TWI471953B - Liquid material filling method and device - Google Patents
Liquid material filling method and device Download PDFInfo
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- TWI471953B TWI471953B TW96145098A TW96145098A TWI471953B TW I471953 B TWI471953 B TW I471953B TW 96145098 A TW96145098 A TW 96145098A TW 96145098 A TW96145098 A TW 96145098A TW I471953 B TWI471953 B TW I471953B
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- 239000011344 liquid material Substances 0.000 title claims description 132
- 238000000034 method Methods 0.000 title claims description 68
- 239000000463 material Substances 0.000 claims description 122
- 239000000758 substrate Substances 0.000 claims description 88
- 238000003384 imaging method Methods 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 8
- 238000005286 illumination Methods 0.000 claims description 5
- 230000002950 deficient Effects 0.000 claims description 4
- 230000000153 supplemental effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 97
- 235000012431 wafers Nutrition 0.000 description 93
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 238000012360 testing method Methods 0.000 description 9
- 238000012544 monitoring process Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000013589 supplement Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
Description
本發明係關於一種利用毛細管現象朝基板與其上所保持之工件之空隙內，填充自吐出部吐出之液體材料之方法，尤其關於一種可於半導體封裝之底部填充步驟中恰當地填充液體材料之方法及裝置。The present invention relates to a method for filling a liquid material discharged from a discharge portion into a space between a substrate and a workpiece held thereon by capillary action, and more particularly to a method for properly filling a liquid material in an underfill step of a semiconductor package And equipment.
再者，本發明中所謂「吐出」，係包括液體材料離開吐出部前與工件接觸之型式之吐出方式、以及液體材料離開吐出部後與工件接觸之型式的吐出方式。In the present invention, the "discharge" includes a discharge method in which the liquid material comes into contact with the workpiece before leaving the discharge portion, and a discharge method in which the liquid material comes into contact with the workpiece after leaving the discharge portion.
如圖1所示，半導體封裝之構成如下，經由焊錫凸塊而使半導體晶片連接在基板上。於基板與半導體晶片之空隙中填充底部填充材料，可減小熱應力或來自外部之應力等之影響。As shown in FIG. 1, the semiconductor package is constructed such that a semiconductor wafer is connected to the substrate via solder bumps. Filling the gap between the substrate and the semiconductor wafer with an underfill material can reduce the effects of thermal stress or stress from the outside.
將底部填充材料填充至基板與半導體晶片之空隙的步驟，被稱作底部填充步驟。如圖2(a)至(c)所示，底部填充步驟係以如下方式進行：自位於半導體晶片之端部附近之吐出部供給底部填充材料，利用毛細管現象使樹脂填充至半導體晶片與基板之空隙後，藉由烘箱等進行加熱而使樹脂硬化。The step of filling the underfill material to the gap between the substrate and the semiconductor wafer is referred to as an underfill step. As shown in FIGS. 2(a) to (c), the underfilling step is performed by supplying an underfill material from a discharge portion located near an end portion of the semiconductor wafer, and filling the resin to the semiconductor wafer and the substrate by capillary action. After the voids, the resin is cured by heating in an oven or the like.
於底部填充步驟中，若半導體晶片與基板之空隙中殘留有氣泡，則進行加熱以使底部填充材料硬化時，殘留於空隙中之氣泡膨脹，會產生不良影響。因此，必需使氣泡不殘留、不進入上述空隙中。In the underfill step, if air bubbles remain in the gap between the semiconductor wafer and the substrate, heating is performed to cure the underfill material, and the bubbles remaining in the voids expand, which may adversely affect. Therefore, it is necessary to prevent the bubbles from remaining and not entering the above-mentioned voids.
若一邊使吐出部沿著半導體之全周移動一邊供給底部填充材料，則底部填充材料朝向半導體晶片之全周流動，因此，如圖3所示，於半導體晶片之中心殘留有未被排出之氣泡。When the underfill material is supplied while moving the discharge portion along the entire circumference of the semiconductor, the underfill material flows toward the entire circumference of the semiconductor wafer. Therefore, as shown in FIG. 3, bubbles that are not discharged remain in the center of the semiconductor wafer. .
因此，通常較多情況係藉由如圖2(a)至(c)所示之方式供給底部填充材料。圖2(a)表示使吐出部以相對於半導體晶片靜止的方式供給底部填充材料之方法，圖2(b)表示一邊使吐出部沿著半導體晶片之一邊移動一邊供給底部填充材料之方法，圖2(c)表示一邊使吐出部沿著半導體晶片之兩邊移動一邊供給底部填充材料之方法。Therefore, it is often the case that the underfill material is supplied by means as shown in Figs. 2(a) to (c). 2(a) shows a method of supplying the underfill material so that the discharge portion is stationary with respect to the semiconductor wafer, and FIG. 2(b) shows a method of supplying the underfill material while moving the discharge portion along one side of the semiconductor wafer. 2(c) shows a method of supplying an underfill material while moving the discharge portion along both sides of the semiconductor wafer.
根據如圖2(a)至(c)所示之方法，因底部填充材料於一個方向流向半導體晶片與基板之空隙，故半導體晶片與基板之空隙中的空氣，被底部填充材料擠壓而朝所供給之側的相反側排出，結果，可進行無氣泡殘留之填充。According to the method shown in FIGS. 2(a) to (c), since the underfill material flows into the gap between the semiconductor wafer and the substrate in one direction, the air in the gap between the semiconductor wafer and the substrate is pressed by the underfill material toward The opposite side to the side to be supplied is discharged, and as a result, filling without bubble remaining can be performed.
自吐出部供給之底部填充材料之量，係預先算出之填滿半導體晶片與基板之整個空隙的量。藉由供給上述量之底部填充材料，可獲得大部分半導體晶片中底部填充材料填滿半導體晶片與基板之整個空隙之良好結果。The amount of the underfill material supplied from the discharge portion is calculated in advance to fill the entire gap between the semiconductor wafer and the substrate. By supplying the above amount of underfill material, good results can be obtained in the majority of the semiconductor wafer in which the underfill material fills the entire gap between the semiconductor wafer and the substrate.
圖4(a)表示底部填充材料遍及半導體晶片與基板之整個空隙之狀態。如此，較佳為成為底部填充材料自半導體晶片緣部(周邊)少量滲出之狀態。Figure 4 (a) shows the state in which the underfill material extends over the entire gap between the semiconductor wafer and the substrate. Thus, it is preferable that the underfill material is oozing out from the edge (periphery) of the semiconductor wafer in a small amount.
然而，亦存在底部填充材料未遍及半導體晶片之整個周邊之情況，如此狀態之半導體封裝被判定為不良。圖4(b)係表示底部填充材料未遍及半導體晶片之整個周邊之狀態之圖。However, there is also a case where the underfill material does not extend over the entire periphery of the semiconductor wafer, and the semiconductor package in such a state is judged to be defective. Fig. 4(b) is a view showing a state in which the underfill material is not spread over the entire periphery of the semiconductor wafer.
於專利文獻1中揭示有如下方法，使載置有半導體晶片之基板傾斜，自上方側使底部填充材料流向半導體晶片與基板之空隙中，並藉由設置於下方側之監控相機，確認底部填充材料已到達下方，藉此確認底部填充材料已填滿。Patent Document 1 discloses a method of tilting a substrate on which a semiconductor wafer is placed, and flowing an underfill material into a space between the semiconductor wafer and the substrate from the upper side, and confirming the underfill by a monitoring camera provided on the lower side. The material has reached below to confirm that the underfill material is full.
於專利文獻2中揭示有如下之底部填充材料之填充方法，於樹脂塗佈裝置中，在本步驟之前進行整平，藉由CCD相機，測定殘留樹脂之面積(吐出前之面積S1)、與形成於噴嘴前端部之樹脂球之面積(吐出後之面積S2)，並根據所測定之吐出後之面積S2與吐出前之面積S1之差，來測定樹脂吐出量，上述樹脂塗佈裝置包括：閥式之分配器，於噴嘴之前端部形成樹脂球，並將該樹脂球轉印塗佈至基板上；影像辨識手段，具備拍攝部，該拍攝部拍攝附著於噴嘴前端部之樹脂；以及控制手段，根據所拍攝之影像資料，控制自噴嘴之樹脂吐出量。Patent Document 2 discloses a method of filling an underfill material, which is subjected to leveling before the step in the resin coating apparatus, and the area of the residual resin (area S1 before discharge) and the CCD camera are measured. The area of the resin ball formed at the tip end portion of the nozzle (the area S2 after the discharge), and the resin discharge amount is measured based on the difference between the measured area S2 after discharge and the area S1 before discharge. The resin coating apparatus includes: a valve type dispenser that forms a resin ball at a front end of the nozzle and transfers the resin ball onto the substrate; the image recognition means includes an imaging portion that captures resin attached to the front end portion of the nozzle; and controls Means, according to the image data taken, controls the amount of resin discharged from the nozzle.
(專利文獻1)日本專利特開2000－82715號公報(專利文獻2)日本專利特開2004－273541號公報(Patent Document 1) Japanese Patent Laid-Open Publication No. 2000-82715 (Patent Document 2) Japanese Patent Laid-Open Publication No. 2004-273541
然而，於專利文獻1中揭示之方法中，為了不產生底部填充材料之過剩供給，必需檢測底部填充材料到達另一端之瞬間。因此，吐出中必需即時解析監控相機之影像，判斷底部填充材料是否到達另一端，但該控制非常複雜。However, in the method disclosed in Patent Document 1, in order not to generate an excessive supply of the underfill material, it is necessary to detect the moment when the underfill material reaches the other end. Therefore, it is necessary to immediately analyze the image of the surveillance camera in the spout to determine whether the underfill material reaches the other end, but the control is very complicated.
又，於藉由監控相機確認已到達之時間點，半導體晶片與基板之空隙之底部填充材料之流動處於不穩定之狀態。即便確認已到達，且自吐出部之供給亦停止後，已供給之底部填充材料會流動。因此，無關於自吐出部之供給，存在底部填充材料自半導體晶片之周圍滲出之現象。此種現象尤其於黏度高之底部填充材料之情況(於半導體晶片與基板之空隙中流動慢之底部填充材料之情況)易於發生。Moreover, the flow of the underfill material in the gap between the semiconductor wafer and the substrate is in an unstable state at the time point when the monitoring camera confirms that it has arrived. Even if the confirmation has arrived and the supply from the spit is stopped, the supplied underfill material will flow. Therefore, there is a phenomenon in which the underfill material oozes from the periphery of the semiconductor wafer regardless of the supply from the discharge portion. This phenomenon is particularly likely to occur especially in the case of a highly viscous underfill material (in the case of a slow underfill material flowing in the gap between the semiconductor wafer and the substrate).
另一方面，即時確認底部填充材料之到達後，直至吐出部之實際吐出停止為止，存在時滯，由此導致過剩供給。該問題於底部填充材料之供給速度較快時易發生過剩供給，因此，考慮減慢供給速度來解決上述問題。然而，黏度低之底部填充材料因其流動性而難以減慢供給速度，又，亦存在因減慢供給速度而妨礙高速化之問題。On the other hand, immediately after the arrival of the underfill material is confirmed, there is a time lag until the actual discharge of the discharge portion is stopped, thereby causing excessive supply. This problem is likely to cause excessive supply when the supply speed of the underfill material is fast. Therefore, the above problem can be solved by considering the slowing down of the supply speed. However, the underfill material having a low viscosity is difficult to slow down the supply rate due to its fluidity, and there is also a problem that the speed of the supply is slowed down and the speed is hindered.
另外，於專利文獻1中揭示有如下內容，流入時使基板保持傾斜，確認到達後使其變為水平，藉由毛細管現象使自半導體晶片之相反側流出之底部填充材料返回，藉此進行良好之填充。然而，如此使基板傾斜之機構會導致生產設備變大。更進一步，必需進行對應各半導體晶片之填充而使基板傾斜．水平變化之步驟，因此需要花費額外時間，導致生產性變差。Further, Patent Document 1 discloses that the substrate is kept inclined at the time of inflow, and it is confirmed that the substrate is horizontal after the arrival, and the underfill material flowing out from the opposite side of the semiconductor wafer is returned by capillary action, thereby performing well. Filled. However, the mechanism for tilting the substrate in this way causes the production equipment to become large. Further, it is necessary to perform the filling of the respective semiconductor wafers to tilt the substrate. The step of horizontal change therefore requires extra time, resulting in poor productivity.
又，半導體晶片較多為小型者，因此必需使包含吐出部之吐出機構與監控相機接近配置。因此，吐出機構與監控相機之大小受到限制，又，吐出機構與監控相機之配置亦受到限制。Moreover, since many semiconductor wafers are small, it is necessary to arrange the discharge mechanism including the discharge unit in close proximity to the monitoring camera. Therefore, the size of the ejection mechanism and the monitoring camera is limited, and the configuration of the ejection mechanism and the monitoring camera is also limited.
本發明之目的在於解決如上所述之問題。即，本發明之目的在於提供一種裝置構成之自由度較高、且無需複雜控制即可供給適當量之液體材料之液體材料之填充方法及裝置。The object of the present invention is to solve the problems as described above. That is, an object of the present invention is to provide a filling method and apparatus for a liquid material which has a high degree of freedom in device configuration and which can supply an appropriate amount of liquid material without complicated control.
於一邊確認液體材料是否充分填充於基板與工件之空隙內，一邊供給液體材料之方法中，存在上述問題。因此，本發明者採用如下方法：供給所需量之液體材料，於填充於工件與基板之空隙後，確認填充狀態，並僅於填充為不良之情況，再之後進行補充。The above problem occurs in a method of supplying a liquid material while confirming whether or not the liquid material is sufficiently filled in the gap between the substrate and the workpiece. Therefore, the inventors of the present invention used a method of supplying a required amount of the liquid material, and filling the gap between the workpiece and the substrate, and confirming the filling state, and only filling the substrate, and then replenishing it.
即，第1發明係一種液體材料之填充方法，係利用毛細管現象，於基板與其上所保持之工件之空隙填充從吐出部吐出之液體材料的方法；其特徵在於包括：供給步驟，自吐出部朝工件之緣部供給液體材料；拍攝步驟，藉由拍攝手段，對假定上述供給步驟中所供給之液體材料藉由毛細管現象而滲出的區域之工件之緣部之影像進行拍攝；判定步驟，根據所拍攝之影像，檢測工件之緣部是否存在液體材料，由此判定液體材料是否填充於基板與工件之整個空隙；以及補充步驟，於判定為不良之情況，自吐出部朝上述工件之緣部供給液體材料。In other words, the first invention is a method for filling a liquid material, which is a method of filling a liquid material discharged from a discharge portion in a space between a substrate and a workpiece held thereon by a capillary phenomenon; and comprising: a supply step, a self-discharge portion Supplying the liquid material toward the edge of the workpiece; and in the photographing step, photographing the image of the edge of the workpiece in the region where the liquid material supplied in the supply step is exuded by the capillary phenomenon is photographed by the photographing means; the determining step is based on The captured image detects whether there is a liquid material at the edge of the workpiece, thereby determining whether the liquid material is filled in the entire gap between the substrate and the workpiece; and the replenishing step, in the case where the determination is bad, from the spout portion toward the edge of the workpiece Supply liquid material.
第2發明係如第1發明之液體材料之填充方法，其特徵在於，上述補充步驟係自與吐出部於上述供給步驟中所供給液體材料時之位置重疊的位置開始，供給液體材料。According to a second aspect of the invention, in the method of filling a liquid material according to the first aspect of the invention, the replenishing step is performed by supplying a liquid material from a position overlapping with a position at which the liquid material is supplied from the discharge unit in the supplying step.
換言之，自供給步驟中供給液體材料之側之緣部進行補充，可防止氣泡進入。即便於供給步驟中自已靜止之吐出部加以供給，於補充步驟中使吐出部稍微移動而供給之情況，亦可獲得相同之效果。In other words, the edge portion of the side where the liquid material is supplied from the supply step is replenished, and the entry of the air bubbles can be prevented. That is, it is easy to supply the self-supplied discharge portion in the supply step, and the same effect can be obtained by slightly moving the discharge portion and supplying it in the replenishing step.
第3發明係如第1發明之液體材料之填充方法，其特徵在於，上述補充步驟係使吐出部移動，而朝上述判定步驟中不存在液體材料的工件之緣部供給液體材料。According to a third aspect of the invention, in the method of filling a liquid material according to the first aspect of the present invention, in the replenishing step, the liquid material is supplied to the edge portion of the workpiece in which the liquid material is not present in the determining step.
第4發明係如第1至3發明中任一發明之液體材料之填充方法，其特徵在於，於上述工件為多邊形之情況下，上述拍攝步驟中對工件之角之緣部進行拍攝。According to a fourth aspect of the invention, in the method of filling a liquid material according to any one of the first to third aspects of the present invention, in the case where the workpiece is a polygon, the edge portion of the corner of the workpiece is imaged in the photographing step.
第5發明係如第4發明之液體材料之填充方法，其特徵在於，上述工件之角，係構成位於離供給步驟中吐出部之位置所屬之邊最遠位置的邊，且不構成位於吐出部之位置所屬之邊之1個以上之角。According to a fifth aspect of the invention, in the method of filling a liquid material according to the fourth aspect of the present invention, the corner of the workpiece is located at a side farthest from a side to which the discharge portion is located in the supply step, and does not constitute a discharge portion. One or more corners of the side to which the position belongs.
第6發明係如第1至5發明中任一發明之液體材料之填充方法，其特徵在於，上述判定步驟包括辨識步驟，該辨識步驟中根據所拍攝之影像來辨識自工件之緣部滲出之液體材料之量，且上述補充步驟中，供給根據上述判定步驟所辨識之滲出之液體材料的量而算出之補充量之液體材料。A method of filling a liquid material according to any one of the first to fifth aspects of the present invention, characterized in that the determining step includes an identifying step of discriminating from the edge of the workpiece based on the captured image. The amount of the liquid material, and in the above-described replenishing step, the replenishing amount of the liquid material calculated based on the amount of the oozing liquid material identified by the above-described determining step.
第7發明係如第6發明之液體材料之填充方法，其特徵在於，上述判定步驟，根據所拍攝之影像辨識自工件之緣部滲出之液體材料的寬度，並根據該寬度算出滲出之液體材料之補充量。According to a seventh aspect of the present invention, in the method of filling a liquid material according to the sixth aspect of the present invention, in the determining step, the width of the liquid material oozing from the edge of the workpiece is recognized based on the captured image, and the oozing liquid material is calculated based on the width. The amount of supplement.
第8發明係如第6發明之液體材料之填充方法，其特徵在於，上述判定步驟根據所拍攝之影像而辨識自工件之緣部滲出之液體材料的面積，並根據該面積算出滲出之液體材料之補充量。According to a sixth aspect of the invention, in the method of filling a liquid material according to the sixth aspect of the invention, the determining step identifies an area of the liquid material oozing from the edge of the workpiece based on the captured image, and calculates the oozing liquid material based on the area. The amount of supplement.
第9發明係如第6發明之液體材料之填充方法，其特徵在於，上述拍攝步驟係對工件之緣部之多個部位進行拍攝，上述判定步驟根據所拍攝之影像而檢測工件之緣部之多個部位是否存在液體材料，並根據不存在液體材料之部位之數來算出液體材料之補充量。According to a ninth aspect of the invention, in the method of filling a liquid material according to the sixth aspect of the invention, the image capturing step is performed by photographing a plurality of portions of a portion of the workpiece, and the determining step detects the edge portion of the workpiece based on the captured image. Whether there is a liquid material in a plurality of parts, and the amount of replenishment of the liquid material is calculated based on the number of parts where the liquid material is not present.
第10發明係如第1至8發明中任一發明之液體材料之填充方法，其特徵在於，上述拍攝步驟係對工件之緣部之多個部位進行拍攝，上述判定步驟根據所拍攝之影像確認工件之緣部之多個部位是否存在液體材料，於所有部位存在液體材料時判定為良好，於任一部位不存在液體材料時判定為不良。A method of filling a liquid material according to any one of the first to eighth aspects of the present invention, characterized in that, in the photographing step, a plurality of portions of a portion of the workpiece are photographed, and the determining step is confirmed based on the photographed image. Whether or not a liquid material exists in a plurality of portions of the edge portion of the workpiece is determined to be good when the liquid material is present in all the portions, and is judged to be defective when the liquid material is not present in any portion.
第11發明係如第1至10發明中任一發明之液體材料之填充方法，其特徵在於，上述基板具有對準標記，其具有對準步驟，該對準步驟於上述供給步驟之前，藉由拍攝手段拍攝基板之對準標記，且校正基板及/或基板上之工件之保持位置的偏移。The method of filling a liquid material according to any one of the first to tenth invention, wherein the substrate has an alignment mark having an alignment step before the supply step The photographing means photographs the alignment marks of the substrate and corrects the offset of the holding position of the workpiece on the substrate and/or the substrate.
第12發明係如第11發明之液體材料之填充方法，其特徵在於，上述對準步驟與上述拍攝步驟係使用同一拍攝手段。According to a twelfth aspect of the invention, in the method of filling a liquid material according to the eleventh aspect of the invention, the aligning step and the photographing step are performed by the same photographing means.
第13發明係如第1至12發明中任一發明之液體材料之填充方法，其特徵在於，於上述基板上保持有多個工件之情況下，對2個以上之工件實施供給步驟後，實施拍攝步驟至補充步驟。According to a thirteenth aspect of the present invention, in the method of filling a liquid material according to any one of the first to the twelfth aspect of the present invention, in the case where a plurality of workpieces are held on the substrate, a supply step is performed on two or more workpieces, and then Take the shooting step to the supplementary step.
第14發明係如第1至13發明中任一發明之液體材料之填充方法，其特徵在於，於上述基板上保持有多個工件之情況下，上述拍攝手段具有與吐出部相獨立之驅動手段，對基板上之所有工件完成供給步驟之前，開始對該基板上已完成供給步驟之工件實施拍攝步驟。A method of filling a liquid material according to any one of the first to thirteenth aspects of the present invention, characterized in that, in the case where a plurality of workpieces are held on the substrate, the photographing means has a driving means independent of the discharge portion Before the supply step is completed for all the workpieces on the substrate, the photographing step of the workpiece on the substrate on which the supply step has been completed is started.
第15發明係如第1至14發明中任一發明之液體材料之填充方法，其特徵在於，於上述拍攝步驟中，藉由與拍攝手段連設之由多個照射部構成之照明手段來照射工件之緣部而進行拍攝。A method of filling a liquid material according to any one of the first to fourteenth aspects of the present invention, characterized in that, in the photographing step, the illumination means comprising a plurality of irradiation sections connected to the imaging means is irradiated Shooting at the edge of the workpiece.
第16發明係一種吐出裝置，係包括：供給液體材料之液體材料供給部；具有吐出液體材料之吐出口之吐出部；使吐出部移動自如之驅動機構；拍攝手段；以及控制該等動作而吐出所需量之液體材料之控制部；如此所成之吐出裝置，其特徵在於：控制部具有實施第1至14發明中任一發明之液體材料之填充方法之程式。According to a sixteenth aspect of the invention, a discharge device includes: a liquid material supply unit that supplies a liquid material; a discharge unit that discharges a discharge material of the liquid material; a drive mechanism that moves the discharge unit; an imaging device; and controls the operation to discharge A control unit for a liquid material of a required amount; the discharge device as described above, characterized in that the control unit has a program for carrying out the filling method of the liquid material according to any one of the first to theteenth inventions.
第17發明係如第16發明之吐出裝置，其特徵在於，具備與上述拍攝手段連設之由多個照射部構成之照明手段。According to a seventeenth aspect of the invention, there is provided a discharge device according to the sixteenth aspect of the invention, characterized in that the illumination device comprises a plurality of illumination units connected to the imaging means.
再者，若例示本發明之吐出裝置吐出所需量之液體材料之具體構成，則揭示有如下：於氣壓式分配器之情況控制加壓空氣之壓力值與加壓時間，於管式之情況控制為了輸送試管內之液體而擠壓試管之構件的移動量及擠壓次數，於噴射式等噴射液滴之類型之情況控制吐出液滴之次數，於螺旋式之情況控制螺旋之旋轉量，於閥式之情況控制液體材料之施加壓力之大小與閥門部之開閉量及開閉時間等。Further, the specific configuration of the liquid material required to discharge the required amount of the discharge device of the present invention is as follows: the pressure value and the pressurization time of the pressurized air are controlled in the case of the pneumatic distributor, in the case of the tubular type. Controlling the amount of movement and the number of times of pressing the member for squeezing the test tube in order to transport the liquid in the test tube, controlling the number of times of discharging the liquid droplets in the case of the type of sprayed droplets, etc., and controlling the amount of rotation of the spiral in the case of a spiral type, In the case of the valve type, the magnitude of the applied pressure of the liquid material and the opening and closing amount of the valve portion, the opening and closing time, and the like are controlled.
根據本發明，在一連串之步驟中，無需複雜之控制即可供給適當量之液體材料，且可縮短判定時間。According to the present invention, in a series of steps, an appropriate amount of liquid material can be supplied without complicated control, and the determination time can be shortened.
又，無需接近配置吐出部與拍攝手段，且亦無需使基板傾斜之機構等，因此裝置構成簡化，且設計之自由度高。Moreover, since it is not necessary to approach the arrangement of the discharge unit and the imaging means, and the mechanism for tilting the substrate is not required, the device configuration is simplified, and the degree of freedom in design is high.
用以實施本發明之最佳形態，係關於一種可恰當地填充液體材料之方法及裝置。The best mode for carrying out the invention relates to a method and apparatus for properly filling a liquid material.
對基板1上所載置之工件，製作一個至多個圖案，並依照圖案吐出液體材料。例如，如圖2(a)所示，製作成為沿著作為方形工件之半導體晶片2之一邊之線的塗佈圖案，或如圖2(b)所示，製作成為沿著作為方形工件之半導體晶片2之兩邊之線的塗佈圖案。再者，工件並不限定於方形，亦可為圓形或多邊形。One or more patterns are formed on the workpiece placed on the substrate 1, and the liquid material is discharged in accordance with the pattern. For example, as shown in FIG. 2(a), a coating pattern which is a line along one side of the semiconductor wafer 2 which is a square workpiece is produced, or as shown in FIG. 2(b), a semiconductor which is a square workpiece is produced. A coating pattern of the lines on both sides of the wafer 2. Furthermore, the workpiece is not limited to a square shape, and may be a circle or a polygon.
本發明之較佳態樣之基板1具有如圖7所示之對準標記60。並且，最佳形態之本發明係一種液體材料之填充方法及具有實施該方法之程式之吐出裝置，該液體材料之填充方法之特徵在於包括：對準步驟，藉由拍攝手段對基板1之對準標記60進行拍攝，並校正基板1上之工件之保持位置的偏移；供給步驟，自吐出部6朝工件之緣部供給液體材料；拍攝步驟，藉由拍攝手段，對與上述供給步驟中之吐出部6之位置不重疊之工件之緣部的影像進行拍攝；判定步驟，根據所拍攝之影像判定液體材料是否存在於工件之緣部，藉此判定液體材料是否已填充於基板1與工件之整個空隙；以及補充步驟，於判定為不良之情況，朝上述工件之緣部供給液體材料。The substrate 1 of the preferred aspect of the invention has an alignment mark 60 as shown in FIG. Further, the present invention is a liquid material filling method and a discharge device having the program for carrying out the method, and the liquid material filling method is characterized by comprising: an alignment step of pairing the substrate 1 by a photographing means The quasi-mark 60 performs photographing and corrects the offset of the holding position of the workpiece on the substrate 1; the supplying step supplies the liquid material from the spout portion 6 toward the edge of the workpiece; and the photographing step is performed by the photographing means in the above-described supplying step The image of the edge of the workpiece that does not overlap at the position of the discharge portion 6 is imaged; and the determining step determines whether the liquid material is present at the edge of the workpiece based on the captured image, thereby determining whether the liquid material has been filled in the substrate 1 and the workpiece The entire gap and the replenishing step supply the liquid material to the edge of the workpiece when it is determined to be defective.
此處，供給步驟中所供給之液體材料之量為所需之量，該量係藉由預先計算或測試而決定。因此，並不會產生如檢測到液體材料到達工件之相反側後停止供給之習知方法般因時滯而導致之過剩供給。又，因供給預先決定之量之液體材料，故亦不會產生所填充之液體材料過度地過剩供給之情況。無需使自工件之相反側流出之液體材料返回，因此亦無需設置使基板傾斜之機構。Here, the amount of the liquid material supplied in the supply step is a desired amount, which is determined by calculation or testing in advance. Therefore, excessive supply due to time lag such as the detection of the liquid material reaching the opposite side of the workpiece and stopping the supply is not caused. Further, since a predetermined amount of the liquid material is supplied, there is no possibility that the filled liquid material is excessively excessively supplied. There is no need to return the liquid material flowing out from the opposite side of the workpiece, so there is no need to provide a mechanism for tilting the substrate.
又，根據本發明，無需為了防止過剩供給而限制液體材料之供給速度，因此可提高供給速度。Moreover, according to the present invention, it is not necessary to limit the supply speed of the liquid material in order to prevent excessive supply, so that the supply speed can be increased.
於拍攝步驟中，藉由拍攝手段，獲取為了判定工件之緣部是否存在液體材料而所需之影像資料。於拍攝步驟中，對與供給步驟中吐出部6供給液體材料時之位置不重疊之位置，就1個至多個部位進行拍攝。In the photographing step, the image data required to determine whether or not the liquid material is present at the edge of the workpiece is obtained by the photographing means. In the imaging step, one or more portions are imaged at positions that do not overlap with the position at which the liquid material is supplied from the discharge portion 6 in the supply step.
此處，既能以工件之端部為中心進行拍攝，亦能以遠離工件之端部之部位為中心進行拍攝。於後者之情況，可確認液體距離工件固定距離，根據該情況判定液體材料之量為充分，且可判定能以高機率適當地填充於其他部位(即，液體材料填充於工件與基板1之整個區域)。Here, it is possible to take a picture centering on the end of the workpiece, and to take a picture centering on the end portion away from the workpiece. In the latter case, it can be confirmed that the liquid is at a fixed distance from the workpiece, and the amount of the liquid material is determined to be sufficient according to the case, and it can be judged that the liquid material can be appropriately filled in other portions with a high probability (that is, the liquid material is filled in the entire workpiece and the substrate 1). region).
再者，藉由拍攝手段而獲得之影像資料，可用於判定是否自工件滲出必要以上之液體材料，或者亦可用於判定自工件滲出之液體材料是否附著於工件之表面。Furthermore, the image data obtained by the photographing means can be used to determine whether or not the liquid material necessary for oozing out from the workpiece, or can be used to determine whether the liquid material oozing out from the workpiece adheres to the surface of the workpiece.
又，藉由未同時對同一工件實施供給步驟及拍攝步驟，可調整自供給步驟結束後至拍攝步驟開始為止之時間。例如，於所供給之液體材料到達工件與基板之空隙花費時間之情況下，可適當地調整拍攝步驟之開始時間。即，藉由於液體材料之流動穩定後進行拍攝．判定，無關自吐出部之供給，均可防止液體材料滲出之現象。Further, by not performing the supply step and the photographing step for the same workpiece at the same time, the time from the end of the supply step to the start of the photographing step can be adjusted. For example, in the case where it takes time for the supplied liquid material to reach the gap between the workpiece and the substrate, the start time of the photographing step can be appropriately adjusted. That is, the photographing is performed by the flow of the liquid material being stabilized. It is judged that the supply of the liquid material can be prevented regardless of the supply of the discharge portion.
於基板1上保持多個工件之情況，較佳為對2個以上之工件實施供給步驟後，再實施拍攝步驟至補充步驟。In the case where a plurality of workpieces are held on the substrate 1, it is preferable to carry out the supply step to the two or more workpieces, and then perform the photographing step to the replenishing step.
對經供給步驟後之工件實施拍攝步驟之前，實施其他工件之供給步驟，藉此可有效活用直至液體材料之流動穩定為止之等待時間。Before the photographing step is performed on the workpiece after the supply step, the supply step of the other workpieces is performed, whereby the waiting time until the flow of the liquid material is stabilized can be effectively utilized.
又，本發明者根據經驗規則，發現於大致四邊形等多邊形之工件中，液體材料難以填滿之處，係位於供給步驟中之吐出部之位置至離吐出圖案最遠之角部，因此若液體材料到達該角部，則液體材料可以高機率填滿工件與基板1之整個空隙。並且，根據積極研究之結果，發明了藉由對角部進行判定，而以少量判定部位來有效地判定液體材料是否良好填充之方法。Further, according to the rule of thumb, the inventors found that in a workpiece having a substantially quadrangular polygonal shape, where the liquid material is difficult to fill, it is located at the position of the discharge portion in the supply step to the corner portion farthest from the discharge pattern, and therefore, if the liquid When the material reaches the corner, the liquid material can fill the entire gap between the workpiece and the substrate 1 with a high probability. Further, based on the results of active research, a method of effectively determining whether or not the liquid material is well filled with a small number of determination points by the determination of the diagonal portion has been invented.
若以具體例進行說明則如下所示，於工件為大致三角形之情況，沿著其1邊吐出液體材料時，對離該1邊最遠之1個角進行判定即可，於工件為大致四邊形之情況，沿著其1邊吐出液體材料時，對離該1邊最遠之2個角(即，構成與該1邊對向之1邊之2個角)進行判定即可，而於沿著鄰接之2邊吐出液體材料時，對離該2邊最遠之1個角(即，與該2邊相交之角對向之角)進行判定即可。In the case of a specific example, when the workpiece is substantially triangular, when the liquid material is discharged along one side, the angle farthest from the one side may be determined, and the workpiece is substantially quadrangular. In the case where the liquid material is discharged along one side, the two corners farthest from the one side (that is, two corners constituting one side opposite to the one side) may be determined, and When the liquid material is discharged by the adjacent two sides, it is sufficient to determine the angle which is the farthest from the two sides (that is, the angle at which the angle intersects with the two sides).
於工件為大致五邊形之情況，沿著鄰接之2邊吐出液體材料時，對離該2邊最遠之構成1邊之2個角進行判定即可，沿著鄰接之3邊吐出液體材料時，對離該3邊最遠之1個角進行判定即可。When the workpiece is substantially pentagonal, when the liquid material is discharged along the adjacent two sides, the two corners of the one side farthest from the two sides may be determined, and the liquid material is discharged along the adjacent three sides. In this case, it is sufficient to judge one corner that is the farthest from the three sides.
於工件為大致六邊形之情況，沿著鄰接之2邊吐出液體材料時，對距離該2邊最遠之構成2邊之3個角進行判定即可，沿著鄰接之3邊吐出液體材料時，對距離該3邊最遠之構成1邊之2個角進行判定即可。When the workpiece is substantially hexagonal, when the liquid material is discharged along the adjacent two sides, the three corners of the two sides which are the farthest from the two sides are determined, and the liquid material is discharged along the adjacent three sides. In this case, it is sufficient to determine two corners of one side which are the farthest from the three sides.
於工件為大致正八邊形之情況時，沿著鄰接之3邊吐出液體材料時，對離該3邊最遠之構成1邊之2個角(在要求高精度之情況時，對構成位於對向位置之3邊之4個角)進行判定即可，沿著鄰接之4邊吐出液體材料時，對離該4邊最遠之構成2邊之3個角進行判定即可。When the workpiece is a substantially regular octagon, when the liquid material is discharged along the adjacent three sides, the two corners that are the farthest from the three sides are formed (when high precision is required, the pair is located in the pair) It is sufficient to determine the four corners of the three sides of the position. When the liquid material is discharged along the adjacent four sides, it is sufficient to determine three corners of the two sides which are the farthest from the four sides.
以下根據實施例，對底部填充步驟中之本發明之詳細內容加以說明，但本發明絲毫不受該等實施例限制。The details of the invention in the underfill step are described below in accordance with the examples, but the invention is not limited by the examples.
圖5表示本實施例之吐出裝置之概略側視圖。圖5中，將圖紙之橫向設為X方向，將與圖紙垂直之方向設為Y方向，並將圖紙之縱向設為Z方向。Fig. 5 is a schematic side view showing the discharge device of the present embodiment. In Fig. 5, the horizontal direction of the drawing is set to the X direction, the direction perpendicular to the drawing is set to the Y direction, and the vertical direction of the drawing is set to the Z direction.
以下對本實施例之吐出裝置之構成及動作加以說明。The configuration and operation of the discharge device of the present embodiment will be described below.
《構成》大致為筒狀之注射器7中，內部儲存底部填充材料5。於注射器7之下方端部，連通直徑小於注射器7之吐出部(噴嘴)6，且於注射器7之相反側之端部連通空氣試管13。In the syringe 7 in which the constitution is substantially cylindrical, the underfill material 5 is stored inside. At the lower end of the syringe 7, the communication portion is smaller than the discharge portion (nozzle) 6 of the syringe 7, and the end portion on the opposite side of the syringe 7 communicates with the air tube 13.
空氣試管13連接分配器14，且經由空氣試管13朝注射器7中供給加壓空氣。分配器14可以設定加壓空氣之壓力所設定之時間進行供給。The air test tube 13 is connected to the dispenser 14 and supplies pressurized air to the syringe 7 via the air test tube 13. The dispenser 14 can be supplied with a set time set by the pressure of the pressurized air.
注射器7藉由注射器座8而被固定於Z平台9上。Z平台9設置為藉由Z方向移動機構19而可於Z軸方向上移動。The syringe 7 is fixed to the Z platform 9 by the syringe holder 8. The Z stage 9 is provided to be movable in the Z-axis direction by the Z-direction moving mechanism 19.
Z方向移動機構19被固定於頂座15上。Z方向移動機構19包括具有未圖示之馬達之驅動手段、藉由馬達而旋轉之滾珠螺桿以及導軸，藉由驅動馬達，可使Z軸平台於Z方向上移動。The Z-direction moving mechanism 19 is fixed to the top seat 15. The Z-direction moving mechanism 19 includes a driving means for a motor (not shown), a ball screw that rotates by a motor, and a guide shaft, and the Z-axis stage is moved in the Z direction by a drive motor.
於頂座15上除了設置有Z方向移動機構19外，亦設置有藉由相機支架41而保持之筒狀之相機40。相機40連接於影像辨識部31，且相機40所拍攝之影像資料被傳送至影像辨識部31。In addition to the Z-direction moving mechanism 19, a top camera 15 is also provided on the top seat 15 by a camera holder 41. The camera 40 is connected to the image recognition unit 31, and the image data captured by the camera 40 is transmitted to the image recognition unit 31.
於相機40上，以包圍其前端部之方式設置有照射手段20。如圖6所示，照射手段20具有多個進行光照射之照射部21。本實施例之裝置中，照射部21以相機40為中心，於圓周方向上以等間隔而三重排列設置。如此，以相機40為中心，以均等亮度進行光照射，藉此可使對比度清晰，而良好地進行影像辨識。The irradiation means 20 is provided on the camera 40 so as to surround the front end portion thereof. As shown in FIG. 6, the irradiation means 20 has a plurality of irradiation sections 21 that perform light irradiation. In the apparatus of the present embodiment, the illuminating unit 21 is arranged in a three-fold arrangement at equal intervals in the circumferential direction around the camera 40. In this manner, light irradiation is performed with equal brightness around the camera 40, whereby the contrast can be made clear and the image recognition can be performed satisfactorily.
光纖之一端連接各照射部21，該等光纖形成束而構成光纜，並與設置於照射手段20之相反側之光源連接。光源之光經由光纜而自照射部21射出。再者，照射手段20亦可藉由LED(light－emitting diode，發光二極體)等習知照射手段而構成。One end of the optical fiber is connected to each of the illuminating units 21, and the optical fibers form a bundle to form an optical cable, and are connected to a light source provided on the opposite side of the illuminating means 20. The light of the light source is emitted from the irradiation unit 21 via the optical cable. Further, the irradiation means 20 may be constituted by a known irradiation means such as an LED (light-emitting diode).
於頂座15之下方設置有搬送軌道17，其搬送進行底部填充之基板1。頂座15構成為如下，藉由未圖示之習知XY方向移動機構18使載置於搬送軌道17上之基板1於XY方向上自如移動。A conveyance rail 17 is provided below the top seat 15, and the substrate 1 for underfilling is conveyed. The top seat 15 is configured such that the substrate 1 placed on the transport rail 17 is freely movable in the XY direction by a conventional XY direction moving mechanism 18 (not shown).
於基板1上，經由焊錫凸塊4而載置有俯視為正方形之半導體晶片2。如圖7所示，基板1上，於角部附近具有2個對準標記α、β。對準標記用於校正填充作業時基板1之偏移。A semiconductor wafer 2 having a square shape in plan view is placed on the substrate 1 via the solder bumps 4. As shown in FIG. 7, the substrate 1 has two alignment marks α and β in the vicinity of the corner. The alignment mark is used to correct the offset of the substrate 1 during the filling operation.
再者，同樣亦可於工件上設置對準標記，來校正基板1上之工件之保持位置之偏移。Further, an alignment mark may be provided on the workpiece to correct the offset of the holding position of the workpiece on the substrate 1.
《動作》參照圖7、圖8對動作加以說明。<<Operation>> The operation will be described with reference to Figs. 7 and 8 .
1)對準步驟於之前之步驟中，在進行底部填充材料5之填充作業的基板1上載置半導體晶片2。此處，半導體晶片2相對於對準標記α、β配置於相同位置上。又，因經由焊錫凸塊4而載置，故基板1與半導體晶片2之間存在空隙。1) Alignment Step In the previous step, the semiconductor wafer 2 is placed on the substrate 1 on which the underfill material 5 is filled. Here, the semiconductor wafer 2 is disposed at the same position with respect to the alignment marks α and β. Moreover, since it is placed via the solder bumps 4, there is a gap between the substrate 1 and the semiconductor wafer 2.
基板1藉由搬送軌道17上所設置之未圖示之搬送帶，於搬送軌道17上移動，並停止在搬送軌道17上之作業位置。停止後，藉由未圖示之保持手段3而保持基板1，使位置不會偏移。The substrate 1 is moved on the conveyance rail 17 by a conveyance belt (not shown) provided on the conveyance rail 17, and the work position on the conveyance rail 17 is stopped. After the stop, the substrate 1 is held by the holding means 3 (not shown) so that the position is not shifted.
保持手段3所保持之基板1於XY方向之位置，對應基板1偏移，而並非全部為相同位置。該位置之偏移對底部填充材料5之填充有良好或不良之影響。其原因在於半導體晶片2與吐出部6之位置關係不同。因此，必需進行校正每個基板1之偏移之對準步驟。The position of the substrate 1 held by the holding means 3 in the XY direction is shifted by the corresponding substrate 1, and not all of them are the same position. The offset of this position has a good or bad effect on the filling of the underfill material 5. The reason for this is that the positional relationship between the semiconductor wafer 2 and the discharge portion 6 is different. Therefore, it is necessary to perform an alignment step of correcting the offset of each of the substrates 1.
以如下方式進行對準步驟。The alignment step is performed in the following manner.
首先，使相機40移動至對準標記α之上方，並拍攝對準標記α。將影像上之對準標記α之位置記憶為XY方向移動機構18之座標值α。同樣，拍攝對準標記β。將影像上之對準標記α之位置記憶為XY方向移動機構18之座標值β。此處，相機40之移動係藉由XY方向移動機構18對應頂座15而移動。First, the camera 40 is moved above the alignment mark α, and the alignment mark α is photographed. The position of the alignment mark α on the image is memorized as the coordinate value α of the XY direction moving mechanism 18. Also, the alignment mark β is taken. The position of the alignment mark α on the image is memorized as the coordinate value β of the XY direction moving mechanism 18. Here, the movement of the camera 40 is moved by the XY-direction moving mechanism 18 corresponding to the top seat 15.
半導體晶片2相對於對準標記α、β設置於相同位置上。因此，根據座標值α、β及影像上之對準標記α、β之位置資訊，求出於填充底部填充材料5時吐出部6之位置，算出並記憶該位置之XY方向移動機構18之座標。此處，於本實施例中，吐出部6於基板1上係以A→B→C之路徑移動，進行底部填充材料5之填充，因此必需求出相當於A→B→C之路徑的XY方向移動機構18之座標值。藉由實施對準步驟，消除基板1之位置偏移之影響。The semiconductor wafer 2 is disposed at the same position with respect to the alignment marks α, β. Therefore, based on the coordinate values α, β and the positional information of the alignment marks α and β on the image, the position of the discharge portion 6 when the underfill material 5 is filled is calculated, and the coordinates of the XY-direction moving mechanism 18 at the position are calculated and memorized. . Here, in the present embodiment, the discharge portion 6 is moved on the substrate 1 by the path of A→B→C, and the underfill material 5 is filled. Therefore, it is necessary to obtain the XY corresponding to the path of A→B→C. The coordinate value of the direction moving mechanism 18. The effect of the positional shift of the substrate 1 is eliminated by performing the alignment step.
2)供給步驟首先，以吐出部6之前端位於基板1上之A部位之正上方之方式，藉由XY方向移動機構18使吐出部6移動，且以吐出部6之前端位於所需之高度之方式，藉由Z軸移動機構19調整高度。2) Supply step First, the discharge portion 6 is moved by the XY direction moving mechanism 18 so that the front end of the discharge portion 6 is located directly above the A portion on the substrate 1, and the front end of the discharge portion 6 is at the desired height. In this manner, the height is adjusted by the Z-axis moving mechanism 19.
一邊自分配器14經由空氣試管13朝注射器7內供給所需之壓力之加壓空氣，一邊使吐出部6於基板1上之A→B→C之路徑上移動，藉此供給底部填充材料5(參照圖7)。於吐出部6移動至C部位後，停止自分配器14供給加壓空氣，結束底部填充材料5之供給。藉由Z軸移動機構19使吐出部6朝上方移動。While supplying the pressurized air of a desired pressure from the dispenser 14 to the syringe 7 via the air test tube 13, the discharge portion 6 is moved over the path of A→B→C on the substrate 1, thereby supplying the underfill material 5 ( Refer to Figure 7). After the discharge portion 6 is moved to the C portion, the supply of pressurized air from the distributor 14 is stopped, and the supply of the underfill material 5 is completed. The discharge unit 6 is moved upward by the Z-axis moving mechanism 19.
自吐出部6供給之底部填充材料5，藉由毛細管現象而被填充至半導體晶片2與基板1之空隙中，結束供給步驟。The underfill material 5 supplied from the discharge portion 6 is filled into the gap between the semiconductor wafer 2 and the substrate 1 by capillary action, and the supply step is terminated.
底部填充材料5之最佳量，以假定填滿半導體晶片2與基板1之空隙之量，且根據預先試行錯誤之測試及理論進行計算而算出。根據最佳之底部填充材料5之量，控制吐出條件而進行吐出。本實施例控制之吐出條件，係供給至注射器7內之加壓空氣之壓力與加壓時間。具體而言，藉由分配器14控制注射器7內之加壓空氣壓力，於加壓時間內吐出部6結束A→B→C之移動時，藉由分配器14控制加壓停止。根據本實施例之控制方法，藉由使移動速度與移動距離相同，使吐出時間始終固定。吐出部6之移動速度可藉由XY方向移動機構18來控制。The optimum amount of the underfill material 5 is calculated by assuming that the amount of the gap between the semiconductor wafer 2 and the substrate 1 is filled, and is calculated based on the test and theory of the preliminary trial error. According to the amount of the optimum underfill material 5, the discharge condition is controlled and the discharge is performed. The discharge condition controlled by this embodiment is the pressure and pressurization time of the pressurized air supplied into the syringe 7. Specifically, the pressure of the pressurized air in the syringe 7 is controlled by the dispenser 14, and when the discharge portion 6 ends the movement of A→B→C during the pressurization time, the pressure stop is controlled by the dispenser 14. According to the control method of the embodiment, the ejection time is always fixed by making the moving speed the same as the moving distance. The moving speed of the ejection portion 6 can be controlled by the XY direction moving mechanism 18.
又，於溫度影響吐出量之情況時，溫度亦作為控制對象。溫度之控制可例示如下方法，即，於注射器7、吐出部6、基板1等上設置加熱．冷卻手段以進行控制、或藉由利用設置於裝置周邊之加熱．冷卻手段所散發之熱來整體控制周邊溫度。視需要選擇該等方法。Further, when the temperature affects the discharge amount, the temperature is also controlled. The temperature control can be exemplified by providing heating on the syringe 7, the discharge portion 6, the substrate 1, and the like. Cooling means for control, or by utilizing heating disposed at the periphery of the device. The heat radiated by the cooling means controls the peripheral temperature as a whole. Choose these methods as needed.
又，於其他條件(經時黏度變化、吐出部之堵塞及水位差等)對吐出量產生較大影響之情況下，較佳為亦控制該等條件為所需之值。Further, in the case where the other conditions (change in viscosity over time, clogging of the discharge portion, water level difference, etc.) have a large influence on the discharge amount, it is preferable to control the conditions to a desired value.
又，亦可根據注射器7內之底部填充材料5之量而改變吐出壓力及時間，來控制所供給之底部填充材料5之量。即便於不具備直接測定吐出量之手段之吐出裝置中，若控制必要之吐出條件，亦可進行所需量之吐出。Further, the amount of the underfill material 5 to be supplied can be controlled by changing the discharge pressure and time according to the amount of the underfill material 5 in the syringe 7. In other words, in a discharge device that does not have a means for directly measuring the amount of discharge, if the necessary discharge conditions are controlled, the discharge of the required amount can be performed.
3)拍攝步驟經過供給步驟後之半導體晶片2成為拍攝步驟之對象。較佳為，拍攝步驟於被填充至空隙中之底部填充材料5之流動穩定後進行。3) The semiconductor wafer 2 after the photographing step passes through the supply step becomes the object of the photographing step. Preferably, the photographing step is performed after the flow of the underfill material 5 filled in the void is stabilized.
於拍攝步驟中，在供給步驟中供給底部填充材料5之路徑以外之半導體晶片2之周邊(圖8中之A→B→C以外之周邊)，獲取用以判定底部填充材料5是否到達之影像資料。以下進行詳細說明。In the imaging step, in the supply step, the periphery of the semiconductor wafer 2 other than the path of the underfill material 5 (the periphery other than A→B→C in FIG. 8) is acquired, and an image for determining whether or not the underfill material 5 is reached is acquired. data. The details are described below.
首先，使相機40位於a部位上。而且，藉由照射手段20照射拍攝部位，對包括半導體晶片2之周邊以及基板1之影像進行拍攝。此處，所拍攝之影像並非為動態影像，較佳為靜止影像。同樣，於點b、點c、點d、及點e，亦拍攝包括半導體晶片2之周邊以及基板1之影像。First, the camera 40 is placed on the a portion. Then, the imaging unit is irradiated by the irradiation means 20, and an image including the periphery of the semiconductor wafer 2 and the substrate 1 is imaged. Here, the captured image is not a moving image, and is preferably a still image. Similarly, at the point b, the point c, the point d, and the point e, images including the periphery of the semiconductor wafer 2 and the substrate 1 are also taken.
照射手段20藉由以環狀且均等地配置於相機40之周圍之照射部21而進行照射，因此，相機40等之影像並不映入拍攝範圍內，可遍及拍攝範圍而照射均等亮度之光。因此，可獲得最適於影像辨識、且對比度清晰之影像。Since the irradiation means 20 is irradiated by the irradiation unit 21 which is disposed in an annular shape and uniformly disposed around the camera 40, the image of the camera 40 or the like is not reflected in the imaging range, and the uniform brightness light can be irradiated over the imaging range. . Therefore, an image that is most suitable for image recognition and has a clear contrast can be obtained.
拍攝所使用之相機40與對準步驟中使用之相機40為共用。對準用之相機40，其目的在於拍攝對準標記，因此通常無法進行廣視角之拍攝。因此，對準用之相機40僅可拍攝半導體晶片2之周邊之一部分，因此本實施例中使相機40移動至點a至點e之各部位來進行拍攝(再者，於使用可進行廣視角之拍攝之相機之情況，亦可一次拍攝點a至點e之全部影像)。如此，根據本實施例之構成，無需設置多個相機40，因此可使裝置整體小型化，又，可使裝置廉價地構成。The camera 40 used for shooting is shared with the camera 40 used in the alignment step. The purpose of aligning the camera 40 is to take an alignment mark, so that it is generally impossible to take a wide angle of view. Therefore, the camera 40 for alignment can only capture a part of the periphery of the semiconductor wafer 2, so in the present embodiment, the camera 40 is moved to each of the points a to e to perform photographing (further, the wide viewing angle can be used for use. In the case of the camera being shot, all images from point a to point e can be taken at once). As described above, according to the configuration of the present embodiment, since it is not necessary to provide a plurality of cameras 40, the entire apparatus can be downsized, and the apparatus can be configured inexpensively.
4)判定步驟由相機40所拍攝之影像資料，係被傳送至影像辨識部31。影像辨識部31對分別對應點a至點e之影像進行辨識，以確認半導體晶片2之周邊之更外側是否存在底部填充材料5。影像辨識使用習知之簡易方法即可，例如揭示有相對於已實施二值化等減色處理之影像資料，分割為任意區域並對該區域中進行底部填充步驟前後之面積比進行判定之方法，或根據基板1之表面與底部填充材料5之對比度差進行判定之方法。如此，於本實施例之裝置中，可藉由照射手段20而獲得對比度清晰之影像，因此無需進行複雜之影像辨識，即可確認底部填充材料5之存在。4) Determination Step The image data captured by the camera 40 is transmitted to the image recognition unit 31. The image recognition unit 31 recognizes the images corresponding to the points a to e, respectively, to confirm whether or not the underfill material 5 is present on the outer side of the periphery of the semiconductor wafer 2. The image recognition may be performed by a simple method known in the art, for example, by displaying image data which has been subjected to subtractive processing such as binarization, and dividing into arbitrary regions and determining the area ratio before and after the underfill step in the region, or A method of determining the difference between the surface of the substrate 1 and the underfill material 5 is determined. Thus, in the apparatus of the present embodiment, the image with clear contrast can be obtained by the illumination means 20, so that the presence of the underfill material 5 can be confirmed without performing complicated image recognition.
於所有部位上，底部填充材料5存在於半導體晶片2之外側之情況，判定底部填充材料5之填充良好。於任一部位上皆無法確認底部填充材料5存在於外側之情況下，判定底部填充材料5之填充不良。例如，於圖8中，底部填充材料5並未到達點c，因此判定為填充不良。In all the cases, the underfill material 5 was present on the outer side of the semiconductor wafer 2, and it was judged that the underfill material 5 was well filled. In the case where it was not confirmed that the underfill material 5 was present on the outside at any portion, it was judged that the underfill material 5 was poorly filled. For example, in FIG. 8, the underfill material 5 does not reach the point c, and thus it is determined that the filling is poor.
5)補充步驟於判定步驟中判定填充良好之情況，半導體晶片2之底部填充步驟結束。於判定底部填充材料5之填充不良之情況，實施補充步驟。例如，於圖8中，底部填充材料5並未到達點c，因此判定為填充不良，而實施補充步驟。5) Supplementary Step In the case where the filling step is judged to be good in the determination step, the underfill step of the semiconductor wafer 2 is ended. In the case where it is determined that the underfill material 5 is poorly filled, a supplementary step is performed. For example, in FIG. 8, the underfill material 5 does not reach the point c, and thus it is determined that the filling is poor, and the replenishing step is performed.
於圖8之情況，補充步驟以如下方式進行。In the case of Fig. 8, the supplementary step is performed in the following manner.
(1)首先，使吐出部6移動至D部位上。並且，一邊使吐出部6於D→B→E之路徑移動，一邊自吐出部6吐出底部填充材料5。所吐出之底部填充材料5被填充至半導體晶片2與基板1之空隙中，擠壓已填充於空隙之底部填充材料5，補充底部填充材料5不足之點c之部分。此處，補充步驟僅進行不足部分之補充，因此相比於供給步驟，供給少量之底部填充材料5即可。因此，一邊於短於供給步驟之距離D→B→E路徑移動一邊吐出即可。(1) First, the discharge portion 6 is moved to the D portion. Then, the underfill material 5 is discharged from the discharge portion 6 while moving the discharge portion 6 on the path of D→B→E. The discharged underfill material 5 is filled into the gap between the semiconductor wafer 2 and the substrate 1, and the underfill material 5 which has been filled in the void is pressed to supplement the portion of the underfill material 5 which is insufficient. Here, the replenishing step is only supplemented by the insufficient portion, so that a small amount of the underfill material 5 can be supplied compared to the supply step. Therefore, it is sufficient to discharge while moving in a path shorter than the distance D→B→E of the supply step.
為了補充少量之底部填充材料5，不僅可藉由縮短距離來減少吐出量，亦可藉由減少吐出壓力、或提高移動速度等來減少吐出量。又，於將吐出部6維持靜止而進行吐出之情況，亦可藉由縮短吐出時間來減少吐出量。In order to supplement a small amount of the underfill material 5, not only the discharge amount can be reduced by shortening the distance, but also the discharge amount can be reduced by reducing the discharge pressure or increasing the moving speed. Further, when the discharge unit 6 is kept stationary and discharged, the discharge amount can be reduced by shortening the discharge time.
自在供給步驟中供給底部填充材料5之邊AB、邊BC側，再次供給底部填充材料5，藉此可防止基板1與半導體晶片2之空隙內殘留空氣。其原因在於，位於基板1與半導體晶片2之空隙中的底部填充材料5，朝外側擠壓存在於點c附近之空隙中之空氣。於需要補充多個部位之情況及上述空隙中殘留有空氣之可能性較高之情況，較佳為重複供給步驟與吐出部6之路徑。The underfill material 5 is supplied again from the side AB and the side BC side of the underfill material 5 in the supply step, whereby air remaining in the gap between the substrate 1 and the semiconductor wafer 2 can be prevented. The reason for this is that the underfill material 5 located in the gap between the substrate 1 and the semiconductor wafer 2 presses the air existing in the gap near the point c toward the outside. In the case where it is necessary to replenish a plurality of parts and the possibility that air remains in the above-mentioned voids, it is preferable to repeat the supply step and the path of the discharge unit 6.
(2)又，亦可朝不存在底部填充材料5之部位直接供給底部填充材料5。此時，可使吐出部6之動作最小，故效率佳。於底部填充材料5未到達之部分較少之情況等、無空氣進入之影響之情況，該方法可縮短所需時間，故較佳。(2) Further, the underfill material 5 may be directly supplied to a portion where the underfill material 5 is not present. At this time, the operation of the discharge unit 6 can be minimized, so that the efficiency is good. In the case where the portion where the underfill material 5 is not reached is small, etc., and there is no influence of air ingress, the method can shorten the required time, which is preferable.
於圖8之情況，使吐出部6移動至c部位而供給底部填充材料5，藉此進行補充。又，經判定底部填充材料5未到達c部位與e部位此2個部位之情況，使吐出部6分別移動至c部位與e部位之位置而供給底部填充材料5，藉此進行補充。In the case of Fig. 8, the discharge portion 6 is moved to the c-part portion to supply the underfill material 5, thereby supplementing. Moreover, when it is determined that the underfill material 5 has not reached the two portions c and e, the discharge portion 6 is moved to the position of the c portion and the e portion, and the underfill material 5 is supplied to be replenished.
(3)亦可藉由既定之計算方法，算出補充步驟中要補充之底部填充材料5之量。尤其於自與供給步驟中供給液體材料時之吐出部之位置重疊之位置供給液體材料之情況為有效。(3) The amount of the underfill material 5 to be replenished in the replenishing step can also be calculated by a predetermined calculation method. In particular, it is effective to supply the liquid material from a position overlapping the position of the discharge portion when the liquid material is supplied in the supply step.
第1方法係如下所示，判定步驟中對應點a至點e而判定底部填充材料5之有無，並根據不存在底部填充材料5之部位之數，決定補充步驟中要補充之底部填充材料5之量。其原因在於，不存在底部填充材料5之部位之數與需要補充之底部填充材料5之量存在固定之相關關係。The first method is as follows. In the determination step, the presence or absence of the underfill material 5 is determined corresponding to the point a to the point e, and the underfill material 5 to be supplemented in the replenishing step is determined according to the number of portions where the underfill material 5 is not present. The amount. The reason for this is that there is a fixed correlation between the number of portions where the underfill material 5 is not present and the amount of the underfill material 5 that needs to be replenished.
第2方法如下所示，判定步驟中根據點a至點e檢測自半導體晶片2之緣滲出之底部填充材料5之寬度，並根據該寬度決定補充步驟中要補充之底部填充材料5之量。其原因在於，滲出之底部填充材料5之寬度與需要補充之底部填充材料5之量存在固定之相關關係。此處，寬度之檢測可使用各種方法，可列舉如下方法作為一例，對離工件之緣一定距離之多個平行線，進行於平行於工件之緣之線上確認有無底部填充材料5之作業，並檢測自確認無底部填充材料5之線與確認有底部填充材料5之線邊界滲出的寬度。此處，於各平行線上存在少量底部填充材料5之情況或於某一定範圍以上存在之情況等，判定於該等線上存在底部填充材料5。作為其他示例可列舉如下方法，檢測所拍攝之影像中與工件之緣成直角線上，對比度變化較大之部分，藉此辨識工件與底部填充材料5邊界及底部填充材料5與基板之邊界，並檢測滲出之底部填充材料5之寬度。此處，視需要，較佳為，於所拍攝之影像之多個部位測定線寬來進行統計處理。The second method is as follows. In the determining step, the width of the underfill material 5 oozing out from the edge of the semiconductor wafer 2 is detected based on the points a to e, and the amount of the underfill material 5 to be replenished in the replenishing step is determined based on the width. The reason for this is that there is a fixed correlation between the width of the oozing underfill material 5 and the amount of underfill material 5 that needs to be replenished. Here, various methods can be used for detecting the width, and as an example, a method of confirming the presence or absence of the underfill material 5 on a line parallel to the edge of the workpiece on a plurality of parallel lines at a certain distance from the edge of the workpiece can be cited. The width from which the line of the underfill material 5 is confirmed to be oozing out from the line boundary where the underfill material 5 is confirmed is detected. Here, in the case where a small amount of the underfill material 5 is present on each parallel line or in a certain range or more, it is determined that the underfill material 5 exists on the lines. As another example, a method of detecting a portion where the contrast changes greatly on a right angle line with the edge of the workpiece in the captured image, thereby identifying the boundary between the workpiece and the underfill material 5 and the boundary between the underfill material 5 and the substrate, and The width of the oozing underfill material 5 is detected. Here, it is preferable to perform statistical processing by measuring the line width at a plurality of locations of the captured image, as needed.
再者，當然亦可組合第1方法與第2方法來使用。Further, of course, the first method and the second method may be combined and used.
於拍攝步驟及判定步驟中，為進行高可靠性之判定，較佳為對一個半導體晶片2儘可能多的部位，進行液體材料已到達之判定。然而，就生產性之觀點而言，較佳為作為判定對象之部位較少。因此，本實施例中，嘗試以較少部位有效率地判斷底部填充材料5之填充是否良好。In the imaging step and the determination step, in order to determine the high reliability, it is preferable to determine the arrival of the liquid material as much as possible for one portion of the semiconductor wafer 2. However, from the viewpoint of productivity, it is preferable that there are fewer sites to be determined. Therefore, in the present embodiment, it is attempted to efficiently judge whether or not the filling of the underfill material 5 is good with a small number of portions.
圖9(a)表示一邊使吐出部6沿著半導體晶片2之一邊即邊AB移動一邊供給底部填充材料5之情況。於該情況，對不屬於供給底部填充材料5之邊的角C、角D，拍攝包括半導體晶片2之周邊之影像，判定底部填充材料5是否到達即可。期望於更短時間內進行拍攝判定之情況下，暫不考慮判定精度下降之問題，對角C、角D之任一者進行拍攝．判定即可。Fig. 9(a) shows a case where the underfill material 5 is supplied while moving the discharge portion 6 along one side of the semiconductor wafer 2, that is, the side AB. In this case, an image including the periphery of the semiconductor wafer 2 is taken at an angle C and an angle D which are not to the side where the underfill material 5 is supplied, and it is determined whether or not the underfill material 5 has arrived. When it is desired to perform the shooting determination in a shorter time, the problem of the determination accuracy is not considered, and any of the angle C and the angle D is photographed. Just judge.
圖9(b)表示一邊使吐出部6沿著半導體晶片2之兩邊即邊AB、邊BC移動，一邊供給底部填充材料5之情況。於該情況，對不屬於供給底部填充材料5之AB、邊BC的角D，拍攝包括半導體晶片2之周邊之影像，判定底部填充材料5是否到達即可。(b) of FIG. 9 shows a case where the underfill material 5 is supplied while moving the discharge portion 6 along the sides AB and BC of both sides of the semiconductor wafer 2. In this case, for the angle D of the AB and the side BC which are not supplied to the underfill material 5, an image including the periphery of the semiconductor wafer 2 is taken, and it is determined whether or not the underfill material 5 has arrived.
圖9(c)表示使吐出部6於a部位上靜止而供給底部填充材料5之情況。於該情況，對不屬於供給底部填充材料5之a部位之邊AB的角C、角D，拍攝包括半導體晶片2之周邊之影像，並判定底部填充材料5是否到達即可。在期望於更短時間內進行拍攝．判定之情況，暫不考慮判定精度下降之問題，對角C、角D之任一者進行拍攝．判定即可。Fig. 9(c) shows a case where the discharge portion 6 is stationary at the a portion and the underfill material 5 is supplied. In this case, an image including the periphery of the semiconductor wafer 2 is taken at an angle C and an angle D which are not the side AB of the a portion to which the underfill material 5 is supplied, and it is determined whether or not the underfill material 5 has arrived. I expect to shoot in a shorter time. In the case of judgment, the problem of the determination accuracy is not considered, and any one of the angle C and the angle D is photographed. Just judge.
如上所述，根據實施例2之判定方法，相比於實施例1之判定方法，可以較少判定部位而有效地判斷底部填充材料5之填充是否良好。As described above, according to the determination method of the second embodiment, compared with the determination method of the first embodiment, it is possible to effectively judge whether or not the filling of the underfill material 5 is good by less determining the portion.
如圖10所示，本實施例中對一片基板1上載置有多個半導體晶片2A、2B、2C、2D時之各步驟加以說明。As shown in FIG. 10, in the present embodiment, each step in which a plurality of semiconductor wafers 2A, 2B, 2C, and 2D are placed on one substrate 1 will be described.
於本實施例中，並非對半導體晶片2A~2D分別實施供給步驟~補充步驟，首先對半導體晶片2A~2D全體實施供給步驟後，再實施拍攝步驟~補充步驟。亦即，依半導體晶片2A、2B、2C、2D之順序實施供給步驟後，再依半導體晶片2A、2B、2C、2D之順序實施拍攝步驟與判定步驟，其後，僅對經判定為底部填充材料5之填充不良之半導體晶片2實施補充步驟。In the present embodiment, the supply steps to the complementary steps are not performed on the semiconductor wafers 2A to 2D. First, the supply steps are performed on the entire semiconductor wafers 2A to 2D, and then the imaging step to the supplementary step are performed. That is, after the supply steps are performed in the order of the semiconductor wafers 2A, 2B, 2C, and 2D, the imaging steps and the determination steps are performed in the order of the semiconductor wafers 2A, 2B, 2C, and 2D, and thereafter, only the underfill is determined. The semiconductor wafer 2, which is poorly filled with the material 5, performs a supplementary step.
如此，不對半導體晶片2A~2D分別實施供給步驟~補充步驟之原因在於，自所供給之底部填充材料5流入半導體晶片2與基板1之空隙至流動穩定為止存在時滯，若於半導體晶片2A之供給步驟後立即實施半導體晶片2A之拍攝步驟，則需要等待至流動穩定為止後才進行拍攝，導致時間浪費。Thus, the reason why the semiconductor wafers 2A to 2D are not subjected to the supply step to the supplementary step is that there is a time lag from when the supplied underfill material 5 flows into the gap between the semiconductor wafer 2 and the substrate 1 until the flow is stabilized, if it is in the semiconductor wafer 2A. Immediately after the supply step, the imaging step of the semiconductor wafer 2A is performed, and it is necessary to wait until the flow is stabilized before the photographing is performed, resulting in wasted time.
如本實施例所示，先以基板單位實施供給步驟後再實施拍攝步驟及補充步驟，則直至流動穩定為止之時間內可對其他半導體晶片2進行填充作業，故可縮短每片基板之底部填充步驟所需之時間。再者，拍攝步驟與判定步驟當然亦可並行實施。例如，有效為對半導體晶片2A進行拍攝後，進行半導體晶片2A之判定，其間對半導體晶片2B進行拍攝。As shown in the present embodiment, after the supply step is performed in the substrate unit, and then the imaging step and the replenishing step are performed, the filling of the other semiconductor wafers 2 can be performed until the flow is stabilized, so that the underfill of each substrate can be shortened. The time required for the step. Furthermore, the imaging step and the determination step can of course be carried out in parallel. For example, after the semiconductor wafer 2A is imaged, the determination of the semiconductor wafer 2A is performed, and the semiconductor wafer 2B is imaged.
如圖11所示，本實施例之裝置除具備對準用相機40a外，亦具備拍攝步驟用之相機40b。As shown in Fig. 11, the apparatus of the present embodiment includes a camera 40b for imaging steps in addition to the alignment camera 40a.
拍攝步驟用相機40b藉由與對準用相機40a及吐出部6之XY方向移動機構不同之另一XY方向移動機構18b而移動自如。因此，拍攝步驟用相機40b可獨立於對準用相機40a及吐出部6，而於XY方向上移動。就藉由如此構成之裝置而對圖10之基板1進行底部填充之情況之動作加以說明。The imaging step 40b is movable by the camera 40b by another XY direction moving mechanism 18b that is different from the XY direction moving mechanism of the alignment camera 40a and the discharge unit 6. Therefore, the imaging step camera 40b can be moved in the XY direction independently of the alignment camera 40a and the discharge unit 6. The operation of the case where the substrate 1 of Fig. 10 is underfilled by the device thus constructed will be described.
首先，對半導體晶片2A~2D實施供給步驟。即，朝半導體晶片2A供給底部填充材料5結束後，立即藉由吐出部6朝半導體晶片2B供給底部填充材料5，同樣亦對半導體晶片2C、半導體晶片2D依序供給底部填充材料5。First, a supply step is performed on the semiconductor wafers 2A to 2D. That is, immediately after the supply of the underfill material 5 to the semiconductor wafer 2A, the underfill material 5 is supplied to the semiconductor wafer 2B by the discharge portion 6, and the underfill material 5 is sequentially supplied to the semiconductor wafer 2C and the semiconductor wafer 2D.
與供給步驟並行地實施拍攝步驟。即，供給至半導體晶片2A之底部填充材料5之流動穩定後，藉由拍攝步驟用相機40b對半導體晶片2A進行拍攝，同樣依序對半導體晶片2B、半導體晶片2C、半導體晶片2D進行拍攝。The photographing step is carried out in parallel with the supply step. In other words, after the flow of the underfill material 5 supplied to the semiconductor wafer 2A is stabilized, the semiconductor wafer 2A is imaged by the camera 40b in the imaging step, and the semiconductor wafer 2B, the semiconductor wafer 2C, and the semiconductor wafer 2D are sequentially imaged.
與拍攝步驟並行地實施判定步驟。即，半導體晶片2A之拍攝結束後，對半導體晶片2A進行判定，同樣亦對半導體晶片2B、半導體晶片2C、半導體晶片2D進行判定。The determining step is performed in parallel with the photographing step. That is, after the imaging of the semiconductor wafer 2A is completed, the semiconductor wafer 2A is judged, and the semiconductor wafer 2B, the semiconductor wafer 2C, and the semiconductor wafer 2D are also determined.
半導體晶片2D之供給步驟結束後，對於半導體晶片2A~2D之判定步驟中經判定為底部填充之填充不良之半導體晶片2，自2A開始依序實施補充步驟。如此，藉由使吐出部6、與拍攝步驟用相機40b獨立地於XY方向上移動，可於一個基板上並行地實施供給步驟．拍攝步驟．判定步驟．補充步驟，故可進而縮短每片基板之底部填充步驟所需之時間。After the supply step of the semiconductor wafer 2D is completed, the semiconductor wafer 2 determined to be underfilled in the determination step of the semiconductor wafers 2A to 2D is sequentially subjected to the replenishing step from 2A. In this way, by the ejection unit 6 and the imaging step camera 40b moving independently in the XY direction, the supply step can be performed in parallel on one substrate. Shooting steps. Decision step. The additional steps can further reduce the time required for the underfill step of each substrate.
本實施例中對實施例2進一步嘗試改良，嘗試以更少之判定部位有效判斷底部填充材料5之填充是否良好。In the present embodiment, a further attempt was made to improve the embodiment 2, and it was attempted to effectively judge whether or not the filling of the underfill material 5 was good with fewer determination portions.
實施例2中，於圖9(a)之圖案中，為了判定底部填充材料5是否適當地填充，而對角C、角D是否存在底部填充材料5進行判定。然而，當底部填充材料5之填充難易度於角部與邊部無較大差別之情況下，有效的是僅對邊CD中之1點進行判定。因此，本實施例中，於邊CD之中央之1點對包括半導體晶片2之周邊之影像進行拍攝，判定底部填充材料5是否到達，藉此可於更短時間內進行拍攝．判定。In the second embodiment, in the pattern of FIG. 9(a), in order to determine whether or not the underfill material 5 is properly filled, it is determined whether or not the underfill material 5 is present at the corner C and the angle D. However, when the filling difficulty of the underfill material 5 is not greatly different between the corner portion and the side portion, it is effective to judge only one point in the side CD. Therefore, in this embodiment, an image including the periphery of the semiconductor wafer 2 is imaged at a point in the center of the side CD, and it is determined whether or not the underfill material 5 is reached, whereby the image can be taken in a shorter time. determination.
圖9(c)之圖案亦相同，有效的是僅對邊CD中之1點進行判定。圖9(b)之圖案中，對邊CD中之1點與邊AD中之1點(較佳為分別靠近角D之1點)進行判定即可。The pattern of Fig. 9(c) is also the same, and it is effective to judge only one point in the side CD. In the pattern of Fig. 9(b), one point of the side CD and one point of the side AD (preferably one point closer to the angle D) may be determined.
再者，如上所述，當然亦可藉由規定之計算方法算出所補充之底部填充材料5之量。Further, as described above, of course, the amount of the underfill material 5 to be supplemented can be calculated by a predetermined calculation method.
本發明可實施於吐出液體材料之各種裝置中。The invention can be practiced in a variety of devices for dispensing liquid materials.
作為液體材料離開吐出部前與工件接觸之型式之吐出方式，可例示有於所需時間內對前端具有噴嘴之注射器內之液體材料施加經調壓之空氣的氣壓式；具有平板試管機構或旋轉試管機構之管式；使在前端具有噴嘴之儲存容器之內表面上密接滑動之柱塞移動所需量而吐出之柱塞式；藉由螺桿之旋轉而吐出液體材料之螺旋式；以及藉由閥門之開閉對施加有所需壓力之液體材料進行吐出控制的閥門式等。The discharge method of the type in which the liquid material comes into contact with the workpiece before leaving the discharge portion can be exemplified by a pressure type in which a pressure-regulated air is applied to the liquid material in the syringe having the nozzle at the tip end in a required time; a tubular type of a test tube mechanism; a plunger type in which a plunger that is in close contact with a sliding plunger on a front surface of a storage container having a nozzle at the front end is moved by a required amount; a spiral type in which a liquid material is discharged by rotation of a screw; and The opening and closing of the valve is a valve type that performs discharge control of a liquid material to which a required pressure is applied.
又，作為液體材料離開吐出部後與工件接觸之型式之吐出方式，列舉有使閥體衝擊閥座而使液體材料自噴嘴前端飛翔噴出之噴射式；使柱塞型式之柱塞移動，其次突然停止，而使之同樣自噴嘴前端飛翔噴出之柱塞噴射型式；以及連續噴射方式或噴印(demand)方式之油墨噴射型式等。Further, as a discharge method in which the liquid material is separated from the discharge portion and is in contact with the workpiece, a spray type in which the valve body is impacted on the valve seat to cause the liquid material to fly from the tip end of the nozzle is exemplified, and the plunger type plunger is moved, and the plunger is suddenly moved. A plunger injection pattern that stops and is also ejected from the front end of the nozzle; and an ink jet pattern of a continuous ejection method or a demanding method.
1．．．基板1. . . Substrate
2、2A、2B、2C、2D．．．半導體晶片2, 2A, 2B, 2C, 2D. . . Semiconductor wafer
3．．．保持手段3. . . Means of retention
4．．．焊錫凸塊4. . . Solder bump
5．．．底部填充材料5. . . Underfill material
6．．．吐出部(噴嘴)6. . . Spit (nozzle)
7．．．注射器7. . . syringe
8．．．注射器座8. . . Syringe holder
9．．．Z平台9. . . Z platform
11．．．導軸11. . . Guide shaft
12．．．滾珠螺桿12. . . Ball screw
13．．．空氣試管13. . . Air test tube
14．．．分配器14. . . Distributor
15．．．頂座15. . . Top seat
16．．．光纜16. . . Optical cable
17．．．搬送軌道17. . . Transport track
18．．．XY方向移動機構18. . . XY direction moving mechanism
19．．．Z方向移動機構19. . . Z direction moving mechanism
20．．．照射手段20. . . Irradiation means
21．．．照射部twenty one. . . Irradiation department
30．．．光源30. . . light source
31．．．影像辨識部31. . . Image recognition unit
40．．．相機40. . . camera
40a．．．對準用相機40a. . . Aligning camera
40b．．．拍攝步驟用相機40b. . . Shooting steps with camera
41．．．相機支架41. . . Camera stand
50．．．氣泡50. . . bubble
60．．．對準標記60. . . Alignment mark
a、b、c、d、e．．．點a, b, c, d, e. . . point
A、B、C、D、E．．．角A, B, C, D, E. . . angle
α、β．．．對準標記α, β. . . Alignment mark
圖1(a)及(b)係用以說明底部填充步驟之側視圖及俯視圖。1(a) and (b) are side views and plan views for explaining the underfilling step.
圖2(a)至(c)係用以說明底部填充步驟中之噴嘴路徑之圖式。2(a) to (c) are diagrams for explaining the nozzle path in the underfill step.
圖3係用以說明半導體晶片與基板之空隙存在氣泡之情況之透視圖。Fig. 3 is a perspective view for explaining the case where bubbles are present in the gap between the semiconductor wafer and the substrate.
圖4(a)及(b)係用以說明恰當地進行底部填充材料之填充之狀態(a)、以及需要補充之狀態(b)的俯視圖。4(a) and 4(b) are plan views for explaining a state (a) in which the underfill material is properly filled and a state (b) to be replenished.
圖5係表示實施例1之吐出裝置之概要之側視圖。Fig. 5 is a side view showing the outline of the discharge device of the first embodiment.
圖6係照射手段之說明圖。Fig. 6 is an explanatory view of an irradiation means.
圖7係用以說明附有對準標記之基板與半導體晶片之各部位之平面圖。Figure 7 is a plan view showing portions of a substrate with an alignment mark and a semiconductor wafer.
圖8係實施例1之補充步驟之說明圖。Figure 8 is an explanatory diagram of a supplementary step of Embodiment 1.
圖9(a)至(c)係實施例2之判定步驟之說明圖。9(a) to 9(c) are explanatory views of the determination steps of the second embodiment.
圖10係實施例3之各步驟之說明圖。Fig. 10 is an explanatory view showing the steps of the embodiment 3.
圖11係表示實施例4之吐出裝置之概要之側視圖。Fig. 11 is a side view showing the outline of the discharge device of the fourth embodiment.
2．．．半導體晶片2. . . Semiconductor wafer
60．．．對準標記60. . . Alignment mark
A、B、C、D、E．．．角A, B, C, D, E. . . angle
a、b、c、d、e．．．點a, b, c, d, e. . . point
α、β．．．對準標記α, β. . . Alignment mark
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| JP2006321011A JP5089966B2 (en) | 2006-11-29 | 2006-11-29 | Method and apparatus for filling liquid material |
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| TWI665021B (en) * | 2017-05-25 | 2019-07-11 | 日商武藏工業股份有限公司 | Liquid material coating device and liquid material coating method |
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| US20140093638A1 (en) * | 2012-09-28 | 2014-04-03 | Jonathan Joel Bloom | Method of dispensing material based on angular locate feature |
| JP6355440B2 (en) * | 2014-06-09 | 2018-07-11 | 富士通周辺機株式会社 | Underfill material coating equipment |
| JP7054017B2 (en) * | 2020-03-09 | 2022-04-13 | 日亜化学工業株式会社 | Manufacturing method of light emitting device and inspection method of light emitting device |
| JP7003184B2 (en) * | 2020-06-22 | 2022-01-20 | Ｔｏｗａ株式会社 | Resin molding equipment and manufacturing method of resin molded products |
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| JPH11121482A (en) * | 1997-10-14 | 1999-04-30 | Matsushita Electric Ind Co Ltd | Application method of underfill bond |
| JP2005217435A (en) * | 2005-03-18 | 2005-08-11 | Matsushita Electric Ind Co Ltd | Method and device for mounting part |
| JP2006286744A (en) * | 2005-03-31 | 2006-10-19 | Taiyo Yuden Co Ltd | Semiconductor mounting substrate, substrate for mounting semiconductor, and appearance inspection method and device for them |
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| JPH11204553A (en) * | 1998-01-08 | 1999-07-30 | Matsushita Electric Ind Co Ltd | Sealing device and constant-quantity applying method thereof |
| CN1531042A (en) * | 2003-01-28 | 2004-09-22 | 诺德森公司 | Method for effective capillary fill |
| JP2005116805A (en) * | 2003-10-08 | 2005-04-28 | Seiko Epson Corp | Tcp semiconductor device and method and device for manufacturing it |
| JP2007194403A (en) * | 2006-01-19 | 2007-08-02 | Sony Corp | Apparatus and method for manufacturing electronic device, and for inspecting underfill material filling state |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH11121482A (en) * | 1997-10-14 | 1999-04-30 | Matsushita Electric Ind Co Ltd | Application method of underfill bond |
| JP2005217435A (en) * | 2005-03-18 | 2005-08-11 | Matsushita Electric Ind Co Ltd | Method and device for mounting part |
| JP2006286744A (en) * | 2005-03-31 | 2006-10-19 | Taiyo Yuden Co Ltd | Semiconductor mounting substrate, substrate for mounting semiconductor, and appearance inspection method and device for them |
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| TWI665021B (en) * | 2017-05-25 | 2019-07-11 | 日商武藏工業股份有限公司 | Liquid material coating device and liquid material coating method |
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| WO2008065979A1 (en) | 2008-06-05 |
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| CN101563764B (en) | 2012-05-30 |
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| JP5089966B2 (en) | 2012-12-05 |
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