JP2005053709A - Method and apparatus for manufacturing carbon nanotube - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of directly growing a carbon nanotube suitable for uniform electron emission at a low cost. <P>SOLUTION: The method of manufacturing the carbon nanotube comprises a process of carrying in a conductive substrate A into a load-lock chamber 3 and hermetically sealing and evacuating the chamber, a process of evacuating a catalytic vapor deposition chamber 7 adjacent to the load lock chamber and carrying in the substrate into the chamber from the load lock chamber, a process of vapor-depositing a catalytic metal on the substrate in the catalytic vapor deposition chamber, a process for evacuating a carbon nanotube growth chamber 12 adjacent to the catalytic vapor deposition chamber and carrying in the substrate with the catalyst into the carbon nanotube growth chamber from the catalytic vapor deposition chamber, a process of forming the carbon nanotube on the substrate using a thermal CVD by electrically heating the conductive substrate with the catalyst in the presence of a gaseous starting material in the carbon nanotube growth chamber, a process of evacuating the carbon nanotube growth chamber after the growth of the carbon nanotube and introducing an inert gas and a process of carrying out the substrate with the carbon nanotube from the carbon nanotube growth chamber. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a carbon nanotube production method and apparatus. A carbon nanotube is a very fine single-layer or multi-layered tube (tube) substance formed by bonding carbon atoms in a network. An electron-emitting device using carbon nanotubes is applied to a field emission flat panel display (FED), an X-ray source, electron beam lithography, a display / lighting device, a gas decomposition apparatus, a sterilization / disinfection apparatus, and the like.
[0002]
In this specification (including claims) and drawings, upstream and downstream are based on the moving direction of the transport device, and the left side of FIG. 1 is the upstream side and the right side is the downstream side.
[0003]
[Prior art]
Compared with conventional electron emission materials such as Spindt-type emitters and diamond thin films made of silicon or molybdenum, carbon nanotubes are comprehensively superior in characteristics such as current density, drive voltage, robustness, and lifetime. It is currently the most promising electron source. This is because carbon nanotubes have a large aspect ratio (length-to-diameter ratio) and sharp tip, are chemically stable and mechanically tough, and have excellent stability at high temperatures. This is because it has advantageous physicochemical properties as a material for the emitting element.
[0004]
As a method for producing carbon nanotubes, by maintaining a stable DC arc discharge in helium with the gap between the two carbon electrodes kept at about 1 mm, the diameter of the carbon electrode is approximately the same as that of the anode carbon electrode. There is a method of forming a cylindrical deposit on the cathode tip. The inner core constituting the columnar deposit has columnar graphite which is a fibrous structure extending in the length direction of the deposit column, and the columnar graphite is an aggregate of carbon nanotubes. If this paste containing columnar graphite is formed in a predetermined pattern on the substrate surface by screen printing, an electron emission portion can be formed (see Patent Document 1). In the FED panel formed in this way, the direction and height of each carbon nanotube varies, so that the electric field applied to each carbon nanotube becomes non-uniform when an electric field is applied, resulting in field emission. Becomes non-uniform, and the display screen is rough and the luminance is insufficient.
[0005]
Instead of screen printing, a catalytic metal thin film is patterned on a silicon or glass substrate, and carbon nanotubes are grown in a brush shape by thermal CVD using this as a seed crystal, and this is applied to an electron-emitting device. Attempts have also been made.
[0006]
When carbon nanotubes are directly grown by thermal CVD, uniform electron emission is possible by appropriately controlling the catalyst arrangement and the CVD conditions, but the entire CVD reaction vessel is heated to a high temperature of about 650 to 800 ° C. This requires a long heating time and requires heavy equipment, resulting in high manufacturing costs.
[0007]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 11-162383.
[0008]
[Problems to be solved by the invention]
An object of the present invention is to realize a direct growth of carbon nanotubes suitable for uniform electron emission at a low cost in view of the above situation, and to achieve a low voltage drive and long life. It is an object of the present invention to provide a carbon nanotube manufacturing method and apparatus capable of performing the same.
[0009]
[Means for Solving the Problems]
The invention of claim 1
Carrying the conductive substrate into the load lock chamber, sealing the chamber and evacuating it,
Vacuuming the catalyst deposition chamber adjacent to the load lock chamber, and loading the substrate into the chamber from the load lock chamber;
Depositing catalyst metal on the substrate in the catalyst deposition chamber;
Vacuuming the carbon nanotube growth chamber adjacent to the catalyst deposition chamber, and carrying the substrate with the catalyst from the catalyst deposition chamber into the chamber;
Heating a conductive substrate with a catalyst in the presence of a source gas in a carbon nanotube growth chamber by energization, and generating carbon nanotubes on the substrate by a thermal CVD method;
After the growth of the carbon nanotubes, a step of evacuating the carbon nanotube growth chamber and introducing an inert gas;
A method for producing carbon nanotubes, comprising a step of carrying out a substrate with carbon nanotubes from a carbon nanotube growth chamber.
[0010]
The invention of claim 2
A load lock chamber (3) having an inlet (2) in the upstream side wall (1);
A catalyst vapor deposition chamber (7) adjacent to the load lock chamber (3) via an upstream partition wall (5) having an inlet (4) and having a metal vapor deposition port (6) and its power source (25);
A carbon nanotube growth chamber (12) adjacent to the catalyst vapor deposition chamber (7) via a downstream partition wall (9) having an inlet (8) and having an outlet (11) on the downstream side wall (10);
A shut-off door (13) for hermetically closing the inlet (2) of the load lock chamber (3), the inlet (4) of the catalyst deposition chamber (7), the inlet (8) and the outlet (11) of the carbon nanotube growth chamber (12). ) (14) (15) (16)
These chambers (3) through the inlet (2) of the load lock chamber (3), the inlet (4) of the catalyst deposition chamber (7), the inlet (8) and the outlet (11) of the carbon nanotube growth chamber (12) 7) A transfer device (17) arranged through (12) and carrying the conductive substrate (A);
A feeding electrode (18) (19) that is in contact with both ends of the conductive substrate (A) carried by the transfer device (17) in the carbon nanotube growth chamber (12), and its power source (20);
A source gas supply pipe (21) disposed in the carbon nanotube growth chamber (12);
The method according to claim 1, comprising a vacuum pump (22) (23) (24) connected to the load lock chamber (3), the catalyst deposition chamber (7) and the carbon nanotube growth chamber (12), respectively. This is an apparatus for producing carbon nanotubes.
[0011]
The invention of claim 3
In the reactor, the conductive substrate with catalyst is heated by energization in the presence of a raw material gas, and the carbon nanotube is produced on the substrate by a thermal CVD method.
[0012]
The invention of claim 4
A reactor (33) having a source gas supply pipe (31) and a gas discharge pipe (32), a conductive substrate (A) with a catalyst (C) disposed in the reactor (33), and the substrate (A The carbon nanotube production apparatus for carrying out the method according to claim 3, comprising power supply electrodes (35) and (36) respectively attached to both ends of the above) and a power source (37).
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described.
[0014]
In the invention of claim 1, the step of depositing the catalytic metal on the substrate may be performed by a known method. The substrate may be a metal substrate, a substrate made of a conductive material such as carbon fiber or metal fiber, or an insulating plate such as glass or ceramic covered with a conductive film. The carbon fiber is obtained by firing and carbonizing a fiber made of polyacrylonitrile, pitch or the like at 1000 to 1500 ° C. in an inert atmosphere.
The sheet | seat which consists of carbon fiber is a sheet | seat which shape | molded such a fiber as a material, and can use a commercial item. The metal fiber is made of steel, stainless steel, titanium, aluminum, tungsten, molybdenum or the like. The sheet | seat which consists of metal fibers is a sheet | seat which shape | molded such a fiber as a material, and can use a commercial item.
[0015]
The catalyst metal is iron, cobalt, nickel, and the like, and can take the form of a complex such as an iron carbonyl complex (pentacarbonyliron or the like), a metal alkoxide (Fe (OEt) ₃ or the like), or the like. The metal complex or metal alkoxide may be supplied in a solution. The solvent may be acetone, alcohol or the like. The concentration of the metal complex or metal alkoxide in the solution may be, for example, 1 to 5% by weight. A thin film made of catalytic metal particles is formed on carbon fibers or metal fibers. The thickness of the thin film is preferably 1 to 100 nm because it is difficult to form metal particles by heating if it is too thick. Next, when this thin film is heated preferably at 650 to 800 ° C., preferably under reduced pressure or in a non-oxidizing atmosphere, metal catalyst particles having a diameter of about 1 to 50 nm are formed.
[0016]
In the carbon nanotube production step, the operation order of supplying the source gas to the carbon nanotube growth chamber and energizing the substrate with the catalyst is arbitrary, and either may be performed first. The source gas is usually acetylene (C ₂ H ₂ ) gas, but may be other aliphatic hydrocarbon gas such as methane gas or ethane gas. In the case of acetylene, carbon nanotubes having a multilayer structure and a thickness of 12 to 38 nm are formed in the shape of brush hairs on the substrate surface. The source gas may be supplied to the reaction zone through a source gas supply pipe in a state diluted with an inert gas such as helium, argon or xenon. The gas supply may be performed continuously or intermittently. The operating conditions of the chemical vapor deposition method are preferably a temperature of 650 to 800 ° C., preferably 700 to 750 ° C., and a time of 1 to 10 minutes under atmospheric pressure.
[0017]
The inert gas introduced into the carbon nanotube growth chamber after the growth of the carbon nanotubes may be helium, argon, xenon, or the like.
[0018]
The length of the carbon nanotube is preferably 1 to 10 μm, the diameter is preferably 20 to 30 nm, and the distance between the carbon nanotubes is preferably 100 to 150 nm.
[0019]
When a feeding electrode is brought into contact with both ends of the substrate with catalyst and current is passed through the substrate, the substrate generates heat, and the surface temperature preferably rises to 700 to 750 ° C. As a result, carbon nanotubes are generated by thermal CVD using the catalyst particles as seed crystals, and grow in a brush shape.
[0020]
In the invention of claim 2, the conveying device is preferably a roller conveyor. The metal vapor deposition port is preferably arranged in the catalyst vapor deposition chamber so that the substrate on the transfer device faces from above. The power source may be alternating current or direct current.
[0021]
Each of the pair of feeding electrodes provided in the carbon nanotube growth chamber is composed of a plurality of roller electrodes. When one end of the substrate is sandwiched between the one end side feeding electrode composed of a plurality of roller electrodes and the conveying device, and the other end portion of the substrate is sandwiched between the other end side feeding electrode composed of a plurality of roller electrodes and the conveying device, A current flows through the conductive substrate due to the voltage applied in between, thereby generating heat, the surface temperature rises, and as described above, carbon nanotubes are generated by the thermal CVD method using the catalyst particles as seed crystals, It grows like a brush.
[0022]
In the invention of claim 3, the operation order of supplying the source gas to the reactor and energizing the substrate with the catalyst is arbitrary, and either may be performed first. The conductive substrate with catalyst may be prepared by a known method. The substrate, the catalyst, and the like may be the same as those described in the step of depositing the catalytic metal on the substrate in the first aspect of the invention.
[0023]
In the invention of claim 4, a temperature sensor is attached to the conductive substrate, an output controller is attached to the power source, the temperature sensor detects the temperature of the substrate, and the output controller receives the signal to control the output of the power source. However, it is preferable to keep the temperature of the substrate within a predetermined range. The power source may be alternating current or direct current. A current applied to the conductive substrate by the voltage applied between the two electrodes by the power supply causes the substrate to generate heat, the surface temperature rises, and carbon nanotubes are generated by thermal CVD using the catalyst particles as seed crystals. Grows into a shape.
[0024]
Next, the present invention will be specifically described based on examples.
[0025]
Example 1
1 and 2, the carbon nanotube production apparatus is
A load lock chamber (3) having an inlet (2) in the upstream side wall (1);
A catalyst vapor deposition chamber (7) adjacent to the load lock chamber (3) via an upstream partition wall (5) having an inlet (4) and having a metal vapor deposition port (6) and its power source (25);
A carbon nanotube growth chamber (12) adjacent to the catalyst vapor deposition chamber (7) via a downstream partition wall (9) having an inlet (8) and having an outlet (11) on the downstream side wall (10);
The inlet (2) of the upstream side wall (1) of the load lock chamber (3), the inlet (4) of the upstream partition wall (5) of the catalyst deposition chamber (7), the downstream partition wall (9) of the carbon nanotube growth chamber (12) ), The shut-off doors (13), (14), (15), and (16) that hermetically close the outlet (11) of the downstream side wall (10) of the carbon nanotube growth chamber (12),
The inlet (2) of the upstream side wall (1) of the load lock chamber (3), the inlet (4) of the upstream partition wall (5) of the catalyst deposition chamber (7), the downstream partition wall (9) of the carbon nanotube growth chamber (12) ) Through the chamber (3) (7) (12) through the outlet (11) of the downstream side wall (10) of the carbon nanotube growth chamber (12) and the conductive substrate. A roller conveyor (17) carrying (A);
A feeding electrode (18) (19) that contacts each end of the conductive substrate (A) carried by the roller conveyor (17) in the carbon nanotube growth chamber (12), and its power source (20);
A source gas supply pipe (21) disposed in the carbon nanotube growth chamber (12);
A vacuum pump (22) (23) (24) connected to the load lock chamber (3), the catalyst vapor deposition chamber (7), and the carbon nanotube growth chamber (12), respectively.
[0026]
The conductive substrate (A) is a substrate (200 mm × 200 mm × 0.4 mm) made of a carbon fiber sheet.
[0027]
The metal vapor deposition port (6) is arranged in the catalyst vapor deposition chamber (7) so as to face the substrate (A) on the roller conveyor (17) from above.
[0028]
The blocking doors (13), (14), (15), and (16) are provided on the upstream side wall (1), the upstream partition wall (5), the downstream partition wall (9), and the downstream side wall (10), respectively, so that they can be raised and lowered. Open and close the inlet and outlet.
[0029]
Each of the pair of feeding electrodes (18) and (19) provided in the carbon nanotube growth chamber (12) is composed of a plurality of (for example, three) roller electrodes. One end of the substrate (A) is sandwiched between the one end side feeding electrode (18) composed of these roller electrodes and the roller conveyor (17), and the other end side feeding electrode composed of a plurality of roller electrodes and the substrate on the roller conveyor (17). When the other end of (A) is sandwiched, current flows through the conductive substrate (A) due to the voltage applied between the two electrodes by the power source, thereby generating heat and increasing the surface temperature, Carbon nanotubes are generated by the thermal CVD method using the catalyst particles as seed crystals, and grow in a brush shape.
[0030]
In the carbon nanotube production apparatus configured as described above, first, the conductive substrate (A) is carried into the load lock chamber (3) by the roller conveyor (17), and the inlet (2) of the chamber (3) and the catalyst vapor deposition chamber (7). The shut-off doors (13) and (14) at the inlet (4) of the engine are closed to seal the load lock chamber (3), and the chamber (3) is evacuated by the pump (22).
[0031]
Next, the catalyst deposition chamber (7) adjacent to the load lock chamber (3) is evacuated by the pump (23), and the substrate (A) is carried into the chamber (7) from the load lock chamber (3) by the roller conveyor (17). To do. Then, catalytic metal (Fe) is deposited on the substrate (A) from the metal vapor deposition port (6) for 1 minute in the catalyst vapor deposition chamber (7).
[0032]
Next, the carbon nanotube growth chamber (12) adjacent to the catalyst vapor deposition chamber (7) is evacuated by a pump (24), and the catalyst-carrying substrate (A) is transferred from the catalyst vapor deposition chamber (7) to the roller conveyor (17). ). Then, the raw material gas is supplied from the raw material gas supply pipe (21) through the valve (26) to the carbon nanotube growth chamber (12) in a state in which acetylene gas is diluted with helium gas (acetylene gas: helium gas = 1: 9). . The feeding electrodes (18) and (19) are brought into contact with both ends of the substrate with catalyst (A), and a current of 50A is passed from the power source (20) to the substrate (A) at a voltage of 20V for 10 minutes. As a result, Joule's law, that is, calorific value (cal) = 0.24 × current (A) × voltage (V) × time (sec.)
As a result, the substrate (A) generates heat, the substrate surface temperature rises to about 700 ° C., the acetylene gas decomposes at the substrate surface, and carbon nanotubes are generated by the thermal CVD method using the catalyst particles as seed crystals. grow up.
[0033]
After the growth of the carbon nanotubes, the carbon nanotube growth chamber (12) is evacuated by the pump (24), and helium gas is introduced from the source gas supply pipe (21). Finally, the substrate (A) with carbon nanotubes is carried out from the carbon nanotube growth chamber (12) by the roller conveyor (17).
[0034]
The carbon nanotubes grew on the entire surface of the substrate (A) and had a length of about 10 μm and a diameter of about 20 nm.
[0035]
FIG. 3 schematically shows the structure of an FED using the conductive substrate having carbon nanotubes obtained as described above as an electron-emitting device.
[0036]
In the figure, a copper deposited film is formed on the back surface of a conductive substrate having carbon nanotubes, this substrate is used as a cathode electrode, and the carbon nanotubes on the substrate are used as emitters. (41) and (42) are a pair of upper and lower glass plates, a cathode electrode (43) is provided on the upper surface of the lower glass plate (42), and a number of carbon nanotubes serving as emitters on the upper surface of the cathode electrode (43) The discharge element (44) which consists of is formed. Above the cathode electrode (43), a gate electrode (48) made of mesh metal having a thickness of 0.1 mm is provided so as to surround the discharge element (44) with an insulator layer (47) interposed therebetween. An anode electrode (45) made of a transparent film is attached to the lower surface of the upper glass plate (41), and a fluorescent material layer (46) is provided on the lower surface of the anode electrode (45). The entire structure is disposed in a sealed container, and the container is sucked and sealed to a degree of vacuum of the order of 10 ⁻⁶ Torr. A gate voltage is applied between the cathode electrode (43) and the gate electrode (48), and an anode voltage is applied between the cathode electrode (43) and the anode electrode (45). As a result, electrons are emitted from the tip of the discharge element (44) composed of a large number of carbon nanotubes, pass through between the gate electrodes (48), and go up to the anode electrode (45) through the fluorescent material layer (46). I can receive it. In the FED configured as described above, a luminance of 500 cd / m ² was obtained with a power of 5 w.
[0037]
Example 2
In FIG. 4, the carbon nanotube production apparatus is
A reactor (33) having a source gas supply pipe (31) and a gas discharge pipe (32), a conductive substrate (A) with a catalyst (C) disposed in the reactor (33), and the substrate (A ) And feed electrodes (35) and (36) respectively attached to both ends thereof, and a power source (37) thereof.
[0038]
The conductive substrate (A) is a substrate (200 mm × 200 mm × 0.4 mm) made of a carbon fiber sheet. The conductive substrate (A) with the catalyst (C) is obtained by immersing the substrate in an acetone solution of Fe (OEt) ₃ and then drying it.
[0039]
The source gas supply pipe (31) is connected to an acetylene generator (39) via a trap (38), and a helium tank (34) is connected to the trap (38). Acetylene gas, which is a raw material gas, is bubbled through water in a trap (38), diluted with cerium gas, and supplied to the reactor (33).
[0040]
A current applied to the conductive substrate (A) due to the voltage applied between the electrodes (35) and (36) by the power source (37) causes the substrate (A) to generate heat, resulting in an increase in surface temperature and catalyst particles. As a seed crystal, carbon nanotubes are produced by a thermal CVD method and grow in a brush shape.
[0041]
A temperature sensor (40) is attached to the conductive substrate (A), an output controller (51) is attached to the power source, and the temperature sensor (40) detects the temperature of the substrate (A) and outputs the signal to the output controller. (51) receives and controls the output of the power source to keep the temperature of the substrate (A) within a predetermined range.
[0042]
In the carbon nanotube manufacturing apparatus having the above-described configuration, a current 20A is applied to the substrate (A) from the power source (37) to the substrate (A) at a voltage of 15 V for 10 minutes through the feeding electrodes (35) and (36) at both ends of the substrate (A) with the catalyst (C). Shed. As a result, Joule's law, that is, calorific value (cal) = 0.24 × current (A) × voltage (V) × time (sec.)
As a result, the substrate (A) generates heat, and the substrate surface temperature rises to about 700 ° C. In this state, when acetylene gas is diluted with helium gas (acetylene gas: helium gas = 1: 9) as a source gas from the source gas supply pipe (31) to the reactor (33), the surface portion of the high temperature substrate is supplied. In this case, the acetylene gas is decomposed, carbon nanotubes are produced by the thermal CVD method using the catalyst particles as seed crystals, and grow in a brush shape.
[0043]
The carbon nanotubes grew on the entire surface of the substrate (A) and had a length of about 10 μm and a diameter of about 20 nm.
[0044]
An FED using the conductive substrate having carbon nanotubes obtained as described above as an electron-emitting device was constructed in the same manner as in Example 1. In this FED, a luminance of 500 cd / m ² was obtained with a power of 5 w.
[0045]
【The invention's effect】
According to the present invention, uniform electron emission, low voltage driving, and long life can be achieved. In addition, by energizing a conductive substrate with a catalyst, heat is generated in this and carbon nanotubes are grown by thermal CVD, so that energy costs are greatly reduced compared to methods that raise the temperature of the entire reaction zone atmosphere. The cost of the product can be reduced.
[Brief description of the drawings]
FIG. 1 is a vertical sectional view schematically showing a carbon nanotube production apparatus of Example 1. FIG.
2 is a cross-sectional view taken along line II-II in FIG.
FIG. 3 is a vertical sectional view schematically showing the structure of an FED using carbon nanotubes as electron-emitting devices.
4 is a vertical sectional view schematically showing a carbon nanotube production apparatus of Example 2. FIG.
[Explanation of symbols]
(1): upstream side wall (2): inlet (3): load lock chamber (4): inlet (5): upstream partition wall (6): metal deposition port (7): catalyst deposition chamber (8): inlet ( 9): Downstream partition wall (10): Downstream side wall (11): Outlet (12): Carbon nanotube growth chamber (13) (14) (15) (16): Shut-off door (17): Transfer device (18) ( 19): Feed electrode (20): Power source (21): Source gas supply pipe (22) (23) (24): Vacuum pump (25): Power source (31): Source gas supply pipe (32): Gas discharge pipe (33): Reactor (35): (36) Feed electrode (37): Power source (C): Catalyst (A): Conductive substrate

Claims (4)

Carrying the conductive substrate into the load lock chamber, sealing the chamber and evacuating it,
Vacuuming the catalyst deposition chamber adjacent to the load lock chamber, and loading the substrate into the chamber from the load lock chamber;
Depositing catalyst metal on the substrate in the catalyst deposition chamber;
Vacuuming the carbon nanotube growth chamber adjacent to the catalyst deposition chamber, and carrying the substrate with the catalyst from the catalyst deposition chamber into the same chamber;
A step of heating a conductive substrate with a catalyst in the presence of a source gas in a carbon nanotube growth chamber by energization, and generating carbon nanotubes on the substrate by a thermal CVD method;
After the growth of the carbon nanotubes, a step of evacuating the carbon nanotube growth chamber and introducing an inert gas;
A method for producing carbon nanotubes, comprising a step of carrying out a substrate with carbon nanotubes from a carbon nanotube growth chamber. A load lock chamber (3) having an inlet (2) in the upstream side wall (1);
A catalyst vapor deposition chamber (7) adjacent to the load lock chamber (3) via an upstream partition wall (5) having an inlet (4) and having a metal vapor deposition port (6) and its power source (25);
A carbon nanotube growth chamber (12) adjacent to the catalyst vapor deposition chamber (7) via a downstream partition wall (9) having an inlet (8) and having an outlet (11) on the downstream side wall (10);
A shut-off door (13) for hermetically closing the inlet (2) of the load lock chamber (3), the inlet (4) of the catalyst deposition chamber (7), the inlet (8) and the outlet (11) of the carbon nanotube growth chamber (12). ) (14) (15) (16)
These chambers (3) through the inlet (2) of the load lock chamber (3), the inlet (4) of the catalyst deposition chamber (7), the inlet (8) and the outlet (11) of the carbon nanotube growth chamber (12) 7) A transfer device (17) arranged through (12) and carrying the conductive substrate (A);
A feeding electrode (18) (19) that is in contact with both ends of the conductive substrate (A) carried by the transfer device (17) in the carbon nanotube growth chamber (12), and its power source (20);
A source gas supply pipe (21) disposed in the carbon nanotube growth chamber (12);
The method according to claim 1, comprising a vacuum pump (22) (23) (24) connected to the load lock chamber (3), the catalyst deposition chamber (7) and the carbon nanotube growth chamber (12), respectively. For producing carbon nanotubes. A method for producing carbon nanotubes, wherein a conductive substrate with a catalyst is heated by energization in the presence of a source gas in a reactor, and carbon nanotubes are generated on the substrate by a thermal CVD method. A reactor (33) having a source gas supply pipe (31) and a gas discharge pipe (32), a conductive substrate (A) with a catalyst (C) disposed in the reactor (33), and the substrate (A The apparatus for producing carbon nanotubes for carrying out the method according to claim 3, comprising power supply electrodes (35) (36) respectively attached to both ends of the above) and a power source (37).

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