TWI456682B - 半導體擴散機台 - Google Patents

半導體擴散機台 Download PDF

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Publication number
TWI456682B
TWI456682B TW101134506A TW101134506A TWI456682B TW I456682 B TWI456682 B TW I456682B TW 101134506 A TW101134506 A TW 101134506A TW 101134506 A TW101134506 A TW 101134506A TW I456682 B TWI456682 B TW I456682B
Authority
TW
Taiwan
Prior art keywords
semiconductor diffusion
gas conduit
diffusion machine
opening
enlarged portion
Prior art date
Application number
TW101134506A
Other languages
English (en)
Other versions
TW201413849A (zh
Inventor
Chinchia Hsu
Tzuwei Chiu
Chienchung Lee
Original Assignee
Motech Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motech Ind Inc filed Critical Motech Ind Inc
Priority to TW101134506A priority Critical patent/TWI456682B/zh
Publication of TW201413849A publication Critical patent/TW201413849A/zh
Application granted granted Critical
Publication of TWI456682B publication Critical patent/TWI456682B/zh

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  • Furnace Details (AREA)

Claims (9)

  1. 一種半導體擴散機台,包含:一爐管,包含依序相接之一頸部、一擴大部與一主體,其中該擴大部之截面積小於該主體但大於該頸部;以及一氣體導管,由該頸部至少延伸至該擴大部中,其中該氣體導管設有一開口,且該氣體導管之一延伸方向與該開口之一中心線延伸方向之間所夾之一角度從30度至60度。
  2. 如請求項1所述之半導體擴散機台,其中該氣體導管之該開口位於該擴大部內。
  3. 如請求項1所述之半導體擴散機台,其中該氣體導管之該開口位於該主體內。
  4. 如請求項1所述之半導體擴散機台,更包含一排氣管,由該擴大部延伸至該主體內,其中該氣體導管位於該排氣管之上方。
  5. 如請求項4所述之半導體擴散機台,其中該中心線延伸方向為遠離該排氣管的方向。
  6. 如請求項1所述之半導體擴散機台,其中該中心線延伸方向朝該氣體導管之正上方、或上方但非正上方的方 向。
  7. 如請求項1所述之半導體擴散機台,其中該角度為該延伸方向上方之一仰角。
  8. 如請求項1所述之半導體擴散機台,其中該開口設於該氣體導管之一弧狀前端上。
  9. 如請求項1所述之半導體擴散機台,其中該角度為45度。
TW101134506A 2012-09-20 2012-09-20 半導體擴散機台 TWI456682B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101134506A TWI456682B (zh) 2012-09-20 2012-09-20 半導體擴散機台

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101134506A TWI456682B (zh) 2012-09-20 2012-09-20 半導體擴散機台

Publications (2)

Publication Number Publication Date
TW201413849A TW201413849A (zh) 2014-04-01
TWI456682B true TWI456682B (zh) 2014-10-11

Family

ID=52112305

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101134506A TWI456682B (zh) 2012-09-20 2012-09-20 半導體擴散機台

Country Status (1)

Country Link
TW (1) TWI456682B (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW343273B (en) * 1997-05-26 1998-10-21 Taiwan Semiconductor Mfg Co Ltd Furnace type reactor and method of using the same
US20080298933A1 (en) * 2007-05-29 2008-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate carrier, port apparatus and facility interface and apparatus including same
TW201105579A (en) * 2009-05-22 2011-02-16 Asahi Glass Co Ltd Silicon manufacturing apparatus and silicon manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW343273B (en) * 1997-05-26 1998-10-21 Taiwan Semiconductor Mfg Co Ltd Furnace type reactor and method of using the same
US20080298933A1 (en) * 2007-05-29 2008-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate carrier, port apparatus and facility interface and apparatus including same
TW201105579A (en) * 2009-05-22 2011-02-16 Asahi Glass Co Ltd Silicon manufacturing apparatus and silicon manufacturing method

Also Published As

Publication number Publication date
TW201413849A (zh) 2014-04-01

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