TWI456677B - 量測系統、方法及微影裝置 - Google Patents

量測系統、方法及微影裝置 Download PDF

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Publication number
TWI456677B
TWI456677B TW100119440A TW100119440A TWI456677B TW I456677 B TWI456677 B TW I456677B TW 100119440 A TW100119440 A TW 100119440A TW 100119440 A TW100119440 A TW 100119440A TW I456677 B TWI456677 B TW I456677B
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TW100119440A
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TW201232687A (en
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Henrikus Herman Marie Cox
Willem Herman Gertruda Anna Koenen
Thomas Augustus Mattaar
Martinus Theodorus Jacobus Pieterse
Rob Antonius Andries Verkooijen
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Asml Netherlands Bv
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Claims (15)

  1. 一種經組態以導出一物件之一位置量的量測系統，該位置量包含位置、速度及加速度中之至少一者，該量測系統包含：一位置量感測器，該位置量感測器經組態以提供一位置量量測信號；一位置量計算器，該位置量計算器經組態以自該位置量量測信號判定該物件之一位置量，其中該位置量計算器包含一扭力估計器(torsion estimator)，該扭力估計器經組態以估計該物件之一扭力，該位置量計算器經組態以自該經估計扭力校正該物件之該經判定位置量。
  2. 如請求項1之量測系統，其中該位置量計算器包含一頻帶濾波器，該扭力估計器係提供於該位置量計算器之一平行路徑中。
  3. 如請求項2之量測系統，其中該頻帶濾波器包含一帶阻(band stop)濾波器，該位置量計算器經組態以在該帶阻濾波器之前自該經判定位置量減去藉由該扭力估計器提供之一扭力校正位置量，且在該帶阻濾波器之後加上藉由該扭力估計器提供之該扭力校正位置量。
  4. 如請求項2之量測系統，其中該頻帶濾波器包含一帶通(band pass)濾波器，該帶通濾波器及該扭力估計器係提供於該位置量計算器之一平行路徑中。
  5. 如請求項3或4之量測系統，其中該扭力估計器包含一加 權因子矩陣估計器，該加權因子矩陣估計器經組態以自一所要機械學轉移函數與一經量測機械學轉移函數之一商數判定一加權因子矩陣，該扭力估計器經組態以自該加權因子矩陣判定一扭力估計器矩陣。
  6. 如請求項5之量測系統，其中該扭力估計器經組態以判定在該扭力之一頻帶中該加權因子矩陣之一實數部分的一均值(mean)，該扭力估計器經組態以自該加權因子矩陣之該均值實數部分判定該扭力估計器矩陣。
  7. 如請求項5之量測系統，其中該扭力估計器經組態以自一單元矩陣(unity matrix)與該加權因子矩陣之一相減判定該扭力估計器矩陣。
  8. 如請求項1至4中任一項之量測系統，其中該等位置量感測器經組態以量測該物件之一垂直位置量。
  9. 如請求項1至4中任一項之量測系統，其中該量測系統包含至少4個位置量感測器。
  10. 一種微影裝置，其包含：一照明系統，該照明系統經組態以調節一輻射光束；一支撐件，該支撐件經建構以支撐一圖案化元件，該圖案化元件能夠在該輻射光束之橫截面中向該輻射光束賦予一圖案以形成一經圖案化輻射光束；一基板台，該基板台經建構以固持一基板；一投影系統，該投影系統經組態以將該經圖案化輻射光束投影至該基板之一目標部分上；及一如請求項1至9中任一項之量測系統，該量測系統經 組態以量測該支撐件、該基板台及該投影系統之一投影透鏡器件中之一者之一位置量。
  11. 一種用以導出一物件之一位置量的位置量量測方法，該位置量包含位置、速度及加速度中之至少一者，該量測方法包含：藉由一位置量感測器來提供一位置量量測信號；藉由一扭力估計器來估計該物件之一扭力；藉由一位置量計算器而自該位置量量測信號判定該物件之一位置量；及自該經估計扭力校正該物件之該經判定位置量。
  12. 如請求項11之位置量量測方法，其中將一頻帶濾波器應用於該位置量計算器之一平行路徑中。
  13. 如請求項12之位置量量測方法，其中該頻帶濾波器包含一帶阻濾波器，該方法包含在該帶阻濾波器之前減去藉由該扭力估計器提供之一扭力校正位置量，且在該帶阻濾波器之後加上藉由該扭力估計器提供之該扭力校正位置量。
  14. 如請求項12之位置量量測方法，其中該頻帶濾波器包含一帶通濾波器，該帶通濾波器及該扭力估計器係提供於該位置量計算器之一平行路徑中。
  15. 如請求項11至14中任一項之位置量量測方法，其中自一所要機械學轉移函數與一經量測機械學轉移函數之一商數判定一加權因子矩陣，自在該扭力之一頻帶中該加權因子矩陣之一實數部分的一均值判定一扭力估計器矩 陣。
TW100119440A 2010-06-24 2011-06-02 量測系統、方法及微影裝置 TWI456677B (zh)

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TWI456677B true TWI456677B (zh) 2014-10-11

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US (1) US8681316B2 (zh)
JP (1) JP5323140B2 (zh)
KR (1) KR101346051B1 (zh)
CN (1) CN102298269B (zh)
NL (1) NL2006804A (zh)
TW (1) TWI456677B (zh)

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NL2008695A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Lithographic apparatus comprising substrate table.
DE102012210309A1 (de) 2012-06-19 2013-12-19 Dr. Johannes Heidenhain Gmbh Positionsmesseinrichtung
CN107783379B (zh) * 2016-08-30 2020-06-16 上海微电子装备（集团）股份有限公司 一种测量信息的补偿方法
CN108121166B (zh) * 2016-11-30 2020-01-24 上海微电子装备（集团）股份有限公司 一种主动吸振器及微动台
JP2021149000A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 露光方法、露光装置、及び半導体装置の製造方法

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Also Published As

Publication number Publication date
CN102298269A (zh) 2011-12-28
KR101346051B1 (ko) 2013-12-31
JP2012009858A (ja) 2012-01-12
CN102298269B (zh) 2014-07-09
JP5323140B2 (ja) 2013-10-23
US20110317142A1 (en) 2011-12-29
US8681316B2 (en) 2014-03-25
TW201232687A (en) 2012-08-01
KR20110140104A (ko) 2011-12-30
NL2006804A (en) 2011-12-28

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