KR20100087466A - Light emitting diode device and method fabricating the same - Google Patents

Light emitting diode device and method fabricating the same Download PDF

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Publication number
KR20100087466A
KR20100087466A KR1020090006471A KR20090006471A KR20100087466A KR 20100087466 A KR20100087466 A KR 20100087466A KR 1020090006471 A KR1020090006471 A KR 1020090006471A KR 20090006471 A KR20090006471 A KR 20090006471A KR 20100087466 A KR20100087466 A KR 20100087466A
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South Korea
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electrode
semiconductor layer
type semiconductor
light emitting
type
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KR1020090006471A
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Korean (ko)
Inventor
김현경
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삼성엘이디 주식회사
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Priority to KR1020090006471A priority Critical patent/KR20100087466A/en
Publication of KR20100087466A publication Critical patent/KR20100087466A/en

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Abstract

PURPOSE: A light emitting diode device and a manufacturing method thereof are provided to improve luminous efficiency by arranging a contact electrode on the luminous area and including a reflection electrode on the lower side of a contact electrode. CONSTITUTION: An n type semiconductor layer is arranged on first and second areas. An active layer is arranged on the n type semiconductor layer corresponding to the first area. A p type semiconductor layer(130) is arranged on the active layer. An insulation layer is arranged on the substrate including the p type semiconductor layer and includes a first opening and a second opening. An n type electrode includes a finger electrode(150a) and a contact electrode. A reflection electrode(170) is interposed between the insulation layer and the contact electrode. The p type electrode is electrically connected to the p type semiconductor layer through the second opening.

Description

LIGHT EMITTING DIODE DEVICE AND METHOD FABRICATING THE SAME}

The present invention relates to a light emitting diode device, and to provide a light emitting diode device and a method of manufacturing the light emitting efficiency can be improved by disposing a contact electrode on the light emitting region and a reflection electrode below the contact electrode.

The light emitting diode device emits light based on recombination of electrons and holes, and is used as a light source for electronic products. In particular, the light emitting diode device is widely used in small portable products such as a backlight of a liquid crystal display, a mobile phone keypad and a camera flash.

The light emitting diode may have different light to emit light depending on the semiconductor material. For example, an AlGaInP material is used for a red light emitting diode device, and silicon carbide (SiC) and a group III nitride semiconductor, particularly gallium nitride (GaN), are used for a blue light emitting diode. Since such nitride-based semiconductor light emitting diodes can be grown on a sapphire substrate, which is generally an insulated substrate, a horizontal structure in which both the p-type electrode and the n-type electrode, which are both electrodes, are arranged horizontally on the side of the crystal grown semiconductor layer. Has

Specifically, the horizontal structured light emitting diode device includes a light emitting structure consisting of an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially disposed on a substrate, and a p-type electrode and an n-type electrode arranged horizontally on the light emitting structure. do. In this case, since the p-type electrode and the n-type electrode should be electrically connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively, the p-type electrode is formed on the p-type semiconductor layer, and the n-type electrode is the active layer. And a portion of the p-type semiconductor layer is etched and disposed on the exposed n-type semiconductor layer.

However, in order to electrically connect the n-type electrode and the n-type semiconductor layer to each other, by removing a portion of the p-type semiconductor layer and the active layer, the light emitting area may be reduced, and eventually luminous efficiency may be lowered.

Moreover, the n-type electrode should have a contact electrode having a minimum area for wire bonding regardless of the size of the light emitting diode device. As a result, there is a limit in reducing the exposed area of the etch region of the p-type semiconductor layer and the active layer, that is, the n-type semiconductor layer.

SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting diode device and a method of manufacturing the same, which can improve light emission efficiency by disposing a contact electrode on a light emitting region and providing a reflective electrode under the contact electrode.

In order to achieve the above technical problem, an aspect of the present invention provides a light emitting diode device. The light emitting diode device includes a substrate including a first region and a second region; An n-type semiconductor layer disposed on the first and second regions; An active layer disposed on the n-type semiconductor layer corresponding to the first region; A p-type semiconductor layer disposed on the active layer; An insulating layer disposed on the substrate including the p-type semiconductor layer, the insulating layer having a first opening exposing a portion of the n-type semiconductor layer and a second opening exposing a portion of the p-type semiconductor layer; An n-type electrode including a finger electrode disposed on the n-type semiconductor layer exposed by the first opening, and a contact electrode electrically connected to the finger electrode and disposed on the insulating layer of the first region; A reflective electrode interposed between the insulating layer and the contact electrode; And a p-type electrode electrically connected to the p-type semiconductor layer through the second opening.

The reflective electrode may be formed of at least one selected from the group consisting of Al, Ag, Rh, Cr, Au, W, Ti, Pt, and at least two alloys thereof.

In addition, the line width of the finger electrode may have a range of 1㎛ to 10㎛.

In addition, the finger electrode and the contact electrode may be integrally formed.

In addition, the reflective electrode may have the same area or a smaller area than the contact electrode.

The display device may further include a transparent electrode disposed on the p-type semiconductor layer.

In addition, the insulating layer may be formed to cover side surfaces of the active layer and the p-type semiconductor layer.

Another aspect of the present invention to achieve the above technical problem provides a method of manufacturing a light emitting diode device. The manufacturing method includes providing a substrate comprising a first region and a second region; Sequentially forming an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the first and second regions; Removing a portion of the p-type semiconductor layer and the active layer to expose the n-type semiconductor layer on the first region; Forming an insulating layer having a first opening exposing a portion of the n-type semiconductor layer and a second opening exposing a portion of the p-type semiconductor layer on the substrate including the p-type semiconductor layer; Forming a reflective electrode on the insulating layer of the first region; And a finger electrode disposed on the n-type semiconductor layer exposed by the first opening, and a contact electrode electrically connected to the finger electrode and disposed on the reflective electrode. And forming a p-type electrode disposed on the exposed p-type semiconductor layer.

Here, the transparent electrode disposed on the p-type semiconductor layer may be further formed.

In addition, the reflective electrode may be formed of at least one selected from the group consisting of Al, Ag, Rh, Cr, Au, W, Ti, Pt, and at least two alloys thereof.

In the light emitting diode device of the present invention and a method for manufacturing the same, the contact electrode is disposed on the light emitting region and the reflective electrode is provided below the contact electrode, thereby minimizing the reduction of the light emitting area while securing the wire bonding area. The reflective electrode may emit light formed in the active layer corresponding to the lower portion of the contact electrode to the outside, thereby improving light emission efficiency.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings of the light emitting diode device. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a plan view of a light emitting diode device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

1 and 2, a light emitting diode device includes a substrate 100, an n-type semiconductor layer 110, an active layer 120, a p-type semiconductor layer 130, an insulating layer 140, and an n-type electrode 150. ), A reflective electrode 170, and a p-type electrode 160.

The substrate 100 may be made of a material suitable for growing a nitride semiconductor single crystal. Examples of the substrate 100 may include a sapphire substrate, a silicon carbonate (SiC) substrate, a nitride substrate, and the like.

The substrate 100 may be divided into a first region 100a and a second region 100b. Here, the first region 100a may be a light emitting region in which light is formed, and the second region 100b may be a non-light emitting region in which light is not formed.

The n-type semiconductor layer 110 may be disposed on the first region 100a and the second region 100b of the substrate 100. The n-type semiconductor layer 110 may be formed of a semiconductor material having an Al x In y Ga (1-x-y) N composition formula, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1. For example, the n-type semiconductor layer 110 may be formed of a GaN layer or a GaN / AlGaN layer doped with n-type conductive impurities. Examples of the n-type impurity may be Si, Ge, Se, Te, and C.

In addition, a buffer layer such as AlN / GaN (not shown) may be further disposed between the n-type semiconductor layer 110 and the substrate 100 to improve lattice mismatch.

The active layer 120 is disposed on the n-type semiconductor layer 110 corresponding to the first region 100a. That is, the active layer 120 exposes a portion of the p-type semiconductor layer 130 corresponding to the second region 100b. The active layer 120 may be a semiconductor material having an Al x In y Ga (1-x-y) N composition formula, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1. For example, the active layer 120 may be formed of an undoped InGaN layer having a multi-well structure.

The p-type semiconductor layer 130 is disposed on the active layer 120. That is, the p-type semiconductor layer 130 is disposed to correspond to the first region 100a and is formed to expose a portion of the n-type semiconductor layer 110. Here, the p-type semiconductor layer 130 may be a semiconductor material having an Al x In y Ga (1-xy) N composition formula, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1. . For example, the p-type semiconductor layer 130 may be formed of a GaN layer or a GaN / AlGaN layer doped with a p-type conductive impurity. Examples of the p impurity may be Mg, Zn, Be and the like.

The transparent electrode 180 may be further disposed on the p-type semiconductor layer 130. The transparent electrode 180 may serve to improve light transmittance or a light diffusion effect. The transparent electrode 180 may be a conductive material that may transmit light, such as indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO).

The insulating layer 140 is disposed on the substrate 100 including the p-type semiconductor layer 130. That is, the insulating layer 140 may be disposed on the p-type semiconductor layer 130 and on the n-type semiconductor layer 110 of the second region 100b exposed from the p-type semiconductor layer 130. .

The insulating layer 140 insulates the p-type semiconductor layer 130 and the n-type electrode 150, which will be described later, to prevent short defects between the p-type semiconductor layer 130 and the n-type electrode 150, which will be described later. do. Here, when the light emitting diode device includes the transparent electrode 180, the insulating layer 140 serves to insulate the transparent electrode 180 and the n-type electrode 150 from each other.

Here, the insulating layer 140 is not only on the substrate 100 including the p-type semiconductor layer 130, but also the side surface of the active layer 120 and the p-type semiconductor layer 130, in addition to the transparent It may be formed to cover the side of the electrode 180. As a result, the n-type electrode 150 may be completely insulated from the p-type semiconductor layer 130.

The insulating layer 140 may have a first opening 141 exposing a portion of the n-type semiconductor layer 110 and a second opening 142 exposing a portion of the p-type semiconductor layer 130. Can be. Here, when the transparent electrode 180 is disposed on the p-type semiconductor layer 130, the second opening 142 may expose the transparent electrode 180.

The insulating layer 140 may be formed of an insulating material, for example, a silicon nitride film or a silicon oxide film.

The n-type electrode 150 is electrically connected to the finger electrode 150a disposed on the n-type semiconductor layer 110 exposed by the first opening 141 and the finger electrode 150a. The contact electrode 150b is disposed on the insulating layer 140 of one region 100a. In this case, the contact electrode 150b may be insulated from the n-type semiconductor layer 110 or the transparent electrode 180 by the insulating layer 140.

The finger electrode 150a and the contact electrode 150b may be made of the same material. In addition, the finger electrode 150a and the contact electrode 150b may be integrally formed.

The contact electrode 150b is electrically connected to the outside by wire bonding to receive a current. The finger electrode 150a supplies the current applied from the contact electrode 150b to the n-type semiconductor layer 110. Here, the finger electrode 150a is formed to have a predetermined length on the n-type semiconductor layer 110, it is possible to improve the current diffusion effect. Here, the line width of the finger electrode 150a may have a range of 1 μm to 10 μm. In this case, when the line width of the finger electrode 150a is less than 1 μm, there is no effect of diffusing current due to the resistance characteristic of the material constituting the finger electrode 150a. On the other hand, when the line width of the finger electrode 150a exceeds 10 μm, the area of the finger electrode 150a is increased, so that the light emitting area is relatively reduced, and thus the luminous efficiency may be reduced.

As the contact electrode 150b of the n-type electrode 150 is disposed on the first region 100a, that is, the light emitting region, the n-type electrode 150 is connected to the outside through wire bonding without reducing the light emitting area. Can be electrically connected. However, the light formed from the active layer 120 by the contact electrode 150b on the first region 100a may not be transmitted or leaked upward. In this case, the reflective electrode 170 is disposed under the contact electrode 150b to reflect the light L formed in the active layer 120 to the substrate 100 and to reflect the light to the substrate 100. L may be re-reflected through the substrate 100 to be emitted upward. That is, the reflective electrode 170 may prevent the light emission efficiency of the contact electrode 150b from being disposed on the first region 100a, that is, the light emitting region.

Here, examples of the material for forming the reflective electrode 170 may be Al, Ag, Rh, Cr, Au, W, Ti, Pt and at least two or more of these alloys.

In addition, the reflective electrode 170 may be formed to be the same as or smaller than the area of the contact electrode 150b. That is, the reflective electrode 170 may be formed so as not to be exposed from the contact electrode 150b. This is because the area of the light emitting surface can be rather reduced by the reflective electrode 170.

The p-type electrode 160 may be disposed on the p-type semiconductor layer 130 or the transparent electrode 180 through the second opening 142 to be electrically connected to the p-type semiconductor layer 130. have. Here, the p-type electrode 160 is a p-type finger electrode which is electrically connected to the p-type contact electrode 150b for wire bonding with the outside and the p-type contact electrode to diffuse current to the p-type semiconductor layer. Can be distinguished.

In addition, a lower surface of the substrate 100 may further include a reflective member (not shown in the drawing) for more effectively reflecting light reflected from the reflective electrode 170. Here, the reflective member serves to reflect not only the light reflected by the reflective electrode 170 but also the light leaking to the upper portion, thereby improving the luminous efficiency of the light emitting diode device.

Accordingly, in the light emitting diode device according to the embodiment of the present invention, the contact electrode is disposed on the light emitting region and the reflecting electrode is provided under the contact electrode, thereby minimizing the reduction of the light emitting area while securing the wire bonding area. The reflective electrode may emit light formed in the active layer corresponding to the lower portion of the contact electrode to the outside, thereby improving light emission efficiency.

3 to 7 are cross-sectional views illustrating a method of manufacturing a light emitting diode device according to a second embodiment of the present invention.

Referring to FIG. 3, in order to manufacture a light emitting diode device, a substrate 100 is first provided. The substrate 100 may be divided into a first region 100a and a second region 100b. In addition, examples of the material of the substrate 100 may include a sapphire substrate, a silicon carbonate (SiC) substrate, a nitride substrate, and the like.

The n-type semiconductor layer 110, the active layer 120, and the p-type semiconductor layer 130 are sequentially formed on the substrate 100, that is, on the first and second regions 100b. The n-type semiconductor layer 110, the active layer 120, and the p-type semiconductor layer 130 may be formed through metal organic chemical vapor deposition, liquid phase epitaxial, molecular beam epitaxial, hybrid vapor deposition, and hydrogen liquid phase growth. In some embodiments, the method of manufacturing the p-type semiconductor layer 130, the active layer 120, and the n-type semiconductor layer 110 is not limited thereto.

In addition, a buffer layer (not shown) such as AlN / GaN may be further formed between the n-type semiconductor layer 110 and the substrate 100 to improve lattice mismatch.

Referring to FIG. 4, portions of the active layer 120 and the p-type semiconductor layer 130 may be etched to expose the n-type semiconductor layer 110 corresponding to the second region 100b.

Thereafter, a transparent electrode 180 may be further formed on the p-type semiconductor layer 130 to improve light transmittance and current diffusion effects. The transparent electrode 180 may be formed through a vacuum deposition method.

Referring to FIG. 5, an insulating layer 140 is formed on the substrate 100 including the transparent electrode 180. The insulating layer 140 has a first opening 141 exposing a portion of the n-type semiconductor layer 110 and a second opening 142 exposing a portion of the p-type semiconductor layer 130. have.

In order to form the insulating layer 140, a thin film is first formed on the substrate 100 including the transparent electrode 180. Subsequently, an insulating layer 140 having the first and second openings 141 and 142 may be formed through an etching process including an exposure and development process on the thin film. Here, the thin film may be formed of a silicon nitride film, a silicon oxide film, or the like.

Referring to FIG. 6, the reflective electrode 170 is formed on the insulating layer 140 of the first region 100a. The reflective electrode 170 may be formed by forming a reflective film through vacuum deposition and then etching the reflective film. The reflective electrode 170 may be disposed at a position corresponding to the contact electrode 150b formed in a subsequent process. In addition, examples of the material for forming the reflective film may be Al, Ag, Rh, Cr, Au, W, Ti, Pt and at least two or more of these alloys.

Referring to FIG. 7, after forming the reflective electrode 170, an n-type electrode 150 and a p-type electrode 160 are formed.

In order to form the n-type electrode 150 and the p-type electrode 160, first, a conductive film is formed on the substrate 100 including the reflective electrode 170. Thereafter, the n-type electrode 150 and the p-type electrode 160 may be formed by etching the conductive layer. The p-type electrode 160 may be disposed on the transparent electrode 180 exposed by the second opening 142 and electrically connected to the p-type semiconductor layer 130. In addition, the n-type electrode 150 may be divided into a finger electrode 150a and a contact electrode 150b. The finger electrode 150a may be disposed on the n-type semiconductor layer 120 exposed by the first opening 141. In addition, the contact electrode 150b may be electrically connected to the finger electrode 150a and disposed on the reflective electrode 170. Here, a part of the n-type electrode 150, that is, the contact electrode 150b is for wire bonding with the outside and may be disposed on the first area, that is, the light emitting area.

Therefore, in the embodiment of the present invention, a portion of the n-type electrode, that is, a contact electrode for wire bonding is formed on the light emitting region and a reflective electrode is formed below the contact electrode, thereby improving the light emitting area of the light emitting diode device. And the luminous efficiency could be improved.

In addition, the n-type electrode and the p-type electrode has been described as being prepared by etching one conductive film, but is not limited thereto. That is, after forming at least one of the n-type electrode and the p-type electrode, the other electrode may be formed. In this case, the n-type electrode and the p-type electrode may be made of different materials.

1 is a plan view of a light emitting diode device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

3 to 7 are cross-sectional views illustrating a method of manufacturing a light emitting diode device according to a second embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100 substrate 110 n-type semiconductor layer

120: active layer 130: p-type semiconductor layer

140: insulating layer 150: n-type electrode

150a: finger electrode 150b: contact electrode

160: p-type electrode 170: reflective electrode

180: transparent electrode

Claims (10)

A substrate comprising a first region and a second region; An n-type semiconductor layer disposed on the first and second regions; An active layer disposed on the n-type semiconductor layer corresponding to the first region; A p-type semiconductor layer disposed on the active layer; An insulating layer disposed on the substrate including the p-type semiconductor layer, the insulating layer having a first opening exposing a portion of the n-type semiconductor layer and a second opening exposing a portion of the p-type semiconductor layer; An n-type electrode including a finger electrode disposed on the n-type semiconductor layer exposed by the first opening, and a contact electrode electrically connected to the finger electrode and disposed on the insulating layer of the first region; A reflective electrode interposed between the insulating layer and the contact electrode; And A p-type electrode electrically connected to the p-type semiconductor layer through the second opening; Light emitting diode device comprising a. The method of claim 1, The reflective electrode is formed of at least any one selected from the group consisting of Al, Ag, Rh, Cr, Au, W, Ti, Pt and at least two of these alloys. The method of claim 1, The line width of the finger electrode is a light emitting diode device having a range of 1㎛ 10㎛. The method of claim 1, And the finger electrode and the contact electrode are integrally formed. The method of claim 1, The light emitting diode device further comprising a transparent electrode disposed on the p-type semiconductor layer. The method of claim 1, The reflective electrode has a light emitting diode device having an area equal to or smaller than the contact electrode. The method of claim 1, The insulating layer is formed to cover the side of the active layer and the p-type semiconductor layer. Providing a substrate comprising a first region and a second region; Sequentially forming an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the first and second regions; Removing a portion of the p-type semiconductor layer and the active layer to expose the n-type semiconductor layer on the second region; Forming an insulating layer having a first opening exposing a portion of the n-type semiconductor layer and a second opening exposing a portion of the p-type semiconductor layer on the substrate including the p-type semiconductor layer; Forming a reflective electrode on the insulating layer of the first region; And An n-type electrode including a finger electrode disposed on the n-type semiconductor layer exposed by the first opening, and a contact electrode electrically connected to the finger electrode and disposed on the reflective electrode and exposed by the second opening. Forming a p-type electrode disposed on the p-type semiconductor layer; Method of manufacturing a light emitting diode device comprising a. The method of claim 8, A method of manufacturing a light emitting diode device, further comprising forming a transparent electrode disposed on the p-type semiconductor layer. The method of claim 8, The reflective electrode is formed of at least one selected from the group consisting of Al, Ag, Rh, Cr, Au, W, Ti, Pt and at least two alloys thereof.
KR1020090006471A 2009-01-28 2009-01-28 Light emitting diode device and method fabricating the same KR20100087466A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101220130B1 (en) * 2011-03-30 2013-01-11 산켄덴키 가부시키가이샤 Light emitting element
KR20140032794A (en) * 2012-09-07 2014-03-17 엘지디스플레이 주식회사 Light emitting device and method of fabricating the same
KR20190094016A (en) * 2018-02-02 2019-08-12 엘지전자 주식회사 Car lamp using semiconductor light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101220130B1 (en) * 2011-03-30 2013-01-11 산켄덴키 가부시키가이샤 Light emitting element
KR20140032794A (en) * 2012-09-07 2014-03-17 엘지디스플레이 주식회사 Light emitting device and method of fabricating the same
KR20190094016A (en) * 2018-02-02 2019-08-12 엘지전자 주식회사 Car lamp using semiconductor light emitting device

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