TWI472610B - 用於清潔化學機械拋光後基板之組合物 - Google Patents
用於清潔化學機械拋光後基板之組合物 Download PDFInfo
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- TWI472610B TWI472610B TW101130518A TW101130518A TWI472610B TW I472610 B TWI472610 B TW I472610B TW 101130518 A TW101130518 A TW 101130518A TW 101130518 A TW101130518 A TW 101130518A TW I472610 B TWI472610 B TW I472610B
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- hydroxide
- nitrogen
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- 239000000203 mixture Substances 0.000 title claims description 65
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- 238000000034 method Methods 0.000 claims description 16
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- 239000011574 phosphorus Substances 0.000 claims description 10
- 239000004094 surface-active agent Substances 0.000 claims description 10
- DFQPZDGUFQJANM-UHFFFAOYSA-M tetrabutylphosphanium;hydroxide Chemical group [OH-].CCCC[P+](CCCC)(CCCC)CCCC DFQPZDGUFQJANM-UHFFFAOYSA-M 0.000 claims description 10
- 239000002736 nonionic surfactant Substances 0.000 claims description 7
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012493 hydrazine sulfate Substances 0.000 description 1
- 229910000377 hydrazine sulfate Inorganic materials 0.000 description 1
- LAPRIVJANDLWOK-UHFFFAOYSA-N laureth-5 Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCO LAPRIVJANDLWOK-UHFFFAOYSA-N 0.000 description 1
- PYIDGJJWBIBVIA-UYTYNIKBSA-N lauryl glucoside Chemical compound CCCCCCCCCCCCO[C@@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O PYIDGJJWBIBVIA-UYTYNIKBSA-N 0.000 description 1
- 229940048848 lauryl glucoside Drugs 0.000 description 1
- 239000000787 lecithin Substances 0.000 description 1
- 235000010445 lecithin Nutrition 0.000 description 1
- 229940067606 lecithin Drugs 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-N methyl undecanoic acid Natural products CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NNKSAZWMTWKXLD-UHFFFAOYSA-N n-methyloctadecan-1-amine;hydrochloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[NH2+]C NNKSAZWMTWKXLD-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- WLGDAKIJYPIYLR-UHFFFAOYSA-M octane-1-sulfonate Chemical compound CCCCCCCCS([O-])(=O)=O WLGDAKIJYPIYLR-UHFFFAOYSA-M 0.000 description 1
- SMGTYJPMKXNQFY-UHFFFAOYSA-N octenidine dihydrochloride Chemical compound Cl.Cl.C1=CC(=NCCCCCCCC)C=CN1CCCCCCCCCCN1C=CC(=NCCCCCCCC)C=C1 SMGTYJPMKXNQFY-UHFFFAOYSA-N 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- HEGSGKPQLMEBJL-RKQHYHRCSA-N octyl beta-D-glucopyranoside Chemical compound CCCCCCCCO[C@@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O HEGSGKPQLMEBJL-RKQHYHRCSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229940055577 oleyl alcohol Drugs 0.000 description 1
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229950008882 polysorbate Drugs 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- RYYKJJJTJZKILX-UHFFFAOYSA-M sodium octadecanoate Chemical compound [Na+].CCCCCCCCCCCCCCCCCC([O-])=O RYYKJJJTJZKILX-UHFFFAOYSA-M 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 229940117986 sulfobetaine Drugs 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000003760 tallow Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OULAJFUGPPVRBK-UHFFFAOYSA-N tetratriacontyl alcohol Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCO OULAJFUGPPVRBK-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/361—Phosphonates, phosphinates or phosphonites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Detergent Compositions (AREA)
Description
本發明所揭示並主張之本發明概念係關於用於自物體之表面移除不期望顆粒及殘餘物之組合物及方法，且更具體而言係關於用於清潔化學機械拋光(CMP)後半導體晶圓或相關其他基板之半導體處理組合物及方法。組合物包括氫氧化鏻鹼(例如四丁基氫氧化鏻)，且在大量減少的缺陷數方面顯示令人驚奇的結果。
化學機械拋光(CMP)已成為用於半導體晶圓及其他相關基板(例如絕緣膜及金屬材料)之平坦化之主要方法。CMP證實已自小心地選擇之物理及化學組份觀察到明顯協同效應以確保晶圓之均勻拋光。對位於旋轉墊上之晶圓背部施加負載力，然後反向旋轉該墊(及晶圓)，同時將含有磨料(物理組份)及反應性化學品之漿液在該反向旋轉墊之下通過。
CMP之主要目的係跨越半導體晶圓或其他基板之整個表面獲得均勻及整體平坦化。對於半導體晶圓而言，該等晶圓可由許多小晶粒及圖案組成，該等圖案通常採取銅及氧化物(例如二氧化矽)之互聯線(亦稱為「互連件」)形式。在整個晶圓上達成均勻構形從而使得其完全平坦或為平面時(即，將互連物拋光至銅及二氧化矽線二者在同一位準之程度)，發生整體平坦化。
選擇磨料及化學品之漿液以同時與欲在平坦化期間自晶
圓移除之材料反應及/或使該材料弱化。金屬CMP(即銅CMP)中所使用之漿液通常係研磨顆粒(包含(但不限於)氧化鋁、二氧化矽、二氧化錳、氧化鈰、氧化鋯等)及氧化劑(例如(但不限於)硝酸鐵(III)、過氧化氫水溶液等)之組合。將胺及含氮化合物用於CMP製程並不罕見，然而已觀察到一旦或若該等化合物捕獲於半導體晶圓之互連件內(即造成抗蝕劑中毒(resist poisoning))，則其更易於造成製造缺陷。氮(即氮原子)及含氮化合物雜質可污染生產線且劣化或破壞晶圓自身之期望電特性。
因此，在可進一步處理晶圓之前需要有效且快速地移除CMP製程期間附著至基板上之雜質及顆粒。移除過程稱為CMP後清潔。當前CMP後清潔調配物使用含氮之鹼以調節清潔溶液之pH，該清潔溶液又可導致將不期望之胺及其他含氮化合物引入製造製程中，由此造成晶圓之抗蝕劑中毒。因此，需要存在有效地清潔來自半導體晶圓基板之CMP後殘餘物及顆粒且不將含氮化合物引入該晶圓表面上之無氮組合物(及方法)。
本發明所主張並揭示之本發明概念係關於用於清潔化學機械拋光後半導體晶圓或相關其他基板之半導體處理組合物及方法。組合物包括至少一種含磷之鹼及視情況至少一種表面活性劑。
產生本發明之主張並揭示之本發明概念中涵蓋改良之無氮半導體處理組合物，其包括至少一種含磷之鹼且可視情
況含有一或多種選自膦酸及/或表面活性劑(例如非離子型表面活性劑、陽離子型表面活性劑、陰離子型表面活性劑)之其他組份。
本發明之處理組合物尤其適用於CMP後清潔(即，在化學機械拋光後)，以自欲清潔之物體之表面(例如，自半導體晶圓之表面)移除CMP殘餘物。因此，CMP後清潔以自物體之表面移除CMP殘餘物之方法屬於本發明所主張並揭示之本發明概念，該方法包括以下步驟：(a)形成包括至少一種含磷之鹼之無氮處理組合物；及(b)使物體表面與處理組合物接觸，藉此自物體表面移除主要(即重大)部分之CMP殘餘物。
本文所主張並揭示之本發明概念係關於且定義用於清潔化學機械拋光後半導體晶圓或相關其他基板之改良半導體處理組合物及方法。組合物包括(i)至少一種含磷之鹼及視情況(ii)至少一種表面活性劑。較佳地，組合物無氮且展現負ζ電位。
術語「無氮」在本文中用於意指組合物不含有含氮之酸、含氮之鹼或任何將氮原子引入調配物中之其他組份或化合物。
術語「ζ電位」在本文中用於意指包括處理組合物之膠體系統之電動電位。本文所涵蓋類型之膠體系統亦包括用於CMP漿液之典型研磨顆粒。ζ電位係處理組合物(即，分散介質)與附著至研磨顆粒或晶圓表面之流體之靜止層之
間之電位差。ζ電位表明一或多個相似帶電顆粒與浸入清潔組合物之晶圓之表面之間之排斥程度。據信且觀察支持以下結論：可藉由ζ電位預測處理組合物之顆粒/殘餘物移除性能。例如，已發現具有負ζ電位與膠質二氧化矽之處理組合物展現自基板之實例性顆粒/殘餘物移除。對於最佳結果而言，處理組合物之負ζ電位較佳係在約-80毫伏(mV)至約-30毫伏(mV)之範圍內，但此範圍可向上或向下變化，只要變化不會有損於達成最佳顆粒/殘餘物移除即可。如上所述，ζ電位表明一或多個鄰近相似帶電顆粒與分散液中之晶圓表面之間之排斥程度。此外，若ζ電位高於-10毫伏(mV)，則研磨顆粒易於彼此聚集及/或附著至基板表面，此使得更難以移除該等研磨顆粒。若ζ電位低於-10毫伏(mV)、較佳-30毫伏(mV)，則研磨顆粒通常在分散相中穩定。
本發明之半導體處理組合物或調配物含有至少一種含磷之鹼，例如(舉例而言但不限於)氫氧化鏻鹼。如上所述，組合物亦可含有一或多種選自膦酸之額外組份，已顯示其係金屬離子之優良螯合劑(因此促進自基板移除金屬離子)。摻和有膦酸之氫氧化鏻鹼未將氮原子引入調配物中，因此維持極合意之無氮環境及調配物。儘管多種不同膦酸可適於完成本發明所揭示並主張之本發明概念之目的，但用於處理組合物中之較佳膦酸係「1-羥基亞乙基-1,1-二膦酸(HEDP)」。氫氧化鏻鹼(及同樣地，膦酸)用於調節處理組合物/調配物之pH。儘管多種含磷之鹼可用於完
成此目的，但較佳含磷之鹼係氫氧化鏻，且對於始終令人滿意之性能而言，甚至更佳係四丁基氫氧化鏻。
表面活性劑增強處理組合物之潤濕特性(即，一或多種表面活性劑之存在降低處理組合物之表面張力，其繼而使處理組合物更容易地分散在整個物體或基板表面上)。此外，非離子型表面活性劑於較高濃度下通常起清潔劑膠束作用。因此，與非離子型表面活性劑有關之潤濕特性及洗滌劑膠束形成增加處理組合物自物體/基板(例如，自半導體晶圓表面)移除殘餘物/顆粒之能力。適用於本文所闡述之處理組合物之非離子型表面活性劑包含(但不限於)聚乙二醇、烷基多糖苷(即，由Dow Chemical公司製造之Triton BG-10及Triton CG-110表面活性劑)、辛基苯酚乙氧基化物(即，由Dow Chemical公司製造之Triton X-114)、矽烷聚環氧烷(共聚物)(即，由Momentive Performance Materials製造之Y-17112-SGS樣品)、壬基苯酚乙氧基化物(即，由Dow Chemical公司製造之Tergitol NP-12)、Silwet® HS-312(由Momentive Performance Materials製造)及三苯乙烯基苯酚乙氧基化物(即，由Stepan公司製造之MAKON TSP-20)、聚氧乙烯烷基醚、聚氧乙烯烷基苯基醚、烷基烯丙基甲醛縮合聚氧乙烯醚、聚氧乙烯聚氧丙烯嵌段聚合物、聚氧乙烯聚氧丙烯烷基醚、甘油酯之聚氧乙烯醚、山梨醇酐酯之聚氧乙烯醚及山梨醇酯之聚氧乙烯醚、聚乙二醇脂肪酸酯、甘油酯、聚甘油酯、山梨醇酐酯、丙二醇酯、蔗糖酯、脂族酸烷醇醯胺、聚氧乙烯脂肪酸醯胺、聚氧乙烯烷
基醯胺、諸如TRITON® X-114、X-102、X-100、X-45、X-15、BG-10、CG-119等壬基苯酚乙氧基化物、諸如BRIJ® 56(C16
H33
(OCH2
CH2
)10
OH)、BRIJ® 58(C16
H33
(OCH2
CH2
)20
OH)、BRIJ® 35(C12
H25
(OCH2
CH2
)23
OH)等醇乙氧基化物、醇(一級及二級)乙氧基化物、胺乙氧基化物、葡萄糖苷、葡萄糖醯胺、聚乙二醇、聚(乙二醇-共-丙二醇)、十六烷醇、十八醇、十八醇十六醇混合物(主要由十六烷醇及十八醇組成)、油醇、八乙二醇單十二烷基醚、五乙二醇單十二烷基醚、聚氧丙二醇烷基醚、癸基葡萄糖苷、月桂基葡萄糖苷、辛基葡萄糖苷、聚氧乙烯二醇辛基苯酚醚、壬苯醇醚-9、甘油烷基酯、月桂酸甘油酯、聚氧乙烯二醇山梨醇酐烷基酯：聚山梨酸酯；山梨醇酐烷基酯、司盤類(span)、椰油醯胺MEA、椰油醯胺DEA、十二烷基二甲基胺氧化物、諸如Silwet® HS-312、Y-17112-SGS(由Momentive Performance Materials製造)等聚乙二醇、聚丙二醇及矽烷聚環氧烷(共聚物)之嵌段共聚物或其組合及混合物。
適用於本文所闡述之CMP後處理組合物之陰離子型表面活性劑包含(但不限於)烷基苯磺酸及其鹽，例如十二烷基苯磺酸及十二烷基苯磺酸銨；烷基萘磺酸及其鹽，例如丙基萘磺酸及三異丙基萘磺酸；烷基苯基醚二磺酸，例如十二烷基苯基醚二磺酸、烷基二苯基醚磺酸及其鹽；烷基二苯基醚二磺酸及其鹽，例如十二烷基二苯基醚二磺酸及十二烷基二苯基醚磺酸銨；苯酚磺酸-福爾馬林(formalin)縮
合物及其鹽；芳基苯酚磺酸-福爾馬林縮合物及其鹽；羧酸鹽，例如癸烷甲酸、N-醯基胺基酸鹽、聚氧乙烯或聚氧丙烯烷基醚羧酸鹽；醯化肽；磺酸鹽；硫酸酯鹽，例如硫酸化油、烷基硫酸鹽、烷基醚硫酸鹽、聚氧乙烯或聚氧丙烯烷基烯丙基醚硫酸鹽、烷基醯胺硫酸鹽、磷酸酯鹽；烷基磷酸鹽；及聚氧乙烯或聚氧丙烯烷基烯丙基醚磷酸鹽；月桂基硫酸銨；月桂基硫酸鈉(SDS，十二烷基硫酸鈉)；月桂醇醚硫酸鈉，亦稱為月桂基醚硫酸鈉(SLES)；肉豆蔻醇聚醚硫酸鈉；二辛基磺基琥珀酸鈉；辛烷磺酸鹽；全氟辛烷磺酸鹽(PFOS)；全氟丁烷磺酸鹽；烷基苯磺酸鹽；烷基芳基醚磷酸鹽；烷基醚磷酸鹽；烷基甲酸鹽；脂肪酸鹽(肥皂)；硬脂酸鈉；月桂醯基肌胺酸鈉；全氟壬酸鹽；全氟辛酸鹽及其混合物。
適用於本文所闡述之CMP後處理組合物之陽離子型表面活性劑包含(但不限於)奧替尼啶(octenidine)二鹽酸鹽、烷基三甲基銨鹽、十六烷基三甲基溴化銨(CTAB)、十六烷基三甲基溴化銨、十六烷基三甲基氯化銨(CTAC)、氯化十六烷基吡啶(CPC)、聚乙氧基化牛脂胺(POEA)、氯化苯甲烴銨(benzalkonium chloride)(BAC)、氯化苯銨松寧(benzethonium chloride)(BZT)、5-溴-5-硝基-1,3-二噁烷、二甲基二(十八烷基)氯化銨、二(十八烷基)二甲基溴化銨(DODAB)、脂族胺鹽；脂族四級銨鹽；氯化苯甲烴銨鹽；吡啶鎓鹽及咪唑啉鎓鹽、兩性表面活性劑羧基甜菜鹼型、磺基甜菜鹼型、胺基羧酸鹽、咪唑啉甜菜鹼、卵磷脂、烷
基氧化胺及其混合物。
如上所述，本發明之半導體處理組合物尤其適於CMP後清潔(即，在化學機械拋光後)以自半導體晶圓之表面移除CMP殘餘物。因此，本發明所主張並揭示之本發明概念中涵蓋CMP後清潔以自物體之表面移除CMP殘餘物之方法，該方法包括以下步驟：(a)形成無氮處理組合物，其包括：(i)至少一種含磷之鹼及視情況(ii)至少一種非離子型表面活性劑，其中該組合物最佳(但不必需)展現負ζ電位，及(b)使物體表面與處理組合物接觸以自物體表面移除至少一部分CMP殘餘物。
用於拋光測試之組份材料及用於以下實驗調配物A至O之化學品係自下文所示來源獲得。
拋光墊：Rohm及Haas EU4000
漿液：DuPont Air Products及Nanomaterials CoppeReady® 4366
200 mm矽晶圓上之毯覆式Cu膜：SVTC Technologies L.L.C.
1-羥基亞乙基-1,1-二膦酸(HEDP)之60%水溶液：Thermophos Japan.
四甲基氫氧化銨(TMAH)之25%水溶液：SACHEM公司。
四丁基氫氧化鏻(TBPH)之40%水溶液：Tokyo Chemical Industry有限公司。
Triton BG10、Triton X114及Triton X100：Dow
Chemical公司
PEG(C13EO10)、聚側氧基乙烯(10)十三烷基醚：Sigma-Aldrich公司
拋光實驗係在具有標準拋光配方之Applied Mirra 200 mm CMP工具上實施，彼等熟習此項技術者熟知該等配方之類型。在每一拋光實驗之前使用金剛石砂墊調節器調節拋光墊。拋光後，在具有標準清潔配方之Lam Ontrak清潔工具上使用PVA清潔刷實施CMP後清潔實驗。實驗調配物呈現於表1、2及3中。
然後在KLA-Tencor Surfscan SP1上掃描晶圓。使用0.15 μm之臨限值設置SP1配方用於表徵CMP後清潔之晶圓之缺陷率。缺陷率數值亦顯示於圖1、2及3中。
含有四丁基氫氧化鏻(TBPH)之調配物不含有任何氮化合物，且參考圖1，該等調配物展現低於習用TMAH調配物之缺陷計數。
調配物G、H及I表明TBPH與多種不同表面活性劑(例如Triton X114、PEG及Triton X100)一起起作用。
調配物J至O表明TBPH在寬範圍之pH值中起作用。
儘管已出於清晰及理解之目的藉助圖解說明及實例詳細闡述前述本發明概念，但彼等熟習此項技術者將瞭解且明瞭可在不背離如本說明書中闡述之精神及其範疇下實踐某些變化及修改。
圖1、2及3係對應於以上實例中之實驗調配物A至O之總缺陷計數之圖。
Claims (10)
- 一種CMP後清潔組合物，其不含氮原子且包括至少一種氫氧化鏻之鹼。
- 如請求項1之CMP後清潔組合物，其進一步包括至少一種表面活性劑。
- 如請求項1或2之組合物，其展現-80毫伏至約-10毫伏之範圍內之負ζ電位。
- 如請求項1或2之組合物，其中該氫氧化鏻係烷基氫氧化鏻。
- 如請求項4之組合物，其中該氫氧化鏻係四丁基氫氧化鏻。
- 如請求項2之組合物，其中該表面活性劑係非離子型表面活性劑。
- 一種用於清潔化學機械拋光後半導體晶圓以自該晶圓表面移除CMP殘餘物之方法，其包括以下步驟：(a)形成無氮處理組合物，其包括：至少一種含磷之鹼；及視情況至少一種表面活性劑，及(b)使該晶圓之該表面與該無氮處理組合物接觸，藉此自該晶圓之該表面移除至少一部分該CMP殘餘物。
- 如請求項7之方法，其中該組合物展現約-80毫伏至約-10毫伏範圍內之負ζ電位。
- 如請求項7或8之方法，其中該至少一種含磷之鹼係氫氧化鏻。
- 如請求項9之方法，其中該氫氧化鏻係四丁基氫氧化鏻且該表面活性劑係非離子型表面活性劑。
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| US13/214,920 US20130053291A1 (en) | 2011-08-22 | 2011-08-22 | Composition for cleaning substrates post-chemical mechanical polishing |
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| WO2015116679A1 (en) * | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
| JP6343160B2 (ja) * | 2014-03-28 | 2018-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR20170056631A (ko) * | 2014-09-18 | 2017-05-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 엔지니어링된 점성 유체를 이용한 고효율 ｃｍｐ 후 세정을 위한 방법 및 장치 |
| CN105529284A (zh) * | 2014-09-29 | 2016-04-27 | 盛美半导体设备（上海）有限公司 | 一种抛光及清洗晶圆的半导体设备及方法 |
| WO2016069576A1 (en) * | 2014-10-31 | 2016-05-06 | Entegris, Inc. | Non-amine post-cmp compositions and method of use |
| JP6728011B2 (ja) * | 2016-09-27 | 2020-07-22 | 株式会社ダイセル | Ｃｍｐ用研磨材組成物、及び該ｃｍｐ用研磨材組成物を使用した半導体デバイスの製造方法 |
| KR20210090294A (ko) * | 2017-01-18 | 2021-07-19 | 엔테그리스, 아이엔씨. | 표면으로부터 세리아 입자를 제거하기 위한 조성물 및 방법 |
| JP7299102B2 (ja) * | 2018-09-25 | 2023-06-27 | 株式会社フジミインコーポレーテッド | 中間原料、ならびにこれを用いた研磨用組成物および表面処理組成物 |
| US11060051B2 (en) | 2018-10-12 | 2021-07-13 | Fujimi Incorporated | Composition for rinsing or cleaning a surface with ceria particles adhered |
| US10640681B1 (en) * | 2018-10-20 | 2020-05-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for tungsten |
| WO2022070969A1 (ja) * | 2020-09-30 | 2022-04-07 | 株式会社フジミインコーポレーテッド | 酸化ガリウム基板用洗浄剤 |
| CN114989898B (zh) * | 2022-04-02 | 2023-10-20 | 三达奥克化学股份有限公司 | 一种研磨抛光残留物清洗液及其制备方法与应用 |
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| JP2004182773A (ja) * | 2002-11-29 | 2004-07-02 | Nec Electronics Corp | 疎水性基板洗浄用液体組成物 |
| US7985400B2 (en) * | 2004-01-26 | 2011-07-26 | Lummus Technology Inc. | Method for making mesoporous or combined mesoporous and microporous inorganic oxides |
| WO2006088737A2 (en) * | 2005-02-14 | 2006-08-24 | Small Robert J | Semiconductor cleaning |
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