Claims (7)
一種發光元件，係使用在具有第1導電型之第1半導體層上形成有具有與該第1導電型相反之導電型即第2導電型之第2半導體層之半導體發光機能層，具備在該半導體發光機能層之形成有該第2半導體層側之主面上與該第2半導體層直接接觸之透明電極、形成在該透明電極上之絕緣層、形成在該絕緣層上且在設在該絕緣層中之第1開口部與該第1半導體層直接接觸之第1電極層、及形成在該絕緣層上且在設在該絕緣層中之第2開口部與該透明電極直接接觸之第2電極層，俯視呈大致矩形，其特徵在於：該第1開口部及該第2開口部具備沿著與該大致矩形之對向二邊平行延伸之二條直線分別形成之部分，在該透明電極形成有複數個透明電極開口部，該透明電極開口部在該二條直線之間延伸於與該二條直線垂直之方向；該第1電極層及該第2電極層分別具備呈與該二條直線分別平行延伸之線狀形態之線狀部與寬度較該線狀部粗之焊墊部；該第1開口部、該第2開口部中之一方形成在被該二邊夾著之中央部，該第1開口部、該第2開口部中之另一方形成在該二邊側之兩端部側；在該第1電極層之焊墊部及在該第2電極層之焊墊部係分別形成於在該第1開口部、該第2開口部中之一方延伸之線上與該二邊垂直之二邊側之兩端部側；該第1開口部、該第2開口部中之另一方，在與該第1
開口部、該第2開口部中之一方直接連接之該第1電極層、該第2電極層之一方之與設有該焊墊部側對向之邊側，具備沿著該對向之邊側之折曲部；該第1開口部、該第2開口部中之一方之前端部與該折曲部之前端部之間之距離，和在設有該折曲部之該第1開口部、該第2開口部中之另一方沿著與該大致矩形之對向二邊平行延伸之二條直線形成之部分與至該第1開口部、該第2開口部中之一方為止之間隔大致相等。
A light-emitting element comprising a semiconductor light-emitting function layer having a second semiconductor layer of a second conductivity type having a conductivity type opposite to the first conductivity type formed on a first semiconductor layer having a first conductivity type; The semiconductor light-emitting function layer is formed with a transparent electrode directly contacting the second semiconductor layer on the main surface of the second semiconductor layer side, an insulating layer formed on the transparent electrode, and being formed on the insulating layer. a first electrode layer in which the first opening of the insulating layer directly contacts the first semiconductor layer, and a first electrode formed on the insulating layer and in contact with the transparent electrode in the second opening provided in the insulating layer The second electrode layer has a substantially rectangular shape in plan view, and the first opening portion and the second opening portion have portions formed along two straight lines extending in parallel with the opposite sides of the substantially rectangular shape, and the transparent electrode is formed at the transparent electrode Forming a plurality of transparent electrode openings, the transparent electrode openings extending between the two straight lines in a direction perpendicular to the two straight lines; the first electrode layer and the second electrode layer respectively having the two straight lines a linear portion having a linear shape extending in parallel and a pad portion having a width larger than the linear portion; and one of the first opening portion and the second opening portion is formed at a central portion sandwiched by the two sides The other of the first opening and the second opening are formed on both end sides of the two sides, and the pad portion of the first electrode layer and the pad portion of the second electrode layer are respectively The both ends of the first opening and the second opening are formed on the two sides of the first opening and the second opening, and the other of the first opening and the second opening In with the first
One side of the first electrode layer and the second electrode layer directly connected to one of the opening portion and the second opening portion and the side opposite to the side where the pad portion side is provided are provided along the opposite side a side bent portion; a distance between the first opening portion, the front end portion of the second opening portion and the front end portion of the bent portion, and the first opening portion where the bent portion is provided The other of the second openings is substantially equal to the interval between the first opening and the second opening along a line formed by two straight lines extending in parallel with the two sides of the substantially rectangular shape. .
如申請專利範圍第1項之發光元件，其中，該二邊為沿著該大致矩形之長邊方向之二邊，該第1開口部及該第2開口部分別形成在該二邊側之端部側。
The light-emitting element according to claim 1, wherein the two sides are along two sides in a longitudinal direction of the substantially rectangular shape, and the first opening and the second opening are respectively formed at ends of the two sides Side.
如申請專利範圍第1項之發光元件，其中，在該第1電極層之焊墊部及在該第2電極層之焊墊部係形成在該第1開口部、該第2開口部中之一方延伸之線上。
The light-emitting element of the first aspect of the invention, wherein the pad portion of the first electrode layer and the pad portion of the second electrode layer are formed in the first opening portion and the second opening portion One side extends on the line.
如申請專利範圍第1至3項中任一項之發光元件，其中，該第1半導體層係藉由磊晶成長形成在基板上。
The light-emitting element according to any one of claims 1 to 3, wherein the first semiconductor layer is formed on the substrate by epitaxial growth.
如申請專利範圍第4項之發光元件，其中，於在該線狀部延伸之一方向之延長上之該基板上，隔著在該基板上半導體層被部分除去後之元件分離區域形成有二極體；該第1電極層及該第2電極層越過該元件分離區域在形成有該二極體之區域上延伸，使用該半導體發光機能層形成之發光二極體與該二極體並聯以使順向成為相反方向。
The light-emitting element of claim 4, wherein the substrate is formed on the substrate in an extension of one direction of the linear portion, and the element isolation region is partially removed by the semiconductor layer on the substrate. a polar body; the first electrode layer and the second electrode layer extend over the element isolation region over a region where the diode is formed, and the light-emitting diode formed using the semiconductor light-emitting function layer is connected in parallel with the diode Make the forward direction the opposite direction.
如申請專利範圍第5項之發光元件，其中，該焊墊部
係形成在形成有該二極體之區域上。
A light-emitting element according to claim 5, wherein the pad portion
It is formed on the region where the diode is formed.
如申請專利範圍第1至3項中任一項之發光元件，其中，該第1半導體層係以n型氮化物半導體構成，該第2半導體層係以p型氮化物半導體構成。The light-emitting element according to any one of claims 1 to 3, wherein the first semiconductor layer is made of an n-type nitride semiconductor, and the second semiconductor layer is made of a p-type nitride semiconductor.