TWI458090B - Structure and method for manufacturing a crystalline layer on a patterned insulating layer - Google Patents

Structure and method for manufacturing a crystalline layer on a patterned insulating layer Download PDF

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TWI458090B
TWI458090B TW100148016A TW100148016A TWI458090B TW I458090 B TWI458090 B TW I458090B TW 100148016 A TW100148016 A TW 100148016A TW 100148016 A TW100148016 A TW 100148016A TW I458090 B TWI458090 B TW I458090B
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layer
insulating layer
patterned
strained crystalline
strained
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TW201327808A (en
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Nat Inst Chung Shan Science & Technology
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Structure for covering strained crystal layer on patterned insulating layer and manufacturing method thereof

The invention relates to a structure for coating a strained crystal layer on a patterned insulating layer and a manufacturing method thereof, and further improving the lattice between the substrate and the epitaxial layer by combining the patterned insulating layer and the strained crystal layer The effect of mismatch.

At present, when a group III-V compound semiconductor is epitaxially grown on a different type of substrate such as a germanium substrate, the difference in lattice constant or the number of thermal expansion between the two is large, and thus crystal defects are generated, which is also called anisotropic epitaxy ( Hereroepitaxial) The lattice distortion caused by deposition. The so-called "heterostatic epitaxial" deposition layer is an epitaxial or single crystal layer deposited on a single crystal substrate having a different composition from the single crystal substrate. When the deposited epitaxial layer is pressed to produce a lattice structure having at least two orientations identical to the single crystal substrate below it, it is referred to as "twisting" when it is different from its original lattice constant. Among them, the lattice distortion occurs because when the film is deposited in such a way that its lattice structure will match the underlying single crystal substrate, the atoms in the deposited layer will leave the original position, that is, the lattice of a large amount of material alone. The position originally occupied by the structure. For example, depositing an epitaxial epitaxial layer of tantalum-containing material such as tantalum or tantalum itself on a single crystal germanium substrate generally produces a compressive lattice distortion because the deposited germanium-containing material has a lattice constant greater than that of the germanium substrate. Large, the degree of distortion is related to the thickness of the deposited layer and the degree of lattice inconsistency between the deposited material and the underlying layer. In order to reduce the lattice defects, scholars from all over the world have no need to use them. The method can be divided into two ways. One is to reduce the stress by multi-layer epitaxial structure, and the other is to use yellow light to develop and The contact area between the epitaxial layer and the substrate is reduced by etching.

See U.S. Patent No. 5,461,243, entitled "Substrate for Tensilely Strained Semiconductor", which discloses a multi-layered strained layer deposited on its surface, and a very thin layer of tantalum on the ceria layer. However, this patent does not describe the technique in detail, and thus limits the scope of application thereafter.

See also U.S. Patent No. 5,906,951, entitled 〝Strained Si/SiGe layers on Insulator, which is incorporated herein by reference for all of the same as the same as the same. However, this patent does not describe the technique in detail, and thus limits the scope of application thereafter.

Referring again to Taiwan Patent No. I297959, entitled Epitaxial Structure and Manufacturing Method Thereof, an epitaxial structure and a method of fabricating the same are disclosed. The epitaxial layer on the substrate is vertically and accurately etched by a dry etching technique such as inductively coupled plasma (ICP) to obtain a nanometer of nanometer size and pitch. A homogeneous epitaxial process is performed on the nano column, and a defect-free secondary epitaxial layer can be obtained by controlling the lateral and longitudinal growth rates, and the yield of subsequent component fabrication is effectively improved. However, both the nano-pillar structure and the dry etching technique increase the cost and thus limit the range of applications thereafter.

The job is the reason, the applicant is carefully experimenting and researching, and a perseverance spirit, finally developed a structure of the strained crystalline layer on the patterned insulating layer and its manufacturing method, by patterning the insulating layer and strain The combination of the crystalline layers can further improve the lattice mismatch between the substrate and the epitaxial layer.

The main object of the present invention is to provide a structure for coating a strained crystalline layer on a patterned insulating layer and a manufacturing method thereof, which can be further improved between the substrate and the epitaxial layer by combining the patterned insulating layer and the strained crystalline layer. Lattice mismatch question.

For the purpose of the present invention, a structure for coating a strained crystalline layer on a patterned insulating layer and a method for fabricating the same according to the present invention comprise: a substrate; an insulating layer formed on the substrate, the insulating layer The layer has a patterned grain; a strained crystalline layer formed on the insulating layer; and an epitaxial layer formed on the strained crystalline layer to pattern the insulating layer between the substrate and the epitaxial layer It has a preferred lattice matching constant.

In the above structure of the present invention, the strained crystal layer is selected from the group consisting of a germanium (SiGe) material.

In the above structure of the present invention, the germanium (SiGe) material comprises a tensile crucible and a compression crucible.

In the above structure of the present invention, the tensile enthalpy concentration is between 5% and 20%.

In the above structure of the present invention, the concentration of the compressed ruthenium is between 50% and 80%.

In the above structure of the present invention, the insulating layer is selected from the group consisting of an ion implantation process or a furnace tube diffusion.

Another structural form includes: a substrate; an insulating layer formed on the substrate; a buffer layer formed on the insulating layer; a strained crystalline layer formed on the buffer layer; and a formed on The strained layer on the strained crystalline layer.

In another embodiment of the invention, the buffer layer is selected from the group consisting of a germanium (SiGe) material.

In another embodiment of the invention, the germanium (SiGe) material comprises a tensile crucible and a compression crucible.

In another structural form of the present invention, the concentration of the tensile enthalpy is between Between 5% and 20%.

In another embodiment of the invention, in another embodiment of the invention, the concentration of the compressed ruthenium is between 50% and 80%.

The manufacturing method comprises the steps of: (a) providing a substrate; (b) depositing an insulating layer on the surface of the substrate; (c) depositing a strained crystalline layer on the surface of the insulating layer; and (d) depositing a Lei A seed layer is on the surface of the strained crystalline layer.

In the manufacturing method of the present invention, the step (b) further comprises forming the insulating layer to form a patterned pattern for improving the mismatch of the lattice constant between the substrate and the epitaxial layer.

In the manufacturing method of the present invention, the formation of the patterned texture may employ a laser processing technique.

In the manufacturing method of the present invention, the production of the step (b) is selected from the group consisting of an insulating layer selected from an ion implantation process or a furnace tube diffusion.

In the manufacturing method of the present invention, the strained crystal layer of the step (c) is selected from the group consisting of a germanium (SiGe) material.

In the manufacturing method of the present invention, the bismuth (SiGe) material of the step (c) comprises a tensile enthalpy and a compression enthalpy.

In the manufacturing method of the present invention, the tensile enthalpy concentration is between 5% and 20%.

In the manufacturing method of the present invention, the concentration of the compressed ruthenium is between 50% and 80%.

The above and other objects, features and advantages of the present invention will become more <RTIgt; as follows.

While the invention may be embodied in various forms, the embodiments illustrated in the drawings It is not intended to limit the invention to the particular embodiments illustrated and/or described.

Please refer to FIG. 1 , which is a schematic structural view of a strained crystalline layer on a patterned insulating layer according to the present invention. The structure 100 for overlying the strained crystalline layer on the patterned insulating layer mainly comprises: a substrate 110. An insulating layer 120, a strained crystalline layer 130, and an epitaxial layer 140, wherein the substrate 110 is selected from the group consisting of germanium (Si), sapphire, tantalum carbide (SiC), aluminum nitride (AlN), or diamond. Any one of the group consisting of 矽 is selected as the best; the insulating layer 120 is formed on the substrate 110, wherein the material of the insulating layer 120 is selected from the group consisting of yttrium oxide (SiOx) and tantalum nitride. Any of a group of oxides such as (SiNx), titanium oxide (TiOx), or aluminum oxide (AlOx), and cerium oxide (SiOx) is most preferable. In general, the thickness of the insulating layer 120 and the substrate 110 is not critical to the invention, but it is preferred to control the insulating layer 120 having a thickness of about 1 micrometer; the strained crystalline layer 130 is formed on the insulating layer 120; A crystal layer 140 is formed over the strained crystal layer 130.

Please refer to FIG. 2, which illustrates a method for processing a strained crystalline layer on a patterned insulating layer according to the present invention. The method includes the following steps: Step 210: providing a substrate 110; Step 220: depositing an insulating layer 120 on the surface of the substrate 100; Step 230: depositing a strained crystalline layer 130 on the surface of the insulating layer 120; and step 240: depositing an epitaxial layer 140 on the surface of the strained crystalline layer 130.

The material of the substrate 110 is selected from the group consisting of bismuth (Si), sapphire, tantalum carbide (SiC), aluminum nitride (AlN) or diamond, and bismuth is preferred. It should be noted that the insulating layer 120 can be selected from an ion implantation process or a furnace tube diffusion, and the ion implantation process is optimal, wherein the ions used in the ion implantation process can be boron, phosphorus, and Arsenic, argon, hydrogen, helium, nitrogen, oxygen, indium, etc.

In an embodiment of the present invention, the insulating layer 120 has a patterned pattern 121 for improving the lattice constant of the substrate 110 and the epitaxial layer 140, thereby preventing the epitaxial layer 140 from peeling off, thereby reducing the thickness of the epitaxial layer 140. The defect density is not limited to the tantalum substrate, that is, any one of a group consisting of sapphire, tantalum carbide (SiC), aluminum nitride (AlN), or diamond.

Moreover, the formation of the patterned grain 121 adopts a laser cutting processing technology, wherein the micro-machining etching technology of the germanium material plays an important role in the micro-electromechanical system and the semiconductor industry, and the conventional common germanium material processing research such as: plasma etching RIE And ICP mode, wet etching KOH etching, laser processing of Nd:YAG laser, Ecimer laser or femtosecond laser...etc.

However, CO 2 lasers are generally not absorbed by the tantalum material and are generally not absorbed by the tantalum material and subjected to any etching process. In one embodiment of the present invention, the ruthenium etching is mainly performed by a composite method of changing the absorption wavelength of the ruthenium substrate material to a range of 10.6 μm from the CO 2 laser. Still further, the auxiliary system using CO 2 laser processing glass (glass assisted CO 2 laser processing, referred GACLAP) silicon materials, glass test piece is placed from below, reuse sandwiched with two test pieces to make close contact, and adjust Ray The focus of the light is focused, so that the focus is focused on the surface of the silicon wafer, and the laser power, moving speed and number of etchings are changed for processing, which can be achieved under suitable processing parameters. Since the beam is focused on the surface of the silicon wafer test piece, the wavelength of the CO 2 laser is 10.6 μm, which is a wavelength that can penetrate into the germanium material. The bottom glass can absorb the CO 2 laser energy and heat the germanium material at the same time. High-temperature tantalum materials are capable of absorbing 10.6 μm laser and being etched due to the small energy gap and the appearance of microstructure defect defects. The glass also has an insulating effect, so that the laser beam heat source is concentrated on the enamel material test piece and raised to a high temperature to achieve an etching and drilling effect, and a patterned structure 120 is further formed. The depth of the patterned structure 120 is between 0.1 μm and 5 μm. In addition, the laser cutting process of the present invention can also reduce the internal stress of the insulating layer 120, thereby repairing defects.

The strained crystalline layer 130 is selected from the group consisting of a germanium (SiGe) material. The method of growing the strained crystal layer is, for example, a molecular beam epitaxy method, a selective epitaxial method, a chemical vapor deposition epitaxy method, or a chemical vapor deposition method. Due to the interaction between the thin film layers having different lattice constants in the relaxed state, the semiconductor thin film layer having a larger crystal lattice in the relaxed state is under the condition of shrinkage strain, and the semiconductor thin film layer having a smaller lattice constant is in the Under the condition of compressive strain, a strain-balanced structure is formed. That is, in the stacked layer structure composed of the thin film layer of the tantalum layer and the strained crystal layer, if the lattice constant of the strained crystal layer 130 is larger than the lattice constant of the tantalum layer, the strain of the strained crystal layer 130 is in the biaxial Under compressive strain, the 矽 layer is under biaxial tensile strain and vice versa. The foregoing step forms a defect region in the ruthenium layer, so that the direction in which the diffusion of the relaxed film layer grows is directed toward the substrate, not toward the relaxed film layer, so that a relaxed film layer can be obtained. Further, the bismuth (SiGe) strained crystalline layer of the present invention 130 includes a stretch 矽锗 and a compression 矽锗. Wherein the concentration of the tensile enthalpy is between 5% and 20%; the concentration of the compressed cerium is between 50% and 80%; in addition, the thickness of the strained crystalline layer 130 It is between 0.01 and 5 microns. Finally, an epitaxial layer 140 is deposited on the surface of the strained crystalline layer 130, wherein the invention can be applied to techniques for epitaxially growing a material layer such as GaN, GaAs, InP, GaAlAs, InGaAs, AlN, AlGaN or even SiGe. . In addition, the epitaxial method of the epitaxial layer 140 may be selected from the group consisting of metal metal vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE), vapor phase epitaxy (VPE), and liquid phase epitaxy (LPE). Among them, the speed and mass production capacity of LPE and VPE are better than MOCVD, but the control ability of epitaxial thinness and flatness is not as good as MOCVD. However, MOCVD has higher cost and lower yield. Moreover, the disadvantages of raw materials are not easy to obtain; based on the above factors, the epitaxial method applied in different products is also different, and LPE (liquid phase epitaxy) is commonly used on conventional brightness LEDs (such as GaP, GaAsP and AlGaAs). High-brightness LEDs (such as AlGaInP and GaN) require more stringent quality, preferably by organometallic vapor phase epitaxy (MOCVD).

Next, please refer to FIG. 3, which shows another structural diagram 100 of the present invention for covering the strained crystalline layer on the patterned insulating layer, which is not much different from the first one, and the difference is: A buffer layer 122 is further disposed on the insulating layer 120, that is, the buffer layer 122 is formed on the insulating layer 120. Wherein, the buffer layer is also selected from a germanium (SiGe) material, and also has a structure of a tensile layer portion and a strained crystalline layer 130 of a compressed germanium portion. The two portions of the strained crystalline layer 130 can be epitaxially grown or bonded to the top of a relaxed buffer layer 122. The strain strains in the two portions have a germanium concentration by epitaxial growth of the tensile system, which is smaller than the relaxation buffer layer 122. The erbium concentration, as well as the epitaxial growth compressive strain enthalpy, has a enthalpy concentration that is higher than the erbium concentration of the erbium relaxation buffer layer 122. As a result, the enthalpy concentration of the compressive strain 总是 is always higher than the tensile strain 矽锗.

<Example 1>

First, the cerium (Si) substrate is subjected to removal of impurities such as fine dust, metal ions, and organic substances on the substrate via RCA Standard Clean. Next, a 1.2 μm thick ceria insulating layer is deposited on the surface of the germanium (Si) substrate by an ion implantation process, wherein the ions used in the ion implantation process are boron ions; then, the glass-assisted CO 2 laser is used. A glass assisted CO 2 laser processing (GACLAP) substrate was formed to form a patterned structure having a depth of 0.3 μm. Then, a strained crystal layer having a thickness of 3 μm of germanium (SiGe) was deposited by chemical vapor deposition. Wherein the bismuth (SiGe) material comprises a tensile enthalpy and a compressed enthalpy, and the enthalpy concentration of the enthalpy is 5%, and the enthalpy concentration of the enthalpy is 50%. Finally, an epitaxial layer of aluminum gallium indium phosphide (AlGaInP) is deposited by organometallic vapor phase epitaxy (MOCVD). The structure and the method can prevent the epitaxial layer from peeling off on the patterned insulating layer, solve the problem that the lattice constant of the substrate and the epitaxial layer does not match, and can make the dislocation density to be 1×10 5 /cm 2 or less.

<Example 2>

Embodiment 2 is substantially as in the step of Embodiment 1, and the main difference is that a germanium (SiGe) buffer layer is added between the insulating layer and the strained crystal layer. The structure and the method can prevent the epitaxial layer from peeling off on the patterned insulating layer, solve the problem that the lattice constant of the substrate and the epitaxial layer does not match, and can make the misalignment density to be 0.3×10 5 /cm 2 or less.

<Example 3>

Example 3 is substantially as the step of Example 1, the main difference is: the stretch 矽 The concentration of ruthenium was changed to 15%, and the concentration of ruthenium was changed to 70%. The structure and the method can prevent the epitaxial layer from peeling off on the patterned insulating layer, solve the problem that the lattice constant of the substrate and the epitaxial layer does not match, and further improve the crystal quality of the epitaxial layer and reduce the dislocation density. 22% or more.

<Example 4>

Example 4 is substantially as in the step of Example 1, the main difference being that the depth of the patterned structure is changed to 3 μm. By this structure and method, the dislocation density can be reduced by 27% or more.

The structure of the present invention for coating a strained crystalline layer on a patterned insulating layer and a method for fabricating the same have the following effects: 1. The strained crystalline layer of the present invention can prevent the epitaxial layer from peeling off on the patterned insulating layer. Solving the problem that the lattice constant of the substrate and the epitaxial layer does not match; 2. The laser processing technique of the present invention can reduce the internal stress of the insulating layer and repair the defect; 3. The laser processing technology of the present invention can make the laser The crystal quality of the crystal layer is further improved. 4. Compared with the prior art, the present invention can achieve a dislocation density of 1×10 5 /cm 2 or less by combining the patterned insulating layer and the strained crystal layer.

While the present invention has been described in its preferred embodiments, it is not intended to limit the scope of the invention, and various modifications and changes can be made without departing from the spirit and scope of the invention. As explained above, various modifications and variations can be made without departing from the spirit of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100‧‧‧ Structure of a strained crystalline layer over a patterned insulating layer

110‧‧‧Substrate

120‧‧‧Insulation

121‧‧‧Graphic lines

122‧‧‧buffer layer

130‧‧‧ strained crystalline layer

140‧‧‧ epitaxial layer

210~240‧‧‧Steps

The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the invention. A schematic diagram of the structure of the strained crystalline layer on the patterned insulating layer.

Fig. 2 is a flow chart showing the fabrication of a strained crystalline layer on a patterned insulating layer according to the present invention.

Figure 3 is a schematic view showing another structure of the strained crystalline layer on the patterned insulating layer of the present invention.

100‧‧‧ Structure of a strained crystalline layer over a patterned insulating layer

110‧‧‧Substrate

120‧‧‧Insulation

121‧‧‧Graphic lines

130‧‧‧ strained crystalline layer

140‧‧‧ epitaxial layer

Claims (13)

  1. A structure for overlying a strained crystalline layer on a patterned insulating layer, comprising: a substrate; an insulating layer formed on the substrate, wherein the insulating layer has a patterned grain; a strained crystalline layer, Formed on the insulating layer, the strained crystal layer is selected from a germanium (SiGe) material; and an epitaxial layer is formed on the strained crystal layer to insulate between the substrate and the epitaxial layer The patterned trace of the layer has a preferred lattice matching constant; wherein the germanium (SiGe) material comprises a stretched germanium and a compressed germanium.
  2. The structure of the patterned insulating layer overlying the strained crystalline layer as described in claim 1, wherein the tensile enthalpy concentration is between 5% and 20%.
  3. The structure of the patterned insulating layer overlying the strained crystalline layer as described in claim 2, wherein the compressed crucible has a concentration of between 50% and 80%.
  4. The structure of the patterned insulating layer overlying the strained crystalline layer as described in claim 1 wherein the insulating layer is selected from the group consisting of an ion implantation process or furnace tube diffusion.
  5. A structure for overlying a strained crystalline layer on a patterned insulating layer, comprising: a substrate; an insulating layer formed on the substrate; a buffer layer formed on the insulating layer; a strained crystalline layer, Formed on the buffer layer; and an epitaxial layer formed on the strained crystal layer; wherein the buffer layer is selected from a germanium (SiGe) material, and the germanium (SiGe) material comprises a pull Stretching and compressing.
  6. The structure of the patterned insulating layer overlying the strained crystalline layer as described in claim 5, wherein the tensile enthalpy concentration is between 5% and 20%.
  7. The structure of the overlying strained crystalline layer of the patterned insulating layer as described in claim 5, wherein the compressed germanium has a germanium concentration of between 50% and 80%.
  8. A method for fabricating a strained crystalline layer on a patterned insulating layer, the method comprising: (a) providing a substrate; (b) depositing an insulating layer on a surface of the substrate such that the insulating layer forms a patterned texture, For improving the mismatch of the lattice constant between the substrate and the epitaxial layer; (c) depositing a strained crystalline layer on the surface of the insulating layer; and (d) depositing an epitaxial layer on the strained crystalline layer a surface; wherein the formation of the patterned texture is laser processing technology.
  9. The method for manufacturing a patterned insulating layer overlying a strained crystalline layer according to Item 8 of the application, wherein the step (b) is selected from the group consisting of an ion implantation process or a furnace tube diffusion. Way to make.
  10. The method for manufacturing a patterned insulating layer overlying a strained crystalline layer as described in claim 8 wherein the strained crystalline layer of the step (c) is selected from the group consisting of a germanium (SiGe) material.
  11. The method for manufacturing a patterned strained crystalline layer on a patterned insulating layer according to claim 10, wherein the germanium (SiGe) material of the step (c) comprises a tensile crucible and a compressed crucible. .
  12. The method for manufacturing a patterned strained crystalline layer on a patterned insulating layer according to claim 11, wherein the tensile enthalpy concentration is between 5% and 20%. between.
  13. The method for manufacturing a patterned strained crystalline layer on a patterned insulating layer according to claim 11, wherein the compressed germanium has a concentration of between 50% and 80%.
TW100148016A 2011-12-22 2011-12-22 Structure and method for manufacturing a crystalline layer on a patterned insulating layer TWI458090B (en)

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Citations (3)

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Publication number Priority date Publication date Assignee Title
TW200623408A (en) * 2004-09-13 2006-07-01 Ibm Method of creating deffect free high ge content (>25%) sige-on-insulator (SGOI) substrates using wafer bonding techniques
TW200941559A (en) * 2007-12-28 2009-10-01 Sumitomo Chemical Co Semiconductor substrate and method of making same
TW201118960A (en) * 2009-10-27 2011-06-01 Taiwan Semiconductor Mfg Method of forming an integrated circuit structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200623408A (en) * 2004-09-13 2006-07-01 Ibm Method of creating deffect free high ge content (>25%) sige-on-insulator (SGOI) substrates using wafer bonding techniques
TW200941559A (en) * 2007-12-28 2009-10-01 Sumitomo Chemical Co Semiconductor substrate and method of making same
TW201118960A (en) * 2009-10-27 2011-06-01 Taiwan Semiconductor Mfg Method of forming an integrated circuit structure

Non-Patent Citations (1)

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Title
林宏年,"局部與全面形變矽通道互補式金氧半之材料、製程與元件特性分析(Ⅰ)",奈米通訊,第12卷第1期,2005,第44-49頁 *

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