TWI473301B - - Google Patents
Info
- Publication number
- TWI473301B TWI473301B TW101118956A TW101118956A TWI473301B TW I473301 B TWI473301 B TW I473301B TW 101118956 A TW101118956 A TW 101118956A TW 101118956 A TW101118956 A TW 101118956A TW I473301 B TWI473301 B TW I473301B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101118956A TW201349569A (zh) | 2012-05-28 | 2012-05-28 | 發光元件及其製作方法 |
CN201210259330.3A CN103456858B (zh) | 2012-05-28 | 2012-07-20 | 发光元件及其制作方法 |
CN201610668838.7A CN106057994B (zh) | 2012-05-28 | 2012-07-20 | 发光元件 |
US13/568,399 US8766293B2 (en) | 2011-08-08 | 2012-08-07 | Light-emitting device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101118956A TW201349569A (zh) | 2012-05-28 | 2012-05-28 | 發光元件及其製作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201349569A TW201349569A (zh) | 2013-12-01 |
TWI473301B true TWI473301B (fr) | 2015-02-11 |
Family
ID=49739020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101118956A TW201349569A (zh) | 2011-08-08 | 2012-05-28 | 發光元件及其製作方法 |
Country Status (2)
Country | Link |
---|---|
CN (2) | CN106057994B (fr) |
TW (1) | TW201349569A (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201349569A (zh) * | 2012-05-28 | 2013-12-01 | Genesis Photonics Inc | 發光元件及其製作方法 |
CN112614921A (zh) * | 2020-12-31 | 2021-04-06 | 深圳第三代半导体研究院 | 一种发光二极管及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050199895A1 (en) * | 2004-03-12 | 2005-09-15 | Samsung Electronics Co., Ltd. | Nitride-based light-emitting device and method of manufacturing the same |
US20070018183A1 (en) * | 2005-07-21 | 2007-01-25 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
TW201110413A (en) * | 2009-06-26 | 2011-03-16 | Showa Denko Kk | Light emitting device, production method, lamp, electronic equipment and mechanical equipment |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100647279B1 (ko) * | 2003-11-14 | 2006-11-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
CN2760762Y (zh) * | 2004-04-08 | 2006-02-22 | 炬鑫科技股份有限公司 | 氮化镓系发光二极管结构 |
CN101728462A (zh) * | 2008-10-17 | 2010-06-09 | 先进开发光电股份有限公司 | 多波长发光二极管及其制造方法 |
CN203260631U (zh) * | 2010-07-01 | 2013-10-30 | 西铁城控股株式会社 | Led光源装置 |
TW201349569A (zh) * | 2012-05-28 | 2013-12-01 | Genesis Photonics Inc | 發光元件及其製作方法 |
CN102956781B (zh) * | 2011-08-31 | 2015-03-11 | 新世纪光电股份有限公司 | 发光元件及其制作方法 |
-
2012
- 2012-05-28 TW TW101118956A patent/TW201349569A/zh not_active IP Right Cessation
- 2012-07-20 CN CN201610668838.7A patent/CN106057994B/zh active Active
- 2012-07-20 CN CN201210259330.3A patent/CN103456858B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050199895A1 (en) * | 2004-03-12 | 2005-09-15 | Samsung Electronics Co., Ltd. | Nitride-based light-emitting device and method of manufacturing the same |
US20070018183A1 (en) * | 2005-07-21 | 2007-01-25 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
TW201110413A (en) * | 2009-06-26 | 2011-03-16 | Showa Denko Kk | Light emitting device, production method, lamp, electronic equipment and mechanical equipment |
Also Published As
Publication number | Publication date |
---|---|
CN103456858B (zh) | 2016-09-14 |
CN106057994B (zh) | 2019-03-15 |
CN103456858A (zh) | 2013-12-18 |
TW201349569A (zh) | 2013-12-01 |
CN106057994A (zh) | 2016-10-26 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |