TWI479531B - 離子源與來自其之特定離子物種離子電流輸出的改善方法 - Google Patents

離子源與來自其之特定離子物種離子電流輸出的改善方法 Download PDF

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Publication number
TWI479531B
TWI479531B TW098141209A TW98141209A TWI479531B TW I479531 B TWI479531 B TW I479531B TW 098141209 A TW098141209 A TW 098141209A TW 98141209 A TW98141209 A TW 98141209A TW I479531 B TWI479531 B TW I479531B
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TW
Taiwan
Prior art keywords
source
ion
gas
processing chamber
ion source
Prior art date
Application number
TW098141209A
Other languages
English (en)
Chinese (zh)
Other versions
TW201029042A (en
Inventor
本雄 具
維克多 本夫尼斯特
克里斯多福Ａ 羅蘭德
奎格Ｒ 錢尼
法蘭克 辛克萊
奈爾Ｊ 巴森
Original Assignee
瓦里安半導體設備公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 瓦里安半導體設備公司 filed Critical 瓦里安半導體設備公司
Publication of TW201029042A publication Critical patent/TW201029042A/zh
Application granted granted Critical
Publication of TWI479531B publication Critical patent/TWI479531B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
TW098141209A 2008-12-04 2009-12-02 離子源與來自其之特定離子物種離子電流輸出的改善方法 TWI479531B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/328,096 US8501624B2 (en) 2008-12-04 2008-12-04 Excited gas injection for ion implant control

Publications (2)

Publication Number Publication Date
TW201029042A TW201029042A (en) 2010-08-01
TWI479531B true TWI479531B (zh) 2015-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW098141209A TWI479531B (zh) 2008-12-04 2009-12-02 離子源與來自其之特定離子物種離子電流輸出的改善方法

Country Status (6)

Country Link
US (2) US8501624B2 (OSRAM)
JP (1) JP2012511104A (OSRAM)
KR (1) KR20110103992A (OSRAM)
CN (1) CN102232241B (OSRAM)
TW (1) TWI479531B (OSRAM)
WO (1) WO2010065718A2 (OSRAM)

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KR102219501B1 (ko) * 2016-04-05 2021-02-25 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 작업물 내로 프로세싱 종을 주입하는 방법 및 작업물 내로 도펀트를 주입하는 방법, 및 작업물을 프로세싱하기 위한 장치
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
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US10636645B2 (en) * 2018-04-20 2020-04-28 Perkinelmer Health Sciences Canada, Inc. Dual chamber electron impact and chemical ionization source
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CN110379698A (zh) * 2019-07-29 2019-10-25 上海集成电路研发中心有限公司 一种具有双离化室的离子源
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Also Published As

Publication number Publication date
CN102232241A (zh) 2011-11-02
WO2010065718A3 (en) 2010-08-19
JP2012511104A (ja) 2012-05-17
CN102232241B (zh) 2014-05-14
TW201029042A (en) 2010-08-01
US20100140077A1 (en) 2010-06-10
US9018829B2 (en) 2015-04-28
WO2010065718A2 (en) 2010-06-10
US20130313443A1 (en) 2013-11-28
KR20110103992A (ko) 2011-09-21
US8501624B2 (en) 2013-08-06

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