CN106057994B - 发光元件 - Google Patents
发光元件 Download PDFInfo
- Publication number
- CN106057994B CN106057994B CN201610668838.7A CN201610668838A CN106057994B CN 106057994 B CN106057994 B CN 106057994B CN 201610668838 A CN201610668838 A CN 201610668838A CN 106057994 B CN106057994 B CN 106057994B
- Authority
- CN
- China
- Prior art keywords
- layer
- type doping
- semiconductor layer
- doping semiconductor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 118
- 239000000463 material Substances 0.000 claims abstract description 33
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- -1 aluminium tin-oxide Chemical compound 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- IEJHYFOJNUCIBD-UHFFFAOYSA-N cadmium(2+) indium(3+) oxygen(2-) Chemical compound [O-2].[Cd+2].[In+3] IEJHYFOJNUCIBD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 3
- UMJICYDOGPFMOB-UHFFFAOYSA-N zinc;cadmium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Cd+2] UMJICYDOGPFMOB-UHFFFAOYSA-N 0.000 claims description 3
- DTMUJVXXDFWQOA-UHFFFAOYSA-N [Sn].FOF Chemical compound [Sn].FOF DTMUJVXXDFWQOA-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 239
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000000407 epitaxy Methods 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000035755 proliferation Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 229960004424 carbon dioxide Drugs 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101118956 | 2012-05-28 | ||
| TW101118956A TW201349569A (zh) | 2012-05-28 | 2012-05-28 | 發光元件及其製作方法 |
| CN201210259330.3A CN103456858B (zh) | 2012-05-28 | 2012-07-20 | 发光元件及其制作方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210259330.3A Division CN103456858B (zh) | 2012-05-28 | 2012-07-20 | 发光元件及其制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106057994A CN106057994A (zh) | 2016-10-26 |
| CN106057994B true CN106057994B (zh) | 2019-03-15 |
Family
ID=49739020
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610668838.7A Active CN106057994B (zh) | 2012-05-28 | 2012-07-20 | 发光元件 |
| CN201210259330.3A Active CN103456858B (zh) | 2012-05-28 | 2012-07-20 | 发光元件及其制作方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210259330.3A Active CN103456858B (zh) | 2012-05-28 | 2012-07-20 | 发光元件及其制作方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN106057994B (fr) |
| TW (1) | TW201349569A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201349569A (zh) * | 2012-05-28 | 2013-12-01 | Genesis Photonics Inc | 發光元件及其製作方法 |
| CN112614921A (zh) * | 2020-12-31 | 2021-04-06 | 深圳第三代半导体研究院 | 一种发光二极管及其制造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100401539C (zh) * | 2003-11-14 | 2008-07-09 | 三星电子株式会社 | 氮化物基发光装置及其制造方法 |
| CN102956781A (zh) * | 2011-08-31 | 2013-03-06 | 新世纪光电股份有限公司 | 发光元件及其制作方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100634503B1 (ko) * | 2004-03-12 | 2006-10-16 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| CN2760762Y (zh) * | 2004-04-08 | 2006-02-22 | 炬鑫科技股份有限公司 | 氮化镓系发光二极管结构 |
| US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
| CN101728462A (zh) * | 2008-10-17 | 2010-06-09 | 先进开发光电股份有限公司 | 多波长发光二极管及其制造方法 |
| JP2011009502A (ja) * | 2009-06-26 | 2011-01-13 | Showa Denko Kk | 発光素子、その製造方法、ランプ、電子機器及び機械装置 |
| US9159892B2 (en) * | 2010-07-01 | 2015-10-13 | Citizen Holdings Co., Ltd. | LED light source device and manufacturing method for the same |
| TW201349569A (zh) * | 2012-05-28 | 2013-12-01 | Genesis Photonics Inc | 發光元件及其製作方法 |
-
2012
- 2012-05-28 TW TW101118956A patent/TW201349569A/zh not_active IP Right Cessation
- 2012-07-20 CN CN201610668838.7A patent/CN106057994B/zh active Active
- 2012-07-20 CN CN201210259330.3A patent/CN103456858B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100401539C (zh) * | 2003-11-14 | 2008-07-09 | 三星电子株式会社 | 氮化物基发光装置及其制造方法 |
| CN102956781A (zh) * | 2011-08-31 | 2013-03-06 | 新世纪光电股份有限公司 | 发光元件及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103456858B (zh) | 2016-09-14 |
| CN103456858A (zh) | 2013-12-18 |
| TW201349569A (zh) | 2013-12-01 |
| TWI473301B (fr) | 2015-02-11 |
| CN106057994A (zh) | 2016-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240116 Address after: Tokushima County, Japan Patentee after: NICHIA Corp. Address before: Taiwan, China Tainan, south of science and Technology Industrial Park, No. 5, No. three Patentee before: Genesis Photonics Inc. |