TWI473301B - - Google Patents

Info

Publication number
TWI473301B
TWI473301B TW101118956A TW101118956A TWI473301B TW I473301 B TWI473301 B TW I473301B TW 101118956 A TW101118956 A TW 101118956A TW 101118956 A TW101118956 A TW 101118956A TW I473301 B TWI473301 B TW I473301B
Authority
TW
Taiwan
Application number
TW101118956A
Other languages
Chinese (zh)
Other versions
TW201349569A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW101118956A priority Critical patent/TW201349569A/zh
Priority to CN201210259330.3A priority patent/CN103456858B/zh
Priority to CN201610668838.7A priority patent/CN106057994B/zh
Priority to US13/568,399 priority patent/US8766293B2/en
Publication of TW201349569A publication Critical patent/TW201349569A/zh
Application granted granted Critical
Publication of TWI473301B publication Critical patent/TWI473301B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials
TW101118956A 2011-08-08 2012-05-28 發光元件及其製作方法 TW201349569A (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW101118956A TW201349569A (zh) 2012-05-28 2012-05-28 發光元件及其製作方法
CN201210259330.3A CN103456858B (zh) 2012-05-28 2012-07-20 发光元件及其制作方法
CN201610668838.7A CN106057994B (zh) 2012-05-28 2012-07-20 发光元件
US13/568,399 US8766293B2 (en) 2011-08-08 2012-08-07 Light-emitting device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101118956A TW201349569A (zh) 2012-05-28 2012-05-28 發光元件及其製作方法

Publications (2)

Publication Number Publication Date
TW201349569A TW201349569A (zh) 2013-12-01
TWI473301B true TWI473301B (fr) 2015-02-11

Family

ID=49739020

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101118956A TW201349569A (zh) 2011-08-08 2012-05-28 發光元件及其製作方法

Country Status (2)

Country Link
CN (2) CN106057994B (fr)
TW (1) TW201349569A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201349569A (zh) * 2012-05-28 2013-12-01 Genesis Photonics Inc 發光元件及其製作方法
CN112614921A (zh) * 2020-12-31 2021-04-06 深圳第三代半导体研究院 一种发光二极管及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199895A1 (en) * 2004-03-12 2005-09-15 Samsung Electronics Co., Ltd. Nitride-based light-emitting device and method of manufacturing the same
US20070018183A1 (en) * 2005-07-21 2007-01-25 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
TW201110413A (en) * 2009-06-26 2011-03-16 Showa Denko Kk Light emitting device, production method, lamp, electronic equipment and mechanical equipment

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647279B1 (ko) * 2003-11-14 2006-11-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
CN2760762Y (zh) * 2004-04-08 2006-02-22 炬鑫科技股份有限公司 氮化镓系发光二极管结构
CN101728462A (zh) * 2008-10-17 2010-06-09 先进开发光电股份有限公司 多波长发光二极管及其制造方法
CN203260631U (zh) * 2010-07-01 2013-10-30 西铁城控股株式会社 Led光源装置
TW201349569A (zh) * 2012-05-28 2013-12-01 Genesis Photonics Inc 發光元件及其製作方法
CN102956781B (zh) * 2011-08-31 2015-03-11 新世纪光电股份有限公司 发光元件及其制作方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199895A1 (en) * 2004-03-12 2005-09-15 Samsung Electronics Co., Ltd. Nitride-based light-emitting device and method of manufacturing the same
US20070018183A1 (en) * 2005-07-21 2007-01-25 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
TW201110413A (en) * 2009-06-26 2011-03-16 Showa Denko Kk Light emitting device, production method, lamp, electronic equipment and mechanical equipment

Also Published As

Publication number Publication date
CN103456858B (zh) 2016-09-14
CN106057994B (zh) 2019-03-15
CN103456858A (zh) 2013-12-18
TW201349569A (zh) 2013-12-01
CN106057994A (zh) 2016-10-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees