KR20100087466A - Light emitting diode device and method fabricating the same - Google Patents
Light emitting diode device and method fabricating the same Download PDFInfo
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- KR20100087466A KR20100087466A KR1020090006471A KR20090006471A KR20100087466A KR 20100087466 A KR20100087466 A KR 20100087466A KR 1020090006471 A KR1020090006471 A KR 1020090006471A KR 20090006471 A KR20090006471 A KR 20090006471A KR 20100087466 A KR20100087466 A KR 20100087466A
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Abstract
Description
The present invention relates to a light emitting diode device, and to provide a light emitting diode device and a method of manufacturing the light emitting efficiency can be improved by disposing a contact electrode on the light emitting region and a reflection electrode below the contact electrode.
The light emitting diode device emits light based on recombination of electrons and holes, and is used as a light source for electronic products. In particular, the light emitting diode device is widely used in small portable products such as a backlight of a liquid crystal display, a mobile phone keypad and a camera flash.
The light emitting diode may have different light to emit light depending on the semiconductor material. For example, an AlGaInP material is used for a red light emitting diode device, and silicon carbide (SiC) and a group III nitride semiconductor, particularly gallium nitride (GaN), are used for a blue light emitting diode. Since such nitride-based semiconductor light emitting diodes can be grown on a sapphire substrate, which is generally an insulated substrate, a horizontal structure in which both the p-type electrode and the n-type electrode, which are both electrodes, are arranged horizontally on the side of the crystal grown semiconductor layer. Has
Specifically, the horizontal structured light emitting diode device includes a light emitting structure consisting of an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially disposed on a substrate, and a p-type electrode and an n-type electrode arranged horizontally on the light emitting structure. do. In this case, since the p-type electrode and the n-type electrode should be electrically connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively, the p-type electrode is formed on the p-type semiconductor layer, and the n-type electrode is the active layer. And a portion of the p-type semiconductor layer is etched and disposed on the exposed n-type semiconductor layer.
However, in order to electrically connect the n-type electrode and the n-type semiconductor layer to each other, by removing a portion of the p-type semiconductor layer and the active layer, the light emitting area may be reduced, and eventually luminous efficiency may be lowered.
Moreover, the n-type electrode should have a contact electrode having a minimum area for wire bonding regardless of the size of the light emitting diode device. As a result, there is a limit in reducing the exposed area of the etch region of the p-type semiconductor layer and the active layer, that is, the n-type semiconductor layer.
SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting diode device and a method of manufacturing the same, which can improve light emission efficiency by disposing a contact electrode on a light emitting region and providing a reflective electrode under the contact electrode.
In order to achieve the above technical problem, an aspect of the present invention provides a light emitting diode device. The light emitting diode device includes a substrate including a first region and a second region; An n-type semiconductor layer disposed on the first and second regions; An active layer disposed on the n-type semiconductor layer corresponding to the first region; A p-type semiconductor layer disposed on the active layer; An insulating layer disposed on the substrate including the p-type semiconductor layer, the insulating layer having a first opening exposing a portion of the n-type semiconductor layer and a second opening exposing a portion of the p-type semiconductor layer; An n-type electrode including a finger electrode disposed on the n-type semiconductor layer exposed by the first opening, and a contact electrode electrically connected to the finger electrode and disposed on the insulating layer of the first region; A reflective electrode interposed between the insulating layer and the contact electrode; And a p-type electrode electrically connected to the p-type semiconductor layer through the second opening.
The reflective electrode may be formed of at least one selected from the group consisting of Al, Ag, Rh, Cr, Au, W, Ti, Pt, and at least two alloys thereof.
In addition, the line width of the finger electrode may have a range of 1㎛ to 10㎛.
In addition, the finger electrode and the contact electrode may be integrally formed.
In addition, the reflective electrode may have the same area or a smaller area than the contact electrode.
The display device may further include a transparent electrode disposed on the p-type semiconductor layer.
In addition, the insulating layer may be formed to cover side surfaces of the active layer and the p-type semiconductor layer.
Another aspect of the present invention to achieve the above technical problem provides a method of manufacturing a light emitting diode device. The manufacturing method includes providing a substrate comprising a first region and a second region; Sequentially forming an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the first and second regions; Removing a portion of the p-type semiconductor layer and the active layer to expose the n-type semiconductor layer on the first region; Forming an insulating layer having a first opening exposing a portion of the n-type semiconductor layer and a second opening exposing a portion of the p-type semiconductor layer on the substrate including the p-type semiconductor layer; Forming a reflective electrode on the insulating layer of the first region; And a finger electrode disposed on the n-type semiconductor layer exposed by the first opening, and a contact electrode electrically connected to the finger electrode and disposed on the reflective electrode. And forming a p-type electrode disposed on the exposed p-type semiconductor layer.
Here, the transparent electrode disposed on the p-type semiconductor layer may be further formed.
In addition, the reflective electrode may be formed of at least one selected from the group consisting of Al, Ag, Rh, Cr, Au, W, Ti, Pt, and at least two alloys thereof.
In the light emitting diode device of the present invention and a method for manufacturing the same, the contact electrode is disposed on the light emitting region and the reflective electrode is provided below the contact electrode, thereby minimizing the reduction of the light emitting area while securing the wire bonding area. The reflective electrode may emit light formed in the active layer corresponding to the lower portion of the contact electrode to the outside, thereby improving light emission efficiency.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings of the light emitting diode device. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.
1 is a plan view of a light emitting diode device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.
1 and 2, a light emitting diode device includes a
The
The
The n-
In addition, a buffer layer such as AlN / GaN (not shown) may be further disposed between the n-
The
The p-
The
The
The
Here, the insulating
The insulating
The insulating
The n-
The
The
As the
Here, examples of the material for forming the
In addition, the
The p-
In addition, a lower surface of the
Accordingly, in the light emitting diode device according to the embodiment of the present invention, the contact electrode is disposed on the light emitting region and the reflecting electrode is provided under the contact electrode, thereby minimizing the reduction of the light emitting area while securing the wire bonding area. The reflective electrode may emit light formed in the active layer corresponding to the lower portion of the contact electrode to the outside, thereby improving light emission efficiency.
3 to 7 are cross-sectional views illustrating a method of manufacturing a light emitting diode device according to a second embodiment of the present invention.
Referring to FIG. 3, in order to manufacture a light emitting diode device, a
The n-
In addition, a buffer layer (not shown) such as AlN / GaN may be further formed between the n-
Referring to FIG. 4, portions of the
Thereafter, a
Referring to FIG. 5, an insulating
In order to form the insulating
Referring to FIG. 6, the
Referring to FIG. 7, after forming the
In order to form the n-
Therefore, in the embodiment of the present invention, a portion of the n-type electrode, that is, a contact electrode for wire bonding is formed on the light emitting region and a reflective electrode is formed below the contact electrode, thereby improving the light emitting area of the light emitting diode device. And the luminous efficiency could be improved.
In addition, the n-type electrode and the p-type electrode has been described as being prepared by etching one conductive film, but is not limited thereto. That is, after forming at least one of the n-type electrode and the p-type electrode, the other electrode may be formed. In this case, the n-type electrode and the p-type electrode may be made of different materials.
1 is a plan view of a light emitting diode device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.
3 to 7 are cross-sectional views illustrating a method of manufacturing a light emitting diode device according to a second embodiment of the present invention.
<Explanation of symbols for the main parts of the drawings>
100 substrate 110 n-type semiconductor layer
120: active layer 130: p-type semiconductor layer
140: insulating layer 150: n-type electrode
150a:
160: p-type electrode 170: reflective electrode
180: transparent electrode
Claims (10)
Priority Applications (1)
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KR1020090006471A KR20100087466A (en) | 2009-01-28 | 2009-01-28 | Light emitting diode device and method fabricating the same |
Applications Claiming Priority (1)
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KR1020090006471A KR20100087466A (en) | 2009-01-28 | 2009-01-28 | Light emitting diode device and method fabricating the same |
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KR20100087466A true KR20100087466A (en) | 2010-08-05 |
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KR1020090006471A KR20100087466A (en) | 2009-01-28 | 2009-01-28 | Light emitting diode device and method fabricating the same |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101220130B1 (en) * | 2011-03-30 | 2013-01-11 | 산켄덴키 가부시키가이샤 | Light emitting element |
KR20140032794A (en) * | 2012-09-07 | 2014-03-17 | 엘지디스플레이 주식회사 | Light emitting device and method of fabricating the same |
KR20190094016A (en) * | 2018-02-02 | 2019-08-12 | 엘지전자 주식회사 | Car lamp using semiconductor light emitting device |
-
2009
- 2009-01-28 KR KR1020090006471A patent/KR20100087466A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101220130B1 (en) * | 2011-03-30 | 2013-01-11 | 산켄덴키 가부시키가이샤 | Light emitting element |
KR20140032794A (en) * | 2012-09-07 | 2014-03-17 | 엘지디스플레이 주식회사 | Light emitting device and method of fabricating the same |
KR20190094016A (en) * | 2018-02-02 | 2019-08-12 | 엘지전자 주식회사 | Car lamp using semiconductor light emitting device |
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