TWI458851B - System and method for producing carbon nanotubes - Google Patents

System and method for producing carbon nanotubes Download PDF

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TWI458851B
TWI458851B TW096100454A TW96100454A TWI458851B TW I458851 B TWI458851 B TW I458851B TW 096100454 A TW096100454 A TW 096100454A TW 96100454 A TW96100454 A TW 96100454A TW I458851 B TWI458851 B TW I458851B
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substrate
reaction chamber
carbon nanotube
manufacturing
catalyst
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TW096100454A
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TW200728492A (en
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Sung-Soo Kim
Suk-Won Jang
Suk-Min Choi
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Korea Kumho Petrochem Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • H01Q1/244Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas extendable from a housing along a given path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/08Means for collapsing antennas or parts thereof
    • H01Q1/10Telescopic elements
    • H01Q1/103Latching means; ensuring extension or retraction thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/125Means for positioning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/02Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system using mechanical movement of antenna or antenna system as a whole
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/06Details
    • H01Q9/14Length of element or elements adjustable

Description

製造碳奈米管的系統及其方法System and method for manufacturing carbon nanotubes

本發明是針對製造碳奈米管之系統及其方法。The present invention is directed to systems for making carbon nanotubes and methods therefor.

碳奈米管是碳原子之空心圓筒。碳奈米管的外觀為石墨軋管,使得其側壁為六角碳環且其常以大束形成。The carbon nanotube is a hollow cylinder of carbon atoms. The appearance of the carbon nanotubes is a graphite tube such that the side walls are hexagonal carbon rings and they are often formed in large bundles.

在根據結構擁有金屬導電性以及半導體導電性之情況下,碳奈米管現為應用於諸如電化儲存裝置(例如,二次電池或超電容器)的電極、電磁屏蔽、場發射顯示器或氣體感測器之各種技術領域的頭號候選者。Carbon nanotubes are now used for electrodes such as electrochemical storage devices (eg, secondary batteries or ultracapacitors), electromagnetic shielding, field emission displays, or gas sensing, given metal conductivity and semiconductor conductivity depending on the structure. The number one candidate in various technical fields.

技術問題technical problem

一般而言,碳奈米管(carbon nanotube,CNT)之製造量較小,此是因為仍用手來負責執行其大部分製造步驟,包括將CNT合成基板裝載於反應管上/自反應管卸載CNT合成基板之步驟,以及自反應管卸載基板以擷取來自其之CNT的步驟。因此,難以執行連續製程以及大量製造。In general, the production of carbon nanotubes (CNTs) is small because it is still responsible for performing most of its manufacturing steps by hand, including loading or unloading the CNT composite substrate onto the reaction tube. The step of synthesizing the substrate by the CNT, and the step of unloading the substrate from the reaction tube to extract CNTs therefrom. Therefore, it is difficult to perform continuous processes as well as mass production.

技術解決方案Technical solution

本發明之例示性實施例是針對製造碳奈米管之系統。在例示性實施例中,系統可包括:反應室,其中執行在合成基板上製造碳奈米管之製程;台部分,其安置於反應室的一側且具備用於將合成基板裝載至反應室/自反應室卸載合成基板之第一輸送體;以及基板容納部分,其中容納待裝載至反應室之基板或自反應室卸載的合成基板在其中等待。An exemplary embodiment of the invention is directed to a system for making carbon nanotubes. In an exemplary embodiment, the system may include: a reaction chamber in which a process of manufacturing a carbon nanotube on a synthetic substrate is performed; a stage portion disposed on one side of the reaction chamber and provided for loading the synthetic substrate into the reaction chamber a first transport body that unloads the synthetic substrate from the reaction chamber; and a substrate accommodating portion in which the synthetic substrate that is to be loaded to the substrate or unloaded from the reaction chamber is waited.

在另一例示性實施例中,系統可包括:反應室,其中執行在合成基板上製造碳奈米管之製程;台部分,其安置於反應室的一側且具備用於將合成基板裝載至反應室/自反應室卸載合成基板之第一輸送體;第一輸送體,其安裝於台部分內部,用於將合成基板裝載至反應室/自反應室卸載合成基板;基板容納部分,其中容納待裝載至反應室之基板或自反應室卸載的合成基板在其中等待;擷取部分,其用於自基板容納部分取出合成基板,以擷取合成基板上所製造之碳奈米管;催化劑塗覆單元,其經組態用於在將合成基板容納於台部分之基板容納部分中前以催化劑塗覆合成基板;以及第二輸送體,其用於在擷取部分與基板容納部分之間以及在催化劑塗覆單元與基板容納部分之間輸送合成基板。In another exemplary embodiment, a system may include: a reaction chamber in which a process of manufacturing a carbon nanotube on a synthetic substrate is performed; a stage portion disposed on one side of the reaction chamber and provided for loading the composite substrate to a reaction chamber/removal of a first transport body of the synthetic substrate from the reaction chamber; a first transport body installed inside the stage portion for loading the synthetic substrate to the reaction chamber/unloading the composite substrate from the reaction chamber; and a substrate housing portion in which the substrate is accommodated a substrate to be loaded into the reaction chamber or a synthetic substrate unloaded from the reaction chamber is waited therein; a drawing portion for taking out the synthetic substrate from the substrate receiving portion to extract the carbon nanotubes produced on the synthetic substrate; a cover unit configured to coat the composite substrate with a catalyst before accommodating the composite substrate in the substrate receiving portion of the stage portion; and a second transport body for being used between the scooping portion and the substrate receiving portion and A synthetic substrate is transported between the catalyst coating unit and the substrate receiving portion.

本發明之例示性實施例是針對製造碳奈米管之方法。在例示性實施例中,方法可包括:以催化劑塗覆合成基板;將塗覆有催化劑的基板裝載至反應室;將源氣供應至反應室,以將碳奈米管與合成基板進行合成;自反應室卸載處理之基板;在預定溫度下冷卻卸載之合成基板;以及自冷卻合成基板擷取碳奈米管。An exemplary embodiment of the invention is directed to a method of making a carbon nanotube. In an exemplary embodiment, the method may include: coating a synthetic substrate with a catalyst; loading a substrate coated with a catalyst into a reaction chamber; supplying a source gas to the reaction chamber to synthesize the carbon nanotube with the synthetic substrate; The substrate is unloaded from the reaction chamber; the unloaded synthetic substrate is cooled at a predetermined temperature; and the carbon nanotube is taken from the cooled synthetic substrate.

有利效應Favorable effect

如至此所描述,本發明具有以下優點:(1)可以自動製造碳奈米管;(2)可以大量製造碳奈米管;(3)因為連續維持反應室的製程,所以合成基板之碳奈米管得以連續合成以提高系統操作速率;(4)自動精確地供應催化劑以提高製程可靠度;以及(5)自動擷取碳奈米管以精確地計算製造速率。As described so far, the present invention has the following advantages: (1) carbon nanotubes can be automatically manufactured; (2) carbon nanotubes can be manufactured in large quantities; (3) carbon nanotubes of synthetic substrates can be synthesized because the process of the reaction chamber is continuously maintained. The rice tubes are continuously synthesized to increase the operating rate of the system; (4) automatically and accurately supply the catalyst to improve process reliability; and (5) automatically pick up the carbon nanotubes to accurately calculate the manufacturing rate.

現將參看展示本發明之較佳實施例的附圖在下文中較全面地描述本發明。然而,可以許多不同形式體現本發明且不應將其解釋為限於本文所闡明之實施例。而是,提供此等實施例,使得此揭露案將為詳盡且完整的,且將本發明之範疇全面地傳達至熟習此項技術者。在圖式中,出於清晰起見誇示了層及區域的厚度。本文中相同數字標示相同元件。The invention will now be described more fully hereinafter with reference to the accompanying claims However, the invention may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention will be fully disclosed to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. The same numbers in the text designate the same elements.

圖1中說明用於製造碳奈米管之系統1的實例。系統1包括合成基板10、反應室100以及預/後處理室。An example of a system 1 for making a carbon nanotube is illustrated in FIG. System 1 includes a composite substrate 10, a reaction chamber 100, and a pre/post processing chamber.

合成基板10用作底板,其中合成碳奈米管(CNT)。CNT合成基板可為矽晶圓、氧化銦錫(indium tin oxide,ITO)基板、ITO塗覆玻璃、鹼石灰玻璃、康寧玻璃(corning glass)以及氧化鋁。然而,可使用其他材料,只要其具有足以合成(生長、製造)碳奈米管之強度。The composite substrate 10 is used as a substrate in which a carbon nanotube (CNT) is synthesized. The CNT composite substrate may be a germanium wafer, an indium tin oxide (ITO) substrate, an ITO coated glass, a soda lime glass, a corning glass, and an alumina. However, other materials may be used as long as they have sufficient strength to synthesize (grind, manufacture) carbon nanotubes.

提供反應室100來執行在合成基板10上製造碳奈米管之製程。提供預/後處理室以針對裝載於反應室100上/自反應室100卸載的合成基板執行預處理製程以及後處理製程。預處理製程以及後處理製程包括在合成基板上塗覆催化劑20之製程,以及擷取在合成基板上所形成之碳奈米管的製程。預/後處理室包括台部分200、第一輸送體300、基板容納部分400、催化劑塗覆單元500、擷取部分600以及第二輸送體700。The reaction chamber 100 is provided to perform a process of manufacturing a carbon nanotube on the synthetic substrate 10. A pre/post processing chamber is provided to perform a pre-treatment process and a post-treatment process for the composite substrate loaded on/unloaded from the reaction chamber 100. The pretreatment process and the post-treatment process include a process of coating the catalyst 20 on a synthetic substrate, and a process of drawing a carbon nanotube formed on the synthetic substrate. The pre/post processing chamber includes a stage portion 200, a first transport body 300, a substrate housing portion 400, a catalyst coating unit 500, a scooping portion 600, and a second transport body 700.

提供台部分200以用於防止自反應室100卸載之合成基板暴露於空氣中。第一輸送體300將合成基板裝載於反應室100上/自反應室100卸載合成基板。提供基板容納部分400以用於容納裝載於反應室100上/自反應室100卸載之合成基板。提供催化劑塗覆單元500以用於在將合成基板10裝載於反應室100上前在合成基板10上塗覆催化劑20。提供擷取部分600以用於自合成基板10擷取自反應室100卸載之合成基板10上所製造的碳奈米管。第二輸送體700在基板容納部分400與催化劑塗覆單元500之間以及基板容納部分400與擷取部分600之間輸送合成基板10。The stage portion 200 is provided for preventing exposure of the composite substrate unloaded from the reaction chamber 100 to the air. The first transport body 300 loads the synthetic substrate on the reaction chamber 100/unloads the synthetic substrate from the reaction chamber 100. A substrate accommodating portion 400 is provided for accommodating a composite substrate loaded on/unloaded from the reaction chamber 100. A catalyst coating unit 500 is provided for coating the catalyst 20 on the synthetic substrate 10 before loading the composite substrate 10 onto the reaction chamber 100. A scooping portion 600 is provided for extracting the carbon nanotubes produced on the synthetic substrate 10 unloaded from the reaction chamber 100 from the synthetic substrate 10. The second transport body 700 transports the synthetic substrate 10 between the substrate housing portion 400 and the catalyst coating unit 500 and between the substrate housing portion 400 and the scooping portion 600.

在例示性實施例中,台部分200與反應室100並置。台部分200具有經安置鄰近於反應室100的第一區域240,以及經安置與第一區域240相對之第二區域260。在第一區域240內安置基板容納部分400,且在第二區域260內安置第一輸送體300。線性安置反應室100以及第二區域260。第一區域240具有頂部區域242以及底部區域244。頂部區域242與反應室100以及第二區域260線性安置。底部區域244在垂直於第二方向42之第一方向44中自頂部區域244延伸。第一區域240以及第二區域260分別具有矩形形式。歸因於以上提及之結構,台部分200整體具有“”形狀。在與第二區域方向42平行的方向中,基於第一區域240之頂部區域242,催化劑塗覆單元500、擷取部分600以及第二輸送體700經安置鄰近於台部分200,且在與底部區域244相對之位置處經並置。在與台部分200之第一區域240相對的位置處安置第二輸送體700。此外,在催化劑塗覆單元500與擷取部分600之間夾入第二輸送體700。與以上所述不同,可不同地修改台部分200之形狀,以及台部分200、第一輸送體700、催化劑塗覆單元500、擷取部分600的安置。In the exemplary embodiment, stage portion 200 is juxtaposed with reaction chamber 100. The stage portion 200 has a first region 240 disposed adjacent to the reaction chamber 100 and a second region 260 disposed opposite the first region 240. The substrate housing portion 400 is disposed within the first region 240, and the first conveyor body 300 is disposed within the second region 260. The reaction chamber 100 and the second region 260 are linearly disposed. The first region 240 has a top region 242 and a bottom region 244. The top region 242 is linearly disposed with the reaction chamber 100 and the second region 260. The bottom region 244 extends from the top region 244 in a first direction 44 that is perpendicular to the second direction 42. The first area 240 and the second area 260 each have a rectangular form. Due to the structure mentioned above, the stage portion 200 as a whole has " In the direction parallel to the second region direction 42, the catalyst coating unit 500, the scooping portion 600, and the second transporting body 700 are disposed adjacent to the table portion 200 based on the top region 242 of the first region 240, and The juxtaposition is juxtaposed at a position opposite to the bottom portion 244. The second transport body 700 is disposed at a position opposite to the first region 240 of the table portion 200. Further, sandwiching between the catalyst application unit 500 and the scooping portion 600 The second transport body 700. Unlike the above, the shape of the stage portion 200 can be modified differently, as well as the placement of the table portion 200, the first transport body 700, the catalyst coating unit 500, and the scooping portion 600.

現將詳細地在下文中描述根據本發明之系統的元件。The elements of the system according to the invention will now be described in detail below.

參看圖1,反應室100包括反應管120、第一及第二凸緣132以及134、加熱單元140、冷卻構件150、舟皿160。反應管120由諸如石英或石墨之防熱材料製成。一般而言,反應管120具有圓柱體形狀。在製程期間,可藉由加熱單元140將反應室120維持在攝氏500度至攝氏1,100度之範圍內的溫度。Referring to FIG. 1, the reaction chamber 100 includes a reaction tube 120, first and second flanges 132 and 134, a heating unit 140, a cooling member 150, and a boat 160. The reaction tube 120 is made of a heat-proof material such as quartz or graphite. In general, the reaction tube 120 has a cylindrical shape. During the process, the reaction chamber 120 can be maintained at a temperature in the range of 500 degrees Celsius to 1,100 degrees Celsius by the heating unit 140.

第一凸緣132為碟形凸緣,其與反應室120之前端耦接。第二凸緣134與反應室120之後端耦接。氣體供應構件180連接至第一凸緣132,用於將源氣供應至反應管120中。氣體供應構件180包括氣體供應源182、氣體供應管184以及加熱單元186。氣體供應管184與第一凸緣132耦接,將源氣自氣體供應源182供應至反應管120中。源氣可為由下列各物組成之族群中選出的至少一者:乙炔、乙烯、甲烷、苯、二甲苯、一氧化碳以及二氧化碳。在氣體供應管184上安裝閥門184a用於開關氣體供應管184之內部路徑,或控制源氣之流動速率。在氣體供應管184處安裝加熱單元186用於在將源氣供應至反應管120中前將源氣加熱直到設定溫度。歸因於加熱單元186,可減少活化反應管120中之源氣所需要的時間。從而,可減少整個製程時間。在藉由熱解活化後,源氣與合成基板10上塗覆之催化劑起反應以產生碳奈米管。排氣線189與第二凸緣134耦接用於在反應後排放反應管120內部剩餘之氣體。The first flange 132 is a dished flange that is coupled to the front end of the reaction chamber 120. The second flange 134 is coupled to the rear end of the reaction chamber 120. The gas supply member 180 is coupled to the first flange 132 for supplying source gas into the reaction tube 120. The gas supply member 180 includes a gas supply source 182, a gas supply pipe 184, and a heating unit 186. The gas supply pipe 184 is coupled to the first flange 132 to supply source gas from the gas supply source 182 into the reaction tube 120. The source gas may be at least one selected from the group consisting of acetylene, ethylene, methane, benzene, xylene, carbon monoxide, and carbon dioxide. A valve 184a is mounted on the gas supply pipe 184 for switching the internal path of the gas supply pipe 184 or controlling the flow rate of the source gas. A heating unit 186 is installed at the gas supply pipe 184 for heating the source gas to a set temperature before supplying the source gas into the reaction tube 120. Due to the heating unit 186, the time required to activate the source gas in the reaction tube 120 can be reduced. Thereby, the entire process time can be reduced. After activation by pyrolysis, the source gas reacts with the catalyst coated on the synthetic substrate 10 to produce a carbon nanotube. The exhaust line 189 is coupled to the second flange 134 for discharging the gas remaining inside the reaction tube 120 after the reaction.

在第一凸緣132以及反應管120的接觸表面處以及在第二凸緣134以及反應管120之接觸表面處分別安裝密封構件132a以及134a,用於自外部密封反應管120之內部。密封構件132a以及134a中的每一者可為O形環且藉由冷卻構件冷卻。冷卻構件包括冷卻線152、冷卻水供應管156以及感測器158。在第一以及第二凸緣132以及134內部形成冷卻線152。冷卻流體沿冷卻線152流動。冷卻流體為冷卻水。或者,冷卻流體可為惰性氣體。沿冷卻線152流動之冷卻水冷卻密封構件132a以及134a,以防止反應管120內部之熱損壞密封構件132a以及134a。Sealing members 132a and 134a are respectively installed at the contact surfaces of the first flange 132 and the reaction tube 120 and at the contact surfaces of the second flange 134 and the reaction tube 120 for sealing the inside of the reaction tube 120 from the outside. Each of the sealing members 132a and 134a may be an O-ring and cooled by a cooling member. The cooling member includes a cooling line 152, a cooling water supply pipe 156, and a sensor 158. Cooling lines 152 are formed inside the first and second flanges 132 and 134. The cooling fluid flows along the cooling line 152. The cooling fluid is cooling water. Alternatively, the cooling fluid can be an inert gas. The cooling water flowing along the cooling line 152 cools the sealing members 132a and 134a to prevent heat inside the reaction tube 120 from damaging the sealing members 132a and 134a.

參看圖2,冷卻水供應管156以及冷卻水擷取管(未圖示)與冷卻線152耦接。在冷卻水供應管156上安裝閥門156a,用於開關冷卻水供應管156之內部路徑或控制沿其內部路徑流動之冷卻水的流動速率。在冷卻水供應管156處安裝感測器158,用於量測沿冷卻水供應管156之內部路徑流動之冷卻水的流動速率或溫度。將藉由感測器158所量測之信號傳輸至控制器159,用於控制整個系統。控制器159分析自感測器158所傳輸之信號。當分析結果為冷卻水的流動速率或溫度不在設定時間之設定範圍內時,控制器159停止系統或經由顯示器或警報聲來通知使用者此事實。此使密封構件132a以及134a能夠在預定時間週期內連續執行製程,即使冷卻水暫時未以設定流動速率或設定溫度流經冷卻水供應管156。決定以上提及之設定時間,其考慮到當冷卻水未繼續平穩被供應時影響密封構件132a以及134a所需要的時間。Referring to FIG. 2, a cooling water supply pipe 156 and a cooling water dip tube (not shown) are coupled to the cooling line 152. A valve 156a is installed on the cooling water supply pipe 156 for switching the internal path of the cooling water supply pipe 156 or controlling the flow rate of the cooling water flowing along the internal path thereof. A sensor 158 is installed at the cooling water supply pipe 156 for measuring the flow rate or temperature of the cooling water flowing along the internal path of the cooling water supply pipe 156. The signal measured by the sensor 158 is transmitted to the controller 159 for controlling the entire system. Controller 159 analyzes the signals transmitted from sensor 158. When the analysis result is that the flow rate or temperature of the cooling water is not within the set range of the set time, the controller 159 stops the system or notifies the user of this fact via the display or the alarm sound. This enables the sealing members 132a and 134a to continuously perform the process for a predetermined period of time even if the cooling water is temporarily not flowing through the cooling water supply pipe 156 at the set flow rate or the set temperature. The set time mentioned above is decided, taking into account the time required to affect the sealing members 132a and 134a when the cooling water is not continuously supplied smoothly.

加熱單元140以製程溫度加熱反應管120之內部。安裝加熱單元140,以圍繞反應管120的外壁。可藉由加熱旋管(heating coil)或加熱燈來進行加熱反應管120。The heating unit 140 heats the inside of the reaction tube 120 at a process temperature. The heating unit 140 is installed to surround the outer wall of the reaction tube 120. The reaction tube 120 can be heated by heating a heating coil or a heat lamp.

圖3說明根據本發明之例示性實施例之包括加熱單元140的反應室100。出於描述之便利起見,將反應管120中鄰近於第一以及第二凸緣132以及134之區域分別稱作邊緣區域122a以及122b。此外,將邊緣區域122a與122b之間的區域稱作中心區域124。當藉由一個加熱單元加熱反應管120之整個區域時,邊緣區域122a以及122b的加熱溫度低於中心區域124之加熱溫度。此是因為邊緣區域122a以及122b受凸緣132以及134處所安裝之冷卻線152影響。因此,因為必須將合成基板僅提供至反應管120的中心區域124來以同一溫度執行合成基板10之製程,所以反應管120較長。FIG. 3 illustrates a reaction chamber 100 including a heating unit 140 in accordance with an exemplary embodiment of the present invention. For convenience of description, the regions of the reaction tube 120 adjacent to the first and second flanges 132 and 134 are referred to as edge regions 122a and 122b, respectively. Further, the area between the edge regions 122a and 122b is referred to as a central region 124. When the entire area of the reaction tube 120 is heated by a heating unit, the heating temperatures of the edge regions 122a and 122b are lower than the heating temperature of the central portion 124. This is because the edge regions 122a and 122b are affected by the cooling lines 152 installed at the flanges 132 and 134. Therefore, since the synthetic substrate must be supplied only to the central region 124 of the reaction tube 120 to perform the process of synthesizing the substrate 10 at the same temperature, the reaction tube 120 is long.

如圖3中說明,加熱單元140包括邊緣加熱器142、中心加熱器144以及加熱控制器146。邊緣加熱器142加熱邊緣區域122a以及122b,且中心加熱器144加熱中心區域124。加熱控制器146獨立控制中心加熱器144以及邊緣加熱器142。邊緣加熱器142以高於中心加熱器144的溫度來加熱反應管120,使得在反應管120內部等效地提供溫度。邊緣加熱器142包括用於加熱鄰近於第一凸緣132之邊緣區域122a的第一加熱器142a,以及用於加熱鄰近於第二凸緣134之邊緣區域122b的第二加熱器142b,此有利於在反應管120之邊緣區域122a與122b之間存在溫差的情況。在此情況中,加熱控制器146獨立控制第一加熱器142a以及第二加熱器142b。As illustrated in FIG. 3, the heating unit 140 includes an edge heater 142, a center heater 144, and a heating controller 146. The edge heater 142 heats the edge regions 122a and 122b, and the center heater 144 heats the central region 124. The heating controller 146 independently controls the center heater 144 and the edge heater 142. The edge heater 142 heats the reaction tube 120 at a temperature higher than that of the center heater 144 such that the temperature is equivalently supplied inside the reaction tube 120. The edge heater 142 includes a first heater 142a for heating an edge region 122a adjacent to the first flange 132, and a second heater 142b for heating an edge region 122b adjacent to the second flange 134, which is advantageous There is a case where there is a temperature difference between the edge regions 122a and 122b of the reaction tube 120. In this case, the heating controller 146 independently controls the first heater 142a and the second heater 142b.

可將至少一個舟皿160提供至反應管120之內部。舟皿160具有足夠的尺寸,使得可在反應管120之長度方向(以上提及之第二方向42)中將多個合成基板10裝載於舟皿160上。視情況,舟皿160可經定尺寸以及組態來縱向以及順時針支撐多個合成基板10。舉例而言,舟皿160可經定尺寸以及組態以縱向支撐兩個合成基板10,以及順時針支撐兩個合成基板10。可提供此等舟皿160來在反應管120內部被固定安裝或裝載/卸載。At least one boat 160 may be provided to the inside of the reaction tube 120. The boat 160 is of sufficient size such that a plurality of composite substrates 10 can be loaded on the boat 160 in the length direction of the reaction tube 120 (the second direction 42 mentioned above). Optionally, the boat 160 can be sized and configured to support a plurality of composite substrates 10 in a longitudinal and clockwise manner. For example, the boat 160 can be sized and configured to support the two composite substrates 10 longitudinally and to support the two composite substrates 10 clockwise. These boats 160 may be provided for fixed installation or loading/unloading inside the reaction tube 120.

或者,舟皿160可經定尺寸以支撐一個合成基板10。在此情況中,可提供至少一個舟皿160。在提供多個舟皿160的情況中,在反應管120之長度方向(以上提及之第二方向42)中配置此等舟皿,或可在垂直於第一方向42的方向中堆疊此等舟皿。Alternatively, the boat 160 can be sized to support a composite substrate 10. In this case, at least one boat 160 may be provided. In the case where a plurality of boats 160 are provided, such boats are disposed in the longitudinal direction of the reaction tube 120 (the second direction 42 mentioned above), or may be stacked in a direction perpendicular to the first direction 42 Boat.

視情況,可在反應管120而非舟皿160內部安裝支撐框架160'。將合成基板10裝載於支撐框架160'上。圖4以及圖5分別為安裝有支撐框架160'之反應管120的橫截面圖。參看圖4,支撐框架160'包括兩個框架162以及164,此等框架經提供以在反應管120之長度方向中自反應管120之內壁朝向反應管120向內突出。分別相對地安置第一以及第二框架162以及164,以支撐合成基板10的邊緣。將向內突出之導引突起(guide protrusion)162a以及164a分別提供至第一以及第二框架162以及164之末端,用於穩定支撐合成基板10。可提供向下突出的繫扣(hitch)10a,用於在導引突起162a以及164a上扣結。The support frame 160' may be mounted inside the reaction tube 120 rather than the boat 160, as appropriate. The composite substrate 10 is loaded on the support frame 160'. 4 and 5 are cross-sectional views of the reaction tube 120 to which the support frame 160' is attached, respectively. Referring to FIG. 4, the support frame 160' includes two frames 162 and 164 that are provided to protrude inwardly from the inner wall of the reaction tube 120 toward the reaction tube 120 in the longitudinal direction of the reaction tube 120. The first and second frames 162 and 164 are respectively disposed opposite to support the edge of the composite substrate 10. Guide protrusions 162a and 164a protruding inwardly are provided to the ends of the first and second frames 162 and 164, respectively, for stably supporting the composite substrate 10. A downwardly protruding hitch 10a may be provided for fastening on the guide protrusions 162a and 164a.

第一框架162以及第二框架164可足夠長,以在反應管120之長度方向中將多個合成基板10裝載於其上。可提供一或多個支撐框架160'以在上下方向中相互隔開。在反應管120經提供以具有圓形剖面之情況中,可上下安裝兩個支撐框架160'。視情況,藉由提供具有比邊緣寬之中心的支撐框架160',可提供至少三個支撐框架。或者,如圖5中說明,反應管140a可經提供以具有矩形剖面,且多個支撐框架160'可經提供以使其堆疊。The first frame 162 and the second frame 164 may be long enough to load a plurality of composite substrates 10 thereon in the longitudinal direction of the reaction tube 120. One or more support frames 160' may be provided to be spaced apart from each other in the up and down direction. In the case where the reaction tube 120 is provided to have a circular cross section, the two support frames 160' can be mounted up and down. Optionally, at least three support frames can be provided by providing a support frame 160' having a center wider than the edges. Alternatively, as illustrated in FIG. 5, the reaction tube 140a may be provided to have a rectangular cross section, and a plurality of support frames 160' may be provided to be stacked.

在此實施例中,描述了使用烴熱解之反應室100,其中熱分解烴來製造碳奈米管30。然而,其僅為例示性的且可使用利用雷射沈積、電漿化學氣相沈積(電漿CVD)、熱化學CVD、框架合成以及電弧放電之各種反應室。In this embodiment, a reaction chamber 100 using hydrocarbon pyrolysis is described in which hydrocarbons are thermally decomposed to produce carbon nanotubes 30. However, it is merely illustrative and various reaction chambers using laser deposition, plasma chemical vapor deposition (plasma CVD), thermochemical CVD, frame synthesis, and arc discharge can be used.

返回至圖1,台部分200包括與外部隔離之室200a。在台部分200與反應室100之間安裝第一閘閥122來開關路徑,合成基板10沿此路徑在其間行進。在台部分200與第二輸送體700之間安裝第二閘閥224來開關路徑,合成基板10沿此路徑在其間行進。Returning to Figure 1, the stage portion 200 includes a chamber 200a that is isolated from the exterior. A first gate valve 122 is mounted between the stage portion 200 and the reaction chamber 100 to switch paths along which the composite substrate 10 travels. A second gate valve 224 is mounted between the stage portion 200 and the second conveyor body 700 to switch the path along which the composite substrate 10 travels.

在台部分200處安裝氣體供應構件280,用於將諸如氮以及氬的惰性氣體供應至台部分200中。供應惰性氣體,以移除台部分200內部之空氣(特別是氧),且在惰性氣體環境下維持台部分200之內部。此使得可能當在台部分200內部自反應室100卸載合成基板10時,防止合成基板10上所製造之高溫碳奈米管30暴露於氧中。將氣體供應部分280提供至第一區域240,其中安裝基板容納部分400。A gas supply member 280 is installed at the stage portion 200 for supplying an inert gas such as nitrogen and argon into the stage portion 200. An inert gas is supplied to remove air (especially oxygen) inside the stage portion 200 and maintain the interior of the stage portion 200 in an inert gas atmosphere. This makes it possible to prevent the high temperature carbon nanotube 30 manufactured on the synthetic substrate 10 from being exposed to oxygen when the synthetic substrate 10 is unloaded from the reaction chamber 100 inside the stage portion 200. The gas supply portion 280 is supplied to the first region 240 in which the substrate housing portion 400 is mounted.

在第一閘閥222經安置鄰近於反應室100的情況中,第一閘閥222可歸因於反應室100內部所產生之輻射熱而損壞。因此,反應室100具有足以防止第一閘閥222之損壞的長度,其允許充分維持加熱單元140與第一閘閥222之間的差別。然而,反應室100之足夠長度導致系統1之按比例增大。In the case where the first gate valve 222 is disposed adjacent to the reaction chamber 100, the first gate valve 222 may be damaged due to radiant heat generated inside the reaction chamber 100. Therefore, the reaction chamber 100 has a length sufficient to prevent damage of the first gate valve 222, which allows the difference between the heating unit 140 and the first gate valve 222 to be sufficiently maintained. However, sufficient length of the reaction chamber 100 results in a proportional increase in the system 1.

在此實施例中,在第一閘閥222與反應室100之間安裝熱屏蔽構件180,用於抑制系統1的按比例增大以及防止輻射熱損壞第一閘閥222。熱屏蔽構件190屏蔽自反應室100所傳遞之熱。熱屏蔽構件190包括諸如氧化鋁之低熱導性屏蔽板192,以及經提供用於驅動屏蔽板192的驅動器194。或者,屏蔽板192可由典型金屬製成。在此情況中,可提供冷卻構件(未圖示),用於防止反應室120內部之熱損壞屏蔽板192,以及提高屏蔽效率。In this embodiment, a heat shield member 180 is installed between the first gate valve 222 and the reaction chamber 100 for suppressing the proportional increase of the system 1 and preventing the radiant heat from damaging the first gate valve 222. The heat shield member 190 shields heat transferred from the reaction chamber 100. The heat shield member 190 includes a low thermal conductivity shield 192, such as alumina, and a driver 194 that is provided to drive the shield 192. Alternatively, the shield plate 192 can be made of a typical metal. In this case, a cooling member (not shown) may be provided for preventing heat inside the reaction chamber 120 from damaging the shield plate 192, and improving the shielding efficiency.

當關閉第一閘閥222時,在第一閘閥前安置屏蔽板190以防止熱損壞第一閘閥222。當打開第一閘閥222時,屏蔽板190移動至不阻擋合成基板10之前進路徑的位置。When the first gate valve 222 is closed, the shield plate 190 is placed in front of the first gate valve to prevent heat from damaging the first gate valve 222. When the first gate valve 222 is opened, the shield plate 190 is moved to a position that does not block the advancement path of the composite substrate 10.

在合成基板10裝載於反應室160上前,自催化劑塗覆單元500將催化劑(金屬層)20塗覆於反應室160上。圖6展示圖1中展示之所說明之催化劑塗覆單元500的組態,且圖7為沿圖6之線A-A'截取之橫截面圖的俯視平面圖。A catalyst (metal layer) 20 is applied from the catalyst coating unit 500 to the reaction chamber 160 before the synthetic substrate 10 is loaded on the reaction chamber 160. 6 shows the configuration of the catalyst coating unit 500 illustrated in FIG. 1, and FIG. 7 is a top plan view of a cross-sectional view taken along line AA' of FIG.

參看圖6以及圖7,催化劑塗覆單元500包括催化劑儲存槽(漏斗)520、固定量供應部分560、刷式單元580以及台590。在製程期間,將合成基板10裝載於台590上。催化劑儲存槽520經安置於台590上,且具有經組態用於將設定量之催化劑20供應至合成基板10之頂部表面的輸出孔526a。刷式單元580刷拭經提供至合成基板10之頂部表面的催化劑20,使催化劑20在合成基板10之頂部表面上能夠具有均一厚度。Referring to FIGS. 6 and 7, the catalyst coating unit 500 includes a catalyst storage tank (funnel) 520, a fixed amount supply portion 560, a brush unit 580, and a stage 590. The composite substrate 10 is loaded on the stage 590 during the process. Catalyst storage tank 520 is disposed on stage 590 and has an output aperture 526a configured to supply a set amount of catalyst 20 to the top surface of composite substrate 10. The brush unit 580 wipes the catalyst 20 supplied to the top surface of the composite substrate 10 so that the catalyst 20 can have a uniform thickness on the top surface of the composite substrate 10.

台590包括以規定間隔隔開而定位合成基板10且相互面對之側板592,以及經安裝以朝向各別側板592向內突出且支撐合成基板10之邊緣的多個支撐突起594。可在各別側板592處安裝多個支撐突起594。The stage 590 includes side plates 592 that are spaced apart at predetermined intervals to face the composite substrate 10 and face each other, and a plurality of support protrusions 594 that are mounted to protrude inwardly toward the respective side plates 592 and support the edges of the composite substrate 10. A plurality of support protrusions 594 can be mounted at the respective side panels 592.

刷式單元580包括導軌584、塗覆刷587以及可移動本體588。在台590之雙側處縱向安裝導軌584,合成基板10裝載於台590上。可移動本體588可移動地安裝於導軌584處,且藉由線性移動驅動器586來線性移動。使用諸如線性馬達驅動方法、圓筒驅動方法以及馬達驅動方法之習知驅動方法來進行可移動本體588的線性移動。塗覆刷587安置於台590上用於刷拭催化劑,使得催化劑在合成基板10之整個表面上具有均一厚度。因為塗覆刷587之兩個末端均連接至可移動本體587,所以塗覆刷587藉由可移動本體588可滑動地行進。塗覆刷587可為具有相對於正向之特定斜側的金屬或非金屬板。The brush unit 580 includes a rail 584, a coating brush 587, and a movable body 588. A guide rail 584 is longitudinally mounted at both sides of the stage 590, and the composite substrate 10 is mounted on the stage 590. The movable body 588 is movably mounted at the rail 584 and linearly moved by the linear motion drive 586. The linear movement of the movable body 588 is performed using a conventional driving method such as a linear motor driving method, a cylinder driving method, and a motor driving method. A coating brush 587 is disposed on the stage 590 for brushing the catalyst such that the catalyst has a uniform thickness over the entire surface of the composite substrate 10. Since both ends of the application brush 587 are connected to the movable body 587, the application brush 587 is slidably traveled by the movable body 588. The application brush 587 can be a metal or non-metal plate having a particular oblique side with respect to the forward direction.

塗覆刷587藉由垂直移動單元589來上下行進,使得可調整塗覆刷587的高度。此使經供應至合成基板10之頂部表面之催化劑20的塗覆厚度能夠得以調節。垂直移動單元589包括與可移動本體588之頂部表面固定連接的頂板589a、與可移動本體588之底部表面固定連接以面對頂板589a的底板589b,以及經垂直安置以將頂板589a與底板589b連接之導軸589c。在導軸589c處安裝托架589d。托架589d藉由驅動器(未圖示)沿導軸589c線性上下行進。在托架589d上固定安裝塗覆刷587。The application brush 587 is moved up and down by the vertical movement unit 589 so that the height of the application brush 587 can be adjusted. This enables the coating thickness of the catalyst 20 supplied to the top surface of the composite substrate 10 to be adjusted. The vertical movement unit 589 includes a top plate 589a fixedly coupled to the top surface of the movable body 588, a bottom plate 589b fixedly coupled to the bottom surface of the movable body 588 to face the top plate 589a, and vertically disposed to connect the top plate 589a to the bottom plate 589b Guide shaft 589c. A bracket 589d is mounted at the guide shaft 589c. The bracket 589d linearly travels up and down along the guide shaft 589c by a driver (not shown). A coating brush 587 is fixedly mounted on the bracket 589d.

催化劑儲存槽520將儲存之催化劑20供應至合成基板10上。催化劑儲存槽520具有頂部表面522、側表面524以及底部表面526,其中形成輸出孔526a。側表面524包括粗略垂直的上部524a、自上部524a向下延伸且向內下彎之中間部分524b以及自中間部分524b粗略垂直延伸之下部524c。歸因於以上描述的結構,相較於在同一高度之下部524c所界定之空間,大量催化劑20儲存於上部524a所界定的空間中。中間部分524b之形狀使儲存於上部524a所界定之空間中的催化劑20能夠平穩供應至下部524c所界定之空間。The catalyst storage tank 520 supplies the stored catalyst 20 onto the composite substrate 10. The catalyst storage tank 520 has a top surface 522, a side surface 524, and a bottom surface 526 in which an output aperture 526a is formed. The side surface 524 includes a generally vertical upper portion 524a, an intermediate portion 524b extending downwardly from the upper portion 524a and bent inwardly, and a lower vertical portion 524c extending from the intermediate portion 524b. Due to the structure described above, a large amount of catalyst 20 is stored in the space defined by the upper portion 524a as compared to the space defined by the portion 524c below the same height. The shape of the intermediate portion 524b allows the catalyst 20 stored in the space defined by the upper portion 524a to be smoothly supplied to the space defined by the lower portion 524c.

在催化劑儲存槽520處安裝固定量供應單元560,用於將固定量之催化劑20供應至合成基板10的頂部表面。固定量供應單元560包括頂部屏蔽板564以及底部屏蔽板562,此等屏蔽板經組態用於界定固定量空間,固定量之催化劑20浸漬至此固定量空間中。將頂部以及底部屏蔽板564以及562提供至底部524c。在催化劑儲存槽520的輸出孔526a上安置固定量空間568。在固定量空間568上提供頂部屏蔽板564,且在其下提供底部屏蔽板562。頂部以及底部屏蔽板564以及562藉由諸如圓筒566之驅動部件進行操作。當在底部屏蔽板562關閉時關閉頂部屏蔽板564時,在底部與頂部屏蔽板562與564之間重界定固定量空間568,且以設定量的催化劑20填充固定量空間568。A fixed amount supply unit 560 is installed at the catalyst storage tank 520 for supplying a fixed amount of the catalyst 20 to the top surface of the composite substrate 10. The fixed amount supply unit 560 includes a top shield plate 564 and a bottom shield plate 562 that are configured to define a fixed amount of space into which a fixed amount of catalyst 20 is impregnated. Top and bottom shields 564 and 562 are provided to bottom 524c. A fixed amount of space 568 is disposed on the output aperture 526a of the catalyst storage tank 520. A top shield 564 is provided on the fixed volume 568 and a bottom shield 562 is provided thereunder. The top and bottom shields 564 and 562 are operated by a drive component such as a cylinder 566. When the top shield 564 is closed when the bottom shield 562 is closed, a fixed amount of space 568 is redefined between the bottom and top shields 562 and 564, and a fixed amount of space 568 is filled with a set amount of catalyst 20.

當打開底部屏蔽板562時,將浸漬至固定量空間568中之催化劑20經由輸出孔526a供應至合成基板10之頂部表面。在催化劑儲存槽520的中間部分542b處安裝攪拌器540,用於攪拌催化劑20。攪拌器540之攪拌翼542在將催化劑20供應至固定量空間568前旋轉,從而消除了催化劑儲存槽520內部之未用空間,且誘發催化劑20自然供應至固定量空間568。When the bottom shield 562 is opened, the catalyst 20 impregnated into the fixed amount of space 568 is supplied to the top surface of the composite substrate 10 via the output hole 526a. A stirrer 540 is installed at the intermediate portion 542b of the catalyst storage tank 520 for agitating the catalyst 20. The agitating blades 542 of the agitator 540 rotate before supplying the catalyst 20 to the fixed amount of space 568, thereby eliminating unused space inside the catalyst storage tank 520, and inducing the natural supply of the catalyst 20 to the fixed amount of space 568.

現參看圖8至圖10來描述催化劑塗覆單元500的催化劑塗覆步驟。當藉由第二輸送體700將合成基板10裝載於台590上時,底部屏蔽板562藉由圓筒566進行操作,以當在側方向中行進時打開固定量空間之底部。浸漬至固定量空間568中之設定量的催化劑20滴落於合成基板10的頂部表面上(見圖8)。藉由刷式單元580來以基板10之頂部表面上所累積之催化劑20塗覆合成基板10的整個表面(見圖9以及圖10)。亦即,當自合成基板10之一個末端可滑動地行進至其另一末端時,塗覆刷587以催化劑20保形塗覆合成基板10之整個表面。為了保形塗覆催化劑20,可安裝振動器(未圖示)用於將微小振動施加至塗覆刷587或合成基板10。The catalyst coating step of the catalyst coating unit 500 will now be described with reference to Figs. 8 to 10. When the composite substrate 10 is loaded on the stage 590 by the second transport body 700, the bottom shield plate 562 is operated by the cylinder 566 to open the bottom of the fixed amount of space when traveling in the side direction. The set amount of the catalyst 20 impregnated into the fixed amount of space 568 is dropped on the top surface of the composite substrate 10 (see Fig. 8). The entire surface of the composite substrate 10 is coated by the catalyst unit 20 accumulated on the top surface of the substrate 10 by the brush unit 580 (see FIGS. 9 and 10). That is, when one end of the synthetic substrate 10 is slidably traveled to the other end thereof, the coating brush 587 conformally coats the entire surface of the composite substrate 10 with the catalyst 20. In order to conformally coat the catalyst 20, a vibrator (not shown) may be mounted for applying minute vibrations to the application brush 587 or the composite substrate 10.

催化劑20可為藉由將過渡金屬(例如,鐵、鉑、鈷、鎳、釔或其組合)與多孔物質(例如,MgO、A12O3或SiO2)混合而製成的粉末。或者,催化劑20可為包括以上提及之物質的液體催化劑。在催化劑20為液體催化劑之情況下,系統可包括催化劑儲存槽、供應線、安裝於供應線上之固定量供應泵以及經組態用於將液體催化劑供應至合成基板之頂部表面的供應噴嘴。The catalyst 20 may be a powder prepared by mixing a transition metal (for example, iron, platinum, cobalt, nickel, rhodium, or a combination thereof) with a porous substance (for example, MgO, A12O3, or SiO2). Alternatively, catalyst 20 can be a liquid catalyst comprising the materials mentioned above. Where the catalyst 20 is a liquid catalyst, the system can include a catalyst storage tank, a supply line, a fixed amount supply pump mounted on the supply line, and a supply nozzle configured to supply the liquid catalyst to the top surface of the composite substrate.

根據以上實施例,當在合成基板10之頂部表面上行進時,塗覆刷587以催化劑20來保形塗覆合成基板10之頂部表面。與此不同,塗覆刷587經固定且台590可行進。較佳地,塗覆刷587行進以減小催化劑塗覆單元500的空間。According to the above embodiment, the coating brush 587 conformally coats the top surface of the composite substrate 10 with the catalyst 20 when traveling on the top surface of the composite substrate 10. Unlike this, the application brush 587 is fixed and the table 590 can travel. Preferably, the application brush 587 travels to reduce the space of the catalyst coating unit 500.

亦根據以上實施例,藉由催化劑塗覆單元500將催化劑20獨立塗覆於合成基板10上,且在反應室100內部在以催化劑20塗覆之合成基板10上製造碳奈米管30。與此不同,可移除催化劑塗覆單元且可供應催化劑氣體以及源氣以在反應室內部塗覆催化劑以及在合成基板之頂部表面上製造碳奈米管。Also according to the above embodiment, the catalyst 20 is independently coated on the synthetic substrate 10 by the catalyst coating unit 500, and the carbon nanotube 30 is fabricated on the synthetic substrate 10 coated with the catalyst 20 inside the reaction chamber 100. Unlike this, the catalyst coating unit can be removed and the catalyst gas and the source gas can be supplied to coat the catalyst inside the reaction chamber and to fabricate the carbon nanotube on the top surface of the synthetic substrate.

圖11為基板容納部分400以及第一輸送體300的俯視平面圖,且圖12為基板容納部分400之側視圖。基板容納部分400包括經組態用於容納合成基板10之卡匣420、垂直軌道442、水平軌道444以及可移動框架446。分別在第一區域240的轉角處安置垂直軌道442。垂直軌道442中之每一者具有垂直長桿之形狀,用於導引可移動框架446的上下移動。托架446與各別垂直軌道442耦接,且藉由垂直驅動器(未圖示)沿垂直軌道442上下行進。在第一方向42中縱向提供各別可移動框架446且其相互面對地經安置。可移動框架446與托架448嚙合,以藉由托架448沿垂直軌道442線性上下行進。在可移動框架446上固定安裝水平軌道444。在第二方向44中縱向提供各別水平軌道444且其相互面對地經安置。貫穿第一區域240來提供水平軌道444。卡匣安裝於水平軌道444上以在第二方向44中沿水平軌道444為可移動的。11 is a top plan view of the substrate housing portion 400 and the first conveying body 300, and FIG. 12 is a side view of the substrate housing portion 400. The substrate housing portion 400 includes a cassette 420 configured to receive the composite substrate 10, a vertical track 442, a horizontal track 444, and a movable frame 446. Vertical tracks 442 are placed at the corners of the first region 240, respectively. Each of the vertical rails 442 has the shape of a vertical long rod for guiding the up and down movement of the movable frame 446. Brackets 446 are coupled to respective vertical rails 442 and travel up and down along vertical rails 442 by vertical drives (not shown). The respective movable frames 446 are longitudinally provided in the first direction 42 and are disposed facing each other. The movable frame 446 is engaged with the bracket 448 to linearly travel up and down along the vertical rail 442 by the bracket 448. A horizontal rail 444 is fixedly mounted on the movable frame 446. The respective horizontal rails 444 are longitudinally provided in the second direction 44 and are disposed facing each other. A horizontal track 444 is provided through the first region 240. The cassette is mounted on a horizontal track 444 to be movable along the horizontal track 444 in the second direction 44.

如圖11中說明,卡匣420在由虛線所表示之等待位置X1與裝載/卸載位置X2(正是連接至反應室之第一閘閥的前方)之間水平行進。等待位置X1存在於第一區域240之底部區域244中,且裝載/卸載位置X2存在於其頂部區域242中。當將合成基板10裝載至反應室100/自反應室100卸載合成基板10時,且當藉由第二輸送體700輸送合成基板10時,卡匣420行進至裝載/卸載位置X2。又,當等待下降合成基板10的溫度時,卡匣420行進至等待位置X1。As illustrated in Fig. 11, the cassette 420 travels horizontally between the waiting position X1 indicated by the broken line and the loading/unloading position X2 (which is the front of the first gate valve connected to the reaction chamber). The waiting position X1 is present in the bottom region 244 of the first region 240, and the loading/unloading position X2 is present in its top region 242. When the synthetic substrate 10 is loaded into the reaction chamber 100 / the composite substrate 10 is unloaded from the reaction chamber 100, and when the composite substrate 10 is transported by the second transport body 700, the cassette 420 travels to the loading/unloading position X2. Also, when waiting to lower the temperature of the composite substrate 10, the cassette 420 travels to the waiting position X1.

圖13為卡匣420之透視圖。將待裝載至反應室100之合成基板以及自反應室100所卸載的合成基板10容納於卡匣420中。參看圖13,卡匣420包括支撐體422、頂板424、底板426以及垂直軸428。頂板424以及底板426為相互面對的矩形板。垂直軸428將頂板424以及底板426之相應轉角相互連接。因此,提供四個垂直軸428。在垂直軸428處安裝支撐體422以在卡匣420中累積以及容納合成基板10。支撐體422中之每一者具有用於支撐合成基板10之轉角部分的四個支撐基塊423。將支撐體422分割成兩組,其中第一組包括第一支撐體422a且第二組包括第二支撐體422b。第一支撐體422a支撐待裝載至反應室10之合成基板10,且第二支撐體422b支撐自反應室10卸載之合成基板10。在例示性實施例中,提供四個第一支撐體422a以及四個第二支撐體422b,且在第二支撐體422b上安置第一支撐體422a。Figure 13 is a perspective view of the cassette 420. The composite substrate to be loaded into the reaction chamber 100 and the composite substrate 10 unloaded from the reaction chamber 100 are housed in the cassette 420. Referring to FIG. 13, the cassette 420 includes a support body 422, a top plate 424, a bottom plate 426, and a vertical shaft 428. The top plate 424 and the bottom plate 426 are rectangular plates that face each other. The vertical axis 428 interconnects the respective corners of the top plate 424 and the bottom plate 426. Therefore, four vertical axes 428 are provided. The support body 422 is mounted at the vertical axis 428 to accumulate and accommodate the composite substrate 10 in the cassette 420. Each of the supports 422 has four support blocks 423 for supporting the corner portions of the composite substrate 10. The support body 422 is divided into two groups, wherein the first group includes the first support body 422a and the second group includes the second support body 422b. The first support 422a supports the composite substrate 10 to be loaded into the reaction chamber 10, and the second support 422b supports the composite substrate 10 unloaded from the reaction chamber 10. In the exemplary embodiment, four first support bodies 422a and four second support bodies 422b are provided, and a first support body 422a is disposed on the second support body 422b.

第二支撐體422b之間的空間比第一支撐體422a之間的空間大,此使得能夠減少卡匣420之整個高度,且提供足以防止自反應室100卸載的合成基板之整個表面上所製造的碳奈米管30接觸鄰近之合成基板10的空間。The space between the second support bodies 422b is larger than the space between the first support bodies 422a, which makes it possible to reduce the entire height of the cassettes 420, and to provide the entire surface of the synthetic substrate sufficient to prevent unloading from the reaction chamber 100. The carbon nanotube 30 contacts the space of the adjacent composite substrate 10.

藉由第一輸送體將卡匣420之第一支撐體422a處所容納的合成基板10裝載至反應室100中。將四個合成基板10裝載於反應室100的舟皿160上。第一輸送體300一個接一個地將合成基板裝載至反應室100/自反應室100卸載合成基板。The composite substrate 10 accommodated at the first support 422a of the cassette 420 is loaded into the reaction chamber 100 by the first transport body. Four composite substrates 10 are loaded on the boat 160 of the reaction chamber 100. The first transport body 300 loads the synthetic substrate one by one to the reaction chamber 100 / unloads the synthetic substrate from the reaction chamber 100.

若完成裝載合成基板10,則在反應室100內部執行製造碳奈米管30之製程。在製程期間,其他四個合成基板10在以催化劑塗覆後在卡匣420之第一支撐體422a處等待。When the loading of the composite substrate 10 is completed, the process of manufacturing the carbon nanotubes 30 is performed inside the reaction chamber 100. During the process, the other four composite substrates 10 wait at the first support 422a of the cassette 420 after coating with the catalyst.

若在反應室100內部完成用於製造碳奈米管30的製程,則藉由第一輸送體300自反應室100卸載高溫合成基板10,以容納於卡匣之第二支撐體422b處。在預定時間內在第二支撐體422b處冷卻高溫合成基板10。藉由自然冷卻來進行冷卻高溫合成基板10。或者,可使用諸如冷卻水之冷卻部件來強制進行冷卻。When the process for manufacturing the carbon nanotubes 30 is completed inside the reaction chamber 100, the high temperature synthetic substrate 10 is unloaded from the reaction chamber 100 by the first transport body 300 to be accommodated at the second support 422b of the cassette. The high temperature composite substrate 10 is cooled at the second support 422b for a predetermined time. The high temperature synthetic substrate 10 is cooled by natural cooling. Alternatively, cooling means such as cooling water may be used to force cooling.

當將合成基板10(其上製造碳奈米管30)快速取出反應室100時(未以預定溫度冷卻),將在卡匣420的第一支撐體422a處等待之四個合成基板10(用以製造碳奈米管30)裝載至反應室100。同樣,在反應室100中,當以製程溫度維持反應室120之溫度時,快速裝載合成基板10以省略將反應管120升高直到製程溫度的步驟。When the synthetic substrate 10 (on which the carbon nanotube 30 is fabricated) is quickly taken out of the reaction chamber 100 (not cooled at a predetermined temperature), the four synthetic substrates 10 to be waited at the first support 422a of the cassette 420 (using The carbon nanotube tube 30) is loaded into the reaction chamber 100. Also, in the reaction chamber 100, when the temperature of the reaction chamber 120 is maintained at the process temperature, the synthetic substrate 10 is quickly loaded to omit the step of raising the reaction tube 120 up to the process temperature.

合成基板(其上製造碳奈米管30)在卡匣420之第二支撐體422b處等待,直至下降至預定溫度下為止。在台部分200內部安置卡匣420,合成基板10在此卡匣420處等待。因為以惰性氣體填充台部分200之內部,所以在卡匣420處等待的合成基板10並不與外部氣體(特別是空氣)接觸。當在反應室100中所處理之合成基板下降至預定溫度下時,無問題出現。然而,若高溫合成基板10暴露於室溫空氣中,則合成基板10之表面上所製造的碳奈米管30與空氣之氧起反應而變形。為了抑制碳奈米管30的變形,提供以惰性氣體填充之台部分200用於防止自反應室100卸載之合成基板10接觸氧。The synthetic substrate on which the carbon nanotube 30 is made waits at the second support 422b of the cassette 420 until it drops to a predetermined temperature. A cassette 420 is disposed inside the stage portion 200, and the composite substrate 10 waits at the cassette 420. Since the inside of the stage portion 200 is filled with an inert gas, the synthetic substrate 10 waiting at the cassette 420 is not in contact with external air (especially air). When the synthetic substrate processed in the reaction chamber 100 is lowered to a predetermined temperature, no problem occurs. However, if the high temperature synthetic substrate 10 is exposed to room temperature air, the carbon nanotubes 30 produced on the surface of the synthetic substrate 10 are deformed by reaction with oxygen of the air. In order to suppress deformation of the carbon nanotube 30, a stage portion 200 filled with an inert gas is provided for preventing the synthetic substrate 10 unloaded from the reaction chamber 100 from contacting oxygen.

經由第二閘閥224,藉由第二輸送體700將在預定時間內在卡匣420之第二支撐體422b處等待的合成基板10輸送至擷取部分600。擷取之合成基板10在藉由催化劑塗覆單元500以催化劑20塗覆後容納於卡匣之第一支撐體422a處。The composite substrate 10 waiting at the second support 422b of the cassette 420 for a predetermined time is transported to the scooping portion 600 via the second transport valve 700 via the second gate valve 224. The drawn synthetic substrate 10 is accommodated at the first support 422a of the cassette after being coated with the catalyst 20 by the catalyst coating unit 500.

在根據本發明之系統中,八個合成基板經分割成兩組且交替經受在反應室中合成碳奈米管30的製程。從而,可提高處理量來達成大量製造。In the system according to the invention, eight synthetic substrates are divided into two groups and alternately subjected to a process of synthesizing the carbon nanotubes 30 in the reaction chamber. Thereby, the amount of processing can be increased to achieve mass production.

圖14為第一輸送體300之透視圖。第一輸送體300包括臂320、葉片340以及驅動器360。驅動器360包括垂直軌道362、水平軌道364、可移動框架366以及可移動基塊368。分別在第二區域260之轉角部分處安置垂直軌道362。垂直軌道362中之每一者具有縱向長桿之形狀,以導引可移動框架366的上下移動。托架365與垂直軌道362中之每一者耦接,且藉由垂直驅動器(未圖示)進行上下行進。在第二方向44中提供較長之可移動框架366以相互面對。可移動框架366與托架365嚙合以藉由托架365沿垂直軌道362線性上下移動。可移動框架366中之每一者具有在第二方向44中固定安裝於面對托架365處的兩個末端,且可移動框架366藉由托架365進行上下移動。在可移動框架366上固定安裝水平軌道364。在第一方向42中提供較長之水平軌道364中的每一者。貫穿第二區域260來提供水平軌道364,且可移動基塊368安裝於水平軌道364上以在第二方向44中沿水平軌道364為可移動的。臂320固定安裝於可移動基塊368處且在第一方向中提供為較長的。在臂320之末端處安裝葉片340用於支撐合成基板10。FIG. 14 is a perspective view of the first transport body 300. The first conveyor body 300 includes an arm 320, a vane 340, and a driver 360. The driver 360 includes a vertical track 362, a horizontal track 364, a movable frame 366, and a movable base 368. Vertical rails 362 are disposed at the corner portions of the second region 260, respectively. Each of the vertical rails 362 has the shape of a longitudinal long rod to guide the up and down movement of the movable frame 366. The bracket 365 is coupled to each of the vertical rails 362 and travels up and down by a vertical drive (not shown). Longer movable frames 366 are provided in the second direction 44 to face each other. The movable frame 366 is engaged with the bracket 365 to linearly move up and down along the vertical rail 362 by the bracket 365. Each of the movable frames 366 has two ends fixedly mounted in the second direction 44 at the facing bracket 365, and the movable frame 366 is moved up and down by the bracket 365. A horizontal rail 364 is fixedly mounted on the movable frame 366. Each of the longer horizontal tracks 364 is provided in the first direction 42. A horizontal track 364 is provided through the second region 260, and the movable base 368 is mounted on the horizontal track 364 to be movable along the horizontal track 364 in the second direction 44. The arm 320 is fixedly mounted to the movable base 368 and provided to be longer in the first direction. A blade 340 is mounted at the end of the arm 320 for supporting the composite substrate 10.

第一輸送體300包括經提供用於冷卻臂320之冷卻構件330。在反應管120較長的情況中,使用較長臂320來裝載/卸載合成基板10。然而,因為以極高溫度來維持反應管120之內部,所以當臂320進入反應管120中時反應管120受熱膨脹。從而,未在設定位置處而在偏離位置處將合成基板10裝載於葉片340上。當在葉片340上自設定位置輸送合成基板340時,該合成基板可自葉片340偏離或在自設定位置偏離後裝載於卡匣420上。The first conveyor body 300 includes a cooling member 330 that is provided for cooling the arm 320. In the case where the reaction tube 120 is long, the longer arm 320 is used to load/unload the synthetic substrate 10. However, since the inside of the reaction tube 120 is maintained at an extremely high temperature, the reaction tube 120 is thermally expanded when the arm 320 enters the reaction tube 120. Thereby, the composite substrate 10 is loaded on the blade 340 at the offset position not at the set position. When the composite substrate 340 is transported from the set position on the blade 340, the composite substrate can be loaded on the cassette 420 after being offset from the blade 340 or after being offset from the set position.

提供冷卻構件330以在臂320進入反應管120中時防止熱損壞臂320。圖15說明經提供而用於冷卻構件330之第一輸送體300。冷卻構件330包括冷卻線332、冷卻水供應管334以及冷卻水擷取管336。在臂320的長度方向中,將冷卻線332提供至臂320中。將冷卻水供應管334連接至冷卻線332之一個末端,用於將冷卻水供應至冷卻線332,且將冷卻水擷取管336連接至其另一末端,用於自冷卻線332擷取冷卻水。在冷卻水供應管334上安裝閥門334a,用於打開或關閉管334之內部路徑或控制冷卻水的流動速率。A cooling member 330 is provided to prevent heat damage to the arm 320 when the arm 320 enters the reaction tube 120. FIG. 15 illustrates a first transport body 300 that is provided for cooling member 330. The cooling member 330 includes a cooling line 332, a cooling water supply pipe 334, and a cooling water dip tube 336. In the longitudinal direction of the arm 320, a cooling line 332 is provided into the arm 320. A cooling water supply pipe 334 is connected to one end of the cooling line 332 for supplying cooling water to the cooling line 332, and a cooling water dip tube 336 is connected to the other end thereof for cooling from the cooling line 332 water. A valve 334a is mounted on the cooling water supply pipe 334 for opening or closing the internal path of the pipe 334 or controlling the flow rate of the cooling water.

以高溫來加熱完全處理之合成基板10。當在台部分200處等待之葉片340接觸加熱之合成基板10以自反應管120卸載加熱之合成基板10時,合成基板10可歸因於溫度的快速變化而損壞。從而,應減小葉片340與合成基板10之間的接觸面積。The fully processed composite substrate 10 is heated at a high temperature. When the blade 340 waiting at the stage portion 200 contacts the heated synthetic substrate 10 to unload the heated synthetic substrate 10 from the reaction tube 120, the synthetic substrate 10 can be damaged due to a rapid change in temperature. Thus, the contact area between the blade 340 and the composite substrate 10 should be reduced.

圖16為圖15中展示之葉片340的透視圖。葉片340包括具有扁平頂部表面之板342,以及自板342向上突出以接觸合成基板10之突起344。板342由優質防熱材料製成,此因為在製程期間板342進入反應管120中以裝載/卸載合成基板10。將突起344均一提供至板342的轉角區域或整個區域,用於減小葉片與合成基板之間的接觸面積。Figure 16 is a perspective view of the blade 340 shown in Figure 15. The blade 340 includes a plate 342 having a flat top surface, and a protrusion 344 that protrudes upward from the plate 342 to contact the composite substrate 10. The plate 342 is made of a high-quality heat-proof material because the plate 342 enters the reaction tube 120 during the process to load/unload the synthetic substrate 10. The protrusions 344 are uniformly provided to the corner area or the entire area of the plate 342 for reducing the contact area between the blade and the composite substrate.

如圖17以及圖19中說明,每一突起344a具有待與合成基板10點接觸的半球或多角錐之形狀。或者,如圖19中說明,每一突起344a具有待與合成基板10表面接觸的圓截頂錐或多稜鏡之形狀。As illustrated in FIGS. 17 and 19, each of the protrusions 344a has a shape of a hemisphere or a polygonal pyramid to be in point contact with the composite substrate 10. Alternatively, as illustrated in FIG. 19, each of the protrusions 344a has a shape of a circular truncated cone or a plurality of turns to be in contact with the surface of the composite substrate 10.

可修改或更改突起344之形狀,且其並不限於前述實施例。提供突起344用於防止溫度的快速變化損壞合成基板10。突起344可在形狀、數目以及配置上不同地改變。The shape of the protrusion 344 can be modified or modified, and it is not limited to the foregoing embodiment. The protrusion 344 is provided for preventing the rapid change of temperature from damaging the composite substrate 10. The protrusions 344 can vary differently in shape, number, and configuration.

藉由第二輸送體700將在預定時間內於卡匣420之第二支撐體444處冷卻之合成基板輸送至擷取部分600。The composite substrate cooled at the second support 444 of the cassette 420 for a predetermined time is transported to the scooping portion 600 by the second transport body 700.

圖20以及圖21分別為擷取部分600的透視圖以及俯視平面圖。圖22為說明擷取部分中之碳奈米管30之擷取程序的圖。20 and 21 are a perspective view and a top plan view, respectively, of the scooping portion 600. Fig. 22 is a view for explaining a drawing procedure of the carbon nanotube 30 in the drawing portion.

參看圖20以及圖22,擷取部分600包括合成基板10裝載於其上之台。在台620下,安置擷取容器660,其中儲存自合成基板10擷取之碳奈米管30。在台620處安置擷取單元640,用於自合成基板10的頂部表面將碳奈米管30刷拭至擷取容器660。擷取單元640具備安裝於合成基板10之長度方向中的導軌646。在導軌646處安裝可移動本體644。擷取刷642安裝於可移動本體644處,用於當在長度方向中自合成基板10之一側可滑動地行進時將合成基板10之頂部表面上的碳奈米管30刷拭至擷取容器660。擷取刷642之高度在可移動本體644處為可調整的。Referring to Figures 20 and 22, the scooping portion 600 includes a stage on which the composite substrate 10 is loaded. Under the stage 620, a take-up container 660 is disposed in which the carbon nanotubes 30 taken from the synthetic substrate 10 are stored. A scooping unit 640 is disposed at the stage 620 for wiping the carbon nanotube tube 30 from the top surface of the synthetic substrate 10 to the scooping container 660. The scooping unit 640 includes a guide rail 646 that is attached to the longitudinal direction of the composite substrate 10. A movable body 644 is mounted at the rail 646. The scooping brush 642 is attached to the movable body 644 for wiping the carbon nanotube 30 on the top surface of the synthetic substrate 10 to the scooping when slidably traveling from one side of the synthetic substrate 10 in the longitudinal direction Container 660. The height of the capture brush 642 is adjustable at the movable body 644.

在以上實施例中,描述了當行進時擷取刷642刷拭合成基板10上之催化劑。或者,擷取刷642可經固定且台可行進。較佳地,擷取刷642行進以減小擷取部分600之空間。In the above embodiment, it is described that the pick-up brush 642 brushes the catalyst on the composite substrate 10 as it travels. Alternatively, the scooping brush 642 can be fixed and the table can travel. Preferably, the scooping brush 642 travels to reduce the space of the scooping portion 600.

可藉由擷取容器660下所提供的量測部分690來量測儲存於擷取容器660中之碳奈米管30的數量,且藉由連接至量測部分690之顯示部分692來顯示量測部分690所量測之碳奈米管30的數量。The number of carbon nanotubes 30 stored in the capture container 660 can be measured by drawing the measurement portion 690 provided under the container 660, and the amount is displayed by being connected to the display portion 692 of the measurement portion 690. The number of carbon nanotubes 30 measured by the portion 690 is measured.

合成基板10(其中擷取碳奈米管30)藉由第二輸送體700而提供至催化劑塗覆單元500,以經受以上描述之塗覆製程。以催化劑塗覆之合成基板10容納於卡匣420的第一支撐體422a處。The synthetic substrate 10 in which the carbon nanotube tube 30 is drawn is supplied to the catalyst coating unit 500 by the second transport body 700 to withstand the coating process described above. The composite substrate 10 coated with the catalyst is housed at the first support 422a of the cassette 420.

參看圖23,用於大量製造以上描述之碳奈米管30之系統執行催化劑塗覆製程(S110)、製造碳奈米管30的製程(S120)、等待(冷卻)製程(S130)以及擷取製程(S140)。在S110中,當自催化劑儲存槽520將一劑催化劑20塗覆至合成基板10之頂部表面時,刷式單元580之塗覆刷587在行進時將催化劑20保形分散至其頂部表面。藉由第一輸送體300將以催化劑20塗覆的合成基板10容納於台部分200處所安裝之基板容納部分400的卡匣420中。在處理之合成基板10自反應室100卸載後不久,藉由第一輸送體300將容納於卡匣420之第一支撐體422a處的合成基板10裝載於反應室100之舟皿160上。當完成裝載合成基板10時,在反應室100內部執行製程以製造碳奈米管30(S120)。在將自反應室100卸載之合成基板10容納於卡匣420的第二支撐體422b處後,合成基板10在預定時間內被冷卻(S130)。在預定時間後,將合成基板10取出台部分400以輸送至擷取部分600(S140)。將在擷取部分600中擷取碳奈米管30之合成基板10輸送至催化劑塗覆部分500,以在以催化劑20塗覆後容納於卡匣420之第一支撐體422a處。在反應室100內部處理的合成基板10在容納於卡匣420之第二支撐體422b處後重複經受以上提及之製程。Referring to Fig. 23, a system for mass-producing the carbon nanotubes 30 described above performs a catalyst coating process (S110), a process for manufacturing the carbon nanotubes 30 (S120), a waiting (cooling) process (S130), and a drawing. Process (S140). In S110, when a dose of catalyst 20 is applied from the catalyst storage tank 520 to the top surface of the composite substrate 10, the coating brush 587 of the brush unit 580 conformally disperses the catalyst 20 to its top surface as it travels. The composite substrate 10 coated with the catalyst 20 is housed in the cassette 420 of the substrate housing portion 400 mounted at the stage portion 200 by the first conveying body 300. Shortly after the processed composite substrate 10 is unloaded from the reaction chamber 100, the composite substrate 10 accommodated at the first support 422a of the cassette 420 is loaded onto the boat 160 of the reaction chamber 100 by the first transport body 300. When the loading of the synthetic substrate 10 is completed, a process is performed inside the reaction chamber 100 to manufacture the carbon nanotubes 30 (S120). After the synthetic substrate 10 unloaded from the reaction chamber 100 is accommodated at the second support 422b of the cassette 420, the composite substrate 10 is cooled for a predetermined time (S130). After the predetermined time, the synthetic substrate 10 is taken out of the stage portion 400 to be conveyed to the scooping portion 600 (S140). The synthetic substrate 10 from which the carbon nanotubes 30 are taken in the scooping portion 600 is sent to the catalyst coating portion 500 to be accommodated at the first support 422a of the cassette 420 after being coated with the catalyst 20. The composite substrate 10 processed inside the reaction chamber 100 is repeatedly subjected to the above-mentioned process after being accommodated at the second support 422b of the cassette 420.

工業適用性Industrial applicability

如至此所描述,本發明具有以下優點:(1)可以自動製造碳奈米管;(2)可以大量製造碳奈米管;(3)因為連續維持反應室的製程,所以合成基板之碳奈米管得以連續合成以提高系統操作速率;(4)自動精確地供應催化劑以提高製程可靠度;以及(5)自動擷取碳奈米管以精確地計算製造速率。As described so far, the present invention has the following advantages: (1) carbon nanotubes can be automatically manufactured; (2) carbon nanotubes can be manufactured in large quantities; (3) carbon nanotubes of synthetic substrates can be synthesized because the process of the reaction chamber is continuously maintained. The rice tubes are continuously synthesized to increase the operating rate of the system; (4) automatically and accurately supply the catalyst to improve process reliability; and (5) automatically pick up the carbon nanotubes to accurately calculate the manufacturing rate.

10...合成基板10. . . Synthetic substrate

10a...繫扣10a. . . Button

20...催化劑20. . . catalyst

30...碳奈米管30. . . Carbon nanotube

42...第二方向42. . . Second direction

44...第一方向44. . . First direction

100...反應室100. . . Reaction chamber

120...反應管/反應室120. . . Reaction tube/reaction chamber

122a...邊緣區域122a. . . Edge area

122b...邊緣區域122b. . . Edge area

124...中心區域124. . . Central region

132...第一凸緣132. . . First flange

132a...密封構件132a. . . Sealing member

134...第二凸緣134. . . Second flange

134a...密封構件134a. . . Sealing member

140...加熱單元140. . . Heating unit

140a...反應管140a. . . Reaction tube

142...邊緣加熱器142. . . Edge heater

142a...第一加熱器142a. . . First heater

142b...第二加熱器142b. . . Second heater

144...中心加熱器144. . . Center heater

146...加熱控制器146. . . Heating controller

150...冷卻構件150. . . Cooling member

152...冷卻線152. . . Cooling line

156...冷卻水供應管156. . . Cooling water supply pipe

156a...閥門156a. . . valve

158...感測器158. . . Sensor

159...控制器159. . . Controller

160...舟皿/反應室160. . . Boat/reaction room

160'...支撐框架160'. . . Support frame

162...第一框架162. . . First frame

162a...導引突起162a. . . Guide protrusion

164...第二框架164. . . Second frame

164a...導引突起164a. . . Guide protrusion

180...熱屏蔽構件/氣體供應構件180. . . Heat shield member / gas supply member

182...氣體供應源182. . . Gas supply

184...氣體供應管184. . . Gas supply pipe

184a...閥門184a. . . valve

186...加熱單元186. . . Heating unit

189...排氣線189. . . Exhaust line

190...熱屏蔽構件/屏蔽板190. . . Heat shield member / shield plate

192...屏蔽板192. . . Shield

194...驅動器194. . . driver

200...台部分200. . . Desk section

200a...室200a. . . room

222...第一閘閥222. . . First gate valve

224...第二閘閥224. . . Second gate valve

240...第一區域240. . . First area

242...頂部區域242. . . Top area

244...底部區域244. . . Bottom area

260...第二區域260. . . Second area

280...氣體供應構件/氣體供應部分280. . . Gas supply member / gas supply portion

300...第一輸送體300. . . First transport body

320...臂320. . . arm

330...冷卻構件330. . . Cooling member

332...冷卻線332. . . Cooling line

334...冷卻水供應管334. . . Cooling water supply pipe

334a...閥門334a. . . valve

336...冷卻水擷取管336. . . Cooling water dip tube

340...葉片340. . . blade

342...板342. . . board

344...突起344. . . Protrusion

344a...突起344a. . . Protrusion

360...驅動器360. . . driver

362...垂直軌道362. . . Vertical orbit

364...水平軌道364. . . Horizontal track

365...托架365. . . bracket

366...可移動框架366. . . Movable frame

368...可移動基塊368. . . Movable base block

400...基板容納部分400. . . Substrate housing portion

420...卡匣420. . . Card

422...支撐體422. . . Support

422a...第一支撐體422a. . . First support

422b...第二支撐體422b. . . Second support

424...頂板424. . . roof

426...底板426. . . Bottom plate

428...垂直軸428. . . Vertical axis

442...垂直軌道442. . . Vertical orbit

444...水平軌道444. . . Horizontal track

446...可移動框架446. . . Movable frame

448...托架448. . . bracket

500...催化劑塗覆單元/催化劑塗覆部分500. . . Catalyst coating unit / catalyst coating portion

520...催化劑儲存槽520. . . Catalyst storage tank

522...頂部表面522. . . Top surface

524...側表面524. . . Side surface

524a...上部524a. . . Upper

524b...中間部分524b. . . Middle part

524c...下部524c. . . Lower part

526...底部表面526. . . Bottom surface

526a...輸出孔526a. . . Output hole

540...攪拌器540. . . Blender

542...攪拌翼542. . . Stirring wing

560...固定量供應部分/固定量供應單元560. . . Fixed supply part / fixed quantity supply unit

562...底部屏蔽板562. . . Bottom shield

564...頂部屏蔽板564. . . Top shield

566...圓筒566. . . Cylinder

568...固定量空間568. . . Fixed amount of space

580...刷式單元580. . . Brush unit

584...導軌584. . . guide

586...線性移動驅動器586. . . Linear mobile drive

587...塗覆刷587. . . Coating brush

588...可移動本體588. . . Movable body

589...垂直移動單元589. . . Vertical mobile unit

589a...頂板589a. . . roof

589b...底板589b. . . Bottom plate

589c...導軸589c. . . Guide shaft

589d...托架589d. . . bracket

590...台590. . . station

592...側板592. . . Side panel

594...支撐突起594. . . Support protrusion

600...擷取部分600. . . Capture part

620...台620. . . station

640...擷取單元640. . . Capture unit

642...擷取刷642. . . Pick up brush

644...可移動本體644. . . Movable body

646...導軌646. . . guide

660...擷取容器660. . . Pick up container

690...量測部分690. . . Measurement section

692...顯示部分692. . . Display section

700...第二輸送體700. . . Second transport body

S110...步驟S110. . . step

S120...步驟S120. . . step

S130...步驟S130. . . step

S140...步驟S140. . . step

X1...等待位置X1. . . Waiting position

X2...裝載/卸載位置X2. . . Load/unload position

圖1說明根據本發明之使用反應室製造碳奈米管的系統。Figure 1 illustrates a system for making a carbon nanotube using a reaction chamber in accordance with the present invention.

圖2說明經組態用於冷卻反應室處所安裝之O形環的冷卻線。Figure 2 illustrates a cooling line configured to cool an O-ring installed at a reaction chamber.

圖3說明經組態用於加熱反應管之加熱單元。Figure 3 illustrates a heating unit configured to heat a reaction tube.

圖4為說明安裝支撐框架之反應室之實例的橫截面圖。4 is a cross-sectional view illustrating an example of a reaction chamber in which a support frame is mounted.

圖5為說明安裝支撐框架之反應室之另一實例的橫截面圖。Figure 5 is a cross-sectional view showing another example of a reaction chamber in which a support frame is mounted.

圖6為圖1中所說明之催化劑塗覆單元的組態圖。Figure 6 is a configuration diagram of the catalyst coating unit illustrated in Figure 1.

圖7為沿圖6之線A-A'截取之橫截面圖的俯視平面圖。Figure 7 is a top plan view of a cross-sectional view taken along line A-A' of Figure 6.

圖8至圖10說明催化劑塗覆單元處之催化劑塗覆步驟。8 to 10 illustrate the catalyst coating step at the catalyst coating unit.

圖11為圖1中所說明之基板容納部分以及第一輸送體的俯視平面圖。Figure 11 is a top plan view of the substrate housing portion and the first conveyor body illustrated in Figure 1.

圖12為基板容納部分之側視圖。Figure 12 is a side view of the substrate housing portion.

圖13為第一輸送體之透視圖。Figure 13 is a perspective view of the first transport body.

圖14為基板容納部分之卡匣的透視圖。Figure 14 is a perspective view of the cassette of the substrate housing portion.

圖15說明經組態用於冷卻圖14中所說明之臂的冷卻構件。Figure 15 illustrates a cooling member configured to cool the arm illustrated in Figure 14.

圖16為圖15中所說明之葉片的透視圖。Figure 16 is a perspective view of the blade illustrated in Figure 15.

圖17至圖19說明在葉片處所形成之突出物的各種實例。17 through 19 illustrate various examples of protrusions formed at the blades.

圖20為擷取部分之透視圖。Figure 20 is a perspective view of the pickup portion.

圖21為圖20中所說明之擷取部分的俯視平面圖。Figure 21 is a top plan view of the captured portion illustrated in Figure 20.

圖22說明在擷取部分處擷取碳奈米管之步驟。Figure 22 illustrates the step of drawing a carbon nanotube at the extraction portion.

圖23為說明使用系統產生碳奈米管之步驟的流程圖。Figure 23 is a flow chart illustrating the steps of using a system to produce a carbon nanotube.

10...合成基板10. . . Synthetic substrate

42...第二方向42. . . Second direction

44...第一方向44. . . First direction

100...反應室100. . . Reaction chamber

120...反應管120. . . Reaction tube

132...第一凸緣132. . . First flange

132a...密封構件132a. . . Sealing member

134...第二凸緣134. . . Second flange

134a...密封構件134a. . . Sealing member

140...加熱單元140. . . Heating unit

152...冷卻線152. . . Cooling line

160...舟皿160. . . Boat

180...熱屏蔽構件/氣體供應構件180. . . Heat shield member / gas supply member

182...氣體供應源182. . . Gas supply

184...氣體供應管184. . . Gas supply pipe

184a...閥門184a. . . valve

186...加熱單元186. . . Heating unit

189...排氣線189. . . Exhaust line

190...熱屏蔽構件/屏蔽板190. . . Heat shield member / shield plate

192...屏蔽板192. . . Shield

194...驅動器194. . . driver

200...台部分200. . . Desk section

200a...室200a. . . room

222...第一閘閥222. . . First gate valve

224...第二閘閥224. . . Second gate valve

240...第一區域240. . . First area

242...頂部區域242. . . Top area

244...底部區域244. . . Bottom area

260...第二區域260. . . Second area

280...氣體供應構件/氣體供應部分280. . . Gas supply member / gas supply portion

300...第一輸送體300. . . First transport body

400...基板容納部分400. . . Substrate housing portion

500...催化劑塗覆單元/催化劑塗覆部分500. . . Catalyst coating unit / catalyst coating portion

600...擷取部分600. . . Capture part

700...第二輸送體700. . . Second transport body

Claims (26)

一種用於製造碳奈米管之系統,包含:反應室,其中執行在合成基板上製造碳奈米管之製程;台部分,其安置於所述反應室之一側處且具備用於將所述合成基板裝載至所述反應室及自所述反應室卸載所述合成基板的第一輸送體,所述第一輸送體僅設置於所述反應室之一側;以及基板容納部分,其中容納待裝載至所述反應室之所述合成基板,或自所述反應室卸載之所述合成基板在其中等待,所述基板容納部分包括:卡匣,其具有第一支撐體,其中容納待裝載至所述反應室的合成基板;以及第二支撐體,其中容納自所述反應室卸載之合成基板,所述第一支撐體堆疊於經堆疊之所述第二支撐體上,且所述第二支撐體的空間大於所述第一支撐體的空間。 A system for manufacturing a carbon nanotube comprising: a reaction chamber in which a process of manufacturing a carbon nanotube on a synthetic substrate is performed; a stage portion disposed at a side of the reaction chamber and provided for Loading a composite substrate to the reaction chamber and unloading the first transport body of the synthetic substrate from the reaction chamber, the first transport body being disposed only on one side of the reaction chamber; and a substrate receiving portion in which the substrate is accommodated The composite substrate to be loaded into the reaction chamber, or the composite substrate unloaded from the reaction chamber, is waiting therein, the substrate receiving portion comprising: a cassette having a first support in which a load is to be loaded a synthetic substrate to the reaction chamber; and a second support in which a synthetic substrate unloaded from the reaction chamber is accommodated, the first support is stacked on the stacked second support, and the The space of the two supports is larger than the space of the first support. 如申請專利範圍第1項所述之用於製造碳奈米管之系統,其中所述台部分包含:室,其與外部隔離以防止自所述反應室卸載之所述合成基板接觸氧。 A system for manufacturing a carbon nanotube according to claim 1, wherein the stage portion comprises: a chamber that is isolated from the outside to prevent the synthetic substrate unloaded from the reaction chamber from contacting oxygen. 如申請專利範圍第2項所述之用於製造碳奈米管之系統,其中所述台部分更包含:氣體供應構件,其經組態用於將惰性氣體供應至所述反應室之內部空間。 The system for manufacturing a carbon nanotube according to claim 2, wherein the stage portion further comprises: a gas supply member configured to supply an inert gas to an internal space of the reaction chamber . 如申請專利範圍第1項所述之用於製造碳奈米管之系統,其中所述卡匣之高度為可調整的。 The system for manufacturing a carbon nanotube according to claim 1, wherein the height of the cassette is adjustable. 如申請專利範圍第1項所述之用於製造碳奈米管之系統,更包含:催化劑塗覆單元,其經組態用於在所述合成基板容納於所述台部分之所述基板容納部分中前以催化劑塗覆所述合成基板的頂部表面。 The system for manufacturing a carbon nanotube according to claim 1, further comprising: a catalyst coating unit configured to accommodate the substrate in the stage portion of the composite substrate The top surface of the composite substrate is coated with a catalyst in the middle portion. 如申請專利範圍第5項所述之用於製造碳奈米管之系統,其中所述催化劑塗覆單元包含:催化劑儲存槽,其具有經組態用於將預定量之催化劑供應至所述合成基板之頂部表面的輸出孔;以及刷式單元,其用於刷拭所述催化劑,使得經供應至所述合成基板之所述頂部表面的所述催化劑在所述合成基板之整個表面上具有均一厚度。 The system for manufacturing a carbon nanotube according to claim 5, wherein the catalyst coating unit comprises: a catalyst storage tank configured to supply a predetermined amount of catalyst to the synthesis An output aperture of a top surface of the substrate; and a brush unit for wiping the catalyst such that the catalyst supplied to the top surface of the composite substrate has uniformity over the entire surface of the composite substrate thickness. 如申請專利範圍第6項所述之用於製造碳奈米管之系統,其中所述催化劑儲存槽包含:固定量供應部分,其用於至所述合成基板之所述頂部表面的預定量之催化劑。 The system for manufacturing a carbon nanotube according to claim 6, wherein the catalyst storage tank comprises: a fixed amount supply portion for a predetermined amount to the top surface of the synthetic substrate catalyst. 如申請專利範圍第7項所述之用於製造碳奈米管之系統,其中所述固定量供應部分提供固定量空間,在所述空間處所述預定量之催化劑浸漬至所述催化劑儲存槽之所述輸出孔的上部中,且包括可移動之頂部屏蔽板以及底部屏蔽板;且其中當所述頂部屏蔽板被打開時,所述浸漬之催化劑 經由所述輸出孔供應至所述合成基板的所述頂部表面。 The system for manufacturing a carbon nanotube according to claim 7, wherein the fixed amount supply portion provides a fixed amount of space at which the predetermined amount of catalyst is impregnated into the catalyst storage tank. In the upper portion of the output aperture, and including a movable top shield and a bottom shield; and wherein the impregnated catalyst is when the top shield is opened Supply to the top surface of the composite substrate via the output aperture. 如申請專利範圍第7項所述之用於製造碳奈米管之系統,其中所述刷式單元包含:導軌,其安裝於所述合成基板的長度方向中;可移動本體,其經安裝以沿所述導軌為可移動的;以及塗覆刷,其安置於一台上,用於刷拭所述催化劑使得所述催化劑在所述合成基板之整個表面上具有均一厚度且藉由所述可移動本體可滑動地行進,其中所述塗覆刷之高度為可調整的。 The system for manufacturing a carbon nanotube according to claim 7, wherein the brush unit comprises: a guide rail installed in a longitudinal direction of the composite substrate; and a movable body mounted to Moving along the guide rail; and a coating brush disposed on a table for wiping the catalyst such that the catalyst has a uniform thickness over the entire surface of the composite substrate and by the The moving body is slidably advanced, wherein the height of the coating brush is adjustable. 如申請專利範圍第1項所述之用於製造碳奈米管之系統,更包含:擷取部分,其經組態用於接收經處理且在所述基板容納部分中等待之所述合成基板,以及擷取在所述合成基板上合成的碳奈米管。 The system for manufacturing a carbon nanotube according to claim 1, further comprising: a drawing portion configured to receive the synthetic substrate processed and waiting in the substrate housing portion And drawing a carbon nanotube synthesized on the synthetic substrate. 如申請專利範圍第10項所述之用於製造碳奈米管之系統,其中所述擷取部分包含:擷取容器,其中儲存自合成基板所擷取的碳奈米管;以及擷取單元,其用於將所述碳奈米管自所述合成基板之所述頂部表面刷拭至所述擷取容器。 The system for manufacturing a carbon nanotube according to claim 10, wherein the extracting portion comprises: a drawing container in which a carbon nanotube obtained from a synthetic substrate is stored; and a capturing unit And for brushing the carbon nanotube from the top surface of the synthetic substrate to the pick-up container. 如申請專利範圍第11項所述之用於製造碳奈米管之系統,其中所述擷取單元包含:擷取刷,其用於當自所述合成基板之所述頂部表面的 一個末端可滑動地行進至另一末端時,刷拭所述合成基板之所述頂部表面上的所述碳奈米管。 The system for manufacturing a carbon nanotube according to claim 11, wherein the extraction unit comprises: a pick-up brush for use from the top surface of the synthetic substrate The carbon nanotubes on the top surface of the composite substrate are brushed while one end slidably travels to the other end. 如申請專利範圍第1項所述之用於製造碳奈米管之系統,更包含:第一閘閥,其經組態用於將所述台部分與所述反應室連接;以及熱屏蔽構件,其安裝於所述第一閘閥與所述反應室之間以防止所述反應室內部之熱傳遞至所述第一閘閥。 The system for manufacturing a carbon nanotube according to claim 1, further comprising: a first gate valve configured to connect the stage portion to the reaction chamber; and a heat shielding member, It is installed between the first gate valve and the reaction chamber to prevent heat transfer inside the reaction chamber to the first gate valve. 如申請專利範圍第1項所述之用於製造碳奈米管之系統,其中所述反應室包含:反應管,其經組態用於提供容納合成基板的空間,所述反應管具有各自與凸緣連接之前端以及後端;密封構件,其提供於所述凸緣與所述反應管之間;加熱單元,其用於將所述反應管加熱至預定溫度;以及冷卻構件,其用於冷卻所述密封構件,其中所述加熱單元包含:中心加熱器,其用於加熱所述反應管的中心區域;邊緣加熱器,其用於加熱鄰近於所述反應管之所述前端以及所述後端的邊緣區域;以及加熱控制器,其用於獨立控制所述中心加熱器以及所述邊緣加熱器。 The system for manufacturing a carbon nanotube according to claim 1, wherein the reaction chamber comprises: a reaction tube configured to provide a space for accommodating a synthetic substrate, the reaction tubes having respective a flange connecting the front end and the rear end; a sealing member provided between the flange and the reaction tube; a heating unit for heating the reaction tube to a predetermined temperature; and a cooling member for Cooling the sealing member, wherein the heating unit comprises: a center heater for heating a central region of the reaction tube; an edge heater for heating the front end adjacent to the reaction tube and the An edge region of the rear end; and a heating controller for independently controlling the center heater and the edge heater. 如申請專利範圍第14項所述之用於製造碳奈米管之系統,其中所述邊緣加熱器包含: 第一加熱器,其用於加熱鄰近於與所述反應管之所述前端連接的所述凸緣之所述反應管的所述邊緣區域;以及第二加熱器,其用於加熱鄰近於與所述反應管之所述後端連接的所述凸緣之所述反應管的所述邊緣區域,其中所述加熱控制器獨立控制所述第一加熱器以及所述第二加熱器。 The system for manufacturing a carbon nanotube according to claim 14, wherein the edge heater comprises: a first heater for heating the edge region of the reaction tube adjacent to the flange connected to the front end of the reaction tube; and a second heater for heating adjacent to The edge region of the reaction tube of the flange to which the rear end of the reaction tube is connected, wherein the heating controller independently controls the first heater and the second heater. 如申請專利範圍第1項所述之用於製造碳奈米管之系統,其中所述第一輸送體包含:葉片,其經組態用於支撐所述合成基板;以及臂,其與所述葉片固定耦接且藉由驅動器為線性可移動的,其中所述葉片包含:板;以及多個突起,其自所述板向上突出以接觸所述合成基板。 The system for manufacturing a carbon nanotube according to claim 1, wherein the first conveying body comprises: a blade configured to support the synthetic substrate; and an arm, wherein The blade is fixedly coupled and linearly movable by the driver, wherein the blade comprises: a plate; and a plurality of protrusions projecting upwardly from the plate to contact the composite substrate. 如申請專利範圍第1項所述之用於製造碳奈米管之系統,其中所述第一輸送體包含:葉片,其經組態用於所述合成基板;臂,其與所述葉片固定耦接且藉由驅動器為線性可移動的;以及冷卻構件,其用於冷卻所述臂以當所述臂進入所述反應室中時防止所述臂之熱變形。 The system for manufacturing a carbon nanotube according to claim 1, wherein the first conveying body comprises: a blade configured to be used for the synthetic substrate; and an arm fixed to the blade Coupling and linearly movable by the driver; and a cooling member for cooling the arm to prevent thermal deformation of the arm when the arm enters the reaction chamber. 如申請專利範圍第1項所述之用於製造碳奈米管之系統,其中所述反應室包含:反應管,其經組態用於提供容納合成基板的空間,所 述反應管具有各自與凸緣連接之前端以及後端;加熱單元,其用於將所述反應管加熱至預定溫度;以及支撐框架,其提供至所述反應管中用於支撐所述合成基板,所述支撐框架包括多個框架,所述多個框架經提供以自所述反應管之內壁朝向所述反應管向內突出,且在上下方向中相互隔開用於支撐多個合成基板。 The system for manufacturing a carbon nanotube according to claim 1, wherein the reaction chamber comprises: a reaction tube configured to provide a space for accommodating a synthetic substrate, The reaction tube has a front end and a rear end each connected to the flange; a heating unit for heating the reaction tube to a predetermined temperature; and a support frame provided to the reaction tube for supporting the synthetic substrate The support frame includes a plurality of frames that are provided to protrude inward from the inner wall of the reaction tube toward the reaction tube, and are spaced apart from each other in the up and down direction for supporting a plurality of synthetic substrates . 如申請專利範圍第1項所述之用於製造碳奈米管之系統,其中所述反應室包含:反應管,其中製造碳奈米管;加熱單元,其用於加熱所述反應管;氣體供應管,其經組態用於將源氣供應至所述反應管中;以及加熱構件,其用於在所述源氣供應至所述反應管中前加熱源氣。 The system for manufacturing a carbon nanotube according to claim 1, wherein the reaction chamber comprises: a reaction tube in which a carbon nanotube is manufactured; a heating unit for heating the reaction tube; a supply tube configured to supply a source gas into the reaction tube; and a heating member for heating the source gas before the source gas is supplied into the reaction tube. 一種用於製造碳奈米管之系統,包含:反應室,其中執行在合成基板上製造碳奈米管之製程;台部分,其連接至所述反應室的一側,且具有與外部隔離之內部空間以防止自所述反應室卸載的所述合成基板接觸氧;第一輸送體,其安裝於所述台部分內部用於將合成基板裝載至所述反應室及自所述反應室卸載合成基板,所述第一輸送體僅設置於所述反應室之一側;基板容納部分,其中容納待裝載至所述反應室之所述 基板,或自所述反應室卸載之所述合成基板在其中等待;擷取部分,其用於自所述基板容納部分取出所述合成基板以擷取所述合成基板上所製造的碳奈米管;催化劑塗覆單元,其經組態用於在所述合成基板容納於所述台部分之所述基板容納部分中前以催化劑塗覆所述合成基板的頂部表面;以及第二輸送體,其用於在所述擷取部分與所述基板容納部分之間以及在所述催化劑塗覆單元與所述基板容納部分之間輸送所述合成基板。 A system for manufacturing a carbon nanotube comprising: a reaction chamber in which a process of manufacturing a carbon nanotube on a synthetic substrate is performed; a stage portion connected to one side of the reaction chamber and having an external isolation An internal space to prevent the synthetic substrate unloaded from the reaction chamber from contacting oxygen; a first transport body mounted inside the stage portion for loading a synthetic substrate into the reaction chamber and unloading the synthesis from the reaction chamber a substrate, the first transport body is disposed only on one side of the reaction chamber; and a substrate housing portion in which the chamber to be loaded into the reaction chamber is accommodated a substrate, or the composite substrate unloaded from the reaction chamber, waiting therein; a scooping portion for taking out the synthetic substrate from the substrate receiving portion to extract carbon nanowires fabricated on the synthetic substrate a catalyst coating unit configured to coat a top surface of the synthetic substrate with a catalyst before the synthetic substrate is housed in the substrate receiving portion of the stage portion; and a second transport body, It is used to transport the composite substrate between the scooping portion and the substrate receiving portion and between the catalyst applying unit and the substrate receiving portion. 如申請專利範圍第20項所述之用於製造碳奈米管之系統,其中所述基板容納部分包含:卡匣,其具有:第一支撐體,其中容納待裝載至所述反應室的合成基板;以及第二支撐體,其中容納自所述反應室卸載之合成基板。 The system for manufacturing a carbon nanotube according to claim 20, wherein the substrate accommodating portion comprises: a cassette having: a first support in which a synthetic to be loaded into the reaction chamber is accommodated a substrate; and a second support in which the composite substrate unloaded from the reaction chamber is contained. 如申請專利範圍第21項所述之用於製造碳奈米管之系統,其中所述第二支撐體之空間大於所述第一支撐體的空間。 The system for manufacturing a carbon nanotube according to claim 21, wherein a space of the second support is larger than a space of the first support. 如申請專利範圍第20項所述之用於製造碳奈米管之系統,其中所述台部分包含:室,其與外部隔離以防止自所述反應室卸載之所述合成基板接觸氧;以及氣體供應構件,其經組態用於將惰性氣體供應至所述室之內部空間。 The system for manufacturing a carbon nanotube according to claim 20, wherein the stage portion comprises: a chamber that is isolated from the outside to prevent the synthetic substrate unloaded from the reaction chamber from contacting oxygen; A gas supply member configured to supply an inert gas to an interior space of the chamber. 如申請專利範圍第20項所述之用於製造碳奈米管 之系統,所述系統更包含:第一閘閥,其經組態用於將所述台部分與所述反應室連接;以及熱屏蔽構件,其安裝於所述第一閘閥與所述反應室之間以防止所述反應室內部之熱傳遞至所述第一閘閥。 For the manufacture of carbon nanotubes as described in claim 20 The system further comprising: a first gate valve configured to connect the stage portion to the reaction chamber; and a heat shield member mounted to the first gate valve and the reaction chamber To prevent heat transfer inside the reaction chamber to the first gate valve. 如申請專利範圍第20項所述之用於製造碳奈米管之系統,其中所述台部分包括:第一區域,其經安置以鄰近於所述反應室,其中所述基板容納部分被安置;以及第二區域,其基於所述第一區域經安置以與所述反應室之相對位置處的所述反應室為共線的,其中所述第一輸送體被安置,其中所述第一區域包括:上區域,其經安置以與所述反應室以及所述基板容納部分為共線的;以及下區域,其在所述共線方向之垂直方向中自所述上區域延伸,其中所述基板容納部分包含:卡匣,其經提供用於容納合成基板且在所述上區域與所述下區域之間為可移動的。 The system for manufacturing a carbon nanotube according to claim 20, wherein the stage portion comprises: a first region disposed adjacent to the reaction chamber, wherein the substrate receiving portion is disposed And a second region that is collinear based on the reaction chamber at which the first region is disposed to be opposite the reaction chamber, wherein the first transport body is disposed, wherein the first region The region includes: an upper region disposed to be collinear with the reaction chamber and the substrate receiving portion; and a lower region extending from the upper region in a vertical direction of the collinear direction, wherein The substrate housing portion includes a cassette that is provided for receiving a composite substrate and is movable between the upper region and the lower region. 如申請專利範圍第25項所述之用於製造碳奈米管之系統,其中所述催化劑塗覆單元、所述第二輸送體以及所述擷取部分安置於所述台部分外部,其中所述第二輸送體基於所述第一區域的所述上區域 經安置以與所述下區域相對,且經安置於所述催化劑塗覆單元與所述擷取部分之間。 The system for manufacturing a carbon nanotube according to claim 25, wherein the catalyst coating unit, the second conveying body, and the drawing portion are disposed outside the table portion, wherein The second transport body is based on the upper region of the first region It is disposed opposite to the lower region and disposed between the catalyst coating unit and the scooping portion.
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