher. Recently, the industry has operated plasma processing chambers at a bias frequency and two source frequencies. For example, it has been proposed to operate a plasma side cavity at a bias frequency and two source frequencies of 27 MHz and 60 MHz, respectively. According to this formula, the dissociation of various ions can be controlled by the above-mentioned shed source rate. Regardless of the structure, in the financial technology, each _ turn is provided by the power source of the _ 立, each side of the reading surface is private - 立立_配网络. 201108866 Figure 1 is a prior art multi-frequency plasma processing chamber: force: etc. The cavity includes a biased RF power and two sides: More specifically, the plasma processing chamber (10) shown in Fig. 〇 includes an upper electrode 105, a lower electrode 110, and two sub-body 12G which are generated from the above two electrodes. It is well known that the top electrode 1H), which is powered on the reaction chamber, is typically embedded in a lower cathode element that is used to place a semiconductor material to be processed, such as a semiconductor wafer. A bias RF power source 125 is coupled to the cavity (10) to provide RF power through the matching circuit 140. The frequency of the RF offset is &;=3, (more accurately, 13.5_, which is applied to the above Figure 1 and does not produce two RF source power sources 130 and 135, 1 is fresh as f2 and f3, respectively. For example, f2 can be set to 2 Cong, and the RF source power and the source are supplied to the plasma processing chamber 100 through the matching network. The RF source power can be applied to the lower electrode U〇痞Bray first 7^Upper electrode 105. In particular, all of the following: • Second, household, network output is indicated as an unintentional representation of the reaction cavity, covering any matching network and 173⁄4 Ray; ^人0' Either through the lower electrode, the electrode on the top cover, or the 1 over-electrical her-wire method. For example, the bias power can pass through the lower == and the source power can pass through the gas nozzle - or an electrode = Sense line _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ An overall summary of the invention, which is used in parallel to determine the key or primary aspects of the invention The scope of the present invention is intended to be in a simplified form as a pre-sequence of the more detailed description of the invention. The various aspects of the present invention provide a superposition of the rotor body According to an embodiment of the present invention, a power source capable of generating multiple RF offset frequencies is passed through a matching network. The matching network combines the offset defrosting--the cathode. Another matching network applies a source RF power to the cathode. The variable parallel capacitor (wiable shunt eapaeitQr) (four) constant capacitance - Parallel connections, placed between the ground and the input of the input, and a parallel connection of a variable parallel capacitor and a fixed capacitor is connected between the ground and the input of the source RF. The fixed capacitor (fixedcapacit〇r) Providing protection for a variable parallel capacitor connected in parallel. According to the present aspect, there is provided a radio frequency matching circuit capable of converting a two-faced-surface-touch-convertible lightly to a negative The circuit includes: a switch including - an input, a first round, and a second output; an input having an output coupled to the switch and an output coupled to the cathode a first matching network, the first matching network is tuned to run at a first offset frequency I lower than _z; - a money _ _ _ _ second input (four) input and fit: a second matching network of the output of the cathode, the second matching network being tuned to a second offset 201108866 above the first bias frequency but below the z
頻率下運行；以及，一個具備耦合於所述陰極的輸出的第三 匹配網路，所述第三匹配網路被調諧以在一個高於所述第二 偏置頻率的源頻率下運行。所述電路還包括：一個耗合於所 述第三匹配網路的輸出和所述陰極之間的並聯諧振電路 (reS0nance circuit) ’所述並聯諧振電路可以被調諧於使 得其中心頻率與所述第二偏置頻率相同；一個可變並聯電容 器耦合於地和所述開關的輸入之間；一個耦合於地和所述第 二匹配網路的輸入之間的第二可變並聯電容器；一個耦合於 地和所述開關的輸人之間的固定電容器；和/或一個_合於地 和所述第三匹配網路的輸入之間的第二固定電容器。 ☆根據本發明的-個方面，提供了—種射頻匹配電路，其 能夠將兩個紅鮮的其中-個可轉換地輕合於—個陰極。 所述電路包括：-個包括一個輸入、一個第—輸出和一個第 二輸出的開關個具備耗合於所述開關的第—輸出的輸入 和麵合於所述陰極的輸出的第—匹配網路，所述第一匹配網 路被繼以在-健於臟ζ ·—偏置辩下運行丨一個 具備麵合於所述開_第二輸出的輸人㈣合於所述陰極的 輸出的第—匹配網路’所述第二匹配網路被調諧以在一個高 於第-偏置頻率但低於·ζ的第二偏置_下運行；一個 搞合於地和所述_的輸人之_可變並聯電容器；以及一 個轉合於地和所述開關的輸人之間的_電容器。 根據本翻的另―方面，提供了—種運行於兩種可轉換 _偏置功率的等離子體處理腔，包括：—個祕在真空内 至之中產生麵子體的反應腔；__於將射頻能量麵合於 201108866 ί離Z的陰極；一個能夠選擇性地鼓—個低於10驗的 第頻率或—個高於所述第—偏置頻率但低於腿Ζ的 置頻率的第-射頻功率發生器；-個包括合於Operating at a frequency; and a third matching network having an output coupled to the cathode, the third matching network being tuned to operate at a source frequency that is higher than the second bias frequency. The circuit further includes: a parallel resonant circuit (res0) between the output of the third matching network and the cathode. The parallel resonant circuit can be tuned such that its center frequency is The second biasing frequency is the same; a variable shunt capacitor is coupled between ground and the input of the switch; a second variable shunt capacitor coupled between the ground and the input of the second matching network; a coupling a fixed capacitor between the ground and the input of the switch; and/or a second fixed capacitor between the ground and the input of the third matching network. ☆ In accordance with one aspect of the invention, a radio frequency matching circuit is provided that is capable of converting one of two red fresh colors to a cathode. The circuit includes: a switch including an input, a first output, and a second output, a first matching network having an input that is coupled to the first output of the switch and an output that is coupled to the cathode The first matching network is continually operated in a viscous manner, and an input (4) corresponding to the output of the second output is combined with the output of the cathode. a first matching network 'the second matching network is tuned to operate at a second offset _ higher than the first-bias frequency but lower than ζ; one for the ground and the _ a variable parallel capacitor; and a capacitor between the ground and the input of the switch. According to another aspect of the present invention, there is provided a plasma processing chamber operating in two convertible _ bias powers, comprising: a reaction chamber that generates a surface body in a vacuum; The RF energy is integrated at 201108866 ί away from the cathode of Z; one can selectively drum a frequency lower than 10 or a number higher than the first bias frequency but lower than the set frequency of the leg - - RF power generator;
二於屮’㈣率發生器的開關，其包括—個第—輸出和一個第 於戶In—個具絲合於所述開關的第—輪出的輸入和輕合 批以=極的輸出的第—匹配網路，所述第—匹配網路被調 偏置頻率下運行；—個具備轉合於所述開關的第 j出的輸人_合於所述陰極的輸出的第二匹配網路，所 =匹配網路被觸以在第二偏置頻率下運行；一個能夠 。。生鬲於15MHz的頻率的射頻源功率的第二射頻功率發生 益，以及，-個具備g合於所述第二射頻料發生器的輸入 和輕合於所述陰極的輸出的第三匹配網路。在—個實施例 所述第㉟置頻率為大約2腿，所述第二偏置頻率為大 約13MHz ’所述源功率頻率為27馳，_Hz和ι〇_ζ的其 中之。所述電路可進—步地包括—彳_合於所述第三匹配 網路的輸出和所述陰極之_並聯鎌，所述並聯諧振 電路被調諧以使得其中心頻率大約為13MHz，其頻帶寬度 (band)為’。所述電路可進—步地包括—個可變並聯電 谷益和個固疋電容器的輕合於地和所述開關的輸入之間的 平行連接。所述電路可進一步地包括耦合於地和所述第三匹 配網路的所述輸入之間的一個可變並聯電容器和一個固定電 谷益的平行連接。 【實施方式】 圖2示出了根據本發明的一個具體實施例的多重頻率等 201108866 離子體處理腔的結構示賴，所述轉子體處理腔包括兩個 搞合於-她_路的可切換射賴置功率源。在圖2中， 兩個射頻偏置功率源225和255通過開關232給反應腔· 提供可切換的射頻偏置頻率n和f2，所述開關232分別輕合 於匹配電路24G和245。所述射頻偏置頻率f!通常為2MHz或 2.2MHz ’射頻偏置頻率f2通常為13 (更準確地為 13. 56MHz)。_射觀置通常施加於下雜2iq。按此方式，The switch of the second (four) rate generator, which includes - a first output and a first household In - the input of the first round of the switch and the output of the light batch to the output of the pole a first-matching network, the first-matching network is operated at a biased frequency; a second matching network having an output of the j-th output coupled to the switch Road, where = matching network is touched to operate at the second bias frequency; one capable. . Generating a second RF power of RF source power at a frequency of 15 MHz, and a third matching network having an input coupled to the second RF generator and an output coupled to the cathode road. In the embodiment, the 35th set frequency is about 2 legs, and the second bias frequency is about 13 MHz. The source power frequency is 27 Hz, _Hz and ι〇_ζ. The circuit can further include -彳-in conjunction with an output of the third matching network and a parallel 镰 of the cathode, the parallel resonant circuit being tuned such that its center frequency is approximately 13 MHz, the frequency band thereof The width is '. The circuit can further include a parallel connection between the variable parallel shunt and a solid junction capacitor and the input of the switch. The circuit can further include a parallel connection of a variable shunt capacitor coupled between ground and the input of the third matching network and a fixed electrical connection. [Embodiment] FIG. 2 shows a structural representation of a multi-frequency, etc., 201108866 ion processing chamber, which includes two switchable states that are compatible with each other, in accordance with an embodiment of the present invention. Shoot the power source. In Figure 2, two RF bias power sources 225 and 255 provide switchable RF bias frequencies n and f2 to the reaction chamber through switches 232, which are lightly coupled to matching circuits 24G and 245, respectively. The RF offset frequency f! is typically 2 MHz or 2.2 MHz. The RF offset frequency f2 is typically 13 (more accurately 13.56 MHz). The _shooting position is usually applied to the lower impurity 2iq. In this way,
树明實現了—種改㈣離子能量控制。例如，對於需要更 南的轟擊能量應料合，諸如前端蝴（㈣卜㈣打⑻ 的應用’可利用2MHz的源，而對於需要較柔和的轟擊的應用 場合，諸如後端侧（back_endetch)的應用，可利用a· 的偏置。圖2也示出了一個射頻源功率源235，其在頻率f3 下運行，例如’ 2施，6_，l_z f。所述射頻源功率 源235通過匹配網路25〇被傳送到反應腔2〇〇並施加於下電 極210所述源功率用於控㈣等離子體密度，即等離子體離子Shuming realized the change of (four) ion energy control. For example, for a more southerly bombardment energy, a front end butterfly ((4)b (four) hit (8) application can utilize a 2 MHz source, while for applications that require a softer bombardment, such as a backend end (back_endetch) Application, the offset of a· can be utilized. Figure 2 also shows an RF source power source 235 that operates at frequency f3, such as '2, 6_, l_z f. The RF source power source 235 passes through the matching network. The channel 25 is transferred to the reaction chamber 2〇〇 and applied to the lower electrode 210. The source power is used to control the (IV) plasma density, ie, the plasma ion.
園Z所示的結構實現了反應腔雙重頻率（或^3 f2/f3)的應用。例如’ flw4_z到遞心可為删 到簡Hz，但通常低於·ζ;ί3可為簡z到麵I 更面。在-個特例中’fl為簡z，f2為請㈣為嶋 =結構使得運行在工藝中f要在侧顿置功率柄 '員。偏置功率之肋換她方（redpes)變得非常容易。 圖3 π例性地示出了一個匹配電路，其中三個可用頻与 的其中兩個可切換地被施加於—辦離子體處理腔的陰相 201108866The structure shown in Park Z achieves the dual frequency of the reaction chamber (or ^3 f2/f3). For example, ' flw4_z to centroid can be deleted to simple Hz, but usually lower than · ζ; ί3 can be more simple from simple z to face I. In the special case, 'fl is simple z, f2 is please (four) is 嶋 = structure makes the operation in the process f to be placed on the side of the power handle 'member. It is very easy to change the rib of the bias power to the redpes. Figure 3 π exemplarily shows a matching circuit in which two of the three available frequencies are switchably applied to the negative phase of the ion processing chamber.
上。一個高頻f3通過一個匹配電路334和一個並聯諧振電路 33〇輕合於所述陰極，而兩個較低頻率fi和f2與開關332 相連接’所述開關332可切換地使fl或f2通過匹配電路32〇 或322耦合至所述陰極。在本實施例中，所述射頻頻率fl/f2 由-個單_咖辨發生H提供，財現可切換地運行於 頻率fl或f2下。每個所述匹配電路由一串聯連接的一個電 谷态和一個電感組成。在一個實施例中，匹配電路3跗包括 一個200〜500PF的電容器和一個大約為2〇〜5〇mH的電感； 匹配電路322包括-個50〜200pF的電容器和一個大約為〇. 5 〜5祕的電感；匹配電路32〇包括一個九約25pF的電容器和 一個大約0.2-0. 3mH的電感。 所述並聯舰電路330用於防止能量從13· 56MHz功率源 進入6識源。也就是說，當開關微麵合於2MHz偏置源時， 偏置頻率比6GMHz的等離子體_率低三十倍，因此它不倉t 跳過匹配電路334。但是，當所述開關332轉合於13. 56MHbz 偏置功率時’偏较贿料離子體賴率f3，可能跳 過所述匹配電路334。因此，本發供了-種並聯譜振電 路，其由-個電容器和-個電感並聯連接而成。在本實施例 中，當 f 1 = 2ΜΗΖ，f2 = 13. 56MHz，f3 = 6G ΜΗΖ，所述並 聯諧振電路330的中心頻率為13ΜΗζ，其變數或頻帶寬度為么 f = 2ΜΗΖ。這防止了偏置頻率13 56沒漏（1灿时〇)進入源 功率源f3。所述锴振電路是作為_z的-個短路（short circuit)° 305耗合於 如圖1可變並聯電容器 201108866 開關332之前，從而其對於匹配電路32〇和微*言是共同 的（無論匹配電路320和322中的哪一個與開關3犯連接）。 另-個可變並聯電容器315為頻率f3和匹配電路334配合工 作。在本實施例中，兩個並聯電容器利用可變真空電容器 (variable _ capacit⑽）來實施。並且’，在本實施 例中’可誠特定的保翻試以賴上述可變並聯電容器。 一侧定電容11 平抽合于·餘ϋ舰。固定電容 器300保護並聯電容器3〇5以使其在設定為低電容值時不受 商射頻電流影響。反之，固定電容器⑽平他合于可變並 聯電谷器315。固定電容器保護並聯電容器315以使其 在設定為低電容辦不受高射頻電流影響。在本實施例中， 可變並聯電容器305可在大約3〇pF m漏成之間變化，固 定電容器300被設定為大約100PF。類似地，在本實施例中， 可變並聯電容器315可在大約iGpF到15GpF之間變化固 定電容器310設定為大約i2〇pf。 任％、上述具體實施方式都可用於運行—個等離子體處理 腔’，提供—種包括運行於第—偏置頻率下的第—週期和運 行於第二偏置頻率下的第二週_制程。例如，所述反應腔 β在個低偏置頻率下運行，例如，在主要银刻步驟中設定 為大約2ΜΗΖ，但是’為了在敍刻結束期間實現一種“軟著陸， (如ft landing)’系統可被切換於在一個更高的頻率偏置下 運行’例如’大約13MHz。 、最後，應當理解，上文中描述的過程和技術並非固有地 "及任何特定裝置’而應咖於多個元件的任何適當組合。 201108866 進一步地，各種類型的通用裝置均可根據本文所教導的内容 被應用。製造專用裝置來實現本文所述方法步驟也是有利 的。本發明是參照具财_來贿的，其财方面都應為 示例性而非限定性。本領域的技術人員應當理解，硬體、軟 體和固件的不同組合都可適用于實施本發明。比如，所述軟 體可以用很多種程式或腳本語言來執行，諸如彙編、C/CH、 PERL、SHELL、PHP、JAVA 等等。 本發較參照频實财;m其财方面都應為 示例性而非限定性的。此外’通過本文所描述的本發明具體 實施例和實施，本發明其他實施方式對於本領域技術人員應 是_§⑽。所ϋ實财細獨方面和/或元件可以在等 離子體處雜領域中單獨如任意組合使用。上述具體實施 例應被視為僅為補性的’本發_賴和精_是由權利 要求書定義的。 【圖式簡單說明】 # 圖1是現有技術的多重頻率等離子體處理腔的結構示意 圖’所述等離子體處理腔包括一個偏置射頻功率和兩 個源射頻功率發生器。 圖2是根據本發明的一個第一實施例的多重頻率等離子體 處理腔的結構示意圖，所述等離子體處理腔包括兩個 偏置射頻功率和—個源射頻功率發生器。 圖3示例丨生地示出了一個射頻功率匹配電路。 【主要元件符號說明】 反應腔200 201108866 上電極205 下電極210 等離子體220 射頻偏置功率源225、235、255 開關232 匹配電路240、245、250 射頻偏置頻率fl、f2、f3 固定電容器300、310 並聯電容器305 並聯電容器315 匹配電路320、322、334 並聯諧振電路330 開關332on. A high frequency f3 is lightly coupled to the cathode by a matching circuit 334 and a parallel resonant circuit 33, and two lower frequencies fi and f2 are coupled to the switch 332. The switch 332 can switchably pass fl or f2 A matching circuit 32A or 322 is coupled to the cathode. In this embodiment, the radio frequency f/f2 is provided by a single _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Each of the matching circuits is composed of a grid state and an inductor connected in series. In one embodiment, the matching circuit 3 includes a capacitor of 200 to 500 PF and an inductor of approximately 2 〇 to 5 〇 mH; the matching circuit 322 includes a capacitor of 50 to 200 pF and an approximately 〇. 5 〜5 The inductive circuit 32 includes a capacitor of about 25 pF and an inductor of about 0.2-0. 3 mH. The parallel ship circuit 330 is used to prevent energy from entering the source from the 13.56 MHz power source. That is, when the switch is micro-faceted to a 2 MHz bias source, the bias frequency is thirty times lower than the plasma_rate of 6 GMHz, so it does not skip the matching circuit 334. However, when the switch 332 is turned to 13.56 MHz buck power, it is biased by the matching circuit 334. Therefore, the present invention provides a parallel spectrum circuit in which a capacitor and an inductor are connected in parallel. In the present embodiment, when f 1 = 2 ΜΗΖ, f2 = 13. 56 MHz, f3 = 6G ΜΗΖ, the center frequency of the parallel resonant circuit 330 is 13 ΜΗζ, and its variable or bandwidth is f = 2 ΜΗΖ. This prevents the bias frequency 13 56 from leaking (1 〇 〇) into the source power source f3. The oscillating circuit is a short circuit 305 as _z before the switch 332 of the variable shunt capacitor 201108866 of FIG. 1, so that it is common to the matching circuit 32 微 and micro 言 (regardless of Which of the matching circuits 320 and 322 is connected to the switch 3). Another variable parallel capacitor 315 operates in conjunction with matching circuit 334 for frequency f3. In the present embodiment, two parallel capacitors are implemented using a variable vacuum capacitor (variable_capacit(10)). And, in the present embodiment, the above-mentioned variable parallel capacitor can be used for the specific test. One side of the fixed capacitor 11 is drawn flat on the . The fixed capacitor 300 protects the shunt capacitor 3〇5 so that it is not affected by the commercial RF current when set to a low capacitance value. Conversely, the fixed capacitor (10) is integrated with the variable and connected grid 315. The fixed capacitor protects the shunt capacitor 315 so that it is not affected by high RF currents when set to low capacitance. In the present embodiment, the variable parallel capacitor 305 can vary between approximately 3 〇 pF m leakage, and the fixed capacitor 300 is set to approximately 100 PF. Similarly, in the present embodiment, the variable shunt capacitor 315 can be varied between approximately iGpF and 15 GpF to set the fixed capacitor 310 to approximately i2 〇 pf. Any of the above embodiments may be used to operate a plasma processing chamber, providing a first cycle operating at a first bias frequency and a second cycle operating at a second bias frequency. . For example, the reaction chamber β operates at a low bias frequency, for example, set to approximately 2 在 in the main silver engraving step, but 'to achieve a "soft landing, (such as ft landing)" system during the end of the characterization Can be switched to operate 'at a '13 MHz' at a higher frequency offset. Finally, it should be understood that the processes and techniques described above are not inherently "and any particular device' Further suitable combinations of various types. 201108866 Further, various types of general purpose devices may be applied in accordance with the teachings herein. It is also advantageous to manufacture a dedicated device to implement the method steps described herein. The financial aspects should be exemplary and not limiting. Those skilled in the art will appreciate that different combinations of hardware, software and firmware are suitable for implementing the invention. For example, the software can be used in a wide variety of programs or scripts. Language to perform, such as assembly, C / CH, PERL, SHELL, PHP, JAVA, etc. This issue is more reference to the real money; m financial aspects should be examples In addition, by way of specific embodiments and implementations of the invention described herein, other embodiments of the invention should be <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The plasma is used in the field of any combination, and the above specific embodiments should be regarded as merely complementary. The present invention is defined by the claims. [Simplified illustration] #图1 A schematic diagram of a prior art multi-frequency plasma processing chamber comprising a biased RF power and two source RF power generators. Figure 2 is a multiple frequency according to a first embodiment of the present invention. Schematic diagram of a plasma processing chamber comprising two biased RF powers and a source RF power generator. Figure 3 shows a schematic representation of an RF power matching circuit. Reaction chamber 200 201108866 Upper electrode 205 Lower electrode 210 Plasma 220 RF bias power source 225, 235, 255 Switch 232 matching circuit 240, 245, 250 RF bias frequency fl, f2, f3 fixed capacitor 300, 310 shunt capacitor 305 shunt capacitor 315 matching circuit 320, 322, 334 parallel resonant circuit 330 switch 332
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