TWI462199B - 凸塊結構及其製作方法 - Google Patents

凸塊結構及其製作方法 Download PDF

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Publication number
TWI462199B
TWI462199B TW099144947A TW99144947A TWI462199B TW I462199 B TWI462199 B TW I462199B TW 099144947 A TW099144947 A TW 099144947A TW 99144947 A TW99144947 A TW 99144947A TW I462199 B TWI462199 B TW I462199B
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Taiwan
Prior art keywords
bump
opening
layer
metal layer
forming
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TW099144947A
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English (en)
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TW201227848A (en
Inventor
Chung Pang Chi
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Chipmos Technologies Inc
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Publication date
Application filed by Chipmos Technologies Inc filed Critical Chipmos Technologies Inc
Priority to TW099144947A priority Critical patent/TWI462199B/zh
Priority to CN201110043248.2A priority patent/CN102543895B/zh
Priority to US13/225,488 priority patent/US8697566B2/en
Publication of TW201227848A publication Critical patent/TW201227848A/zh
Application granted granted Critical
Publication of TWI462199B publication Critical patent/TWI462199B/zh

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Description

凸塊結構及其製作方法
本發明是有關於一種半導體結構及其製作方法，且特別是有關於一種凸塊結構及其製作方法。
半導體製程中，預備用作覆晶封裝體的晶圓結構必須於晶圓結構的每一焊墊上形成導電用的凸塊(bump)，例如焊料凸塊、金凸塊、銅凸塊、導電高分子凸塊、高分子凸塊等，以負責傳遞電子訊號。由於電場作用於凸塊而產生電遷移(Electro-migration)的應力(亦即以金屬材料製成的凸塊在傳導電流時，其原子會沿著材料本身的晶粒邊界而往電子流動的方向移動)會使得凸塊的截面積縮小，最終導致凸塊的斷路。所以，必須於凸塊與焊墊之間先形成一球底金屬層(under bump metallurgic layer，UBM layer)以提高凸塊與焊墊之間的接合強度，並防止電遷移的現象。
然而，由於習知之球底金屬層僅配置於凸塊的下方，因此當球底金屬層與凸塊之間或是球底金屬層與位於焊墊上方之保護層之間產生裂縫時，便容易出現所謂的底切效應(under cut effect)。再者，由於凸塊必須具有相當的高度，以便於電性連接至電路板或其他承載器，因此，若採用的凸塊為金凸塊時，其高度越高則製造成本越高。此外，若以銅凸塊來取代金凸塊時，雖然可降低製造成本，但因銅容易產生氧化現象，而易導致凸塊與球底金屬之間的接合可靠度降低的問題產生。
本發明提供一種凸塊及其製作方法，可改善底切效應且具有較佳的接合可靠度。
本發明提出一種凸塊的製作方法。首先，提供一基板。基板具有至少一焊墊與一保護層，其中保護層具有至少一第一開口以將焊墊暴露。在保護層上形成一絕緣層，其中絕緣層具有至少一第二開口，且第二開口位於第一開口上方。於絕緣層上形成一金屬層，其中金屬層透過第一開口以及第二開口與焊墊電性連接。於第一開口以及第二開口內形成一第一凸塊。於第一凸塊與部分金屬層上形成一第二凸塊。以第二凸塊為罩幕，移除部分未被第二凸塊所覆蓋之金屬層以形成至少一球底金屬層，其中第一凸塊被球底金屬層以及第二凸塊完全包覆。
在本發明之一實施例中，上述之形成第一凸塊的步驟，包括：於絕緣層上形成一第一圖案化光阻層，其中第一圖案化光阻層具有對應第二開口的至少一第三開口，第三開口的孔徑與第二開口的孔徑實質上相同，且第三開口暴露出位於第一開口與第二開口內的部分金屬層。形成第一凸塊於第一開口與第二開口內，其中第一凸塊填充第一開口與第二開口，且部分金屬層位於第一凸塊與絕緣層之間。移除第一圖案化光阻層，以暴露出部分位於第一圖案化光阻層下方的金屬層。
在本發明之一實施例中，上述之於形成第二凸塊於第一凸塊上之前，形成一鎳層於第一凸塊上。
在本發明之一實施例中，上述之鎳層是於移除第一圖案化光阻層之前形成於第一凸塊上。
在本發明之一實施例中，上述之鎳層是於移除第一圖案化光阻層之後形成於第一凸塊上。
在本發明之一實施例中，上述之鎳層延伸配置於第二凸塊與位於絕緣層上之部分金屬層之間。
在本發明之一實施例中，上述形成第二凸塊的步驟，包括：形成一第二圖案化光阻層於絕緣層上之部分金屬層上，其中第二圖案化光阻層具有對應第二開口的至少一第四開口，第四開口暴露出位於第一開口與第二開口內的第一凸塊以及位於絕緣層上的部分金屬層。在第四開口內形成第二凸塊，其中第二凸塊疊置於第一凸塊上。移除第二圖案化光阻層，以暴露出部分位於第二圖案化光阻層下方的金屬層。
本發明提出一種凸塊結構，適於配置於一基板上。基板上具有至少一焊墊與一保護層，其中保護層具有至少第一開口，且第一開口暴露出部分焊墊。凸塊結構包括一絕緣層、一球底金屬層、一第一凸塊以及一第二凸塊。絕緣層配置於保護層上，且具有至少一第二開口，其中第二開口暴露出部分保護層與部分焊墊。球底金屬層配置於部分絕緣層上、第一開口內以及第二開口內，其中球底金屬層覆蓋第一開口的內壁、第二開口的內壁以及第二開口所暴露出的部分保護層。第一凸塊填充於第一開口與第二開口內，且部分球底金屬層位於第一凸塊與絕緣層之間。第二凸塊疊置於第一凸塊上，且覆蓋第一凸塊，其中部分第二凸塊延伸至部分位於絕緣層上之球底金屬層上。
在本發明之一實施例中，上述第一凸塊為銅凸塊，而第二凸塊為金凸塊。
在本發明之一實施例中，上述凸塊結構更包括一鎳層，配置於第一凸塊與第二凸塊之間。
在本發明之一實施例中，上述鎳層的底面積大於或等於第二開口的孔徑面積。
在本發明之一實施例中，上述第一凸塊的頂面為平面。
在本發明之一實施例中，上述第二凸塊的底面積大於第二開口的孔徑面積。
基於上述，由於本發明之第一凸塊完全被球底金屬層以及第二凸塊所包覆，而球底金屬層被絕緣層所包覆，且位於絕緣層上之部分球底金屬層亦被第二凸塊所覆蓋，因此本發明之凸塊結構較不易產生底切效應，且凸塊與球底金屬層之間具有較佳的接合可靠度。
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
圖1為本發明之一實施例之一種凸塊結構的剖面示意圖。請參考圖1，在本實施例中，凸塊結構100a適於配置於一基板10上，其中基板10上具有至少一焊墊12(圖1中僅示意地繪示二個)與一保護層14。詳細來說，保護層14具有至少第一開口16(圖1中僅示意地繪示二個)，且第一開口16暴露出部分焊墊12。此外，基板10例如是一電路板或一晶圓，而焊墊12的材質例如是鋁、銅或其他適當的金屬。
本實施例之凸塊結構100a包括一絕緣層110、一球底金屬層120、一第一凸塊130以及一第二凸塊140，其中圖1中示意地繪示兩個凸塊結構100a。更具體來說，絕緣層110配置於保護層14上，且絕緣層110具有至少一第二開口112(圖1中僅示意地繪示二個)，其中第二開口112暴露出部分保護層14與部分焊墊12，且第二開口112的孔徑大於第一開口16的孔徑。球底金屬層120配置於部分絕緣層110上、第一開口16內以及第二開口112內，其中球底金屬層120覆蓋第一開口16的內壁、第一開口16所暴露出之部分焊墊12、第二開口112的內壁以及第二開口12所暴露出的部分保護層14。
第一凸塊130填充於第一開口16與第二開口112內，由於該球底金屬層120覆蓋第一開口16及第二開口112的內壁，使得部分球底金屬層120位於第一凸塊130與絕緣層110之間。特別是，本實施例之第一凸塊130的高度小於第二開口112的深度，且第一凸塊130例如是一銅凸塊。在此必須說明的是，第一凸塊130具有一略小於第一開口16孔徑的第一寬度W1以及一略小於第二開口112孔徑的第二寬度W2，其中第二寬度W2大於第一寬度W1。第二凸塊140疊置於第一凸塊130上且覆蓋第一凸塊130頂面，其中部分第二凸塊140延伸至部分位於絕緣層110上之球底金屬層120上，而部分第二凸塊140位於第二開口112內且連接第一凸塊130。此外，本實施例之第二凸塊140例如是金凸塊。在此必須說明的是，於其他實施例中，第一凸塊130與第二凸塊140的材質亦可以是其他是適當的金屬材質，例如第一凸塊130亦可是鈀，而第二凸塊的材質是金，在此並不加以限制。
由於凸塊結構100a的第一凸塊130完全被球底金屬層120與第二凸塊140所包覆，因此凸塊結構100a較不易產生底切效應。再者，由於銅材質之第一凸塊130被球底金屬層120與金材質之第二凸塊140完全包覆，而球底金屬層120被絕緣層110所包覆，且配置於絕緣層110上之部分球底金屬層120亦被第二凸塊140所覆蓋，因此可有效避免產生金屬氧化的情形，可提高第一凸塊130及第二凸塊140與球底金屬層120之間的接合可靠度。此外，相較於習知技術，由於凸塊結構100a並非完全採用金凸塊，而是採用銅材質之第一凸塊130與金材質之第二凸塊140疊置所組成之凸塊，因此可有效降低製造成本。
以下將以一實施例配合圖2A至圖2I來詳細說明上述之凸塊結構100a的製作方法。
圖2A至圖2I為本發明之一實施例之一種凸塊結構的製作方法的剖面示意圖。請先參考圖2A，本實施例的凸塊結構的製作方法包括以下步驟。首先，提供一基板10，其中基板10具有至少一焊墊12與一保護層14。保護層14具有至少一第一開口16(圖2A中僅示意地繪示二個)以將焊墊12暴露。基板10例如是一電路板或一晶圓，而焊墊12的材質例如是鋁、銅或其他適當的金屬。
接著，請參考圖2B，在保護層14上形成一絕緣層110，其中絕緣層110具有至少一第二開口112(圖2A中僅示意地繪示二個)，且第二開口112位於第一開口16上方。在本實施例中，第二開口112的孔徑實質上大於第一開口16的孔徑。
接著，請參考圖2C，於絕緣層110上形成一金屬層125，其中金屬層125透過第一開口16以及第二開口112與焊墊12電性連接。其中形成金屬層125的方法可以是濺鍍製程、物理氣相沈積製程或化學氣相沈積製程。
接著，請參考圖2D，於絕緣層110上形成一第一圖案化光阻層160，其中第一圖案化光阻層160具有對應第二開口112的至少一第三開口162(圖2D中僅示意地繪示兩個)，第三開口162的孔徑與第二開口112的孔徑實質上相同，且第三開口162暴露出位於第一開口16與第二開口112內的部分金屬層125。
接著，請參考圖2E，形成一第一凸塊130於第一開口16與第二開口112內，其中第一凸塊130填充第一開口16與第二開口112，且部分金屬層125位於第一凸塊130與絕緣層110之間。在本實施例中，第一凸塊130的高度小於第二開口112的深度，其中第一凸塊130例如是一銅凸塊。此外，形成第一凸塊130的方法例如是電鍍製程。
接著，請參考圖2F，移除第一圖案化光阻層160，以暴露出部分位於第一圖案化光阻層160下方的金屬層125。
接著，請再參考圖2F，形成一第二圖案化光阻層170於絕緣層110上之部分金屬層125上，其中第二圖案化光阻層170具有對應第二開口112的至少一第四開口172(圖2F中僅示意地繪示二個)，且第四開口174暴露出位於第一開口16與第二開口112內的第一凸塊130以及位於絕緣層110上的部分金屬層125。
接著，請再參考圖2F，於第四開口172內形成第二凸塊140，其中第二凸塊140疊置於第一凸塊130上，且第二凸塊140的底面積大於第二開口112的孔徑面積。詳細來說，部分第二凸塊140位於第二開口112內且覆蓋第一凸塊130，而位於第二開口112外的部分第二凸塊140覆蓋部分位於絕緣層110上的金屬層125。在本實施例中，第二凸塊140具有一略小於第二開口112孔徑的第三寬度W3以及一大於第二開口112孔徑的第四寬度W4，其中在此所定義之第二凸塊140的底面積是以第四寬度W4為寬度所定義之面積。此外，本實施例之第二凸塊140例如是金凸塊，而形成第二凸塊140的方法例如是電鍍製程。
然後，請參考圖2G，移除第二圖案化光阻層170，以暴露出部分位於第二圖案化光阻層170下方的金屬層125。
最後，請參考圖2H，以第二凸塊140為罩幕，移除部分未被第二凸塊140所覆蓋之金屬層125以形成至少一球底金屬層120(圖2H中僅示意地繪示兩個)，其中第一凸塊130被球底金屬層120以及第二凸塊140完全包覆。至此，以完成凸塊結構100a的製作。
此外，這些凸塊結構100a彼此相鄰間具有一絕緣層110，此絕緣層110圍繞於這些凸塊結構100a的周圍，其中絕緣層110可防止彼此相鄰間之凸塊的電遷移及凸塊底部之球底金屬層120之氧化，以及於日後與外部元件接合時可提供一緩衝效果。
另，本實施例可更進一步的以第二凸塊140為罩幕，移除部分未被第二凸塊140及球底金屬層120所覆蓋之絕緣層110，以使每一凸塊結構100a’周圍均形成有單一個之絕緣層110’(圖2I中僅示意地繪示兩個)，其中此絕緣層110’為一中空的絕緣管狀體。
以下將以幾個不同之實施例來說明凸塊結構及其製造方法。在此必須說明的是，下述實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重複贅述。
圖3為本發明之一實施例之另一種凸塊結構的剖面示意圖。請參考圖3，圖3之凸塊結構100b與圖1之凸塊結構100a相似，其不同之處在於：圖3之凸塊結構100b更包括一鎳層150b，其中鎳層150b配置於第一凸塊130b與第二凸塊140b之間。詳細來說，在本實施例中，第一凸塊130b的高度大於第二開口112的深度，意即第一凸塊130b突出於第二開口112外，而鎳層150b覆蓋第一凸塊130b的頂面132且連接球底金屬層120，第一凸塊130b受到球底金屬層120與鎳層150b完全包覆。
於實施如第三圖所示之製程時，本實施例之凸塊結構100b的製作方法可採用與圖2A至圖2H之凸塊結構100a大致相同的製作方式，其中於圖2D之步驟時，第一凸塊130b形成突出於第二開口112外，並於圖2E之步驟時，即移除第一圖案化光阻層160之後，形成鎳層150b於第一凸塊130b上與球底金屬層120連接。之後，再進行圖2F之形成第二圖案化光阻層170與第二凸塊140b的步驟以及圖2G至圖2H的步驟，即可完成凸塊結構100b的製作。
圖4為本發明之一實施例之另一種凸塊結構的剖面示意圖。請參考圖4，圖4之凸塊結構100c與圖3之凸塊結構100b相似，其不同之處在於：圖4之凸塊結構100c之鎳層150c的位置配置。詳細來說，鎳層150c覆蓋第一凸塊130c的頂面132c，且鎳層150c位於第二開口112內，其中鎳層150c遠離第一凸塊130c的表面實質上低於或切齊絕緣層110不與保護層14接觸的表面。鎳層150c的底面積略等於第二開口112的孔徑面積。
於製程時，本實施例之凸塊結構100c的製作方法可採用與圖2A至圖2H之凸塊結構100a大致相同的製作方式，其中於圖2E之步驟時，即於形成第一凸塊130c之後且於移除第一圖案化光阻層160之前，形成鎳層150c於第一凸塊130c上。之後，再進行圖2F之形成第二圖案化光阻層170與第二凸塊140c的步驟以及圖2G至圖2H的步驟，即可完成凸塊結構100c的製作。
圖5為本發明之一實施例之再一種凸塊結構的剖面示意圖。請參考圖5，圖5之凸塊結構100d與圖3之凸塊結構100b相似，其不同之處在於：圖5之凸塊結構100d之鎳層150d的位置配置。詳細來說，鎳層150d覆蓋第一凸塊130d的頂面132d且延伸配置於第二凸塊140與位於絕緣層110上之部分球底金屬層120之間。其中，鎳層150d的底面積大於第二開口112的孔徑面積。
於製程時，本實施例之凸塊結構100d的製作方法可採用與圖2A至圖2H之凸塊結構100a大致相同的製作方式，其中於圖2F之步驟時，即於形成第二圖案化光阻層170之後，形成鎳層150d於第一凸塊130d上。之後，再進行圖2F之形成第二圖案化光阻層170與第二凸塊140d的步驟以及圖2G至圖2H的步驟，即可完成凸塊結構100d的製作。
綜上所述，由於凸塊結構的第一凸塊完全被球底金屬層與第二凸塊所包覆，而球底金屬層被絕緣層所包覆，且位於絕緣層上之部分球底金屬層亦被第二凸塊所覆蓋，因此本發明之凸塊結構除了較不易產生底切效應之外，亦可效避免產生金屬氧化的情形，可提高凸塊與球底金屬層之間的接合可靠度。此外，相較於習知技術，由於凸塊結構並非完全採用金材質，因此可有效降低製造成本。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10．．．基板
12．．．焊墊
14．．．保護層
16．．．第一開口
100a、100a’、100b、100c、100d．．．凸塊結構
110、110’．．．絕緣層
112．．．第二開口
120．．．球底金屬層
125．．．金屬層
130、130b、130c、130d．．．第一凸塊
132、132b、132c、132d．．．頂面
140、140b、140c、140d．．．第二凸塊
150b、150c、150d．．．鎳層
160．．．第一圖案化光阻層
162．．．第三開口
170．．．第二圖案化光阻層
172．．．第四開口
W1．．．第一寬度
W2．．．第二寬度
W3．．．第三寬度
W4．．．第四寬度
圖1為本發明之一實施例之一種凸塊結構的剖面示意圖。
圖2A至圖2I為本發明之一實施例之一種凸塊結構的製作方法的剖面示意圖。
圖3為本發明之一實施例之另一種凸塊結構的剖面示意圖。
圖4為本發明之一實施例之另一種凸塊結構的剖面示意圖。
圖5為本發明之一實施例之再一種凸塊結構的剖面示意圖。
10．．．基板
12．．．焊墊
14．．．保護層
16．．．第一開口
100a．．．凸塊結構
110．．．絕緣層
112．．．第二開口
120．．．球底金屬層
130．．．第一凸塊
132．．．頂面
140．．．第二凸塊
W1．．．第一寬度
W2．．．第二寬度

Claims (13)

  1. 一種凸塊結構的製作方法，包括：提供一基板，該基板具有至少一焊墊與一保護層，其中該保護層具有至少一第一開口以將該焊墊暴露；在該保護層上形成一絕緣層，其中該絕緣層具有至少一第二開口，且該第二開口位於該第一開口上方；於該絕緣層上形成一金屬層，其中該金屬層透過該第一開口以及該第二開口與該焊墊電性連接；於該第一開口以及該第二開口內形成一第一凸塊；於該第一凸塊與部分該金屬層上形成一第二凸塊，其中該第一凸塊的高度小於該第二開口的深度；以及以該第二凸塊為罩幕，移除部分未被該第二凸塊所覆蓋之該金屬層以形成至少一球底金屬層，其中該第一凸塊被該球底金屬層以及該第二凸塊完全包覆。
  2. 如申請專利範圍第1項所述之凸塊結構的製作方法，其中形成該第一凸塊的步驟，包括：於該絕緣層上形成一第一圖案化光阻層，其中該第一圖案化光阻層具有對應該第二開口的至少一第三開口，該第三開口的孔徑與該第二開口的孔徑實質上相同，且該第三開口暴露出位於該第一開口與該第二開口內的部分該金屬層；形成該第一凸塊於該第一開口與該第二開口內，其中該第一凸塊填充該第一開口與該第二開口，且部分該金屬層位於該第一凸塊與該絕緣層之間；以及 移除該第一圖案化光阻層，以暴露出部分位於該第一圖案化光阻層下方的該金屬層。
  3. 如申請專利範圍第2項所述之凸塊結構的製作方法，更包括：於形成該第二凸塊於該第一凸塊上之前，形成一鎳層於該第一凸塊上。
  4. 如申請專利範圍第3項所述之凸塊結構的製作方法，其中該鎳層是於移除該第一圖案化光阻層之前形成於該第一凸塊上。
  5. 如申請專利範圍第3項所述之凸塊結構的製作方法，其中該鎳層是於移除該第一圖案化光阻層之後形成於該第一凸塊上。
  6. 如申請專利範圍第5項所述之凸塊結構的製作方法，其中該鎳層延伸配置於該第二凸塊與位於該絕緣層上之部分該金屬層之間。
  7. 如申請專利範圍第1項所述之凸塊結構的製作方法，其中形成該第二凸塊的步驟，包括：形成一第二圖案化光阻層於該絕緣層上之部分該金屬層上，其中該第二圖案化光阻層具有對應該第二開口的至少一第四開口，該第四開口暴露出位於該第一開口與該第二開口內的該第一凸塊以及位於該絕緣層上的部分該金屬層；在該第四開口內形成該第二凸塊，其中該第二凸塊疊置於該第一凸塊上；以及 移除該第二圖案化光阻層，以暴露出部分位於該第二圖案化光阻層下方的該金屬層。
  8. 一種凸塊結構，適於配置於一基板上，該基板上具有至少一焊墊與一保護層，其中該保護層具有至少第一開口，且該第一開口暴露出部分該焊墊，該凸塊結構包括：一絕緣層，配置於該保護層上，且具有至少一第二開口，其中該第二開口暴露出部分該保護層與部分該焊墊；一球底金屬層，配置於部分該絕緣層上、該第一開口內以及該第二開口內，其中該球底金屬層覆蓋該第一開口的內壁、該第二開口的內壁以及該第二開口所暴露出的部分該保護層；一第一凸塊，填充於該第一開口與該第二開口內，且部分該球底金屬層位於該第一凸塊與該絕緣層之間，其中該第一凸塊的高度小於該第二開口的深度；以及一第二凸塊，疊置於該第一凸塊上，且覆蓋該第一凸塊，其中部分該第二凸塊延伸至部分位於該絕緣層上之該球底金屬層上。
  9. 如申請專利範圍第8項所述之凸塊結構，其中該第一凸塊為銅凸塊，而該第二凸塊為金凸塊。
  10. 如申請專利範圍第8項所述之凸塊結構，更包括一鎳層，配置於該第一凸塊與該第二凸塊之間。
  11. 如申請專利範圍第10項所述之凸塊結構，其中該鎳層的底面積大於或等於該第二開口的孔徑面積。
  12. 如申請專利範圍第8項所述之凸塊結構，其中該 第二凸塊的底面積大於該第二開口的孔徑面積。
  13. 一種凸塊結構，適於配置於一基板上，該基板上具有至少一焊墊與一保護層，其中該保護層具有至少第一開口，且該第一開口暴露出部分該焊墊，該凸塊結構包括：一中空絕緣管狀體，配置於該保護層上，且具有至少一第二開口，其中該第二開口暴露出部分該保護層與部分該焊墊；一球底金屬層，配置於部分該中空絕緣管狀體上、該第一開口內以及該第二開口內，其中該球底金屬層覆蓋該第一開口的內壁、該第二開口的內壁以及該第二開口所暴露出的部分該保護層；一第一凸塊，填充於該第一開口與該第二開口內，且部分該球底金屬層位於該第一凸塊與該中空絕緣管狀體中，其中該第一凸塊的高度小於該第二開口的深度；以及一第二凸塊，疊置於該第一凸塊上，且覆蓋該第一凸塊，其中部分該第二凸塊延伸至部分位於該中空絕緣管狀體上之該球底金屬層上，且該第二凸塊的側邊與該中空絕緣管狀體的側邊實質上切齊。
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TW200849422A (en) * 2007-06-04 2008-12-16 Advanced Semiconductor Eng Wafer structure and method for fabricating the same

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