TWI463645B - 影像感測器中之彩色濾光片陣列對準標記形成 - Google Patents

影像感測器中之彩色濾光片陣列對準標記形成 Download PDF

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Publication number
TWI463645B
TWI463645B TW098123132A TW98123132A TWI463645B TW I463645 B TWI463645 B TW I463645B TW 098123132 A TW098123132 A TW 098123132A TW 98123132 A TW98123132 A TW 98123132A TW I463645 B TWI463645 B TW I463645B
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TW
Taiwan
Prior art keywords
layer
image sensor
color filter
wafer
sensor
Prior art date
Application number
TW098123132A
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English (en)
Chinese (zh)
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TW201007937A (en
Inventor
菲德烈克Ｔ 布萊迪
Original Assignee
豪威科技股份有限公司
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Application filed by 豪威科技股份有限公司 filed Critical 豪威科技股份有限公司
Publication of TW201007937A publication Critical patent/TW201007937A/zh
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Publication of TWI463645B publication Critical patent/TWI463645B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW098123132A 2008-07-09 2009-07-08 影像感測器中之彩色濾光片陣列對準標記形成 TWI463645B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/169,709 US8017426B2 (en) 2008-07-09 2008-07-09 Color filter array alignment mark formation in backside illuminated image sensors

Publications (2)

Publication Number Publication Date
TW201007937A TW201007937A (en) 2010-02-16
TWI463645B true TWI463645B (zh) 2014-12-01

Family

ID=41061313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098123132A TWI463645B (zh) 2008-07-09 2009-07-08 影像感測器中之彩色濾光片陣列對準標記形成

Country Status (7)

Country Link
US (2) US8017426B2 (https=)
EP (1) EP2304797B1 (https=)
JP (1) JP5427234B2 (https=)
KR (1) KR101351145B1 (https=)
CN (1) CN102077349A (https=)
TW (1) TWI463645B (https=)
WO (1) WO2010005555A1 (https=)

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US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US8896712B2 (en) * 2007-07-20 2014-11-25 Omnivision Technologies, Inc. Determining and correcting for imaging device motion during an exposure
US8350952B2 (en) * 2008-06-04 2013-01-08 Omnivision Technologies, Inc. Image sensors with improved angle response
US7859033B2 (en) 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors
US7915067B2 (en) * 2008-07-09 2011-03-29 Eastman Kodak Company Backside illuminated image sensor with reduced dark current
US20100006908A1 (en) * 2008-07-09 2010-01-14 Brady Frederick T Backside illuminated image sensor with shallow backside trench for photodiode isolation
US8224082B2 (en) * 2009-03-10 2012-07-17 Omnivision Technologies, Inc. CFA image with synthetic panchromatic image
US8068153B2 (en) * 2009-03-27 2011-11-29 Omnivision Technologies, Inc. Producing full-color image using CFA image
US8045024B2 (en) * 2009-04-15 2011-10-25 Omnivision Technologies, Inc. Producing full-color image with reduced motion blur
US8203633B2 (en) * 2009-05-27 2012-06-19 Omnivision Technologies, Inc. Four-channel color filter array pattern
US8237831B2 (en) * 2009-05-28 2012-08-07 Omnivision Technologies, Inc. Four-channel color filter array interpolation
US8125546B2 (en) * 2009-06-05 2012-02-28 Omnivision Technologies, Inc. Color filter array pattern having four-channels
US8253832B2 (en) * 2009-06-09 2012-08-28 Omnivision Technologies, Inc. Interpolation for four-channel color filter array
US8389922B2 (en) * 2010-08-04 2013-03-05 Himax Imaging, Inc. Sensing Devices and Manufacturing Methods Therefor
US8946083B2 (en) * 2011-06-24 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ formation of silicon and tantalum containing barrier
US8846494B2 (en) 2011-07-07 2014-09-30 Aptina Imaging Corporation Alignment marks and alignment methods for aligning backside components to frontside components in integrated circuits
US9269743B2 (en) 2013-11-21 2016-02-23 Semiconductor Components Industries, Llc Methods of forming imaging device layers using carrier substrates
FR3050831B1 (fr) * 2016-04-29 2018-04-27 Silios Technologies Dispositif d'imagerie multispectrale
EP3501112B1 (en) 2016-08-16 2021-09-22 IPCom GmbH & Co. KG Reuse of transmission resources for device to device communication
KR102530072B1 (ko) 2018-01-10 2023-05-08 삼성전자주식회사 이미지 센서, 촬상 장치 및 이미지 센서 칩 패키지의 제조 방법
WO2021189484A1 (zh) * 2020-03-27 2021-09-30 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置

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Also Published As

Publication number Publication date
JP2011527828A (ja) 2011-11-04
KR20110028649A (ko) 2011-03-21
TW201007937A (en) 2010-02-16
US20100006909A1 (en) 2010-01-14
JP5427234B2 (ja) 2014-02-26
US20110285880A1 (en) 2011-11-24
EP2304797A1 (en) 2011-04-06
WO2010005555A1 (en) 2010-01-14
CN102077349A (zh) 2011-05-25
KR101351145B1 (ko) 2014-01-14
US8017426B2 (en) 2011-09-13
EP2304797B1 (en) 2012-12-12

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