TWI468542B - 化學氣相沉積（ｃｖｄ）之前驅動 - Google Patents

化學氣相沉積（ｃｖｄ）之前驅動 Download PDF

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TWI468542B
TWI468542B TW98130566A TW98130566A TWI468542B TW I468542 B TWI468542 B TW I468542B TW 98130566 A TW98130566 A TW 98130566A TW 98130566 A TW98130566 A TW 98130566A TW I468542 B TWI468542 B TW I468542B
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Taiwan
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gas
film
heterocyclobutane
nitrogen
group
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TW98130566A
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TW201016878A (en
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Xiaobing Zhou
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Dow Corning
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/36—Carbonitrides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/42—Silicides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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Description

化學氣相沉積(CVD)之前驅動
本發明係關於一種藉由使雙胺基矽雜環丁烷與選自供氮氣體、供氧氣體及其混合物之源氣體的反應性氣體混合物熱聚合以製造含矽薄膜之方法。該等所經沉積的薄膜可係氮化矽、碳氮化矽、二氧化矽或經碳摻雜之二氧化矽。此等薄膜係適用可作為半導體裝置中的電介質、鈍化塗層、障壁塗層、間隔物、襯裡及/或應壓力感測器。
二氧化矽及經碳摻雜之二氧化矽的薄膜係半導體裝置之製造中常用的電介質。此等材料之薄膜在低溫下的沉積通常係藉由電漿增強化學氣相沉積法(PECVD)所實現。但是，由於考慮到電漿對電晶體的潛在危害，在某些情況下以低溫方法為佳。
熱矽氮化物或矽碳氮化物已用作半導體裝置之電介質、鈍化塗層、障壁塗層、間隔物、襯裡或應力器。由於受裝置中緊縮的熱預算及熱敏組件的限制，半導體製造業正在尋求可使此等薄膜在降低溫度的情況下沉積之新穎前驅物。計畫在大規模生產開始時，薄膜沉積溫度於22nm的技術節點下可低至400至450℃。為使該等薄膜在該低溫下沉積，前驅物需在將近200℃下分解，且同時仍符合儲存安定性的要求。由Air Products公司所開發的肼基矽烷可能係迄今為止唯一被證明具有該低熱分解溫度及良好保存壽命之矽烷前驅物。已揭示雙(1,1-二甲基肼基)乙基矽烷(HEtSi(NH-NMe2 )2 )在370℃下氨氣中的薄膜生長速率為15/min。已知含有弱N-N鍵之1,1-二甲基肼基配位體在矽表面上可在200℃以下分解。但是，自肼基矽烷沉積之碳氮化矽薄膜的問題係密度低。
提出雙胺基矽雜環丁烷作為一類新穎前驅物以用於低溫沉積含矽薄膜。此等分子具有一可在低溫下分解的變形四員矽雜環丁烷環。但是，由於雙胺基矽雜環丁烷經由不同於肼基矽烷之機制分解，因此預期雙胺基矽雜環丁烷可具有優良的薄膜性質。
已製得之雙胺基矽雜環丁烷的純度係大於99%，且發現其可在200至250℃下分解。
本發明係關於一種藉由使包含雙胺基矽雜環丁烷與選自供氮氣體、供氧氣體及其混合物之源氣體之反應性氣體混合物熱聚合以製造含矽薄膜之方法。該等所沉積的薄膜可係氮化矽、碳氮化矽、二氧化矽或經碳摻雜之二氧化矽。此等薄膜係適用作半導體裝置之電介質、鈍化塗層、障壁塗層、間隔物、襯裡及/或應力器。
本發明係關於一種於基板上製造含矽薄膜之方法，其中該薄膜可係氮化矽、碳氮化矽、二氧化矽或經碳摻雜之二氧化矽。典型基板包括(但不限於)：半導體基板、液晶裝置、發光二極體顯示器裝置及有機發光顯示器裝置。「半導體基板」意欲包括(但不限於)基於矽之裝置及基於砷化鎵之裝置，其等係計畫用於製造半導體組件，包括焦面陣列、光電子裝置、光伏打電池、光學裝置、類電晶體裝置、3-D裝置、絕緣層上覆矽之裝置、超晶格裝置及類似物。該等半導體基板可包含一或多個佈線層。半導體基板亦可係彼等在形成任何佈線層之前的基板。
文中適用的雙胺基矽雜環丁烷係選自具有以下各式之化合物及其混合物：
其中R1 、R2 、R3 、R4 、R5 及R6 各獨立選自氫或具有1至6個碳之單價烴基(直鏈、分支鏈或環狀；飽和或不飽和)，且m及n的值為0至10。R1 、R2 、R3 、R4 、R5 及R6 各可以下列各者為例(但不限於)：甲基、乙基、丙基、異丙基、正丁基、第二丁基、第三丁基、環己基、環丙基、苯基、乙烯基、己烯基及其他基。
文中適用的雙胺基矽雜環丁烷可以具有下列各式之化合物為例：
用於製造薄膜的反應性氣體混合物亦可包含一控制量之選自供氮氣體、供氧氣體或其混合物的源氣體。源氣體之量可藉由所用氣體類型或藉由薄膜沉積的製程條件控制。
供氮氣體包括(但不限於)氮氣(N2 )、氨氣(NH3 )、肼(N2 H4 )、疊氮酸(HN3 )及其混合物。雖然肼及疊氮酸可用於低溫沉積，但供氮氣體通常係氨氣。供氮氣體之量通常係每體積份之雙胺基矽雜環丁烷為0.1或50體積份之供氮氣體，或每體積份之雙胺基矽雜環丁烷為0.2或7體積份之供氮氣體。熟悉此項技術者將可容易地根據供氮氣體的類型及沉積條件而決定供氮氣體的量。
供氧氣體包括(但不限於)氧氣、空氣、一氧化二氮、一氧化氮、一氧化碳、過氧化物、二氧化硫及其混合物。供氧氣體之量通常係每體積份之雙胺基矽雜環丁烷為0.1或50體積份之供氧氣體，或每體積份之雙胺基矽雜環丁烷為0.2或7體積份之供氧氣體。熟悉此項技術者將可容易地根據供氧氣體的類型及沉積條件而決定供氮氣體的量。
其他物質亦可存在於反應性氣體混合物中。舉例而言，可存在載體氣體(如氦氣、氮氣或氬氣)、摻雜劑(如膦或二硼烷)、鹵素(如氟)、含鹵素氣體(如SiF4 、CF4 、C3 F6 及C4 F8 )或其他任何可為該薄膜提供其他所需性質之物質。
將該反應性氣體混合物引入一包含一基板，較佳一半導體基板之沉積室內，其中誘導雙胺基矽雜環丁烷聚合而使一薄膜沉積於該基板上。由於可使用低溫且工業界廣泛應用，諸如低壓化學氣相沉積法(LPCVD)或原子層沉積法(ALD)之熱化學氣相沉積法係較佳方法。亦可使用電漿輔助CVD法以使二氧化矽或經碳摻雜的二氧化矽薄膜在有或無供氧氣體之情況下自雙胺基矽雜環丁烷沉積，或使氮化矽或碳氮化矽薄膜在有或無供氮氣體之情況下自雙胺基矽雜環丁烷沉積。
在PECVD法中，氣體混合物係藉由通過一電漿場而反應。在該等方法中所用的電漿包含源自各種來源(如放電、無線電頻率或微波範圍內的電磁場、雷射或粒子束)之能量。在電漿沉積法中，通常以使用適當功率密度(0.1至5watt/cm2 )之無線電頻率(10kHz至102 MHz)或微波(1.0至10GHz)能量為佳。但是，特定頻率、功率及壓力通常係根據設備而調整。較佳係在20至1000W之功率；0.13至1333Pa之壓力及25至500℃之溫度下利用PECVD法沉積薄膜。受限制的低壓(0.13-0.65Pa)微波頻率電漿(通常稱為高密度電漿)可在一製程中與RF頻率激發組合以有助於使變動中的表面形貌在CVD生長期間平面化。
文中一種可沉積的薄膜係碳氮化矽薄膜。此等薄膜通常具有化學式Siw Cx Hy Nz ，其中C：Si的比例可在約0:1至約10:1之範圍內，且N：Si的比例可在約0:1至約1.5:1之範圍內，其餘係氫。為沉積碳氮化矽薄膜，共反應物係供氮氣體。理論上當自雙胺基矽雜環丁烷及供氮氣體沉積薄膜時，胺基係經由胺基轉移作用而經氮源氣體置換，且矽雜環丁烷基分解而釋放出氣態有機物種。因此預期薄膜中的C：Si比例與前驅物中C：Si的比例有極大差異。雙胺基矽雜環丁烷相對於供氮氣體之量係在1份雙胺基矽雜環丁烷對100份供氮氣體，或1份雙胺基矽雜環丁烷對10份供氮氣體之範圍內。
文中另一種可沉積的薄膜係氮化矽薄膜。此等薄膜通常具有化學式Sib Hc Nd ，其中H：Si之比例可在約0:1至約5:1的範圍內，且N：Si之比例可在約0:1至約1.5:1的範圍內。此等薄膜通常係利用供氮氣體作為共反應物所沉積。雙胺基矽雜環丁烷相對於供氮氣體之量係在1份雙胺基矽雜環丁烷對100份供氮氣體，或1份雙胺基矽雜環丁烷對10份供氮氣體之範圍內。
文中另一種可沉積的薄膜係氧化矽薄膜。此等薄膜通常具有化學式SiOx ，其中x係0至3。此等薄膜通常係利用供氧氣體作為共反應物所沉積。雙胺基矽雜環丁烷相對於供氧氣體之量係在1份雙胺基矽雜環丁烷對100份供氧氣體，或1份雙胺基矽雜環丁烷對10份供氧氣體之範圍內。
文中第四種可沉積的薄膜係經碳摻雜的二氧化矽薄膜。此等所沉積之薄膜的組成通常為Sie Cf Og Hh ，其中e的值為10至33，或18至20原子%，f的值為1至66，或18至21原子%，g的值為1至66，或31至38原子%，且h的值為0.1至60，或25至32原子%；且e+f+g+h=100原子%。此等薄膜通常係利用供氧氣體作為共反應物所沉積。雙胺基矽雜環丁烷相對於供氧氣體之量係在1份雙胺基矽雜環丁烷對100份供氧氣體，或1份雙胺基矽雜環丁烷對10份供氧氣體之範圍內。
文中所沉積之薄膜可具有變動之厚度。厚度為0.01至10μm之薄膜可藉由本發明方法沉積。或者，該等薄膜的厚度為0.5至3.0μm。
文中所沉積的薄膜係特別適合作為半導體積體電路製造之電介質或障壁金屬塗層，包括(但不限於)閘極電介質、前金屬電介質及金屬間電介質及鈍化塗層。
圖1顯示用於自雙胺基矽雜環丁烷沉積氮化矽或碳氮化矽薄膜之典型製程。在此製程中，將晶圓基板載入一低壓CVD(LPCVD)反應器中，且將該LPCVD反應器加熱至目標溫度並抽真空至10-4 托以下。令氨氣與稀氮氣混合，且接著將混合的NH3 -N2 氣體計量引入該LPCVD反應器中。使氮氣載體氣體流過含有液體BTBSCB之樣品筒中。將氮氣所載的BTBSCB蒸氣計量引入LPCVD反應器中。在薄膜沉積後，令該LPCVD反應器冷卻且回填氮氣直至達到大氣壓。最後將經塗佈晶圓自該LPCVD反應器中移出。
實例
包含下列實例以說明本發明之實施例。熟悉此項技術者應瞭解：以下實例中所揭示的技術代表本發明者所發現在本發明之實施中運作良好的技術。但是，熟悉此項技術者根據本發明揭示內容應瞭解：在不脫離本發明之精神及範圍的情況下，可在所揭示的特定實施例中進行諸多改變且仍可獲得類似或相似結果。所有百分比係以重量%表示。
實例1
雙(第三丁基胺基)矽雜環丁烷(BTBSCB)係藉由使1,1-二氯矽雜環丁烷與過量的第三丁胺反應而合成(反應式1 )。為此，在0℃下，將19.7ml(0.166mol)1,1-二氯矽雜環丁烷添加至含105ml(0.999mol)第三丁胺之1L己烷中。在室溫下稠化三天後，將反應漿液過濾以去除第三丁基胺鹽酸鹽。真空乾燥過濾液以得到粗製液體產物，然後真空蒸餾之。在50托壓力及71℃下，分離得到16g純度為99.2%且產率為45%之產物。利用1 H、13 C及29 Si核磁共振法(NMR)、傅立葉轉換紅外光譜法(FT-IR)及氣相層析質譜法(GC-MS)所分析之產物結構係與雙(第三丁基胺基)矽雜環丁烷一致。
實例2
雙(乙基胺基)矽雜環丁烷係藉由使1,1-二氯矽雜環丁烷與過量的乙胺反應而合成(反應式2 )。為此，在-10℃下，將20.0ml(0.169mol)1,1-二氯矽雜環丁烷添加至含66.2ml(1.01mol)乙胺之1L戊烷中。在室溫下稠化一天後，將反應漿液過濾以去除乙胺鹽酸鹽。真空乾燥過濾液以得到粗製液體產物，然後真空蒸餾之。在30托壓力及42℃下，分離得到9.8g純度至少為99%且產率為36%的產物。利用1 H、13 C及29 Si核磁共振法、傅立葉轉換紅外光譜法及氣相層析質譜法所分析之產物結構係與雙(乙基胺基)矽雜環丁烷一致。
實例3
雙(吡咯啶基)矽雜環丁烷係藉由使1,1-二氯矽雜環丁烷與過量的吡咯啶反應而合成(反應式3 )。為此，在-10℃下，將23.7ml(0.200mol)1,1-二氯矽雜環丁烷添加至含100.0ml(1.20mol)吡咯啶之1L己烷中。在室溫下稠化兩天後，將反應漿液過濾以去除吡咯啶鹽酸鹽。真空乾燥過濾液以得到粗製液體產物，然後真空蒸餾之。在1托壓力及51℃下，分離得到15.4g純度為99.7%且產率為34%的產物。利用1 H、13 C及29 Si核磁共振法、傅立葉轉換紅外光譜法及氣相層析質譜法所分析之產物結構係與雙(吡咯啶基)矽雜環丁烷一致。
實例4 ：測定雙胺基矽雜環丁烷之熱分解溫度。
實例1至3中所製造的雙胺基矽雜環丁烷係利用示差掃描熱量法(DSC)分析。該等分子的熱分解開始於放熱曲線在DSC光譜上開始爬升處的溫度。所測得雙(第三丁基胺基)矽雜環丁烷(BTBSCB)、雙(乙基胺基)矽雜環丁烷及雙(吡咯啶基)矽雜環丁烷的熱分解溫度分別為200℃、200℃及250℃。已經過熱處理之DSC樣品係藉由氣相層析質譜法分析以確認此等物質之分解。BTBSCB之分解係進一步藉由在200℃及295℃下進行的頂空氣相層析法核實。
圖1顯示在一低壓CVD反應器中使用雙(第三丁基胺基)矽雜環丁烷(BTBSCB)使碳氮化矽薄膜沉積之製程。
(無元件符號說明)

Claims (12)

  1. 一種用於在一基板上製造含矽薄膜之方法，其中該方法包括使包含雙胺基矽雜環丁烷及選自供氮氣體、供氧氣體及其混合物之源氣體的反應性氣體混合物熱聚合，其中該雙胺基矽雜環丁烷係選自： 其中R1 、R2 、R3 、R4 、R5 及R6 各獨立選自氫或具有1至6個碳之單價烴基，且m及n的值為0至10。
  2. 如請求項1之方法，其中該雙胺基矽雜環丁烷係雙(吡咯啶基)矽雜環丁烷。
  3. 如請求項1之方法，其中該源氣體係供氮氣體，其係選自氮氣(N2 )、氨氣(NH3 )、肼(N2 H4 )、疊氮酸(HN3 )及其混合物。
  4. 如請求項1之方法，其中每體積份之雙胺基矽雜環丁烷有0.1至50體積份之供氮氣體。
  5. 如請求項1之方法，其中該源氣體係氨氣。
  6. 如請求項1之方法，其中該源氣體係供氧氣體，且每體積份之雙胺基矽雜環丁烷有0.1至50體積份之供氧氣體。
  7. 如請求項1之方法，其中亦存在一選自載體氣體、摻雜劑、鹵素及含鹵素氣體之物質。
  8. 如請求項1之方法，其中該基板係半導體基板。
  9. 如請求項1之方法，其中該熱聚合係藉由低壓化學氣相沉積法或原子層沉積法進行。
  10. 如請求項1之方法，其中該所沉積薄膜係碳氮化矽薄膜、氮化矽薄膜、氧化矽薄膜或經碳摻雜之二氧化矽薄膜。
  11. 如請求項1之方法，其中該所沉積薄膜的厚度為0.01至10μm。
  12. 一種雙(吡咯啶基)矽雜環丁烷之用途，其係作為用於沉積含矽薄膜之前驅物。
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