TWI462344B - A package structure of white light led with high efficiency - Google Patents
A package structure of white light led with high efficiency Download PDFInfo
- Publication number
- TWI462344B TWI462344B TW100145353A TW100145353A TWI462344B TW I462344 B TWI462344 B TW I462344B TW 100145353 A TW100145353 A TW 100145353A TW 100145353 A TW100145353 A TW 100145353A TW I462344 B TWI462344 B TW I462344B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- layer
- package structure
- white led
- led package
- Prior art date
Links
Landscapes
- Led Device Packages (AREA)
Description
本發明係有關於一種發光二極體封裝結構,其特別有關於一種將奈米金屬層披覆於螢光膠層上之高效率白光發光二極體封裝結構。The present invention relates to a light emitting diode package structure, and more particularly to a high efficiency white light emitting diode package structure in which a nano metal layer is coated on a phosphor layer.
發光二極體(Light Emitting Diodes,LED)乃是利用半導體等固體材料製作而成的光源系統,有別於真空或充填少量特殊氣體下操作的熱熾燈或各種氣體放電燈等傳統光源。白光LED光源與傳統光源相比較之下,其具有諸多優點,如:耗電量低、體積小、反應速度快、高效率、環保及可平面封裝等優勢;此外,在節能方面,其可使用的壽命長達60年,是傳統電燈泡的100倍;而就消耗的能量而言,白光LED只有傳統電燈泡的10%。因此,自高功率與高亮度LED成功發展以來,白光LED已被公認為21世紀最具潛力之環保照明光源。目前,白光LED的發光效率已達60-80 lm/W以上,在學術實驗方面更已達到100 lm/W。截至目前為止,發光二極體的發展有兩大方向,一為是提供高均勻度的白光,另一為是對高亮度的要求。然而,由於單顆LED亮度低於一般照明需求,因此期望藉由磊晶成長、晶粒製作及封裝技術的改良來提高光電轉換效率及外部光取出率,使LED的應用範圍更加廣泛。Light Emitting Diodes (LEDs) are light source systems made of solid materials such as semiconductors. They are different from traditional light sources such as heat lamps or various gas discharge lamps that operate under vacuum or with a small amount of special gas. Compared with traditional light sources, white LED light sources have many advantages, such as low power consumption, small size, fast response, high efficiency, environmental protection and flat packaging. In addition, in terms of energy saving, they can be used. It has a lifespan of 60 years and is 100 times that of traditional light bulbs. In terms of energy consumption, white LEDs are only 10% of conventional light bulbs. Therefore, since the successful development of high-power and high-brightness LEDs, white LEDs have been recognized as the most promising environmentally friendly lighting source in the 21st century. At present, the luminous efficiency of white LEDs has reached 60-80 lm/W or more, and has reached 100 lm/W in academic experiments. Up to now, the development of light-emitting diodes has two major directions, one is to provide high uniformity of white light, and the other is to require high brightness. However, since the brightness of a single LED is lower than the general lighting requirement, it is desirable to improve the photoelectric conversion efficiency and the external light extraction rate by the improvement of epitaxial growth, die fabrication, and packaging technology, so that the application range of the LED is wider.
傳統的LED封裝結構100,如第1圖係繪示一傳統的LED封裝結構100。發光元件130固定於一內壁塗佈有反射金屬層120的反射凹杯110中,並以金屬線(未繪示於圖上)連接發光元件的正負極,外層以環氧樹脂(Epoxy)層140包覆封裝,其中該環氧樹脂層係由一螢光粉150所混合而成。由於此種設計無法使光線集中,光的發射角度分散,因此會有許多光線未被充分利用到,提高亮度的效果有限。The conventional LED package structure 100, as shown in FIG. 1 , shows a conventional LED package structure 100. The light-emitting element 130 is fixed in a reflective concave cup 110 whose inner wall is coated with the reflective metal layer 120, and is connected to the positive and negative electrodes of the light-emitting element by a metal wire (not shown), and the outer layer is an epoxy resin (Epoxy) layer. The 140 encapsulation package is formed by mixing a phosphor powder 150. Since this design cannot concentrate the light and the light emission angle is dispersed, many light rays are not fully utilized, and the effect of improving the brightness is limited.
參照美國專利案第8,030,843號,其標題為“量子點螢光粉於固態照明設備之應用,Quantum dot phosphors for solid-state lighting devices”該專利揭示一種量子點螢光粉之特殊光學特性,並藉由控制量子點螢光粉之尺寸,以提高發光效率。然而,該種量子點螢光粉之製作複雜,且其提高亮度的效果有限。U.S. Patent No. 8,030,843, entitled "Quantum dot phosphors for solid-state lighting devices", discloses a special optical property of a quantum dot phosphor and borrows The size of the quantum dot phosphor powder is controlled to improve the luminous efficiency. However, this kind of quantum dot phosphor powder is complicated to produce, and its effect of improving brightness is limited.
有鑑於此,本發明之發明人乃細心研究,提出一種高效率白光LED封裝結構,主要係藉由將奈米金屬層披覆於螢光膠層上之應用,以形成高效率白光LED。其中該奈米金屬層係用以產生電漿效應,進而增加該螢光膠層之放光強度,且該螢光膠層係以塗佈法、轉印法、網印法及噴霧法形成於該透光基板之一面,用以達成一均勻之螢光膠層,並經由收集該反射層之反射光源,可與該螢光膠層混合形成高效率白光LED。需注意,本發明之該透鏡層具有散熱之特性。In view of this, the inventors of the present invention have carefully studied and proposed a high-efficiency white LED package structure, mainly by applying a nano metal layer on a phosphor layer to form a high-efficiency white LED. Wherein the nano metal layer is used to generate a plasma effect, thereby increasing the light-emitting intensity of the phosphor layer, and the phosphor layer is formed by a coating method, a transfer method, a screen printing method, and a spray method. One surface of the light-transmissive substrate is used to achieve a uniform phosphor layer, and the reflective light source collecting the reflective layer can be mixed with the phosphor layer to form a high-efficiency white LED. It should be noted that the lens layer of the present invention has the property of dissipating heat.
本發明之目的在提供一種高效率白光LED封裝結構,用以改善傳統白光LED封裝結構之發光效率、散熱及壽命問題。The object of the present invention is to provide a high efficiency white LED package structure for improving the luminous efficiency, heat dissipation and life of a conventional white LED package structure.
為達本發明之目的,本發明提出一種高效率白光LED封裝結構,其包含:一螢光膠層;一奈米金屬層;一發光晶片;一第一導電支架;一第二導電支架;一第一焊線;一第二焊線;一封裝基座;一反射層;以及一透鏡層。其中該螢光膠層係披覆於一透光基板之一面;該奈米金屬層係披覆於該螢光膠層之另一面,以產生表面電漿效應增加該螢光膠層之放光強度,其中該奈米金屬層之結晶顆粒係介於5奈米至60奈米之間,且其厚度係介於2奈米至30奈米之間;該發光晶片係固定於該透光基板之另一面,且其具有正負兩極;該第一導電支架係設置於該透光基板之一側;該第二導電支架係設置於該透光基板之另一側;該第一焊線係用以電性連接該第一導電支架與該發光晶片之正極;該第二焊線係用以電性連接該第二導電支架與該發光晶片之負極;該封裝基座係具有一半圓形凹槽,且其側邊係與該第一導電支架及該第二導電支架連接,用以封裝該發光晶片;該反射層係披覆於該半圓形凹槽之內壁,可提升該發光晶片之光使用率,其中該反射層可藉由反射該發光晶片所發出的光,進而與該螢光膠層反應,以形成白光;以及該透鏡層係用以填滿該凹槽,並提供一良好導熱效果。For the purpose of the present invention, the present invention provides a high efficiency white LED package structure comprising: a phosphor layer; a nano metal layer; a light emitting chip; a first conductive support; a second conductive support; a first bonding wire; a second bonding wire; a package base; a reflective layer; and a lens layer. Wherein the phosphor layer is coated on one side of a transparent substrate; the nano metal layer is coated on the other side of the phosphor layer to generate a surface plasma effect to increase the brightness of the phosphor layer The strength, wherein the nano metal layer has a crystal particle size of between 5 nm and 60 nm, and the thickness thereof is between 2 nm and 30 nm; the light emitting chip is fixed on the light transmissive substrate The other side of the first conductive support is disposed on one side of the transparent substrate; the second conductive support is disposed on the other side of the transparent substrate; the first bonding wire is used Electrically connecting the first conductive support to the positive electrode of the light-emitting chip; the second bonding wire is for electrically connecting the second conductive support and the negative electrode of the light-emitting chip; the package base has a semi-circular groove And the side of the first conductive support and the second conductive support are connected to encapsulate the light-emitting chip; the reflective layer is coated on the inner wall of the semi-circular groove to enhance the light-emitting chip Light usage, wherein the reflective layer can reflect light emitted by the luminescent wafer, To react with the fluorescent layer, to form white light; and a lens system for layer fills the groove and provides a good thermal effect.
根據本發明之封裝結構之一特徵,其中該奈米金屬層之消光係數在可見光範圍內係介於1.5至6.5。According to one feature of the package structure of the present invention, the extinction coefficient of the nanometal layer is between 1.5 and 6.5 in the visible range.
本發明之功效:The effect of the invention:
1. 利用奈米金屬層之材料特徵如:不同的厚度、結晶顆粒、載子濃度以及電阻率,使其產生不同的表面電漿效應。1. Use the material characteristics of the nano metal layer such as different thickness, crystal particles, carrier concentration and resistivity to produce different surface plasma effects.
2. 利用奈米金屬層之光學反應,將光作有效的利用,並經由收集該反射層之反射光源,與螢光膠層混合形成高效率白光LED,並藉以改善傳統白光LED封裝結構之散熱及壽命問題。2. Using the optical reaction of the nano metal layer, the light is effectively utilized, and the reflective light source collecting the reflective layer is mixed with the fluorescent glue layer to form a high-efficiency white LED, thereby improving the heat dissipation of the conventional white LED package structure. And life issues.
3. 藉由結合奈米金屬層與螢光膠層,增加螢光膠層之放光強度,用以改善傳統白光LED封裝結構之發光效率。3. By combining the nano metal layer and the phosphor layer, the light-emitting intensity of the phosphor layer is increased to improve the luminous efficiency of the conventional white LED package structure.
4. 提高亮度、增加光線投射距離:本發明之高效率白光LED封裝結構利用反射層之反射效果增強發光晶片的發光亮度,再藉由透鏡層之集中光束效果,使發光晶片射出之光束集中,進而達到提高亮度、增加光線投射距離的效果。4. Increasing the brightness and increasing the light projection distance: the high-efficiency white LED package structure of the invention enhances the light-emitting brightness of the light-emitting chip by using the reflection effect of the reflective layer, and then concentrates the light beam emitted by the light-emitting chip by the concentrated beam effect of the lens layer. In turn, the effect of increasing the brightness and increasing the light projection distance is achieved.
5. 廣泛的應用層面:本發明之高效率白光LED封裝結構除具備提高封裝體之外部光取出率的效果外,亦由於其適用於表面黏著製程、人工及機械組裝製程。因此,能與現有之封裝技術銜接,因而擴大其應用層面。5. Wide application level: The high-efficiency white LED package structure of the present invention not only has the effect of improving the external light extraction rate of the package, but also is suitable for the surface adhesion process, manual and mechanical assembly process. Therefore, it can be connected with existing packaging technologies, thus expanding its application level.
6. 利用簡單的鍍膜方式,將奈米金屬層披覆於螢光膠層之一面,除了可產生表面電漿效應之外,更可將表面電漿效應作一有效的運用,進而使螢光膠層之放光強度增加。6. Using a simple coating method, the nano metal layer is coated on one side of the phosphor layer, in addition to the surface plasma effect, the surface plasma effect can be effectively used to make the fluorescent The light-emitting intensity of the glue layer is increased.
7. 本發明所提出之奈米金屬層並不影響白光LED封裝結構的光穿透性。7. The nano metal layer proposed by the present invention does not affect the light transmittance of the white LED package structure.
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉數個較佳實施例,並配合所附圖式,作詳細說明如下。The above and other objects, features, and advantages of the present invention will become more apparent and understood.
雖然本發明可表現為不同形式之實施例,但附圖所示者及於下文中說明者係為本發明可之較佳實施例,並請了解本文所揭示者係考量為本發明之一範例,且並非意圖用以將本發明限制於圖示及/或所描述之特定實施例中。While the invention may be embodied in various forms, the embodiments illustrated in the drawings It is not intended to limit the invention to the particular embodiments illustrated and/or described.
現請參考第2圖,其顯示根據本發明實施例之一種高效率白光LED封裝結構200之示意圖。本發明所提出之高效率白光LED封裝結構200包含:一透光基板210;一螢光膠層220;一奈米金屬層221;一第一導電支架230;一第一焊線240;一反射層250;一透鏡層260;一發光晶片270;一封裝基座280;一第二焊線290;及一第二導電支架231。其中,第一導電支架230及第二導電支架231系以導電性佳之金屬如金、銀、銅、鐵、鋁及導電金屬合金所組成之一族群,係分別固定於透光基板210之兩側,用以與其他導電物連接。此外,透光基板210之材料可為玻璃材料及塑膠材料之一。Referring now to Figure 2, there is shown a schematic diagram of a high efficiency white LED package structure 200 in accordance with an embodiment of the present invention. The high efficiency white LED package structure 200 of the present invention comprises: a transparent substrate 210; a phosphor layer 220; a nano metal layer 221; a first conductive bracket 230; a first bonding wire 240; a layer 250; a lens layer 260; an illuminating wafer 270; a package pedestal 280; a second bonding wire 290; and a second conductive support 231. The first conductive support 230 and the second conductive support 231 are respectively grouped by a metal having good conductivity such as gold, silver, copper, iron, aluminum and a conductive metal alloy, and are respectively fixed on both sides of the transparent substrate 210. Used to connect with other conductive materials. In addition, the material of the transparent substrate 210 may be one of a glass material and a plastic material.
螢光膠層220係由一螢光材料與一封膠體所混合而成,覆蓋於透光基板210之一面,並經一熱處理過程,使螢光膠層220與透光基板210能緊密結合。其中,螢光材料之吸收及放射波段係在254nm到570nm之間,其係為一黃色釔鋁石榴石(YAG)、一黃色鋱鋁石榴石(TAG)、一黃色矽酸鹽(Silicate)、一硫化物(Sulfate)和一氮化物(Nitrate)之任一組合。The phosphor layer 220 is formed by mixing a phosphor material and a gel, covering one surface of the transparent substrate 210, and performing a heat treatment process to enable the phosphor layer 220 and the transparent substrate 210 to be tightly coupled. The absorption and emission bands of the fluorescent material are between 254 nm and 570 nm, and are yellow yttrium aluminum garnet (YAG), yellow yttrium aluminum garnet (TAG), and a yellow silicate (Silicate). Any combination of Sulfate and Nitrate.
發光晶片270係固定於透光基板210之另一面,其包含正負兩極,並以一第一焊線240電性連接於第一導電支架230與發光晶片270之正極,而第二焊線290則是用以電性連接第二導電支架231與該發光晶片270之負極。此外,發光晶片270更包含一承載基板,且基板所使用之材料可為藍寶石基板、玻璃基板及塑膠基板之一。The illuminating chip 270 is fixed on the other surface of the transparent substrate 210, and includes positive and negative poles, and is electrically connected to the anode of the first conductive bracket 230 and the illuminating wafer 270 by a first bonding wire 240, and the second bonding wire 290 is It is used to electrically connect the second conductive support 231 and the negative electrode of the light-emitting chip 270. In addition, the illuminating wafer 270 further includes a carrier substrate, and the material used for the substrate may be one of a sapphire substrate, a glass substrate, and a plastic substrate.
其中,本發明之封裝基座280內部具有一半圓形凹槽,且封裝基座280之側邊係與該第一導電支架230及該第二導電支架231連接。為了提升發光晶片270之光使用率,將反射層250披覆於該半圓形凹槽之內壁,並利用透鏡層260填滿該凹槽,以提供一良好導熱效果。其中,反射層250可藉由反射發光晶片270所發出的光,進而與螢光膠層220反應,以形成白光。The package base 280 of the present invention has a semi-circular recess inside, and the side of the package base 280 is connected to the first conductive bracket 230 and the second conductive bracket 231. In order to increase the light usage of the luminescent wafer 270, a reflective layer 250 is applied over the inner wall of the semi-circular recess and the recess is filled with the lens layer 260 to provide a good thermal conductivity. The reflective layer 250 can react with the phosphor layer 220 to reflect white light by reflecting the light emitted by the light-emitting chip 270.
需注意,反射層250係濺鍍一層具有高反射率之金屬材料於半圓形凹槽內壁上,其係選自於銀、金、鋁及金屬合金之一。而透鏡層260的部份,則是將一具有高透光性之導熱樹脂灌注於封裝基座280之半圓形凹槽內壁,其係選自於熱固型塑膠與熱塑型塑膠之一。透鏡層260之材料係選自環氧樹脂(Epoxy)、聚苯乙烯(Polystyrene;PS)、丙烯晴-丁二烯-苯乙烯聚合物(Acrylonitrile-Butadene-Styrene;ABS)、聚甲基丙烯酸甲酯(Polymethl methacylate;PMMA)、壓克力(Acrylicresin)、矽膠(Silicone)或上述之任意組合。需注意,透鏡層260之材料需經由一熱處理過程,方可使封裝基座280、發光晶片270及透光基板210能夠緊密接合。此外,透光基板210、螢光膠層220、透鏡層260的折射率需愈接近愈好,主要原因為較接近之折射率可避免光在封裝體內的損耗,進而提高封裝體之外部光取出率。It should be noted that the reflective layer 250 is sputtered with a metal material having a high reflectivity on the inner wall of the semicircular recess, which is selected from one of silver, gold, aluminum, and a metal alloy. The portion of the lens layer 260 is formed by injecting a thermally conductive resin having high light transmittance into the inner wall of the semicircular recess of the package base 280, which is selected from the group consisting of thermosetting plastics and thermoplastic plastics. One. The material of the lens layer 260 is selected from the group consisting of epoxy resin (Epoxy), polystyrene (PS), Acrylonitrile-Butadene-Styrene (ABS), polymethyl methacrylate Polymethl methacylate (PMMA), Acrylic Resin, Silicone or any combination of the above. It should be noted that the material of the lens layer 260 needs to be subjected to a heat treatment process so that the package base 280, the light-emitting chip 270, and the light-transmitting substrate 210 can be tightly joined. In addition, the refractive index of the transparent substrate 210, the fluorescent adhesive layer 220, and the lens layer 260 should be as close as possible, the main reason is that the relatively close refractive index can avoid the loss of light in the package, thereby improving the external light extraction of the package. rate.
較佳地,本發明所選用之螢光材料係為(Y2.95-a Ce0.05 Gda)(Al5-b Gab )O12 ,其中,Y、Ce、Gd、Al、Ga、O分別代表為釔、鍺、釓、鋁、鎵以及氧。需注意,Gd(釓)取代量a係介於0與3之間,Ga(鎵)取代量b係介於0與5之間,且螢光材料之顆粒大小係介於1至3微米之間。此外,用於螢光膠層220之材料,其激發光譜需在240~500奈米範圍內,而激發主峰位置在430奈米;發射光譜在450~600奈米範圍內,而發射主峰位置在512奈米,所得之發光效率為60%。Preferably, the fluorescent material selected for use in the present invention is (Y 2.95-a Ce 0.05 Gda)(Al 5-b Ga b )O 12 , wherein Y, Ce, Gd, Al, Ga, O are respectively represented as钇, 锗, 釓, aluminum, gallium and oxygen. It should be noted that the Gd(釓) substitution amount a is between 0 and 3, the Ga (gallium) substitution amount b is between 0 and 5, and the phosphor material has a particle size of 1 to 3 μm. between. In addition, the material used for the phosphor layer 220 needs to have an excitation spectrum in the range of 240 to 500 nm, and the excitation main peak position is 430 nm; the emission spectrum is in the range of 450 to 600 nm, and the emission main peak position is At 512 nm, the luminous efficiency obtained was 60%.
接著,將已經由矽烷偶合劑處理過的螢光材料以各種比率適量地混煉於環氧樹脂中,並以噴霧法塗佈至透光基板210之一面,以形成一均勻之螢光膠層220。為了使螢光膠層220與透光基板210能緊密結合,將塗佈完成之螢光膠層220置入80℃之烘箱中熱處理30分鐘,即可得到厚度介於80微米至100微米之間的螢光膠層220。Next, the phosphor material which has been treated with the decane coupling agent is kneaded in an appropriate amount in an epoxy resin in various ratios, and is spray-coated on one side of the light-transmitting substrate 210 to form a uniform phosphor layer. 220. In order to enable the phosphor layer 220 to be tightly bonded to the transparent substrate 210, the coated phosphor layer 220 is placed in an oven at 80 ° C for 30 minutes to obtain a thickness of between 80 μm and 100 μm. The fluorescent glue layer 220.
另外,利用表面黏著技術(Surface Mount Technology;SMT)在透光基板210之另一面印上環氧化物黏膠後,將發光波長為430奈米的發光晶片270放置於環氧化物黏膠上。接著,再以365奈米的UV光照射環氧化物,使其固化,即可將發光晶片270固定於透光基板210上。Further, after the epoxide adhesive was printed on the other surface of the light-transmitting substrate 210 by Surface Mount Technology (SMT), the light-emitting wafer 270 having an emission wavelength of 430 nm was placed on the epoxy adhesive. Next, the epoxide is irradiated with 365 nm of UV light to cure the luminescent wafer 270, and the luminescent wafer 270 is fixed to the transparent substrate 210.
需注意,本發明之奈米金屬層221係披覆於該螢光膠層220之另一面,以所具有之表面電漿效應增加該螢光膠層220之放光強度,其中該奈米金屬層221之結晶顆粒係介於5奈米至60奈米之間,且其厚度係介於2奈米至30奈米之間。較佳地,該奈米金屬層221之載子濃度係介於1022 cm-3 至1023 cm-3 ,且該奈米金屬層221之消光係數在可見光範圍內係介於1.5至6.5。此外,該奈米金屬層221係由奈米金屬粒子組成。It should be noted that the nano metal layer 221 of the present invention is coated on the other side of the phosphor layer 220 to increase the light-emitting intensity of the phosphor layer 220 by the surface plasma effect, wherein the nano metal The crystalline particles of layer 221 are between 5 nm and 60 nm and have a thickness between 2 nm and 30 nm. Preferably, the nano metal layer 221 has a carrier concentration of 10 22 cm -3 to 10 23 cm -3 , and the extinction coefficient of the nano metal layer 221 is between 1.5 and 6.5 in the visible light range. Further, the nano metal layer 221 is composed of nano metal particles.
其中奈米金屬粒子的熱力學特徵,例如:熔點、比熱等,還有電子結構、電學性質、光學特性、磁性、化學反應性,以及奈米金屬顆粒的自組裝(self-assembly)都會因為尺寸不同而改變。其中該奈米金屬粒子係選自鎳、金、鈷、銅、鋁、鈦及其合金之一。此外,由於奈米粒子是介於原子、分子與巨觀塊材(bulk materials)之間的過渡產物。在這個尺寸範圍裡,許多物理、化學性質都會與尺寸有關,尺寸大小成為在奈米材料科學與應用上重要的控制因素。Among them, the thermodynamic characteristics of nano metal particles, such as melting point, specific heat, etc., as well as electronic structure, electrical properties, optical properties, magnetic properties, chemical reactivity, and self-assembly of nano metal particles are all different in size. And change. Wherein the nano metal particles are selected from one of nickel, gold, cobalt, copper, aluminum, titanium and alloys thereof. In addition, because nanoparticle is a transition product between atoms, molecules and bulk materials. In this size range, many physical and chemical properties are related to size, which is an important controlling factor in the science and application of nanomaterials.
另外,隨著奈米粒子直徑變小,比表面積將會顯著增大,也就是表面原子數所佔的百分比將會顯著的增加,直徑10 nm的顆粒大約有15%的原子位在顆粒表面,而直徑1 nm的奈米粒子上幾乎所有的原子都是表面原子,一般來說表面積較高的奈米粒子會有較高的化學反應活性。奈米粒子表面的高原子數目造成表面活性的增加,可應用來發展觸媒微粒子及高效率催化劑。以奈米金屬粒子當成催化劑的異相反應觸媒,由於金屬表面才是反應活性位置,所以基本上顆粒越小可以反應的表面積越高,其反應活性會越高。In addition, as the diameter of the nanoparticle becomes smaller, the specific surface area will increase significantly, that is, the percentage of the number of surface atoms will increase significantly, and about 15% of the particles with a diameter of 10 nm are on the surface of the particle. While almost all atoms on the 1 nm diameter nanoparticle are surface atoms, generally higher surface area nanoparticles have higher chemical reactivity. The high atomic number on the surface of the nanoparticles causes an increase in surface activity and can be applied to develop catalyst particles and high efficiency catalysts. In the heterogeneous reaction catalyst in which the nano metal particles are used as a catalyst, since the metal surface is the reactive site, the smaller the particle size, the higher the surface area of the reaction, and the higher the reactivity.
舉例來說,奈米金粒子隨著粒徑越來越小,表面原子的比例大幅提高的情況。閃閃發亮的黃金,是金黃色並帶著金屬色澤的金屬,當它以奈米大小的形式存在時,光學性質會有極大的改變。隨著粒徑逐漸縮小,可以由肉眼清晰的看到顏色的變化,由黑色(約10 nm)到暗紅色(約30 nm)以至於到透明的紫色溶液(約100 nm)。For example, as the particle size of the nano-gold particles becomes smaller and smaller, the proportion of surface atoms greatly increases. Glittering gold is a golden yellow metal with a metallic color. When it exists in the form of nanometers, the optical properties will change dramatically. As the particle size shrinks, the color change can be clearly seen by the naked eye, from black (about 10 nm) to dark red (about 30 nm) to a clear purple solution (about 100 nm).
可分為物理方法與化學方法。在物理方法方面,可以有:Can be divided into physical methods and chemical methods. In terms of physical methods, there are:
此方法製作簡便且製備出的金屬膠體溶液較乾淨,但有不易控制奈米金屬粒子的形狀及大小,亦無法估計奈米金屬粒子的產量等缺點。製作方式是先將金屬材浸入溶劑中,再利用雷射聚焦轟擊金的表面即可生成。The method is simple in preparation and the prepared metal colloid solution is relatively clean, but it is difficult to control the shape and size of the nano metal particles, and it is impossible to estimate the yield of the nano metal particles. It is made by immersing the metal in a solvent and then bombarding the surface of the gold with a laser.
利用電極加熱金屬源,使得蒸鍍金屬蒸發出的金屬原子使沈積在基版上稱為蒸鍍;若是以氬離子轟擊金靶使表面發生發光放電現象(glow discharge),而表面金原子彈出後沈積於基板上稱為濺鍍。The metal source is heated by the electrode, so that the metal atom evaporated by the vapor deposition metal is deposited on the substrate as evaporation; if the gold target is bombarded with argon ions, the surface is glow discharge, and the surface gold atom is ejected. Depositing on a substrate is called sputtering.
奈米金屬粒子的化學製備方法種類甚多。以奈米金粒子為例,其化學製備方法如下:There are many types of chemical preparation methods for nano metal particles. Taking nano gold particles as an example, the chemical preparation method is as follows:
1. 直接還原法,在適當的條件下直接加還原劑還原溶液中的氯金酸。1. Direct reduction method, directly adding a reducing agent to reduce the chloroauric acid in the solution under appropriate conditions.
2. 化學氣相沈積,加熱分解揮發性金的化合物使金沈積於基版上。2. Chemical vapor deposition, which thermally decomposes volatile gold compounds to deposit gold on the substrate.
3. 電化學法,以金線為陽極,在含界面活性劑的電解液中反應,在陰極析出金粒子。3. Electrochemical method, using a gold wire as an anode, reacting in an electrolyte containing a surfactant, and depositing gold particles at the cathode.
4. 光化學法,以紫外光或γ射線照射分解水產生電子來還原氯金酸。4. Photochemical method, which decomposes water by ultraviolet light or gamma ray to generate electrons to reduce chloroauric acid.
5. 超聲波法,利用超音波使水分解產生的氫自由基還原氯金酸。5. Ultrasonic method, using ultrasonic waves to reduce the chloroauric acid by hydrogen radicals generated by water decomposition.
根據本發明之實施例中,該奈米金屬粒子係以直接還原法形成金塊形成,但須注意以其他金屬亦可形成奈米金屬粒子。所使用的藥品均為試藥級以上的純度,故使用前不再經過純化的步驟,其還原步驟為:According to an embodiment of the present invention, the nano metal particles are formed by direct reduction to form gold nuggets, but it should be noted that the other metal may also form nano metal particles. The drugs used are all above the purity of the reagent grade, so the purification step is not used before use, and the reduction steps are:
1. 取1ml的HNO3 (濃度為70%)與3 ml的HCl(濃度為37%)配製成王水。1. Take 1 ml of HNO 3 (70% concentration) and 3 ml of HCl (37% concentration) to make aqua regia.
2. 將0.2089g的金錠溶解於配製的王水中,經超音波震盪使其完全溶解。2. Dissolve 0.2089 g of gold ingot in the prepared aqua regia and completely dissolve by ultrasonic vibration.
3. 再利用一公升的去離子水將該溶液稀釋。3. Dilute the solution with one liter of deionized water.
4. 最後將所稀釋之溶液加熱,並加入適量的檸檬酸鈉(Na3 (C6 H5 O7 )當還原劑,再劇烈攪拌還原。4. Finally, the diluted solution is heated, and an appropriate amount of sodium citrate (Na 3 (C 6 H 5 O 7 ) is added as a reducing agent, followed by vigorous stirring to reduce.
5. 將還原之奈米金粒子溶液滴到該螢光膠層220上,使奈米金粒溶液完全鍍覆於該螢光膠層220,藉由奈米金粒子自組裝的性質分散到該螢光膠層220的表面上。5. The reduced nano gold particle solution is dropped onto the phosphor layer 220, and the nano gold particle solution is completely plated on the phosphor layer 220, and dispersed by the self-assembly property of the nano gold particles to the firefly. On the surface of the photoresist layer 220.
6. 將已旋塗在該螢光膠層220之奈米金粒子烘乾。6. Dry the nano gold particles that have been spin coated onto the phosphor layer 220.
其中,封裝基座280係由射出成形製備成型,且其內部具有一半圓形凹槽。於較佳實施例中,所選用的反射層250材料為銀,主要係由濺鍍方式製作於半圓形凹槽中,以作為反射層250。透鏡層260的材料係選用環氧樹脂,利用點膠方式將環氧樹脂注入半圓形凹槽中。Wherein, the package base 280 is formed by injection molding, and has a semicircular groove inside. In a preferred embodiment, the selected reflective layer 250 is made of silver and is primarily formed by sputtering in a semi-circular recess as the reflective layer 250. The material of the lens layer 260 is epoxy resin, and the epoxy resin is injected into the semicircular groove by dispensing.
最後,將已製備好之發光晶片270、螢光膠層220及透光基板210組裝至封裝基座280上。經由後段包裝和測試後,即可完成整個白光LED裝置。在本實施例中,主要係藉由反射層250之金屬反射效果將光線反射,使光線集中於透鏡層260的半徑範圍內,並經由混合螢光膠層220之反應形成白光向外部射出。因此,本發明之高效率白光LED封裝結構,除了可使光線均勻集中在中央部份外,亦增加白光LED裝置之整體出光量。Finally, the prepared luminescent wafer 270, the phosphor layer 220 and the transparent substrate 210 are assembled onto the package pedestal 280. After the packaging and testing in the back section, the entire white LED device can be completed. In this embodiment, the light is mainly reflected by the metal reflection effect of the reflective layer 250, and the light is concentrated in the radius of the lens layer 260, and the white light is emitted to the outside through the reaction of the mixed phosphor layer 220. Therefore, the high-efficiency white LED package structure of the present invention not only allows the light to be uniformly concentrated in the central portion, but also increases the overall light output of the white LED device.
現請參考第3圖,其顯示根據本發明實施例之一種高效率白光LED封裝結構200之另一實施例。其與上述實施例之差別僅在於該奈米金屬層221與該螢光膠層220之間更包含一高分子薄膜,用以隔開該奈米金屬層221與該螢光膠層220,且該高分子薄膜可用以幫助該奈米金屬層221披覆於該螢光膠層220之均勻性。其中,該奈米金屬層221與該螢光膠層220之間的距離係介於2奈米至20奈米之間Referring now to Figure 3, there is shown another embodiment of a high efficiency white LED package structure 200 in accordance with an embodiment of the present invention. The difference from the above embodiment is that the nano metal layer 221 and the phosphor layer 220 further comprise a polymer film for separating the nano metal layer 221 and the phosphor layer 220, and The polymer film can be used to help the nano metal layer 221 to be coated on the uniformity of the phosphor layer 220. Wherein, the distance between the nano metal layer 221 and the phosphor layer 220 is between 2 nm and 20 nm.
<實施例一><Example 1>
該奈米金屬層221之厚度約為5奈米,奈米金屬粒子的數量控制在少量的範圍時,可使該螢光膠層220之放光效果增加1.2倍,進而使白光LED的效率提升1倍。The thickness of the nano metal layer 221 is about 5 nm, and when the number of the nano metal particles is controlled to a small range, the light-emitting effect of the phosphor layer 220 can be increased by 1.2 times, thereby improving the efficiency of the white LED. 1 times.
<實施例二><Embodiment 2>
該奈米金屬層221之厚度約為10奈米,奈米金屬粒子的數量控制在少量的範圍時,可使該螢光膠層220之放光效果增加1.5倍,甚至超越該螢光膠層220原本的量子效率,進而使白光LED的效率提升1.3倍。The thickness of the nano metal layer 221 is about 10 nm, and when the number of the nano metal particles is controlled to a small range, the light-emitting effect of the phosphor layer 220 can be increased by 1.5 times, even beyond the phosphor layer. 220 original quantum efficiency, which in turn makes the efficiency of white LEDs 1.3 times.
<實施例三><Example 3>
該奈米金屬層221之厚度約為15奈米,且該高分子薄膜之厚度係為2奈米。其中該高分子薄膜之厚度係用以決定奈米金屬粒子的數量多寡,及其披覆於該螢光膠層220之均勻性,進而使該螢光膠層220之放光效果增加2倍,藉以使白光LED的效率提升1.6倍。The thickness of the nano metal layer 221 is about 15 nm, and the thickness of the polymer film is 2 nm. The thickness of the polymer film is used to determine the amount of the nano metal particles, and the uniformity of the coating on the phosphor layer 220, thereby increasing the light-emitting effect of the phosphor layer 220 by a factor of two. In order to increase the efficiency of white LEDs by 1.6 times.
由上述本發明之較佳實施例可知,應用本發明具有下列優點。It will be apparent from the above-described preferred embodiments of the present invention that the application of the present invention has the following advantages.
1. 利用奈米金屬層221之材料特徵如:不同的厚度、結晶顆粒、載子濃度以及電阻率,使其產生不同的表面電漿效應。1. Using the material characteristics of the nano metal layer 221 such as different thicknesses, crystal particles, carrier concentration, and resistivity to produce different surface plasma effects.
2. 利用奈米金屬層221之光學反應,將光作有效的利用,並經由收集該反射層250之反射光源,與螢光膠層220混合形成高效率白光LED,並藉以改善傳統白光LED封裝結構100之散熱及壽命問題。2. Using the optical reaction of the nano metal layer 221, the light is effectively utilized, and the reflective light source collecting the reflective layer 250 is mixed with the fluorescent glue layer 220 to form a high-efficiency white LED, thereby improving the conventional white LED package. The heat dissipation and life of the structure 100.
3. 藉由結合奈米金屬層221與螢光膠層220,增加螢光膠層220之放光強度,用以改善傳統白光LED封裝結構100之發光效率。3. By combining the nano metal layer 221 and the phosphor layer 220, the light-emitting intensity of the phosphor layer 220 is increased to improve the luminous efficiency of the conventional white LED package structure 100.
4. 提高亮度、增加光線投射距離:本發明之高效率白光LED封裝結構200利用反射層250之反射效果增強發光晶片270的發光亮度,再藉由透鏡層260之集中光束效果,使發光晶片270射出之光束集中,進而達到提高亮度、增加光線投射距離的效果。4. Increasing the brightness and increasing the light projection distance: the high efficiency white LED package structure 200 of the present invention enhances the light emission brightness of the light emitting chip 270 by the reflection effect of the reflective layer 250, and then the light emitting chip 270 is made by the concentrated beam effect of the lens layer 260. The beam of light is concentrated, thereby achieving the effect of increasing brightness and increasing the distance of light projection.
5. 廣泛的應用層面:本發明之高效率白光LED封裝結構200除具備提高封裝體之外部光取出率的效果外,亦由於其適用於表面黏著製程、人工及機械組裝製程。因此,能與現有之封裝技術銜接,因而擴大其應用層面。5. Wide application level: The high-efficiency white LED package structure 200 of the present invention has the effects of improving the external light extraction rate of the package, and is also suitable for surface adhesion process, manual and mechanical assembly processes. Therefore, it can be connected with existing packaging technologies, thus expanding its application level.
雖然本發明已以前述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與修改。如上述的解釋,都可以作各型式的修正與變化,而不會破壞此發明的精神。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described in its preferred embodiments, it is not intended to limit the scope of the invention, and various modifications and changes can be made without departing from the spirit and scope of the invention. As explained above, various modifications and variations can be made without departing from the spirit of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100...傳統的LED封裝結構100. . . Traditional LED package structure
110...反射凹杯110. . . Reflection concave cup
120...反射金屬層120. . . Reflective metal layer
130...發光元件130. . . Light-emitting element
140...環氧樹脂層140. . . Epoxy layer
150...螢光粉150. . . Fluorescent powder
200...高效率白光LED封裝結構200. . . High efficiency white LED package structure
210...透光基板210. . . Light transmissive substrate
220...螢光膠層220. . . Fluorescent layer
221...奈米金屬層221. . . Nano metal layer
222...高分子薄膜222. . . Polymer film
230...第一導電支架230. . . First conductive bracket
240...第一焊線240. . . First wire bond
231...第二導電支架231. . . Second conductive bracket
250...反射層250. . . Reflective layer
260...透鏡層260. . . Lens layer
270...發光晶片270. . . Light emitting chip
280...封裝基座280. . . Package base
290...第二焊線290. . . Second wire
為了讓本發明之上述和其他目的、特徵、和優點能更明顯,下文特舉本發明較佳實施例,並配合所附圖示,作詳細說明如下:The above and other objects, features, and advantages of the present invention will become more apparent from the <RTIgt;
圖1顯示為傳統的LED封裝結構示意圖;Figure 1 shows a schematic diagram of a conventional LED package structure;
圖2顯示為本發明之高效率白光LED封裝結構示意圖;以及2 is a schematic view showing the structure of a high efficiency white LED package of the present invention;
圖3顯示為本發明之高效率白光LED封裝結構示意圖之另一實施例。FIG. 3 shows another embodiment of the high efficiency white LED package structure of the present invention.
200...高效率白光LED封裝結構200. . . High efficiency white LED package structure
210...透光基板210. . . Light transmissive substrate
220...螢光膠層220. . . Fluorescent layer
230...第一導電支架230. . . First conductive bracket
240...第一焊線240. . . First wire bond
250...反射層250. . . Reflective layer
221...奈米金屬層221. . . Nano metal layer
260...透鏡層260. . . Lens layer
270...發光晶片270. . . Light emitting chip
280...封裝基座280. . . Package base
290...第二焊線290. . . Second wire
231...第二導電支架231. . . Second conductive bracket
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100145353A TWI462344B (en) | 2011-12-08 | 2011-12-08 | A package structure of white light led with high efficiency |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100145353A TWI462344B (en) | 2011-12-08 | 2011-12-08 | A package structure of white light led with high efficiency |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201324867A TW201324867A (en) | 2013-06-16 |
TWI462344B true TWI462344B (en) | 2014-11-21 |
Family
ID=49033148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100145353A TWI462344B (en) | 2011-12-08 | 2011-12-08 | A package structure of white light led with high efficiency |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI462344B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11181778B2 (en) | 2018-02-12 | 2021-11-23 | Au Optronics Corporation | Display device comprising a dichroic reflection layer having a plurality of recessed portions disposed with a corresponding plurality of quantum dot blocks |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI557370B (en) * | 2013-09-03 | 2016-11-11 | Light emitting device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200908371A (en) * | 2007-08-03 | 2009-02-16 | Univ Nat Taiwan | Fabricating method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof |
TWM391722U (en) * | 2010-05-03 | 2010-11-01 | Ru-Yuan Yang | Packing structure of white light-emitting diode with high efficiency |
CN202030697U (en) * | 2011-01-29 | 2011-11-09 | 陈哲艮 | Light intensified photoluminescence sheet and light intensified luminous diode |
-
2011
- 2011-12-08 TW TW100145353A patent/TWI462344B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200908371A (en) * | 2007-08-03 | 2009-02-16 | Univ Nat Taiwan | Fabricating method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof |
TWM391722U (en) * | 2010-05-03 | 2010-11-01 | Ru-Yuan Yang | Packing structure of white light-emitting diode with high efficiency |
CN202030697U (en) * | 2011-01-29 | 2011-11-09 | 陈哲艮 | Light intensified photoluminescence sheet and light intensified luminous diode |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11181778B2 (en) | 2018-02-12 | 2021-11-23 | Au Optronics Corporation | Display device comprising a dichroic reflection layer having a plurality of recessed portions disposed with a corresponding plurality of quantum dot blocks |
Also Published As
Publication number | Publication date |
---|---|
TW201324867A (en) | 2013-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104091890B (en) | A kind of organic luminescent device, organic light-emitting display device | |
CN107342353B (en) | A kind of focusing ultraviolet LED encapsulating structure and preparation method thereof | |
US20090230417A1 (en) | Light emitting diode package structure and method for fabricating the same | |
TW200845435A (en) | Optoelectronic component for emitting electromagnetic radiation and method of manufacturing an optoelectronic component | |
CN102154010B (en) | Photo-enhancement photoluminescence material as well as preparation method and application thereof | |
CN104465895B (en) | LED chip and preparation method thereof | |
TW200952222A (en) | Semiconductor light-emitting device as well as light source device and lighting system including the same | |
JP2008218511A (en) | Semiconductor light emitting device and method formanufacturing the same | |
WO2014008418A1 (en) | Optical enhancement of light emitting devices | |
CN203983342U (en) | A kind of organic luminescent device, organic light-emitting display device | |
CN102683555A (en) | Packaging structure and packaging method for light-emitting diode | |
JP2004119147A (en) | Light emitting module, substrate for it, and member for it | |
TWI462344B (en) | A package structure of white light led with high efficiency | |
TWI307178B (en) | Package structure of led | |
CN203192844U (en) | Light emitting diode packaging structure | |
CN103354266A (en) | Thin type wafer lever LED (Light-Emitting Diode) packaging structure and method | |
CN101140963A (en) | Method for enhancing upside-down mounting welding core plate brightness | |
Kwon et al. | Plasmonic-enhanced luminescence characteristics of microscale phosphor layers on a ZnO nanorod-arrayed glass substrate | |
CN103700749A (en) | Light-emitting diode and manufacturing method thereof | |
CN207353289U (en) | A kind of LED encapsulation structure and automobile dimming-distance lighting system for improving light efficiency | |
CN103489997B (en) | Led | |
CN106848032B (en) | A kind of LED device structure of wafer-level packaging | |
JP2012064728A (en) | Light source device | |
US20100320490A1 (en) | Light emitting diode packaging structure | |
CN202030697U (en) | Light intensified photoluminescence sheet and light intensified luminous diode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |