TWI482223B - Method for manufacturing touch panel - Google Patents

Method for manufacturing touch panel Download PDF

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TWI482223B
TWI482223B TW101140497A TW101140497A TWI482223B TW I482223 B TWI482223 B TW I482223B TW 101140497 A TW101140497 A TW 101140497A TW 101140497 A TW101140497 A TW 101140497A TW I482223 B TWI482223 B TW I482223B
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Taiwan
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transparent conductive
conductive layer
layer
plasma
touch panel
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TW101140497A
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Chinese (zh)
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TW201419420A (en
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Hsiao Wen Kuo
Li Chieh Hsu
Wei Chuan Chen
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Rtr Tech Technology Co Ltd
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Priority to TW101140497A priority Critical patent/TWI482223B/en
Priority to CN201310529432.7A priority patent/CN103809804A/en
Publication of TW201419420A publication Critical patent/TW201419420A/en
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Publication of TWI482223B publication Critical patent/TWI482223B/en

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觸控面板之製造方法Touch panel manufacturing method

本發明係有關於一種觸控面板之製造方法,尤指一種將電漿技術應用於觸控面板圖案化製程的製造方法。The invention relates to a method for manufacturing a touch panel, in particular to a manufacturing method for applying a plasma technology to a touch panel patterning process.

目前觸控面板之製造過程中,其圖案化製程可分為乾式製程與濕式製程。其中,濕式製程包含光阻塗布與顯影等步驟,其製程複雜,圖案化的過程耗時及蝕刻過程不易控制。At present, in the manufacturing process of the touch panel, the patterning process can be divided into a dry process and a wet process. Among them, the wet process includes steps such as photoresist coating and development, the process is complicated, the process of patterning is time consuming and the etching process is difficult to control.

觸控面板上的透明導電層主要是由銦錫氧化物(indium tin oxide,ITO)所組成,由於導電層的鍍膜方式基本上為整個平面,無法針對所要的圖形進行濺鍍,因此,若要在已濺鍍完成的基板上形成圖案,需將導電層進行蝕刻。目前蝕刻的方式有兩種,分別為濕式蝕刻與乾式蝕刻,其中濕式蝕刻之圖案化是由光罩所形成,而製造圖案化之習知手段,係採用兩道蝕刻製程,其為金屬層蝕刻以及導電層蝕刻,在導電層蝕刻之過程中,前道蝕刻過程後所曝露之金屬層,包含於金屬層上之引線或導線,容易受到二次蝕刻液之侵蝕,而過度腐蝕的結果會造成金屬層之尺寸不精準,影響導電層之導電性。由於導電層大多為結晶型氧化物所組成,其蝕刻速率與穩定性不易控制,易造成蝕刻不均、產品良率降低等缺點。The transparent conductive layer on the touch panel is mainly composed of indium tin oxide (ITO). Since the coating method of the conductive layer is basically the entire plane, it is impossible to perform sputtering on the desired pattern. A pattern is formed on the sputtered substrate, and the conductive layer is etched. At present, there are two ways of etching, namely wet etching and dry etching, wherein the patterning of wet etching is formed by a photomask, and the conventional method of manufacturing patterning is to adopt two etching processes, which are metal. Layer etching and conductive layer etching. During the etching of the conductive layer, the metal layer exposed after the previous etching process, the leads or wires included in the metal layer are easily corroded by the secondary etching solution, and the result of excessive etching The size of the metal layer is inaccurate and affects the conductivity of the conductive layer. Since the conductive layer is mostly composed of a crystalline oxide, the etching rate and stability are not easily controlled, and it is easy to cause uneven etching and product yield reduction.

綜上所述,對於觸控面板之蝕刻過程仍需良好的解決方案,以解決前述之問題。In summary, a good solution is needed for the etching process of the touch panel to solve the aforementioned problems.

本發明揭露一種應用電漿技術於觸控面板之製造方法中,其係以電漿轟擊手段以改質導電薄膜層,提高導電薄膜層之蝕刻速率為本發明之目的。The invention discloses a method for manufacturing a touch panel by using a plasma technology, which is to modify the conductive film layer by a plasma bombardment method, and to improve the etching rate of the conductive film layer is the object of the invention.

本發明係有關於一種觸控面板之製造方法,其包括下列步驟:提供基板,該基板上依次形成透明導電層以及金屬層,形成光阻層於金屬層上,並圖案化光阻層。蝕刻金屬層,以露出局部之透明導電層,以電漿轟擊透明導電層,蝕刻透明導電層。以及蝕刻並圖案化金屬層,經轟擊及蝕刻後之透明導電層形成複數感測串列。The invention relates to a method for manufacturing a touch panel, comprising the steps of: providing a substrate on which a transparent conductive layer and a metal layer are sequentially formed, forming a photoresist layer on the metal layer, and patterning the photoresist layer. The metal layer is etched to expose a portion of the transparent conductive layer, and the transparent conductive layer is bombarded with a plasma to etch the transparent conductive layer. And etching and patterning the metal layer, and the transparent conductive layer after bombardment and etching forms a complex sensing series.

較佳為,其中光阻層可藉由網版印刷法、噴塗法、旋轉塗布法或狹縫式塗布法所形成。Preferably, the photoresist layer can be formed by a screen printing method, a spray coating method, a spin coating method or a slit coating method.

較佳為,其中光阻層可為正型光阻或負型光阻。Preferably, the photoresist layer can be a positive photoresist or a negative photoresist.

較佳為,其中透明導電薄膜層為結晶型銦錫氧化物。Preferably, the transparent conductive film layer is a crystalline indium tin oxide.

較佳為,其中電漿轟擊可使用大氣電漿、低壓電漿、高溫電漿或低溫電漿進行轟擊。Preferably, the plasma bombardment can be bombarded using atmospheric plasma, low pressure plasma, high temperature plasma or low temperature plasma.

較佳為,其中電漿轟擊係用以改變透明導電層之表面能。Preferably, the plasma bombardment is used to change the surface energy of the transparent conductive layer.

較佳為,其中電漿轟擊係用以蝕刻透明導電層之表面。Preferably, the plasma bombardment is used to etch the surface of the transparent conductive layer.

較佳為,其中電漿轟擊所使用之氣氛可為氮氣、氬氣、氧氣及其混和氣氛。Preferably, the atmosphere used for plasma bombardment may be nitrogen, argon, oxygen, and a mixed atmosphere thereof.

較佳為,其中電漿轟擊之時間為10秒至5分鐘。Preferably, the plasma bombardment time is from 10 seconds to 5 minutes.

較佳為,其中前述之該等步驟係均採用捲對捲製程。Preferably, the foregoing steps are all performed by a roll-to-roll process.

以下參考實施例及申請專利範圍而揭述依照本發明之例示具體實施例。在此所揭述的例示具體實施例之各種修改、調整或變化因所揭示而對熟悉該技術領域之人士為顯而易知。應了解,所有此種依據本發明之教示且經此教示而改進此技術的修改、調整或變化均視為在本發明之範圍與精髓內。Specific embodiments in accordance with the present invention are disclosed below with reference to the embodiments and claims. Various modifications, adaptations, and variations of the exemplary embodiments disclosed herein will be apparent to those skilled in the art. It is to be understood that all such modifications, adaptations, and variations of the present invention are intended to be within the scope and spirit of the invention.

本發明提供一種觸控面板之製造方法,其具體實施例之詳細步驟請參見圖1a至圖1d。The invention provides a method for manufacturing a touch panel. For detailed steps of the specific embodiment, please refer to FIG. 1a to FIG. 1d.

如圖1a所示,首先,具備一基板1,基板1之表面上依次形成有一透明導電層2以及至少一金屬層3,於本發明之較佳具體實施例中,金屬層3為一層。其中,基板1例如可為玻璃、強化玻璃、聚碳酸酯(PC)及聚甲基丙烯酸甲酯(PMMA)之複合材、聚碳酸酯及聚甲基丙烯酸甲酯之複合材、聚酯(PET)、聚醯胺(PE)、矽、玻璃、塑膠、金屬或陶瓷。透明導電層2例如可為金屬氧化物、結晶型銦錫氧化物。其中,金屬氧化物例如為氧化銦錫(indium tin oxide,ITO)、氧化銦鋅(indium zinc oxide,IZO)、氧化鎘錫(cadmium tin oxide,CTO)、氧化鋁鋅(aluminum zinc oxide,AZO)、氧化銦鋅錫(indium tin zinc oxide,ITZO)、氧化鋅(zinc oxide)、氧化鎘(cadmium oxide)、氧化鉿(hafnium oxide,HfO)、氧化銦鎵鋅(indium gallium zinc oxide,InGaZnO)、氧化銦鎵鋅鎂(indium gallium zinc magnesium oxide,InGaZnMgO)、氧化銦鎵鎂(indium gallium magnesium oxide,InGaMgO)或氧化銦鎵鋁 (indium gallium aluminum oxide,InGaAlO)等)所組成。其中,金屬層3例如可為至少一層導電金屬層,或者多層導電金屬層所組成,其材質可為導電金屬或導電合金,例如銅合金、鋁合金、金、銀、鋁、銅、鉬等。有關多層導電金屬層之結構,例如可為鉬層/鋁層/鉬層之堆疊結構,或者可為選自銅合金、鋁合金、金、銀、鋁、銅或鉬等之一或多種材質堆疊而成之多層導電金屬層結構。As shown in FIG. 1a, first, a substrate 1 is provided. A transparent conductive layer 2 and at least one metal layer 3 are sequentially formed on the surface of the substrate 1. In a preferred embodiment of the present invention, the metal layer 3 is a layer. The substrate 1 may be, for example, a composite of glass, tempered glass, polycarbonate (PC), and polymethyl methacrylate (PMMA), a composite of polycarbonate and polymethyl methacrylate, and polyester (PET). ), polyamine (PE), bismuth, glass, plastic, metal or ceramic. The transparent conductive layer 2 may be, for example, a metal oxide or a crystalline indium tin oxide. The metal oxide is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), or aluminum zinc oxide (AZO). , indium tin zinc oxide (ITZO), zinc oxide, cadmium oxide, hafnium oxide (HfO), indium gallium zinc oxide (InGaZnO), Indium gallium zinc magnesium oxide (InGaZnMgO), indium gallium magnesium oxide (InGaMgO) or indium gallium aluminum oxide (indium gallium aluminum oxide, InGaAlO), etc. The metal layer 3 may be, for example, at least one conductive metal layer or a plurality of conductive metal layers, and the material thereof may be a conductive metal or a conductive alloy, such as a copper alloy, an aluminum alloy, gold, silver, aluminum, copper, molybdenum or the like. The structure of the multilayer conductive metal layer may be, for example, a stacked structure of a molybdenum layer/aluminum layer/molybdenum layer, or may be one or more materials selected from the group consisting of copper alloy, aluminum alloy, gold, silver, aluminum, copper or molybdenum. A multilayer conductive metal layer structure.

如圖1b所示,首先,對基板1之金屬層3表面形成一光阻層4,其中,光阻層4例如可為固態光阻、乾膜光阻、液態光阻劑或光阻膠等物質所組成。另外,光阻層4可藉由熱壓乾膜光阻、網版印刷法、噴塗法、旋轉塗布法或狹縫式塗布法所形成,光阻層4不限制為正型光阻或負型光阻。接著,以特定圖案的光罩5對光阻層4經過曝光顯影進行圖案化,獲得圖案化之光阻層4,其中,圖案化的製程大致是藉由微影製程(photolithography)而達成,微影製程包括光阻塗布(photoresist coating)、軟烘烤(soft baking)、光罩對準(mask aligning)、曝光(exposure)、曝光後烘烤(post-exposure)、光阻顯影(developing photoresist)與硬烘烤(hard baking)。接著,進行蝕刻金屬層3至透明導電層2之局部表面露出為止。另外,於本發明之具體實施例中,光阻層4亦可以為一具有保護被覆功能之塗布層所替代,例如金屬層、聚合物層或黏著劑層。As shown in FIG. 1b, first, a photoresist layer 4 is formed on the surface of the metal layer 3 of the substrate 1. The photoresist layer 4 can be, for example, a solid photoresist, a dry film photoresist, a liquid photoresist or a photoresist. Composed of substances. In addition, the photoresist layer 4 can be formed by hot-pressing film photoresist, screen printing, spray coating, spin coating or slit coating, and the photoresist layer 4 is not limited to a positive photoresist or a negative photoresist. Light resistance. Then, the photoresist layer 4 is patterned by exposure and development with a mask 5 of a specific pattern to obtain a patterned photoresist layer 4, wherein the patterning process is substantially achieved by photolithography. The shadow process includes photoresist coating, soft baking, mask aligning, exposure, post-exposure, and developing photoresist. With hard baking. Next, the etching of the metal layer 3 to the partial surface of the transparent conductive layer 2 is performed. In addition, in a specific embodiment of the present invention, the photoresist layer 4 may also be replaced by a coating layer having a protective coating function, such as a metal layer, a polymer layer or an adhesive layer.

如圖1c所示,以電漿轟擊對透明導電層2表面進行改 質,電漿轟擊之種類可為大氣電漿、低壓電漿、高溫電漿或低溫電漿之任一種,電漿轟擊所使用之氣體可為氮氣、氬氣、氧氣或其混和氣體。電漿轟擊進行改質之時間係介於10秒至5分鐘之範圍,其中,由於在觸控面板之製程中,基板1、透明導電層2、金屬層3以及光阻層4皆為奈米或微米等級,因此電漿轟擊之能量亦可能造成透明導電層2些微的破壞,意即產生輕微的蝕刻作用,因此電漿轟擊亦可應用於蝕刻透明導電層2之表面。As shown in Figure 1c, the surface of the transparent conductive layer 2 is modified by plasma bombardment. The type of plasma bombardment may be any one of atmospheric plasma, low pressure plasma, high temperature plasma or low temperature plasma. The gas used for plasma bombardment may be nitrogen, argon, oxygen or a mixed gas thereof. The time for the plasma bombardment to be modified is in the range of 10 seconds to 5 minutes, wherein, in the process of the touch panel, the substrate 1, the transparent conductive layer 2, the metal layer 3, and the photoresist layer 4 are all nanometers. Or micron grade, so the energy of plasma bombardment may also cause slight damage of the transparent conductive layer 2, that is, a slight etching effect, so plasma bombardment can also be applied to the surface of the transparent conductive layer 2.

如圖1d所示,接著蝕刻經改質之透明導電層2,由於透明導電層2已經過電漿轟擊,因此在蝕刻過程中可減少蝕刻時間,充分達到保護金屬層3之功效。As shown in FIG. 1d, the modified transparent conductive layer 2 is then etched. Since the transparent conductive layer 2 has been subjected to plasma bombardment, the etching time can be reduced during the etching process, and the effect of protecting the metal layer 3 is sufficiently achieved.

請參見圖1e所示,蝕刻透明導電層2以形成圖案化,接著去除光阻層4,同時,經改質及蝕刻完成之透明導電層2形成複數感測串列2’。最後,經圖案化之金屬層形成周邊線路(圖未示),作為該等感測串列2’之間的電性連接,以獲得一圖案化之基板。Referring to FIG. 1e, the transparent conductive layer 2 is etched to form a pattern, and then the photoresist layer 4 is removed. At the same time, the modified and etched transparent conductive layer 2 forms a complex sensing series 2'. Finally, the patterned metal layer forms a peripheral line (not shown) as an electrical connection between the sensing series 2' to obtain a patterned substrate.

本發明之觸控面板之製造方法具有連續性生產特性,且本發明之基板為具可撓性的基板,因此前述之該等步驟係均採用捲對捲(roll-to-roll)製程,以達到高效能、低成本之優點。The manufacturing method of the touch panel of the present invention has continuous production characteristics, and the substrate of the present invention is a flexible substrate. Therefore, the foregoing steps are all performed by a roll-to-roll process. Achieve high efficiency and low cost.

由於本發明之透明導電層經過電漿轟擊改質之後,其表面能會產生改變,且會破壞其結晶結構,使得透明導電層更易於被蝕刻,進而提高蝕刻速率,避免在蝕刻過程中對金屬層產生過度的側蝕,而達到保護金屬層之功效。Since the transparent conductive layer of the present invention is modified by plasma bombardment, its surface energy changes, and its crystal structure is destroyed, so that the transparent conductive layer is more easily etched, thereby increasing the etching rate and avoiding metal during the etching process. The layer produces excessive side etching and achieves the effect of protecting the metal layer.

1‧‧‧基板1‧‧‧Substrate

2‧‧‧透明導電層2‧‧‧Transparent conductive layer

2’‧‧‧感測串列2’‧‧‧Sensor series

3‧‧‧金屬層3‧‧‧metal layer

4‧‧‧光阻層4‧‧‧ photoresist layer

5‧‧‧光罩5‧‧‧Photomask

圖1a係本發明之具有透明導電層及金屬層之基板的示意圖。1a is a schematic view of a substrate having a transparent conductive layer and a metal layer of the present invention.

圖1b係本發明之基板以光罩曝光顯影形成光阻層,且蝕刻金屬層之示意圖。FIG. 1b is a schematic view showing the substrate of the present invention formed by forming a photoresist layer by exposure and development of a photomask, and etching the metal layer.

圖1c對基板之透明導電層進行電漿轟擊之示意圖。Figure 1c is a schematic illustration of plasma bombardment of a transparent conductive layer of a substrate.

圖1d經改質之透明導電層進行蝕刻之示意圖。Figure 1d is a schematic illustration of etching of a modified transparent conductive layer.

圖1e透明導電層蝕刻後形成複數感測串列示意圖。Figure 1e shows a schematic diagram of a complex sense series after etching of the transparent conductive layer.

1‧‧‧基板1‧‧‧Substrate

2‧‧‧透明導電層2‧‧‧Transparent conductive layer

2’‧‧‧感測串列2’‧‧‧Sensor series

3‧‧‧金屬層3‧‧‧metal layer

4‧‧‧光阻層4‧‧‧ photoresist layer

5‧‧‧光罩5‧‧‧Photomask

Claims (10)

一種觸控面板之製造方法,其包括下列步驟:提供一基板,該基板上依次形成一透明導電層以及至少一金屬層;形成一光阻層於該至少一金屬層上,並圖案化該光阻層;蝕刻該至少一金屬層,以露出局部之該透明導電層;以電漿轟擊該透明導電層;蝕刻該透明導電層;以及蝕刻並圖案化該至少一金屬層,經轟擊及蝕刻後之該透明導電層形成複數個感測串列。A method for manufacturing a touch panel, comprising the steps of: providing a substrate on which a transparent conductive layer and at least one metal layer are sequentially formed; forming a photoresist layer on the at least one metal layer, and patterning the light a resist layer; etching the at least one metal layer to expose a portion of the transparent conductive layer; bombarding the transparent conductive layer with a plasma; etching the transparent conductive layer; and etching and patterning the at least one metal layer after bombardment and etching The transparent conductive layer forms a plurality of sensing series. 如申請專利範圍第1項之觸控面板之製造方法,其中該光阻層可藉由網版印刷法、噴塗法、旋轉塗布法或狹縫式塗布法所形成。The method of manufacturing a touch panel according to claim 1, wherein the photoresist layer is formed by a screen printing method, a spray coating method, a spin coating method, or a slit coating method. 如申請專利範圍第1項或第2項之觸控面板之製造方法,其中該光阻層係為正型光阻或負型光阻。The method of manufacturing a touch panel according to claim 1 or 2, wherein the photoresist layer is a positive photoresist or a negative photoresist. 如申請專利範圍第1項之觸控面板之製造方法,其中該透明導電薄膜層為結晶型銦錫氧化物。The method of manufacturing a touch panel according to claim 1, wherein the transparent conductive film layer is a crystalline indium tin oxide. 如申請專利範圍第1項之觸控面板之製造方法,其中該以電漿轟擊該透明導電層之步驟係使用大氣電漿、低壓電漿、高溫電漿或低溫電漿進行轟擊。The method for manufacturing a touch panel according to claim 1, wherein the step of bombarding the transparent conductive layer by plasma is bombarded with atmospheric plasma, low-voltage plasma, high-temperature plasma or low-temperature plasma. 如申請專利範圍第1項之觸控面板之製造方法,其中該以電漿轟擊該透明導電層之步驟係被執行用以改變該透明導電層之表面能。The method of manufacturing a touch panel according to claim 1, wherein the step of bombarding the transparent conductive layer with a plasma is performed to change a surface energy of the transparent conductive layer. 如申請專利範圍第1項之觸控面板之製造方法,其中該以電漿轟擊該透明導電層之步驟係被執行用於電漿蝕刻該透明導電層之表面。The method of manufacturing a touch panel according to claim 1, wherein the step of bombarding the transparent conductive layer with a plasma is performed for plasma etching the surface of the transparent conductive layer. 如申請專利範圍第1項之觸控面板之製造方法,其中於該以電漿轟擊該透明導電層之步驟中所使用之氣體係氮氣、氬氣、氧氣或其混和氣體。The method of manufacturing a touch panel according to claim 1, wherein the gas system used in the step of bombarding the transparent conductive layer by plasma is nitrogen gas, argon gas, oxygen gas or a mixed gas thereof. 如申請專利範圍第1項之觸控面板之製造方法,其中執行該以電漿轟擊該透明導電層之步驟之時間為10秒至5分鐘。The method of manufacturing a touch panel according to claim 1, wherein the step of performing the step of bombarding the transparent conductive layer by plasma is from 10 seconds to 5 minutes. 如申請專利範圍第1項之觸控面板之製造方法,其中前述該等步驟均採用捲對捲製程。The method for manufacturing a touch panel according to claim 1, wherein the foregoing steps all adopt a roll-to-roll process.
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