TWI456682B - 半導體擴散機台 - Google Patents
半導體擴散機台 Download PDFInfo
- Publication number
- TWI456682B TWI456682B TW101134506A TW101134506A TWI456682B TW I456682 B TWI456682 B TW I456682B TW 101134506 A TW101134506 A TW 101134506A TW 101134506 A TW101134506 A TW 101134506A TW I456682 B TWI456682 B TW I456682B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor diffusion
- gas conduit
- diffusion machine
- opening
- enlarged portion
- Prior art date
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- Furnace Details (AREA)
Claims (9)
- 一種半導體擴散機台,包含:一爐管,包含依序相接之一頸部、一擴大部與一主體,其中該擴大部之截面積小於該主體但大於該頸部;以及一氣體導管,由該頸部至少延伸至該擴大部中,其中該氣體導管設有一開口,且該氣體導管之一延伸方向與該開口之一中心線延伸方向之間所夾之一角度從30度至60度。
- 如請求項1所述之半導體擴散機台,其中該氣體導管之該開口位於該擴大部內。
- 如請求項1所述之半導體擴散機台,其中該氣體導管之該開口位於該主體內。
- 如請求項1所述之半導體擴散機台,更包含一排氣管,由該擴大部延伸至該主體內,其中該氣體導管位於該排氣管之上方。
- 如請求項4所述之半導體擴散機台,其中該中心線延伸方向為遠離該排氣管的方向。
- 如請求項1所述之半導體擴散機台,其中該中心線延伸方向朝該氣體導管之正上方、或上方但非正上方的方 向。
- 如請求項1所述之半導體擴散機台,其中該角度為該延伸方向上方之一仰角。
- 如請求項1所述之半導體擴散機台,其中該開口設於該氣體導管之一弧狀前端上。
- 如請求項1所述之半導體擴散機台,其中該角度為45度。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101134506A TWI456682B (zh) | 2012-09-20 | 2012-09-20 | 半導體擴散機台 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101134506A TWI456682B (zh) | 2012-09-20 | 2012-09-20 | 半導體擴散機台 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201413849A TW201413849A (zh) | 2014-04-01 |
TWI456682B true TWI456682B (zh) | 2014-10-11 |
Family
ID=52112305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101134506A TWI456682B (zh) | 2012-09-20 | 2012-09-20 | 半導體擴散機台 |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI456682B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW343273B (en) * | 1997-05-26 | 1998-10-21 | Taiwan Semiconductor Mfg Co Ltd | Furnace type reactor and method of using the same |
US20080298933A1 (en) * | 2007-05-29 | 2008-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate carrier, port apparatus and facility interface and apparatus including same |
TW201105579A (en) * | 2009-05-22 | 2011-02-16 | Asahi Glass Co Ltd | Silicon manufacturing apparatus and silicon manufacturing method |
-
2012
- 2012-09-20 TW TW101134506A patent/TWI456682B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW343273B (en) * | 1997-05-26 | 1998-10-21 | Taiwan Semiconductor Mfg Co Ltd | Furnace type reactor and method of using the same |
US20080298933A1 (en) * | 2007-05-29 | 2008-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate carrier, port apparatus and facility interface and apparatus including same |
TW201105579A (en) * | 2009-05-22 | 2011-02-16 | Asahi Glass Co Ltd | Silicon manufacturing apparatus and silicon manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
TW201413849A (zh) | 2014-04-01 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |